CN107493077A - A kind of wideband low noise amplifier circuit of Low-voltage Low-power - Google Patents

A kind of wideband low noise amplifier circuit of Low-voltage Low-power Download PDF

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Publication number
CN107493077A
CN107493077A CN201710777993.7A CN201710777993A CN107493077A CN 107493077 A CN107493077 A CN 107493077A CN 201710777993 A CN201710777993 A CN 201710777993A CN 107493077 A CN107493077 A CN 107493077A
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pmos
resistance
nmos tube
electric capacity
low
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谭君璋
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WUXI ZETAI MICROELECTRONICS CO Ltd
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WUXI ZETAI MICROELECTRONICS CO Ltd
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Priority to CN201710777993.7A priority Critical patent/CN107493077A/en
Publication of CN107493077A publication Critical patent/CN107493077A/en
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
    • H03F1/0211—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers with control of the supply voltage or current
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/26—Modifications of amplifiers to reduce influence of noise generated by amplifying elements
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/42—Modifications of amplifiers to extend the bandwidth
    • H03F1/48—Modifications of amplifiers to extend the bandwidth of aperiodic amplifiers
    • H03F1/483—Modifications of amplifiers to extend the bandwidth of aperiodic amplifiers with field-effect transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/56—Modifications of input or output impedances, not otherwise provided for
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/193—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F3/211—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/294—Indexing scheme relating to amplifiers the amplifier being a low noise amplifier [LNA]
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/372—Noise reduction and elimination in amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45031—Indexing scheme relating to differential amplifiers the differential amplifier amplifying transistors are compositions of multiple transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45156—At least one capacitor being added at the input of a dif amp
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45256—One or more reactive elements are added in the source circuit of the amplifying FETs of the dif amp

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)

Abstract

The invention provides a kind of wideband low noise amplifier circuit of Low-voltage Low-power, main PMOS input mutual conductance pipes MP0 and MP1, mutual conductance pipe self-bias resistor Rb0 and Rb1, output resistance including broadband matching network, NMOS input mutual conductance pipes MN0 and MN1, multiplexing current load, the current multiplexing mode of the wideband low noise amplifier inputted by improving MOS sources, the efficiency that electric current is converted into gain is improved to greatest extent, that is low-power consumption, while supply voltage is reduced to greatest extent.The wideband low noise amplifier circuit of the Low-voltage Low-power has the advantages of design science, practical, simple in construction, low in energy consumption, supply voltage is low.

