CN108176854A - The modification method that electron beam defocuses - Google Patents
The modification method that electron beam defocuses Download PDFInfo
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Abstract
The invention belongs to the modification methods that electron beam correction technique field more particularly to a kind of electron beam defocus, and include the following steps, S1：Establish the scanning range of electron beam and scanning range is discrete for several array points；S2：Establish the control parameter group of each array point；S3：Establish the vector expression of the control parameter group of each array point；S4：The control parameter group matrix of all array points is established according to each vector expression；S5：The control parameter of each focal length value is considered as constant, introduces focal length value compensation rate, according to focal length value and its mathematical relationship of corresponding control parameter, establishes the ratio relation equation of the two；S6：Each focal length compensation rate is determined according to ratio relation equation；S7：The focal length compensation rate of each array point with focal length value is superimposed, forms the corresponding electron beam real focal length value of each array point.The amendment to electron beam focal length value is so just realized, so that the focus point of electron beam is fallen on target point always, realizes the accurate focusing of electron beam.
Description
Technical field
The invention belongs to the modification methods that electron beam correction technique field more particularly to a kind of electron beam defocus.
Background technology
EBSM (electron beam selective melting metal) is a kind of using electron beam as heat source, passes through selective melting fore-put powder layer
Successively manufacture the increases material manufacturing technology of 3-dimensional metal part.In EBSM formings, defocusing during the big drift angle of electron beam can serious shadow
The precision of drip molding is rung, EBSM systems make Electron Beam Focusing using focus coil.Therefore, electron beam is focused on when not deflecting, and
It is defocused in wide-angle deflection.
In the prior art, most of electron-beam scanning systems are to generate defection signal using D/A converter, pass through change
The data of converter are sent to, the path of electron beam can be adjusted or be programmed, it in this way can be to the blooming effect of electron beam
It is limitedly corrected, but still the dispersion problem of the big drift angle of electron beam can not be solved.
Invention content
The purpose of the present invention is to provide the modification methods that a kind of electron beam defocuses, it is intended to solve electron beam in the prior art
The technical issues of easily being defocused at big drift angle.
To achieve the above object, the technical solution adopted by the present invention is：The modification method that a kind of electron beam defocuses, including such as
Lower step,
S1：Establish the scanning range of the electron beam and scanning range is discrete for several array points；
S2：Determine the focal length value of the corresponding electron beam of each array point and line value and with reference to each array point
X-axis coordinate and the Y-axis coordinate of each array point establish the control parameter group of each array point；
S3：Establish the expression formula of the vector corresponding to the control parameter group of each array point；
S4：According to the expression formula of the vector of each array point, the control parameter group of all array points is established
Matrix；
S5：Control parameter corresponding to each focal length value in each control parameter group is considered as constant, and introduce
The focal length compensation rate of the focal length value of the electron beam when deflecting is right according to the focal length value and focal length value institute
The mathematical relationship for the control parameter answered establishes the ratio relation equation of each focal length compensation rate and each focal length value；
S6：Determine that each focal length compensates according to the ratio relation equation of each focal length compensation rate and each focal length value
The mathematical value of amount；
S7：The focal length compensation rate of each array point and the focal length value is superimposed, form each array point
Real focal length value of the corresponding electron beam when deflecting.
Further, the expression formula of the vector in the step S3 is：
Vi,j=[XYFI]i,j (1)
Wherein, Vi,jThe corresponding vector of each array point is represented, X represents the corresponding X-axis of each array point
The control data of coordinate, Y represent the control data of the corresponding Y-axis coordinate of each array point, and F represents each array point
The control data of the corresponding focal length value, I represent the control number of the line value of the corresponding electron beam of each array point
According to.
Further, the expression formula of the matrix in the step S4 is：
M=Vn×m=[XYFI]n×m(2)
Wherein, M represents the matrix that all control parameter groups are formed, and n represents the line number of the matrix, and m represents institute
State matrix column number, Vi,jThe corresponding vector of each array point is represented, X represents the corresponding X-axis of each array point
The control data of coordinate, Y represent the control data of the corresponding Y-axis coordinate of each array point, and F represents each array point
The control data of the corresponding focal length value, I represent the control number of the line value of the corresponding electron beam of each array point
According to.
