CN108418641B - Multi-channel light receiving assembly of integrated optical amplifier - Google Patents
Multi-channel light receiving assembly of integrated optical amplifier Download PDFInfo
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- CN108418641B CN108418641B CN201810253679.3A CN201810253679A CN108418641B CN 108418641 B CN108418641 B CN 108418641B CN 201810253679 A CN201810253679 A CN 201810253679A CN 108418641 B CN108418641 B CN 108418641B
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- 230000003287 optical effect Effects 0.000 title claims abstract description 427
- 239000004065 semiconductor Substances 0.000 claims abstract description 115
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
- H04B10/60—Receivers
- H04B10/66—Non-coherent receivers, e.g. using direct detection
- H04B10/67—Optical arrangements in the receiver
- H04B10/671—Optical arrangements in the receiver for controlling the input optical signal
- H04B10/672—Optical arrangements in the receiver for controlling the input optical signal for controlling the power of the input optical signal
- H04B10/673—Optical arrangements in the receiver for controlling the input optical signal for controlling the power of the input optical signal using an optical preamplifier
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
- H04B10/60—Receivers
- H04B10/66—Non-coherent receivers, e.g. using direct detection
- H04B10/69—Electrical arrangements in the receiver
- H04B10/691—Arrangements for optimizing the photodetector in the receiver
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
- H04B10/60—Receivers
- H04B10/66—Non-coherent receivers, e.g. using direct detection
- H04B10/69—Electrical arrangements in the receiver
- H04B10/693—Arrangements for optimizing the preamplifier in the receiver
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
- H04B10/60—Receivers
- H04B10/66—Non-coherent receivers, e.g. using direct detection
- H04B10/69—Electrical arrangements in the receiver
- H04B10/697—Arrangements for reducing noise and distortion
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- Engineering & Computer Science (AREA)
- Computer Networks & Wireless Communication (AREA)
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Abstract
The invention relates to a multichannel light receiving component of an integrated light amplifier in a device utilizing stimulated emission, which comprises a semiconductor light amplifying device, a light connecting device and a multichannel light receiving device, wherein a light signal sequentially enters the multichannel light receiving device through the semiconductor light amplifying device and the light connecting device, and the light connecting device comprises a spherical connecting end and a concave spherical connecting end, and the convex end of the spherical connecting end is matched with the concave end of the end face of the concave spherical connecting end. The invention has the following substantial effects: a multichannel light receiving module utilizing an SOA and an optical connecting device enabling outgoing light beams of the SOA to be parallelly and collimated to be incident on the multichannel light receiving device are designed, and feedback control of an SOA end monitoring module or an Odemux end monitoring module is utilized to enable amplified light signals to be within a detection threshold value, so that error rates of electric signal output results are reduced.
Description
Technical Field
The present invention relates to devices utilizing stimulated emission, and more particularly to a multi-channel light receiving assembly incorporating an optical amplifier.
Background
The semiconductor optical amplifier (semiconductor optical amplifier, abbreviated as SOA) has wide application in optical fiber communication systems, and can be used as a power amplifier at an optical transmitting end, a relay amplifier of a line, a pre-amplifier at an optical receiving end and an optical shunt compensation amplifier, and can also be used as a nonlinear device for optical signal processing modules such as an optical switch, a wavelength converter and the like.
The semiconductor optical amplifier is used as a pre-amplifier of the optical receiving end, and can optically amplify the signal light entering the optical receiving end to compensate the transmission loss of the signal light on a long-distance optical path. As proposed in patent CN200880131443.7, an optical amplification control apparatus, a semiconductor optical amplifier control method and an optical transmission device, wherein a receiving end portion of the optical transmission device is provided with a semiconductor optical amplification control apparatus in front of an optical receiver for optically amplifying signal light entering the optical receiver, and an optical filter is provided between the semiconductor optical amplification control apparatus and the optical receiver for filtering spontaneous emission noise of the semiconductor optical amplification control apparatus; in an optical fiber module proposed in CN200680044522.5, a semiconductor optical amplifier is used as a part of an internal receiving end of the semiconductor optical amplifier, and signal light entering the optical fiber module is optically amplified and then transmitted to other receiving devices in the optical fiber module.
Compared with other types of optical amplifying devices, such as erbium-doped fiber amplifiers and fiber Raman amplifiers, the semiconductor optical amplifier has the advantages of small volume, simple structure, low cost, no need of pumping source and easy integration with other optical devices and circuits, and therefore, the semiconductor optical amplifier has advantages in the integrated application of the receiving end of an optical communication system.
However, the application of the semiconductor optical amplifier in the receiving end of the optical communication system with a plurality of channels is reported in the two patents; the semiconductor optical amplifier has the problem of large noise in multi-channel amplification, and the corresponding denoising technology is also reported; in patent CN200880131443.7, the semiconductor optical amplifier and the optical receiver are connected by an optical fiber, and the minimum bending radius of the optical fiber limits the size of the optical receiving end, so that the design does not meet the requirement of a miniaturized optical communication device.