Description

A kind of wideband low noise amplifier circuit of Low-voltage Low-power
Technical field
The present invention relates to a kind of circuit, specifically, relate to a kind of wideband low noise amplifier of Low-voltage Low-power Circuit.
Background technology
Broadband wireless communication technique is highly suitable for software radio exploitation, and wideband low noise amplifier is as wide band radio-frequency The key modules of receiver, study its low-voltage, the implementation method of low-power consumption has great significance.Existing CMOS broadbands low noise In acoustic amplifier technology, one of which adds broadband negative-feedback using metal-oxide-semiconductor grid end input amplifier and carrys out structural wideband Low ESR, But the negative-feedback in this framework inevitably introduces noise, if can also consume electric current using active negative-feedback.It is another The low-noise amplifier that technology is inputted using metal-oxide-semiconductor source, input impedance and noise are attained by relatively good effect, but higher Gain then need to consume electric current it is directly proportional.Also there is improved technology, be joined directly together using NMOS and PMOS source end, it is multiple It is added with electric current, output current small-signal by way of folding, improves electric current service efficiency, but so due to from power supply to ground The metal-oxide-semiconductor quantity of superposition is more, and electric current may flow through output resistance load again, so design can be relatively more tired under low suppling voltage Difficulty, on the other hand, the current source load folded for signal can also provide larger noise.
In order to solve the problem present on, people are seeking a kind of preferable technical solution always.
The content of the invention
The purpose of the present invention is that in view of the shortcomings of the prior art, so as to provide a kind of design science, practical, structure is simple The wideband low noise amplifier circuit of the low Low-voltage Low-power of single, low in energy consumption low noise, supply voltage.
To achieve these goals, the technical solution adopted in the present invention is：A kind of broadband low noise of Low-voltage Low-power Acoustic amplifier circuit, including PMOS MP0, PMOS MP1, PMOS MP2, PMOS MP3, NMOS tube MN0, NMOS tube MN1, Electric capacity Cc0, electric capacity Cc1, electric capacity Cc2, electric capacity Cc3, electric capacity Ccm, biasing module, resistance Rload0, resistance Rload1, chokes electricity Feel Lchoke1, choke induction Lchoke2, single-ended transfer difference broadband matching network, reception antenna and power vd D, the reception day Line connects the rf inputs Vip and rf inputs of amplifier circuit by the single-ended transfer difference broadband matching network respectively Vin, the rf inputs Vip are grounded by the choke induction Lchoke1, and the rf inputs Vip connects institute respectively NMOS tube MN0 source and the substrate terminal of the NMOS tube MN1 are stated, the rf inputs Vip is also connected by the electric capacity Cc0 The grid end of the NMOS tube MN1 is connect, the rf inputs Vip also passes through the source of the electric capacity Cc2 connections PMOS MP0 End, the source of the PMOS MP0 connect the drain terminal of the PMOS MP2, and the source of the PMOS MP2 connects the power supply VDD, the PMOS MP2 grid end connection voltage Vbias, the NMOS tube MN0 drain terminal connect the leakage of the PMOS MP0 End, one end of the resistance Rload0 connect the drain terminal of the PMOS MP0, and the other end of the resistance Rload0 passes through described Electric capacity Ccm is grounded, and the substrate terminal of the PMOS MP0 is also connected with the source of the PMOS MP1；The rf inputs Vin It is grounded by the choke induction Lchoke2, the rf inputs Vin connects source and the institute of the NMOS tube MN1 respectively NMOS tube MN0 substrate terminal is stated, the rf inputs Vin also passes through the grid of the electric capacity Cc1 connections NMOS tube MN0 End, the rf inputs Vin also by the source of the electric capacity Cc3 connections PMOS MP1, the PMOS MP1's Source is also connected with the drain terminal of the PMOS MP3, and the source of the PMOS MP3 connects the power vd D, the PMOS MP3 grid end connection voltage Vbias, the NMOS tube MN1 drain terminal connect the drain terminal of the PMOS MP1, the resistance Rload1 one end connects the drain terminal of the PMOS MP1, and the other end of the resistance Rload1 is connect by the electric capacity Ccm Ground, the substrate terminal of the PMOS MP1 are also connected with the source of the PMOS MP0；The NMOS tube MN0, the NMOS tube MN1, the PMOS MP0 and the PMOS MP1 are biased by the biasing module respectively.
Based on above-mentioned, the biasing module is automatic biasing module, including resistance Rb0 and resistance Rb1, the resistance Rb0's One end connects the drain terminal of the NMOS tube MN0 and the drain terminal of the PMOS MP0, the other end difference of the resistance Rb0 respectively Connect the grid end of the NMOS tube MN0 and the grid end of the PMOS MP0；One end of the resistance Rb1 connects described respectively The drain terminal of NMOS tube MN1 drain terminal and the PMOS MP1, the other end of the resistance Rb1 connect the NMOS tube MN1 respectively Grid end and the PMOS MP1 grid end.
