CN108288567A - Relay - Google Patents
Relay Download PDFInfo
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- CN108288567A CN108288567A CN201810196320.7A CN201810196320A CN108288567A CN 108288567 A CN108288567 A CN 108288567A CN 201810196320 A CN201810196320 A CN 201810196320A CN 108288567 A CN108288567 A CN 108288567A
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- Prior art keywords
- substrate
- support
- support plate
- conductive layer
- actuating structure
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H59/00—Electrostatic relays; Electro-adhesion relays
- H01H59/0009—Electrostatic relays; Electro-adhesion relays making use of micromechanics
Abstract
The application provides a kind of relay, including substrate, the stationary contact for being set to substrate surface, actuating structure, supporter, the second conductive layer.Actuating structure is arranged with substrate separation.Movable contact that actuating structure includes support plate, is set to support plate and is at least partly laminated with stationary contact, two support arms being connect with support plate and the first conductive layer for being set to support arm, two support arm intervals settings.Supporter is fixedly installed on substrate surface, and two one end of support arm far from support plate are by support body supports, so that actuating structure is arranged with substrate separation.Second conductive layer is set to surface of the substrate close to actuating structure, and is at least partly laminated with support plate.
Description
Technical field
This application involves field of semiconductor devices, more particularly to a kind of relay.
Background technology
The development of MEMS (Microelectromechanical Systems, MEMS) technology promotes traditional machine
The micromation of electric system with it is integrated.Relay is as a kind of electrical equipment with circuit control function, in industrial production, boat
The fields such as empty space flight, daily life and national defense and military have a wide range of applications.And as modern electrical system is small to electronic device
Type, integrated requirement raising, the micromation of relay is one of the main trend of its development.
According to the difference of type of drive, MEMS relay can be divided into：Electrostatic, electromagnetic type, electroheating type, piezo-electric type etc..
Different driving mode has the characteristics that its respectively.But traditional relay cannot be guaranteed while driving force is big using lower
Driving voltage and energy consumption.
Invention content
Based on this, it is necessary to for the big problem of traditional relay driving voltage, provide a kind of relay.
A kind of relay, including：
Substrate；
Stationary contact is set to the surface of the substrate；
Actuating structure, is arranged with the substrate separation, and the actuating structure includes support plate, connect with the support plate
Two support arms and the first conductive layer for being set to the support arm, described two support arm interval settings；
Movable contact, is set to the support plate, and the movable contact is at least partly laminated with the stationary contact；
Supporter, is fixedly installed on the substrate surface, and the one end of described two support arms far from the support plate passes through
The support body supports, so that the actuating structure is arranged with the substrate separation；
Second conductive layer is set to the substrate close to the surface of the actuating structure, and with the support plate at least portion
Layering is folded.
The support plate is laminated completely with second conductive layer in one of the embodiments,.
The stationary contact protrudes from the substrate surface in one of the embodiments, and the movable contact is set to described
Support plate is close to the surface of substrate, and close end of the support plate far from described two support arms.
The quantity of the stationary contact is two in one of the embodiments, and interval is disposed adjacent, when the actuating is tied
When structure bending is close to the substrate, the movable contact and described two stationary contact point contacts.
The stationary contact is set to the one end of the substrate far from the supporter in one of the embodiments,.
First conductive layer is set to surface of the support arm far from the substrate in one of the embodiments,
And the coefficient of thermal expansion of first conductive layer is more than the coefficient of thermal expansion of the support arm.
In one of the embodiments, the supporter be two and interval setting, and respectively with described two support arms
One end be fixedly connected.
Each supporter includes in one of the embodiments,：
First support portion is fixedly connected with a support arm；
Second support portion is located between the substrate and first support portion, and with the substrate and described first
Support portion is fixedly connected.
The relay further includes power part in one of the embodiments, and the power part is set to the substrate table
Face is simultaneously contacted with first support portion.
The relay further includes insulating layer in one of the embodiments, is set to the movable contact and the support
Between plate.
