CN108288582A - A kind of wafer scale GaN device substrate transfer method - Google Patents
A kind of wafer scale GaN device substrate transfer method Download PDFInfo
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- 239000000758 substrate Substances 0.000 title claims abstract description 51
- 238000000034 method Methods 0.000 title claims abstract description 46
- 238000012546 transfer Methods 0.000 title claims abstract description 21
- 238000000137 annealing Methods 0.000 claims abstract description 18
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims abstract description 14
- 230000008569 process Effects 0.000 claims abstract description 9
- 229910021529 ammonia Inorganic materials 0.000 claims abstract description 7
- 239000013078 crystal Substances 0.000 claims abstract description 7
- 238000003851 corona treatment Methods 0.000 claims abstract description 6
- 238000012545 processing Methods 0.000 claims abstract description 6
- 235000012431 wafers Nutrition 0.000 claims description 49
- 206010034960 Photophobia Diseases 0.000 claims description 13
- 208000013469 light sensitivity Diseases 0.000 claims description 13
- 230000004913 activation Effects 0.000 claims description 9
- 238000001994 activation Methods 0.000 claims description 9
- 238000004528 spin coating Methods 0.000 claims description 8
- 238000011161 development Methods 0.000 claims description 5
- 230000003746 surface roughness Effects 0.000 claims description 4
- 238000004140 cleaning Methods 0.000 claims description 3
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims 1
- 239000000908 ammonium hydroxide Substances 0.000 claims 1
- 230000006835 compression Effects 0.000 claims 1
- 238000007906 compression Methods 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 abstract description 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 42
- 229910002601 GaN Inorganic materials 0.000 description 40
- 239000010410 layer Substances 0.000 description 10
- 239000003292 glue Substances 0.000 description 7
- 239000000463 material Substances 0.000 description 6
- 229910052594 sapphire Inorganic materials 0.000 description 5
- 239000010980 sapphire Substances 0.000 description 5
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000005498 polishing Methods 0.000 description 4
- 229910010271 silicon carbide Inorganic materials 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000007711 solidification Methods 0.000 description 3
- 230000008023 solidification Effects 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- FFEARJCKVFRZRR-UHFFFAOYSA-N methionine Chemical compound CSCCC(N)C(O)=O FFEARJCKVFRZRR-UHFFFAOYSA-N 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/185—Joining of semiconductor bodies for junction formation
- H01L21/187—Joining of semiconductor bodies for junction formation by direct bonding
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
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Abstract
The present invention discloses a kind of transfer method based on wafer scale GaN device initial substrates, belongs to semiconductor process technique field.By covering one layer of removable thicker protection supporting layer on former piece surface, after removing former substrate, two disk Direct Bondings.This method comprises the following steps：(1) the surface covering protection supporting layer after positive technique is completed to wafer scale GaN device；(2) initial substrates are removed；(3) the disk back side and Si substrate surfaces to be transferred are cleaned；(4) N is carried out to the disk back side2Gas corona treatment；(5) O is carried out to Si crystal column surfaces2Gas corona treatment；(6) the two is put into ammonia spirit and is bonded in advance；(7) by the sample posted in N2Apply external force bonding under environment；(8) wafer after para-linkage carries out process annealing processing.(9) dissolving removal sealer in developer solution will be put into after the wafer exposure after annealing.The present invention can realize the substrate transfer of GaN device.
Description
Technical field
The invention belongs to semiconductor process technique fields, and in particular to a kind of method of wafer scale GaN device substrate transfer.
Background technology
Due to the high electron saturation velocities and broad-band gap of high electron mobility transistor (HEMT), gallium nitride (GaN) for
High power and high-frequency device such as high electron mobility transistor (HEMT) are very attractive materials.Currently, extension GaN
It can be in foreign substrate such as silicon (Si), sapphire (Al2O3) or silicon carbide (SiC) on and grow in homo-substrate.It is grown in
GaN on Si is most preferred, because Si chips can be used for the diameter of bigger and have thermal conductivity more higher than sapphire.So
And the quality of the extension GaN grown on Si is due to high penetration dislocation density (TDD) and since big heat and lattice mismatch are led
The crack of cause and be restricted, which results in difference device performance and low yield.
