CN107579430A - Quickly the integrated aperiodicity height of scanning contrasts grating vertical cavity surface-emitting laser radar light source to angle - Google Patents
Quickly the integrated aperiodicity height of scanning contrasts grating vertical cavity surface-emitting laser radar light source to angle Download PDFInfo
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Abstract
The invention discloses a kind of angle, quickly the integrated aperiodicity height of scanning contrasts grating vertical cavity surface-emitting laser radar light source, belongs to field of semiconductor photoelectron technique, solves the problems, such as that VCSEL beam deflection angle degree is small, it is single to realize angle, can not be scanned.The present invention includes MQW active gain layer, oxidation current limitation aperture layer and P EDS maps formula Bragg reflection mirror layer successively from top to bottom, the MQW active gain layer, oxidation current limitation aperture layer and P EDS maps formula Bragg reflections mirror layer form the first table top, the second table top that Intermediate Gray has air layer and diameter is less than the first table top is provided with first table top, aperiodicity high-contrast grating layer is provided with second table top, on first table top, the outside of second table top be provided with p side electrode.The present invention can not only realize the wide visual field detection and scanning of wide-angle, and reduce the complexity of laser radar light-source system, meet the requirement of laser radar light source.
Description
Technical field
The invention belongs to field of semiconductor photoelectron technique, quickly the integrated aperiodicity of scanning is high for more particularly to a kind of angle
Contrast grating vertical cavity surface-emitting laser radar light source.
Background technology
Laser radar (LiDAR) has high resolution, good concealment, antijamming capability compared with common microwave radar
By force, low-altitude detection performance is good, the huge advantage such as small volume, light weight.Laser radar is independent navigation SUAV, aids in driving
Sail or full-automatic driving system, natural target, collision avoidance navigation etc. field core component.LiDAR productions in the market
Product are bulky, weight is big and expensive, and use the machinery rotation of current main flow and ring laser distribution real
Existing 360 ° are looked around, and so cause the LiDAR light-source systems of complexity and expensive unit price.So a kind of carry the half of angle scanning
Conductor laser will form absolute advantage to mechanical scan and ring laser Distributed Scans LiDAR, and price is at double
Reduce, volume microminiaturization, service life length etc..
Vertical cavity surface emitting laser (VCSEL) is with threshold current is small, dispersion angle is small, output facula presentation is circular right
Title property, the advantages that easily two dimension is integrated, it is solid state laser, gas laser, not available for outside cavity gas laser.So into
Picture, sensor, laser radar etc., VCSEL is with a wide range of applications, and wherein laser beam control technology is to realize
The basis of these applications.Today there is also many realize laser beam control technology, such as mechanical polygonal rotating mirror, collection
The double-P type electrode method of an accepted way of doing sth, photonic crystal method, slower rays Bragg reflection waveguide method etc..But these integrated form beam angle controls
The deflection angle that preparation method obtains is limited, it is impossible to meets the requirement of big visual field radar light source.
The content of the invention
Present invention seek to address that the VCSEL Beam Control technology beam deflection angle degree of integrated form is small, it is single to realize angle, no
It can be scanned, cannot function as the problem of laser radar light source, there is provided quickly the integrated aperiodicity of scanning is high for a kind of angle
Grating vertical cavity surface-emitting laser radar light source is contrasted, requirement of the laser radar for light source can be met.
Quickly the integrated aperiodicity height of scanning contrasts grating vertical cavity surface-emitting laser radar light to angle provided by the invention
Source, include successively from top to bottom：N faces electrode, substrate, N EDS maps formula Bragg reflections mirror layer, MQW active gain layer,
Oxidation current limits aperture layer and P EDS maps formula Bragg reflection mirror layer, the MQW active gain layer, oxidation current limitation
Aperture layer and P EDS maps formula Bragg reflections mirror layer form the first table top, and first table top is multiple, and in N EDS maps formula cloth
It is distributed on glug mirror layer in array；
It is provided with internal the second table top for being less than the first table top with air layer and diameter on first table top, described the
Two table tops are distributed on the first table top in array；
Aperiodicity high-contrast grating layer (non-periodic HCG), the non-week are provided with second table top
Phase property high-contrast grating layer is by that can realize that the aperiodicity of different deflection angles, different screen periods and dutycycle is high
Spend than degree gratings strips combine aperiodicity height than degree grating array；
On first table top, the outside of second table top be provided with p side electrode.