Based on above-mentioned, the biasing module is independent bias module, including electric capacity Cc4, electric capacity Cc5, resistance Rb2, resistance Rb3, resistance Rb4 and resistance Rb5, the NMOS tube MN0 grid end are described by the resistance Rb2 connection power supplys Vbias_n NMOS tube MN1 grid end passes through the resistance Rb3 connection power supplys Vbias_n；The grid end of the PMOS MP0 passes through the resistance Rb5 connection power supplys Vbias_p, the PMOS MP0 source also pass sequentially through the electric capacity Cc4 and connected with the resistance Rb4 Power supply Vbias_p, the PMOS MP1 grid end by the resistance Rb4 connection power supplys Vbias_p, the PMOS MP1's Source also passes sequentially through the electric capacity Cc5 and connects power supply Vbias_p with the resistance Rb5.
The present invention is compared with the prior art with prominent substantive distinguishing features and significantly progressive, specifically, of the invention logical The design to the amplifier circuit in low noise is crossed, after input difference voltage, the low-noise amplifier is made most by current multiplexing The multiplication factor of the mutual conductance, i.e. input voltage to output current that can be provided to limits using metal-oxide-semiconductor, and then obtain bigger increasing Beneficial and smaller noise coefficient, it has design science, practical, simple in construction, low noise low in energy consumption, supply voltage low Advantage.
Brief description of the drawings
Fig. 1 is the automatic biasing type electrical block diagram of the present invention.
Fig. 2 is the independent bias type electrical block diagram of the present invention.
Embodiment
Below by embodiment, technical scheme is described in further detail.
Embodiment 1
As shown in figure 1, a kind of wideband low noise amplifier circuit of Low-voltage Low-power, including PMOS MP0, PMOS MP1, PMOS MP2, PMOS MP3, NMOS tube MN0, NMOS tube MN1, electric capacity Cc0, electric capacity Cc1, electric capacity Cc2, electric capacity Cc3, Electric capacity Ccm, biasing module, resistance Rload0, resistance Rload1, choke induction Lchoke1, choke induction Lchoke2, single-ended turn Differential broadband matching network, reception antenna and power vd D, the reception antenna pass through the single-ended transfer difference broadband matching network The rf inputs Vip and rf inputs Vin of amplifier circuit are connected respectively, and the rf inputs Vip is gripped by described Inductance Lchoke1 ground connection is flowed, the rf inputs Vip connects the source of the NMOS tube MN0 and the NMOS tube MN1 respectively Substrate terminal, the rf inputs Vip is also defeated by the grid end of the electric capacity Cc0 connections NMOS tube MN1, the radio frequency Enter to hold sources of the Vip also by the electric capacity Cc2 connections PMOS MP0, described in the source connection of the PMOS MP0 PMOS MP2 drain terminal, the source of the PMOS MP2 connect the power vd D, the grid end connection electricity of the PMOS MP2 Vbias is pressed, the drain terminal of the NMOS tube MN0 connects the drain terminal of the PMOS MP0, one end connection institute of the resistance Rload0 PMOS MP0 drain terminal is stated, the other end of the resistance Rload0 is grounded by the electric capacity Ccm, the lining of the PMOS MP0 Bottom is also connected with the source of the PMOS MP1；The rf inputs Vin is grounded by the choke induction Lchoke2, institute State rf inputs Vin and connect the source of the NMOS tube MN1 and the substrate terminal of the NMOS tube MN0 respectively, the radio frequency is defeated Enter to hold grid ends of the Vin also by the electric capacity Cc1 connections NMOS tube MN0, the rf inputs Vin also passes through the electricity Hold Cc3 connections PMOS MP1 source, the source of the PMOS MP1 is also connected with the drain terminal of the PMOS MP3, institute The source for stating PMOS MP3 connects the power vd D, the grid end connection voltage Vbias of the PMOS MP3, the NMOS tube MN1 drain terminal connects the drain terminal of the PMOS MP1, and one end of the resistance Rload1 connects the drain terminal of the PMOS MP1, The other end of the resistance Rload1 is grounded by the electric capacity Ccm, and the substrate terminal of the PMOS MP1 is also connected with the PMOS Pipe MP0 source；The NMOS tube MN0, the NMOS tube MN1, the PMOS MP0 and the PMOS MP1 pass through respectively The biasing module is biased.
Input difference voltage, namely Vip-Vin, current multiplexing make the low-noise amplifier use metal-oxide-semiconductor to greatest extent The multiplication factor of the mutual conductance, i.e. input voltage to output current that can provide, and then obtain bigger gain and smaller noise system Number.The electric capacity Cc2 and PMOS MP0 and electric capacity Cc3 and PMOS MP1 forms high-pass filtering input, with most Limits reduce decay.The NMOS tube MN0, the output current of the PMOS MP0 flow through the resistance Rload0 and institute State NMOS tube MN1, the output current of the PMOS MP1 flows through the resistance Rload1, formation signal output voltage.
