CN107482473B - A kind of Electroabsorption Modulated Laser and its design method of part grating - Google Patents
A kind of Electroabsorption Modulated Laser and its design method of part grating Download PDFInfo
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- CN107482473B CN107482473B CN201710735221.7A CN201710735221A CN107482473B CN 107482473 B CN107482473 B CN 107482473B CN 201710735221 A CN201710735221 A CN 201710735221A CN 107482473 B CN107482473 B CN 107482473B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/0601—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium comprising an absorbing region
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
- H01S5/125—Distributed Bragg reflector [DBR] lasers
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Abstract
The present invention relates to field of laser device technology, a kind of part grating Electroabsorption Modulated Laser and its design method are provided.The Electroabsorption Modulated Laser of part of grating is made of laser region and modulator region, the region for being provided with Bragg grating is coupled with modulator region, the a length of 400um of the chamber of laser, the a length of 210um of the chamber of modulator, no-raster zone length is 220um, and the length of grating region is 180um；The linear gain coefficient of the Electroabsorption Modulated Laser of part grating is controlled 6 × 10‑20m2；It is reflectivity is 1/1000 rank that the reflectance coating of modulator region light-emitting surface, which is arranged in, in the Electroabsorption Modulated Laser of part grating.The present invention substitutes existing full raster structure by the part optical grating construction of design, and it is the quality factor that quality factor in the case of 1/1000 rank has reached 1/10000 rank under full raster structure that realize reflectance coating under the optical grating construction of part, which be reflectivity,.
Description
[technical field]
The present invention relates to field of laser device technology, a kind of Electroabsorption Modulated Laser more particularly to part grating and its
Design method.
[background technique]
High speed light source is the core component of optical communication system, is always the research hotspot of optoelectronic areas.In numerous light
In the scheme of source, electroabsorption modulator (Electro absorption, writes a Chinese character in simplified form are as follows: EAM) and distributed feedback laser
The monolithic integrated device of (Distributed Feedback, writes a Chinese character in simplified form are as follows: DFB) is with compact-sized, manufacture craft is compatible, chirp
The remarkable advantages such as small, low in energy consumption, functional expansionary is strong, are the ideal optical signals of wavelength division multiplexed network, optical TDM network
Source.
In data transmission system, semiconductor laser light output end it is additional light feedback can to laser threshold value electricity
Many indexs such as stream, Slop efficiency, spectral line width have an impact.It is well known that electroabsorption modulator feeds back right and wrong to additional light
It is often sensitive, the especially rate semiconductor laser chip that reaches 10Gb/s or more.In order to reduce the light of facet feedback to sharp
The influence of light device chip, there are two types of general settling modes: 1, being to plate one layer of anti-reflection film in light-emitting surface, reduce light reflection.Gao Zeng
The film of saturating rate is very high to filming equipment requirement, expensive, also, due to difficulty of processing, the anti-reflection film of a ten thousandth
It is popularized in each processing supplier currently not yet.2, light-emitting surface is made into waveguide bend, after going out the angulation change of light in this way, instead
The light injected into modulator department can reduce, as shown in Figure 1, the complex process of this mode, the chip package in later period is difficult big.
[summary of the invention]
The technical problem to be solved by the present invention is to be coated with how in the case where linear gain coefficient is identical or approximate situation
In the Electroabsorption Modulated Laser of the reflectance coating of 1/1000 grade of reflectivity, the whole of the reflectance coating of 1/10000 grade of reflectivity is obtained
The quality factor of the Electroabsorption Modulated Laser O of grating.
The present invention adopts the following technical scheme:
A kind of Electroabsorption Modulated Laser and its design method of part grating
In a first aspect, the present invention provides a kind of Electroabsorption Modulated Laser of part grating, the electric absorption of part grating
Modulation laser is made of laser region and modulator region, wherein laser region includes unglazed gate region and setting again
There is the region of Bragg grating, the region for being provided with Bragg grating is coupled with the modulator region, specific:
The a length of 350um-450um of the chamber of the laser, a length of 180-270um of the chamber of the modulator；Wherein, laser
The length of middle grating region is 150-200um；
The linear gain coefficient of the Electroabsorption Modulated Laser of the part grating is controlled in 5-7 × 10-20m2Between；
The reflectivity of the reflectance coating of modulator region light-emitting surface is arranged in the Electroabsorption Modulated Laser of the part grating
For 1/1000 rank.
