CN108259021A - A kind of CMOS broadbands distribution variable band-pass filter - Google Patents
A kind of CMOS broadbands distribution variable band-pass filter Download PDFInfo
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- CN108259021A CN108259021A CN201810023417.8A CN201810023417A CN108259021A CN 108259021 A CN108259021 A CN 108259021A CN 201810023417 A CN201810023417 A CN 201810023417A CN 108259021 A CN108259021 A CN 108259021A
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Abstract
The present invention relates to a kind of CMOS broadbands distribution variable band-pass filter, including：K grades of N channel filtering group modules, distributed inductance module, Serial capacitance Cj modules and load stage circuit module；K grades of N channel filtering group modules are connect respectively with distributed inductance module and Serial capacitance Cj modules, also ground connection and external outer clock circuit；Distributed inductance module is also connect with load stage circuit module；Serial capacitance Cj modules are also grounded, wherein, K is positive integer, and N is positive even numbers.The combination that the present invention passes through K grades of N channel filtering group modules and distributed inductance module, realize it is a kind of based on impedance to be converted to the high variable band-pass filter of higher clock frequency, reduce the operating voltage and power consumption of circuit, in addition, N channel wave filter with Serial capacitance Cj modules is connect, in-band insertion loss is reduced and increases Out-of-band rejection, it is simple in structure, it is easily integrated, is conducive to meet the needs of following receiver complexity and flexibility.
Description
Technical field
The present invention relates to wave filter technology field more particularly to a kind of CMOS broadbands distribution variable band-pass filters.
Background technology
Wave filter has key effect in a wireless communication device, and currently, the linearity is high, Q values are high, tuning range is wide, can
Fully integrated N channel wave filter is the hot spot of research.For the portable equipment of mobile communication, generally using battery powered, it is desirable that
It works under low-voltage, low-power consumption.It studies the impedance operator of N channel wave filter, passband gain, with characteristics such as outer declines, obtains
The circuit model of wave filter solves the input impedance function of wave filter, connects defeated time-domain transmission function, discrete time-domain transfer function
Deng and carrying out noise analysis, emerging on piece N channel wave filter is due to its large-scale frequency tuning range, high q-factor and can
The characteristic of extension and become very attractive.On this basis, consider impedance matching, the parasitism of front end antenna or low noise amplifier
The requirement of capacitance and back-end gain and noise coefficient, what structure can meet a variety of communication standards can substitute surface acoustic wave completely
The High Linear of wave filter (SAWF), high q-factor, broad tuning can integrate N channel wave filter, be one of primary study content.
Invention content
The technical problem to be solved by the present invention is to solve the above shortcomings of the prior art and to provide a kind of distributions of CMOS broadbands
Formula variable band-pass filter.
The technical solution that the present invention solves above-mentioned technical problem is as follows：A kind of CMOS broadbands distribution tunable band-pass filtering
Device, including：K grades of N channel filtering group modules, distributed inductance module, Serial capacitance Cj modules and load stage circuit module；
The K grades of N channel filtering group module connects respectively with the distributed inductance module and the Serial capacitance Cj modules
It connects, also ground connection and external outer clock circuit；
The distributed inductance module is also connect with the load stage circuit module；
The Serial capacitance Cj modules are also grounded；
Wherein, the K is positive integer, and the N is positive even numbers.
The beneficial effects of the invention are as follows：The knot that the present invention passes through K grades of N channel filtering group modules and distributed inductance module
Close, realize it is a kind of based on impedance to be converted to the high variable band-pass filter of higher clock frequency, reduce the work of circuit
Make voltage and power consumption.In addition, N channel wave filter is connect with Serial capacitance Cj modules (parallel parasitic capacitance), reduce in band
Insertion loss simultaneously increases Out-of-band rejection.And because of the regulable center frequency of N channel wave filter, inductance will in distributed inductance module
Carrier deviation, with the change of external clock, the carrier deviation of waveform does not influence wave filter, it is achieved thereby that
The design of the broadband distribution variable band-pass filter of CMOS realizes that center is tunable in 0.4~1.6GHz frequency ranges.It compares
Existing voltage mode RF IC, the variable band-pass filter of the application have higher speed, preferably anti-interference
Property, lower power consumption and more simplified circuit structure, are easily integrated, improve the high frequency response of traditional N channel wave filter, favorably
In meeting the needs of following receiver complexity and flexibility.
