CN107677380A - A kind of colorful digital silicon photo multiplier device - Google Patents
A kind of colorful digital silicon photo multiplier device Download PDFInfo
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- CN107677380A CN107677380A CN201711041075.4A CN201711041075A CN107677380A CN 107677380 A CN107677380 A CN 107677380A CN 201711041075 A CN201711041075 A CN 201711041075A CN 107677380 A CN107677380 A CN 107677380A
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 92
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 92
- 239000010703 silicon Substances 0.000 title claims abstract description 92
- 238000012545 processing Methods 0.000 claims abstract description 32
- 238000000034 method Methods 0.000 claims description 21
- 230000008569 process Effects 0.000 claims description 14
- 238000005516 engineering process Methods 0.000 claims description 13
- 230000005540 biological transmission Effects 0.000 claims description 11
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 235000012431 wafers Nutrition 0.000 claims description 6
- 230000005611 electricity Effects 0.000 claims description 2
- 238000001514 detection method Methods 0.000 abstract description 18
- 230000004907 flux Effects 0.000 abstract description 7
- 230000035945 sensitivity Effects 0.000 abstract description 7
- 239000003086 colorant Substances 0.000 abstract description 5
- 238000003384 imaging method Methods 0.000 description 6
- 230000005622 photoelectricity Effects 0.000 description 6
- 238000003860 storage Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 239000002210 silicon-based material Substances 0.000 description 4
- 238000004891 communication Methods 0.000 description 3
- 238000011161 development Methods 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 238000011160 research Methods 0.000 description 3
- 239000000523 sample Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 238000003491 array Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 230000005865 ionizing radiation Effects 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 238000012827 research and development Methods 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 238000000149 argon plasma sintering Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 210000004209 hair Anatomy 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 230000005499 meniscus Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000009206 nuclear medicine Methods 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000000171 quenching effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 210000001525 retina Anatomy 0.000 description 1
- 238000011896 sensitive detection Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000012995 silicone-based technology Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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- G—PHYSICS
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- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
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Abstract
The invention discloses a kind of colorful digital silicon photo multiplier device, including the pel array being made up of some rows and several columns colorful digital silicon photoelectric multiplier pixel cell, and for reading the read module of data and address information in each colorful digital silicon photoelectric multiplier pixel cell.Wherein, each colorful digital silicon photoelectric multiplier pixel cell is made up of the three Layer Detection devices to blue and green light and red light sensitiveness and the signal processing circuit layer below detector layer successively from top to bottom.The invention has the advantages that red, green, blue three primary colours can be detected in single pixel unit, whole color informations just can be sensed using a pixel, so as to avoid the color distortion of image；With the other sensitivity of single-photon-level, relatively low luminous flux field of detecting can be conveniently used in；Can be achieved signal digitlization in single pixel rank, therefore and need not be complicated reading circuit, the power consumption of device can be substantially reduced.
Description
Technical field
The present invention relates to technical field of semiconductors, more particularly to a kind of colorful digital silicon photoelectricity times for photon detection
Increase device.
Background technology
The research that silicon-based technologies are applied to low photon flux sensor starts from later stage the 1970s earliest, studies people
Equally distributed metal-resistance-semiconductor (Metal-Resistor-Semiconductor, MRS) that member is spatially set
Microsensor array have individually be quenched with common output, realize the detection to small throughput photon.This sensor is just
It is the silicon photoelectric multiplier (Silicon Photomultiplier, SiPM) being known later.From that time, SiPM
Research and development just occupy the half of the country of low photon flux detector research field, the collaborative work of many researchers is SiPM's
Development is made that the contribution of uniqueness.Modern SiPM is the array formed by being operated in the PN junction of Geiger mode angular position digitizer (also referred to as infinitesimal)
Structure, each infinitesimal, which is connected, independent passive is quenched resistance.SiPM can show clearly single photon response at room temperature
And significant photon number resolution capability.Contemporaneity, single-photon avalanche diode (Single Photon Avalanche
Diode, SPAD) also appear in single photon detection field.SPAD is also the single-photon detector for being operated in Geiger mode angular position digitizer, it
Optical detection part is equivalent to a SiPM infinitesimal.SPAD domain is different from SiPM domain, because SPAD is also
Electronic circuitry part is actively quenched including integrated.In other words, SiPM is equivalent to a passive SPAD array that form is quenched.