Preferably, the biasing module is automatic biasing module, including resistance Rb0 and resistance Rb1, the one of the resistance Rb0 End connects the drain terminal of the NMOS tube MN0 and the drain terminal of the PMOS MP0 respectively, and the other end of the resistance Rb0 connects respectively Connect the grid end of the NMOS tube MN0 and the grid end of the PMOS MP0；One end of the resistance Rb1 connects the NMOS respectively The drain terminal of pipe MN1 drain terminal and the PMOS MP1, the other end of the resistance Rb1 connect the grid of the NMOS tube MN1 respectively End and the grid end of the PMOS MP1.
Input difference voltage Vinput_diff=(Vip-Vin), current multiplexing makes the low-noise amplifier use to greatest extent The multiplication factor of mutual conductance, i.e. input voltage to output current that metal-oxide-semiconductor can provide.Wherein described NMOS tube MN0 and described It is gm that the mutual conductance that PMOS MP0 is provided, which has altogether,MN0+gmbMN0+gmMP0+gmbMP0, the NMOS tube MN1 and the PMOS MP1 are carried It is gm that the mutual conductance of confession, which has altogether,MN0+gmbMN0+gmMP0+gmbMP0.Bigger mutual conductance is advantageous to obtain bigger gain and smaller made an uproar Sonic system number.
In the case of Differential Input, design makes both sides symmetrical, i.e.,
Rload0=Rload1, then
gmMN0=gmMN1；gmbMN0=gmbMN1；gmMP0=gmMP1；gmbMP0=gmbMP1.The input of the low-noise amplifier Impedance is：Wherein gmMN=gmMN0=gmMN1, gmbMN=gmbMN0= gmbMN1, gmMP=gmMP0=gmMP1, gmbMP=gmbMP0=gmbMP1.Current multiplexing allows to be realized with smaller electric current 50 Ω wide band radio-frequency input impedance.The electric capacity Cc2 and the electric capacity Cc3 may arrive Vip to Vip_Cc2 and Vin Decay, the electric capacity Cc2 and the PMOS MP0 and electric capacity Cc3 and PMOS MP1 difference shapes be present in Vin_Cc3 Inputted into high-pass filtering, its Frequency point for decaying 3dB of the PMOS MP0 is Similarly, the electric capacity Cc2 and the electric capacity Cc3 capacitance will cause this high-pass filtering decay 3dB frequencies to the PMOS MP1 Rate point is much smaller than the minimum value of antenna rf incoming frequency, thus decay is reduced can as best one can.
Antenna to low-noise amplifier input due to being impedance matching, so being put from the voltage of antenna end to low noise The gain of big device input voltage is：Output small-signal current flows through Rload and formed caused by above-mentioned mutual conductance Output voltage, the circuit input voltage are to output voltage gain：
R in formulaload=Rload0=Rload1.Overall gain from antenna end to output voltage is：
Current multiplexing structure is than without using current multiplexing, under identical power consumption, overall gain can typically improve about 3dB。
Because the substrate of metal-oxide-semiconductor is also cross-coupled connection, in the absence of body bias effect, Vth will not also become big；DC current Also output load resistance is not flowed through, does not have attrition voltage nargin；In summary, the supply voltage of low-noise amplifier can compare Relatively low, minimum supply voltage is：
VDDMIN=VovMP2+(VthMP0+VovMP0)+(VthMN0+VovMN0)
Wherein, Vov is the overdrive voltage of metal-oxide-semiconductor, and Vth is the unlatching threshold voltage of metal-oxide-semiconductor.
The metal-oxide-semiconductor source of fully differential and the small-signal cross-couplings of grid end, in the case of impedance matching, symmetrical both sides Noise can cancel out each other a part.Antenna noise is removed, output current overall noise is：
The equivalent noise to antenna input is：Assuming that γN≈ γP=1, then noise coefficient is about：NF≈1.76dB.
Embodiment 2
The present embodiment and the difference of embodiment 1 are：As shown in Fig. 2 the biasing module is independent bias module, including Electric capacity Cc4, electric capacity Cc5, resistance Rb2, resistance Rb3, resistance Rb4 and resistance Rb5, the NMOS tube MN0 grid end pass through described Resistance Rb2 connection power supplys Vbias_n, the NMOS tube MN1 grid end pass through the resistance Rb3 connection power supplys Vbias_n；It is described PMOS MP0 grid end also passes sequentially through institute by the resistance Rb5 connection power supplys Vbias_p, the source of the PMOS MP0 State electric capacity Cc4 power supply Vbias_p, PMOS MP1 grid end is connected with the resistance Rb4 and pass through the resistance Rb4 connections Power supply Vbias_p, the PMOS MP1 source also pass sequentially through the electric capacity Cc5 and connect power supply with the resistance Rb5 Vbias_p.NMOS mutual conductances pipe and PMOS mutual conductance pipes are independently biased, and minimum power supply is reduced by compressing output voltage swing Voltage.
Finally it should be noted that:The above embodiments are merely illustrative of the technical scheme of the present invention and are not intended to be limiting thereof；To the greatest extent The present invention is described in detail with reference to preferred embodiments for pipe, those of ordinary skills in the art should understand that：Still The embodiment of the present invention can be modified or equivalent substitution is carried out to some technical characteristics；Without departing from this hair The spirit of bright technical scheme, it all should cover among the claimed technical scheme scope of the present invention.

