CN107611104A - A kind of heat dissipation element and preparation method thereof and IGBT modules - Google Patents
A kind of heat dissipation element and preparation method thereof and IGBT modules Download PDFInfo
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- CN107611104A CN107611104A CN201710625511.6A CN201710625511A CN107611104A CN 107611104 A CN107611104 A CN 107611104A CN 201710625511 A CN201710625511 A CN 201710625511A CN 107611104 A CN107611104 A CN 107611104A
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- 230000017525 heat dissipation Effects 0.000 title claims abstract description 73
- 238000002360 preparation method Methods 0.000 title claims abstract description 17
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 169
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 151
- 239000004411 aluminium Substances 0.000 claims abstract description 138
- 239000000919 ceramic Substances 0.000 claims abstract description 103
- 238000003475 lamination Methods 0.000 claims abstract description 87
- -1 aluminium silicon-carbon Chemical group 0.000 claims abstract description 54
- 239000012212 insulator Substances 0.000 claims description 59
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 27
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 26
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 20
- 238000000034 method Methods 0.000 claims description 18
- 239000007788 liquid Substances 0.000 claims description 17
- 238000005530 etching Methods 0.000 claims description 12
- 229910000838 Al alloy Inorganic materials 0.000 claims description 9
- 238000005266 casting Methods 0.000 claims description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 239000010949 copper Substances 0.000 claims description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 4
- 238000001816 cooling Methods 0.000 claims description 3
- 238000011161 development Methods 0.000 claims description 3
- 210000000988 bone and bone Anatomy 0.000 claims description 2
- 150000004767 nitrides Chemical class 0.000 claims description 2
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- 229910052573 porcelain Inorganic materials 0.000 claims description 2
- 230000003014 reinforcing effect Effects 0.000 claims description 2
- 238000005406 washing Methods 0.000 claims description 2
- 238000002955 isolation Methods 0.000 claims 1
- 238000003466 welding Methods 0.000 abstract description 13
- 238000012546 transfer Methods 0.000 abstract description 6
- 229910052751 metal Inorganic materials 0.000 abstract description 4
- 239000002184 metal Substances 0.000 abstract description 4
- 230000035939 shock Effects 0.000 abstract description 4
- 238000004519 manufacturing process Methods 0.000 description 8
- 238000009413 insulation Methods 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 5
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- 239000000203 mixture Substances 0.000 description 4
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
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- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 208000037656 Respiratory Sounds Diseases 0.000 description 2
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- 238000005259 measurement Methods 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 238000012935 Averaging Methods 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- KMWBBMXGHHLDKL-UHFFFAOYSA-N [AlH3].[Si] Chemical compound [AlH3].[Si] KMWBBMXGHHLDKL-UHFFFAOYSA-N 0.000 description 1
- HMDDXIMCDZRSNE-UHFFFAOYSA-N [C].[Si] Chemical compound [C].[Si] HMDDXIMCDZRSNE-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
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- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
This disclosure relates to a kind of heat dissipation element and preparation method thereof and IGBT modules；The heat dissipation element includes heat carrier and heat radiator body, and the heat carrier is that ceramics cover aluminium heat carrier；The heat radiator body is aluminium silicon-carbon heat radiator body；One or more ceramics are combined with by aluminising with being integrally formed in the aluminium silicon-carbon heat radiator body and cover aluminium heat carrier；The disclosure additionally provides the preparation method of above-mentioned heat dissipation element and the IGBT modules containing above-mentioned heat dissipation element.Heat dissipation element described in the disclosure metal level compared with the heat dissipation element that vacuum welding obtains has less cavity, and the intensity of heat dissipation element is higher, and yields is higher, extends service life；The heat dissipation element has thinner aluminium lamination, improves the heat transfer efficiency of heat dissipation element；The hardness of aluminium is relatively low, improves the cold-resistant thermal shock resistance properties of heat dissipation element；Faying face tight between each aspect of heat dissipation element that the disclosure provides, has higher bonding strength and heat conduction efficiency.
Description
Technical field
This disclosure relates to heat sink technology field, in particular it relates to a kind of heat dissipation element and preparation method thereof and IGBT moulds
Group.
Background technology
IGBT (Insulated Gate Bipolar Transistor) is one kind by double pole triode and insulated-gate type
The compound full-control type voltage driven type power semiconductor of FET composition, is widely used on various electronic equipments.With
The development of the high current electronics such as frequency converter, proposes higher requirement for the performance of igbt chip, igbt chip is held
By higher electric current, heat caused by its work is continuously increased.Existing igbt chip is directly encapsulated using vacuum welding technology,
The process of encapsulation includes 3 techniques altogether：Ceramics cover the preparation of aluminium or ceramic copper-clad heat carrier, the processing of aluminium silicon-carbon heat radiator body and
Ceramics cover aluminium or ceramic copper-clad heat carrier and the welding of aluminium silicon-carbon heat radiator body.Vacuum welding technology is not only complicated, the production cycle
It is long, bubble or the uneven cavity that can all make layer formation shape size different of solder layer are produced in welding process；In layer
Cavity current concentrated effect can be triggered to cause thermoelectricity breakdown, heat transfer bad etc., its is encapsulated yields and decline, and use
The lost of life.