SiPM and SPAD substitution photomultipliers (Photomultiplier Tube, PMT) should as low photon flux sensor
For numerous areas, such as from based on the high-energy physics of scintillation crystal to nuclear medicine facility, radiation detector, from laser radar system
Unite the trace for there are them to apply to wearable device etc..
Can research direction newest SiPM and SPAD be to probe into realize photon detection under the conditions of standard CMOS process.This
Mean that CMOS technology may allow reading circuit and photodetector is integrated on a single chip, so as to which power consumption be greatly reduced
And simplify the operating condition of detector.In addition, can also reduce the manufacturing cost of sensor using CMOS technology, thus allow for imitating
Stable commercial production.Produced under the conditions of standard CMOS process modern SiPM to develop advanced small throughput photon and
Ionizing radiation integrated detector has critically important influence.And in the future can also be by CMOS 3D interconnection techniques applied to SiPM's
Research and development, this can significantly improve detection efficient, as Globalfoundries/Tezzaron 130nm process nodes are showed
Product is such.Using 3D interconnection techniques, new digital snowslide dot structure can also be further developed, this structure can be realized
The independent reading of each pixel.Using 3D interconnection techniques, and it is respectively used to small throughput photon detection and ionizing radiation detection
Snowslide pixel imaging device and snowslide pixel tracker had relevant report.By the scheme of CMOS avalanche photodides
Solution method applied to digital silicon photomultiplier has had displaying in 800nm and 350nm process nodes.
CMOS process rule is limited to, by the sensor performance of CMOS technology technological development by a definite limitation.SiPM
It can be assembled with SPAD in knot edge due to high electric field and local punch-through occur.Along the photosensitive area surrounding of each infinitesimal
Protection ring structure is set to obtain uniform electric field in whole photosensitive region, so as to alleviate partial breakdown problem.CMOS works
Skill provides the scheme of the such protection ring structure of several realizations, on 800nm to 90nm CMOS technology node, has
SPAD, or SPAD arrays, or SiPM detecting structures realize protection ring scheme using layout design technology, and are used in snowslide
Puncture the detection that single photon signal is carried out under bias condition.But still there are two main restrictive conditions using CMOS technology：
I.e. compared with the business SiPM manufactured based on customization technique, the SiPM manufactured using CMOS technology has higher dark counting
Rate and relatively low detection efficient.One kind, which possible solution, is, the trap concentration distribution of standard CMOS process is adjusted, and
Adjustment mask allows high-doped zone mutually to be overlapped with doped regions.
SPAD arrays or a major limitation of digital SiPM development are that they are not to a certain specific wavelength (such as feux rouges
Or blue light) photon-sensitive to be measured.One photon being detected can produce a signal pulse, but signal pulse with it is incident
Photon energy it is unrelated.It is to solve this problem using cmos image sensor technology that one kind, which possible solution,.CMOS
The basic structure of imaging sensor is a PN junction diode, but it and be not operate at Geiger mode angular position digitizer.To by such PN junction
The two-dimensional matrix that diode is formed, which carries out data read-out, can form digital picture.For cmos image sensor, each
70% area is all included occupied by amplifier, reshaper, comparator and digital unit, only by reading circuit in pixel
30% area belongs to sensitive detection unit.The color information of image is by setting Bayer color filter on detection array
Obtain.Bayer color filter is made up of small meniscus lens, and detected photon can be focused on light sensitive area by it
Domain.By the image sensor surface that Bayer color filter is formed as a mosaic array, each pixel by it is red, green,
Blue three kinds of optical filters covering, the quantity of wherein green color filter are two times of red and blue color filter quantity.So set
The reason for be human eye higher than red and blue image to the resolution capability of green image details.Bayer color filter can be with mould
The vision response of anthropomorphic eyes retina, its peak sensitivity are 550 nanometers.
