CN108376648A - A kind of flexible metal substrate and its preparation method and application - Google Patents
A kind of flexible metal substrate and its preparation method and application Download PDFInfo
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- CN108376648A CN108376648A CN201810087594.2A CN201810087594A CN108376648A CN 108376648 A CN108376648 A CN 108376648A CN 201810087594 A CN201810087594 A CN 201810087594A CN 108376648 A CN108376648 A CN 108376648A
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- metal substrate
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- flexible metal
- film transistor
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- 239000000758 substrate Substances 0.000 title claims abstract description 133
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 110
- 239000002184 metal Substances 0.000 title claims abstract description 110
- 238000002360 preparation method Methods 0.000 title claims abstract description 16
- 239000010409 thin film Substances 0.000 claims abstract description 86
- 238000000034 method Methods 0.000 claims abstract description 71
- 239000010408 film Substances 0.000 claims abstract description 23
- 239000013078 crystal Substances 0.000 claims description 22
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 14
- 238000009413 insulation Methods 0.000 claims description 14
- 239000000463 material Substances 0.000 claims description 14
- 238000002161 passivation Methods 0.000 claims description 13
- 238000000151 deposition Methods 0.000 claims description 11
- 238000002207 thermal evaporation Methods 0.000 claims description 10
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 8
- 239000004642 Polyimide Substances 0.000 claims description 8
- 229920001721 polyimide Polymers 0.000 claims description 8
- 229920001343 polytetrafluoroethylene Polymers 0.000 claims description 8
- 239000004810 polytetrafluoroethylene Substances 0.000 claims description 8
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 6
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 6
- 238000010894 electron beam technology Methods 0.000 claims description 5
- 239000011521 glass Substances 0.000 claims description 5
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 claims description 5
- 239000000377 silicon dioxide Substances 0.000 claims description 5
- 238000004544 sputter deposition Methods 0.000 claims description 5
- 238000007740 vapor deposition Methods 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- 238000005229 chemical vapour deposition Methods 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 230000008021 deposition Effects 0.000 claims description 4
- 229910052742 iron Inorganic materials 0.000 claims description 4
- -1 polytetrafluoroethylene Polymers 0.000 claims description 4
- 229910001220 stainless steel Inorganic materials 0.000 claims description 4
- 239000010935 stainless steel Substances 0.000 claims description 4
- 239000010936 titanium Substances 0.000 claims description 4
- 229910002370 SrTiO3 Inorganic materials 0.000 claims description 3
- 239000005388 borosilicate glass Substances 0.000 claims description 3
- 229910052594 sapphire Inorganic materials 0.000 claims description 3
- 239000010980 sapphire Substances 0.000 claims description 3
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 3
- 229910010092 LiAlO2 Inorganic materials 0.000 claims description 2
- 229910012463 LiTaO3 Inorganic materials 0.000 claims description 2
- 229910026161 MgAl2O4 Inorganic materials 0.000 claims description 2
- 229910052804 chromium Inorganic materials 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 229910052741 iridium Inorganic materials 0.000 claims description 2
- 229910052745 lead Inorganic materials 0.000 claims description 2
- 239000000203 mixture Substances 0.000 claims description 2
- 229910052750 molybdenum Inorganic materials 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- 229910052763 palladium Inorganic materials 0.000 claims description 2
- 239000005365 phosphate glass Substances 0.000 claims description 2
- 229910052697 platinum Inorganic materials 0.000 claims description 2
- 229910052703 rhodium Inorganic materials 0.000 claims description 2
- 229910052707 ruthenium Inorganic materials 0.000 claims description 2
- 239000005368 silicate glass Substances 0.000 claims description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 2
- 229910052709 silver Inorganic materials 0.000 claims description 2
- 229910052596 spinel Inorganic materials 0.000 claims description 2
- 229910052715 tantalum Inorganic materials 0.000 claims description 2
- 229910052718 tin Inorganic materials 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- 229910052721 tungsten Inorganic materials 0.000 claims description 2
- 229910052720 vanadium Inorganic materials 0.000 claims description 2
- 229910052726 zirconium Inorganic materials 0.000 claims description 2
- 230000003139 buffering effect Effects 0.000 claims 1
- 239000002178 crystalline material Substances 0.000 claims 1
- 229910000449 hafnium oxide Inorganic materials 0.000 claims 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 claims 1
- 230000008018 melting Effects 0.000 claims 1
- 238000002844 melting Methods 0.000 claims 1
- 238000004062 sedimentation Methods 0.000 claims 1
- 239000000126 substance Substances 0.000 claims 1
- 239000004408 titanium dioxide Substances 0.000 claims 1
- 238000000137 annealing Methods 0.000 abstract description 11
- 239000000446 fuel Substances 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 82
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 24
- 238000001755 magnetron sputter deposition Methods 0.000 description 18
