CN107845711A - LED flip chip of motor current extension uniformity and preparation method thereof - Google Patents
LED flip chip of motor current extension uniformity and preparation method thereof Download PDFInfo
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- CN107845711A CN107845711A CN201711067904.6A CN201711067904A CN107845711A CN 107845711 A CN107845711 A CN 107845711A CN 201711067904 A CN201711067904 A CN 201711067904A CN 107845711 A CN107845711 A CN 107845711A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 12
- 239000000758 substrate Substances 0.000 claims abstract description 20
- 229910052751 metal Inorganic materials 0.000 claims abstract description 8
- 239000002184 metal Substances 0.000 claims abstract description 8
- 230000004888 barrier function Effects 0.000 claims abstract description 6
- 229910052594 sapphire Inorganic materials 0.000 claims description 10
- 239000010980 sapphire Substances 0.000 claims description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 5
- 238000005530 etching Methods 0.000 claims description 4
- 229910052681 coesite Inorganic materials 0.000 claims description 3
- 229910052906 cristobalite Inorganic materials 0.000 claims description 3
- 238000009413 insulation Methods 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 229910052682 stishovite Inorganic materials 0.000 claims description 3
- 229910052905 tridymite Inorganic materials 0.000 claims description 3
- 238000003780 insertion Methods 0.000 claims description 2
- 230000037431 insertion Effects 0.000 claims description 2
- 230000008021 deposition Effects 0.000 claims 2
- 230000005855 radiation Effects 0.000 claims 1
- 230000000694 effects Effects 0.000 abstract description 5
- 229910002601 GaN Inorganic materials 0.000 description 38
- 238000010586 diagram Methods 0.000 description 8
- 230000005611 electricity Effects 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000001459 lithography Methods 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Led Device Packages (AREA)
Abstract
The present invention relates to LED flip chip of a kind of motor current extension uniformity and preparation method thereof, including substrate and the GaN epitaxial layer being arranged on substrate, GaN epitaxial layer includes n-type GaN layer, mqw light emitting layer, p-type GaN layer and transparency conducting layer from bottom to up, and n-type GaN layer is partially exposed at outer；It is characterized in that：Layer of transparent insulating barrier is deposited on the transparency conducting layer, there is the passage of up/down perforation on transparent insulating layer, the metal reflective layer on transparent insulating layer, metallic reflector is connected by the passage with transparency conducting layer, and P electrode and N electrode are respectively equipped with metallic reflector and the exposed region of n-type GaN layer.The present invention can greatly improve the problem of conventional flip chip structure current expansion is uneven, and not interfere with the reflecting effect of metallic reflector, will not reduce chip brightness.
Description
Technical field
The present invention relates to LED flip chip of a kind of motor current extension uniformity and preparation method thereof, belong to semiconductor
Technical field.
Background technology
In recent years, gallium nitride（GaN）Based light-emitting diode（LED）As most valued light source technology, wherein LED upside-down mountings
Chip technology turns into one of focus.Compared with positive cartridge chip, LED flip chip has low-voltage, high brightness, high reliability, height
The features such as saturation current density, there is splendid development prospect.
Typical LED flip chip schematic diagram is shown in Fig. 1.In general, flip chip structure is respectively from bottom to top：Lan Bao
Stone lining bottom 1, n-type GaN layer 2, mqw light emitting layer 3, p-type GaN layer 4, transparency conducting layer 5, metallic reflector 6, electrode（P electrode
And N electrode）7.Wherein, n-type GaN layer 2, mqw light emitting layer 3, p-type GaN layer 4 belong to GaN epitaxial layer, the work of transparency conducting layer 5
With being to form Ohmic contact with p-type GaN layer 4, common material is ITO.And the material of metallic reflector 6 be mainly silver or
Aluminium, its effect are after the light of chip internal is reflected via metallic reflector 6, are emitted from sapphire face.P electrode, N electrode point
It is not the positive and negative electrode of chip, it is necessary to explanation, electrode is only simple schematic diagram in Fig. 1, and the electrode of actual fabrication is for encapsulation
Consideration, bigger size and complicated sandwich construction can be used.
