CN107843567A - A kind of method, system and device for surveying semiconductor energy gap intra-face anisotropy - Google Patents
A kind of method, system and device for surveying semiconductor energy gap intra-face anisotropy Download PDFInfo
- Publication number
- CN107843567A CN107843567A CN201710984212.1A CN201710984212A CN107843567A CN 107843567 A CN107843567 A CN 107843567A CN 201710984212 A CN201710984212 A CN 201710984212A CN 107843567 A CN107843567 A CN 107843567A
- Authority
- CN
- China
- Prior art keywords
- semiconductor
- measured
- energy gap
- polarization
- transmitted spectrum
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
- G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
Abstract
The invention discloses a kind of method, system and device for surveying semiconductor energy gap intra-face anisotropy, wherein, the light of light source transmitting forms polarised light through polarization module, polarised light is penetrated on semiconductor to be measured, spectro-grating makes the light for transmiting semiconductor to be measured be converted into the transmitted spectrum of semiconductor to be measured, the transmitted spectrum of spectrometer measurement semiconductor to be measured；Rotatory polarization module, the transmitted spectrum of different polarization angle in spectrometer measurement semiconductor surface to be measured；The energy gap of different polarization angle in semiconductor surface to be measured is calculated according to the transmitted spectrum of different polarization angle in semiconductor surface to be measured.Beneficial effect：By analyzing in semiconductor transmitted spectrum to be measured because electronics from different valence band transits to the different absorption characteristics that conduction band possesses, it is measurable semiconductor energy gap intra-face anisotropy using light source, polarization module, specimen holder, spectro-grating, spectrometer, wherein light source need not use LASER Light Source, and cost is relatively low.
Description
Technical field
The present invention relates to semi-conducting material field of photoelectric technology, is surveyed more particularly, to one kind each in semiconductor energy gap face
The method, system and device of anisotropy.
Background technology
Semi-conducting material valence-band level is complicated, when in applied to photoelectric device, often because existing from conduction band to not
There is the optical property of intra-face anisotropy with the transition behavior between depth valence band.This optical anisotropy can be used for
Polarize the fields such as display, Polarization Detection.By taking non-polar plane ZnO material as an example, the top of valence band positioned at reciprocal space Γ points can cleave
For Γ9、Γ7 upper、Γ7 upperThree energy subbands.In the presence of stress, Γ is occupied9And Γ7 upperEnergy band | X ± iY>State meeting
Isolate class | Y>State, it correspond to TE patterns.Occupy Γ7 upperThe class of energy band | Z>State correspond to TM patterns.Due to TE and TM patterns
Transition between conduction band and different price band, its direction of propagation and photon energy size are variant.This can be directly influenced
The ultraviolet polarization LED degree of polarizations prepared based on non-polar plane ZnO material.If logical means of testing obtains the valence band fine structure shape
State, it will help device structure design.
Optically anisotropic means only polarize trans cis photoisomerization (PL) test system in existing measurement face.This is
System is radiated at sample surfaces using laser, inspires fluorescence.Use spectrometer measurement fluorescence spectrum again after polarizer filters.It is logical
Cross rotatory polarization piece, you can analyze fluorescent component of the electric field intensity along different directions, obtain the optics on different directions in face
Property.
But polarization trans cis photoisomerization (PL) test system needs to use LASER Light Source.And common 325nm and 532nm
Laser price 20~300,000 yuan.And deep ultraviolet lasers, such as 265nm and 198nm lasers, price is up to
1000000 yuans.The system equipment is expensive, and expensive, use cost is very big.
The content of the invention
It is an object of the invention to overcome above-mentioned technical deficiency, a kind of survey semiconductor energy gap intra-face anisotropy is proposed
Method, system and device, solve above-mentioned technical problem of the prior art.
To reach above-mentioned technical purpose, technical scheme provides a kind of survey in semiconductor energy gap face respectively to different
The method of property, including：
S1, the light of light source transmitting form polarised light through polarization module, and polarised light is penetrated on semiconductor to be measured, is divided light
Grid make the light for transmiting semiconductor to be measured be converted into the transmitted spectrum of semiconductor to be measured, spectrometer measurement semiconductor to be measured it is saturating
Penetrate spectrum；
S2, rotatory polarization module one week, change the polarization direction of polarised light, different in spectrometer measurement semiconductor surface to be measured
The transmitted spectrum of polarization angle；
S3, different polarization in semiconductor surface to be measured calculated according to the transmitted spectrum of different polarization angle in semiconductor surface to be measured
The energy gap of angle.