Further, each focal length compensation rate in the step S5 and the ratio relation equation of each focal length value
For：
Wherein, Δ f represents the focal length compensation rate, and f represents the focal length value, and x represents the X-axis coordinate, described in y is represented
Y-axis coordinate.
Further, to the ratio relation of each focal length compensation rate in the step S5 and each focal length value
Equation carries out mathematics variation, and obtains each focal length compensation rate and the first reduced equation of the ratio of each focal length value：
Wherein, Δ f represents the focal length compensation rate, and f represents the focal length value, and x represents the X-axis coordinate, described in y is represented
Y-axis coordinate.
Further, according to corresponding to the focal length value of the corresponding electron beam of each array point with each focal length value
Control data mathematical relationship, simplify and obtain the ratio relation equation of each focal length compensation rate and each focal length value
The second reduced equation：
Wherein, Δ F represents the control compensation data amount of the focal length value, and f represents the focal length value, and F represents each battle array
The control data of the corresponding focal length value of row point.
Further, the first reduced equation described in simultaneous and second reduced equation, establish equation group.
Further, according to the equation group simultaneous solution, show that the control compensation data magnitude of the focal length value is asked
Solution formula：
Wherein, KΔFFor proportionality coefficient, Δ F represents the control compensation data amount of the focal length value, and f represents the focal length value,
F represents the control data of the corresponding focal length value of each array point, and x represents the X-axis coordinate, and y represents the Y-axis and sits
Mark.
Further, it is determined that the scanning area, and determine the control data group of four angle points of the scanning area, it will
The control data group of four angle points is substituted into the solution formula, obtains the proportionality coefficient of four angle points, and by four
The proportionality coefficient of a angle point is averaged to obtain average proportions coefficient.
Further, the average proportions coefficient value substitutes into the solution formula to acquire each array point corresponding
The control compensation data amount of the focal length value, and the control compensation data amount of each focal length value is substituted into the first simplification side
Cheng Zhong acquires each focal length compensation rate.
Beneficial effects of the present invention：The burnt modification method that defocuses of electron beam of the present invention, by by the scanning model of electron beam
It is several array points to enclose discrete, so just can be refined the scanning range of electron beam specific to each point, and for each
Point concrete analysis electron beam defocuses behavior.By determining the focal length value of the corresponding electron beam of each array point and line value and combining
The X-axis coordinate and Y-axis coordinate of each array point establish the control parameter group of each array point, and this makes it possible to by the electronics of each array point
Beam scanning information digitalization defocuses electron beam by mathematical method convenient for the later stage and is modified.And by by each array point
Control parameter group vectorization, and each vector is included into matrix, so just form the data of the control parameter group of each array point
The control parameter of each array point is transferred in library convenient for the later stage.Since the control parameter of the focal length value corresponding to each array point being considered as
Constant and the focal length compensation rate concept for introducing focal length value, so just can be according to the control corresponding to focal length value and focal length value
The mathematical relationship of parameter establishes the ratio relation equation of each focal length compensation rate and each focal length value.And just can by ratio relation equation
The focal length compensation rate of the focal length value corresponding to each array point is enough obtained, and then each focal length compensation rate and each focal length value is superimposed,
Just real focal length value of the corresponding electron beam of each array point when deflecting has been obtained, has so just been realized to each array point pair
The amendment of the focal length value for the electron beam answered, so that electron beam, in wide-angle deflection, the focus point of electron beam is no longer fallen within
The top of target point, but fall on target point, accurate focusing of the electron beam at big drift angle is just realized in this way.
Description of the drawings
It to describe the technical solutions in the embodiments of the present invention more clearly, below will be to embodiment or description of the prior art
Needed in attached drawing be briefly described, it should be apparent that, the accompanying drawings in the following description be only the present invention some
Embodiment, for those of ordinary skill in the art, without having to pay creative labor, can also be according to these
Attached drawing obtains other attached drawings.
Fig. 1 is the step flow chart of modification method that electron beam provided in an embodiment of the present invention defocuses.
