CN107910278A - A kind of device of the poiysilicon deposition process process oxygen concentration of monitoring in real time - Google Patents
A kind of device of the poiysilicon deposition process process oxygen concentration of monitoring in real time Download PDFInfo
- Publication number
- CN107910278A CN107910278A CN201711132423.9A CN201711132423A CN107910278A CN 107910278 A CN107910278 A CN 107910278A CN 201711132423 A CN201711132423 A CN 201711132423A CN 107910278 A CN107910278 A CN 107910278A
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- Prior art keywords
- gas
- pipeline
- oxygen concentration
- boiler tube
- branch
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/24—Deposition of silicon only
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Examining Or Testing Airtightness (AREA)
Abstract
The invention discloses a kind of device of the poiysilicon deposition process process oxygen concentration of monitoring in real time, suitable for furnace process polysilicon deposition board, the furnace process polysilicon deposition board includes reaction boiler tube, the gas that is connected with the reaction boiler tube is gone out pipeline and pump, wherein, gas pipeline of going out is equipped with branch coupling device, and oxygen sensitive device is equipped with the branch coupling device.The present invention can effectively monitor the situation of change of boiler tube board reaction boiler tube internal oxygen concentration at the first time, avoid scrapping caused by wafer component failure caused by the micro- gas leakage of reaction boiler tube.Board maintaining can be saved by using the present invention to answer a pager's call time about 2h, lifts board production capacity, directly reaction board situation.
Description
Technical field
The present invention relates to the technical field of poiysilicon deposition process, more particularly to a kind of monitoring poiysilicon deposition process process
The device of oxygen concentration.
Background technology
Polysilicon membrane, because its distinctive conductive characteristic and the advantages of being easily achieved self-registered technology, are widely used in
The manufacture of integrated circuit and various electronic devices.It is typically to take TEL Formula boards low-pressure vapor phase chemical in the prior art
(LPCVD) depositing polysilicon film, the principle of reaction is mainly silane (SiH4) thermal decomposition.
In the deposition process of polysilicon, if with the presence of oxygen, SiO can be caused2Generation, change deposit polycrystalline silicon dielectric
Property, so as to change the threshold voltage and leakage current of device, cause the failure of device.TEL Formula boards when technique carries out,
It is existing for no oxygen in reaction boiler tube.If but the micro- leakage of reaction boiler tube, the oxygen in air can be made to diffuse into reaction boiler tube.
In order to monitor the oxygen content inside reaction boiler tube, in the prior art usually can by contrastive detection in reaction boiler tube it is front and rear
The internal oxygen content for changing to monitor reaction boiler tube of oxide thickness, this method has certain hysteresis quality, can not do
To real time monitoring.
The content of the invention
In view of this, it is an object of the invention to provide a kind of poiysilicon deposition process process oxygen concentration of monitoring in real time
Device.
To achieve these goals, the technical solution taken of the present invention is：
A kind of device of the poiysilicon deposition process process oxygen concentration of monitoring in real time, suitable for furnace process polysilicon deposition
Board, the outer outlet pipe of gas that the furnace process polysilicon deposition board includes reaction boiler tube, is connected with the reaction boiler tube
Road and pump, wherein, gas pipeline of going out is equipped with branch coupling device, and oxygen sensitive device is equipped with the branch coupling device.
The device of above-mentioned real-time monitoring poiysilicon deposition process process oxygen concentration, wherein, when the pump will be described anti-
Answer gas in boiler tube by the gas go out pipeline extract out when, the gas is quick by the branch coupling device, the oxygen
Sensor monitoring passes through oxygen in the gas of the branch coupling device in real time content and concentration.
The device of above-mentioned real-time monitoring poiysilicon deposition process process oxygen concentration, wherein, the branch coupling device includes
With the gas go out pipeline the branch connection entrance pipe that is connected of upstream and be connected with the go out downstream of pipeline of the gas
Logical branch connection export pipeline.
The device of above-mentioned real-time monitoring poiysilicon deposition process process oxygen concentration, wherein, the oxygen sensitive device is set
It is placed between the branch connection entrance pipe and branch connection export pipeline.
The device of above-mentioned real-time monitoring poiysilicon deposition process process oxygen concentration, wherein, the branch joins entrance pipe
Go out with the gas between pipeline, branch connection export pipeline and the gas go out between pipeline to be to be tightly connected.