Cmos image sensor has application and exploitation in many fields at present, and its scope can prolong from digital camera
Reach astronomical telescope.But cmos image sensor still has disadvantages that：Firstly, since it is by simple PN
Into probe unit, so it is to single photon and insensitive；Secondly as reading circuit occupies larger area, so it
Sensitivity it is not high；Furthermore the metal interconnecting wires on imaging sensor can produce the crosstalk and light scattering between halation, pixel
Effect, this can have a strong impact on the total quality of imaging.
The content of the invention
Present invention seek to address that above technical problem, and a kind of colorful digital silicon photo multiplier device is provided, to realize
The colour imaging of silicon photo multiplier device, and overcome that cmos image sensor is insensitive to single photon, sensitivity is low, imaging effect
The problem of bad.To achieve the above object, the present invention provides following technical scheme：
A kind of colorful digital silicon photo multiplier device, it is characterised in that including by some rows and several columns colorful digital silicon
The pel array that photoelectric multiplier pixel cell is formed, and for reading each colorful digital silicon photoelectric multiplier pixel cell
In data and address information read module；Each colorful digital silicon photoelectric multiplier pixel cell is from top to bottom successively
Including the first detector layer, the second detector layer, the 3rd detector layer and signal processing circuit layer positioned at the 4th layer；The reading
Modulus block is located in signal processing circuit layer；First detector layer, the second detector layer, the 3rd detector layer are and signal
There is electrical connection between process circuit layer.
Preferably, the first detector layer in each colorful digital silicon photoelectric multiplier pixel cell, the second detection
Detector in device layer and the 3rd detector layer is formed by the single-photon avalanche diode being operated under Geiger mode angular position digitizer；Described
One detector layer is to sensitive to blue light；Second detector layer is to green light sensitive；3rd detector layer is to red light sensitiveness.
Preferably, the signal processing circuit layer also includes being used to each single-photon avalanche diode snowslide shape be quenched
Unit, the examination for the analog signal of each single-photon avalanche diode output to be changed into data signal is quenched in state
The memory cell of unit, the data signal exported for storing the discriminator unit, and for controlling the detector, reading
Module and the input/output interface of signal processing circuit work.
Preferably, unit and the monochromatic light in first, second, third detector layer is quenched in the process circuit layer
Sub- avalanche photodide electrical connection；The signal output part of the single-photon avalanche photodiode electrically connects with discriminator unit
Connect；The signal output part of the discriminator unit is electrically connected with memory cell.
Preferably, it is described be quenched in unit and each colorful digital silicon photoelectric multiplier pixel cell first, second, the
Three detector layers correspond setting respectively；In the discriminator unit and each colorful digital silicon photoelectric multiplier pixel cell
First, second, third detector layer corresponds setting respectively；The memory cell and each colorful digital silicon photoelectric multiplier
First, second, third detector layer in pixel cell corresponds setting respectively.
Preferably, all single-photon avalanche diodes in first, second, third detector layer share same
Voltage input end.
Preferably, the read module includes address location, control unit and output unit；The address location to
Determine the position of each colorful digital silicon photoelectric multiplier pixel cell；Described control unit controls each colorful digital silicon photoelectricity
The data of multiplier pixel cell and the transmission of address output order；The output unit is transmitting each colorful digital
The data and corresponding address information that silicon photoelectric multiplier pixel cell is sent.
Preferably, first, second, third detector layer and signal processing circuit layer are enterprising in different wafers respectively
Row manufacture, then it is thinned by wafer and bonding techniques makes the detector layer and signal processing circuit layer be stacked；Institute
Electrical connection is stated to realize by the way of silicon hole.
Preferably, first, second, third detector layer and signal processing circuit layer are real using CMOS technology manufacture
It is existing.