Claims (3)

  1. A kind of 1. wideband low noise amplifier circuit of Low-voltage Low-power, it is characterised in that：Including PMOS MP0, PMOS MP1, PMOS MP2, PMOS MP3, NMOS tube MN0, NMOS tube MN1, electric capacity Cc0, electric capacity Cc1, electric capacity Cc2, electric capacity Cc3, Electric capacity Ccm, biasing module, resistance Rload0, resistance Rload1, choke induction Lchoke1, choke induction Lchoke2, single-ended turn Differential broadband matching network, reception antenna and power vd D,
    The reception antenna connects the rf inputs of amplifier circuit by the single-ended transfer difference broadband matching network respectively Vip and rf inputs Vin,
    The rf inputs Vip is grounded by the choke induction Lchoke1, and the rf inputs Vip connects institute respectively NMOS tube MN0 source and the substrate terminal of the NMOS tube MN1 are stated, the rf inputs Vip is also connected by the electric capacity Cc0 The grid end of the NMOS tube MN1 is connect, the rf inputs Vip also passes through the source of the electric capacity Cc2 connections PMOS MP0 End, the source of the PMOS MP0 connect the drain terminal of the PMOS MP2, and the source of the PMOS MP2 connects the power supply VDD, the PMOS MP2 grid end connection voltage Vbias, the NMOS tube MN0 drain terminal connect the leakage of the PMOS MP0 End, one end of the resistance Rload0 connect the drain terminal of the PMOS MP0, and the other end of the resistance Rload0 passes through described Electric capacity Ccm is grounded, and the substrate terminal of the PMOS MP0 is also connected with the source of the PMOS MP1；
    The rf inputs Vin is grounded by the choke induction Lchoke2, and the rf inputs Vin connects institute respectively NMOS tube MN1 source and the substrate terminal of the NMOS tube MN0 are stated, the rf inputs Vin is also connected by the electric capacity Cc1 The grid end of the NMOS tube MN0 is connect, the rf inputs Vin also passes through the source of the electric capacity Cc3 connections PMOS MP1 End, the source of the PMOS MP1 are also connected with the drain terminal of the PMOS MP3, and the source of the PMOS MP3 connects the electricity Source VDD, the PMOS MP3 grid end connection voltage Vbias, the NMOS tube MN1 drain terminal connect the PMOS MP1's Drain terminal, one end of the resistance Rload1 connect the drain terminal of the PMOS MP1, and the other end of the resistance Rload1 passes through institute Electric capacity Ccm ground connection is stated, the substrate terminal of the PMOS MP1 is also connected with the source of the PMOS MP0；
    The NMOS tube MN0, the NMOS tube MN1, the PMOS MP0 and the PMOS MP1 pass through the biasing respectively Module is biased.
  2. 2. the wideband low noise amplifier circuit of Low-voltage Low-power according to claim 1, it is characterised in that：It is described inclined It is automatic biasing module to put module, including resistance Rb0 and resistance Rb1, one end of the resistance Rb0 connect the NMOS tube respectively The drain terminal of MN0 drain terminal and the PMOS MP0, the other end of the resistance Rb0 connect the grid end of the NMOS tube MN0 respectively With the grid end of the PMOS MP0；One end of the resistance Rb1 connects the drain terminal of the NMOS tube MN1 and the PMOS respectively Pipe MP1 drain terminal, the other end of the resistance Rb1 connect the grid end of the NMOS tube MN1 and the grid of the PMOS MP1 respectively End.
  3. 3. the wideband low noise amplifier circuit of Low-voltage Low-power according to claim 1, it is characterised in that：It is described inclined It is independent bias module to put module, including electric capacity Cc4, electric capacity Cc5, resistance Rb2, resistance Rb3, resistance Rb4 and resistance Rb5, institute The grid end for stating NMOS tube MN0 passes through the electricity by the resistance Rb2 connection power supplys Vbias_n, the grid end of the NMOS tube MN1 Hinder Rb3 connection power supplys Vbias_n；
    The grid end of the PMOS MP0 by the resistance Rb5 connection power supplys Vbias_p, the source of the PMOS MP0 also according to Secondary that power supply Vbias_p is connected with the resistance Rb4 by the electric capacity Cc4, the grid end of the PMOS MP1 passes through the resistance Rb4 connection power supplys Vbias_p, the PMOS MP1 source also pass sequentially through the electric capacity Cc5 and connected with the resistance Rb5 Power supply Vbias_p.
CN201710777993.7A 2017-09-01 2017-09-01 A kind of wideband low noise amplifier circuit of Low-voltage Low-power Pending CN107493077A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112039492A (en) * 2020-08-06 2020-12-04 浙江大学 High-linearity transconductance amplifier applied to physiological signal filter