Therefore need the defects of a kind of new heat abstractor overcomes vacuum welding in the prior art badly, obtain thermal conduction effect more
Good heat abstractor.
The content of the invention
The purpose of the disclosure is to provide a kind of heat dissipation element, and the heat dissipation element has good thermal conduction effect, structure letter
Single, processing technology difficulty is low.
To achieve these goals, the disclosure provides a kind of heat dissipation element, and the heat dissipation element includes heat carrier and radiating originally
Body；The heat carrier is that ceramics cover aluminium heat carrier；The heat radiator body is aluminium silicon-carbon heat radiator body；The aluminium silicon-carbon heat radiator body
Above being combined with one or more ceramics with being integrally formed by aluminising covers aluminium heat carrier.
Pass through above-mentioned technical proposal, heat dissipation element described in the disclosure metal compared with the heat dissipation element that vacuum welding obtains
Layer has less cavity, and the intensity of heat dissipation element is higher, and yields is higher, extends service life；The heat dissipation element has
Thinner aluminium lamination, improve the heat transfer efficiency of heat dissipation element；The relatively low cold-resistant thermal impact for improving heat dissipation element of the hardness of aluminium
Can, the faying face tight between each aspect of heat dissipation element that the disclosure provides, there is higher bonding strength and heat transfer to imitate
Rate.
The disclosure additionally provides a kind of preparation method of heat dissipation element, and this method comprises the following steps：
S1. silicon carbide porous skeleton and Ceramic insulator are loaded into aluminising mould, and causes the silicon carbide porous skeleton
With between wall with the first space and the Ceramic insulator and the aluminising mould between the Ceramic insulator
Two spaces；
S2. under the conditions of pressure casting is oozed, by molten aluminum liquid add the aluminising mould and fill to first space and
In the Second gap and the operation that is vacuumized and pressurizeed, cooling and demolding is then carried out；
S3. by etching the part aluminum metal removed in first space and the Second gap, to cause described the
Remaining aluminum metal in one space forms the first aluminium lamination and the remaining aluminum metal in the Second gap forms the second aluminium lamination, and institute
Ceramic insulator is stated to isolate second aluminium lamination with first aluminium lamination and the aluminium silicon-carbon heat radiator body.
Pass through above-mentioned technical proposal, the aluminium liquid or aluminium alloy that the heat dissipation element preparation method that the disclosure provides passes through melting
Liquid is integrally formed production ceramics and covers aluminium heat carrier and ceramics are covered into aluminium heat carrier and connected with aluminium silicon-carbon heat radiator body, by vacuum
Ceramics cover the preparation of aluminium heat carrier, the processing of aluminium silicon-carbon heat radiator body in welding technique and ceramics cover aluminium heat carrier and aluminium silicon-carbon dissipates
3 steps of welding of hot body are combined into a step, shorten the production cycle of heat dissipation element.
The disclosure additionally provides the heat dissipation element that the above method is prepared.
The disclosure additionally provides a kind of IGBT modules, and the IGBT modules include IGBT circuit boards and radiating member as described above
Part.
Other feature and advantage of the disclosure will be described in detail in subsequent specific embodiment part.
Brief description of the drawings
Accompanying drawing is for providing further understanding of the disclosure, and a part for constitution instruction, with following tool
Body embodiment is used to explain the disclosure together, but does not form the limitation to the disclosure.In the accompanying drawings：
Fig. 1 is heat dissipation element structure sectional view.
Fig. 2 is the heat dissipation element top view with one piece of Ceramic insulator.
Fig. 3 is aluminising mould and its internal structure sectional view.
Description of reference numerals
The Ceramic insulator of 1 aluminium silicon-carbon heat radiator body 2
The aluminium lamination of 3 first aluminium lamination 4 second
The space of 5 thermal column 6 first
The space of 7 Second gap 8 the 3rd
The silicon carbide porous skeleton of 9 aluminising mould 10
Embodiment
The embodiment of the disclosure is described in detail below in conjunction with accompanying drawing.It should be appreciated that this place is retouched
The embodiment stated is merely to illustrate and explained the disclosure, is not limited to the disclosure.