Recently, several extension stripping means have been developed, these methods reuse expensive SiC substrate even GaN
Substrate.By these extension stripping means, the high-quality GaN epitaxial layer grown in SiC substrate or GaN substrate can be in device
Any desired target substrate is transferred to low cost after manufacture.Since the thickness of GaN epitaxial layer may only have several microns,
It is necessary to processing generally for the very sensitive adhesive of high temperature or heat release band.In order to during being bonded to target substrate
Device wafer and processing material are not damaged, it is expected that low-temperature bonding technique.In addition, device layer and target
Interface resistance between substrate answer it is as small as possible, to obtain better device performance, especially for high power and
Frequency applications.It should avoid using epoxy resin and silica (SiO2) etc. the lower thicker middle layer of thermal conductivity.Therefore urgent
Need the direct welding procedure of low temperature.
Surface-activated bond (SAB) is the room-temperature bonding method in ultrahigh vacuum (UHV).In this approach, it uses
Ion beam bombardment surface active is to remove the oxide and pollutant on bonding surface.After surface active, even if in room temperature
Under, activating surface in UHV also by with enough activity to form covalent bond at bonded interface.It has been carried out at room temperature
Firm connection between a variety of materials of such as semiconductor and metal etc.Since having for Si materials is at low cost, relatively
The advantages such as high thermal conductivity, so Si materials are an extraordinary selections as target substrate.
Invention content
It is thicker by surface spin coating the purpose of the present invention is to provide a kind of method of wafer scale GaN device substrate transfer
Light sensitivity BCB, then formed protection supporting layer surface-activated bond mode, with realize foreign substrate (Si, sapphire,
SiC it) is shifted with the substrate of the GaN device of the GaN material of homo-substrate (GaN) epitaxial growth manufacture, meets GaN HMET devices
With the radio-frequency performance of HBT (Heterojunction Bipolar Transistors) device, to solve device in high power work due to device temperature
Caused by raising the problem of reduced performance.
To solve the above-mentioned problems, the present invention provides a kind of wafer scale GaN device substrate transfer methods, including following step
Suddenly：
(1) the surface covering protection supporting layer after positive technique is completed to wafer scale GaN device；
(2) initial substrates of GaN device are removed；
(3) back side of GaN device and Si substrate surfaces to be transferred are cleaned；
(4) N is carried out to the back side of GaN device2Gas corona treatment；
(5) O is carried out to Si substrate wafers surface to be transferred2Gas corona treatment；
(6) GaN device and Si wafers are put into ammonia spirit and are bonded in advance；
(7) by the wafer sample posted after pre- bonding in N2Apply external force under environment to be bonded；
(8) wafer after para-linkage carries out process annealing processing；
(9) the protection supporting layer of the crystal column surface after process annealing is removed.
In the above scheme, preferred device is GaN HEMT devices, GaN HBT devices, and protective layer is photosensitive BCB
(XUS35078 negative light-sensitive BCB), thickness are more than 30 μm.GaN device disk is placed on heat baking on hot plate, is removed in BCB glue
Solvent, heat dry temperature and are maintained at 100 DEG C~200 DEG C, and heat dries time 100s~200s, prevents high temperature BCB solidifications from causing to have shifted
It can not be removed at rear BCB glue.
In the above scheme, it is 110 DEG C that preferred heat, which dries temperature, and heat dries time 130s.
In the above scheme, preferred initial substrates removal is removed using KrF excimer lasers.
In the above scheme, preferred cleaning method uses standard RCA clean, cleans 3 times, AFM (atomic force microscope)
Observe surface roughness ＜ 1nm.
In the above scheme, preferred N2Gas gas flow is 50~100sccm, and activation power is 150~250W, activation
Time 30s.
In the above scheme, preferred O2Gas gas flow is 50~100sccm, 150~250W of power is activated, when activation
Between 30s.
In the above scheme, preferred ammonia spirit a concentration of 29%, temperature are 20~50 DEG C.
In the above scheme, preferred bonding pressure is 100~500Kg, and 100~400 DEG C of bonding temperature, bonding time is
1h。
In the above scheme, preferred low-temperature anneal temperature is 150 DEG C, annealing time 60min.
In the above scheme, step (9), which will be put into after the wafer exposure after annealing in developer solution, removes surface protection support
Layer, preferred developer solution are DS3000, developing time：5~15min.