The relay provided by the present application, including substrate, stationary contact, actuating structure, support plate, two support arms,
One conductive layer, movable contact, supporter and the second conductive layer.Using actuating structure by curved under electrothermal drive, the branch is recycled
Static-electronic driving actuating structure and substrate between fagging and second conductive layer further to.To make to be located at support plate
Movable contact and positioned at the second conductive layer stationary contact point contact and be kept in contact, achieve the purpose that energization.It will support in the application
Plate and with the second conductive layer respectively as the positive/negative plate of electrostatic drive, advantageously reduce driving voltage.Two kinds of type of drive
Combination drive mode reduces driving voltage, reduces energy consumption.
Description of the drawings
Fig. 1 is the structural schematic diagram for the relay that one embodiment of the application provides；
Fig. 2 is schematic top plan view of the actuating structure close to the surface of substrate for the relay that one embodiment of the application provides；
The preparation flow schematic diagram of first stage in the preparation method for the relay that Fig. 3 provides for one embodiment of the application；
The preparation flow schematic diagram of second stage in the preparation method for the relay that Fig. 4 provides for one embodiment of the application；
The preparation flow schematic diagram of phase III in the preparation method for the relay that Fig. 5 provides for one embodiment of the application.
Label declaration：
10 relays
100 substrates
110 power parts
120 stationary contacts
200 actuating structures
201 silicon chips
210 support plates
212 movable contacts
220 support arms
230 first conductive layers
300 supporters
310 first support portions
320 second support portions
400 second conductive layers
500 insulating layers
Specific implementation mode
In order to make the above objects, features, and advantages of the present application more apparent, below in conjunction with the accompanying drawings to the application
Specific implementation mode be described in detail.Many details are elaborated in the following description in order to fully understand this Shen
Please.But the application can be much to implement different from other manner described here, those skilled in the art can be not
Similar improvement is done in the case of violating the application intension, therefore the application is not limited by following public specific implementation.
It should be noted that when element is referred to as " being fixed on " another element, it can be directly on another element
Or there may also be elements placed in the middle.When an element is considered as " connection " another element, it can be directly connected to
To another element or it may be simultaneously present centering elements.
Unless otherwise defined, all of technologies and scientific terms used here by the article and belong to the technical field of the application
The normally understood meaning of technical staff is identical.The term used in the description of the present application is intended merely to description tool herein
The purpose of the embodiment of body, it is not intended that in limitation the application.Term " and or " used herein includes one or more phases
Any and all combinations of the Listed Items of pass.
Refer to Fig. 1, the embodiment of the present application provides a kind of relay 10 comprising substrate 100, stationary contact 120, actuating knot
Structure 200, support plate 210,212, two support arms 220 of movable contact, the first conductive layer 230, supporter 300 and the second conductive layer
400.The actuating structure 200 is arranged with the interval of the substrate 100.
The stationary contact 120 is set to 100 surface of the substrate.The actuating structure 200 include the support plate 210,
The movable contact 212, described two support arms 220 and first conductive layer 230.The interval of described two support arms 220 is set
It sets.The movable contact 212 is set to the support plate 210 and is at least partly laminated with the stationary contact 120.Described two supports
Arm 220 is connect with the support plate 210.The supporter 300 is fixedly installed on 100 surface of the substrate.Described two supports
The one end of arm 220 far from the support plate 210 is supported by the supporter 300, so that the actuating structure 200 and institute
State the setting of the interval of substrate 100.First conductive layer 230 is set to described two support arms 220.Second conductive layer 400
The substrate 100 is set to close to the surface of the actuating structure 200, and is at least partly laminated with the support plate 210.
The material of the substrate 100 is unlimited, and insulating materials, which may be used, can also use conductive material, as long as can keep
Shape.When the substrate 100 is insulating materials, can be arranged between second conductive layer 400 and the substrate 100
One layer insulating 500.It is glass in the material of one embodiment, the substrate 100.