- 239000011787 zinc oxide Substances 0.000 description 12
- 238000000231 atomic layer deposition Methods 0.000 description 9
- 239000002253 acid Substances 0.000 description 6
- 238000001259 photo etching Methods 0.000 description 6
- 150000003839 salts Chemical class 0.000 description 6
- 229910052593 corundum Inorganic materials 0.000 description 5
- 229910001845 yogo sapphire Inorganic materials 0.000 description 5
- 229960001296 zinc oxide Drugs 0.000 description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 229910052681 coesite Inorganic materials 0.000 description 3
- 229910052906 cristobalite Inorganic materials 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(iv) oxide Chemical compound O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 3
- 229910010272 inorganic material Inorganic materials 0.000 description 3
- 239000011147 inorganic material Substances 0.000 description 3
- 229920000620 organic polymer Polymers 0.000 description 3
- 238000004088 simulation Methods 0.000 description 3
- 229910052682 stishovite Inorganic materials 0.000 description 3
- 230000003746 surface roughness Effects 0.000 description 3
- 229910052905 tridymite Inorganic materials 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 239000005350 fused silica glass Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 230000002269 spontaneous effect Effects 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- 229910001928 zirconium oxide Inorganic materials 0.000 description 2
- LLLVZDVNHNWSDS-UHFFFAOYSA-N 4-methylidene-3,5-dioxabicyclo[5.2.2]undeca-1(9),7,10-triene-2,6-dione Chemical compound C1(C2=CC=C(C(=O)OC(=C)O1)C=C2)=O LLLVZDVNHNWSDS-UHFFFAOYSA-N 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 206010037660 Pyrexia Diseases 0.000 description 1
- 208000037656 Respiratory Sounds Diseases 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- MCMNRKCIXSYSNV-UHFFFAOYSA-N ZrO2 Inorganic materials O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 239000012776 electronic material Substances 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 230000009477 glass transition Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- IUZNJVILEJRNNP-UHFFFAOYSA-N magnesium;oxozinc Chemical compound [Mg].[Zn]=O IUZNJVILEJRNNP-UHFFFAOYSA-N 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical group O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 239000011112 polyethylene naphthalate Substances 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000005118 spray pyrolysis Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 235000020681 well water Nutrition 0.000 description 1
- 239000002349 well water Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
- H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
- H01L21/461—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/4763—Deposition of non-insulating, e.g. conductive -, resistive -, layers on insulating layers; After-treatment of these layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3736—Metallic materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66969—Multistep manufacturing processes of devices having semiconductor bodies not comprising group 14 or group 13/15 materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
Abstract
The present invention provides a kind of flexible metal substrate and its preparation method and application for making flexible thin-film transistor or fexible film diode, the flexible metal substrate is attached on parent, when being observed under 10 × 10 μm of scanning range by atomic force microscope, the r.m.s. roughness of the flexible metal substrate<10nm.The present invention prepares flexible thin-film transistor or thin film diode using metal as substrate, efficiently solves the problems, such as that existing organic flexible substrate cannot bear high-temperature process.In conjunction with high-temperature thermal annealing technique, the electric property and stability of thin film transistor (TFT) and diode can greatly improve.The heat that the high heat conductance of metal substrate distributes when can also be by transistor and diode operation conducts in time, eliminates influence of the fuel factor to device, further improves its performance and stability.
Description
Technical field
The present invention relates to flexible electronic device field, especially a kind of flexible metal substrate and preparation method thereof and in film
Application in transistor and thin film diode.
Background technology
In recent years, flexible electronic material and device based on flexible substrate have received widespread attention, Flexible Displays, can
The correlative study in the fields such as wearable device, Internet of Things, medical treatment electronic equipment and defence equipment achieves development at full speed.It wants
Realize the practical application of Technology of Flexibility, thin film transistor (TFT) and thin film diode flexible are two indispensable critical electronic devices
Part.Flexible thin-film transistor is the important component of flexible electronic device, wherein thin as the Zinc oxide-base of representative using InGaZnO
Film transistor is in Flexible Displays market in occupation of increasingly consequence；On the other hand, Chinese patent
No.201710718914.5 discloses a kind of flexible field-effect diode, which can tolerate high pressure, have high commutating ratio,
The blank of flexible high pressure devices field is filled up.However, there are still many urgently to be resolved hurrily in commercialization process for the two at present
Problem, wherein performance degradation caused by dependence and device spontaneous heating with device performance to high-temperature process is the most key.