The present invention also provides a kind of system for surveying semiconductor energy gap intra-face anisotropy, including：
Single Angle Measurement Module：The light of light source transmitting forms polarised light through polarization module, and polarised light is penetrated to be measured half
On conductor, spectro-grating makes the light for transmiting semiconductor to be measured be converted into the transmitted spectrum of semiconductor to be measured, spectrometer measurement
The transmitted spectrum of semiconductor to be measured；
Wheel measuring module：Rotatory polarization module one week, change the polarization direction of polarised light, spectrometer measurement is to be measured partly to lead
The transmitted spectrum of different polarization angle in dignity；
Energy gap computing module：Partly led according to the transmitted spectrum calculating of different polarization angle in semiconductor surface to be measured is to be measured
The energy gap of different polarization angle in dignity.
The present invention also provides a kind of device for surveying semiconductor energy gap intra-face anisotropy, including：Light source, polarization mode
Block, specimen holder, spectro-grating, spectrometer；Polarization module, specimen holder, spectro-grating, spectrometer are successively set on the outgoing of light source
Direction, and the center of light source, polarization module, specimen holder, spectro-grating, spectrometer is in same optical axis；The center of specimen holder
Provided with through hole, specimen holder is used to place semiconductor to be measured, and the light that polarization module sends light source is converted into polarised light；It is divided light
The light for appearing semiconductor to be measured is converted into transmitted spectrum by grid；The transmitted spectrum that spectrometer measurement spectro-grating is formed.
Compared with prior art, beneficial effects of the present invention include：By analyzing in semiconductor transmitted spectrum to be measured because of electricity
Son transits to the different absorption characteristics that conduction band possesses from different valence band, utilizes light source, polarization module, specimen holder, spectro-grating, light
Spectrometer is measurable semiconductor energy gap intra-face anisotropy, and wherein light source need not use LASER Light Source, and cost is much low
In polarization trans cis photoisomerization (PL) test system.
Brief description of the drawings
Fig. 1 is a kind of method flow diagram for surveying semiconductor energy gap intra-face anisotropy provided by the invention；
Fig. 2 is a kind of schematic device for surveying semiconductor energy gap intra-face anisotropy provided by the invention.
In accompanying drawing：1st, light source, 2, polarization module, 3, specimen holder, 4, spectro-grating, 5, spectrometer.
Embodiment
In order to make the purpose , technical scheme and advantage of the present invention be clearer, it is right below in conjunction with drawings and Examples
The present invention is further elaborated.It should be appreciated that the specific embodiments described herein are merely illustrative of the present invention, and
It is not used in the restriction present invention.
The invention provides a kind of method for surveying semiconductor energy gap intra-face anisotropy, including：
The light that S1, light source 1 are launched forms polarised light through polarization module 2, and polarised light is penetrated on semiconductor to be measured, is divided
Grating 4 makes the light for transmiting semiconductor to be measured be converted into the transmitted spectrum of semiconductor to be measured, and spectrometer 5 measures semiconductor to be measured
Transmitted spectrum；
S2, rotatory polarization module 2 one weeks, change the polarization direction of polarised light, and spectrometer 5 is measured in semiconductor surface to be measured not
With the transmitted spectrum of polarization angle；
S3, different polarization in semiconductor surface to be measured calculated according to the transmitted spectrum of different polarization angle in semiconductor surface to be measured
The energy gap of angle.
The method of the present invention for surveying semiconductor energy gap intra-face anisotropy, in step S2：
Polarization module 2 often rotates predetermined angle, and spectrometer 5 measures once the transmitted spectrum of semiconductor to be measured.
The method of the present invention for surveying semiconductor energy gap intra-face anisotropy, in step S2：
Light source 1, polarization module 2, spectro-grating 4, the center of spectrometer 5 are in same optical axis, around optical axis rotatory polarization
Module 2.