Further, second table top is the Si of support aperiodicity high-contrast grating layer3N4Layer or SiO2Layer.
Further, the structure of second table top is cylindrical structural.
Further, the aperiodicity high-contrast grating layer is non-crystalline silicon (a-Si) layer.
Further, the aperiodicity height is monolithically integrated in second than degree grating array by minute manufacturing technology
The surface in face.
Further, the aperiodicity height is realized than degree grating array by the external high-velocity scanning pulse power is emitted
The active scan of laser.
Quickly the integrated aperiodicity height of scanning contrasts grating vertical cavity surface-emitting laser radar light source to above-mentioned angle, in wide field
Application in scanning and detecting laser radar.
Quickly scanning integrates aperiodicity high-contrast grating vertical cavity surface-emitting laser radar light source to the angle of the present invention,
Realize that the Wave-front phase of light beam controls by integrated specific period and dutycycle aperiodicity high-contrast grating, and then realize
The multi-angle of VCSEL outgoing beams is controlled.Aperiodicity high-contrast grating is arranged according to certain rule and distribution is integrated in
Vertical cavity surface emitting laser light-emitting window surface, it is rapidly injected in external high-speed pulse current scanning formula and is integrated with non-week
The vertical-cavity surface-emitting laser array unit of phase property high-contrast grating, laser emitting direction can actively deflect simultaneously
Active scanning can be realized.
Based on the high-contrast grating array of this multi-angle control, the present invention is proposed and a kind of can realized at work
The vertical-cavity surface-emitting laser array radar light source that space angle quickly scans, the minimum wide angle transmitting vertical cavity of this size
Surface-emitting laser array light-source system can greatly reduce laser radar volume, reduce answering for laser radar light-source system
Polygamy, mitigate the weight of laser radar, reduce laser radar unit price.
Compared with existing laser radar light-source system, the present invention has the advantage that technical benefits has：
Quickly the integrated aperiodicity height of scanning contrasts grating vertical cavity surface-emitting laser radar light to angle provided by the invention
Source, it is a kind of active scanning light source, meets the requirement of laser radar wide field scanning, can be by adjusting aperiodicity light
The cycle of grid (non-periodic HCG) and dutycycle realize Beam Wave-Front phase controlling, and then realize beam deflection angle degree control
System and focusing.Compared to the beam deflection techniques of other integrated forms, aperiodicity high-contrast grating can realize larger deflection
Angle.
Quickly the integrated aperiodicity height of scanning contrasts grating vertical cavity surface-emitting laser radar light to angle provided by the invention
Source, the wide visual field detection and scanning of wide-angle can be not only realized, laser radar volume can also be greatly reduced, reduce laser thunder
Up to the complexity of light-source system, mitigate the weight of laser radar, reduce laser radar unit price, the manufacturing process line of light source with it is existing
Microelectronic technique production line it is compatible.
Brief description of the drawings
, below will be to institute in embodiment in order to illustrate more clearly of the embodiment of the present application or technical scheme of the prior art
The accompanying drawing needed to use is briefly described, it should be apparent that, drawings in the following description are only one described in the present invention
A little embodiments, for those of ordinary skill in the art, other accompanying drawings can also be obtained according to these accompanying drawings.
Fig. 1 is the angle provided by the invention quickly integrated aperiodicity high-contrast grating vertical cavity surface-emitting laser of scanning
The front view of radar light source；
Fig. 2 is the angle provided by the invention quickly integrated aperiodicity high-contrast grating vertical cavity surface-emitting laser of scanning
The top view of radar light source.
Description of reference numerals：
1st, N faces electrode；2nd, substrate；3rd, N EDS maps formula Bragg reflection mirror layer；4th, MQW active gain layer；5th, oxygen
Galvanic current limits aperture layer；6th, P EDS maps formula Bragg reflection mirror layer；7th, p side electrode；8th, aperiodicity high-contrast grating layer；
9th, air layer；10th, the second table top；11st, the first table top.
Embodiment
In order that those skilled in the art more fully understands technical scheme, with reference to the accompanying drawings and examples
The present invention is described in further detail.It should be appreciated that the specific embodiments described herein are merely illustrative of the present invention, and
It is not used in the restriction present invention.
