CN108364909B - Chip with functions of transmitting and receiving optical signals and manufacturing method thereof - Google Patents
Chip with functions of transmitting and receiving optical signals and manufacturing method thereof Download PDFInfo
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- CN108364909B CN108364909B CN201810055541.2A CN201810055541A CN108364909B CN 108364909 B CN108364909 B CN 108364909B CN 201810055541 A CN201810055541 A CN 201810055541A CN 108364909 B CN108364909 B CN 108364909B
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- 230000003287 optical effect Effects 0.000 title claims abstract description 34
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 16
- 239000000758 substrate Substances 0.000 claims abstract description 68
- 239000010931 gold Substances 0.000 claims abstract description 34
- 229910052737 gold Inorganic materials 0.000 claims abstract description 27
- 238000005530 etching Methods 0.000 claims abstract description 20
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims abstract description 19
- 238000005516 engineering process Methods 0.000 claims abstract description 18
- 238000003466 welding Methods 0.000 claims abstract description 18
- 238000001259 photo etching Methods 0.000 claims abstract description 10
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 48
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 48
- 229910002601 GaN Inorganic materials 0.000 claims description 23
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 23
- 229910052594 sapphire Inorganic materials 0.000 claims description 10
- 239000010980 sapphire Substances 0.000 claims description 10
- 238000000034 method Methods 0.000 claims description 9
- 238000001312 dry etching Methods 0.000 claims description 3
- 230000008020 evaporation Effects 0.000 claims description 3
- 238000001704 evaporation Methods 0.000 claims description 3
- 238000004544 sputter deposition Methods 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229910052700 potassium Inorganic materials 0.000 description 4
- 239000011591 potassium Substances 0.000 description 4
- -1 potassium nitride Chemical class 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 230000002349 favourable effect Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
- Led Devices (AREA)
- Light Receiving Elements (AREA)
Abstract
The invention discloses a chip with functions of transmitting and receiving optical signals and a manufacturing method thereof, wherein the manufacturing method comprises the following steps: s1: growing an LED epitaxial layer on a substrate to form an LED chip; s2: etching partial area of the LED chip to the substrate by utilizing a photoetching technology and an etching technology; s3: growing an Au layer on the substrate to form a gold bonding pad; s4: welding a photoelectric detector chip on the gold welding pad; s5: and growing the electrode. The invention integrates the transmitting and receiving functions of the optical signal on one chip, the light fed back can return according to the original path of the light-emitting optical path, and the secondary optical path design is not needed, thereby saving the great optical path design cost.
Description
Technical Field
The invention relates to the field of semiconductor devices, in particular to a chip with functions of transmitting and receiving optical signals and a manufacturing method thereof.
Background
The traditional optical signal transmitting and receiving equipment is respectively completed by two devices, one device is used for transmitting optical signals by light emitting devices such as LEDs, and the other device is used for receiving optical signals fed back by a photoelectric detector and converting the optical signals into electric signals to be output, so that the transmitting and receiving functions of the optical signals are completed.
Disclosure of Invention
The invention aims to provide a chip with functions of transmitting and receiving optical signals and a manufacturing method thereof, and solves the problem that no chip with functions of transmitting and receiving optical signals simultaneously exists at present.
In order to solve the technical problems, the invention adopts the following technical scheme:
the chip with the functions of transmitting and receiving optical signals comprises a substrate, a photoelectric detector chip and LED epitaxial layers symmetrically arranged on two sides of the center of the substrate, wherein a gold welding pad is arranged at the center of the substrate, the photoelectric detector chip is welded on the gold welding pad, and electrodes are arranged above the LED epitaxial layers and the photoelectric detector chip.
According to a further scheme, the substrate is a sapphire substrate, the LED epitaxial layer sequentially comprises an N-type gallium nitride layer, a quantum well layer and a P-type gallium nitride layer from bottom to top, and the total thickness of the LED epitaxial layer is 5-10 microns.