By taking zinc oxide as an example, preparation method mainly has solwution method and vacuum deposition method two major classes.Solwution method includes mainly
Sol-gal process and spray pyrolysis etc., it is thick that prepared zinc-oxide film needs high-temperature post-treatment (being usually above 300 DEG C)
Change and removal of impurity.The performance of zinc oxide thin-film transistor prepared by vacuum deposition method is very sensitive to oxygen content, growth window
It is very narrow, it is therefore desirable to which that thermal annealing regulates and controls the oxygen content in zinc oxide.Particularly, high annealing can significantly improve zinc oxide
The stability of based thin film transistors.However, current flexible substrate is based on organic polymer, such as polyimides (PI), poly- pair
Ethylene terephthalate (PET), polyethylene naphthalate (PEN).Their flexibilities are good, operability is strong, but right
The poor air-tightness of water and oxygen, the adhesion strength between inorganic material is small, affects the performance and stability of device.The most key
It is that their glass transition temperature is low, it is difficult to higher temperature is born, thus required high-temperature post-treatment process can not be carried out, it is difficult
To obtain excellent performance and good stability.
On the other hand, thin film transistor (TFT), diode will produce Joule heat and hot carrier's effect at work, in active layer
It nearby will produce a large amount of heat.General organic flexible substrate thermal conductivity very little, if the thermal conductivity of PI substrates is 0.12Wm-1·K-1, it is difficult in time heat caused by active layer when work is transferred out, so that the temperature near active layer
It dramatically increases, the performance of device is degenerated due to spontaneous heating.
It can effectively be solved the above problems using flexible metal as the substrate of device.Metal substrate can completely cut off well
Water and oxygen can bear high-temperature process.Its high heat conductance helps to realize rapid cooling, thus can improve flexible electronic device
The stability and service life of part.But the general surface of metal substrate for flexible electronic device is very coarse, root mean square
Roughness is at hundreds of nanometers or more.Pass through the metal foil also trace with rolling of roll forming.Chinese patent
No.200910194558.7 discloses a kind of precise polishing method at stainless steel lining bottom, and this method will using chemically mechanical polishing
The r.m.s. roughness at stainless steel lining bottom is down to 0.7nm.Chinese patent No.201110191555.5 discloses a kind of for flexibility
The substrate of display device and the method for preparing the substrate, this method inorganic material layer and organic material layer on metal substrate
To realize surface planarisation.However, precise polished prohibitively expensive for large-sized flexible electronic device.In addition, using
Organic polymer reduces surface roughness there is also cannot bear high-temperature process as flatness layer, and inorganic material is made
Larger thickness, substrate is needed to easy to produce crackle or stripping when being bent, the flexibility of device can be influenced for flatness layer.
Invention content
Therefore, it is an object of the invention to solve the above problems, provides a kind of for making flexible thin-film transistor and thin
The flexible metal substrate of film diode, the substrate have low surface roughness.
It is a further object to provide a kind of methods making flexible thin-film transistor and thin film diode, use
Low-cost simple process makes the low flexible metal substrate of surface roughness, makes thin film transistor (TFT) and thin over the substrate
Film diode can bear high-temperature process, reduce the influence of fuel factor, so as to produce high performance fexible film crystal
Pipe and thin film diode.
A further object of the present invention is to provide a kind of flexible thin-film transistor based on metal substrate.
It is also another object of the present invention to provide a kind of fexible film diode based on metal substrate.
According to the first aspect of the invention, it provides a kind of for making flexible thin-film transistor or thin film diode
Flexible metal substrate, the flexible metal substrate are attached on parent, which is characterized in that by atomic force microscope at 10 × 10 μm
Scanning range under when observing, the r.m.s. roughness of the flexible metal substrate<10nm.
In some embodiments of the present invention, the r.m.s. roughness of the flexible metal substrate is 0.5~9.9nm.
Preferably, the thickness of the flexible metal substrate is 5~125 μm.
According to flexible metal substrate provided by the invention, wherein the material of the flexible metal substrate can be Ag, Al,
Au, Co, Cr, Cu, Fe, Ir, Mo, Ni, Pb, Pd, Pt, Rh, Ru, Sn, Ta, Ti, V, W, Zr and one kind in stainless steel (SUS) or
It is a variety of, it is preferably one or more in Al, Cu, Fe and SUS.
According to flexible metal substrate provided by the invention, wherein the parent can be by glass material or inorganic crystal material
It is made, wherein the glass material may include silicate glass, borosilicate glass, phosphate glass, fused silica
It is one or more in glass and quartz glass；The inorganic crystal material may include sapphire, ZnO crystal, TiO2Crystal,
YSZ crystal, SiC crystal, SrTiO3Crystal, Si crystal, MgO crystal, LiTaO3Crystal, MgAl2O4Crystal, LiAlO2Crystal and
It is one or more in GaN crystal.Preferably, the thickness of the parent can be 10 μm to 1mm.
According to the second aspect of the invention, the preparation method of the flexible metal substrate is additionally provided, the preparation method packet
It includes：Deposited metal forms the flexible metal substrate on parent, it is preferable that the method for deposition be electron beam vapor deposition method,
Thermal evaporation deposition method, sputtering method, chemical vapour deposition technique or galvanoplastic.