The method of the present invention for surveying semiconductor energy gap intra-face anisotropy, in step S3：
The transmitted spectrum of a polarization angle in semiconductor surface to be measured is calculated into first differential, the wavelength at differential curve peak value
Corresponding photon energy is the energy gap of polarization angle semiconductor surface to be measured Nei.
The method of survey semiconductor energy gap intra-face anisotropy of the present invention is different from prior art principle.It is existing
The measurement face in optically anisotropic means be polarization trans cis photoisomerization (PL) test system, what it was analyzed is electronics from
The valence band structure information carried in the fluorescence launched after conduction band transitions to different price band.And technical solution of the present invention analysis is
Because electronics from different valence band transits to the different absorption characteristics that conduction band possesses in semiconductor transmitted spectrum to be measured, can equally reach
Characterize optically anisotropic effect in material face.
Technical solution of the present invention based on principle be absorptive transition between valence band to conduction band to lambda1-wavelength and partially
Direction shake with selectivity.In measurement process, the light that light source 1 is sent can turn into polarised light after polarization module 2, be located at
The electronics of different price band may be different to the absorption coefficient of the polarised light Same Wavelength light, and this causes finally partly to lead through to be measured
The transmitted spectrum of body is also variant.Since the light that energy is equal with energy gap, due to shortening with wavelength, light transmission rate
Can drastically it decline.Therefore, we commonly use transmission spectrum trailing edge (ABSORPTION EDGE) to calculate semi-conducting material energy gap.This programme
In, under different polarization angle, transmission spectrum ABSORPTION EDGE can reflect in this direction, the energy gap of semi-conducting material.Then, can lead to
Cross rotation polarization module 2 and reach energy gap in measuring surface in all directions.
The present invention also provides a kind of system for surveying semiconductor energy gap intra-face anisotropy, including：
Single Angle Measurement Module：The light that light source 1 is launched forms polarised light through polarization module 2, and polarised light is penetrated to be measured
On semiconductor, spectro-grating 4 makes the light for transmiting semiconductor to be measured be converted into the transmitted spectrum of semiconductor to be measured, spectrometer 5
Measure the transmitted spectrum of semiconductor to be measured；
Wheel measuring module：Rotatory polarization module 2 one weeks, changes the polarization direction of polarised light, and spectrometer 5 measures to be measured half
The transmitted spectrum of different polarization angle in conductor surface；
Energy gap computing module：Partly led according to the transmitted spectrum calculating of different polarization angle in semiconductor surface to be measured is to be measured
The energy gap of different polarization angle in dignity.
The system of the present invention for surveying semiconductor energy gap intra-face anisotropy, in wheel measuring module：
Polarization module 2 often rotates predetermined angle, and spectrometer 5 measures once the transmitted spectrum of semiconductor to be measured.
The system of the present invention for surveying semiconductor energy gap intra-face anisotropy, in energy gap computing module：
The transmitted spectrum of a polarization angle in semiconductor surface to be measured is calculated into first differential, the wavelength at differential curve peak value
Corresponding photon energy is the energy gap of polarization angle semiconductor surface to be measured Nei.
The present invention also provides a kind of device for surveying semiconductor energy gap intra-face anisotropy, including：Light source 1, polarization mode
Block 2, specimen holder 3, spectro-grating 4, spectrometer 5；Polarization module 2, specimen holder 3, spectro-grating 4, spectrometer 5 are successively set on light
The exit direction in source 1, and the center of light source 1, polarization module 2, specimen holder 3, spectro-grating 4, spectrometer 5 is in same optical axis
On；The center of specimen holder 3 is provided with through hole, and specimen holder 3 is used to place semiconductor to be measured, the light that polarization module 2 sends light source 1
It is converted into polarised light；The light for appearing semiconductor to be measured is converted into transmitted spectrum by spectro-grating 4；The measurement light splitting light of spectrometer 5
The transmitted spectrum that grid 4 are formed.
The device of the present invention for surveying semiconductor energy gap intra-face anisotropy, the covering of the luminescent spectrum scope of light source 1
The energy gap of semiconductor to be measured.Light source 1 is far below LASER Light Source using the white light source such as mercury lamp, cost.