In a further scheme, the photoelectric detector chip is a gallium arsenide-based detector chip, and the gallium arsenide-based detector chip sequentially comprises a gallium arsenide substrate, a U-shaped gallium arsenide layer, an N-shaped gallium arsenide layer, a U-shaped gallium arsenide layer and a P-shaped gallium arsenide layer from bottom to top.
A method for manufacturing a chip with functions of transmitting and receiving optical signals comprises the following steps:
s1: growing an LED epitaxial layer on a substrate to form an LED chip;
s2: etching partial area of the LED chip to the substrate by utilizing a photoetching technology and an etching technology;
s3: growing an Au layer on the substrate to form a gold bonding pad;
s4: welding a photoelectric detector chip on the gold welding pad;
s5: and growing the electrode.
According to a further scheme, the substrate is a sapphire substrate, and the LED epitaxial layer sequentially comprises an N-type gallium nitride layer, a quantum well layer and a P-type gallium nitride layer from bottom to top.
According to a further scheme, after the LED chip is formed in the step S1, the region in the middle of the chip is etched to the N-type gallium nitride layer by utilizing photoetching and dry etching technologies, and the etching depth is 0.5-1.5 microns.
In a further scheme, in the step S2, partial areas of the LED chip are etched to the etching depth of the sapphire substrate of 5-10 microns by utilizing a photoetching technology and an etching technology.
Further, the gold pad growth thickness in the step of S3 is 15000-25000 angstroms.
In a further proposal, the photoelectric detector chip welded on the gold bonding pad in the step S4 is a gallium arsenide-based detector,
the gallium arsenide-based detector is characterized in that the gallium arsenide-based detector sequentially comprises a gallium arsenide substrate, a U-shaped gallium arsenide layer, an N-shaped gallium arsenide layer, a U-shaped gallium arsenide layer and a P-shaped gallium arsenide layer from bottom to top.
Further, the specific method for growing the electrodes in the step S5 is to grow Au layers on the P-type gallium nitride layer and the N-type gallium nitride layer by using an evaporation or sputtering technique to form gold electrodes respectively.
Compared with the prior art, the invention has the beneficial effects that:
the LED epitaxial layer and the substrate form an LED chip for emitting light, the center of the substrate is provided with the photoelectric detector chip for receiving the light emitted by the LED, and the LED chip and the detector are combined into the same chip, so that the size of the chip is smaller, and the high integration of a product is facilitated.
The invention integrates the transmitting and receiving functions of optical signals on one chip, and the light fed back can return according to the original path of the light-emitting optical path without secondary optical path design, thereby saving great optical path design cost.
Drawings
FIG. 1 is a top view of the structure of the present invention.
FIG. 2 is a side view in the direction A-A of the structure of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
Example 1:
referring to fig. 1, a chip with functions of transmitting and receiving optical signals comprises a substrate 1, a photodetector chip 4 and LED epitaxial layers 2 symmetrically arranged on two sides of the center of the substrate 1, wherein a gold bonding pad 3 is arranged at the center of the substrate 1, the photodetector chip 4 is welded on the gold bonding pad 3, and electrodes are arranged above the LED epitaxial layers 2 and the photodetector chip 4.
The LED epitaxial layer and the substrate form an LED chip for emitting light, the center of the substrate is provided with a photoelectric detector chip for receiving light emitted by the LED, the LED chip and the detector are combined into the same chip, the size of the chip is smaller, the use of a narrow space is facilitated, the light fed back can return according to the original path of a light emitting light path, the design of a secondary light path is not needed, and the design cost of the light path is greatly saved.
In order to guarantee the accuracy of receiving optical signals, the photoelectric detector chip needs to be welded at the geometric center of the substrate, and the deviation cannot exceed 20 micrometers. The LED epitaxial layers are symmetrically designed in the chip design, so that the whole light emitting of the chip can be ensured to be close to the center of the chip, and the chip is favorable for transmitting and receiving optical signals of the chip.