Flip-chip couples two electrodes with following package substrate, light is sent from GaN layer in use, face down
Afterwards, it is emitted after the reflection of metallic reflector 6 from sapphire face.This flip chip structure is applicable to various GaN base LED chips,
Including green glow, blue light, purple light and ultraviolet chip.
But this flip-chip with metallic reflector is at work, particularly high current is in use, easily cause electricity
The difficult phenomenon of stream extension.When Fig. 2 analyzes chip operation the reason for electric current congestion.When chip operation, electric current is from P electrode stream
Enter, electric current there are two paths to reach N electrode here.Path A, electric current is extending transversely from metallic reflector 6, then downward to up to N
Electrode；Path B, electric current first reach down to n-type GaN layer 2, then arrival N electrode extending transversely.Due to the electricity of metallic reflector 6
Resistance rate is far smaller than n-type GaN layer 2, it is clear that during chip operation, electric current can prioritizing selection path A.When chip current is smaller,
This current expansion heterogeneity also unobvious, but when chip injects high current, electric current congestion meeting highly significant, whole core
The electric current of piece is all largely concentrated on around N electrode, and the electric current around P electrode can be very weak by contrast.Consequence caused by this, one
It is due to that current expansion not enough causes chip light-emitting area to reduce, causes chip whole lighting efficiency to be greatly reduced, two is due to electricity
Flow through in concentrating on around N electrode, cause that these region caloric values are excessive, and hot-spot causes chip failure.
Therefore, electric current congestion how is avoided, chip current distributing homogeneity is improved, is to be related to such flip-chip light emitting
Brightness and the key technical problem of service life.
The content of the invention
The purpose of the present invention is to overcome the deficiencies in the prior art, there is provided a kind of motor current extension uniformity
LED flip chip and preparation method thereof, the problem of conventional flip chip structure current expansion is uneven can be greatly improved, and
The reflecting effect of metallic reflector is not interfered with, chip brightness will not be reduced.
According to technical scheme provided by the invention, the LED flip chip of the motor current extension uniformity, including substrate
With the GaN epitaxial layer being arranged on substrate, GaN epitaxial layer includes n-type GaN layer from bottom to up, mqw light emitting layer, p-type GaN
Layer and transparency conducting layer, n-type GaN layer are partially exposed at outer；It is characterized in that：It is exhausted that layer of transparent is deposited on the transparency conducting layer
Edge layer, has the passage of up/down perforation, the metal reflective layer on transparent insulating layer on transparent insulating layer, and metallic reflector leads to
Cross the passage to be connected with transparency conducting layer, P electrode and N electricity are respectively equipped with metallic reflector and the exposed region of n-type GaN layer
Pole.
Further, the substrate uses Sapphire Substrate.
Further, the transparent insulating layer is made up of multiple discontinuous figures.
The preparation method of the lifting LED flip chip current expansion uniformity, it is characterized in that, comprise the following steps：
（1）The growth of GaN epitaxial layer is completed on substrate, GaN epitaxial layer is from bottom to up n-type GaN layer, mqw light emitting layer, p
Type GaN layer, transparency conducting layer；N-type GaN layer is exposed, and transparency conducting layer is prepared in p-type GaN layer；
（2）Layer of transparent insulating barrier is deposited over transparent conductive layer；
（3）Transparent insulating layer is performed etching the upper and lower passage of insertion is made on transparent insulating layer, form transparent insulating layer
Discontinuous figure；
（4）The metal reflective layer on above-mentioned discontinuous transparent insulating layer, metallic reflector by the passage with it is transparent
Conductive layer connects；
（5）P electrode and N electrode are made most on metallic reflector and respectively on n-type GaN layer exposed region.
Further, the substrate uses Sapphire Substrate.
Further, the material of the transparent insulating layer uses SiO2。
LED flip chip of motor current extension uniformity of the present invention and preparation method thereof, can greatly improve biography
The problem of flip chip structure current expansion of uniting is uneven, and the reflecting effect of metallic reflector is not interfered with, it will not reduce
Chip brightness.
Brief description of the drawings
Fig. 1 is the structural representation of GaN base LED flip chip.
Fig. 2 is flip-chip current expansion schematic diagram.
Fig. 3 a- Fig. 3 e are the Making programme figure of GaN base LED flip chip, wherein：
Fig. 3 a are the schematic diagram for growing GaN epitaxial layer on a sapphire substrate.
