CN107681278A - A kind of controllable THz wave reflex control device - Google Patents
A kind of controllable THz wave reflex control device Download PDFInfo
- Publication number
- CN107681278A CN107681278A CN201710819975.0A CN201710819975A CN107681278A CN 107681278 A CN107681278 A CN 107681278A CN 201710819975 A CN201710819975 A CN 201710819975A CN 107681278 A CN107681278 A CN 107681278A
- Authority
- CN
- China
- Prior art keywords
- thz wave
- control device
- unit
- reflex control
- parameter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
- H01Q15/14—Reflecting surfaces; Equivalent structures
- H01Q15/148—Reflecting surfaces; Equivalent structures with means for varying the reflecting properties
Abstract
The invention discloses a kind of controllable THz wave reflex control device.It is including bottom square-shaped metal plate by multiple, the different regular arrangement forms of R parameter cellular construction of intermediate layer square dielectric material and top layer openings metal wheel shape, the cellular construction species or the arrangement regulation of cellular construction that reflex control device is formed by changing can be to control THz wave to be reflected in different forms to different direction.In the present invention, after optimization design difference R parameter cellular construction, it have chosen 4 R parameter cellular constructions, the geometric parameter of 4 cellular constructions except R parameter it is of different sizes in addition to, remaining parameter all same, and the reflected phase difference of this neighboring unit structure of 4 cellular constructions under THz wave vertical irradiation is 90 degree.The present invention has simple in construction, small volume, is easily integrated, broadband, the advantages that control accuracy is high.
Description
Technical field
The present invention relates to a kind of THz wave reflector, more particularly to a kind of controllable THz wave reflex control device.
Background technology
Nearest ten or twenty year, THz wave enjoy scholars to pay close attention to, always are the hot issue of research.And to realize
THz wave is made full use of, must just realize being manipulated to THz wave for simple and flexible.And traditional method such as goes out
One rut, realized using in the different shape of metal surface etching and by the dielectric material of monoblock.But this side
Case is determined it is clear that such as malfunction, device volume is huge, is unfavorable for integrated etc..
With the appearance of broad sense Si Nieer theorems in 2011, this present situation is changed.Broad sense Si Nieer theorems pass through two
Dimension table face introduces discontinuous phase, instead of the phase of spatial summation, is realized using the phase compensation in plane and utilizes two
Super surface is tieed up to manipulate the amplitude of electromagnetic wave and phase.Optics is prepared using this technology, it is several will greatly to reduce device
What size, is easy to integrate.
The cellular construction of composition optics mentioned above is arranged by permanent order, when changing its order, its
Effect then can not in advance, and which results in the control inflexible shortcoming of electromagnetic wave.The present invention devises a kind of controllable Terahertz
Wave reflection controller, the reflex control device is arranged to make up by different R parameter cellular constructions are regular, and each cellular construction
There are approximately equalised reflection amplitudes to the THz wave of vertical incidence, but its neighboring unit structure vertically shines in THz wave
Reflected phase difference under penetrating is 90 degree.As long as change the cellular construction species of composition reflex control device or change composition reflection control
Device cellular construction processed put in order can with control THz wave to any direction reflect.
The content of the invention
The present invention provides a kind of controllable THz wave reflex control device, regular by being carried out to R parameter cellular construction
Be arranged to make up Terahertz reflector, when THz wave vertical irradiation is when on reflector, change the list of composition reflex control device
Meta structure species changes composition reflex control device cellular construction and put in order, and can allow the terahertz of vertical incidence to realize
Hereby wave direction any direction reflects, and realizes the adjustable control to THz wave.