The device of the present invention for surveying semiconductor energy gap intra-face anisotropy, spectro-grating 4 can leniently spectral lights
In separate the light of specific wavelength, the light splitting Wavelength tunable.
Compared with prior art, beneficial effects of the present invention include：By analyzing in semiconductor transmitted spectrum to be measured because of electricity
Son transits to the different absorption characteristics that conduction band possesses from different valence band, utilizes light source, polarization module, specimen holder, spectro-grating, light
Spectrometer is measurable semiconductor energy gap intra-face anisotropy, and wherein light source need not use LASER Light Source, and cost is much low
In polarization trans cis photoisomerization (PL) test system.
The embodiment of present invention described above, is not intended to limit the scope of the present invention..Any basis
The various other corresponding changes and deformation that the technical concept of the present invention is made, should be included in the guarantor of the claims in the present invention
In the range of shield.
Claims (8)
- A kind of 1. method for surveying semiconductor energy gap intra-face anisotropy, it is characterised in that including：S1, the light of light source transmitting form polarised light through polarization module, and polarised light is penetrated on semiconductor to be measured, and spectro-grating makes The light for transmiting the semiconductor to be measured is converted into the transmitted spectrum of semiconductor to be measured, semiconductor to be measured described in spectrometer measurement Transmitted spectrum；S2, rotate the polarization module one week, change the polarization direction of polarised light, semiconductor to be measured described in the spectrometer measurement The transmitted spectrum of different polarization angle in face；It is different in S3, the transmitted spectrum calculating semiconductor surface to be measured according to different polarization angle in the semiconductor surface to be measured The energy gap of polarization angle.
- 2. the method for semiconductor energy gap intra-face anisotropy is surveyed as claimed in claim 1, it is characterised in that step S2 In：The polarization module often rotates predetermined angle, the transmitted spectrum of the spectrometer measurement once semiconductor to be measured.
- 3. the method for semiconductor energy gap intra-face anisotropy is surveyed as claimed in claim 1, it is characterised in that step S3 In：The transmitted spectrum of a polarization angle in the semiconductor surface to be measured is calculated into first differential, the wavelength at differential curve peak value Corresponding photon energy is the energy gap of the polarization angle semiconductor surface to be measured Nei.
- A kind of 4. system for surveying semiconductor energy gap intra-face anisotropy, it is characterised in that including：Single Angle Measurement Module：The light of light source transmitting forms polarised light through polarization module, and polarised light is penetrated in semiconductor to be measured On, spectro-grating makes the light for transmiting the semiconductor to be measured be converted into the transmitted spectrum of semiconductor to be measured, spectrometer measurement The transmitted spectrum of the semiconductor to be measured；Wheel measuring module：Rotate the polarization module one week, change the polarization direction of polarised light, described in the spectrometer measurement The transmitted spectrum of different polarization angle in semiconductor surface to be measured；Energy gap computing module：Calculated according to the transmitted spectrum of different polarization angle in the semiconductor surface to be measured described to be measured The energy gap of different polarization angle in semiconductor surface.
- 5. the system of semiconductor energy gap intra-face anisotropy is surveyed as claimed in claim 4, it is characterised in that wheel measuring In module：The polarization module often rotates predetermined angle, the transmitted spectrum of the spectrometer measurement once semiconductor to be measured.
- 6. the system of semiconductor energy gap intra-face anisotropy is surveyed as claimed in claim 4, it is characterised in that energy gap In computing module：The transmitted spectrum of a polarization angle in the semiconductor surface to be measured is calculated into first differential, the wavelength at differential curve peak value Corresponding photon energy is the energy gap of the polarization angle semiconductor surface to be measured Nei.
- A kind of 7. device for surveying semiconductor energy gap intra-face anisotropy, it is characterised in that including：Light source, polarization module, sample Product seat, spectro-grating, spectrometer；The polarization module, the specimen holder, the spectro-grating, the spectrometer are set gradually In the exit direction of the light source, and the light source, the polarization module, the specimen holder, the spectro-grating, the spectrum The center of instrument is in same optical axis；The center of the specimen holder is provided with through hole, and the specimen holder is used to place semiconductor to be measured, The light that the light source is sent is converted into polarised light by the polarization module；The spectro-grating will appear the semiconductor to be measured Light be converted into transmitted spectrum；The transmitted spectrum that spectro-grating described in the spectrometer measurement is formed.