Specific embodiment
The embodiment of the present invention is described below in detail, the example of the embodiment is shown in the drawings, wherein from beginning to end
Same or similar label represents same or similar element or the element with same or like function.Below with reference to attached
The embodiment of Fig. 1 descriptions is exemplary, it is intended to for explaining the present invention, and is not considered as limiting the invention.
In the description of the present invention, it is to be understood that term " length ", " width ", " on ", " under ", "front", "rear",
The orientation or position relationship of the instructions such as "left", "right", " vertical ", " level ", " top ", " bottom " " interior ", " outer " is based on attached drawing institutes
The orientation or position relationship shown is for only for ease of the description present invention and simplifies description rather than instruction or imply signified dress
It puts or element must have specific orientation, with specific azimuth configuration and operation, therefore it is not intended that limit of the invention
System.
In addition, term " first ", " second " are only used for description purpose, and it is not intended that instruction or hint relative importance
Or the implicit quantity for indicating indicated technical characteristic.Define " first " as a result, the feature of " second " can be expressed or
Implicitly include one or more this feature.In the description of the present invention, " multiple " are meant that two or more,
Unless otherwise specifically defined.
In the present invention unless specifically defined or limited otherwise, term " installation ", " connected ", " connection ", " fixation " etc.
Term should be interpreted broadly, for example, it may be being fixedly connected or being detachably connected or integral；Can be that machinery connects
It connects or is electrically connected；It can be directly connected, can also be indirectly connected by intermediary, can be in two elements
The connection in portion or the interaction relationship of two elements.It for the ordinary skill in the art, can be according to specific feelings
Condition understands the concrete meaning of above-mentioned term in the present invention.
As shown in Figure 1, the modification method that a kind of electron beam provided in an embodiment of the present invention defocuses, includes the following steps,
S1：Establish the scanning range of electron beam and scanning range is discrete for several array points；
S2：Determine the corresponding electron beam of each array point focal length value and line value and combine each array point X-axis coordinate and
The Y-axis coordinate of each array point establishes the control parameter group of each array point；
S3：Establish the expression formula of the vector corresponding to the control parameter group of each array point；
S4：The matrix of the control parameter group of all array points is established according to the expression formula of the vector of each array point；
S5：Control parameter corresponding to each focal length value in each control parameter group is considered as constant, and introduce electron beam and exist
The focal length compensation rate of focal length value when deflecting, the mathematical relationship of the control parameter according to corresponding to focal length value and focal length value,
Establish the ratio relation equation of each focal length compensation rate and each focal length value；
S6：The mathematical value of each focal length compensation rate is determined according to the ratio relation equation of each focal length compensation rate and each focal length value；
S7：The focal length compensation rate of each array point is superimposed with focal length value, it forms the corresponding electron beam of each array point and is sending out
Real focal length value during raw deflection.
The modification method that electron beam provided in an embodiment of the present invention defocuses, if by being by the scanning range of electron beam is discrete
Dry array point, so just can refine the scanning range of electron beam specific to each point, and be made a concrete analysis of for each point
Electron beam defocuses behavior.By determining the focal length value of the corresponding electron beam of each array point and line value and combining each array point
X-axis coordinate and Y-axis coordinate establish the control parameter group of each array point, and this makes it possible to by the electron beam scanning information of each array point
Digitlization, defocuses electron beam by mathematical method convenient for the later stage and is modified.And by by the control parameter group of each array point
Vectorization, and each vector is included into matrix, the database of the control parameter group of each array point is so just formd, convenient for the later stage
Transfer the control parameter of each array point.Since the control parameter of the focal length value corresponding to each array point has been considered as constant and has been introduced
The focal length compensation rate concept of focal length value just can close in this way according to the mathematics of the control parameter corresponding to focal length value and focal length value
System establishes each focal length compensation rate and the ratio relation equation of each focal length value.And each array just can be obtained by ratio relation equation
The focal length compensation rate of the corresponding focal length value of point, so each focal length compensation rate and each focal length value is superimposed, just obtain each battle array
Real focal length value of the corresponding electron beam of row point when deflecting, so just realizes to the corresponding electron beam of each array point
The amendment of focal length value, so that electron beam, in wide-angle deflection, the focus point of electron beam no longer falls within the top of target point,
But fall on target point, accurate focusing of the electron beam at big drift angle is just realized in this way so that Electron Beam Focusing value is no longer
It keeps constant, and then realizes the accurate control to electron beam its focal length length in scanning range, avoid electron beam big
Drift angle state defocuses, and has been obviously improved the forming quality of workpiece and so that electron-beam scanning system is easily controllable.