Disclosure first aspect provides a kind of heat dissipation element, and the heat dissipation element includes heat carrier and heat radiator body；It is described
Heat carrier is that ceramics cover aluminium heat carrier；The heat radiator body is aluminium silicon-carbon heat radiator body 1；Lead in the aluminium silicon-carbon heat radiator body 1
Cross aluminising be combined with one or more ceramics with being integrally formed and cover aluminium heat carrier.
Pass through above-mentioned technical proposal, heat dissipation element described in the disclosure metal compared with the heat dissipation element that vacuum welding obtains
Layer has less cavity, and the intensity of heat dissipation element is higher, and yields is higher, extends service life；The heat dissipation element has
Thinner aluminium lamination, improve the heat transfer efficiency of heat dissipation element；The relatively low cold-resistant thermal impact for improving heat dissipation element of the hardness of aluminium
Can, the faying face tight between each aspect of heat dissipation element that the disclosure provides, there is higher bonding strength and heat transfer to imitate
Rate.
According to the disclosure in a first aspect, the aluminium silicon-carbon heat radiator body 1 includes silicon carbide porous skeleton 10 and passes through aluminising
The integrally formed aluminium being incorporated in inside the silicon carbide porous skeleton 10；The silicon carbide porous skeleton 10 can be with aluminising one
Body is so as to strengthening the structural strength of the aluminium silicon-carbon heat radiator body 1 and its cover the bonding strength of aluminium heat carrier with ceramics.
According to the disclosure in a first aspect, the ceramics cover aluminium heat carrier including Ceramic insulator 2 and are arranged at the ceramics
The first aluminium lamination 3 and the second aluminium lamination 4 on relative two surface of insulation board 2, and the Ceramic insulator 2 passes through aluminising one
Body formed first aluminium lamination 3 is connected in the aluminium silicon-carbon heat radiator body 1；The Ceramic insulator 2 is by second aluminium
Layer 4 is isolated with first aluminium lamination 3 and the aluminium silicon-carbon heat radiator body 1；The integrally formed connection aluminium silicon-carbon of first aluminium lamination 3
Heat radiator body 1 and Ceramic insulator 2, make no cavity therebetween and there is more preferable bonding strength；On second aluminium lamination 4
It can etch to form circuit.
According to the disclosure in a first aspect, the aluminium silicon-carbon heat radiator body 1 with the surface that first aluminium lamination 3 is connected is flat
Whole surface；The Ceramic insulator 2 is alumina ceramic plate, reinforced alumina ceramic plate, al nitride ceramic board or silicon nitride pottery
Porcelain plate；The flat surface of aluminium silicon-carbon heat radiator body 1 is advantageous to the connection between the first aluminium lamination 3 and aluminium silicon-carbon heat radiator body 1, no
It is also easy to produce gap；There is relatively low density and higher hardness from the ceramic wafer of above-mentioned material, have utilization to increase the service life.
According to the disclosure in a first aspect, first aluminium lamination 3 and second aluminium lamination 4 are aluminum layer and/or aluminium alloy layer；
The thickness of first aluminium lamination 3 is 0.02~0.15mm, and the thickness of the Ceramic insulator 2 is 0.25~1mm, second aluminium
The thickness of layer 4 is 0.2~1.0mm；The hardness of aluminium lamination and aluminium alloy layer is relatively low, and cold-resistant thermal shock resistance properties is more superior, uses simultaneously
The aluminium lamination of the thickness may improve the ceramic efficiency and structural strength for covering aluminium heat carrier with Ceramic insulator 2, and extension uses the longevity
Life.
According to the disclosure in a first aspect, aluminium silicon-carbon heat radiator body 1 described in relative to same, the Ceramic insulator 2
It is one to set quantity, and the setting quantity of the aluminium lamination 4 of the first aluminium lamination 3 and second is one piece and/or polylith；
Or relative to aluminium silicon-carbon heat radiator body 1 described in same, the setting quantity of the Ceramic insulator 2 be it is multiple,
The setting quantity of the aluminium lamination 4 of first aluminium lamination 3 and second is identical with the quantity of the Ceramic insulator 2.
Above-mentioned different Ceramic insulator 2 can meet that different radiatings are set from the setting of the first aluminium lamination 3 and the second aluminium lamination 4
Meter demand.
According to the disclosure in a first aspect, being additionally provided with one or more thermal columns 5 in the aluminium silicon-carbon heat radiator body 1；Institute
The one end for stating thermal column 5 is fixedly connected with aluminium silicon-carbon heat radiator body 1, and the other end of thermal column 5 is free end；The thermal column 5
The heat that IGBT modules are given out can be conducted, improves radiating efficiency.
According to the disclosure in a first aspect, the thermal column 5 covers aluminium heat carrier with the ceramics is separately positioned on the aluminium silicon
On relative two surface of carbon heat radiator body 1；The thermal column 5 covers at least one in copper post for aluminium post, aluminium alloy column and aluminium
Kind；The thermal column 5 can shorten the production cycle using said structure with simplifying production technology.