- 8. the device of semiconductor energy gap intra-face anisotropy is surveyed as claimed in claim 7, it is characterised in that the light source Luminescent spectrum scope covers the energy gap of the semiconductor to be measured.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710984212.1A CN107843567A (en) | 2017-10-20 | 2017-10-20 | A kind of method, system and device for surveying semiconductor energy gap intra-face anisotropy |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710984212.1A CN107843567A (en) | 2017-10-20 | 2017-10-20 | A kind of method, system and device for surveying semiconductor energy gap intra-face anisotropy |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107843567A true CN107843567A (en) | 2018-03-27 |
Family
ID=61662482
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710984212.1A Pending CN107843567A (en) | 2017-10-20 | 2017-10-20 | A kind of method, system and device for surveying semiconductor energy gap intra-face anisotropy |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107843567A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108680557A (en) * | 2018-07-02 | 2018-10-19 | 山东大学 | One kind is based on polarization Raman spectrum to the anisotropic test method of SiC crystal phonon |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5406505A (en) * | 1992-12-15 | 1995-04-11 | Electronic And Telecommunications Research Institute | Method of and apparatus for measuring energy gap of semiconductor |
| JPH07115114A (en) * | 1991-12-13 | 1995-05-02 | Korea Electron Telecommun | Method and apparatus for measurement of semiconductor energy gap |
| JPH07153810A (en) * | 1993-11-29 | 1995-06-16 | Fujitsu Ltd | Estimation method of evaluating semiconductor quantum well and its equipment |
| CN2405216Y (en) * | 1999-12-10 | 2000-11-08 | 中国科学院上海技术物理研究所 | Reflection anisotropic spectral device based upon infrared Fourier spectrometer |
| CN1782695A (en) * | 2004-12-02 | 2006-06-07 | 中国科学院光电技术研究所 | Reflective measurement equipment for band gap characteristic of periodic micron and nano structure |
| CN101609002A (en) * | 2009-07-29 | 2009-12-23 | 新奥光伏能源有限公司 | A kind of new method of measuring optical band gap of semiconductor film material |
| CN201780269U (en) * | 2010-08-20 | 2011-03-30 | 浙江大学 | Photoluminescence scanning measurer |
| CN102937585A (en) * | 2012-11-16 | 2013-02-20 | 中国科学院半导体研究所 | Device and method for measuring forbidden bandwidth of direct band gap semiconductor material |
-
2017
- 2017-10-20 CN CN201710984212.1A patent/CN107843567A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07115114A (en) * | 1991-12-13 | 1995-05-02 | Korea Electron Telecommun | Method and apparatus for measurement of semiconductor energy gap |
| US5406505A (en) * | 1992-12-15 | 1995-04-11 | Electronic And Telecommunications Research Institute | Method of and apparatus for measuring energy gap of semiconductor |
| JPH07153810A (en) * | 1993-11-29 | 1995-06-16 | Fujitsu Ltd | Estimation method of evaluating semiconductor quantum well and its equipment |
| CN2405216Y (en) * | 1999-12-10 | 2000-11-08 | 中国科学院上海技术物理研究所 | Reflection anisotropic spectral device based upon infrared Fourier spectrometer |
| CN1782695A (en) * | 2004-12-02 | 2006-06-07 | 中国科学院光电技术研究所 | Reflective measurement equipment for band gap characteristic of periodic micron and nano structure |
| CN101609002A (en) * | 2009-07-29 | 2009-12-23 | 新奥光伏能源有限公司 | A kind of new method of measuring optical band gap of semiconductor film material |
| CN201780269U (en) * | 2010-08-20 | 2011-03-30 | 浙江大学 | Photoluminescence scanning measurer |
| CN102937585A (en) * | 2012-11-16 | 2013-02-20 | 中国科学院半导体研究所 | Device and method for measuring forbidden bandwidth of direct band gap semiconductor material |