Preferably, the active area width is 1.5-2.0um, active area thickness 25-35nm.
Preferably, the gain compression factor is 2.5*10-23m3, EA peak absorption is 1.32 × 106。
Second aspect, the present invention also provides a kind of Electroabsorption Modulated Laser of part grating, the electricity of part grating is inhaled
It receives modulation laser to be made of laser region and modulator region, wherein laser region includes unglazed gate region and sets again
It is equipped with the region of Bragg grating, the region for being provided with Bragg grating is coupled with the modulator region, specific:
The a length of 400um of the chamber of the laser, a length of 210um of the chamber of the modulator, no-raster zone length are
220um, the length of grating region are 180um；
The linear gain coefficient of the Electroabsorption Modulated Laser of the part grating is controlled 6 × 10-20m2；
The reflectivity of the reflectance coating of modulator region light-emitting surface is arranged in the Electroabsorption Modulated Laser of the part grating
For 1/1000 rank.
Preferably, the active area width is 1.5-2.0um, active area thickness 25-35nm.
Preferably, the gain compression factor is 2.5*10-23m3, EA peak absorption is 1.32 × 106。
The third aspect, the present invention also provides a kind of Electroabsorption Modulated Laser design methods of part grating, quasi- respectively
The Electroabsorption Modulated Laser of the part grating of the Electroabsorption Modulated Laser O and corresponding claims 1-3 of standby whole grating,
In, the Electroabsorption Modulated Laser O parameter of whole gratings includes a length of 400um of chamber of laser, and the chamber of the modulator is a length of
210um, the length of grating region are 400um；Wherein, the Electroabsorption Modulated Laser of part grating includes A, B, C, D and E five
A, identical parameter includes a length of 400um of chamber of laser, institute in Electroabsorption Modulated Laser A, B, C, D and E of part grating
The a length of 210um of chamber of modulator is stated, discrepancy is the length of the grating region of the Electroabsorption Modulated Laser A of part grating
For 125um, the length of the grating region of the Electroabsorption Modulated Laser B of part grating is 150um, the electric absorption tune of part grating
The length of the grating region of laser C processed is 180um, the length of the grating region of the Electroabsorption Modulated Laser D of part grating
For 200um, the length of the grating region of the Electroabsorption Modulated Laser E of part grating is 250um；Also, respectively correspond each ginseng
The Electroabsorption Modulated Laser of part grating under several, design reflectivity are anti-for the light-emitting surface of 1/100 rank and 1/1000 rank
Film is penetrated, and correspondence is identified as A-100, A-1000；B-100, B-1000；C-100, C-1000；D-100, D-1000；E-100, E-
1000, wherein O-100, O-1000, O-10000 are the Electroabsorption Modulated Laser O of whole gratings respectively in smooth surface reflectance coating
Reflectivity is 1/100 rank, the mark of 1/1000 rank and 1/10000 rank, and the design method includes:
Determine the Electroabsorption Modulated Laser O-100 of whole grating, O-1000, the respective quality of O-10000 three
Variation corresponding relationship of the factor Q relative to linear gain coefficient；
The Electroabsorption Modulated Laser A-100, A-1000 of part of detecting grating respectively；B-100, B-1000；C-100, C-
1000；D-100, D-1000；The quality factor of E-100, E-1000 under different linear gain coefficients；
According to formulaObtain the deviation of each Electroabsorption Modulated Laser because
Sub- Δ Q(i)With linear gain index variation rule；Wherein, i ∈ [O, A, B, C, D, E], Q(i)(Rf=10-3) it is electro-absorption modulation
Quality factor expression formula when the reflectivity Rf in reflectance coating of laser i is 1/1000 rank；Q(i)(Rf=10-2) it is that electricity is inhaled
Quality factor expression formula when the reflectivity Rf in reflectance coating for receiving modulation laser i is 1/100 rank；
It obtains in linear gain value being 6 × 10 by test-20m2When, the electro-absorption modulation of the corresponding part grating swashs
There is the first result of the wave crest of change curve in the respective deviation factors of light device B, C and D；And the electro-absorption modulation of part grating