According to preparation method provided by the invention, it is preferable that pass through electron beam vapor deposition method, thermal evaporation deposition method or change
It learns vapour deposition process and forms the flexible metal substrate on parent.
According to the third aspect of the invention we, a kind of flexible thin-film transistor, the flexible thin-film transistor packet are additionally provided
It includes：Flexible metal substrate, buffer protection layer, channel layer, gate insulation layer, gate electrode, source electrode, drain electrode and passivation layer, wherein
The flexible metal substrate is for flexible metal substrate provided by the invention or by flexible metal substrate made from the method for the present invention.
According to flexible thin-film transistor provided by the invention, wherein cover buffer protection in the flexible metal substrate
Layer, effect are that metal substrate and gate electrode, source electrode and drain electrode insulate.
According to the fourth aspect of the invention, a kind of fexible film diode, the fexible film diode packet are additionally provided
It includes：Flexible metal substrate, buffer protection layer, channel layer, insulating layer, first electrode, second electrode, connection electrode and passivation layer,
The wherein described flexible metal substrate is for flexible metal substrate provided by the invention or by flexible metal made from the method for the present invention
Substrate.
According to fexible film diode provided by the invention, wherein cover buffer protection in the flexible metal substrate
Layer, effect are that metal substrate and first electrode, second electrode and connection electrode insulate.
According to flexible thin-film transistor provided by the invention or fexible film diode, wherein the buffer protection layer can
Think inorganic insulating material or organic polymer insulating materials.For example, the material of the buffer protection layer can be aluminium oxide
(Al2O3), hafnium oxide (HfO2), silica (SiOx), silicon nitride (SiNx), titanium oxide (TiO2), yttrium oxide (Y2O3), polyamides it is sub-
It is one or more in amine and polytetrafluoroethylene (PTFE).In a kind of specific embodiment of the present invention, the material of the buffer protection layer
Material can be the mixture of polyimides and polytetrafluoroethylene (PTFE).Preferably, the thickness of the buffer protection layer can be for 100nm extremely
1μm。
According to the fifth aspect of the invention, a kind of flexible thin-film transistor or fexible film diode of making is additionally provided
Method the described method comprises the following steps：Deposited metal forms flexible metal substrate on parent；In the flexible metal substrate
Upper deposition buffer protection layer；Thin film transistor (TFT) or thin film diode are prepared on the buffer protection layer；By the metal substrate
And thin film transistor (TFT) thereon or thin film diode are removed from the parent, form the fexible film crystal based on metal substrate
Pipe or fexible film diode.
The present invention prepares flexible thin-film transistor or thin film diode using metal as substrate, efficiently solves existing
Organic flexible substrate the problem of cannot bearing high-temperature process.In conjunction with high-temperature thermal annealing technique, thin film transistor (TFT) and diode
Electric property and stability can greatly improve.The high heat conductance of metal substrate dissipates when can also be by transistor and diode operation
The heat of hair conducts in time, eliminates influence of the fuel factor to device, further improves its performance and stability.
Description of the drawings
Hereinafter, carry out the embodiment that the present invention will be described in detail in conjunction with attached drawing, wherein：
Fig. 1 is the flow chart that the present invention prepares thin film transistor (TFT) or thin film diode on the metallic substrate.
Fig. 2 is the simulation model schematic diagram and analog result figure of the embodiment of the present invention 1.
Fig. 3 is the schematic top plan view and diagrammatic cross-section of thin film transistor (TFT) prepared by embodiment 1.
Fig. 4 is the transfer characteristic curve before and after thin film transistor (TFT) prepared by embodiment 1 is annealed at 300 DEG C.
Fig. 5 is the schematic top plan view and diagrammatic cross-section of thin film transistor (TFT) prepared by embodiment 2.
Fig. 6 is the schematic top plan view and diagrammatic cross-section of thin film transistor (TFT) prepared by embodiment 3.
Fig. 7 is the schematic top plan view and diagrammatic cross-section of thin film transistor (TFT) prepared by embodiment 4.
Fig. 8 is the schematic top plan view and diagrammatic cross-section of thin film transistor (TFT) prepared by embodiment 5.
Fig. 9 is the schematic top plan view and diagrammatic cross-section of thin film transistor (TFT) prepared by embodiment 6.
Figure 10 is the schematic top plan view and diagrammatic cross-section of thin film diode prepared by embodiment 7.
Specific implementation mode
The present invention is further described in detail With reference to embodiment, the embodiment provided is only for explaining
The bright present invention, the range being not intended to be limiting of the invention.