The actuating structure 200 can be bent under electrothermal drive, to close to the substrate 100.The actuating structure
200 can be conductive material, such as silica-base material or semi-conducting material.In one embodiment, the actuating structure 200 can
Think monocrystalline silicon.In one embodiment, can be structure as a whole can also split settings for the actuating structure 200.Described two
The setting of the interval of a support arm 220.Described two support arms 220 can be arranged in parallel, and can not also be arranged in parallel.Implement at one
In example, described two support arms 220 form a U-shaped with the support plate 210.
In one embodiment, the supporter 300 can be integrally formed with the actuating structure 200 be arranged to one it is whole
Body structure.The supporter 300 can give the actuating structure 200 to provide support, so that the actuating structure 200 and institute
State the setting of the interval of substrate 100.In one embodiment, the actuating structure 200 is parallel with the substrate 100.
First conductive layer 230 can be strip, and cover the support arm 220.In one embodiment, described
The shape of first conductive layer 230 is " door " shape, and the shape of the support arm 220 is identical as first conductive layer 230.At one
In embodiment, described two support arms 220 are two strips, and first conductive layer 230 covers 220 shape of described two support arms
At the first conductive bar and the second conductive bar, and the end set being connect with the support plate 210 in described two support arms 220 has
Third conductive bar, the third conductive bar is for connecting first conductive bar and second conductive bar.In one embodiment
In, described two support arms 220 have connection strap in the end set being connect with the support plate 210, described two for connecting
Support arm 220.The support plate 210 is connected to the connection strap.The third conductive bar is covered in the connection strap far from institute
State the surface of substrate 100.In one embodiment, the third conductive bar of first conductive layer 230 is set to the support plate
210 surfaces far from the substrate 100 meet the both ends making alive Vt when the support arm 220 or first conductive layer 230
When the condition that can be formed into a loop.
First conductive layer 230 is set to the surface of described two support arms 220.First conductive layer 230 can be with
The table far from the substrate 100 can also be set to by being set to surface of the described two support arms 220 towards the substrate 100
Face.The material of first conductive layer 230 is unlimited, as long as can ensure conductive and coefficient of thermal expansion and the support arm 220
Difference.In one embodiment, first conductive layer 230 is metal.For example, first conductive layer 230 can select
Use metallic nickel.
The shape and area of second conductive layer 400 are unlimited, can be arbitrarily arranged according to actual demand.Described second leads
Electric layer 400 is at least partly laminated with the support plate 210, and at least partly stacking refers to the support plate 210 in the base
Projection on bottom 100 has the part overlapped with second conductive layer 400.
The movable contact 212 is at least partly laminated with the stationary contact 120, i.e., the movable contact 212 is in the substrate 100
On projection at least partly overlapped with the stationary contact 120.When the movable contact 212 and the stationary contact 120 contact, it is described after
Electric appliance 10 is in energized state.When the movable contact 212 and the stationary contact 120 disconnect contact, the relay 10 is in disconnected
Electricity condition.The movable contact 212 and the stationary contact 120 are conductive material.In one embodiment, the movable contact 212 with
The stationary contact 120 is metal material.The making alive Ve between second conductive layer 400 and the support plate 210, described
Two conductive layers 400 and electrode plate of the support plate 210 as electrostatic drive, make institute using the electrostatic attraction between positive/negative plate
It is close to the substrate 100 to state actuating structure 200.Under electrostatic drive, when 100 foot of the actuating structure 200 and the substrate
It is enough close to when, the movable contact 212 can be contacted with the stationary contact 120, and when power-off, the actuating structure 200 automatically springed open,
The movable contact 212 is detached with the stationary contact 120, to realize switching function.