To achieve these goals, the present invention is achieved through the following technical solutions:
The present invention shares 4 basic structural units, and each construction unit is in addition to R parameter, remaining parameter all same.The present invention
4 R parameter values of middle selection are respectively:27um, 30.7um, 38.5um, 51.5um, each parameter value correspond to one it is different
Cellular construction.In order to facilitate description, R parameter value is by we:27um, 30.7um, 38.5um, 51.5um 4 cellular constructions
It is respectively designated as:Unit 1, Unit 2, Unit 3, Unit 4.This 4 units will be shown each under the vertical irradiation of THz wave
From exclusive phase.In certain frequency range, the phase difference between adjacent cells is about 90 degree.We press this 4 units
Certain rule is arranged in two dimensional surface just forms THz wave reflex control device, when THz wave vertical irradiation is controlling
When on device, the arrangement for changing the cellular construction species of composition reflex control device or changing composition reflex control device cellular construction is suitable
Sequence can be so that THz wave reflects to different directions.
The present invention has the advantages that simple in construction, size is small, small volume, is easily integrated, broadband, and control accuracy is high.
Brief description of the drawings
Fig. 1 is the basic cell structure figure of the present invention.
Fig. 2 is that the reflection of the Unit 1, Unit 2, Unit 3, Unit 4 of the present invention respectively under THz wave vertical irradiation is strong
Write music line chart.
Fig. 3 is Unit 1 of the invention, Unit 2, Unit 3, Unit 4 the reflection phase under THz wave vertical irradiation respectively
Position curve map.
Fig. 4 is linear plane ripple vertical irradiation using Unit 1, Unit 2, Unit 3, Unit 4 as the cycle and by the cycle
Along x-axis arrangement form THz wave reflex control device when three-dimensional Far Field Scattering directional diagram, frequency 1.2THz.
Fig. 5 is linear plane ripple vertical irradiation using Unit 1, Unit 2, Unit 3, Unit 4 as the cycle and by the cycle
Along x-axis continuation formed THz wave reflex control device when two-dimentional dual station electric field scatter diagram, frequency 1.2THz.
Fig. 6 is linear plane ripple vertical irradiation using Unit 1, Unit 2, Unit 3, Unit 4 as the cycle and by the cycle
Along y-axis continuation formed THz wave reflex control device when three-dimensional Far Field Scattering directional diagram, frequency 1.2THz.
Fig. 7 is linear plane ripple vertical irradiation using Unit 1, Unit 2, Unit 3, Unit 4 as the cycle and by the cycle
Along y-axis continuation formed THz wave reflex control device when two-dimentional dual station electric field scatter diagram, frequency 1.2THz.
Fig. 8 is linear plane ripple vertical irradiation using Unit 2, Unit 2, Unit 4, Unit 4 as the cycle and by the cycle
Along x-axis continuation formed THz wave reflex control device when three-dimensional Far Field Scattering directional diagram figure, frequency 1.2THz.
Fig. 9 is linear plane ripple vertical irradiation using Unit 2, Unit 2, Unit 4, Unit 4 as the cycle and by the cycle
The double electric field scatter diagrams of fighting of two dimension during the THz wave reflex control device formed along x-axis continuation, frequency 1.2THz.
Figure 10 is linear plane ripple vertical irradiation using Unit 2, Unit 2, Unit 4, Unit 4 as the cycle and by cycle edge
Three-dimensional Far Field Scattering directional diagram during the THz wave reflex control device that y-axis continuation is formed, frequency 1.2THz.
Figure 11 is linear plane ripple vertical irradiation using Unit 2, Unit 2, Unit 4, Unit 4 as the cycle and by cycle edge
Two-dimentional dual station electric field scatter diagram during the THz wave reflex control device that y-axis continuation is formed, frequency 1.2THz.
Figure 12 is linear plane ripple vertical irradiation single with 3*3 Unit 1,3*3 Unit 2,3*3 Unit 3,3*3 individual 4
Member rearranges a super element, the terahertz that the super element is formed in x-axis, y-axis periodic extension counterclockwise successively
Hereby three-dimensional Far Field Scattering directional diagram during wave reflection controller, frequency 1.2THz.