The beneficial effects of the invention are as follows：First, colorful digital silicon photo multiplier device can be visited in single pixel unit
Red, green, blue three primary colours are measured, just can sense whole color informations using a pixel, the lenticule for not only eliminating complexity (is visitd
Ear optical filter) processing step, and avoid the color distortion of image；Secondly as detector layer is located at surface and reads mould
Block and data processing circuit are located at below detecting layer, read module and the face of data processing circuit and vacant photo sensitive area
Product, the panel detector structure of three-dimensional, which is laid out, causes colorful digital silicon photo multiplier device to have higher fill factor, curve factor, thus has
There is higher sensitivity, relatively low luminous flux field of detecting can be conveniently used in；Again, single-photon avalanche photoelectricity two is had benefited from
The high internal gain of pole pipe, pixel data read and do not need the reading circuit of complexity；Finally, due to realized in pixel scale
The digitlization of output signal, can not only enormously simplify the complexity of follow-up signal process circuit, and can also drop
The power consumption of low colorful digital silicon photo multiplier device.
Brief description of the drawings
With reference to embodiment and accompanying drawing, the present invention is described in detail, wherein：
Fig. 1 is colorful digital silicon photo multiplier device vertical structure schematic diagram；
Fig. 2 is the schematic equivalent circuit of colorful digital silicon photoelectric multiplier pixel cell；
Fig. 3 is colorful digital silicon photo multiplier device schematic top plan view；
In figure, the implication of each label is as follows：The detector layers of 10- first；Photodetector in the detector layers of 11- first；
The detector layers of 20- second；Photodetector in the detector layers of 21- second；The detector layers of 30- the 3rd；The detector layers of 31- the 3rd
In photodetector；40- signal processing circuit layers；Unit is quenched in 41-；42- discriminator units；43- memory cell；50- is colored
Digital silicon photomultiplier pixel cell.
Embodiment
As shown in Figure 1, a kind of colorful digital silicon photo multiplier device, it is characterised in that including by some rows and some
The pel array that row colorful digital silicon photoelectric multiplier pixel cell 50 is formed, and for reading each colorful digital silicon photoelectricity
The read module of data and address information in multiplier pixel cell 50；Each colorful digital silicon photoelectric multiplier pixel
Unit 50 includes the first detector layer 10, the second detector layer 20, the 3rd detector layer 30 and positioned at the 4th successively from top to bottom
The signal processing circuit layer 40 of layer；The read module is located in signal processing circuit layer 40；First detector layer 10,
Two detector layers 20, the 3rd detector layer 30 have electrical connection between signal processing circuit layer 40.
As a preferable scheme, the first detection in each colorful digital silicon photoelectric multiplier pixel cell 50
The single photon that detector in device layer 10, the second detector layer 20 and the 3rd detector layer 30 snows by Geiger mode angular position digitizer is operated in
Collapse diode composition；First detector layer 10 is to sensitive to blue light；Second detector layer 20 is to green light sensitive；Described
Three detector layers 30 are to red light sensitiveness.Each colorful digital silicon photoelectric multiplier pixel cell 50 in the present invention comprising pair
First detector layer 10 of sensitive to blue light, the second detector layer 20 to green light sensitive and the 3rd detector to red light sensitiveness
Layer 30.For example, with the structure of M rows N row (M and N value are positive integer) colorful digital silicon photoelectric multipliers pixel cell 50
Into device exemplified by, if calculating, i.e. respectively have (M × N) respectively in first, second, third detector layer with the number of detector
Individual detector, amount to the individual single-photon avalanche photodiode detectors of 3 (M × N).It should be noted that the first all detection
Photodetector 11 in device layer 10 is respectively positioned in same level, for the photodetector of the second all detector layers 20
21 and the 3rd all detector layers 30 in photodetector 31 and in this way, i.e. three detector layers (10,20,30) are adhered to separately
In three different horizontal planes.For single colorful digital silicon photoelectric multiplier pixel cell 50, the first detector layer 10,
Photodetector (11,21,31) in two detector layers 20 and the 3rd detector layer 30 is respectively positioned on same vertical curve, i.e., single
The photosurface position of three Layer Detection devices in pixel is to overlap.In order to further improve the detection performance of detector, specific
During implementation, the detector in same layer can be isolated from each other and come；The scheme that can be used is, between adjacent detector
Groove is set, photoresistance barrier material is then filled in groove, to suppress interfering between adjacent pixel unit.