The respective deviation factors of Electroabsorption Modulated Laser O of laser C and whole gratings are 6 × 10 in linear gain value-20m2When,
There is the second result of the maximum different value between the two change curve；
It is determined according to first result and the second result, the laser in the Electroabsorption Modulated Laser of part grating
The a length of 400um of chamber, a length of 210um of the chamber of the modulator, the length of grating region are 180um, linear gain coefficient is 6 ×
10-20m2When, the quality factor q when the reflectivity Rf of corresponding reflectance coating is 1/1000 rank(C)(Rf=10-3), it is equal to complete
The a length of 400um of chamber of laser, a length of 210um of the chamber of the modulator in the Electroabsorption Modulated Laser O of portion's grating, it is linear to increase
Beneficial coefficient is 6 × 10-20m2When, the quality factor q when the reflectivity Rf of corresponding reflectance coating is 1/10000 rank(O)(Rf=10-4).That is quality factor q(C)(Rf=10-3) and quality factor q(O)(Rf=10-4) approximately equal；Wherein, Q(O)(Rf=10-4) be
Quality factor expression when the reflectivity Rf in reflectance coating of the Electroabsorption Modulated Laser O of whole gratings is 1/10000 rank
Formula.
Compared with prior art, the beneficial effects of the present invention are: in embodiments of the present invention, by part grating
The EML of EML (including A, B, C, D and E) and whole gratings compares test experiments, has obtained two more crucial parts
The performance inflection point of grating length, as shown in Figure 4 (wherein, abscissa is linear gain coefficient, and ordinate is deviation Q factor),
Middle grating section length is that the EMLE of the part grating of the EMLA and 250um of the part grating of 125um is shown and whole gratings
The same monotonic increase variation tendency of EML, i.e. the quality factor of A-100 and A-1000 is presented with the variation of linear gain coefficient
Out relatively stable proportionate relationship and the quality factor of E-100 and E-1000 with the variation of linear gain coefficient show compared with
For stable proportionate relationship (as shown in two slope variation more uniform curves in Fig. 4).And for B-100 and B-1000, C-
For 100 and C-1000 and D-100 and D-1000, three is 6 × 10 in linear gain-20m2With 8 × 10-20m2On show
Maximum value, also, C and D is being 6 × 10 by linear gain-20m2Downward trend is just showed later, and E is by linear
Gain is 8 × 10-20m2Just show downward trend later, therefore, assuming that part grating EML reflecting surface be 1/100 feelings
It is little with quality factor difference of the EML of existing whole gratings when reflecting surface is 1/100 under condition, as shown in figure 3, then may be used
Judgement C-1000 and D-1000 is 6 × 10 in linear gain-20m2Position quality factor it is opposite with respective C-100 and D-
100, under identical linear gain condition, the maximum difference with quality factor.It is compared O- by C-1000 shown in fig. 5
1000 are similarly 6 × 10 in linear gain-20m2In the case of, there are maximum deviation factors differences, therefore, can further prop up
Support possesses optimal quality factor distance for O-1000 in the position C-1000.By in Fig. 5, what the longitudinal axis was shown
Difference reaches 6 × 10-20m2Left and right, passes through formulaWithIt can be according to the equation after variationQ is calculated(C)(Rf=10-3) it is approximately equal to Q(O)(Rf=10-3) 100.3Times, that is, it is approximately equal to 2 times of size relation；Wherein, Q(O)(Rf=10-2) and Q(C)(Rf
=10-2) approximately uniform, when processing, is directly about fallen.The quality factor studied as shown in figure 1 in prior art theory can be reached
Promotion relationship, can be from Fig. 1 when linear gain coefficient is 6, and the EMLC of part grating can reach the product of 2*17=34
Prime factor effect, slightly above Q shown in Fig. 1(O)(Rf=10-4) quality factor can achieve the effect that.Being provided with industry can be achieved
Property, it not only reduces under the premise of reaching specified quality factor, for the reflectivity design requirement of light-emitting surface reflectance coating, moreover, mentioning
The high use scope of 1/1000 reflective materials.