In the present embodiment, electrothermal drive voltage Vt is first applied to the support arm 220 to connect with the supporter 300
Two endpoints make the actuating structure 200 by curved under electrothermal drive, make the movable contact when the actuating structure 200 is bent to
212 and the contact of the stationary contact 120 or very close to when, then between second conductive layer 400 and the support plate 210 plus quiet
Drive voltages Ve utilizes actuating structure described in the static-electronic driving between the support plate 210 and second conductive layer 400
200 and the substrate 100 further to, to make the movable contact 212 and the stationary contact 120 contact and be kept in contact,
Achieve the purpose that energization.In the application just using the support plate 210 and second conductive layer 400 as electrostatic drive
Negative plate advantageously reduces driving voltage.The combination drive mode of two kinds of type of drive reduces driving voltage, reduces energy
Consumption.
In one embodiment, the support plate 210 is laminated completely with second conductive layer 400.The support plate 210
Projection in the substrate 100 is completely superposed with second conductive layer 400, the area of the opposite pole plate of electrostatic drive at this time
Maximum is conducive to reduce driving voltage.
In one embodiment, the stationary contact 120 protrudes from 100 surface of the substrate, and the movable contact 212 is set to
The support plate 210 is close to the surface of substrate 100, and close 210 end far from described two support arms 220 of the support plate
Portion.In one embodiment, the stationary contact 120 protrudes from 100 surface of the substrateThe movable contact 212
The support plate 210 is protruded from close to the surface of substrate 100In the present embodiment, the stationary contact 120 is convex
The support plate 210 is protruded from close to the surface of substrate 100 for 100 surface of the substrate and the movable contact 212, is made described
Movable contact 212 and the stationary contact 120 are easier to contact, and second conductive layer 400 is avoided to be contactd by mistake with the support plate 210
Lead to short circuit.
In one embodiment, the quantity of the stationary contact 120 is two and interval is disposed adjacent, when the actuating structure
When 200 bendings are close to the substrate 100, the movable contact 212 is contacted with described two stationary contacts 120.The movable contact 212 exists
Projection in the substrate 100 has the part overlapped with two stationary contacts 120.The connection load of described two stationary contacts 120, institute
When stating movable contact 212 and described two stationary contacts 120 and contacting, make current lead-through between described two stationary contacts 120.In another reality
It applies in example, the combination of described two stationary contacts 120 and the movable contact 212 can have side by side multiple, so that control is more simultaneously
A load works together.In the present embodiment, the stationary contact 120 is set as adjacent two, and described two stationary contacts 120 are used in combination
Connection load can facilitate the connection of circuit and the use of the relay 10.
In one embodiment, the stationary contact 120 is set to the one end of the substrate 100 far from the supporter 300.
The stationary contact 120 can be set to 100 surface any position of the substrate, as long as when the actuating structure 200 is close to described
When substrate 100, the movable contact 212 can be contacted with the stationary contact 120, and the support plate 210 is led with described second
Electric layer 400 will not short circuit.
In the present embodiment, the stationary contact 120 is set to the one end of the substrate 100 far from the supporter 300, then
The position of the movable contact 212 can also be set to the actuating structure 200 far from the support relative to the stationary contact 120
One end of body 300.When so that the actuating structure 200 moving, the displacement distance of the movable contact 120 is maximum, can use most
Small driving voltage reaches maximum driving distance.When the actuating structure 200 is close to the substrate 100, the movable contact
212 and the stationary contact 120 can contact at first, convenient for reduce driving voltage；When the actuating structure 200 is far from the substrate
When 100, the movable contact 212 and the stationary contact 120 can detach at first, prevent the movable contact 212 and the stationary contact
120 generate adhesion.
In one embodiment, first conductive layer 230 is set to the support arm 220 far from the substrate 100
Surface.The coefficient of thermal expansion of first conductive layer 230 is more than the coefficient of thermal expansion of the support arm 220.The support arm 220
It is fixedly connected with first conductive layer 230.In one embodiment, first conductive layer 230 is for the ease of conduction, can be with
For at least one layer of metal.For the ease of conduction, the voltage Vt of the electrothermal drive can also be added in first conductive layer 230
Both ends.In the present embodiment, first conductive layer 230 is set to surface of the support arm 220 far from the substrate 100,
The metal that first conductive layer 230 can select coefficient of thermal expansion larger is more convenient the making of the relay 10, also favorably
In reducing cost.