Fig. 1 is a kind of exemplary implementation scheme according to the present invention, prepares thin film transistor (TFT) or film on the metallic substrate
The flow chart of diode.As shown in Figure 1, step 1：The depositing Cu metal substrate 102 on quartz glass parent 101；Step 2：
The Al of technique for atomic layer deposition (ALD) deposition 150nm thickness is used in Cu metal substrates 1022O3Buffer protection layer 103；Step
Three：In Al2O3Thin film transistor (TFT) 104 is made on buffer protection layer 103；Step 4：By Cu metal substrates 102, Al2O3Buffering is protected
Sheath 103 and thin film transistor (TFT) 104 thereon are detached from parent, obtain the thin film transistor (TFT) based on flexible metal substrate.
Fig. 2 is simulation model schematic diagram and the simulation of a kind of thin film transistor (TFT) of exemplary implementation scheme according to the present invention
Result figure.The fever of thin film transistor (TFT) is reduced to heat source Q=5 × 108W/m2, the lateral edges temperature of substrate is set as
Thermal convection current all occurs with air for 293.15K, all boundaries, and the initial temperature of air is also 293.15K.It compares under the same terms
Cu substrates and the distribution of Si substrate temperatures, obtain the maximum temperature for using Cu substrate film transistors for 323.56K, still general
Within the scope of device can work normally；And using Si substrates then for 382.12K, the temperature much larger than general device bears model
It encloses.
Embodiment 1
The present embodiment is prepared for a kind of device architecture of the thin film transistor (TFT) using metal substrate, and structure type is bottom gate
Overlapping type.
Fig. 3 is that the schematic top plan view figure of the thin film transistor (TFT) 200 manufactured in the present embodiment using metal substrate and section show
It is intended to.As shown in figure 3, thin film transistor (TFT) 200 includes Ni metal substrate 201, Al successively from top to bottom2O3Buffer protection layer 202,
Cr gate electrodes 203, HfO2Gate insulation layer 204, ZnO channel layers 205, indium tin oxygen (ITO) source electrode and drain electrode 206, SiO2Passivation
Layer 207.
The preparation method of the thin film transistor (TFT) is as follows：
Electron beam vapor deposition method is used to prepare the Ni metal substrate 201 of 5 μ m-thicks on a sapphire substrate, root mean square is thick
Rugosity is 0.5nm；The Al of 100nm thickness is prepared using ALD on the Ni metal substrate 201 of 5 μ m-thicks2O3Buffer protection layer 202；It adopts
The Cr gate electrodes 203 of 100nm thickness are prepared with magnetron sputtering technique；The HfO of 50nm thickness is prepared using ALD2Gate insulation layer 204；It adopts
The ZnO channel layers 205 of 50nm thickness are prepared with magnetron sputtering technique, then pass through photoetching and salt acid etch, and channel layer 205 is carried out
Graphical treatment；The ITO source electrode and drain electrodes 206 of 50nm thickness are prepared using magnetron sputtering technique；Using plasma enhances
Chemical vapour deposition technique (PECVD) prepares the SiO of 100nm thickness2Passivation layer 207.
Fig. 4 is the transfer characteristic curve before and after the thin film transistor (TFT) of metal substrate manufactured in the present embodiment is annealed at 300 DEG C
Figure.It wherein sets drain voltage to 1V, while grid voltage is scanned from -10V to 20V.As can be seen that device after annealing
The performance of part, which has, to be substantially improved.
Embodiment 2
The present embodiment is prepared for a kind of device architecture of the thin film transistor (TFT) using metal substrate, and structure type is bottom gate
Coplanar type.
Fig. 5 is that the schematic top plan view figure of the thin film transistor (TFT) 300 manufactured in the present embodiment using metal substrate and section show
It is intended to.As shown in figure 5, thin film transistor (TFT) 300 includes metal Al substrates 301, SiO successively from top to bottom2Buffer protection layer 302,
Al gate electrodes 303, Al2O3Gate insulation layer 304, Au source electrode and drain electrodes 305, IGZO channel layers 306, Si3N4Passivation layer 307.
The preparation method of the thin film transistor (TFT) is as follows：
The metal Al substrates 301 of 10 μ m-thicks are prepared using thermal evaporation deposition method on quartz glass substrate, root mean square is thick
Rugosity is 1.0nm；The SiO of 1 μ m-thick is prepared using PECVD on the metal Al substrates 301 of 10 μ m-thicks2Buffer protection layer 302；It adopts
The Al gate electrodes 303 of 80nm thickness are prepared with magnetron sputtering technique；The Al of 60nm thickness is prepared using ALD2O3Gate insulation layer 304；Using
Thermal evaporation techniques prepare the Au source electrode and drain electrodes 305 of 50nm thickness；The IGZO ditches of 30nm thickness are prepared using magnetron sputtering technique
Then channel layer 306 passes through photoetching and salt acid etch, processing is patterned to channel layer 306；It is thick that 150nm is prepared using PECVD
Si3N4Passivation layer 307.