[Detailed description of the invention]
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, to embodiment or will show below
There is attached drawing needed in technical description to be briefly described, it should be apparent that, the accompanying drawings in the following description is only this
Some embodiments of invention for those of ordinary skill in the art without creative efforts, can be with
Other attached drawings are obtained according to these attached drawings.
Fig. 1 is existing a kind of electric absorption modulated laser structure signal for reducing light-emitting surface reflectivity provided by the invention
Figure；
Fig. 2 is that the embodiment of the present invention provides a kind of Electroabsorption Modulated Laser design method process signal of part grating
Figure；
Fig. 3 is that the Electroabsorption Modulated Laser of optical grating constructions whole in the prior art provided in an embodiment of the present invention is being coated with
Quality factor in the case of the reflectance coating of different reflectivity is with linear gain index variation relation schematic diagram；
Fig. 4 is that the embodiment of the present invention provides the Electroabsorption Modulated Laser deviation factors of different grating lengths with linear gain
The schematic diagram of index variation；
Fig. 5 is that the embodiment of the present invention provides whole Electroabsorption Modulated Lasers of grating and the electro-absorption modulation of part grating
The deviation factors of laser with linear gain index variation schematic diagram；
Fig. 6 is a kind of structural schematic diagram for the Electroabsorption Modulated Laser that the embodiment of the present invention provides part optical grating construction.
[specific embodiment]
In order to make the objectives, technical solutions, and advantages of the present invention clearer, with reference to the accompanying drawings and embodiments, right
The present invention is further elaborated.It should be appreciated that the specific embodiments described herein are merely illustrative of the present invention, and
It is not used in the restriction present invention.
In the description of the present invention, term "inner", "outside", " longitudinal direction ", " transverse direction ", "upper", "lower", "top", "bottom" etc. refer to
The orientation or positional relationship shown be based on the orientation or positional relationship shown in the drawings, be merely for convenience of description the present invention rather than
It is required that the present invention must be constructed and operated in a specific orientation, therefore it is not construed as limitation of the present invention.
In addition, as long as technical characteristic involved in the various embodiments of the present invention described below is each other not
Constituting conflict can be combined with each other.
Because influence of the feedback light to EML chip is bigger, dynamic characteristic and static characteristic are different, are difficult in product
It is screened when batch testing.And it includes light power and Spectral Properties that present test equipment, which only measures its static characteristic,
Property, it is difficult to ensure that under its high speed light field consistency.The present invention is exactly to redesign and optimize the structure of electroabsorption modulator,
To laser introducing portion ripple grating, optimize the length and gain coefficient of grating, reach reduction end face reflection, guarantees light field one
The effect of cause property.
Assessing EML chip performance, there are two indexs: one is side mode suppression ratio (SMSR), and second is quality factor.It is right
The part DFB of highly reflecting films is plated in shady face, work is to obtain high optical power and be output to light-emitting surface, entire laser
Performance it is very sensitive to the phase waviness inside shady face solution, and the reason of phase fluctuation be the error of cleavage surface.Based on this
A reason, the phase error between the face HR and DFB grating are very rambunctious in the fabrication process.The light of the end face of EML chip is anti-
The fluctuation for the density that can cause photon in laser chamber, carrier and the fluctuation of relative phase are penetrated, the change of spectral characteristic is caused.
It is the main reason for causing the end DFB mode shakiness and signal to weaken that light feedback, which causes shady face phase fluctuation,.