As a preferable scheme, the signal processing circuit layer 40 also includes being used to each single photon snow be quenched
Collapse diode avalanche state is quenched unit 41, for the analog signal of each single-photon avalanche diode output to be converted
The memory cell 43, Yi Jiyong of discriminator unit 42 into data signal, the data signal for storing the discriminator unit output
In the input/output interface for controlling the detector, read module and signal processing circuit work.Especially, the process circuit
The 40 single-photon avalanche photoelectricity two being quenched in unit 41 and first, second, third detector layer (10,20,30) in layer
Pole pipe is electrically connected；The signal output part of the single-photon avalanche photodiode is electrically connected with discriminator unit 42；The Zhen
The signal output part of other unit 42 is electrically connected with memory cell 43.
It is described to be quenched in unit 41 and each colorful digital silicon photoelectric multiplier pixel cell as a preferable scheme
First, second, third detector layer correspond setting respectively；The discriminator unit 42 and each colorful digital silicon photoelectricity times
First, second, third detector layer increased in device pixel cell corresponds setting respectively；The memory cell 43 and each coloured silk
First, second, third detector layer in color digital silicon photomultiplier pixel cell corresponds setting respectively.In the present invention
Colorful digital silicon photoelectric multiplier pixel cell 50 schematic equivalent circuit as shown in Figure 2.It is every in pixel cell 50
41, discriminator units 42 of unit and a memory cell 43 is quenched in one detector corresponding one.Incide detector layer
Light detected by single-photon avalanche photodiode after, through the quenching effect of unit 41 is quenched, electric impulse signal can be produced；
The electric impulse signal belongs to analog signal, after the processing of discriminator unit 42, the analog pulse signal can be converted into Digital Logic
Signal, and be ultimately stored in memory cell 43.Equally formed with M row N row colorful digital silicon photoelectric multipliers pixel cell 50
Device exemplified by, each pixel cell 50 possesses three and 41, three discriminator units 42 of unit and three memory cell 43 is quenched, whole
Individual device adds up to that 3 (M × N) are individual to be quenched the individual individual memory cell 43 of discriminator unit 42 and 3 (M × N) of unit 41,3 (M × N).For
For single pixel unit, same discriminator unit 42 and same memory cell 43 can also be shared by the way of multiplexing.
Although can so reduce the complexity of device circuitry, signal readout time can be caused to extend, and can not be read in real time
Take, reduce the performance of device on the contrary.
As a preferable scheme, all single photons in first, second, third detector layer (10,20,30)
Avalanche diode shares same voltage input end.Colorful digital silicon photo multiplier device schematic top plan view proposed by the present invention
As shown in Figure 3.
As a preferable scheme, the read module includes address location, control unit and output unit；It is described
Address location is determining the position of each colorful digital silicon photoelectric multiplier pixel cell；Described control unit controls each coloured silk
The color information of color digital silicon photomultiplier pixel cell and the transmission of address output order；The output unit is transmitting
The color information and corresponding address information that each colorful digital silicon photoelectric multiplier pixel cell is sent.