The device of above-mentioned real-time monitoring poiysilicon deposition process process oxygen concentration, wherein, the branch multi pack is set to one
Body formula structure, is sealed connection between the oxygen sensitive device and the branch coupling device.
As a result of above-mentioned technology, the good effect for being allowed to have compared with prior art is the present invention：
(1) present invention can effectively monitor the change feelings of boiler tube board reaction boiler tube internal oxygen concentration at the first time
Condition, avoids scrapping caused by wafer component failure caused by the micro- gas leakage of reaction boiler tube.
(2) board maintaining can be saved by using the present invention to answer a pager's call time about 2h, lift board production capacity, it is directly anti-
Answer board situation.
Brief description of the drawings
Fig. 1 is the schematic diagram of the device of the real-time monitoring poiysilicon deposition process process oxygen concentration of the present invention.
Fig. 2 is the enlarged diagram of the device of the real-time monitoring poiysilicon deposition process process oxygen concentration of the present invention.
In attached drawing：1st, reaction boiler tube；2nd, outgoing gas piping；3rd, pump；4th, branch coupling device；41st, branch connection entrance pipe；42、
Branch joins export pipeline；5th, oxygen sensitive device.
Embodiment
The invention will be further described with specific embodiment below in conjunction with the accompanying drawings, but not as limiting to the invention.
Fig. 1 is the schematic diagram of the device of the real-time monitoring poiysilicon deposition process process oxygen concentration of the present invention, and Fig. 2 is this
The enlarged diagram of the device of the real-time monitoring poiysilicon deposition process process oxygen concentration of invention, refers to shown in Fig. 1, Fig. 2,
A kind of device of the real-time monitoring poiysilicon deposition process process oxygen concentration of preferred embodiment is shown, suitable for furnace process
Polysilicon deposition board, furnace process polysilicon deposition board include reaction boiler tube 1, outside the gas that is connected with reaction boiler tube 1
Go out pipeline 2 and pump 3, wherein, gas pipeline 2 of going out is equipped with branch coupling device 4, and branch coupling device 4 is interior to be equipped with oxygen sensitive device 5.
In addition, as a kind of preferred embodiment, when pump 3 takes out the gas in reaction boiler tube 1 by gas pipeline 2 of going out
When going out, gas passes through branch coupling device 4 at the same time, and oxygen sensitive device 5 monitors the content of oxygen in the gas by branch coupling device 4 in real time
And concentration, so as to achieve the purpose that the content and concentration for monitoring the oxygen in reaction boiler tube 1.
The foregoing is merely preferred embodiments of the present invention, not thereby limit embodiments of the present invention and protection model
Enclose.
The present invention also has on the basis of the above is implemented as follows mode：
In further embodiment of the present invention, continuing with referring to shown in Fig. 1, Fig. 2, branch coupling device 4 includes going out with gas
The branch connection entrance pipe 41 and the branch connection outlet for the communicated downstream of pipeline 2 of going out with gas that the upstream of pipeline 2 is connected
Road 42.
In further embodiment of the present invention, oxygen sensitive device 5 is arranged at branch connection entrance pipe 41 and Zhi Lian export pipelines
Between 42.Gone out by gas the interior gas of pipeline 2, a part joins entrance pipe 41 by oxygen sensitive device 5 again by branch
Export pipeline 42 is joined by branch return to gas and go out the downstream of pipeline 2, the oxygen that the gas is monitored by oxygen sensitive device 5 contains
Amount and oxygen concentration.
In further embodiment of the present invention, branch connection entrance pipe 41 and gas are gone out between pipeline 2, branch connection export pipeline
42 and gas go out to be to be tightly connected between pipeline 2, autoreaction boiler tube 1, gas are gone out pipeline 2,41 and of branch connection entrance pipe
Sealing pipeline is respectively formed between branch connection export pipeline 42, prevents extraneous air from invading and introducing oxygen, it is right to influence oxygen sensitive device 5
The monitoring of the situation of change of oxygen concentration inside reaction boiler tube 1.
In further embodiment of the present invention, branch coupling device 4 is an integral structure, and the detecting means of oxygen sensitive device 5 run through
The side wall of branch coupling device 4 and the channel interior for being arranged at branch coupling device 4, connect between oxygen sensitive device 5 and branch coupling device 4 for sealing
Connect.