Figure 13 is linear plane ripple vertical irradiation single with 3*3 Unit 1,3*3 Unit 2,3*3 Unit 3,3*3 individual 4
Member rearranges a super element, the terahertz that the super element is formed in x-axis, y-axis periodic extension counterclockwise successively
Hereby two-dimentional dual station electric field scatter diagram during wave reflection controller, frequency 1.2THz.
Embodiment
As shown in figure 1, the basic cell structure includes bottom square-shaped metal block, intermediate layer square medium from top to bottom
Material, top layer openings metal wheel shape.Wherein, the material of bottom square-shaped metal block is copper billet, thickness d=0.2um, a length of p
=110um;The material of intermediate layer square dielectric material is polyimides, thickness h=35um, a length of p=110um;Top layer
The material of open metal wheel shape is copper, thickness d=0.2um, groove width L=20um, metal width W=6um, radius R.
When other geometric parameters are constant, and radius R values are 27um, 30.7um, 38.5um, 51.5um, it has respectively constituted Unit 1,2
Unit, Unit 3, Unit 4.It is bent that 4 units of the above will produce respective amplitude and phase under THz wave vertical irradiation respectively
Line chart, as shown in Figures 2 and 3.From figure 3, it can be seen that reflected phase of the Unit 1 at 1.2THz exists for -80 degree, Unit 2
Reflected phase at 1.2THz is -170 degree, reflected phase of the Unit 3 1.2THz at be -260 spend, Unit 4 are at 1.2THz
Reflected phase for -350 degree, adjacent cells phase difference be 90 degree.In linear plane ripple vertical irradiation reflex control device, change
Form the cellular construction species of reflex control device or form the cellular construction arrangement regulation of controller, can be so that THz wave
Reflected to any direction.
Embodiment 1
Fig. 4 and Fig. 6 respectively show plane of linear polarization ripple vertical irradiation with Unit 1, Unit 2, Unit 3, Unit 4 successively
Be arranged as periodic unit, and the periodic unit arranged along x-axis and with Unit 1, Unit 2, Unit 3, Unit 4 be arranged in order for
Periodic unit, and the three-dimensional far-field pattern under THz wave reflex control device of the periodic unit along y-axis arrangement form.
From fig. 4, it can be seen that vertical incidence plane of linear polarization ripple has been offset in XOZ planes, 34.6 degree of angle is formed with Z axisAs shown in Fig. 5 two dimensional electric field scatter diagrams.Vertical incidence plane of linear polarization ripple is inclined as can be seen from Figure 6
From in the YOZ planes vertical with XOZ, the angle of deviation isSuch as Fig. 7 two dimensional electric fields scatter diagram institute
Show.This is due to the unit of reflex control device shown in pie graph 6 for the reflex control device cellular construction of pie graph 4
Structural arrangement rule is changed, so that its reflection direction is different.And angle of reflection can then pass through broad sense Si Nieerding
Reason(λ is free space wavelength, and Γ is a gradient Cycle Length) can be easy to calculate θ=34.6 °, with
Simulation result is consistent.
Embodiment 2
Fig. 8 and Figure 10 be plane of linear polarization ripple vertical irradiation with Unit 2, Unit 2, Unit 4, Unit 4 be arranged in order for
Periodic unit and the cycle are arranged along x-axis and are arranged in order with Unit 2, Unit 2, Unit 4, Unit 4 as periodic unit simultaneously
And the three-dimensional far-field pattern under THz wave reflex control device of the periodic unit along y-axis arrangement form.Can be very from Fig. 8
Clearly find out that linear polarization THz wave is separated into the XOZ planes THz wave equal on symmetrical two beam intensity of Z axis,
It deviates the angle of Z axisFig. 9 gives corresponding two dimension electricity
Field scatter diagram.And from Figure 10 it will be seen that linear polarization THz wave is isolated to YOZ planes by equalization, and with Z axis pair
Claim equicohesive two beams THz wave, its deviation angle isWithAccordingly
Two dimensional electric field scatter diagram is as shown in figure 11.Fig. 8 and Figure 10 differences are due to the arrangement rule for the cellular construction for forming reflex control device
Caused by rule is different, and Fig. 4 difference is due to then to change the list for forming THz wave reflex control device in Fig. 8 and embodiment 1
Caused by meta structure species.