In order to reduce reflection feedback in the semiconductor optical amplifier, in the manufacturing process of the semiconductor optical amplifier chip, the stripe-shaped active region is usually deviated from the normal of the cleavage end surface by a certain angle θ, which causes that the transmission direction of the light beam emitted from the semiconductor amplifier also has a certain angle θ with respect to the normal of the cleavage end surface, i.e. the direction of the emitted light beam deviates from the central axis direction of the semiconductor optical amplifier, as shown in fig. 1. In multi-channel light receiving assembly applications, special connection structures or optics are required to enable parallel collimation of the outgoing light beam from the semiconductor light amplifier to be incident on the next optics of the light receiving assembly.
Disclosure of Invention
The invention aims to solve the following three problems: 1. amplifying an optical signal of an optical receiving end in a multichannel optical communication system by using an SOA; 2. an optical connection device is designed, so that an emergent light beam of an SOA can be parallel and collimated to be incident on a multi-channel optical receiving device; 3. the influence of an SOA on the multi-channel light receiving component is eliminated by adding a narrow-band filter; 4. the gain effect is controlled by regulating and controlling the bias current of the SOA in real time, so that the error rate of an electric signal output result is reduced.
The invention adopts the technical proposal for solving the problems that: the multi-channel light receiving assembly of the integrated optical amplifier comprises a semiconductor light amplifying device, a light connecting device and a multi-channel light receiving device, wherein an optical signal enters through an input end of the semiconductor light amplifying device, the semiconductor light amplifying device is connected with the multi-channel light receiving device through the light connecting device, the optical signal sequentially enters the multi-channel light receiving device through the semiconductor light amplifying device and the light connecting device and is converted into an electric signal through photoelectric conversion to be output from the multi-channel light receiving device, the light connecting device comprises a spherical connecting end and a concave spherical connecting end, the spherical connecting end is a cylindrical connecting end with one end face connected to an output end of the semiconductor light amplifying device, the other end face of the connecting end is provided with a bulge, the longitudinal section of the outer edge of the bulge is an arc with the radius of curvature R, and the cross section of the center of the bulge is a round hole with the diameter D; the concave spherical connecting end is a cylindrical connecting end with one end face connected to the input end of the multi-channel light receiving device and matched with the spherical connecting end, the other end face of the connecting end is provided with a groove, the outer edge side wall of the groove is an arc with a longitudinal section curvature radius R, and the bottom center cross section of the groove is a round hole with a diameter D; the spherical connecting end and the concave spherical connecting end are welded by laser. The optical signals sequentially enter the multi-channel optical receiving device through the semiconductor optical amplifying device and the optical connecting device, and are converted into electric signals through photoelectric conversion in the multi-channel optical receiving device to be output from the multi-channel optical receiving device, so that the optical signals at the optical receiving end in the multi-channel optical communication system are amplified by the SOA and the electric signals of all channels are obtained. The manufacturing process of the SOA chip can lead the strip-shaped active area to deviate from the normal line of the cleavage end surface by a certain angle theta, which causes the transmission direction of the light beam emitted from the SOA to also deviate from the normal line of the cleavage end surface by a certain angle theta, namely the direction of the emitted light beam deviates from the central axis direction of the emitted end surface of the SOA, and the emitted light beam of the SOA is parallel and collimated to be incident on the multi-channel light receiving device through the rotation of the spherical connecting end and the concave spherical connecting end.
Preferably, the semiconductor optical amplifying device comprises a plurality of optical paths, an optical beam splitter, a front optical isolator, a front coupling lens, a semiconductor optical amplifier, an SOA end monitoring module, a rear coupling lens and a rear optical isolator, wherein the optical paths comprise an optical path L1, an optical path L2 and an optical path L3, the optical path L1 is an optical signal input optical path, the optical signals entering the optical path L1 respectively enter the optical path L2 and the optical path L3 after passing through the optical beam splitter, the optical signals entering the optical path L2 sequentially pass through the front optical isolator, the front coupling lens, the semiconductor optical amplifier, the rear coupling lens and the rear optical isolator, the optical signals entering the optical path L3 enter the SOA end monitoring module, and the SOA end monitoring module is electrically connected with the semiconductor optical amplifier. The SOA is arranged between the front optical isolator and the rear optical isolator, and the two isolators jointly ensure unidirectional transmission of optical signals in the SOA. The optical signal enters the SOA through the front coupling lens and returns to the optical path through the back coupling lens.
Preferably, the SOA end monitoring module is configured to control the bias current of the semiconductor optical amplifier according to the intensity of the optical signal entering the optical path L3, and includes a photo detector, a microprocessor and a memory, where the photo detector and the memory are both electrically connected with the microprocessor, the microprocessor is electrically connected with the bias current control module of the semiconductor optical amplifier, the photo detector is configured to obtain the intensity of the optical signal in the optical path L3, and the microprocessor is configured to calculate the intensity of the optical signal in the optical path L2 and control the bias current of the semiconductor optical amplifier. The optical signal intensity in L2 is calculated according to the ratio of the optical signal intensity in L3 and the beam splitting of the optical beam splitter, and the bias current of the semiconductor optical amplifier is calculated according to the data stored in the memory.