Based on the above technical solution, the present invention can also be improved as follows：
Further, the distributed inductance module includes：Sequentially connected radio-frequency voltage source Vin, resistance Rs, capacitance C1,
First inductance L/2, K-1 inductance L and the second inductance L/2；
The capacitance C1, the first inductance L/2 and the K grades of N channel filtering group module are sequentially connected, first electricity
Sense L/2, first inductance L and the K grades of N channel filtering group module are sequentially connected, first inductance L, second
The inductance L and the K grades of N channel filtering group module are sequentially connected, second inductance L, third the inductance L and institute
K grades of N channel filtering group modules are stated to be sequentially connected, and so on, the inductance L, K-1 inductance L of K-2 and described
K grades of N channel filtering group modules are sequentially connected；
The K-1 inductance L, the second inductance L/2 and the load stage circuit module are sequentially connected.
The present invention further advantageous effect be：Since the design of inductor should be enough to generate the interior insertion damage of minimum band
Consumption.Therefore, it is necessary to realize input impedance as pure resistance, inductance of the value for L/2 is respectively connected in input/output terminal, and with electricity
Resistance is connected, and improves Out-of-band rejection, has obtained minimum in-band insertion loss (34dB).In addition, capacitance C1 is by input terminal voltage
Source Vin is accessed, and plays the role of a separated by direct communication, and then connect with inductance L/2, AC signal is introduced circuit, therefore, defeated
The access of input capacitance C1 further filters out the interference of direct current signal.
Further, the Serial capacitance Cj modules include：K capacitance Cj；
The K grades of N channel filtering group module is also grounded by the K capacitance Cj respectively.
The present invention further advantageous effect be：With the increase of NMOS tube switching width, while improving Out-of-band rejection,
In-band insertion loss also increases (since the parasitic capacitance of switch increases).Since the increased pass-band loss related with capacitance Cj is
Approximately, and resulting Out-of-band rejection is limited.Therefore, capacitance Cj is merged into synthesis transmission line by the present embodiment
In, by being of coupled connections for capacitance and K grades of N channel filtering group modules, wave filter is made to respond to obtain significant Out-of-band rejection。
Further, the K grades of N channel filtering group module includes：Pass through the 1st grade of filter of K capacitance Cj ground connection respectively
Wave group to K grades of filtering groups, the K filtering groups are corresponded with the K capacitance Cj；
The capacitance C1, the first inductance L/2 and the 1st grade of filtering group are sequentially connected, the first inductance L/2,
First inductance L and the 2nd grade of filtering group is sequentially connected, first inductance L, second inductance L and the 3rd
The grade filtering group is sequentially connected, and second inductance L, third inductance L and the 4th grade of filtering group connect successively
It connects, and so on, the K-2 inductance L, the K-1 inductance L and the K grades of filtering groups are sequentially connected.
The present invention further advantageous effect be：By distributed inductance module by K grades of N channel filtering group module-cascades,
The coupling of sensing series inductance and K grades of N channel filtering group modules causes variable band-pass filter to obtain further Out-of-band rejection,
Realize it is a kind of based on impedance to be converted to the high variable band-pass filter of higher clock frequency, reduce the work electricity of circuit
Pressure and power consumption.
Further, include per level-one filtering group：N number of first NMOS tube, N number of second NMOS tube and N/2 capacitance Ci, common group
Into N number of channel filtering unit；
In N number of channel filtering unit, the connection mode of difference is used between each two channel filtering unit；
The grid of N number of first NMOS tube and N number of second NMOS tube distinguishes external outer clock circuit；
The source level of N number of first NMOS tube or N number of second NMOS tube inductance corresponding with the grade filtering group respectively
Connection is also grounded by the corresponding capacitance Cj of the grade filtering group respectively；
The drain electrode of N number of second NMOS tube or N number of first NMOS tube is grounded respectively.