Device is tested using method same as Example 1, obtains similar as a result, there is performance after annealing
It is substantially improved.
Embodiment 3
The present embodiment is prepared for a kind of device architecture of the thin film transistor (TFT) using metal substrate, and structure type is top-gated
Overlapping type.
The schematic top plan view figure and section of Fig. 6 thin film transistor (TFT)s 400 manufactured in the present embodiment using metal substrate are illustrated
Figure.As shown in fig. 6, thin film transistor (TFT) 400 includes SUS substrates 401, Si successively from top to bottom3N4Buffer protection layer 402, the sources Al electricity
Pole and drain electrode 403, ZnO channel layers 404, zirconium oxide (ZrO2) gate insulation layer 405, Mo gate electrodes 406.
The preparation method of the thin film transistor (TFT) is as follows：
Sputtering method is used to prepare the metal SUS substrates 401 of 40 μ m-thicks on a si substrate, r.m.s. roughness is
2.0nm；The Si of 250nm thickness is prepared using PECVD on the SUS substrates 401 of 40 μ m-thicks3N4Buffer protection layer 402；Using magnetic control
Sputtering technology prepares the Al source electrode and drain electrodes 403 of 90nm thickness；The ZnO channel layers of 40nm thickness are prepared using magnetron sputtering technique
404, then pass through photoetching and salt acid etch, processing is patterned to channel layer 404；50nm is prepared using magnetron sputtering technique
Thick ZrO2Gate insulation layer 405；The Mo gate electrodes 406 of 100nm thickness are prepared using electron beam evaporation technique.
Device is tested using method same as Example 1, obtains similar as a result, there is performance after annealing
It is substantially improved.
Embodiment 4
The present embodiment is prepared for a kind of device architecture of the thin film transistor (TFT) using metal substrate, and structure type is top-gated
Coplanar type.
The schematic top plan view figure and section of Fig. 7 thin film transistor (TFT)s 500 manufactured in the present embodiment using metal substrate are illustrated
Figure.As shown in fig. 7, thin film transistor (TFT) 500 includes metal Ag substrates 501, TiO successively from top to bottom2Buffer protection layer 502, magnesium
Zinc oxygen (MZO) channel layer 503, Cu source electrode and drain electrodes 504, yttrium oxide (Y2O3) gate insulation layer 505, Ni gate electrodes 506.
The preparation method of the thin film transistor (TFT) is as follows：
The metal Ag substrates 501 of 125 μ m-thicks, r.m.s. roughness are prepared using galvanoplastic on borosilicate glass substrate
For 9.9nm；The TiO of 200nm thickness is prepared using magnetron sputtering technique on the Ag substrates 501 of 125 μ m-thicks2Buffer protection layer 502；
The MZO channel layers 503 of 50nm thickness are prepared using magnetron sputtering technique, then pass through photoetching and salt acid etch, to channel layer 503 into
Row graphical treatment；The Cu source electrode and drain electrodes 504 of 50nm thickness are prepared using thermal evaporation techniques；Using magnetron sputtering technique system
The Y of standby 50nm thickness2O3Gate insulation layer 505；The Ni gate electrodes 506 of 100nm thickness are prepared using magnetron sputtering technique.
Device is tested using method same as Example 1, obtains similar as a result, there is performance after annealing
It is substantially improved.
Embodiment 5
The present embodiment is prepared for a kind of device architecture of the thin film transistor (TFT) using metal substrate, the device architecture and implementation
Device architecture is similar described in example 1, and difference lies in use circular electrode shape.
Fig. 8 is that the schematic top plan view figure of the thin film transistor (TFT) 600 manufactured in the present embodiment using metal substrate and section show
It is intended to.As shown in figure 8, thin film transistor (TFT) 600 includes Pt metal substrate 601, polyimides buffer protection layer successively from top to bottom
602, Ti gate electrodes 603, Al2O3Gate insulation layer 604, IGZO channel layers 605, Pd source electrodes 606 and Pd drain electrodes 607, SiO2It is blunt
Change layer 608.
The preparation method of the thin film transistor (TFT) is as follows：
The Pt metal substrate 601 of 30 μ m-thicks, r.m.s. roughness are prepared using sputtering method in MgO crystalline substrates
For 1.5nm；The polyimides buffer protection layer of 700nm thickness is prepared using spin coating method on the Pt metal substrate 601 of 30 μ m-thicks
602；The Ti gate electrodes 603 of 100nm thickness are prepared using magnetron sputtering technique；The Al of 70nm thickness is prepared using ALD2O3Gate insulation layer
604；The IGZO channel layers 605 of 50nm thickness are prepared using magnetron sputtering technique, then pass through photoetching and salt acid etch, to channel layer
605 are patterned processing；The Pd source electrodes 606 and Pd drain electrodes 607 of 70nm thickness are prepared using magnetron sputtering technique；Using
PECVD prepares the SiO of 100nm thickness2Passivation layer 608.