According to the disclosure in a first aspect, the thermal column 5 is connected to the aluminium silicon-carbon radiating by aluminising with being integrally formed
On body 1；Bonding strength between integrally formed thermal column 5 and aluminium silicon-carbon heat radiator body 1 is higher, strengthens the strong of heat abstractor
Degree, increases the service life.
Disclosure second aspect provides a kind of preparation method of heat dissipation element, and this method comprises the following steps：
S1. silicon carbide porous skeleton 10 and Ceramic insulator 2 are loaded into aluminising mould 9, and causes the silicon carbide porous
Wall with the first space 6 and the Ceramic insulator 2 and the aluminising mould 9 between skeleton 10 and the Ceramic insulator 2
Between there is Second gap 7；
S2. under the conditions of pressure casting is oozed, molten aluminum liquid is added into the aluminising mould 9 and filled to first space 6
With in the Second gap 7 and the operation that is vacuumized and pressurizeed, cooling and demolding is then carried out；
S3. it is described to cause by etching the part aluminum metal removed in first space 6 and the Second gap 7
Remaining aluminum metal in first space 6 forms the first aluminium lamination 3 and the remaining aluminum metal in the Second gap 7 forms the second aluminium lamination
4, and the Ceramic insulator 2 isolates second aluminium lamination 4 with first aluminium lamination 3 and the aluminium silicon-carbon heat radiator body 1.
Pass through above-mentioned technical proposal, the aluminium liquid or aluminium alloy that the heat dissipation element preparation method that the disclosure provides passes through melting
Liquid is integrally formed production ceramics and covers aluminium heat carrier, and ceramics are covered into aluminium heat carrier and connected with being integrally formed with heat radiator body,
Ceramics in vacuum welding technology are covered into the preparation of aluminium heat carrier, the processing of heat radiator body and ceramics and cover aluminium heat carrier and heat radiator body
3 steps of welding be combined into a step, shorten the production cycle of heat dissipation element.
According to disclosure second aspect, the pressure casting condition of oozing includes：The temperature of preheating is 500-700 DEG C；Molten aluminum
The temperature of liquid is 500-700 DEG C, and the pressure vacuumized is 50-100Pa, and the pressure of pressurization is 4-10MPa；The molten aluminum liquid is
Pure aluminum or aluminum alloy；Progress pressure aluminising, which is integrally formed, under the conditions of described can reduce the first aluminium lamination 3, the second aluminium lamination 4 and dissipate
Cavity in the metal level of plume 5, improve the quality of production and yields.
According to disclosure second aspect, also have between the wall of the silicon carbide porous skeleton 10 and the aluminising mould 9
3rd space 8, the 3rd space 8 are used to form thermal column 5；Methods described can be such that thermal column 5 is formed and the radiating of aluminium silicon-carbon
Body 1, which connects, once to be completed, and is avoided subsequently welding thermal column 5, is improved the company between thermal column 5 and aluminium silicon-carbon heat radiator body 1
Connect steadiness.
According to disclosure second aspect, the Ceramic insulator 2 is alumina ceramic plate, reinforced alumina ceramic plate, nitrogen
Change aluminium ceramic wafer or silicon nitride ceramic plate；The thickness of first aluminium lamination 3 is 0.02~0.15mm, the Ceramic insulator 2
Thickness is 0.25~1mm, and the thickness of second aluminium lamination 4 is 0.2~1mm；The ceramic wafer of above-mentioned material has relatively low density
Higher hardness, there is utilization to increase the service life；Ceramics may be improved using the aluminium lamination of the thickness with Ceramic insulator 2 to cover
The efficiency and structural strength of aluminium heat carrier, increase the service life.
According to disclosure second aspect, relative to aluminium silicon-carbon heat radiator body 1 described in same, the Ceramic insulator 2
It is one to set quantity, and the setting quantity of the aluminium lamination 4 of the first aluminium lamination 3 and second is one piece and/or polylith；
Or relative to aluminium silicon-carbon heat radiator body 1 described in same, the setting quantity of the Ceramic insulator 2 be it is multiple,
The setting quantity of the aluminium lamination 4 of first aluminium lamination 3 and second is identical with the quantity of the Ceramic insulator 2.
Above-mentioned different Ceramic insulator 2 can meet that different radiatings are set from the setting of the first aluminium lamination 3 and the second aluminium lamination 4
Meter demand.
According to disclosure second aspect, etching can use the conventional use of various methods of those skilled in the art, parameter
Can be conventional use of parameter, such as the operation of etching includes pad pasting, exposure, development, burn into striping and the water carried out successively
The step of washing.
The disclosure third aspect provides the radiating member that the preparation method according to disclosure second aspect is prepared
Part.