As a preferable scheme, the address location includes line decoder and column decoder；Each line decoder
Input includes a row gating signal input and X row address information input；Each line decoder also includes 2XIt is individual defeated
Go out end, the memory cell of each output end of line decoder respectively with each colorful digital silicon photoelectric multiplier pixel cell communicates
Connection, to determine the row address information of each colorful digital silicon photoelectric multiplier pixel cell in the devices；Each column decoder
Including a column selection pass signal input, X column address information input and 2XIndividual output end, each output of column decoder
End communicates to connect with the memory cell of each colorful digital silicon photoelectric multiplier pixel cell in device respectively, each to determine
The column address information of colorful digital silicon photoelectric multiplier pixel cell in the devices；The row address information input of line decoder simultaneously
End, row gating signal input, column address information input, the column selection pass signal input of column decoder lead to control unit
Letter connection to receive the driving of control unit, control the gating of the colorful digital silicon photoelectric multiplier pixel cell for specifying address with
And the transmission of color information, address information.It is single for 3 storages in each colorful digital silicon photoelectric multiplier pixel cell
For member, their input is connected in parallel with each other, i.e., the memory address information in same pixel cell is identical.
As a preferable scheme, described control unit communicates to connect with address location and specifies address for controlling
The transmission of the gating and corresponding color information and address output order of colorful digital silicon photoelectric multiplier pixel cell；Control is single
Member prestores the address information of colorful digital silicon photoelectric multiplier pixel cell color information output logical order, including the choosing of row
Messenger output end, a column selection messenger output end, at least X row address information output end and at least X column address letter
Cease output end.The row gating signal output end of control unit and the row gating signal input of line decoder communicate to connect, control
X row address information output end of unit is respectively via address wire communication connection corresponding with foregoing X row address information input；
The column selection messenger output end of control unit and the column selection pass signal input of column decoder communicate to connect, X of control unit
Column address information output end is respectively via address wire communication connection corresponding with foregoing X column address information input.Control unit
Whether work, i.e., believed by sending row address strobe via rwo address strobe signals, column address gating signal control address location
Number, column address gating signal cause row, column decoder to be in working condition, then control unit is defeated via row address information again
Go out end and the address information to prestore is sent in running order row, column and translated by column address information output end by address wire
In code device, the gating of specified colorful digital silicon photoelectric multiplier pixel cell is realized by the common cooperation of row, column decoder.
After specified colorful digital silicon photoelectric multiplier pixel cell is strobed, the color that will be stored immediately in corresponding memory cell
Multimedia message and corresponding address information are exported by output unit.Row, column address signal output end sends the logic of signal
Order follows the control of pre-stored address information in control unit, so that colorful digital silicon photoelectric multiplier pixel cell is according to address
Logical order in information carries out the transmission of color information and address information.
The logical order of the address information output to be prestored in above-mentioned control unit is only it is required that each in device store list
Color information and address information in member can obtain output, for the ease of effectively determining the output shape of each memory cell
State, data-out logic order can be to gate each memory cell one by one in address information, and each storage is carried out successively to realize
The reading of color information in unit and the transmission of address；Or, control gates successively positioned at the memory cell of same row, with line by line
The reading for the color information entered in line storage unit and the transmission of address；Or, control is selected successively positioned at the memory cell of same row
It is logical, to enter the transmission of the reading of the color information in line storage unit and address by column.Because line decoder receives row address choosing
Messenger may recognize that the memory cell of any row in colorful digital silicon photo multiplier device, and column decoder receives column address choosing
Messenger may recognize that any array storage unit in colorful digital silicon photo multiplier device, therefore control unit is according to the ground to prestore
The logical order of location information can control the transmission of rwo address strobe signals and column address gating signal, and then control device successively
In memory cell the output of color information and address information is carried out according to the logical order of determination.Output unit with it is described each
The communication connection of colorful digital silicon photoelectric multiplier pixel cell is with the colorful digital silicon photoelectric multiplier pixel list of specified address
After member gating, color information and corresponding address information that the colorful digital silicon photoelectric multiplier pixel cell is sent are transmitted.
Specifically, the output end of each memory cell is communicated to connect with specified coloured silk via data/address bus and the output unit respectively
Color information and address information after color digital silicon photomultiplier pixel cell is strobed in transmission respective memory unit.