Claims (4)
1. a kind of controllable THz wave reflex control device, it is characterised in that the controller is had by the cellular construction of different R parameters
Rule in two-dimensional space arrangement form.
2. a kind of controllable THz wave reflex control device according to claim 1, it is characterised in that described 4 are not
Difference in reflection with neighboring unit structure of the R parameter cellular construction under THz wave vertical irradiation is 90 degree.
A kind of 3. controllable THz wave reflex control device according to claim 1, it is characterised in that composition reflex control
The cellular construction of device is made up of bottom square-shaped metal plate, intermediate layer square dielectric material and top layer openings metal wheel shape, its
Middle top layer openings metal wheel shape is printed on the square dielectric material of intermediate layer, and intermediate layer square dielectric material bottom is by bottom
Square-shaped metal plate is completely covered, and the material of metal is copper, and square dielectric material is polyimides.
4. a kind of controllable THz wave reflex control device according to claim 1, it is characterised in that hung down in THz wave
When being directly radiated at reflex control device, change the cellular construction species of composition reflex control device or change composition reflex control device list
Meta structure puts in order, and THz wave will reflect to different directions.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201710819975.0A CN107681278A (en) | 2017-09-07 | 2017-09-07 | A kind of controllable THz wave reflex control device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201710819975.0A CN107681278A (en) | 2017-09-07 | 2017-09-07 | A kind of controllable THz wave reflex control device |
Publications (1)
Publication Number | Publication Date |
---|---|
CN107681278A true CN107681278A (en) | 2018-02-09 |
Family
ID=61134754
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201710819975.0A Pending CN107681278A (en) | 2017-09-07 | 2017-09-07 | A kind of controllable THz wave reflex control device |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN107681278A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113764896A (en) * | 2021-08-26 | 2021-12-07 | 中国计量大学 | Terahertz wave angular deflection controller and method thereof |
CN114280770A (en) * | 2021-11-29 | 2022-04-05 | 上海微波技术研究所(中国电子科技集团公司第五十研究所) | Terahertz all-silicon off-axis superlens and design method thereof |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20090262766A1 (en) * | 2006-10-19 | 2009-10-22 | Houtong Chen | Active terahertz metamaterial devices |
CN102738594A (en) * | 2011-03-31 | 2012-10-17 | 深圳光启高等理工研究院 | Meta-material directional antenna |
CN102790285A (en) * | 2011-05-18 | 2012-11-21 | 深圳光启高等理工研究院 | Linear polarized wave transmitting-receiving device |
CN106410421A (en) * | 2016-10-26 | 2017-02-15 | 东南大学 | Space wave-to-surface wave function device with controlled polarization |
CN106410418A (en) * | 2016-08-11 | 2017-02-15 | 东南大学 | Dual-functional anisotropic electromagnetic encoding metamaterial applied to microwave band, and basic unit structure and design method |
CN206180121U (en) * | 2016-10-26 | 2017-05-17 | 东南大学 | Space wave that polarizes controlledly changes surface wave functional device |
-
2017
- 2017-09-07 CN CN201710819975.0A patent/CN107681278A/en active Pending
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20090262766A1 (en) * | 2006-10-19 | 2009-10-22 | Houtong Chen | Active terahertz metamaterial devices |
CN102738594A (en) * | 2011-03-31 | 2012-10-17 | 深圳光启高等理工研究院 | Meta-material directional antenna |
CN102790285A (en) * | 2011-05-18 | 2012-11-21 | 深圳光启高等理工研究院 | Linear polarized wave transmitting-receiving device |