Preferably, the optical beam splitter is an optical beam splitter with a splitting ratio of 90:10. The beam splitter with a larger beam splitting ratio is selected so that a stronger optical signal enters the optical path L2.
Preferably, the multi-channel optical receiving device comprises a plurality of optical paths, an optical demultiplexer, a narrow-band filter bank, a photoelectric detection module bank and an Odemux end monitoring module, wherein an optical signal enters the optical demultiplexer from a concave spherical connecting end through the optical paths, n optical branches are separated from the rear of the optical demultiplexer, the tail end of each optical branch is respectively connected with a corresponding photoelectric detection module through a corresponding narrow-band filter, the n photoelectric detection modules form the photoelectric detection module bank, the tail end of the photoelectric detection module bank is electrically connected with the Odemux end monitoring module, and the Odemux end monitoring module is electrically connected with the semiconductor optical amplifier.
Preferably, the narrow-band filter group is composed of n band-pass filters corresponding to the center wavelengths of the optical signals on the n optical branches, respectively.
Preferably, the photoelectric detection module is composed of a photoelectric detector and a pre-electric signal amplifier and is used for photoelectric conversion, electric signal amplification and the like.
Preferably, the Odemux end monitoring module is used for controlling the bias current of the semiconductor optical amplifier according to the electric signals output by the photoelectric detection module group, and comprises an electric signal detector, a microprocessor and a memory, wherein the electric signal detector and the memory are electrically connected with the microprocessor, the microprocessor is electrically connected with the bias current control module of the semiconductor optical amplifier, the electric signal detector is used for acquiring the voltage values output by the n photoelectric detection modules, and the microprocessor is used for controlling the bias current of the semiconductor optical amplifier according to the voltage values. The optical signal obtained by the photoelectric detector in the photoelectric detection module of the multichannel optical receiving device is within the detection threshold by the feedback action of the SOA end monitoring module or the Odemux end monitoring module, so that the error rate of the electric signal output result is reduced.
The invention has the following substantial effects: a multichannel light receiving module utilizing an SOA and an optical connecting device enabling outgoing light beams of the SOA to be parallelly and collimated to be incident on the multichannel light receiving device are designed, and feedback control of an SOA end monitoring module or an Odemux end monitoring module is utilized to enable amplified light signals to be within a detection threshold value, so that error rates of electric signal output results are reduced.
Drawings
Fig. 1 is a schematic structural diagram of a multi-channel optical receiving component of the integrated optical amplifier.
Fig. 2 is a schematic structural detail of the optical connection device, wherein fig. 2 (a) is an exploded schematic view of the optical connection device, fig. 2 (b) is a non-deflected state schematic view of the optical connection device, and fig. 2 (c) is a deflected state schematic view of the optical connection device.
Fig. 3 is a schematic connection diagram of the optical connection device, wherein fig. 3 (a) is a schematic connection diagram of the optical connection device in a non-deflected state, and fig. 3 (b) is a schematic connection diagram of the optical connection device in a deflected state.
In the figure: 100. the semiconductor optical amplifying device comprises a semiconductor optical amplifying device 101, an optical beam splitter 102, a front optical isolator 103, a front coupling lens 104, a semiconductor optical amplifier 105, an SOA end monitoring module 106, a rear coupling lens 107, a rear optical isolator 200, a multi-channel optical receiving device 201, an optical demultiplexer 202, a narrow-band filter bank 203, a photoelectric detection module bank 204, an Odemux end monitoring module 300, an optical connecting device 301, a spherical connecting end 302 and a concave spherical connecting end.
Detailed Description
The following description of the embodiments of the present invention will be made with reference to the accompanying drawings.
Fig. 1 is a schematic structural diagram of a multi-channel optical receiving module of the integrated optical amplifier, which comprises a semiconductor optical amplifying device 100, an optical connection device 300 and a multi-channel optical receiving device 200, wherein an optical signal enters through an input end of the semiconductor optical amplifying device 100, the semiconductor optical amplifying device 100 is connected with the multi-channel optical receiving device 200 through the optical connection device 300, and the optical signal sequentially enters the multi-channel optical receiving device 200 through the semiconductor optical amplifying device 100 and the optical connection device 300 and is converted into an electrical signal through photoelectric conversion and is output from the multi-channel optical receiving device 200. The semiconductor optical amplifying device 100 comprises a plurality of optical paths, an optical beam splitter 101, a pre-optical isolator 102, a pre-coupling lens 103, a semiconductor optical amplifier 104, an SOA end monitoring module 105, a post-coupling lens 106 and a post-optical isolator 107, wherein the optical paths comprise an optical path L1, an optical path L2 and an optical path L3, the optical path L1 is an optical signal input optical path, the optical signal entering the optical path L1 respectively enters the optical path L2 and the optical path L3 after passing through the optical beam splitter 101, the optical signal entering the optical path L2 sequentially passes through the pre-optical isolator 102, the pre-coupling lens 103, the semiconductor optical amplifier 104, the post-coupling lens 106 and the post-optical isolator 107, the optical signal entering the optical path L3 enters the SOA end monitoring module 105, and the SOA end monitoring module 105 is electrically connected with the semiconductor optical amplifier 104. The multi-channel optical receiving device 200 comprises a plurality of optical paths, an optical demultiplexer 201, a narrow-band filter bank 202, a photoelectric detection module bank 203 and an Odemux end monitoring module 204, wherein an optical signal enters the optical demultiplexer 201 from a concave spherical connecting end 302 through the optical paths, n optical branches are separated from the rear of the optical multiplexer, the tail end of each optical branch is respectively connected with a corresponding photoelectric detection module through a corresponding narrow-band filter, the n photoelectric detection modules form the photoelectric detection module bank 203, the tail end of the photoelectric detection module bank 203 is electrically connected with the Odemux end monitoring module 204, and the Odemux end monitoring module 204 is electrically connected with the semiconductor optical amplifier 104.