In the present embodiment, the expression formula of the vector in step S3 is：
Vi,j=[XYFI]i,j (1)
Wherein, Vi,jThe corresponding vector of each array point is represented, X represents the control data of the corresponding X-axis coordinate of each array point, Y
The control data of the corresponding Y-axis coordinate of each array point are represented, F represents the control data of the corresponding focal length value of each array point, and I is represented
The control data of the line value of the corresponding electron beam of each array point.
It specifically, so can be by the relevant information of each array point by the vector for the control data for establishing each array point
Data：X-axis coordinate, Y-axis coordinate, focal length value and beam intensity vectorization, and then just using the method for matrix theory, to each battle array
The above- mentioned information data of row point are transferred and are analyzed.Certainly, above-mentioned letter of other mathematical methods to each array point also can be used
Breath data are arranged, and the present embodiment does not limit this.
In the present embodiment, the expression formula of the matrix in step S4 is：
M=Vn×m=[XYFI]n×m (2)
Wherein, M represents the matrix that all control parameter groups are formed, and n represents the line number of matrix, and m represents matrix column number,
Vi,jThe corresponding vector of each array point is represented, X represents the control data of the corresponding X-axis coordinate of each array point, and Y represents each array point
The control data of corresponding Y-axis coordinate, F represent the control data of the corresponding focal length value of each array point, and I represents each array point and corresponds to
Electron beam line value control data.
Specifically, by by the moment of a vector array of the relevant information data of all array points, just significantly optimizing in this way pair
The process that the extraction of the relevant information data of each array point is called so that computer can be called each in matrix by mathematical software
The relevant information data of array point, and then the processing of the data of computer is realized, so just significantly reduce artificial work
Amount, and make it possible the discrete array point even more for thousands of of electron beam scanning area.In this way, scanning area
Array point in domain the more, will be more accurate to the amendment that defocuses of the electron beam under big drift angle state.
Further, scanning range is specially：120mm × 120mm, and the quantity of the array point in the scanning range is then
361201, i.e., 361201 array points are evenly equipped in square region.Specific in matrix, as the line number of matrix is 601,
Matrix column number is also 601.Meanwhile vertical be spaced with lateral separation of two adjacent array points is 0.2mm, and electron beam
A diameter of 0.4mm.Electron beam, which just can be realized, in this way covers each array point in scanning area, will not omit and sweep
Any one array point in region is retouched, and then ensure that the data of each array point in scanning area are effective, is obviously improved
The modified accuracy that is defocused under big drift angle state to electron beam.
In the present embodiment, each focal length compensation rate in step S5 and the ratio relation equation of each focal length value are：
Wherein, Δ f represents focal length compensation rate, and f represents focal length value, and x represents X-axis coordinate, and y represents Y-axis coordinate.
Specifically, it by building the ratio relation equation of above-mentioned each focal length compensation rate and each focal length value, just obtains in this way
Focal length compensation rate corresponding to each array point so just can determine that electron beam each array point institute under big drift angle state is right
The real focal length value for the electron beam answered, so that the focus point of electron beam is accurately fallen on target point, it is achieved thereby that electronics
Vernier focusing under the state of Shu great drift angles.
Preferably, above-mentioned ratio relation equation can further be optimized, to obtain in above-mentioned ratio relation equation
Between reduced equation：
In this way, by simplifying to above-mentioned ratio relation equation, central line intermediate reduction equation is then obtained, is allowed in this way pair
Simplification has been calculated in focal length compensation rate, improves the accuracy rate of focal length compensation rate calculating.
In the present embodiment, mathematics is carried out to the ratio relation equation of each focal length compensation rate in step S5 and each focal length value
Variation, and obtain each focal length compensation rate and the first reduced equation of the ratio of each focal length value：
Wherein, Δ f represents focal length compensation rate, and f represents focal length value, and x represents X-axis coordinate, and y represents Y-axis coordinate.