Device is tested using method same as Example 1, obtains similar as a result, there is performance after annealing
It is substantially improved.
Embodiment 6
The present embodiment is prepared for a kind of device architecture of the thin film transistor (TFT) using metal substrate, the device architecture and implementation
Device architecture is similar described in example 1, and difference lies in there is wrong row region between gate electrode and source electrode and drain electrode.
Fig. 9 is that the schematic top plan view figure of the thin film transistor (TFT) 700 manufactured in the present embodiment using metal substrate and section show
It is intended to.As shown in figure 9, thin film transistor (TFT) 700 includes metal Au substrates 701, Al successively from top to bottom2O3Buffer protection layer 702,
Ag gate electrodes 703, HfO2Gate insulation layer 704, ZnO channel layers 705, Mo source electrode and drain electrodes 706, Si3N4Passivation layer 707.
The preparation method of the thin film transistor (TFT) is as follows：
In SrTiO3The metal Au substrates 701 of 20 μ m-thicks, root mean square are prepared in crystalline substrates using thermal evaporation deposition method
Roughness is 1.2nm；The Al of 250nm thickness is prepared using ALD on the metal Au substrates 701 of 20 μ m-thicks2O3Buffer protection layer 702；
The Ag gate electrodes 703 of 50nm thickness are prepared using thermal evaporation techniques；The HfO of 80nm thickness is prepared using ALD2Gate insulation layer 704；Using
Magnetron sputtering technique prepares the ZnO channel layers 705 of 40nm thickness, then passes through photoetching and salt acid etch, figure is carried out to channel layer 705
Shapeization processing；The Mo source electrode and drain electrodes 706 of 50nm thickness are prepared using magnetron sputtering technique；It is thick that 150nm is prepared using PECVD
Si3N4Passivation layer 707.
Device is tested using method same as Example 1, obtains similar as a result, there is performance after annealing
It is substantially improved.
Embodiment 7
The present embodiment is prepared for a kind of device architecture of the thin film diode using metal substrate, and device architecture belongs to field
The structure of effect diode.
Figure 10 is the structure top view and sectional view of the thin film diode 800 manufactured in the present embodiment using metal substrate.
As shown in Figure 10, thin film diode 800 includes Ni metal substrate 801, Si successively from top to bottom3N4Buffer protection layer 802, Cr
One electrode 803, Al2O3Insulating layer 804, IGZO channel layers 805, Au connection electrodes 806, Au second electrodes 807, SiO2Passivation layer
808。
The preparation method of the thin film diode is as follows：
The Ni metal substrate 801 of 25 μ m-thicks is prepared using chemical vapour deposition technique in fused silica glass substrate,
Its r.m.s. roughness is 2.5nm；The Si of 500nm thickness is prepared using PECVD on the Ni metal substrate 801 of 25 μ m-thicks3N4Buffering
Protective layer 802；The Cr first electrodes 803 of 80nm thickness are prepared using magnetron sputtering technique；The Al of 70nm thickness is prepared using ALD2O3Absolutely
Edge layer 804；The IGZO channel layers 805 of 30nm thickness are prepared using magnetron sputtering technique；100nm thickness is prepared using thermal evaporation techniques
Au connection electrodes 806 and second electrode 807；The SiO of 100nm thickness is prepared using PECVD2Passivation layer 808.
It sets second electrode voltage to 0V, is scanned from -20V to 20V to first electrode voltage, obtains diode
Rectification characteristic curve.Similarly, performance has and is substantially improved after annealing.
Claims (10)
1. a kind of flexible metal substrate for making flexible thin-film transistor or fexible film diode, the flexible metal substrate
It is attached on parent, which is characterized in that when being observed under 10 × 10 μm of scanning range by atomic force microscope, the flexibility
The r.m.s. roughness of metal substrate<10nm.
2. flexible metal substrate according to claim 1, wherein the r.m.s. roughness of the flexible metal substrate is
0.5~9.9nm, it is preferable that the thickness of the flexible metal substrate is 5~125 μm.
3. flexible metal substrate according to claim 1 or 2, wherein the material of the flexible metal substrate be Ag, Al,
Au, Co, Cr, Cu, Fe, Ir, Mo, Ni, Pb, Pd, Pt, Rh, Ru, Sn, Ta, Ti, V, W, Zr and one kind in stainless steel (SUS) or
It is a variety of, it is preferably one or more in Al, Cu, Fe and SUS.