In further embodiment of the present invention, the device of monitoring poiysilicon deposition process process oxygen concentration is applicable in real time
Technology node is >=130nm, 90nm, 65/55nm and 45/40nm.
It these are only preferred embodiments of the present invention, not thereby limit embodiments of the present invention and protection domain, it is right
For those skilled in the art, it should can appreciate that and all be replaced with being equal made by description of the invention and diagramatic content
Change and obviously change obtained scheme, should be included in protection scope of the present invention.
Claims (5)
- A kind of 1. device of the poiysilicon deposition process process oxygen concentration of monitoring in real time, suitable for furnace process polysilicon deposition machine Platform, the furnace process polysilicon deposition board includes reaction boiler tube, the gas that is connected with the reaction boiler tube is gone out pipeline And pump, it is characterised in that gas pipeline of going out is equipped with branch coupling device, and the branch coupling device is interior to be equipped with oxygen sensitive Device.
- 2. the device of the poiysilicon deposition process process oxygen concentration of monitoring in real time according to claim 1, it is characterised in that The branch coupling device include with the gas go out pipeline upstream be connected branch connection entrance pipe and with outside the gas Go out the branch connection export pipeline of the communicated downstream of pipeline.
- 3. the device of the poiysilicon deposition process process oxygen concentration of monitoring in real time according to claim 2, it is characterised in that The oxygen sensitive device is arranged between the branch connection entrance pipe and branch connection export pipeline.
- 4. the device of the real-time monitoring poiysilicon deposition process process oxygen concentration according to Claims 2 or 3, its feature exist Between, branch connection entrance pipe and the gas go out pipeline, branch connection export pipeline and the gas goes out pipeline Between be tightly connected.
- 5. the device of the real-time monitoring poiysilicon deposition process process oxygen concentration according to Claims 2 or 3, its feature exist In the branch coupling device is an integral structure, and is sealed connection between the oxygen sensitive device and the branch coupling device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711132423.9A CN107910278A (en) | 2017-11-15 | 2017-11-15 | A kind of device of the poiysilicon deposition process process oxygen concentration of monitoring in real time |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711132423.9A CN107910278A (en) | 2017-11-15 | 2017-11-15 | A kind of device of the poiysilicon deposition process process oxygen concentration of monitoring in real time |
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| Publication Number | Publication Date |
|---|---|
| CN107910278A true CN107910278A (en) | 2018-04-13 |
Family
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201711132423.9A Pending CN107910278A (en) | 2017-11-15 | 2017-11-15 | A kind of device of the poiysilicon deposition process process oxygen concentration of monitoring in real time |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1769518A (en) * | 2004-10-12 | 2006-05-10 | 应用材料股份有限公司 | Endpoint detector and particle monitor |
| CN201689872U (en) * | 2009-10-30 | 2010-12-29 | 中芯国际集成电路制造(上海)有限公司 | Heating furnace with gas detection equipment |
| CN102751211A (en) * | 2011-04-17 | 2012-10-24 | 中国科学院微电子研究所 | Monitoring method of oxygen gas concentration in fast thermal annealing equipment |
| CN103474368A (en) * | 2012-06-06 | 2013-12-25 | 无锡华润上华科技有限公司 | Method for detecting oxygen leakage of reaction chamber of annealing equipment |
| CN109097755A (en) * | 2017-06-20 | 2018-12-28 | 华邦电子股份有限公司 | Processing chamber gas detecting system and its operating method |
-
2017
- 2017-11-15 CN CN201711132423.9A patent/CN107910278A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1769518A (en) * | 2004-10-12 | 2006-05-10 | 应用材料股份有限公司 | Endpoint detector and particle monitor |
| CN201689872U (en) * | 2009-10-30 | 2010-12-29 | 中芯国际集成电路制造(上海)有限公司 | Heating furnace with gas detection equipment |
| CN102751211A (en) * | 2011-04-17 | 2012-10-24 | 中国科学院微电子研究所 | Monitoring method of oxygen gas concentration in fast thermal annealing equipment |
| CN103474368A (en) * | 2012-06-06 | 2013-12-25 | 无锡华润上华科技有限公司 | Method for detecting oxygen leakage of reaction chamber of annealing equipment |
| CN109097755A (en) * | 2017-06-20 | 2018-12-28 | 华邦电子股份有限公司 | Processing chamber gas detecting system and its operating method |
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Application publication date: 20180413 |