Fig. 2 is a schematic view of the optical connection device in detail, fig. 2 (a) is an exploded schematic view of the optical connection device, fig. 2 (b) is a schematic view of the optical connection device in a non-deflected state, and fig. 2 (c) is a schematic view of the optical connection device in a deflected state; fig. 3 is a schematic connection diagram of the optical connection device, wherein fig. 3 (a) is a schematic connection diagram of the optical connection device in a non-deflected state, and fig. 3 (b) is a schematic connection diagram of the optical connection device in a deflected state. The optical connection device comprises a spherical connection end 301 and a concave spherical connection end 302; the spherical connecting end 301 is a cylindrical connecting end with one end surface connected to the output end of the semiconductor optical amplifying device 100, the other end surface of the connecting end is provided with a bulge, the longitudinal section of the outer edge of the bulge is an arc with the radius of curvature R, and the cross section of the center of the bulge is a round hole with the diameter D; the concave spherical connecting end 302 is a cylindrical connecting end with one end surface connected to the input end of the multi-channel light receiving device 200 and is matched with the spherical connecting end 301, the other end surface of the connecting end is provided with a groove, the outer edge side wall of the groove is an arc with a longitudinal section curvature radius R, and the bottom center cross section of the groove is a round hole with a diameter D; the spherical connecting end and the concave spherical connecting end are welded by laser. The opposite end surfaces of the spherical connecting end 301 and the concave spherical connecting end 302 of the optical connector device have the same spherical radius R, and the centers of the spherical connecting end 301 and the concave spherical connecting end 302 are provided with circular holes with the diameter D, so that the optical connector device 300 has a length which satisfies that light emitted from the semiconductor optical amplifier device 100 can pass smoothly when the central axis deflection angle θ of the optical connector device 300 is set. Fig. 2 (b) is a sectional view A-A corresponding to the spherical port connection structure in the dashed line frame in fig. 3 (a), when the central axes of the spherical connection end 301 and the concave spherical connection end 302 are offset by an angle θ in the vertical plane, the outgoing light beam of the SOA can be incident in parallel alignment on the multi-channel light receiving device 200, as shown in fig. 2 (c) and 3 (b).
The multi-channel optical receiving module of the integrated optical amplifier of the present invention has any number of channels above 2 channels, such as 2 channels, 4 channels, 32 channels, etc., corresponding to the optical demultiplexer 201 having a corresponding number of output ports, the narrow band filter bank 202 having a corresponding number of narrow band filters, and the photodetecting module bank 203 having a corresponding number of photodetecting modules. The present embodiment is described and illustrated taking a 4-channel light receiving element as an example. On the incident light path L1, the incident light is a mixed light beam of four wavelength (λ1, λ2, λ3, λ4) optical signals, and the mixed light beam is incident on the 4-channel light receiving element, and is first received by the semiconductor light amplifying device 100. The optical splitter 101 splits the incident light into two paths (L2 and L3) according to the size of the splitting ratio, and most of the optical signal energy enters the optical path L2 and then enters the optical amplifying link of the semiconductor optical amplifying device 100 at the rear side of the optical isolator; a small amount of optical signal energy enters the optical path L3 and then enters the feedback control link of the semiconductor optical amplifying device 100 after the SOA side monitoring module 105. The specific splitting ratio of the beam splitter 101 is set according to the specific situation, for example, the splitting ratio of the two light paths of L2 and L3 is 90:10. The optical signal of the optical path L2 enters the pre-optical isolator 102, and the pre-optical isolator 102 functions to block light reflected back from the optical path and the optical device behind it, so as to block the influence of the reflected light on the optical device located in front of the pre-optical isolator 102. The optical signal emitted from the pre-optical isolator 102 is guided to the semiconductor optical amplifier 104 by the pre-coupling lens 103. The semiconductor optical amplifier 104 optically amplifies the incident four-wavelength optical signals. The optically amplified mixed optical signal is output from the semiconductor optical amplifier 104 and is then directed by the post-coupling lens 106 to the post-optical isolator 107, through which the mixed optical signal passes and then into the ball-shaped connection 301 in the optical connector device. The effect of the post optical isolator 107 is to block light reflected back from its rear optical path and the optical device to block the effect of such reflected light on the optical device located in front of the post optical isolator 107. The pre-optical isolator 102 and the post-optical isolator 107 together ensure unidirectional transmission of the optical signal in the semiconductor optical amplifier 104. The optical signal of the optical path L3 enters the SOA-side monitoring module 105, and the SOA-side monitoring module 105 performs feedback control on the semiconductor optical amplifier 104 according to the intensity of the optical signal of the incident optical path L3, so that the semiconductor optical amplifier 104 has a constant light intensity output value.