The present invention further advantageous effect be：Traditional N channel wave filter is usually interfered by even-order harmonic, relatively low band
Outer inhibition and the relatively narrow limitation of centre frequency adjustable range, therefore, in order to overcome this shortcoming, the present embodiment is proposed using K
The grade cascade mode of N channel filter patterns, MOS therein use the connection mode of differential clocks, it is humorous to eliminate even well
Wave improves its Out-of-band rejection.Compared with the prior art, the present embodiment is simple in structure, and interport isolation is good, and noise coefficient is low, speed
Degree is high.
Further, in the filtering group per level-one,
Each described channel filtering unit includes first NMOS tube, second NMOS tube and one
The capacitance Ci；The source level of the first NMOS tube first inductance L/2 corresponding with a grade filtering group or inductance L
Connection is also grounded, the grounded drain of second NMOS tube by the corresponding capacitance Cj of the grade filtering group；
In first channel filtering unit, the drain electrode of the first NMOS tube passes through first capacitance Ci and the source of the second NMOS tube
Grade connection, in second channel filtering unit, the drain electrode of the first NMOS tube passes through first capacitance Ci and the second NMOS tube
Source level connects；
In third channel filtering unit, the drain electrode of the first NMOS tube passes through second capacitance Ci and the source of the second NMOS tube
Grade connection, in the 4th channel filtering unit, the drain electrode of the first NMOS tube passes through second capacitance Ci and the second NMOS tube
Source level connects；
And so on, in the N-1 channel filtering unit, the drain electrode of the first NMOS tube passes through the N/2 capacitance Ci and
The source level connection of two NMOS tubes, in n-th channel filtering unit, the drain electrode of the first NMOS tube by the N/2 capacitance Ci and
The source level connection of second NMOS tube.
Further, the load stage circuit module includes：The capacitance C2 of interconnection and resistance RL；
The resistance RLOne end connect by the capacitance C2 with one end of the second inductance L/2；
The resistance RLThe other end is grounded.
The present invention further advantageous effect be：It is exported for current intermediate frequency signal to be converted into voltage signal,
Small noise coefficient is realized in the range of regulable center frequency.Capacitance C2 is connected with load end, with load resistance RLIt connects and accesses
Ground wire equally plays the role of separated by direct communication.The access of output capacitor C2 further filters out the interference of direct current signal.So that
Output signal is radio-frequency component, and high frequency performance significantly improves, and then can reach and turn the current signal of N channel wave filter
Change the form output of voltage signal into.
Description of the drawings
Fig. 1 is a kind of structural frames of CMOS broadbands distribution variable band-pass filter provided by one embodiment of the present invention
Figure；
Fig. 2 is a kind of structural representation of CMOS broadbands distribution variable band-pass filter provided by one embodiment of the present invention
Figure；
Fig. 3 is the corresponding regulable center frequency simulation result figures of Fig. 2；
Fig. 4 is the corresponding Out-of-band rejection simulation result figures of Fig. 2；
Fig. 5 is the corresponding noise coefficient simulation result figures of Fig. 2；
It in centre frequency is the analogous diagram at 1GHz that Fig. 6, which is the corresponding in-band insertion loss S11 of Fig. 2,.
In attached drawing, the element representated by each label is listed as follows：
1st, K grades of N channel filtering group modules, 2, distributed inductance module, 3, Serial capacitance Cj modules, 4, load stage circuit mould
Block.
Specific embodiment
The principle and features of the present invention will be described below with reference to the accompanying drawings, and the given examples are served only to explain the present invention, and
It is non-to be used to limit the scope of the present invention.
Embodiment one
A kind of CMOS broadbands distribution variable band-pass filter, as shown in Figure 1, including：K grades of N channel filtering group modules, point
Cloth inductor module, Serial capacitance Cj modules and load stage circuit module.
Wherein, K grades of N channel filtering group modules are connect respectively with distributed inductance module and Serial capacitance Cj modules, are also connect
Ground and external outer clock circuit；Distributed inductance module is also connect with load stage circuit module；Serial capacitance Cj modules are also
Ground connection, K is positive integer, and N is positive even numbers.