Disclosure fourth aspect provides a kind of IGBT modules, and the IGBT modules are including IGBT circuit boards and as described above
Heat dissipation element.
The disclosure is further illustrated below by embodiment, but the disclosure is not therefore any way limited.
Embodiment 1
The present embodiment is used for the preparation method for illustrating heat dissipation element.
Be 4.5mm by thickness, a length of 215mm, a width of 110mm silicon carbide porous skeleton 10 and 1 thickness be 0.38mm,
A length of 207mm, a width of 77mm aluminium oxide ceramics insulation board 2 load aluminising mould 9, and cause the silicon carbide porous skeleton 10
The wall of the first space 6 with 0.1mm and the Ceramic insulator 2 and the aluminising mould 9 between the Ceramic insulator 2
Between there is 0.5mm Second gaps 7；Also there is the 3rd space 8 between the wall of aluminising mould 9 and silicon carbide porous skeleton 10,
For forming thermal column 5；3rd space 8 is in comb teeth-shaped, and the dentation of a length of 8mm is used to form thermal column 5, institute
State between each dentation at intervals of 0.8mm.
Preheating the aluminising mould 9 makes its temperature be 600 DEG C, and 700 DEG C of molten aluminum is added into the aluminising mould 9
Liquid, it is 80Pa to be evacuated to pressure in aluminising mould 9, and it is 7Mpa to be then forced into pressure, treats that the aluminium liquid is cooled to room temperature and determined
It is stripped after type, the silicon carbide porous skeleton 10 and the aluminium in portion incorporated therein form aluminium silicon-carbon heat radiator body 1.
Etching removes the part aluminum metal in first space 6 and the Second gap 7 after pad pasting so that described first
Remaining aluminum metal in space 6 forms the first aluminium lamination 3 that thickness is 0.1mm and the remaining aluminum metal shape in the Second gap 7
Into the second aluminium lamination 4 that thickness is 0.5mm, and the Ceramic insulator 2 is by second aluminium lamination 4 and first aluminium lamination 3 and institute
Aluminium silicon-carbon heat radiator body 1 is stated to isolate；There is 5mm between the edge of the aluminium lamination 4 of first aluminium lamination 3 and second and Ceramic insulator 2
Distance.
The heat dissipation element described in the present embodiment is obtained after the completion of etching.
Embodiment 2
The present embodiment is used for the preparation method for illustrating heat dissipation element.
Be 4.5mm by thickness, a length of 215mm, a width of 110mm silicon carbide porous skeleton 10 and 1 thickness be 0.32mm,
A length of 207mm, a width of 77mm reinforced alumina ceramic insulation board 2 load aluminising mould 9, and cause the silicon carbide porous bone
The first space 6 with 0.1mm and the Ceramic insulator 2 and the aluminising mould 9 between frame 10 and the Ceramic insulator 2
Wall between there is 0.5mm Second gaps 7；Also there is the 3rd sky between the wall of aluminising mould 9 and silicon carbide porous skeleton 10
Gap 8, for forming thermal column 5；3rd space 8 is in comb teeth-shaped, and the dentation of a length of 8mm is used to form thermal column
5, between each dentation at intervals of 0.8mm.
Preheating the aluminising mould 9 makes its temperature be 600 DEG C, and 700 DEG C of molten aluminum is added into the aluminising mould 9
Liquid, it is 80Pa to be evacuated to pressure in aluminising mould 9, and it is 7Mpa to be then forced into pressure, treats that the aluminium liquid is cooled to room temperature and determined
It is stripped after type, the silicon carbide porous skeleton 10 and the aluminium in portion incorporated therein form aluminium silicon-carbon heat radiator body 1.
Etching removes the part aluminum metal in first space 6 and the Second gap 7 after pad pasting so that described first
Remaining aluminum metal in space 6 forms the first aluminium lamination 3 that thickness is 0.1mm and the remaining aluminum metal shape in the Second gap 7
The thickness being spaced into 3 be 0.5mm the second aluminium lamination 4, and the Ceramic insulator 2 by second aluminium lamination 4 with it is described
First aluminium lamination 3 and the aluminium silicon-carbon heat radiator body 1 are isolated；Second aluminium lamination 4 has 5mm interval each other；Described
There is 5mm distance between one aluminium lamination 3 and the second aluminium lamination 4 and the edge of Ceramic insulator 2.
The heat dissipation element described in the present embodiment is obtained after the completion of etching.
Embodiment 3
The present embodiment is used for the preparation method for illustrating heat dissipation element.