The SOA end monitoring module 105 is configured to control the bias current of the semiconductor optical amplifier 104 according to the intensity of the optical signal entering the optical path L3, and includes a photo detector, a microprocessor and a memory, where the photo detector and the memory are both electrically connected to the microprocessor, the microprocessor is electrically connected to the bias current control module of the semiconductor optical amplifier 104, the photo detector is configured to obtain the intensity of the optical signal in the optical path L3, and the microprocessor is configured to calculate the intensity of the optical signal in the optical path L2 and control the bias current of the semiconductor optical amplifier 104. The optical signal intensity in L2 is calculated from the ratio of the optical signal intensity in L3 and the beam split of the optical beam splitter 101, and the magnitude of the bias current is calculated from the data stored in the memory and the bias current of the semiconductor optical amplifier 104 is controlled. Since the output result of the electrical signal of the photo-detection module set 203 needs to be lower than a bit error rate, each photo-detection module 203a/203b/203c/203d has a certain minimum detection limit Pomin and a certain maximum detection limit Pomax for the intensity of the incident optical signal, which determine the range of the intensity value of the mixed optical signal emitted from the semiconductor optical amplifying device 100, and set the range of the intensity value of the mixed optical signal corresponding to the intensity value of the mixed optical signal emitted from the semiconductor optical amplifier 104 as Pmin to Pmax. The SOA side monitoring module 105 stores the range value of Pmin to Pmax in advance in the memory thereof, and sets a certain value Pset within the range of Pmin to Pmax as the planned output light intensity of the semiconductor optical amplifier 104. The internal photodetector of the SOA end monitoring module 105 detects the intensity value of the mixed optical signal incident from the optical path L3, and the microprocessor of the SOA end monitoring module 105 calculates the intensity value of the mixed optical signal incident from the optical path L2 according to the split ratio of the optical beam splitter 101 and the intensity value of the mixed optical signal incident from the optical path L3, i.e. calculates the intensity value of the mixed optical signal incident into the semiconductor optical amplifier 104. The microprocessor of the SOA terminal monitoring module 105 then calculates the gain coefficient of the semiconductor optical amplifier 104 for the mixed optical signal and the bias current value of the corresponding semiconductor optical amplifier 104 according to the mixed optical signal intensity value of the incident semiconductor optical amplifier 104 and the preset planned output optical intensity Pset. The microprocessor of the SOA terminal monitoring module 105 adjusts the bias current applied to the semiconductor optical amplifier 104 to the corresponding value, so as to change the gain coefficient of the semiconductor optical amplifier 104 on the mixed optical signal to the calculated value, and make the output light intensity of the semiconductor optical amplifier 104 after amplifying the mixed optical signal be the planned output light intensity Pset. The SOA side monitoring module 105 implements control of the semiconductor optical amplifier 104 so that the latter has a constant light intensity output value.
The optically amplified mixed optical signal is output from the semiconductor optical amplifying device 100, enters the multi-channel optical receiving device 200 via the optical connecting device 300, and first enters the optical demultiplexer 201. The optical demultiplexer 201 separates the four optical signals into four different output ends according to different wavelengths. The optical demultiplexer 201 may be one of the types of optical demultiplexers 201 that can be miniaturized and integrated, such as a dielectric thin film type, a grating type, or a planar waveguide type.
The four optical signals separated from the optical demultiplexer 201 enter four narrow-band filters 202a/202b/202c/202d of the narrow-band filter bank 202, respectively. The semiconductor optical amplifier 104 superimposes light generated by its spontaneous emission on the signal light during the optical amplification to form spontaneous emission noise, which is the main noise of the semiconductor optical amplifier 104. The wavelengths of light generated by the spontaneous emission are random, and thus the signal light amplified by the semiconductor optical amplifier 104 has a wide spectral background, so that the signal-to-noise ratio of the signal light is lowered, which may seriously affect the detection result of the multi-channel optical receiving apparatus 200. The function of the narrow-band filter 202a/202b/202c/202d is to filter out the spontaneous emission noise carried by each path of signal light, so as to improve the signal-to-noise ratio of the signal light. The narrow-band filters 202a/202b/202c/202d have the same filtering bandwidth value (3 dB bandwidth) with the center wavelength λ1/λ2/λ3/λ4 corresponding to the four output ends of the optical demultiplexer 201, and the filtering bandwidth value at least meets the broad spectrum background capable of filtering the signal light of each center wavelength, so as to ensure the signal-to-noise ratio of the signal light of each wavelength.
The four paths of signal light filtered by the narrow-band filters 202a/202b/202c/202d respectively enter four photoelectric detection modules 203a/203b/203c/203d of the photoelectric detection module group 203. The photo detection module 203a/203b/203c/203d includes the same photo detector and pre-electric signal amplifier inside. The photoelectric detection modules 203a/203b/203c/203d perform photoelectric conversion, electric signal amplification, and the like on the incident signal light, respectively.