In the present embodiment, by distributed inductance module by K grades of N channel filtering group module-cascades, series inductance and K are sensed
The coupling of grade N channel filtering group module causes variable band-pass filter to obtain further Out-of-band rejection, while be that one kind is based on
Impedance reduces the operating voltage and power consumption of circuit to be converted to the high variable band-pass filter of higher clock frequency.Series
Capacitance Cj modules are merged by K grades of N channel filtering group modules in transmission line so that filter response obtain it is significant broadband,
So as to reduce in-band insertion loss and increase Out-of-band rejection, the present embodiment has obtained higher Out-of-band rejection (72dB).Load stage
Circuit module exports for current signal to be converted into voltage signal.
Therefore, the present embodiment realizes one kind by the combination of K grades of N channel filtering group modules and distributed inductance module
Based on impedance to be converted to the high variable band-pass filter of higher clock frequency, the operating voltage and power consumption of circuit are reduced.
In addition, N channel wave filter is connect with Serial capacitance Cj modules (parallel parasitic capacitance), reduce in-band insertion loss and increase
Out-of-band rejection.Again because of the regulable center frequency of N channel wave filter, in distributed inductance module inductance by carrier deviation,
With the change of external clock, the carrier deviation of waveform does not influence wave filter, it is achieved thereby that the broadband of CMOS point
The design of cloth variable band-pass filter realizes that center is tunable in 0.4~1.6GHz frequency ranges.
Embodiment two
On the basis of embodiment one, as shown in Fig. 2, distributed inductance module 2 includes：Sequentially connected radio-frequency voltage source
Vin, resistance Rs, capacitance C1, the first inductance L/2, K-1 inductance L and the second inductance L/2.
Wherein, L/2 and K grades of capacitance C1, the first inductance N channel filtering group modules 1 are sequentially connected, the first inductance L/2, first
A inductance L and K grades of N channel filtering group module is sequentially connected, L and K grades of first inductance L, second inductance N channel filtering group moulds
Block is sequentially connected, and L and K grades of second inductance L, third inductance N channel filtering group modules are sequentially connected, and so on, K-2
L and K grades of a inductance L, the K-1 inductance N channel filtering group modules are sequentially connected；The K-1 inductance L, the second inductance L/2 and negative
Grade circuit module is carried to be sequentially connected.
As shown in Fig. 2, distributed inductance module is included between the 1st grade of N channel filtering group and K grades of N channel filtering groups
Inductance L and the 1st grade of N channel filtering group and the inductance L/2 at K grades of N channel filtering group both ends, specifically, the 1st grade of N channel filter
It is connected between wave group and the 2nd grade of N channel filtering group by inductance L, the 2nd grade of N channel filtering group and 3rd level N channel filtering group
Between connected by inductance L, connected between 3rd level N channel filtering group and the 4th grade of N channel filtering group by inductance L, the 4th grade of N
It is connected between channel filtering group and the 5th grade of N channel filtering group by inductance L, the 5th grade of N channel filtering group and the 6th grade of N channel filter
It is connected between wave group by inductance L, is sequentially connected and is connected to K grades of N channel filtering groups.Two both ends inductance L/2 (the first inductance L/
The 2 and second inductance L/2) and intermediate series inductance L use the connection mode coupled with K grades of N channel filtering group modules, improve band
Outer inhibition.
Since the limited Q values of inductor are directly proportional to in-band insertion loss, the design of inductor should be enough to generate minimum
In-band insertion loss.Therefore, it is necessary to realize input impedance as pure resistance, it is L/2's to be respectively connected to a value in input/output terminal
Inductance, and be connected with resistance, Out-of-band rejection is improved, has obtained minimum in-band insertion loss (34dB).In addition, capacitance C1 by
Input terminal voltage source Vin is accessed, and plays the role of a separated by direct communication, and then connect with inductance L/2, and AC signal is introduced electricity
Road, therefore, the access of input end capacitor C1 further filters out the interference of direct current signal.