Fig. 3 b are the schematic diagram for depositing transparent insulating layer over transparent conductive layer.
Fig. 3 c are the schematic diagram that discontinuous figure is made into transparent insulating layer.
Fig. 3 d are the schematic diagram of the metal reflective layer on transparent insulating layer.
Fig. 3 e are the schematic diagram to form P electrode and N electrode.
Description of reference numerals：1- Sapphire Substrates, 2-n types GaN layer, 3- mqw light emitting layers, 4-p types GaN layer, 5- are transparent
Conductive layer, 6- metallic reflectors, 7- electrodes, 8- transparent insulating layers.
Embodiment
With reference to specific accompanying drawing, the invention will be further described.
Analyzed from Fig. 2, to improve current expansion uniformity, it is necessary to coupling path A（P areas）With path B（N areas）Electricity
Resistance, both resistance values are closer, then current expansion is more uniform.Because path A resistance is much smaller than path B, therefore there are two
Direction can consider, and first is to reduce path B resistance, and this requires to carry out heavy doping to n-type GaN, reduces n-type GaN resistance values, so
And n-type introduces excessive foreign atom（Silicon atom）, n-type GaN crystal degradation can be caused, excessive dislocation density directly reduces core
Piece luminous efficiency.Article 2 road is to improve path A resistance, makes electric current in P areas difficulty extending transversely, the present invention be to be set based on this
Meter.
The preparation method of the LED flip chip of motor current extension uniformity of the present invention, is comprised the following steps that：
（1）The growth of GaN epitaxial layer is completed first in Sapphire Substrate 1, is exposed n-type GaN layer 2 by selective etch,
And transparency conducting layer 5 is prepared in p-type GaN layer 4；So far the structure of flip-chip serves as a contrast for sapphire from bottom to up as shown in Figure 3 a
Bottom 1, n-type GaN layer 2, mqw light emitting layer 3, p-type GaN layer 4, transparency conducting layer 5；
（2）As shown in Figure 3 b, layer of transparent insulating barrier 8 is deposited on transparency conducting layer 5, the material of transparent insulating layer 8 can be adopted
Use SiO2；
（3）By semiconductor lithography and etching technics, transparent insulating layer 8 is fabricated to discontinuous figure, as shown in Figure 3 c；
（4）The metal reflective layer 6 on above-mentioned discontinuous transparent insulating layer 8, as shown in Figure 3 d；
（5）Eventually through semiconductor lithography and etching technics, on metallic reflector 6 and on the exposed region of n-type GaN layer 2, difference shape
Into P electrode and N electrode.
The preparation method of lifting LED flip chip current expansion uniformity of the present invention, using in metallic reflector
Portion makes discontinuous transparent insulation layer pattern, due to the presence of transparent insulating layer, electric current is expanded in the transverse direction of metallic reflector
Exhibition is necessarily suppressed, and forces electric current to be downwardly into N areas, uneven so as to greatly improve conventional flip chip structure current expansion
The problem of.Simultaneously as the insulating barrier is transparent material, the reflecting effect of metallic reflector can't be influenceed, thus will not be dropped
Low chip brightness.
The technical operation of the present invention is simple and easy to do, and a kind of new skill is provided to solve electric current congestion when flip-chip works
Art scheme, light extraction efficiency is improved to GaN flip-chips and the chip life-span provides a kind of realistic plan.
Claims (6)
1. a kind of LED flip chip of motor current extension uniformity, including substrate and the GaN epitaxial layer that is arranged on substrate,
GaN epitaxial layer includes n-type GaN layer from bottom to up（2）, mqw light emitting layer（3）, p-type GaN layer（4）And transparency conducting layer
（5）, n-type GaN layer（2）It is partially exposed at outer；It is characterized in that：In the transparency conducting layer（5）Upper deposition layer of transparent insulating barrier
（8）, transparent insulating layer（8）The upper passage with up/down perforation, in transparent insulating layer（8）Upper metal reflective layer（6）, metal
Reflecting layer（6）Pass through the passage and transparency conducting layer（5）Connection, in metallic reflector（6）And n-type GaN layer（2）Exposed region
On be respectively equipped with P electrode and N electrode.