The present invention provides a kind of wafer scale GaN device substrate transfer method, provides protection supporting layer using bcb film, simultaneously
Surface BCB is removed by exposure after the completion of substrate shifts；Surface chemistry is increased using wet-cleaning, surface plasma processing
State, surface dangling bonds further increase bonding effect, realize GaN then by being bonded in advance in the solution containing a large amount of-OH
The substrate of device shifts；Compared to Sapphire Substrate, Si substrates have good heat dissipation characteristics, meet GaN HMET devices and
The radio-frequency performance of HBT devices leads to performance degradation in high power work to reduce device with temperature raising.
Description of the drawings
Fig. 1 is the cross-sectional view of wafer before bonding；
Fig. 2 is that GaN device completes positive technique rear surface spin coating light sensitivity BCB cross-sectional views；
Fig. 3 is plasma-activated schematic diagram；
Fig. 4 is to be bonded schematic diagram in advance in ammonia spirit；
Fig. 5 is schematic diagram after removal surface light sensitivity BCB protective layers.
Wherein, 1- Silicon Wafers, 2- Sapphire Substrates, 3-GaN devices, 4- light sensitivity BCB, 5-N2Plasma, 6-O2Deng from
Daughter.
Specific implementation mode
To make the objectives, technical solutions, and advantages of the present invention clearer, below in conjunction with specific embodiment, and reference
Attached drawing, the present invention is described in more detail.
This wafer scale GaN device substrate transfer method provided by the invention, first the GaN devices to completing positive technique
Part crystal column surface spin coating light sensitivity BCB forms protection supporting layer, by KrF excimer laser peeling liners bottom, then to two wafers
(GaN device wafer and Silicon Wafer) carries out surface clean, is bonded in advance in ammonia spirit, is finally bonded, anneals and remove surface
Light sensitivity BCB glue.
Embodiment 1：
As shown in Fig. 1~5, according to the wafer bonding method that the present invention is implemented, this approach includes the following steps：
Step 1：After wafer scale GaN device 3 completes positive technique, in disk surfaces spin coating light sensitivity BCB4, rotating speed setting
For 1000rpm, time 1min；GaN device disk is placed on heat baking on hot plate, removes BCB glue internal solvents, heat is dried temperature and kept
At 100 DEG C~200 DEG C, BCB glue can not remove after the completion of preventing high temperature BCB solidifications from leading to transfer.Fig. 1 is wafer section before bonding
Schematic diagram, Fig. 2 are that GaN device completes positive technique rear surface spin coating light sensitivity BCB cross-sectional views.
Step 2：Sapphire Substrate 2 is removed by KrF excimer lasers.
Step 3：Standard RCA clean is used to the GaN device disk 3 after Si wafers 1 and removal substrate.Specific further includes working as
(it is typically larger than 2nm) when the roughness of crystal column surface is larger, generally requires and carry out surface chemical mechanical polishing polishing treatment, make it
The demand that surface roughness reaches suitable bonding chip is usually less than (1nm).
Step 4：Plasma-activated, N is carried out to the back side of wafer scale GaN device 32The gas flow of plasma 5 is
60sccm, activation power are 200W, soak time 30s.
Step 5：Equal ex vivo activations, O are carried out to 1 surface of Si wafers26 gas flow of plasma is 60sccm, activates work(
Rate 100W, soak time 30s.
Step 6：Two pieces of disks are put into ammonia spirit, surface is in contact with each other, and slight amount is bonded in advance, as shown in Figure 4.
Step 7：Two wafers, which are put into bonder, makes its bonding, and in this step, the bonding pressure used is 250Kg, key
It is 150 DEG C to close temperature, and bonder cavity is N2Atmosphere, time 1h；Sectional view as shown in Figure 5 after bonding.
Step 8：Bonding pad is put into annealing furnace, 150 DEG C of annealing temperature, annealing time 60min.
Step 9：Wafer exposure development dissolving light sensitivity BCB4 after annealing, developer temperatur are 60 DEG C, developing time
10min；Post-development wafer sectional view is as shown in Figure 5.