A kind of operation principle of colorful digital silicon photo multiplier device proposed by the present invention is, using silicon materials to different ripples
The sink effect of long light, first, second, third detector layer (10,20,30) are like the pseudo-colour filtering of a vertical distribution
Device.Because silicon materials have very high absorption coefficient to blue light, so being in the first detector layer 40 of pixel cell top
It is most sensitive to blue light, thus be mainly used to detect blue light；When light incides the second detector layer 30 of centre, light
In just only remaining feux rouges and green glow, in this detecting layer, silicon materials have higher absorption coefficient, thus mainly quilt to green glow
For detecting green glow；When light incides three detector layer 20 of lower floor, just only feux rouges in light, the 3rd detector
20 pairs of feux rouges of layer can be detected well.So, color information (the i.e. R in light<It is red>、G<It is green>、B<It is blue>Color point
Amount) it can be extracted by first to third layer detector, and be stored in the memory cell in pixel cell.Firstth,
2nd, the function of the 3rd detector layer is exactly a vertical color filter, it is possible to achieve the separation of red, green, blue three primary colours, is eliminated
Complicated cumbersome lenticule (Bayer filter) processing step.Because red, green, blue three primary colours can be entered in a pixel simultaneously
Row extraction, thus avoid the color distortion of image.Simultaneously because the detector in first, second, third detector is work
Make single-photon avalanche diode under Geiger mode angular position digitizer, there is higher internal gain, therefore and do not need signal amplification circuit,
The complexity of pixel cell signal processing circuit can so be greatly simplified.Due to each colorful digital silicon photoelectric multiplier
Pixel cell can export undistorted color information, i.e., each pixel can obtain color information, thus ought incite somebody to action
, can be to pass through letter after color information in colorful digital silicon photo multiplier device in each pixel cell is read out
Digital circuit processing in number process circuit floor 40 restores coloured image.
As shown in Figure 2, each pixel cell in a kind of colorful digital silicon photoelectric multiplier proposed by the present invention is equal
Belong to a single probe unit, each other independently of each other, easily can be controlled and operate.By signal transacting electricity
Road floor is arranged in the bottom of detector layer, the dot structure layout of three-dimensional, and it is larger photosensitive to ensure that detector pixel has
Area, so pixel cell has higher fill factor, curve factor, thus there is higher sensitivity, can be widely applied to relatively low light
Flux field of detecting.
As a preferable scheme, first, second, third detector layer (10,20,30) and signal processing circuit
Layer 40 is manufactured on different wafers respectively, is then thinned by wafer and bonding techniques make the detector layer and signal
Process circuit layer is stacked；The electrical connection is realized by the way of silicon hole.In view of silicon materials to different wave length
The sink effect of light, the thickness of the first detector layer 10 should be controlled between 0.2 μm to 1 μm；First detector layer 10 and
The gross thickness of two detector layers 20 should be less than 2 μm, and the thickness of the second detector layer 20 should be controlled between 0.2 μm to 1 μm.
As a preferable scheme, first, second, third detector layer (10,20,30) and signal processing circuit
Layer 40 uses CMOS technology manufacture to realize, with as far as possible easy, efficient, while is achieved at low cost the present invention.
The invention has the advantages that：1st, red, green, blue three primary colours are may detect in single pixel unit, profit
It just can sense whole color informations with a pixel, not only eliminate lenticule (Bayer filter) processing step of complexity, and
And avoid the color distortion of image；2nd, due to detector layer is located at surface and read module and data processing circuit are positioned at detection
Layer lower section, read module and data processing circuit and the area of vacant photo sensitive area, the panel detector structure layout of three-dimensional
So that colorful digital silicon photo multiplier device has higher fill factor, curve factor, thus there is higher sensitivity, can be easily
Applied to relatively low luminous flux field of detecting；3rd, the high internal gain of single-photon avalanche photodiode is had benefited from, pixel data is read
Go out and do not need the reading circuit of complexity；4th, not only can be big due to being to realize the digitlization of output signal in pixel scale
It is big to simplify the complexity of follow-up signal process circuit, and the power consumption of colorful digital silicon photo multiplier device can also be reduced.