2. the LED flip chip of motor current extension uniformity as claimed in claim 1, it is characterized in that：The substrate uses
Sapphire Substrate（1）.
3. the LED flip chip of motor current extension uniformity as claimed in claim 1, it is characterized in that：The transparent insulation
Layer（8）It is made up of multiple discontinuous figures.
4. a kind of preparation method for lifting LED flip chip current expansion uniformity, it is characterized in that, comprise the following steps：
（1）The growth of GaN epitaxial layer is completed on substrate, GaN epitaxial layer is n-type GaN layer from bottom to up（2）, quantum well radiation
Layer（3）, p-type GaN layer（4）, transparency conducting layer（5）；By n-type GaN layer（2）It is exposed, and in p-type GaN layer（4）It is upper to prepare thoroughly
Bright conductive layer（5）；
（2）In transparency conducting layer（5）Upper deposition layer of transparent insulating barrier（8）；
（3）To transparent insulating layer（8）Perform etching in transparent insulating layer（8）The upper passage made above and below insertion, makes transparent insulation
Layer（8）Form discontinuous figure；
（4）In above-mentioned discontinuous transparent insulating layer（8）Upper metal reflective layer（6）, metallic reflector（6）By described logical
Road and transparency conducting layer（5）Connection；
（5）Most in metallic reflector（6）Upper and n-type GaN layer（2）P electrode and N electrode are made on exposed region respectively.
5. the preparation method of lifting LED flip chip current expansion uniformity as claimed in claim 4, it is characterized in that：It is described
Substrate uses Sapphire Substrate（1）.
6. the preparation method of lifting LED flip chip current expansion uniformity as claimed in claim 4, it is characterized in that：It is described
Transparent insulating layer（8）Material use SiO2。
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711067904.6A CN107845711A (en) | 2017-11-03 | 2017-11-03 | LED flip chip of motor current extension uniformity and preparation method thereof |
| PCT/CN2018/094588 WO2019085538A1 (en) | 2017-11-03 | 2018-07-05 | Led flip chip for improving current spreading uniformity, and manufacturing method therefor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711067904.6A CN107845711A (en) | 2017-11-03 | 2017-11-03 | LED flip chip of motor current extension uniformity and preparation method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107845711A true CN107845711A (en) | 2018-03-27 |
Family
ID=61682148
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201711067904.6A Pending CN107845711A (en) | 2017-11-03 | 2017-11-03 | LED flip chip of motor current extension uniformity and preparation method thereof |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN107845711A (en) |
| WO (1) | WO2019085538A1 (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2019085538A1 (en) * | 2017-11-03 | 2019-05-09 | 江苏新广联半导体有限公司 | Led flip chip for improving current spreading uniformity, and manufacturing method therefor |
| CN110246944A (en) * | 2019-03-14 | 2019-09-17 | 佛山市国星半导体技术有限公司 | A kind of uniform LED chip of electric current and preparation method thereof |
| CN113555484A (en) * | 2021-07-06 | 2021-10-26 | 华南师范大学 | High-light-efficiency flip LED chip with high light extraction rate and preparation method thereof |
| CN113644180A (en) * | 2021-08-05 | 2021-11-12 | 厦门士兰明镓化合物半导体有限公司 | Flip LED chip and preparation method thereof |
| CN114695609A (en) * | 2018-04-08 | 2022-07-01 | 厦门市三安光电科技有限公司 | Light emitting diode chip structure and manufacturing method thereof |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN116960253B (en) * | 2023-09-19 | 2023-12-19 | 江西兆驰半导体有限公司 | Flip light-emitting diode chip and preparation method thereof |
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| CN113555484A (en) * | 2021-07-06 | 2021-10-26 | 华南师范大学 | High-light-efficiency flip LED chip with high light extraction rate and preparation method thereof |
| CN113555484B (en) * | 2021-07-06 | 2023-01-06 | 华南师范大学 | High-luminous-efficiency flip LED chip and preparation method thereof |
| CN113644180A (en) * | 2021-08-05 | 2021-11-12 | 厦门士兰明镓化合物半导体有限公司 | Flip LED chip and preparation method thereof |
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Also Published As
| Publication number | Publication date |
|---|---|
| WO2019085538A1 (en) | 2019-05-09 |
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