In one embodiment, the supporter 300 be two and interval setting, and respectively with described two support arms
220 one end is fixedly connected.Each described supporter 300 is fixedly connected with the end of a support arm 220 respectively.At one
In embodiment, described two supporters 300 can be integrally formed with the actuating structure 200 and be set as an entirety.In this reality
It applies in example, the supporter 300 is set as two and interval setting, facilitates voltage Vt when carrying out electrothermal drive that can directly act on
The support arm 220 and first conductive layer 230.
In one embodiment, each supporter 300 includes the first support portion 310 and the second support portion 320.One
First support portion 310 is fixedly connected with a support arm 220.Second support portion 320 is located in the substrate
Between 100 and first support portion 310, and it is fixedly connected with the substrate 100 and first support portion 310.At one
In embodiment, first support portion 310 and the actuating structure 200, which can be integrally formed, is set as an entirety, and described the
Two support portions 320 and the substrate 100, which can be integrally formed, is set as an entirety.In the present embodiment, the supporter 300
It is set as first support portion 310 to be fixedly connected with second support portion 320, the making of the relay 10 can be made more
Add conveniently.
In one embodiment, the relay 10 further includes power part 110, be set to 100 surface of the substrate and with
First support portion 310 contacts.The power part 110 is for making 400 electricity of the actuating structure 200 and second conductive layer
Connection.In one embodiment, the power part 110 is set between described two supporters 300 and to far from the stationary contact
The direction extension of point 120, convenient for connection electric wire.In one embodiment, the power part 110 can select metal, just
In conduction.In the present embodiment, the power part 110 is set, can be more convenient 100 surface of the substrate increase lead in order to
Apply electrostatic drive voltage Ve between the power part 110 and second conductive layer 400.
In one embodiment, the relay 10 further includes insulating layer 500.The insulating layer 500 is set to described dynamic
Between contact 212 and the support plate 210.The insulating layer 500 is for preventing the movable contact 212 and the support plate 210
Electrical contact is generated, the normal work of the relay 10 is influenced.
One embodiment of the application also provides a kind of preparation method making relay 10 of MEMS technology, the substrate 100
Using glass, the actuating structure 200 uses silicon chip 201, includes the following steps：
Fig. 3 is referred to, the first stage carries out process to sheet glass：
S100 provides the sheet glass of 500 μ m thicks, is cleaned using RCA cleaning machines, spare after drying；
S110, first time photoetching, in 1.4 μm of the positive photoresist AZ5214 and thickness of 2.8 μm of the glass sheet surface smearing thickness
LOR, with dry etching or KOH wet etchingsStep spends glue removal photoresist, forms institute on the glass sheet
State the second support portion 320；
S120, second of photoetching, in 1.4 μm of the positive photoresist AZ5214 and thickness of 2.8 μm of the glass sheet surface smearing thickness
LOR, splash-proofing sputtering metal layer is totalThickness, 150 DEG C -170 DEG C is heated to the sheet glass, keeps 15min or more,
Then positive photoresist is removed, and is obtained the joint portion 110, second conductive layer 400 and the stationary contact 120, is handled together
Sheet glass afterwards；
Fig. 4 is referred to, second stage handles silicon chip 201：
S200, provides N-type and crystal orientation is<100>, resistivity is the silicon chip 201 of 0.2 Ω of Ω m~0.5 m, clear using RCA
Washing machine is cleaned, spare after drying；
S210, third time photoetching, the positive photoresist AZ5214 for being 1.6 μm in 201 surface smear thickness of the silicon chip use Rapier
Step is etched, etching height is 1.5 μm, spends glue removal photoresist, obtains first support portion 310；