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN202282762U (en) * 2011-10-18 2012-06-20 东南大学 Low-power-consumption broadband low-noise amplifier
CN103762947A (en) * 2014-01-13 2014-04-30 东南大学 Cross-coupling input low-noise trans-conductance amplifier
CN105340185A (en) * 2013-03-11 2016-02-17 华为技术有限公司 Current conveyor circuit and method
CN106230389A (en) * 2016-09-27 2016-12-14 无锡中科微电子工业技术研究院有限责任公司 high-gain low-noise amplifier
CN106936393A (en) * 2017-03-07 2017-07-07 东南大学 A kind of Low-power-consumptiohigh-gain high-gain broadband low noise difference amplifier

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN202282762U (en) * 2011-10-18 2012-06-20 东南大学 Low-power-consumption broadband low-noise amplifier
CN105340185A (en) * 2013-03-11 2016-02-17 华为技术有限公司 Current conveyor circuit and method
CN103762947A (en) * 2014-01-13 2014-04-30 东南大学 Cross-coupling input low-noise trans-conductance amplifier
CN106230389A (en) * 2016-09-27 2016-12-14 无锡中科微电子工业技术研究院有限责任公司 high-gain low-noise amplifier
CN106936393A (en) * 2017-03-07 2017-07-07 东南大学 A kind of Low-power-consumptiohigh-gain high-gain broadband low noise difference amplifier

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112039492A (en) * 2020-08-06 2020-12-04 浙江大学 High-linearity transconductance amplifier applied to physiological signal filter
CN112039492B (en) * 2020-08-06 2021-04-27 浙江大学 High-linearity transconductance amplifier applied to physiological signal filter

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Application publication date: 20171219