Embodiment 2：
Step 1：After wafer scale GaN device 3 completes positive technique, in disk surfaces spin coating light sensitivity BCB4, rotating speed setting
For 1000rpm, time 1min；GaN device disk is placed on heat baking on hot plate, removes BCB glue internal solvents, heat is dried temperature and kept
At 100 DEG C, BCB glue can not remove after the completion of preventing high temperature BCB solidifications from leading to transfer.Fig. 1 is wafer schematic cross-section before bonding,
Fig. 2 is that GaN device completes positive technique rear surface spin coating light sensitivity BCB cross-sectional views.
Step 2：Remove the SiC substrate or Si substrates of heteroepitaxial growth GaN；
Step 3：Standard RCA clean is used to the GaN device disk 3 after Si wafers 1 and removal substrate.Specific further includes working as
(it is typically larger than 2nm) when the roughness of crystal column surface is larger, generally requires and carry out surface chemical mechanical polishing polishing treatment, make it
The demand that surface roughness reaches suitable bonding chip is usually less than (1nm).
Step 4：Plasma-activated, N is carried out to the back side of wafer scale GaN device 32The gas flow of plasma 5 is
100sccm, activation power are 250W, soak time 30s.
Step 5：Equal ex vivo activations, O are carried out to 1 surface of Si wafers26 gas flow of plasma is 100sccm, activates work(
Rate 250W, soak time 30s.
Step 6：Two disks are put into DIW (deionized water), surface is in contact with each other, slight amount, as shown in Figure 4.
Step 7：Two wafers, which are put into bonder, makes its bonding, and in this step, the bonding pressure used is 500Kg, key
It is 400 DEG C to close temperature, and bonder cavity is N2Atmosphere, time 1h；Sectional view as shown in Figure 5 after bonding.
Step 8：Bonding pad is put into annealing furnace, 150 DEG C of annealing temperature, annealing time 60min.
Step 9：Wafer exposure development dissolving light sensitivity BCB4 after annealing, developer temperatur are 60 DEG C, developing time
15min；Post-development wafer sectional view is as shown in Figure 5.
It should be understood that the foregoing is merely the specific implementation mode of the present invention, it is not intended to restrict the invention,
All within the spirits and principles of the present invention, any modification, equivalent substitution, improvement and etc. done should be included in the present invention's
Within protection domain.
Claims (10)
1. a kind of wafer scale GaN device substrate transfer method, which is characterized in that include the following steps：
(1) the surface covering protection supporting layer after positive technique is completed to wafer scale GaN device；
(2) initial substrates of GaN device are removed；
(3) back side of GaN device and Si substrate surfaces to be transferred are cleaned；
(4) N is carried out to the back side of GaN device2Gas corona treatment；
(5) O is carried out to the crystal column surface of Si substrates to be transferred2Gas corona treatment；
(6) wafer of GaN device and Si substrates is put into ammonia spirit and is bonded in advance；
(7) by the sample after pre- bonding in N2Apply pressure under environment to be bonded；
(8) wafer after para-linkage carries out process annealing processing；
(9) the protection supporting layer of the crystal column surface after process annealing is removed.
2. requiring the wafer scale GaN device substrate transfer method according to right 1, which is characterized in that described in step (1)
GaN device is GaN HEMT devices, GaN HBT devices, and the protection supporting layer is photosensitive BCB, and thickness is more than 30 μm.
3. requiring the wafer scale GaN device substrate transfer method according to right 2, which is characterized in that in the complete light sensitivity of spin coating
After BCB, it is placed on the baking of tablet heat, heat dries 100 DEG C~200 DEG C of temperature, and heat dries time 100s~200s.
4. requiring the wafer scale GaN device substrate transfer method according to right 1, which is characterized in that the table described in step (3)
Face cleaning uses standard RCA clean method, cleans at least 2 times or more, surface roughness ＜ 1nm.
5. requiring the wafer scale GaN device substrate transfer method according to right 1, which is characterized in that step (4) is to wafer scale
The GaN device back side carries out plasma-activated process conditions：N2 gas gas flows are 60sccm, and activation power is 200W,
Soak time 30s.
6. requiring the wafer scale GaN device substrate transfer method according to right 1, which is characterized in that step (5) is to Si wafers
The process conditions that surface carries out equal ex vivo activations are：O2Gas gas flow is 60sccm, activates power 100W, soak time 30s.