Embodiment three
On the basis of embodiment one or embodiment two, as shown in Fig. 2, Serial capacitance Cj modules 3 include：K capacitance Cj.
Wherein, K grades of N channel filtering group modules are also grounded by K capacitance Cj respectively.
With the increase of NMOS tube switching width, while improving Out-of-band rejection, in-band insertion loss also increases (due to opening
The parasitic capacitance of pass increases).Since the increased pass-band loss related with capacitance Cj is approximate, and outside resulting band
Inhibition is limited.Therefore, capacitance Cj is merged into synthesis transmission line by the present embodiment, passes through capacitance and K grades of N channel filtering groups
Module is of coupled connections, and wave filter is made to respond to obtain significant Out-of-band rejection.
Therefore, the K capacitance Cj of the present embodiment reduces in-band insertion loss and increases Out-of-band rejection, and damage is inserted into interior
Consumption S11 is up to 34dB.
Example IV
On the basis of embodiment three, as shown in Fig. 2, K grades of N channel filtering group modules include：Pass through K capacitance Cj respectively
1st grade of filtering group of ground connection to K grades of filtering groups, K filtering group is corresponded with K capacitance Cj.Capacitance C1, the first inductance L/
2 and the 1st grades of filtering groups are sequentially connected, and the first inductance L/2, first inductance L and the 2nd grade of filtering group are sequentially connected, first electricity
Sense L, second inductance L and 3rd level filtering group are sequentially connected, and second inductance L, third inductance L and the 4th grade of filtering group are successively
Connection, and so on, the K-2 inductance L, the K-1 inductance L and K grades of filtering groups are sequentially connected.
Embodiment five
On the basis of example IV, as shown in Fig. 2, including per level-one filtering group：N number of first NMOS tube, N number of second
NMOS tube and N/2 capacitance Ci, form N number of channel filtering unit altogether；In N number of channel filtering unit, each two channel filtering list
The connection mode of difference is used between member；
The grid of N number of first NMOS tube and N number of second NMOS tube distinguishes external outer clock circuit；N number of first NMOS tube
Or first inductance L/2 corresponding with the grade filtering group or the inductance L connection respectively of the source level of N number of second NMOS tube, also distinguish
Pass through the corresponding capacitance Cj ground connection of the grade filtering group；The drain electrode of N number of second NMOS tube or N number of first NMOS tube is grounded respectively.
Preferably, as shown in Fig. 2, in per level-one filtering group, each channel filtering unit include first NMOS tube,
One the second NMOS tube and a capacitance Ci；The source level of first NMOS tube first inductance L/2 corresponding with the grade filtering group or
One inductance L connection is also grounded, the grounded drain of second NMOS tube by the corresponding capacitance Cj of the grade filtering group；First
In channel filtering unit, the drain electrode of the first NMOS tube is connect by first capacitance Ci with the source level of the second NMOS tube, second
In channel filtering unit, the drain electrode of the first NMOS tube is connect by first capacitance Ci with the source level of the second NMOS tube；Third
In a channel filtering unit, the drain electrode of the first NMOS tube is connect by second capacitance Ci with the source level of the second NMOS tube, and the 4th
In a channel filtering unit, the drain electrode of the first NMOS tube is connect by second capacitance Ci with the source level of the second NMOS tube；According to
Secondary to analogize, in the N-1 channel filtering unit, the drain electrode of the first NMOS tube passes through the N/2 capacitance Ci and the second NMOS tube
Source level connects, and in n-th channel filtering unit, the drain electrode of the first NMOS tube passes through the N/2 capacitance Ci and the second NMOS tube
Source level connection.
Traditional N channel wave filter is usually interfered by even-order harmonic, relatively low Out-of-band rejection and centre frequency adjustable range
Relatively narrow limitation, therefore, in order to overcome this shortcoming, the present embodiment is proposed using the K grades of cascade sides of N channel filter patterns
Formula, MOS therein use the connection mode of differential clocks, eliminate even-order harmonic well, improve its Out-of-band rejection.Relatively
The prior art, the present embodiment is simple in structure, and interport isolation is good, and noise coefficient is low, and speed is high.