Example 2:
on the basis of the above embodiment, the substrate 1 is a sapphire substrate, the LED epitaxial layer 2 is sequentially an N-type gallium nitride layer 21, a quantum well layer 22 and a P-type gallium nitride layer 23 from bottom to top, and the total thickness of the LED epitaxial layer 2 is 5-10 micrometers.
The photoelectric detector chip 4 is one of a silicon-based detector chip, a gallium arsenide-based detector chip and a potassium nitride-based detector chip. The detector chip can select one of a silicon-based detector chip, a gallium arsenide-based detector chip and a potassium nitride-based detector chip according to the wave band of the feedback light.
Example 3:
on the basis of the above embodiment, the photodetector chip 4 is a gaas-based detector chip, and the gaas-based detector chip has a structure including, in order from bottom to top, a gaas substrate 41, a U-gaas layer 42, an N-gaas layer 43, a U-gaas layer 44, and a P-gaas layer 45.
A method for manufacturing a chip with functions of transmitting and receiving optical signals comprises the following steps:
s1: growing an LED epitaxial layer 2 on a substrate 1 to form an LED chip; the substrate 1 is a sapphire substrate, and the LED epitaxial layer 2 is sequentially provided with an N-type gallium nitride layer 21, a quantum well layer 22 and a P-type gallium nitride layer 23 from bottom to top. After the LED chip is formed, the region in the middle of the chip is etched to the N-type gallium nitride layer 21 by utilizing photoetching and dry etching technologies, and the etching depth is 0.5-1.5 microns.
S2: etching partial area of the LED chip to the substrate by utilizing a photoetching technology and an etching technology; and etching partial area of the LED chip to the etching depth of the sapphire substrate of 5-10 microns by using a photoetching technology and an etching technology.
S3: growing an Au layer on the substrate to form a gold bonding pad; the growth thickness of the gold bonding pad is 15000-25000 angstroms.
S4: welding a photoelectric detector chip 4 on the gold welding pad; the photoelectric detector 4 chip welded on the gold welding pad 3 is a gallium arsenide-based detector. The gallium arsenide-based detector is composed of a gallium arsenide substrate 41, a U-shaped gallium arsenide layer 42, an N-shaped gallium arsenide layer 43, a U-shaped gallium arsenide layer 44 and a P-shaped gallium arsenide layer 45 from bottom to top in sequence.
S5: and growing the electrode. The specific method for growing the electrodes is to grow Au layers on the P-type gallium nitride 23 and the N-type gallium nitride 21 by using an evaporation or sputtering technology to form gold electrodes respectively.
In order to guarantee the accuracy of the received optical signal, the photoelectric detector chip 4 needs to be welded at the geometric center of the substrate, and the deviation cannot exceed 20 micrometers. The LED epitaxial layers are symmetrically designed in the chip design, so that the whole light emitting of the chip can be ensured to be close to the center of the chip, and the chip is favorable for transmitting and receiving optical signals of the chip.
The chip with the function of transmitting and receiving optical signals manufactured by the manufacturing method comprises a substrate 1, a photoelectric detector chip 4 and LED epitaxial layers 2 symmetrically arranged on two sides of the center of the substrate 1, wherein a gold welding pad 3 is arranged at the center of the substrate 1, the photoelectric detector chip 4 is welded on the gold welding pad 3, and electrodes are arranged above the LED epitaxial layers 2 and the photoelectric detector chip 4.
The LED epitaxial layer and the substrate form an LED chip for emitting light, the photoelectric detector chip 4 is arranged at the center of the substrate and used for receiving light emitted by the LED, the LED chip and the detector are combined into the same chip, the size of the chip is smaller, the use of a small space is facilitated, the light fed back can be returned according to the original path of a light emitting light path, the secondary light path design is not needed, and the great light path design cost is saved.