7. requiring the wafer scale GaN device substrate transfer method according to right 1, which is characterized in that step (6) described ammonium hydroxide
Solution concentration is 10%~40%, and temperature is 30 DEG C~60 DEG C.
8. requiring the wafer scale GaN device substrate transfer method according to right 1, which is characterized in that the N described in step (7)2
Compression ring border is bonder cavity environment, and bonding pressure is 100Kg~500Kg, and 100 DEG C~200 DEG C of bonding temperature, bonding time is
0.5h~3h.
9. requiring the wafer scale GaN device substrate transfer method according to right 1, which is characterized in that low described in step (8)
Warm annealing temperature is 100 DEG C~200 DEG C, annealing time 10min~60min.
10. requiring the wafer scale GaN device substrate transfer method according to right 1, which is characterized in that step (9) will anneal
The protection supporting layer on dissolving removal surface in developer solution, the time of the development are put into after wafer exposure afterwards：5min~
15min, temperature：50 DEG C~100 DEG C.
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109616404A (en) * | 2018-12-26 | 2019-04-12 | 中芯集成电路（宁波）有限公司 | The surface treatment method of Shooting Technique is carried out for device wafers |
| CN109786229A (en) * | 2018-12-05 | 2019-05-21 | 中北大学 | A kind of wafer bonding method and the method for corresponding foreign substrate preparation |
| CN109904064A (en) * | 2019-01-21 | 2019-06-18 | 中国航空工业集团公司北京长城航空测控技术研究所 | A method of improving carbonization Si direct bonding intensity |
| CN111223810A (en) * | 2018-11-27 | 2020-06-02 | 中科院微电子研究所昆山分所 | Wafer bonding pressurizing device, wafer bonding method and wafer bonding equipment |
| CN113072037A (en) * | 2021-03-26 | 2021-07-06 | 电子科技大学 | Method for improving BCB bonding of glass substrate through surface plasma activation |
| CN113421849A (en) * | 2021-06-09 | 2021-09-21 | 中环领先半导体材料有限公司 | Preparation process of silicon substrate with insulating buried layer |
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| JPS58103131A (en) * | 1981-12-15 | 1983-06-20 | Nec Corp | Manufacture of compound semiconductor device |
| CN103832970A (en) * | 2012-11-27 | 2014-06-04 | 中国科学院微电子研究所 | Low-temperature wafer bonding method |
| CN106783645A (en) * | 2016-11-29 | 2017-05-31 | 东莞市广信知识产权服务有限公司 | A kind of method of diamond and GaN wafer Direct Bondings |
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| JPS58103131A (en) * | 1981-12-15 | 1983-06-20 | Nec Corp | Manufacture of compound semiconductor device |
| CN103832970A (en) * | 2012-11-27 | 2014-06-04 | 中国科学院微电子研究所 | Low-temperature wafer bonding method |
| CN106783645A (en) * | 2016-11-29 | 2017-05-31 | 东莞市广信知识产权服务有限公司 | A kind of method of diamond and GaN wafer Direct Bondings |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111223810A (en) * | 2018-11-27 | 2020-06-02 | 中科院微电子研究所昆山分所 | Wafer bonding pressurizing device, wafer bonding method and wafer bonding equipment |
| CN109786229A (en) * | 2018-12-05 | 2019-05-21 | 中北大学 | A kind of wafer bonding method and the method for corresponding foreign substrate preparation |
| CN109616404A (en) * | 2018-12-26 | 2019-04-12 | 中芯集成电路（宁波）有限公司 | The surface treatment method of Shooting Technique is carried out for device wafers |
| CN109904064A (en) * | 2019-01-21 | 2019-06-18 | 中国航空工业集团公司北京长城航空测控技术研究所 | A method of improving carbonization Si direct bonding intensity |
| CN113072037A (en) * | 2021-03-26 | 2021-07-06 | 电子科技大学 | Method for improving BCB bonding of glass substrate through surface plasma activation |
| CN113072037B (en) * | 2021-03-26 | 2023-10-31 | 电子科技大学 | Method for improving BCB bonding of glass substrate by surface plasma activation |
| CN113421849A (en) * | 2021-06-09 | 2021-09-21 | 中环领先半导体材料有限公司 | Preparation process of silicon substrate with insulating buried layer |
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| CN108288582B (en) | 2020-12-01 |
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