Be 4.5mm by thickness, a length of 215mm, a width of 110mm silicon carbide porous skeleton 10 and 2 thickness be 0.38mm,
A length of 101mm, a width of 77mm aluminium oxide ceramics insulation board 2 load aluminising mould 9,2 aluminium oxide ceramics insulation boards 2 therein
It is spaced, and causes first space 6 between the silicon carbide porous skeleton 10 and the Ceramic insulator 2 with 0.1mm
And there is 0.5mm Second gaps 7 between the wall of the Ceramic insulator 2 and the aluminising mould 9；2 Ceramic insulators 2
Between have 5mm interval；Also there is the 3rd space 8, for shape between the wall of aluminising mould 9 and silicon carbide porous skeleton 10
Into thermal column 5；3rd space 8 is in comb teeth-shaped, and the dentation of a length of 8mm is used to form thermal column 5, described each
Between dentation at intervals of 0.8mm.
Preheating the aluminising mould 9 makes its temperature be 600 DEG C, and 700 DEG C of molten aluminum is added into the aluminising mould 9
Liquid, it is 80Pa to be evacuated to pressure in aluminising mould 9, and it is 7Mpa to be then forced into pressure, treats that the aluminium liquid is cooled to room temperature and determined
It is stripped after type, the silicon carbide porous skeleton 10 and the aluminium in portion incorporated therein form aluminium silicon-carbon heat radiator body 1.
Etching removes the part aluminum metal in first space 6 and the Second gap 7 after pad pasting so that described first
Remaining aluminum metal in space 6 forms the first aluminium lamination 3 that thickness is 0.1mm and the remaining aluminum metal shape in the Second gap 7
The thickness being spaced into 2 be 0.5mm the second aluminium lamination 4, and the Ceramic insulator 2 by second aluminium lamination 4 with it is described
First aluminium lamination 3 and the aluminium silicon-carbon heat radiator body 1 are isolated；The side of the aluminium lamination 4 of first aluminium lamination 3 and second and Ceramic insulator 2
There is 5mm distance between edge.
The heat dissipation element described in the present embodiment is obtained after the completion of etching.
Comparative example 1
Aluminium silicon-carbon is prepared by cold moudling, hot pressing, annealing and insulation after silicon-carbide particle is mixed with aluminium powder to dissipate
Hot body.
By ceramic copper-clad heat carrier using SnPbAg solders in the lower 185 DEG C of preheatings of hydrogen atmosphere, 265 DEG C are soldered to the aluminium
This comparative example heat dissipation element is prepared in silicon-carbon heat radiator body；The ceramic copper-clad heat carrier includes the toughness reinforcing that thickness is 0.32mm
Aluminium oxide ceramics insulation board, and thickness on its two relative surface is 0.3mm copper sheets, the copper sheet oxidation is welded in
On relative two surface of the Ceramic insulator.
Testing example 1
Thermal cycling test is carried out to the heat dissipation element obtained in embodiment 1-3 and comparative example 1.
The heat dissipation element of acquisition is put into mixture of ice and water, by the heat dissipation element from mixture of ice and water after 30 minutes
Taken out in (persistently adding ice cube, keep 0 DEG C of environment), the heat dissipation element is put into 150 DEG C after placing 10 minutes at room temperature
In baking oven, the heat dissipation element is taken out from baking oven after being kept for 30 minutes in 150 DEG C, will after placing 10 minutes at room temperature
The IGBT is placed again into mixture of ice and water (persistently adding ice cube, keep 0 DEG C of environment) with radiating bottom plate, said process one
Individual circulation.20 heat dissipation elements in every group are carried out with above-mentioned cold-resistant heat-resistant impact performance measurement respectively, described in every 20
The aluminium lamination situation (outward appearance detects, such as crackle and dropping situations) of sample to be determined is observed once in circulation, when sample aluminium to be determined
There is obvious crackle and had to stop stopping experiment to the sample to be determined when coming off tendency in layer, records undergone before it above-mentioned and follows
The number of ring, and the number for the circulation undergone in test to 20 heat dissipation elements to be determined in every group is averaging
Number, the measurement result of above-mentioned each group heat dissipation element are as shown in table 1.
Table 1
| Outward appearance after 100 circulations | Cold-hot number of shocks | |
| Embodiment 1 | Well | 200 |
| Embodiment 2 | Well | 500 |
| Embodiment 3 | Well | 200 |
| Comparative example 1 | Line slot is cracked | 100 |
Through embodiment 1-3 in table 1 as can be seen that the heat dissipation element that the disclosure is prepared has more compared with comparative example 1
Superior cold-resistant thermal shock resistance properties, there is higher bonding strength and heat conduction efficiency.
The preferred embodiment of the disclosure is described in detail above in association with accompanying drawing, still, the disclosure is not limited to above-mentioned reality
The detail in mode is applied, in the range of the technology design of the disclosure, a variety of letters can be carried out to the technical scheme of the disclosure
Monotropic type, these simple variants belong to the protection domain of the disclosure.