Specifically, the first reduced equation is further simplified to obtain on the basis of above-mentioned central line intermediate reduction equation, passes through
Above formula can intuitively obtain focal length compensation rate and the mathematical relationship of focal length value, and the focal length compensation rate of as each array point is equal to
The quadratic sum Y-axis coordinate value of the X-axis coordinate value of each array point square the sum of ratio with two focus length value.Pass through as a result,
Above formula can simple computation go out the value of the focal length compensation rate corresponding to each array point.
In the present embodiment, the control number according to corresponding to the focal length value of the corresponding electron beam of each array point and each focal length value
According to mathematical relationship, simplify the second reduced equation of the ratio relation equation for obtaining each focal length compensation rate and each focal length value：
Wherein, Δ F represents the control compensation data amount of focal length value, and f represents focal length value, and F represents the corresponding coke of each array point
Control data away from value.
Specifically, the focal length value of the corresponding electron beam of each array point and the mathematics of the control data corresponding to each focal length value close
It is to be：
In this way, the concept of the control compensation data amount by introducing focal length value, and combine the focal length value of electron beam and each coke
Mathematical relationship away from the corresponding control data of value can obtain the second above-mentioned reduced equation, thus by the control number of focal length value
Mathematical relationship is established according between compensation rate and the compensation rate of focal length value.In this way, can make computer by mathematical software first
The control parameter group of each array point in above-mentioned matrix is transferred, the control data of focal length value are obtained further according to each control parameter group
Compensation rate, the compensation rate of such focal length value can pass through the control compensation data amount of focal length value and the control parameter of each array point
The formed matrix correlation of group joins, and then the compensation rate of focal length value is acquired eventually by the mathematical software installed in computer.
In the present embodiment, the first reduced equation of simultaneous and the second reduced equation are established equation group, and are obtained according to equation group
Go out the solution formula of the control compensation data magnitude of focal length value：
Wherein, KΔFFor proportionality coefficient, Δ F represents the control compensation data amount of focal length value, and f represents focal length value, and F represents each
The control data of the corresponding focal length value of array point, x represent X-axis coordinate, and y represents Y-axis coordinate.
Specifically, pass through the first reduced equation of simultaneous and the second reduced equation, the control of the focal length value of array point each in this way
Compensation data amount processed can establish contact with the X-axis coordinate of each array point, Y-axis coordinate and proportionality coefficient.So it can be realized
Solution to the control compensation data amount of the focal length value of each array point.
In the present embodiment, it determines scanning area, and determines the control data group of four angle points of scanning area, by four
The control data group of angle point is substituted into solution formula, obtains the proportionality coefficient of four angle points, and by the proportionality coefficient of four angle points
It is averaged to obtain average proportions coefficient.
Specifically, it can be obtained by above-mentioned solution formula, proportionality coefficient is equal to the control parameter value of electron beam focal length
Negative and focal length value square the ratio between four times.The proportionality coefficient of each array point can so be acquired.And by by four angles
The control data group of point is substituted into solution formula, obtains the proportionality coefficient of four angle points, and the proportionality coefficient of four angle points is taken
Averagely it is worth to average proportions coefficient.It will pass through the proportionality coefficient of limited a array point taken in this way and relatively accurately obtain
Average proportions coefficient, without calculating the proportionality coefficient of each array point, so as to save considerably amount of calculation.Certainly, root
According to actual conditions, the solution that more array points carry out average proportions coefficient is also can use, the present embodiment does not limit this.
In the present embodiment, average proportions coefficient value is substituted into solution formula and acquires the corresponding focal length value of each array point
Compensation data amount is controlled, and the control compensation data amount of each focal length value is substituted into the first reduced equation, acquires each focal length compensation
Amount.
Specifically, the control number of average proportions coefficient and the corresponding focal length value of each array point is acquired by above-mentioned solution formula
After compensation rate, just the control compensation data amount of the corresponding focal length value of each array point need to be only substituted into the first reduced equation in this way
Carry out the solution of the focal length compensation rate of each array point.It is final to realize repairing for focal length value that each array point is corresponded to electron beam
Just.
The foregoing is merely a prefered embodiment of the invention, is not intended to limit the invention, it is all the present invention spirit and
All any modification, equivalent and improvement made within principle etc., should all be included in the protection scope of the present invention.