In order to guarantee the accuracy of the received optical signal, the photoelectric detector chip 4 needs to be welded at the geometric center of the substrate, and the deviation cannot exceed 20 micrometers. The LED epitaxial layers are symmetrically designed in the chip design, so that the whole light emitting of the chip can be ensured to be close to the center of the chip, and the chip is favorable for transmitting and receiving optical signals of the chip.
The substrate 1 is a sapphire substrate, the LED epitaxial layer 2 is an N-type gallium nitride layer 21, a quantum well layer 22 and a P-type gallium nitride layer 23 from bottom to top in sequence, and the total thickness of the LED epitaxial layer 2 is 5-10 microns.
The photoelectric detector chip 4 is one of a silicon-based detector chip, a gallium arsenide-based detector chip and a potassium nitride-based detector chip. The photoelectric detector chip 4 can select one of a silicon-based detector chip, a gallium arsenide-based detector chip and a potassium nitride-based detector chip according to the wave band of the feedback light.
The photoelectric detector chip 4 is a gallium arsenide-based detector chip, and the gallium arsenide-based detector chip sequentially comprises a gallium arsenide substrate 41, a U-shaped gallium arsenide layer 42, an N-shaped gallium arsenide layer 43, a U-shaped gallium arsenide layer 44 and a P-shaped gallium arsenide layer 45 from bottom to top.
The electrodes on the LED epitaxial layer 2 comprise a light-emitting N electrode 24 and a light-emitting P electrode 25, the light-emitting N electrode 24 is arranged on the N-type gallium nitride layer 21, the light-emitting N electrodes 24 on two sides of the center of the substrate 1 are in central symmetry with the center of the substrate 1, the light-emitting P electrode 25 is arranged on the P-type gallium nitride layer 23, and the light-emitting P electrodes 25 on two sides of the center of the substrate 1 are in central symmetry with the center of the substrate 1. The electrodes in the chip are symmetrically arranged, so that short circuit caused by crossing of lines can be avoided during wiring.
The P-electrode 46 is provided on the photodetector chip 4, and the P-electrode 46 is provided on the P-type gallium arsenide layer 45 of the photodetector chip 4.
A second pad 5 is also provided on the substrate 1.
Although the invention has been described herein with reference to a number of illustrative embodiments thereof, it should be understood that numerous other modifications and embodiments can be devised by those skilled in the art that will fall within the spirit and scope of the principles of this disclosure. More specifically, various variations and modifications are possible in the component parts and/or arrangements of the subject combination arrangement within the scope of the disclosure, the drawings and the appended claims. In addition to variations and modifications in the component parts and/or arrangements, other uses will also be apparent to those skilled in the art.
Claims (8)
1. A chip having a function of transmitting and receiving optical signals, characterized in that: the photoelectric detector comprises a substrate (1), a photoelectric detector chip (4) and LED epitaxial layers (2) symmetrically arranged on two sides of the center of the substrate (1), wherein a gold welding pad (3) is arranged at the center of the substrate (1), the photoelectric detector chip (4) is welded on the gold welding pad (3), and electrodes are arranged above the LED epitaxial layers (2) and the photoelectric detector chip (4);
the photoelectric detector chip (4) is welded at the geometric center of the substrate, and the deviation cannot exceed 20 micrometers;
substrate (1) is the sapphire substrate, supreme N type gallium nitride layer (21), quantum well layer (22) and P type gallium nitride layer (23) are in proper order down followed in LED epitaxial layer (2), the gross thickness of LED epitaxial layer (2) is 5 ~ 10 microns.
2. The chip having a function of transmitting and receiving an optical signal according to claim 1, wherein: the photoelectric detector chip (4) is a gallium arsenide-based detector chip, and the structure of the gallium arsenide-based detector chip sequentially comprises a gallium arsenide substrate (41), a U-shaped gallium arsenide layer (42), an N-shaped gallium arsenide layer (43), a U-shaped gallium arsenide layer (44) and a P-shaped gallium arsenide layer (45) from bottom to top.