Non-Patent Citations (11)
| Title |
|---|
| HONGTAO YUAN ET AL.: "Polarization-sensitive broadband photodetector using a black phosphorus vertical p-n junction", 《NATURE NANOTECHNOLOGY》 * |
| HONGTAO YUAN ET AL.: "Polarization-sensitive broadband photodetector using a black phosphorus vertical p–n junction", 《NATURE NANOTECHNOLOGY》 * |
| JDPML217: "禁带宽度", 《HTTP://WWW.DOC88.COM/P-4179270382436.HTML》 * |
| LIU XIAOLONG ET AL.: "Resolving the In-Plane Anisotropic Properties of Black Phosphorus", 《SMALL METHODS》 * |
| 傅竹西 等: "ZnO 薄膜的反射、透射光谱及能带结构测量", 《发光学报》 * |
| 唐裕霞: "一维三元光子晶体的偏振特性", 《重庆工商大学学报（自然科学版）》 * |
| 张斌恩 等: "ZnO薄膜的椭圆偏振光谱研究", 《厦门大学学报（自然科学版）》 * |
| 李蓉 等: "一维光子晶体带隙结构对不同偏振态的角度和波长响应", 《物理学报》 * |
| 梁丽萍 等: "基于透射光谱确定溶胶凝胶ZrO2薄膜的光学常数", 《物理学报》 * |
| 褚君浩: "窄禁带半导体的光电跃迁效应", 《激光与红外》 * |
| 谢灯 等: "结合椭圆偏振光谱与傅里叶红外光谱的宽禁带半导体薄膜光学特性表征", 《光散射学报》 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108680557A (en) * | 2018-07-02 | 2018-10-19 | 山东大学 | One kind is based on polarization Raman spectrum to the anisotropic test method of SiC crystal phonon |
| CN108680557B (en) * | 2018-07-02 | 2021-02-19 | 山东大学 | Method for testing phonon anisotropy of SiC crystal based on polarized Raman spectrum |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR101951969B1 (en) | Integrated circuit inspection device | |
| CN107063456B (en) | Time resolution diffraction efficiency of grating spectral measurement device in situ and method | |
| CN103499393B (en) | The measuring method of spectrum | |
| CN102520264A (en) | Tapered fiber-slab waveguide coupling structure-based electric field sensor and measurement system | |
| CN102403247A (en) | Sample Inspection Device And Sample Inspection Method | |
| CN106018193A (en) | Light scattering measurement system and method for particulate matters | |
| CN103368063B (en) | Laser module | |
| Zheng et al. | On‐chip measurement of photoluminescence with high sensitivity monolithic spectrometer | |
| CN106546325A (en) | A kind of spectral correction method of photoptometry test | |
| Hortholary et al. | Multiplex‐multiphoton microscopy and computational strategy for biomedical imaging | |
| CN107843567A (en) | A kind of method, system and device for surveying semiconductor energy gap intra-face anisotropy | |
| CN104048922A (en) | Method for measuring polarization degree and polarization angle of fluorescence spectrum | |
| CN109781709A (en) | Light amplification Raman spectrum detection system based on waveguiding structure | |
| CN102032984A (en) | Method for measuring properties of light of LED | |
| CN109115682A (en) | A kind of spectrometer and its detection method for taking into account liquid and solid content detection | |
| CN103630239B (en) | Resolution improving Fourier micro-spectrometer | |
| CN110082342B (en) | Method and device for measuring concentration of combustion flow field substance component by using laser spectrum | |
| CN109490219A (en) | A kind of terahertz wave band polarization characteristic parameter test device | |
| US9377300B2 (en) | Photoreflectance device | |
| CN206906248U (en) | Raman spectrometer | |
| KR101764704B1 (en) | Apparatus for Measuring Toxin | |
| CN107192675A (en) | A kind of photo-modulated reflectance spectrum measuring detecting system for simply and effectively suppressing fluorescence interference | |
| KR101418308B1 (en) | LED Wavelength Comparator and Method thereof | |
| CN107449764A (en) | A kind of edible safflower seed oil quality quick discriminating system | |
| CN103226100A (en) | Method for testing quantum yield |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20180327 |