Referring to shown in Fig. 1 and Fig. 2；
Quickly scanning integrates the high contrast grating vertical cavity surface-emitting laser radar light source of aperiodicity to the angle of the present invention, from
Under include successively to upper：N faces electrode 1, substrate 2, N EDS maps formula Bragg reflections mirror layer 3, MQW active gain layer 4, oxygen
Galvanic current limits aperture layer 5 and P EDS maps formula Bragg reflections mirror layer 6, the MQW active gain layer 4, oxidation current limit
Drilling layer 5 and P EDS maps formula Bragg reflections mirror layer 6 form the first table top 11, and first table top 11 is multiple, and in N faces
It is distributed on distributed bragg reflector mirror layer 6 in array；
The second table top that inside is less than the first table top 11 with air layer 9 and diameter is provided with first table top 11
10, second table top 10 is distributed on the first table top 11 in array；
Aperiodicity high-contrast grating layer 8, the aperiodicity high contrast light are provided with second table top 10
Gate layer 8 is by the aperiodicity height of different deflection angles, different screen periods and dutycycle can be realized than degree gratings strips
The aperiodicity height combined is than degree grating array；
On first table top 11, the outside of second table top 10 be provided with p side electrode 7.
The material of N faces electrode 1 can be gold germanium nickel alloy (Au/Ge/Ni), gold germanium nickel billon (AuGeNi/Au),
Gold-germanium alloy (Au/Ge) or platinum germanium alloy (Pt/Au/Ge)；
The material of the substrate 2 can be GaAs (GaAs), indium phosphide (InP) or gallium nitride (GaN)；P-type DBR layer and
N-type DBR layer can be GaAs/aluminium arsenide (GaAs/AlAs)；
The material of the MQW active gain layer 4 can be indium gallium arsenic/gallium arsenide phosphide (InGaAs/GaAsP), arsenic
Gallium/aluminum gallium arsenide (GaAs/AlGaAs), indium gallium arsenic/GaAs (InGaAs/GaAs) or indium gallium arsenic/aluminum gallium arsenide (InGaAs/
AlGaAs)；
The material of the p side electrode 7 can be titanium alloy (Ti/Au) or titanium platinum alloy (Ti/Pt/Au).
Preferably, second table top 10 is the Si of support aperiodicity high-contrast grating layer 83N4Layer or SiO2Layer.
Preferably, the structure of second table top 10 is cylindrical structural.
Preferably, the aperiodicity high-contrast grating layer 8 is non-crystalline silicon (a-Si) layer, aperiodicity high contrast light
Gate layer 8 can be by forming aperiodicity gratings strips after ICP or RIE etchings.
Preferably, the aperiodicity height is monolithically integrated in the second table top than degree grating array by minute manufacturing technology
10 surface.
Preferably, the aperiodicity height realizes that outgoing swashs than degree grating array by the external high-velocity scanning pulse power
The active scan of light.
Quickly scanning integrates aperiodicity high-contrast grating vertical cavity surface-emitting laser radar light source to the angle of the present invention
Preparation method, comprise the following steps：
(1) SiO that a layer thickness is 500nm is grown using PECVD on the VCSEL epitaxial wafers cleaned up2Layer, SiO2
First, layer functions as support non-periodic HCG substrate, and second effect is this layer of SiO2Layer is etched into
Ring-type, middle SiO2Be etched removing, forms the air layer of low-refraction, and the VCSEL epitaxial wafers include substrate 2, N faces point
Cloth Bragg reflection mirror layer 3, MQW active gain layer 4, oxidation current limitation aperture layer 5 and P EDS maps formulas Prague are anti-
Penetrate mirror layer 6；
(2) with SiO2Certain thickness non-crystalline silicon (a-Si) layer of one layer of PECVD regrowths is used on the epitaxial wafer of layer,
The effect of non-crystalline silicon (a-Si) layer is the formation aperiodicity gratings strips after ICP is etched；
(3) acyclic photoresist grating bar is prepared using electron beam lithography, mask is then used as using photoresist
Etching a-Si and form silicon dielectric grating bar, gratings strips diameter is bigger than VCSEL light-emitting window in preparation process, but than VCSEL table top
Diameter is small；
(4) photoetching is carried out to the epitaxial wafer for being etched to define grating using common litho machine, covered after development
The photoresist round platform of grating, its radius are single VCSEL laser mesas radiuses.In follow-up laser preparation process
In, covering the photoresist of grating can play a protective role to the grating formed, and this time be lithographically formed etching SiO2
The photoresist mask of layer；