3. A method for manufacturing a chip having functions of transmitting and receiving optical signals according to claim 1 or 2, wherein: the method comprises the following steps:
s1: growing an LED epitaxial layer (2) on a substrate (1) to form an LED chip;
s2: etching partial area of the LED chip to the substrate (1) by utilizing photoetching technology and etching technology;
s3: growing an Au layer on a substrate (1) to form a gold bonding pad (3);
s4: welding a photoelectric detector chip (4) on the gold welding pad (3);
s5: growing an electrode on the substrate,
the substrate (1) is a sapphire substrate;
the chip with the functions of transmitting and receiving optical signals manufactured by the manufacturing method comprises a substrate (1), a photoelectric detector chip (4) and LED epitaxial layers (2) symmetrically arranged on two sides of the center of the substrate (1), wherein a gold welding pad (3) is arranged at the center of the substrate (1), the photoelectric detector chip (4) is welded on the gold welding pad (3), and electrodes are arranged above the LED epitaxial layers (2) and the photoelectric detector chip (4);
the photoelectric detector chip (4) is welded at the geometric center of the substrate, and the deviation cannot exceed 20 microns.
4. The method of manufacturing according to claim 3, wherein: and after the LED chip is formed in the step S1, etching the area in the middle of the chip to the N-type gallium nitride layer (21) by utilizing photoetching and dry etching technologies, wherein the etching depth is 0.5-1.5 microns.
5. The method of manufacturing according to claim 3, wherein: and in the step S2, etching partial areas of the LED chip to the etching depth of the sapphire substrate of 5-10 microns by utilizing a photoetching technology and an etching technology.
6. The method of manufacturing according to claim 3, wherein: the growth thickness of the gold pad (3) in the step S3 is 15000-25000 angstroms.
7. The method of manufacturing according to claim 3, wherein: the photoelectric detector chip (4) welded on the gold welding pad (3) in the step of S4 is a gallium arsenide-based detector; the gallium arsenide-based detector sequentially comprises a gallium arsenide substrate (41), a U-shaped gallium arsenide layer (42), an N-shaped gallium arsenide layer (43), a U-shaped gallium arsenide layer (44) and a P-shaped gallium arsenide layer (45) from bottom to top.
8. The method of manufacturing according to claim 7, wherein: the specific method for growing the electrodes in the step S5 is to grow Au layers on the P-type gallium nitride layer (23) and the N-type gallium nitride layer (21) by using an evaporation or sputtering technique to form gold electrodes respectively.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201810055541.2A CN108364909B (en) | 2018-01-19 | 2018-01-19 | Chip with functions of transmitting and receiving optical signals and manufacturing method thereof |
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| CN201810055541.2A CN108364909B (en) | 2018-01-19 | 2018-01-19 | Chip with functions of transmitting and receiving optical signals and manufacturing method thereof |
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| CN108364909A CN108364909A (en) | 2018-08-03 |
| CN108364909B true CN108364909B (en) | 2021-01-26 |
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| CN112082624A (en) * | 2020-09-08 | 2020-12-15 | 南方科技大学 | Liquid level detection device and detection method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| EP1158775A1 (en) * | 2000-05-15 | 2001-11-28 | EASTMAN KODAK COMPANY (a New Jersey corporation) | Self-illuminating colour imaging device |
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| CN1282109A (en) * | 1999-07-27 | 2001-01-31 | 夏普公司 | Optical receiving device integrated with circuit and manufacturing method thereof |
| CN1469472A (en) * | 2002-06-18 | 2004-01-21 | ������������ʽ���� | Optical interconnecting integrated circuit, method for producing optical interconnecting integrated circuit, photoelectrical apparatus and electronic instrument |
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