Embodiment six
In embodiment two to embodiment five on the basis of any embodiment, as shown in Fig. 2, load stage circuit module 4 wraps
It includes：The capacitance C2 of interconnection and resistance RL。
Wherein, resistance RLOne end connect by capacitance C2 with one end of the second inductance L/2；Resistance RLThe other end is grounded.
It is exported for current intermediate frequency signal to be converted into voltage signal, as shown in figure 5, in regulable center frequency range
It is interior to realize small noise coefficient.
Capacitance C2 is connected with load end, with load resistance RLIt connects and accesses ground wire, equally play the role of separated by direct communication.
The access of output capacitor C2 further filters out the interference of direct current signal.
So that output signal is radio-frequency component, and high frequency performance significantly improves, and then can reach N channel wave filter
Current signal be converted into voltage signal form output.
For example, as shown in Fig. 2, K grades of N channel filtering group modules 1 include the 1st grade of filtering group to K grades of filtering groups.Per level-one
Filtering group is made of NMOS tube S1~NMOS tube SN and N/2 capacitance Ci.It should be noted that in every level-one filtering group, often
The label of one NMOS tube is for representing two NMOS tubes, the first NMOS tube of representative positioned at the left side, the representative the positioned at the right
Two NMOS tubes, in Fig. 2, in the filtering group of the 1st grade of the left side, NMOS tube " S1 " is respectively used to represent " the first NMOS tube S1 " and " the
Two NMOS tube S1 ", the first NMOS tube S1 are the NMOS tube " S1 " for being located at the left side in the 1st grade of filtering group, and the second NMOS tube S1 is
It is located in 1st grade of filtering group " the NMOS tube S1 " on the right.Likewise, in Fig. 2, in the filtering group of the 1st grade of the left side, NMOS tube " SN/
For 2+1 " for representing " the first NMOS tube SN/2+1 " and " the second NMOS tube SN/2+1 ", " the first NMOS tube SN/2+1 " is the 1st
It is located in grade filtering group " the NMOS tube SN/2+1 " on the left side, " the second NMOS tube SN/2+1 " is is located at the right side in the 1st grade of filtering group
" the NMOS tube SN/2+1 " on side.
The first " the first NMOS tube S1 " and " the first NMOS tube SN/2+1 " i.e. respectively above-mentioned NMOS tube, " the 2nd NMOS
Pipe S1 " and " the second NMOS tube SN/2+1 " are respectively the second above-mentioned NMOS tube.
" the first NMOS tube S1 ", " the second NMOS tube S1 " and first capacitance Ci form first channel filtering unit, " the
One NMOS tube SN/2+1 ", " the second NMOS tube SN/2+1 " and first capacitance Ci second channel filtering unit of composition, first
Channel filtering unit and second channel filtering unit use the connection mode of difference, i.e. in first channel filtering unit
The drain electrode of " the first NMOS tube S1 " is connect by first capacitance Ci with the source level of " the second NMOS tube S1 ", second channel filtering
The drain electrode of " the first NMOS tube SN/2+1 " in unit passes through first capacitance Ci and the source level of " the second NMOS tube SN/2+1 "
Connection.Third channel filter unit is to the label meaning of N channel filter unit and the company of two neighboring channel filtering unit
Relationship is connect with above-mentioned first passage filter unit and second channel filter unit.
The grid of NMOS tube S1~NMOS tube SN is connected with the output signal of external clock (being provided by outside), clock
High level causes switching tube to be connected, and low level is kept it turned off.
Specifically, the simple connection mode (i.e. NMOS tube S1~NMOS tube SN and the electricity that are coupled using capacitance and NMOS switch
Hold the connection of Ci using the structure of coupling), and NMOS switch pipe uses the connection mode of differential clocks, the grid of NMOS switch pipe
S1~SN is connect with external difference clock.Grid S1~SN of NMOS switch pipe accesses local oscillator by external differential clocks to be believed
Number, NMOS switch pipe cross-conduction, S1~SN/2 is connected within the preceding T/2 period, and SN/2+1~SN is led within the rear T/2 period
It is logical, when S1~SN/2 is connected, the harmonic wave of a positive can be generated, when SN/2+1~SN is connected, one can be generated
The harmonic wave of a reverse phase, positive reverse phase harmonic wave are cancelled out each other, and so as to eliminate the interference of even-order harmonic generation, improve Out-of-band rejection
Performance so that regulable center frequency range reaches 0.4~1.6GHz.