S220, four mask, the positive photoresist AZ5214 for being 2.8 μm in 201 surface smear thickness of the silicon chip use Rapier
Step is etched, etching height is 1.5 μm, spends glue removal photoresist, obtains the groove of 120 position of the stationary contact, be used for
Place the material of the movable contact 212；
S240, in 201 surface heat oxide growth SiO of the silicon chip2Mask, SiO2Thickness be
S250, the 5th photoetching, the SiO in the groove of 120 position of the stationary contact2Mask surface smearing thickness is
2.8 μm of positive photoresist AZ5214；SiO is etched with RIE2Mask, etching depthIt is removed with removing 201 surface of the silicon chip completely
Remove the SiO other than 120 position of the stationary contact2Mask spends glue removal photoresist, obtains having the insulating layer 500
Silicon chip；
S260, the 6th photoetching, the silicon chip surface smearing thickness with the insulating layer 500 be 2.8 μm just
The LOR of glue AZ5214 and 1.4 μ m thicks, splash-proofing sputtering metal layer sputter overall thicknessPositive photoresist is removed, is obtained described dynamic tactile
Point 212 obtains the silicon chip completed with processing together；
Fig. 5, phase III are referred to, the silicon chip and sheet glass completed to processing carry out bonding and subsequent processing：
S300 has the positive photoresist that the one side of movable contact 212 applies 8 μ m thicks to the silicon chip with the movable contact 212
AZP4620 is protected, and carries out hot oxygen processing to silicon chip 201, wet method removes photoresist mask, then by first support portion
310 and second support portion 320 alignment, anode linkage is carried out to the sheet glass obtained after silicon chip 201 and step S120, is obtained
The supporter 300 removes SiO of the silicon chip 201 away from the surface of the sheet glass with BOE rinsings2Mask；
S310, the thickness that the silicon chip 201 is thinned with KOH obtain silicon on glass bonding body to 20 μm；
S320, the 7th photoetching, silicon chip 201 deviates from 1.6 μm of the surface smear of sheet glass in the silicon on glass bonding body
Thick positive photoresist AZ5214, with dry etching silicon slice 201, dry method removes photoresist；
S330, the 8th photoetching, the positive photoresist AZ5214 for being 2.8 μm away from a face smearing thickness of sheet glass in silicon chip 201
With the LOR of 1.4 μ m thicks, the W metal that sputtering thickness is 1 μm, positive photoresist stripping removes photoresist, obtains relay 10.
After testing, electrothermal drive voltage used in the relay 10 prepared by the present embodiment is 1-2V, electrostatic drive electricity
Pressure is 5V.It can be seen that relay 10 provided by the present application can substantially reduce the driving voltage of relay 10, low energy consumption.
In one embodiment, the metal layer sputtered in step S120 and step S260 is by Cr/Au/Pt/Au/Pt/Au's
Sequence sputters successively from front to back, and the thickness of the multiple layer metal of sputtering is：Cr isAu isPt is
Au isPt isAu isThe specific sputtering thickness of multiple layer metal can be according to corruption in step S120
Situation adjustment is lost, as long as ensureing that the overall thickness of Cr/Au/Pt/Au/Pt/Au is higher by glass.Step
The specific sputtering thickness of multiple layer metal can be adjusted according to corrosion condition in S260, as long as ensureing that the multiple layer metal is higher by silicon
Piece 201 is close to the surface of substrate.In one embodiment, it is splashed in step S120 and step S260
Further include annealing process after shooting away metal layer, the multiple layer metal is made to form alloy.Using Cr/Au/Pt/Au/Pt/Au multilayers
For the alloy of metal as the stationary contact 120 and the movable contact 212, resistance is relatively low, more resistant, longer life expectancy.
In one embodiment, the silicon chip 201 can use monocrystalline silicon.The thickness of the silicon chip 201 is unlimited, such as can
Think tens microns to hundreds of microns.In one embodiment, the silicon chip 201 described in step S310 is after being thinned, thickness
It can be 15 μm -20 μm.