Above-described embodiment is for ease of those skilled in the art it will be appreciated that and being described using the present invention
's.Person skilled in the art obviously easily can make various modifications to these embodiments, and described herein
General Principle is applied in other embodiment without by performing creative labour.Therefore, the invention is not restricted to above-described embodiment,
Those skilled in the art do not depart from improvement that scope made and modification all should be in this hairs according to the announcement of the present invention
Within bright protection domain.
Claims (9)
1. a kind of colorful digital silicon photo multiplier device, it is characterised in that including by some rows and several columns colorful digital silicon light
The pel array that electric multiplier pixel cell is formed, and for reading in each colorful digital silicon photoelectric multiplier pixel cell
Data and address information read module；Each colorful digital silicon photoelectric multiplier pixel cell wraps successively from top to bottom
Include the first detector layer, the second detector layer, the 3rd detector layer and the signal processing circuit layer positioned at the 4th layer；The reading
Module is located in signal processing circuit layer；First detector layer, the second detector layer, the 3rd detector layer with signal
There is electrical connection between reason circuit layer.
A kind of 2. colorful digital silicon photo multiplier device according to claim 1, it is characterised in that each colored number
The detector in the first detector layer, the second detector layer and the 3rd detector layer in word silicon photoelectric multiplier pixel cell is equal
It is made up of the single-photon avalanche diode being operated under Geiger mode angular position digitizer；First detector layer is to sensitive to blue light；Described second
Detector layer is to green light sensitive；3rd detector layer is to red light sensitiveness.
A kind of 3. colorful digital silicon photo multiplier device according to claim 2, it is characterised in that the signal transacting electricity
What road floor also included being used for being quenched each single-photon avalanche diode avalanche condition is quenched unit, for by each list
The analog signal of photon avalanches diode output changes into the discriminator unit of data signal, for storing the discriminator unit output
Data signal memory cell, and for control the detector, read module and signal processing circuit work input
Output interface.
A kind of 4. colorful digital silicon photo multiplier device according to claim 3, it is characterised in that the process circuit layer
In the single-photon avalanche photodiode being quenched in unit and first, second, third detector layer be electrically connected；It is described
The signal output part of single-photon avalanche photodiode is electrically connected with discriminator unit；The signal output part of the discriminator unit with
Memory cell is electrically connected.
A kind of 5. colorful digital silicon photo multiplier device according to claim 4, it is characterised in that it is described be quenched unit with
First, second, third detector layer in each colorful digital silicon photoelectric multiplier pixel cell corresponds setting respectively；Institute
State discriminator unit and the first, second, third detector layer difference one in each colorful digital silicon photoelectric multiplier pixel cell
One is correspondingly arranged；The memory cell is visited with first, second, third in each colorful digital silicon photoelectric multiplier pixel cell
Survey device layer and correspond setting respectively.
A kind of 6. colorful digital silicon photo multiplier device according to claim 2, it is characterised in that described first, second,
All single-photon avalanche diodes in 3rd detector layer share same voltage input end.
A kind of 7. colorful digital silicon photo multiplier device according to claim 1, it is characterised in that the read module bag
Include address location, control unit and output unit；The address location is determining each colorful digital silicon photoelectric multiplier
The position of pixel cell；Described control unit controls the data of each colorful digital silicon photoelectric multiplier pixel cell and address defeated
Go out the transmission of instruction；The output unit is transmitting the number that each colorful digital silicon photoelectric multiplier pixel cell is sent
According to and corresponding address information.
A kind of 8. colorful digital silicon photo multiplier device according to claim 1, it is characterised in that described first, second,
3rd detector layer and signal processing circuit layer are manufactured on different wafers respectively, are then thinned and are bonded by wafer
Technology makes the detector layer and signal processing circuit layer be stacked；The electrical connection is real by the way of silicon hole
It is existing.
9. a kind of colorful digital silicon photoelectric multiplier pixel cell according to claim 1, it is characterised in that described
First, second, third detector layer and signal processing circuit layer are realized using CMOS technology manufacture.
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