Claims (10)
1. a kind of modification method that electron beam defocuses, it is characterised in that：Include the following steps：
S1：Establish the scanning range of the electron beam and scanning range is discrete for several array points；
S2：Determine the focal length value of the corresponding electron beam of each array point and line value and with reference to the X of each array point
The Y-axis coordinate of axial coordinate and each array point establishes the control parameter group of each array point；
S3：Establish the expression formula of the vector corresponding to the control parameter group of each array point；
S4：The square of the control parameter group of all array points is established according to the expression formula of the vector of each array point
Battle array；
S5：Control parameter corresponding to each focal length value in each control parameter group is considered as constant, and described in introducing
The focal length compensation rate of the focal length value of the electron beam when deflecting, according to corresponding to the focal length value and the focal length value
The mathematical relationship of control parameter establishes the ratio relation equation of each focal length compensation rate and each focal length value；
S6：Each focal length compensation rate is determined according to the ratio relation equation of each focal length compensation rate and each focal length value
Mathematical value；
S7：The focal length compensation rate of each array point and the focal length value is superimposed, it forms each array point and corresponds to
Real focal length value of the electron beam when deflecting.
2. the modification method that electron beam according to claim 1 defocuses, it is characterised in that：In the step S3, it is described
Vector expression formula be：
Vi,j=[XYFI]i,j (1)
Wherein, Vi,jThe corresponding vector of each array point is represented, X represents the corresponding X-axis coordinate of each array point
Control data, Y represents the control data of the corresponding Y-axis coordinate of each array point, and F represents each array point and corresponds to
The focal length value control data, I represents the control data of the line value of the corresponding electron beam of each array point.
3. the modification method that electron beam according to claim 2 defocuses, it is characterised in that：It is described in the step S4
The expression formula of matrix is：
M=Vn×m=[XYFI]n×m (2)
Wherein, M represents the matrix that all control parameter groups are formed, and n represents the line number of the matrix, and m represents the square
The columns of battle array, Vi,jThe corresponding vector of each array point is represented, X represents the corresponding X-axis coordinate of each array point
Control data, Y represents the control data of the corresponding Y-axis coordinate of each array point, and F represents each array point and corresponds to
The focal length value control data, I represents the control data of the line value of the corresponding electron beam of each array point.
4. the modification method that electron beam according to claim 1 defocuses, it is characterised in that：In the step S5, each institute
It states focal length compensation rate and the ratio relation equation of each focal length value is：
Wherein, Δ f represents the focal length compensation rate, and f represents the focal length value, and x represents the X-axis coordinate, and y represents the Y-axis
Coordinate.
5. the modification method that electron beam according to claim 4 defocuses, it is characterised in that：To each institute in the step S5
It states focal length compensation rate and the ratio relation equation of each focal length value carries out mathematics variation, and obtain each focal length compensation
Amount and the first reduced equation of the ratio of each focal length value：
Wherein, Δ f represents the focal length compensation rate, and f represents the focal length value, and x represents the X-axis coordinate, and y represents the Y-axis
Coordinate.
6. the modification method that electron beam according to claim 5 defocuses, it is characterised in that：It is corresponded to according to each array point
The electron beam focal length value and each focal length value corresponding to control data mathematical relationship, simplify and obtain each coke
The second reduced equation away from compensation rate Yu the ratio relation equation of each focal length value：
Wherein, Δ F represents the control compensation data amount of the focal length value, and f represents the focal length value, and F represents each array point
The control data of the corresponding focal length value.
7. the modification method that electron beam according to claim 6 defocuses, it is characterised in that：First reduced equation described in simultaneous
With second reduced equation, equation group is established.
8. the modification method that electron beam according to claim 7 defocuses, it is characterised in that：It is asked according to the equation group simultaneous
Solution obtains the solution formula of the control compensation data magnitude of the focal length value：
Wherein, KΔFFor proportionality coefficient, Δ F represents the control compensation data amount of the focal length value, and f represents the focal length value, and F is represented
The control data of the corresponding focal length value of each array point, x represent the X-axis coordinate, and y represents the Y-axis coordinate.