The amplification of four wavelength optical signals by the semiconductor optical amplifier 104 is a complex control process, and under the control of different bias currents, the semiconductor optical amplifier 104 has different gain curves, and each gain curve has different gain coefficients for the four wavelength optical signals. Because of the complex relationship between the gain factor of the semiconductor optical amplifier 104 and the bias current and the wavelength of the incident light, under the control of some bias currents, the total output light intensity of the mixed optical signal of the semiconductor optical amplifier 104 is the planned output light intensity Pset, but there is a great difference between the gain factors of the four wavelength optical signals, which easily causes the following two results: after the optical signal with the lowest gain coefficient in the four wavelength optical signals is amplified, the light intensity value of the optical signal with the lowest gain coefficient is smaller than the minimum detection limit Pomin of the corresponding photoelectric detection module in the multi-channel optical receiving device 200; after the optical signal with the highest gain coefficient of the four wavelength optical signals is amplified, the optical intensity value of the optical signal with the highest gain coefficient of the four wavelength optical signals is larger than the maximum detection limit Pomax of the corresponding photoelectric detection module in the multi-channel optical receiving device 200. Both of the above results increase the error rate of the electrical signal output result of the photoelectric detection module group 203.
In order to make the semiconductor optical amplifier 104 have relatively flat gain coefficients for the four-wavelength optical signals, an Odemux end monitoring module 204 may be added after the photodetection module 203a/203b/203c/203d to control the bias current of the semiconductor optical amplifier 104 to be at a proper value, so that the gain curve of the semiconductor optical amplifier 104 is relatively flat for the four-wavelength optical signals. The Odemux end monitoring module 204 is configured to control bias current of the semiconductor optical amplifier 104 according to the electrical signals output by the photoelectric detection module group 203, and includes an electrical signal detector, a microprocessor and a memory, where the electrical signal detector and the memory are both electrically connected to the microprocessor, the microprocessor is electrically connected to the bias current control module of the semiconductor optical amplifier 104, the electrical signal detector is configured to obtain voltage values output by n photoelectric detection modules, and the microprocessor is configured to control bias current of the semiconductor optical amplifier 104 according to the voltage values. The feedback action of the SOA end monitoring module 105 or the Odemux end monitoring module 204 enables the optical signal acquired by the photoelectric detector in the photoelectric detection module of the multi-channel optical receiving device 200 to be within the detection threshold, so that the error rate of the output result of the electrical signal is reduced. The Odemux end monitoring module 204 stores in advance the electric signal intensity output ranges Vomin-Vomax of the photoelectric detection modules 203a/203b/203c/203d in a memory thereof, wherein Vomin and Vomax correspond to the light intensity detection limits pouin and poux of the photoelectric detection modules 203a/203b/203c/203d respectively, and meanwhile, a certain value Vset in the range of Vomin-Vomax is set as the planned output electric signal intensity value of each photoelectric detection module, and the tolerance of Vset is set as Δv.
The microprocessor of the Odemux end monitoring module 204 monitors the intensity output results of four paths of electric signals of the photoelectric detection modules 203a/203b/203c/203d, the computing circuit compares the four paths of electric signal intensity output results with two ranges of Vomin-Vomax and Vset+/-DeltaV, and when the four paths of electric signal intensity output results fall within the range of Vset+/-DeltaV, the four paths of electric signal intensity output results are ideal output results, and the Odemux end monitoring module 204 is considered to control the semiconductor optical amplifier 104 to be ideal operation; when at least one of the four electrical signal intensity output results is higher than the Vset+DeltaV value and the four electrical signal intensity output results are all higher than Vomin, the microprocessor of the Odemux end monitoring module 204 reduces the bias current of the semiconductor optical amplifier 104 so as to reduce the gain of the semiconductor optical amplifier 104; when at least one of the four electrical signal intensity output results is lower than the Vset-DeltaV value and the four electrical signal intensity output results are all lower than Vomax, the microprocessor of the Odemux end monitoring module 204 increases the bias current of the semiconductor optical amplifier 104 so as to increase the gain of the semiconductor optical amplifier 104; when at least one of the four electrical signal intensity output results is lower than the Vomin value or higher than the Vomax value, the microprocessor of the Odemux end monitoring module 204 forcibly sets the bias current of the semiconductor optical amplifier 104 to an initial value.
The above-described embodiment is only a preferred embodiment of the present invention, and is not limited in any way, and other variations and modifications may be made without departing from the technical aspects set forth in the claims.