4. flexible metal substrate according to any one of claim 1 to 3, wherein the parent is glass material or nothing
Machine crystalline material, it is preferable that the glass material is silicate glass, borosilicate glass, phosphate glass, melting titanium dioxide
It is one or more in silica glass and quartz glass；The inorganic crystal material is sapphire, ZnO crystal, TiO2Crystal, YSZ
Crystal, SiC crystal, SrTiO3Crystal, Si crystal, MgO crystal, LiTaO3Crystal, MgAl2O4Crystal, LiAlO2Crystal and GaN are brilliant
It is one or more in body.
5. according to the preparation method of flexible metal substrate described in any one of claims 1 to 4, which includes：In mother
Deposited metal forms the flexible metal substrate on body.
6. according to the method described in claim 5, wherein, the method for deposition be electron beam vapor deposition method, thermal evaporation deposition method,
Sputtering method, chemical vapour deposition technique or galvanoplastic, preferably electron beam vapor deposition method, thermal evaporation deposition method or chemical gas
Phase sedimentation.
7. a kind of flexible thin-film transistor, the flexible thin-film transistor include：Flexible metal substrate, buffer protection layer, raceway groove
Layer, gate insulation layer, gate electrode, source electrode, drain electrode and passivation layer, wherein the flexible metal substrate is Claims 1-4
Any one of described in flexible metal substrate or claim 5 or 6 the methods made from flexible metal substrate.
8. a kind of fexible film diode, the fexible film diode include：Flexible metal substrate, buffer protection layer, raceway groove
Layer, insulating layer, first electrode, second electrode, connection electrode and passivation layer, wherein the flexible metal substrate is claim 1
To described in any one of 4 flexible metal substrate or claim 5 or 6 the methods made from flexible metal substrate.
9. flexible thin-film transistor according to claim 7 or fexible film diode according to any one of claims 8,
In, the material of the buffer protection layer be aluminium oxide, hafnium oxide, silica, silicon nitride, titanium oxide, yttrium oxide, polyimides and
It is one or more in polytetrafluoroethylene (PTFE)；Preferably, the material of the buffer protection layer is polyimides and polytetrafluoroethylene (PTFE)
Mixture；Preferably, the thickness of the buffer protection layer is 100nm to 1 μm.
10. a kind of method making flexible thin-film transistor or fexible film diode, the described method comprises the following steps：In mother
Deposited metal forms flexible metal substrate on body；Buffer protection layer is deposited in the flexible metal substrate；It is protected in the buffering
Thin film transistor (TFT) or thin film diode are prepared on sheath；By the metal substrate and thin film transistor (TFT) thereon or thin film diode
It is removed from the parent, forms flexible thin-film transistor or fexible film diode based on metal substrate.
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111900191A (en) * | 2020-08-10 | 2020-11-06 | 合肥京东方显示技术有限公司 | Flexible substrate, display panel and preparation method thereof |
| CN112164657A (en) * | 2020-09-24 | 2021-01-01 | 山东华芯半导体有限公司 | Method for reducing surface roughness of oxide semiconductor by low-temperature annealing |
| CN116155227A (en) * | 2023-01-09 | 2023-05-23 | 上海馨欧集成微电有限公司 | Surface acoustic wave filter and preparation method thereof |
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| CN101989618A (en) * | 2009-08-07 | 2011-03-23 | 清华大学 | Flexible thin film transistor and preparation method thereof |
| CN102534695A (en) * | 2010-12-29 | 2012-07-04 | 京东方科技集团股份有限公司 | Metal substrate for flexible display and preparation method for metal substrate |
| CN103299448A (en) * | 2010-09-29 | 2013-09-11 | Posco公司 | Method for manufacturing a flexible electronic device using a roll-shaped motherboard, flexible electronic device, and flexible substrate |
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| CN101989618A (en) * | 2009-08-07 | 2011-03-23 | 清华大学 | Flexible thin film transistor and preparation method thereof |
| CN103299448A (en) * | 2010-09-29 | 2013-09-11 | Posco公司 | Method for manufacturing a flexible electronic device using a roll-shaped motherboard, flexible electronic device, and flexible substrate |
| CN102534695A (en) * | 2010-12-29 | 2012-07-04 | 京东方科技集团股份有限公司 | Metal substrate for flexible display and preparation method for metal substrate |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN111900191A (en) * | 2020-08-10 | 2020-11-06 | 合肥京东方显示技术有限公司 | Flexible substrate, display panel and preparation method thereof |
| CN112164657A (en) * | 2020-09-24 | 2021-01-01 | 山东华芯半导体有限公司 | Method for reducing surface roughness of oxide semiconductor by low-temperature annealing |
| CN116155227A (en) * | 2023-01-09 | 2023-05-23 | 上海馨欧集成微电有限公司 | Surface acoustic wave filter and preparation method thereof |
| CN116155227B (en) * | 2023-01-09 | 2024-04-26 | 上海馨欧集成微电有限公司 | Surface acoustic wave filter and preparation method thereof |
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