It is further to note that each particular technique feature described in above-mentioned embodiment, in not lance
In the case of shield, it can be combined by any suitable means.In order to avoid unnecessary repetition, the disclosure to it is various can
The combination of energy no longer separately illustrates.
In addition, it can also be combined between a variety of embodiments of the disclosure, as long as it is without prejudice to originally
Disclosed thought, it should equally be considered as disclosure disclosure of that.
Claims (17)
1. a kind of heat dissipation element, the heat dissipation element includes heat carrier and heat radiator body, it is characterised in that the heat carrier is ceramics
Cover aluminium heat carrier；The heat radiator body is aluminium silicon-carbon heat radiator body (1)；Pass through aluminising one on the aluminium silicon-carbon heat radiator body (1)
One or more ceramics are combined with body formedly covers aluminium heat carrier.
2. heat dissipation element according to claim 1, wherein, the aluminium silicon-carbon heat radiator body (1) includes silicon carbide porous bone
Frame (10) and pass through that aluminising is integrally formed to be incorporated in the internal aluminium of the silicon carbide porous skeleton (10).
3. heat dissipation element according to claim 1, wherein, the ceramics cover aluminium heat carrier include Ceramic insulator (2) and
The first aluminium lamination (3) and the second aluminium lamination (4) being arranged on relative two surface of the Ceramic insulator (2), and it is described
Ceramic insulator (2) is connected on the aluminium silicon-carbon heat radiator body (1) by integrally formed first aluminium lamination (3) of aluminising；
The Ceramic insulator (2) by second aluminium lamination (4) and first aluminium lamination (3) and the aluminium silicon-carbon heat radiator body (1) every
From.
4. heat dissipation element according to claim 3, wherein, the aluminium silicon-carbon heat radiator body (1) and first aluminium lamination (3)
The surface being connected is flat surface；The Ceramic insulator (2) is alumina ceramic plate, reinforced alumina ceramic plate, nitridation
Aluminium ceramic wafer or silicon nitride ceramic plate.
5. heat dissipation element according to claim 3, wherein, first aluminium lamination (3) and second aluminium lamination (4) they are fine aluminium
Layer and/or aluminium alloy layer；The thickness of first aluminium lamination (3) is 0.02~0.15mm, and the thickness of the Ceramic insulator (2) is
0.25~1mm, the thickness of second aluminium lamination (4) is 0.2~1.0mm.
6. heat dissipation element according to claim 3, wherein, it is described relative to aluminium silicon-carbon heat radiator body (1) described in same
The setting quantity of Ceramic insulator (2) is one, the setting quantity of first aluminium lamination (3) and the second aluminium lamination (4) for one piece with/
Or polylith；
Or relative to aluminium silicon-carbon heat radiator body (1) described in same, the setting quantity of the Ceramic insulator (2) be it is multiple,
The setting quantity of first aluminium lamination (3) and the second aluminium lamination (4) is identical with the quantity of the Ceramic insulator (2).
7. heat dissipation element according to claim 1, wherein, be additionally provided with the aluminium silicon-carbon heat radiator body (1) one or
Multiple thermal columns (5)；One end of the thermal column (5) is fixedly connected with aluminium silicon-carbon heat radiator body (1), thermal column (5) it is another
Hold as free end.
8. heat dissipation element according to claim 7, wherein, the thermal column (5) covers aluminium heat carrier difference with the ceramics
It is arranged on relative two surface of the aluminium silicon-carbon heat radiator body (1)；The thermal column (5) be aluminium post, aluminium alloy column and
Aluminium covers at least one of copper post.
9. heat dissipation element according to claim 7, wherein, the thermal column (5) is connected to being integrally formed by aluminising
On the aluminium silicon-carbon heat radiator body (1).
10. a kind of preparation method of heat dissipation element, it is characterised in that this method comprises the following steps：
S1. silicon carbide porous skeleton (10) and Ceramic insulator (2) are loaded into aluminising mould (9), and make it that the carborundum is more
With the first space (6) and the Ceramic insulator (2) and the aluminising between hole on framework (10) and the Ceramic insulator (2)
There is Second gap (7) between the wall of mould (9)；
S2. under the conditions of pressure casting is oozed, molten aluminum liquid is added into the aluminising mould (9) and filled to first space (6)
With in the Second gap (7) and the operation that is vacuumized and pressurizeed, cooling and demolding is then carried out；
S3. it is described to cause by etching the part aluminum metal removed in first space (6) and the Second gap (7)
Remaining aluminum metal in first space (6) forms the first aluminium lamination (3) and the remaining aluminum metal in the Second gap (7) forms the
Two aluminium laminations (4), and the Ceramic insulator (2) dissipates second aluminium lamination (4) and first aluminium lamination (3) and the aluminium silicon-carbon
Hot body (1) isolation.