Claims (8)
1. The multi-channel optical receiving assembly of the integrated optical amplifier is characterized by comprising a semiconductor optical amplifying device, an optical connecting device and a multi-channel optical receiving device, wherein an optical signal enters through an input end of the semiconductor optical amplifying device, the semiconductor optical amplifying device is connected with the multi-channel optical receiving device through the optical connecting device, and the optical signal sequentially enters the multi-channel optical receiving device through the semiconductor optical amplifying device and the optical connecting device and is converted into an electric signal through photoelectric conversion and is output from the multi-channel optical receiving device;
the optical connecting device comprises a spherical connecting end and a concave spherical connecting end, wherein the spherical connecting end is a cylindrical connecting end with one end face connected with the output end of the semiconductor optical amplifying device, the other end face of the spherical connecting end is provided with a bulge, the longitudinal section of the outer edge of the bulge is an arc with the curvature radius R, and the cross section of the center of the bulge is a circular plane with the diameter D; the concave spherical connecting end is a cylindrical connecting end with one end face connected to the input end of the multi-channel light receiving device and matched with the spherical connecting end, the other end face of the concave spherical connecting end is provided with a groove, the outer edge side wall of the groove is an arc with the radius of curvature R of a longitudinal section, and the central cross section of the bottom of the groove is a circular plane with the diameter D; the spherical connecting end and the concave spherical connecting end are welded by laser;
the semiconductor optical amplification device comprises a main optical path of the semiconductor optical amplification device and an SOA end monitoring module, wherein the SOA end monitoring module is used for controlling the bias current of the semiconductor optical amplifier according to the intensity of an optical signal entering the optical path L3;
the multichannel light receiving device comprises a main light path of the multichannel light receiving device and an Odemux end monitoring module, wherein the Odemux end monitoring module is used for controlling bias current of the semiconductor light amplifier according to electric signals output by the photoelectric detection module group.
2. The multi-channel optical receiving module of an integrated optical amplifier according to claim 1, wherein the main optical path of the semiconductor optical amplifying device comprises a plurality of optical paths, an optical beam splitter, a front optical isolator, a front coupling lens, a semiconductor optical amplifier, a rear coupling lens and a rear optical isolator, the plurality of optical paths comprise an optical path L1, an optical path L2 and an optical path L3, the optical path L1 is an optical signal input optical path, the optical signal entering the optical path L1 subsequently passes through the optical beam splitter and then enters the optical path L2 and the optical path L3 respectively, the optical signal entering the optical path L2 sequentially passes through the front optical isolator, the front coupling lens, the semiconductor optical amplifier, the rear coupling lens and the rear optical isolator, the optical signal entering the optical path L3 enters the SOA end monitoring module, and the SOA end monitoring module is electrically connected with the semiconductor optical amplifier.
3. The integrated optical amplifier multi-channel optical receiving module according to claim 1, wherein the SOA side monitoring module comprises a photo detector, a microprocessor and a memory, the photo detector and the memory are electrically connected with the microprocessor, the microprocessor is electrically connected with the bias current control module of the semiconductor optical amplifier, the photo detector is used for obtaining the optical signal intensity in the optical path L3, and the microprocessor is used for calculating the optical signal intensity in the optical path L2 and controlling the bias current of the semiconductor optical amplifier.
4. The integrated optical amplifier multichannel light receiving assembly of claim 2, wherein the optical splitter is a 90:10 split ratio optical splitter.
5. The multi-channel optical receiving assembly of an integrated optical amplifier according to claim 1, wherein the main optical path of the multi-channel optical receiving device comprises a plurality of optical paths, an optical demultiplexer, a narrow-band filter bank and a photoelectric detection module bank, optical signals enter the optical demultiplexer from a concave spherical connecting end through the optical paths, n optical branches are separated from the rear of the optical demultiplexer, the tail end of each optical branch is respectively connected with a corresponding photoelectric detection module through a corresponding narrow-band filter, n photoelectric detection modules form the photoelectric detection module bank, the tail end of the photoelectric detection module bank is electrically connected with the Odemux end monitoring module, and the Odemux end monitoring module is electrically connected with the semiconductor optical amplifier.
6. The optical amplifier-integrated multi-channel optical receiver assembly of claim 5, wherein the narrow-band filter bank is composed of n band-pass filters corresponding to the center wavelengths of the optical signals on the n optical branches, respectively.
7. The integrated optical amplifier multi-channel optical receiver assembly of claim 5, wherein the photo-detector module is comprised of a photo-detector and a pre-electric signal amplifier for photo-electric conversion and current amplification, respectively.
8. The multi-channel optical receiving module of claim 1, wherein the Odemux-side monitoring module comprises an electrical signal detector, a microprocessor and a memory, the electrical signal detector and the memory are electrically connected with the microprocessor, the microprocessor is electrically connected with the bias current control module of the semiconductor optical amplifier, the electrical signal detector is used for obtaining voltage values output by the n photoelectric detection modules, and the microprocessor is used for controlling the bias current of the semiconductor optical amplifier according to the voltage values.