(5) and then using ICP etching machines etching it is not photo-etched the SiO of glue round platform covering2Region, make VCSEL epitaxy junctions
Structure is exposed, and obtains and photoresist round platform SiO of a size2Round platform；
(6) photoetching is carried out again using the thicker AZ6130 photoresists of spin coating thickness, the AZ6130 photoetching obtained after development
Glue round table surface is than SiO that previous step is formed2Round table surface is big 3 μm；
(7) VCSEL epitaxial wafers are performed etching using ICP etching apparatus, etches into high aluminium component inside VCSEL epitaxial wafers
Layer；
(8) the VCSEL epitaxial wafers after etching, then the VCSEL epitaxial wafers cleaning drying be placed on 400 DEG C wet
Thermal oxidation furnace is aoxidized, and oxidization time is determined by required oxide-aperture size；
(9) SiO that a layer thickness is 200nm is grown using electron beam evaporation or PECVD2Insulating barrier；
(10) first time alignment, the size of alignment is electrode injection pore size, and its size is bigger than grating diameter, but is compared
VCSEL mesa diameters are small；
(11) the insulating barrier SiO inside hole carved using ICP or RIE etching method grips2Etching removes.
(12) second of alignment, the pore size of alignment is VCSEL light-emitting window sizes, and second of alignment uses negtive photoresist side
Continue lift-off techniques after an action of the bowels；
(13) Grown by Magnetron Sputtering p side electrode；
(14) lift-off techniques are done, the light-emitting window for being covered with metal electrode is exposed；
(15) VCSEL epitaxial wafers are thinned to 200 μ m thicks using unilateral attenuated polishing equipment；
(16) the long N faces electrode of magnetron sputtering apparatus is used after cleaning up；
(17) photoetching again, the photoresist that this time photoetching uses is as described in step (3), but the photoetching this time used
Glue is positive photoresist, and the chip that light-emitting window is not covered by photoresist is obtained after development；
(18) chip after step (17) processing is put into BOE corrosive liquids under erosion removal gratings strips that SiO2, formation are engraved
Empty high-contrast grating；
(19) by cleavage, test, encapsulation, the angle quickly high contrast grating vertical cavity surface of the integrated aperiodicity of scanning is obtained
Launch laser radar light source.
Quickly scanning integrates aperiodicity high-contrast grating vertical cavity surface-emitting laser radar light source to the angle of the present invention,
Its scan characteristic be by external high-speed pulse power supply be quickly respectively injected electric current to each or it is each row be integrated with it is identical
The light source alignment unit of deflection angle aperiodicity high-contrast grating realizes light extraction active scan.
Quickly scanning integrates the high contrast grating vertical cavity surface-emitting laser radar light source of aperiodicity to the angle of the present invention, can
To apply in wide field scanning and detecting laser radar.
Obviously, above-mentioned embodiment is gone back on the basis of the above description just for the sake of clearly explanation example
The variation or change of other forms can be made.Therefore, the obvious changes or variations thus amplified out still falls within this
Within the protection domain of invention.
Claims (7)
- Quickly 1. the integrated aperiodicity height of scanning contrasts grating vertical cavity surface-emitting laser radar light source to angle, from top to bottom successively Including：N faces electrode, substrate, N EDS maps formula Bragg reflections mirror layer, MQW active gain layer, oxidation current limitation aperture layer With P EDS maps formula Bragg reflection mirror layer, the MQW active gain layer, oxidation current limitation aperture layer and P EDS maps formulas Bragg reflection mirror layer forms the first table top, it is characterised in thatFirst table top is multiple, and is distributed in N EDS maps formula Bragg reflection mirror layer in array；It is provided with the second table top that multiple inside are less than the first table top with air layer and diameter on first table top, described the Two table tops are distributed on the first table top in array；Be provided with aperiodicity high-contrast grating layer on second table top, the aperiodicity high-contrast grating layer be by What aperiodicity height that can realize different deflection angles, different screen periods and dutycycle combined than degree gratings strips Aperiodicity height is than degree grating array；On first table top, the outside of second table top be provided with p side electrode.