11. according to the method for claim 10, wherein, the pressure casting condition of oozing includes：The temperature of preheating is 500-700
DEG C, the temperature of molten aluminum liquid is 500-700 DEG C, and the pressure vacuumized is 50-100Pa, and the pressure of pressurization is 4-10MPa；It is described
Molten aluminum liquid is pure aluminum or aluminum alloy.
12. the method according to claim 11, wherein, the silicon carbide porous skeleton (10) and the aluminising mould (9)
Wall between also there is the 3rd space (8), the 3rd space (8) is used to form thermal column (5).
13. according to the method for claim 10, wherein, the Ceramic insulator (2) is alumina ceramic plate, toughness reinforcing oxidation
Aluminium ceramic wafer, al nitride ceramic board or silicon nitride ceramic plate；The thickness of first aluminium lamination (3) is 0.02~0.15mm, described
The thickness of Ceramic insulator (2) is 0.25~1mm, and the thickness of second aluminium lamination (4) is 0.2~1mm.
14. the method according to claim 11, wherein, relative to aluminium silicon-carbon heat radiator body (1), the pottery described in same
The setting quantity of porcelain insulating plate (2) is one, the setting quantity of first aluminium lamination (3) and the second aluminium lamination (4) be one piece and/or
Polylith；
Or relative to aluminium silicon-carbon heat radiator body (1) described in same, the setting quantity of the Ceramic insulator (2) be it is multiple,
The setting quantity of first aluminium lamination (3) and the second aluminium lamination (4) is identical with the quantity of the Ceramic insulator (2).
15. according to the method for claim 10, wherein, etching operation include carry out successively pad pasting, exposure, development,
The step of burn into striping and washing.
16. the heat dissipation element that the method in claim 10-15 described in any one is prepared.
17. a kind of IGBT modules, it is characterised in that the IGBT modules include appointing in IGBT circuit boards and claim 1-9 and 16
Heat dissipation element described in meaning one.
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| CN201710625511.6A CN107611104A (en) | 2017-07-27 | 2017-07-27 | A kind of heat dissipation element and preparation method thereof and IGBT modules |
| PCT/CN2018/093956 WO2019019867A1 (en) | 2017-07-27 | 2018-07-02 | Heat dissipation element and preparation method therefor, and igbt module |
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| WO2019019867A1 (en) * | 2017-07-27 | 2019-01-31 | 比亚迪股份有限公司 | Heat dissipation element and preparation method therefor, and igbt module |
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| CN1929119A (en) * | 2005-09-09 | 2007-03-14 | 日本碍子株式会社 | Heat spreader module and method of manufacturing same |
| CN101538171A (en) * | 2009-04-30 | 2009-09-23 | 清华大学 | Surface metallised ceramic and manufacturing method thereof |
| CN102756515A (en) * | 2011-04-28 | 2012-10-31 | 比亚迪股份有限公司 | Ceramic aluminum-coated base plate and manufacturing method thereof |
| CN103508745A (en) * | 2012-06-27 | 2014-01-15 | 比亚迪股份有限公司 | Production method for ceramic aluminum-clad plate and ceramic aluminum-clad plate obtained by method |
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| JP4113971B2 (en) * | 2002-07-30 | 2008-07-09 | 株式会社豊田自動織機 | Low expansion material and manufacturing method thereof |
| JP5316602B2 (en) * | 2010-12-16 | 2013-10-16 | 株式会社日本自動車部品総合研究所 | Heat diffusion member joining structure, heating element cooling structure, and heat diffusion member joining method |
| CN107611104A (en) * | 2017-07-27 | 2018-01-19 | 比亚迪股份有限公司 | A kind of heat dissipation element and preparation method thereof and IGBT modules |
| CN107546200B (en) * | 2017-07-27 | 2018-09-11 | 比亚迪股份有限公司 | A kind of heat dissipation element and preparation method thereof and IGBT modules |
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|---|---|---|---|---|
| CN1929119A (en) * | 2005-09-09 | 2007-03-14 | 日本碍子株式会社 | Heat spreader module and method of manufacturing same |
| CN101538171A (en) * | 2009-04-30 | 2009-09-23 | 清华大学 | Surface metallised ceramic and manufacturing method thereof |
| CN102756515A (en) * | 2011-04-28 | 2012-10-31 | 比亚迪股份有限公司 | Ceramic aluminum-coated base plate and manufacturing method thereof |
| CN103508745A (en) * | 2012-06-27 | 2014-01-15 | 比亚迪股份有限公司 | Production method for ceramic aluminum-clad plate and ceramic aluminum-clad plate obtained by method |
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| WO2019019867A1 (en) * | 2017-07-27 | 2019-01-31 | 比亚迪股份有限公司 | Heat dissipation element and preparation method therefor, and igbt module |
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