9. the modification method that electron beam according to claim 8 defocuses, it is characterised in that：Determine the scanning area, and
It determines the control data group of four angle points of the scanning area, the control data group of four angle points is substituted into the solution
In formula, the proportionality coefficient of four angle points is obtained, and the proportionality coefficient of four angle points is averaged and is averaged
Proportionality coefficient.
10. the modification method that electron beam according to claim 9 defocuses, it is characterised in that：By the average proportions coefficient
Value substitutes into the control compensation data amount that the corresponding focal length value of each array point is acquired in the solution formula, and by each institute
The control compensation data amount for stating focal length value is substituted into first reduced equation, acquires each focal length compensation rate.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109465445A (en) * | 2018-11-12 | 2019-03-15 | 成都飞机工业（集团）有限责任公司 | A method of the reduction 3D printing part residual stress based on aluminum matrix composite |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN88102270A (en) * | 1987-04-09 | 1988-10-26 | 菲利浦光灯制造公司 | The display unit that picture tube and deflection system are formed |
| CN1062052A (en) * | 1990-09-14 | 1992-06-17 | 汤姆逊电子消费品公司 | Improve the method and apparatus of vertical sharpness of picture tubes |
| CN1148258A (en) * | 1995-05-12 | 1997-04-23 | 株式会社日立制作所 | Method of correcting deflection defocusing in CRT, CRT employing same, and image display system including same CRT |
| CN105427299A (en) * | 2015-11-13 | 2016-03-23 | 北京工商大学 | Camera focal length solving method based on distortion correction |
| CN105510913A (en) * | 2015-11-11 | 2016-04-20 | 湖北工业大学 | Heterogeneous optical and SAR remote sensing image combined positioning method based in similar optical image space correction |
| CN106057619A (en) * | 2015-04-10 | 2016-10-26 | 国际商业机器公司 | Scanning transmission electron microscope having multiple beams and post-detection image correction |
| KR101711042B1 (en) * | 2016-11-15 | 2017-02-28 | 주식회사 대건테크 | A STL File Coupling Method |
| CN107130124A (en) * | 2017-04-21 | 2017-09-05 | 北京科技大学 | A kind of method that increases material manufacturing technology shapes high-entropy alloy |
-
2017
- 2017-12-27 CN CN201711447989.0A patent/CN108176854A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN88102270A (en) * | 1987-04-09 | 1988-10-26 | 菲利浦光灯制造公司 | The display unit that picture tube and deflection system are formed |
| CN1062052A (en) * | 1990-09-14 | 1992-06-17 | 汤姆逊电子消费品公司 | Improve the method and apparatus of vertical sharpness of picture tubes |
| CN1148258A (en) * | 1995-05-12 | 1997-04-23 | 株式会社日立制作所 | Method of correcting deflection defocusing in CRT, CRT employing same, and image display system including same CRT |
| CN106057619A (en) * | 2015-04-10 | 2016-10-26 | 国际商业机器公司 | Scanning transmission electron microscope having multiple beams and post-detection image correction |
| CN105510913A (en) * | 2015-11-11 | 2016-04-20 | 湖北工业大学 | Heterogeneous optical and SAR remote sensing image combined positioning method based in similar optical image space correction |
| CN105427299A (en) * | 2015-11-13 | 2016-03-23 | 北京工商大学 | Camera focal length solving method based on distortion correction |
| KR101711042B1 (en) * | 2016-11-15 | 2017-02-28 | 주식회사 대건테크 | A STL File Coupling Method |
| CN107130124A (en) * | 2017-04-21 | 2017-09-05 | 北京科技大学 | A kind of method that increases material manufacturing technology shapes high-entropy alloy |
Non-Patent Citations (1)
| Title |
|---|
| 郭超: "电子束选区熔化的数字化扫描系统开发", 《第15届全国特种加工学术会议论文集（下）》 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109465445A (en) * | 2018-11-12 | 2019-03-15 | 成都飞机工业（集团）有限责任公司 | A method of the reduction 3D printing part residual stress based on aluminum matrix composite |
| CN109465445B (en) * | 2018-11-12 | 2020-12-01 | 成都飞机工业（集团）有限责任公司 | Method for weakening residual stress of 3D printed part based on aluminum matrix composite |
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