Embodiment 1:
The embodiment of the present invention 1 provides a kind of Electroabsorption Modulated Laser design method of part grating, prepares respectively complete
The Electroabsorption Modulated Laser O of portion's grating and the Electroabsorption Modulated Laser of part grating, wherein the electric absorption tune of whole gratings
Laser (Electro-absorption modulated laser, write a Chinese character in simplified form are as follows: EML) O parameter processed includes that the chamber of laser is long
For 400um, a length of 210um of the chamber of the modulator, the length of grating region is 400um；Wherein, the electric absorption tune of part grating
Laser processed includes A, B, C, D and E five, identical parameter packet in Electroabsorption Modulated Laser A, B, C, D and E of part grating
The a length of 400um of chamber of laser, a length of 210um of the chamber of the modulator are included, discrepancy is the electric absorption tune of part grating
The length of the grating region of laser A processed is 125um, the length of the grating region of the Electroabsorption Modulated Laser B of part grating
For 150um, the length of the grating region of the Electroabsorption Modulated Laser C of part grating is 180um, the electric absorption tune of part grating
The length of the grating region of laser D processed is 200um, the length of the grating region of the Electroabsorption Modulated Laser E of part grating
For 250um；Also, the Electroabsorption Modulated Laser of the part grating under each parameter is respectively corresponded, design reflectivity is 1/100 grade
Other and 1/1000 rank light-emitting surface reflectance coating, and correspondence is identified as A-100, A-1000；B-100, B-1000；C-100, C-
1000；D-100, D-1000；E-100, E-1000, wherein O-100, O-1000, O-10000 are the electric absorption tune of whole gratings
Laser O processed is respectively 1/100 rank, the mark of 1/1000 rank and 1/10000 rank in the reflectivity of smooth surface reflectance coating.It removes
Outside the key parameter of above-mentioned influence embodiment of the present invention test result, for being specifically used for the electro-absorption modulation laser of test
Device, the embodiment of the invention also provides a set of more complete ambient parameters, are detailed in following table:
| Parameter | Value | Unit | Parameter | Value | Unit |
| Active area width | 1.8 | Um | Coupling factor | 5714 | 1/m |
| Active area thickness | 30 | nm | The gain compression factor | 2.5*10-23 | m3 |
| Light restriction factor | 0.075 | EA peak absorption | 1.32×106 | 1/m | |
| Internal loss | 1500 | 1/m | Unglazed gate region | 200-250 |
Laser, modulator and/or part grating region proposed in ambient parameters and the embodiment of the present invention in above-mentioned table
Length combines, and is capable of providing and is made to beat the more complete parameter value of testing laser device.Next, will be in conjunction in attached drawing and text
Hold, is specifically described and how to obtain the preferred design scheme of the embodiment of the present invention.
As shown in Fig. 2, the design method process specifically includes the following contents:
In step 201, the EML laser O-100 of whole grating is determined, O-1000, O-10000 three is respective
Variation corresponding relationship of the quality factor q relative to linear gain coefficient.
Wherein, linear gain coefficient is connected with carrier density, and carrier density is generally N=1*10^24
(a/m^3), linear gain coefficient * carrier density N indicate carrier number in unit length.
Wherein, which is according to paper " Highly Residual Facet Reflection Immune
EML Devices by Enhancing Laser Dynamics》Puspa Devi Pukhrambam,San-Liang Lee,
What the conclusion obtained in Chun-Liang Yang-IEEE Photonics Conference-2016 directly obtained, such as Fig. 3 institute
Show, is respectively 10 corresponding to reflection film parameters for the EML of whole gratings-2、10-3、10-4For, quality factor it is corresponding with
The variation of linear gain coefficient is the process of a monotonic increase.
In step 202, the Electroabsorption Modulated Laser A-100, A-1000 of difference part of detecting grating；B-100, B-
1000；C-100, C-1000；D-100, D-1000；The quality factor of E-100, E-1000 under different linear gain coefficients.
Such as: quality factor of the Electroabsorption Modulated Laser A-100 and A-1000 of part grating under 1/100 rank point
Q is not marked as it(A)(Rf=10-2) and Q(A)(Rf=10-3)。
In step 203, according to formulaEach electro-absorption modulation is obtained to swash
The deviation factors Δ Q of light device(i)With linear gain index variation rule, wherein i ∈ [O, A, B, C, D, E], Q(i)(Rf=10-3)
For the quality factor expression formula when the reflectivity Rf of reflectance coating is 1/1000 rank of Electroabsorption Modulated Laser i.
In step 204, it obtains in linear gain value being 6 × 10 by test-20m2When, the corresponding part grating
There is the first result of the wave crest of change curve in the respective deviation factors of Electroabsorption Modulated Laser B, C and D.