In one embodiment, in step S300 SiO is rinsed with BOE2When mask, drift can be crossed to ensure SiO2Mask is complete
Full removal.
In the present embodiment in the preparation method of relay 10, the thickness of each structure in relay 10 can be as needed
Arbitrary adjusting is carried out, as long as ensureing the movable contact 212 of the relay 10 at a distance from the stationary contact 120 in 1 μm of -4 μ
M.
Each technical characteristic of embodiment described above can be combined arbitrarily, to keep description succinct, not to above-mentioned reality
It applies all possible combination of each technical characteristic in example to be all described, as long as however, the combination of these technical characteristics is not deposited
In contradiction, it is all considered to be the range of this specification record.
The several embodiments of the application above described embodiment only expresses, the description thereof is more specific and detailed, but simultaneously
Cannot the limitation to the application the scope of the claims therefore be interpreted as.It should be pointed out that for those of ordinary skill in the art
For, under the premise of not departing from the application design, various modifications and improvements can be made, these belong to the guarantor of the application
Protect range.Therefore, the protection domain of the application patent should be determined by the appended claims.
Claims (10)
1. a kind of relay, which is characterized in that including：
Substrate (100)；
Stationary contact (120), is set to the surface of the substrate (100)；
Actuating structure (200), with the substrate (100) be spaced be arranged, the actuating structure (200) include support plate (210), with
Two support arms (220) of support plate (210) connection and the first conductive layer for being set to the support arm (220)
(230), described two support arm (220) intervals setting；
Movable contact (212) is set to the support plate (210), the movable contact (212) and the stationary contact (120) at least portion
Layering is folded；
Supporter (300) is fixedly installed on the substrate (100) surface, and described two support arms (220) are far from the support plate
(210) one end is supported by the supporter (300), so that between the actuating structure (200) and the substrate (100)
Every setting；
Second conductive layer (400), be set to the substrate (100) close to the actuating structure (200) surface, and with the branch
Fagging (210) is at least partly laminated.
2. relay according to claim 1, which is characterized in that the support plate (210) and second conductive layer
(400) stacking completely.
3. relay according to claim 1, which is characterized in that the stationary contact (120) protrudes from the substrate (100)
Surface, the movable contact (212) are set to surface of the support plate (210) close to substrate (100), and close to the support plate
(210) end far from described two support arms (220).
4. relay according to claim 3, which is characterized in that the quantity of the stationary contact (120) is two and is spaced
Be disposed adjacent, when the actuating structure (200) be bent close to the substrate (100) when, the movable contact (212) with it is described two
Stationary contact (120) contacts.
5. relay according to claim 3, which is characterized in that the stationary contact (120) is set to the substrate (100)
One end far from the supporter (300).
6. relay according to claim 1, which is characterized in that first conductive layer (230) is set to the support
Surface of the arm (220) far from the substrate (100), and the coefficient of thermal expansion of first conductive layer (230) is more than the support
The coefficient of thermal expansion of arm (220).
7. relay according to claim 1, which is characterized in that the supporter (300) is two and interval setting, and
It is fixedly connected respectively with one end of described two support arms (220).
8. relay according to claim 7, which is characterized in that each the supporter (300) includes：
First support portion (310) is fixedly connected with a support arm (220)；
Second support portion (320) is located between the substrate (100) and first support portion (310), and with the substrate
(100) it is fixedly connected with first support portion (310).
9. relay according to claim 8, which is characterized in that further include power part (110), be set to the substrate
(100) it surface and is contacted with first support portion (310).
10. relay according to claim 1, which is characterized in that further include insulating layer (500), be set to described dynamic tactile
Between point (212) and the support plate (210).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810196320.7A CN108288567B (en) | 2018-03-09 | 2018-03-09 | Relay |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810196320.7A CN108288567B (en) | 2018-03-09 | 2018-03-09 | Relay |
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| CN108288567A true CN108288567A (en) | 2018-07-17 |
| CN108288567B CN108288567B (en) | 2019-07-09 |
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