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| CN110880954A (en) * | 2019-11-29 | 2020-03-13 | 深圳市光为光通信科技有限公司 | Optical detector receiving assembly |
| CN114122906B (en) * | 2021-11-02 | 2023-03-10 | 深圳市欧深特信息技术有限公司 | Semiconductor optical amplifier drive protection circuit, control method thereof and optical module |
Citations (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06174971A (en) * | 1992-12-01 | 1994-06-24 | Citizen Watch Co Ltd | Optical connector |
| JPH09127360A (en) * | 1995-11-02 | 1997-05-16 | Omron Corp | Optical fiber connecting device, optical coupling method for optical fiber, and manufacture of optical fiber cable and optical element |
| EP1239262A2 (en) * | 2001-03-09 | 2002-09-11 | HILTI Aktiengesellschaft | Arrangement and method for producing a plurality of optical axes with a defined alignment with respect to each other |
| CN1719325A (en) * | 2004-07-07 | 2006-01-11 | 中国科学院半导体研究所 | A kind of gain blocked semiconductor optical amplifier and method for making |
| JP2006039276A (en) * | 2004-07-28 | 2006-02-09 | Kyocera Corp | Optical connector |
| CN101432648A (en) * | 2006-05-08 | 2009-05-13 | At&S奥地利科技及系统技术股份公司 | Printed circuit board element comprising an optoelectronic component and an optical waveguide |
| CN201909925U (en) * | 2010-12-20 | 2011-07-27 | 武汉华工正源光子技术有限公司 | Single-ended semiconductor optical amplifier |
| CN102445735A (en) * | 2010-09-30 | 2012-05-09 | 株式会社藤仓 | Optical connector, connector adapter, optical fiber line, and optical communication system |
| JP2012165127A (en) * | 2011-02-04 | 2012-08-30 | Sumitomo Electric Ind Ltd | Optical receiver module |
| CN102694599A (en) * | 2012-05-23 | 2012-09-26 | 上海交通大学 | Tunable light source for colorless ONU (Optical Network Unit) of WDM-PON (Wavelength Division Multiplexing Passive Optical Network) based on mixed Brillouin SOA (Semiconductor Optical Amplifier) laser |
| CN107662223A (en) * | 2016-07-29 | 2018-02-06 | 精工爱普生株式会社 | Optical connecting device, optical communication apparatus, shift detector and robot |
| CN208433974U (en) * | 2018-03-26 | 2019-01-25 | 杭州芯耘光电科技有限公司 | A kind of multi-channel optical receiving unit of integrated light amplifier |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4554633B2 (en) * | 2007-03-16 | 2010-09-29 | 富士通株式会社 | SOA array optical module |
| JP5529384B2 (en) * | 2007-09-28 | 2014-06-25 | テルモ株式会社 | Optical rotary adapter and optical tomographic imaging apparatus using the same |
| US8014686B2 (en) * | 2008-03-20 | 2011-09-06 | Infinera Corporation | Polarization demultiplexing optical receiver using polarization oversampling and electronic polarization tracking |
| WO2014125647A1 (en) * | 2013-02-18 | 2014-08-21 | 富士通オプティカルコンポーネンツ株式会社 | Photoreceptor device |
| JP6124731B2 (en) * | 2013-08-09 | 2017-05-10 | 三菱電機株式会社 | Wavelength monitor and optical module |
| JP6575303B2 (en) * | 2015-10-30 | 2019-09-18 | 富士通株式会社 | Optical transmission device, optical power monitor, and optical power monitoring method |
-
2018
- 2018-03-26 CN CN201810253679.3A patent/CN108418641B/en active Active
Patent Citations (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06174971A (en) * | 1992-12-01 | 1994-06-24 | Citizen Watch Co Ltd | Optical connector |
| JPH09127360A (en) * | 1995-11-02 | 1997-05-16 | Omron Corp | Optical fiber connecting device, optical coupling method for optical fiber, and manufacture of optical fiber cable and optical element |
| EP1239262A2 (en) * | 2001-03-09 | 2002-09-11 | HILTI Aktiengesellschaft | Arrangement and method for producing a plurality of optical axes with a defined alignment with respect to each other |
| CN1719325A (en) * | 2004-07-07 | 2006-01-11 | 中国科学院半导体研究所 | A kind of gain blocked semiconductor optical amplifier and method for making |
| JP2006039276A (en) * | 2004-07-28 | 2006-02-09 | Kyocera Corp | Optical connector |
| CN101432648A (en) * | 2006-05-08 | 2009-05-13 | At&S奥地利科技及系统技术股份公司 | Printed circuit board element comprising an optoelectronic component and an optical waveguide |
| CN102445735A (en) * | 2010-09-30 | 2012-05-09 | 株式会社藤仓 | Optical connector, connector adapter, optical fiber line, and optical communication system |
| CN201909925U (en) * | 2010-12-20 | 2011-07-27 | 武汉华工正源光子技术有限公司 | Single-ended semiconductor optical amplifier |
| JP2012165127A (en) * | 2011-02-04 | 2012-08-30 | Sumitomo Electric Ind Ltd | Optical receiver module |
| CN102694599A (en) * | 2012-05-23 | 2012-09-26 | 上海交通大学 | Tunable light source for colorless ONU (Optical Network Unit) of WDM-PON (Wavelength Division Multiplexing Passive Optical Network) based on mixed Brillouin SOA (Semiconductor Optical Amplifier) laser |
| CN107662223A (en) * | 2016-07-29 | 2018-02-06 | 精工爱普生株式会社 | Optical connecting device, optical communication apparatus, shift detector and robot |
| CN208433974U (en) * | 2018-03-26 | 2019-01-25 | 杭州芯耘光电科技有限公司 | A kind of multi-channel optical receiving unit of integrated light amplifier |
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|---|---|
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