CN106410418A (en) * | 2016-08-11 | 2017-02-15 | 东南大学 | Dual-functional anisotropic electromagnetic encoding metamaterial applied to microwave band, and basic unit structure and design method |
CN106410421A (en) * | 2016-10-26 | 2017-02-15 | 东南大学 | Space wave-to-surface wave function device with controlled polarization |
CN206180121U (en) * | 2016-10-26 | 2017-05-17 | 东南大学 | Space wave that polarizes controlledly changes surface wave functional device |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113764896A (en) * | 2021-08-26 | 2021-12-07 | 中国计量大学 | Terahertz wave angular deflection controller and method thereof |
CN113764896B (en) * | 2021-08-26 | 2023-08-29 | 中国计量大学 | Terahertz wave angle deflection controller and method thereof |
CN114280770A (en) * | 2021-11-29 | 2022-04-05 | 上海微波技术研究所(中国电子科技集团公司第五十研究所) | Terahertz all-silicon off-axis superlens and design method thereof |
CN114280770B (en) * | 2021-11-29 | 2023-08-11 | 上海微波技术研究所(中国电子科技集团公司第五十研究所) | Terahertz full-silicon off-axis super lens and design method thereof |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
Lin et al. | Low-profile wideband metasurface antennas using characteristic mode analysis | |
US20200328526A1 (en) | Surface wave polarization converter | |
Epstein et al. | Passive lossless Huygens metasurfaces for conversion of arbitrary source field to directive radiation | |
Asadchy et al. | Functional metamirrors using bianisotropic elements | |
CN106410425B (en) | Ultra-wide-band full-polarization full-angle rotation parabolic gradient electromagnetic stealth super-surface and design method thereof | |
Cuesta et al. | Planar broadband Huygens’ metasurfaces for wave manipulations | |
CN105932425B (en) | Surpass the dual polarization multifunction device and design method on surface based on anisotropy | |
Ozden et al. | Metamaterial based broadband RF absorber at X-band | |
CN104752840B (en) | A kind of Terahertz broadband random surface | |
CN108957429A (en) | One kind is based on ULTRA-WIDEBAND RADAR scattering section decrement checkerboard configuration and ULTRA-WIDEBAND RADAR | |
CN105633588A (en) | Polarization-insensitive meta-material resonance apparatus with adjustable guided-mode resonance quality factor | |
CN106129632A (en) | Bandwidth can the random surface of careful design | |
CN102299422A (en) | Zero-refractive-index flat lens antenna based on magnetic resonance structure | |
CN107681278A (en) | A kind of controllable THz wave reflex control device | |
Wang et al. | Gradient metasurface for four-direction anomalous reflection in terahertz | |
Li et al. | Bifunctional circularly-polarized lenses with simultaneous geometrical and propagating phase control metasurfaces | |
JP2006517073A (en) | Phase array antenna and inter-element mutual coupling control method | |
Wang et al. | Hybrid-phase approach to achieve broadband monostatic/bistatic RCS reduction based on metasurfaces | |
CN107275792A (en) | A kind of full angle transparent transmission material of Terahertz frequency range | |
CN109324361B (en) | Ultra-wide waveband near-perfect absorber and manufacturing method thereof | |
CN204696244U (en) | A kind of 1-bit microwave anisotropy electromagnetism coding Meta Materials | |
Wang et al. | Multi-octave radar cross section reduction via integrated dispersion engineering of polarization-conversion metasurface and metamaterial absorber | |
CN204243210U (en) | Paster antenna | |
Ataloglou et al. | Synthesis of modulated dielectric metasurfaces for precise antenna beamforming | |
Droulias et al. | Reconfigurable Intelligent Surface: MIMO or radiating sheet? |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20180209 |
|
WD01 | Invention patent application deemed withdrawn after publication |