In addition, source level and inductance and external input device that filtering groups at different levels pass through the first NMOS tube and the second NMOS tube
Connection accesses radio-frequency voltage, by capacitance and inductance, radio-frequency voltage is converted into radio-frequency current so that wave filter obtains preferable
Out-of-band rejection (72dB).
Traditional N channel wave filter is usually interfered by even-order harmonic, relatively low Out-of-band rejection and centre frequency adjustable range
Relatively narrow limitation, therefore, in order to overcome this shortcoming, the present embodiment is proposed using the K grades of cascade sides of N channel filter patterns
Formula, MOS therein use the connection mode of differential clocks, eliminate even-order harmonic well, improve its Out-of-band rejection.Relatively
The prior art, the present embodiment is simple in structure, and interport isolation is good, and noise coefficient is low, and speed is high.
In above-described embodiment two to embodiment seven, inductance of the value for L/2, and and resistance are accessed in input/output terminal
It is connected, realizes input impedance as pure resistance, improve Out-of-band rejection.NMOS tube S1~NMOS tube SN and the connection of capacitance Ci are adopted
With the structure of coupling, " the first NMOS tube " and " source level of the second NMOS tube " is connected with inductance, adjusts the resonance of input circuit
Frequency, a series of inductance L can be good at completing the impedance matching of input, distributed by connection in series-parallel capacitance, easily obtain inductance quilt
Select provide characteristic impedance for：
Obtained frequency is：
And then cutoff frequency
This is better than traditional N channel wave filter, and traditional wave filter its insertion loss L1 and Out-of-band rejection S21 can be by following formulas
It provides
L1=1/ (1+s/Q ω0)
With
S21(s)≈Ron/Rs
And for the circuit shown in the present embodiment, it can be assumed that partly exported in K cascaded transmission lines outside minimum band
Inhibit S21, it is as follows：
Wherein, RonIt is switch conduction resistance, RsIt is port Impedance (i.e. resistance Rs), K is number of stages.
Simulation result is shown, as shown in Fig. 3, Fig. 4 and Fig. 6, the variable band-pass filter, centre frequency adjustable extent is
0.4~1.6GHz, in-band insertion loss S11 are up to 34dB, and variable band-pass filter has the Out-of-band rejection of 72dB, compared to existing
Some voltage mode RF ICs, the variable band-pass filter of the present embodiment have higher speed, preferably anti-interference
Property, lower power consumption and more simplified circuit structure, are easily integrated, improve the high frequency response of traditional N channel wave filter, favorably
In meeting the needs of following receiver complexity and flexibility.
The foregoing is merely presently preferred embodiments of the present invention, is not intended to limit the invention, it is all the present invention spirit and
Within principle, any modification, equivalent replacement, improvement and so on should all be included in the protection scope of the present invention.
Claims (7)
1. a kind of CMOS broadbands distribution variable band-pass filter, which is characterized in that including：K grades of N channel filtering group modules, point
Cloth inductor module, Serial capacitance Cj modules and load stage circuit module；
The K grades of N channel filtering group module is connect respectively with the distributed inductance module and the Serial capacitance Cj modules, also
Ground connection and external outer clock circuit；
The distributed inductance module is also connect with the load stage circuit module；
The Serial capacitance Cj modules are also grounded；
Wherein, the K is positive integer, and the N is positive even numbers.