- Quickly 2. the integrated aperiodicity height of scanning contrasts grating vertical cavity surface-emitting laser thunder to angle according to claim 1 Up to light source, it is characterised in that second table top is the Si of support aperiodicity high-contrast grating layer3N4Layer or SiO2Layer.
- Quickly 3. the integrated aperiodicity height of scanning contrasts grating vertical cavity surface-emitting laser thunder to angle according to claim 1 Up to light source, it is characterised in that the structure of second table top is cylindrical structural.
- Quickly 4. the integrated aperiodicity height of scanning contrasts grating vertical cavity surface-emitting laser thunder to angle according to claim 1 Up to light source, it is characterised in that the aperiodicity high-contrast grating layer is amorphous silicon layer.
- Quickly 5. the integrated aperiodicity height of scanning contrasts grating vertical cavity surface-emitting laser thunder to angle according to claim 1 Up to light source, it is characterised in that the aperiodicity height is monolithically integrated in second than degree grating array by minute manufacturing technology The surface of table top.
- Quickly 6. the integrated aperiodicity height of scanning contrasts grating vertical cavity surface-emitting laser thunder to angle according to claim 1 Up to the preparation method of light source, it is characterised in that the aperiodicity height passes through external high-velocity scanning pulse than degree grating array Power supply realizes the active scan of shoot laser.
- Quickly 7. the integrated aperiodicity height of scanning contrasts grating vertical cavity surface-emitting laser thunder to angle according to claim 1 Up to application of the light source in wide field scanning and detecting laser radar.
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Cited By (8)
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|---|---|---|---|---|
| CN108598867A (en) * | 2018-06-26 | 2018-09-28 | 扬州乾照光电有限公司 | Dbr structure chip and preparation method thereof |
| CN108879323A (en) * | 2018-06-26 | 2018-11-23 | 扬州乾照光电有限公司 | VCSEL chip of single beam laser and preparation method thereof |
| CN110676690A (en) * | 2019-10-16 | 2020-01-10 | 中国科学院半导体研究所 | Light beam shaping vertical cavity surface emitting laser integrated with high-contrast grating and simulation method thereof |
| CN111009820A (en) * | 2020-03-10 | 2020-04-14 | 常州纵慧芯光半导体科技有限公司 | Laser device and preparation method and application thereof |
| CN111106533A (en) * | 2019-12-21 | 2020-05-05 | 江西德瑞光电技术有限责任公司 | VCSEL chip and manufacturing method thereof |
| CN111211484A (en) * | 2020-03-04 | 2020-05-29 | 常州纵慧芯光半导体科技有限公司 | Vertical cavity surface emitting laser and manufacturing method and application thereof |
| CN113311410A (en) * | 2021-07-14 | 2021-08-27 | 浙江航天润博测控技术有限公司 | Obstacle avoidance laser radar transmitting module of helicopter |
| CN113708214A (en) * | 2021-07-21 | 2021-11-26 | 湖北光安伦芯片有限公司 | Dual-wavelength VCSEL structure based on selective area epitaxy technology and preparation method thereof |
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| CN108598867A (en) * | 2018-06-26 | 2018-09-28 | 扬州乾照光电有限公司 | Dbr structure chip and preparation method thereof |
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| CN111211484A (en) * | 2020-03-04 | 2020-05-29 | 常州纵慧芯光半导体科技有限公司 | Vertical cavity surface emitting laser and manufacturing method and application thereof |
| CN111009820A (en) * | 2020-03-10 | 2020-04-14 | 常州纵慧芯光半导体科技有限公司 | Laser device and preparation method and application thereof |
| CN113311410A (en) * | 2021-07-14 | 2021-08-27 | 浙江航天润博测控技术有限公司 | Obstacle avoidance laser radar transmitting module of helicopter |
| CN113311410B (en) * | 2021-07-14 | 2021-11-30 | 浙江航天润博测控技术有限公司 | Obstacle avoidance laser radar transmitting module of helicopter |
| CN113708214A (en) * | 2021-07-21 | 2021-11-26 | 湖北光安伦芯片有限公司 | Dual-wavelength VCSEL structure based on selective area epitaxy technology and preparation method thereof |
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