A kind of 2. CMOS broadbands distribution variable band-pass filter according to claim 1, which is characterized in that the distribution
Formula inductor module includes：Sequentially connected radio-frequency voltage source Vin, resistance Rs, capacitance C1, the first inductance L/2, K-1 inductance L,
And the second inductance L/2；
The capacitance C1, the first inductance L/2 and the K grades of N channel filtering group module are sequentially connected, the first inductance L/
2nd, first inductance L and the K grades of N channel filtering group module are sequentially connected, first inductance L, described in second
Inductance L and the K grades of N channel filtering group module are sequentially connected, second inductance L, third the inductance L and K
Grade N channel filtering group module is sequentially connected, and so on, the inductance L, K-1 inductance L of K-2 and K grades described
N channel filtering group module is sequentially connected；
The K-1 inductance L, the second inductance L/2 and the load stage circuit module are sequentially connected.
A kind of 3. CMOS broadbands distribution variable band-pass filter according to claim 2, which is characterized in that the series
Capacitance Cj modules include：K capacitance Cj；
The K grades of N channel filtering group module is also grounded by the K capacitance Cj respectively.
A kind of 4. CMOS broadbands distribution variable band-pass filter according to claim 3, which is characterized in that the K grades of N
Channel filtering group module includes：Pass through the 1st grade of filtering group of K capacitance Cj ground connection to K grades of filtering groups, K institute respectively
Filtering group is stated to correspond with the K capacitance Cj；
The capacitance C1, the first inductance L/2 and the 1st grade of filtering group are sequentially connected, the first inductance L/2, first
A inductance L and the 2nd grade of filtering group is sequentially connected, first inductance L, second inductance L and 3rd level institute
Filtering group to be stated to be sequentially connected, second inductance L, third inductance L and the 4th grade of filtering group are sequentially connected, according to
Secondary to analogize, the K-2 inductance L, the K-1 inductance L and the K grades of filtering groups are sequentially connected.
5. a kind of CMOS broadbands distribution variable band-pass filter according to claim 4, which is characterized in that per first-level filtering
Wave group includes：N number of first NMOS tube, N number of second NMOS tube and N/2 capacitance Ci, form N number of channel filtering unit altogether；
In N number of channel filtering unit, the connection mode of difference is used between each two channel filtering unit；
The grid of N number of first NMOS tube and N number of second NMOS tube distinguishes external outer clock circuit；
The source level of N number of first NMOS tube or N number of second NMOS tube inductance connection corresponding with the grade filtering group respectively,
Also it is grounded respectively by the corresponding capacitance Cj of the grade filtering group；
The drain electrode of N number of second NMOS tube or N number of first NMOS tube is grounded respectively.
6. a kind of CMOS broadbands distribution variable band-pass filter according to claim 5, which is characterized in that described each
In grade filtering group,
Each described channel filtering unit includes first NMOS tube, described in second NMOS tube and one
Capacitance Ci；The source level of the first NMOS tube first inductance L/2 corresponding with the grade filtering group or an inductance L connect
It connects, is also grounded by the corresponding capacitance Cj of the grade filtering group, the grounded drain of second NMOS tube；
In first channel filtering unit, the drain electrode of the first NMOS tube is connected by first capacitance Ci and the source level of the second NMOS tube
It connects, in second channel filtering unit, the drain electrode of the first NMOS tube passes through first capacitance Ci and the source level of the second NMOS tube
Connection；
In third channel filtering unit, the drain electrode of the first NMOS tube is connected by second capacitance Ci and the source level of the second NMOS tube
It connects, in the 4th channel filtering unit, the drain electrode of the first NMOS tube passes through second capacitance Ci and the source level of the second NMOS tube
Connection；
And so on, in the N-1 channel filtering unit, the drain electrode of the first NMOS tube passes through the N/2 capacitance Ci and second
The source level connection of NMOS tube, in n-th channel filtering unit, the drain electrode of the first NMOS tube passes through the N/2 capacitance Ci and the
The source level connection of two NMOS tubes.
7. according to a kind of CMOS broadbands distribution variable band-pass filter of claim 2 to 6 any one of them, feature exists
In the load stage circuit module includes：The capacitance C2 of interconnection and resistance RL；
The resistance RLOne end connect by the capacitance C2 with one end of the second inductance L/2；
The resistance RLThe other end is grounded.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN111246553A (en) * | 2020-01-17 | 2020-06-05 | 广西师范大学 | Power self-adjusting frequency band self-adaptive low-power-consumption wireless ad hoc network method and device |
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