In embodiments of the present invention, why look for the reflecting surface that reflectivity is 1/100 rank as generation deviation factors
Molecule is because the adjustment of each performance parameter is relative to the reflecting surface for being 1/100 as EML using reflectivity in comparison
The influence for being formed by EML laser is smaller, with Q(i)(Rf=10-2) higher as that can have referring to obtained deviation factors
Reliability and can be according to property.
In step 205, the electric absorption of the Electroabsorption Modulated Laser C and whole gratings of part grating are obtained by testing
The respective deviation factors of laser O are modulated, are 6 × 10 in linear gain value-20m2When left and right, occur between the two change curve
Maximum different value the second result.
In step 206, it is determined according to first result and the second result, the electro-absorption modulation laser of grating in part
The a length of 400um of the chamber of laser in device, a length of 210um of the chamber of the modulator, the length of grating region is 180um, linear to increase
Beneficial coefficient is 6 × 10-20m2When, the quality factor q when the reflectivity Rf of corresponding reflectance coating is 1/1000 rank(C)(Rf=10-3), it is equal to a length of 400um of chamber of laser in the Electroabsorption Modulated Laser O of whole gratings, the chamber of the modulator is a length of
210um, linear gain coefficient are 6 × 10-20m2When, corresponding reflectance coating reflectivity Rf be 1/10000 rank when quality because
Sub- Q(O)(Rf=10-4).That is quality factor q(C)(Rf=10-3) and quality factor q(O)(Rf=10-4) approximately equal.
EML chip performance quality determines, can be seen that wherein signal noise ratio (SNR) and quality by transmitting eye figure
The factor is key index.In embodiments of the present invention mainly using quality factor as research object.The expression of quality factor is public
Formula is speciallyWherein A is the difference of eye map sheet degree, and σ 1, σ 0 are the standard deviation of level value at " 1 " and " 0 " respectively.
In embodiments of the present invention, pass through the EML of EML (including A, B, C, D and E) and whole gratings to part grating
Test experiments are compared, the performance inflection point of two more crucial part grating lengths have been obtained, as shown in figure 4, wherein light
Grid region length is that the EMLE of the part grating of the EMLA and 250um of the part grating of 125um is shown and whole grating EML mono-
The quality factor of the monotonic increase variation tendency of sample, i.e. A-100 and A-1000 show more with the variation of linear gain coefficient
The quality factor of stable proportionate relationship and E-100 and E-1000 shows relatively stable with the variation of linear gain coefficient
Proportionate relationship (as shown in two slope variation more uniform curves in Fig. 4).And for B-100 and B-1000, C-100 and C-
For 1000 and D-100 and D-1000, three is 6 × 10 in linear gain-20m2With 8 × 10-20m2On show maximum
Value, also, C and D is being 6 × 10 by linear gain-20m2Downward trend is just showed later, and B is being by linear gain
8×10-20m2Just show downward trend later, therefore, in the case that assuming that part grating EML reflecting surface be 1/100 with
Quality factor as shown in Figure 3 difference of the EML of existing whole grating when reflecting surface is 1/100 is little, then can determine that C-
1000 and D-1000 is 6 × 10 in linear gain-20m2Position quality factor it is opposite with respective C-100 and D-100, in phase
Under collinearity gain condition, the maximum difference with quality factor.O-1000 is compared linear by C-1000 shown in fig. 5
Gain is similarly 6 × 10-20m2In the case of, there are maximum deviation factors differences, therefore, can further be supported on C-1000
Position possesses optimal quality factor distance for O-1000.By the way that in Fig. 5, the difference that the longitudinal axis is shown reaches 6
×10-20m2Left and right, passes through formula WithIt can be according to the equation after variation Q is calculated(C)(Rf=10-3) be approximately equal to
Q(O)(Rf=10-3) 100.3Times, that is, it is approximately equal to 2 times of size relation；Wherein, Q(O)(Rf=10-2) and Q(C)(Rf=10-2) close
Patibhaga-nimitta is same, and when processing is directly about fallen.The promotion that the quality factor studied as shown in figure 1 in prior art theory can be reached is closed
System, can be from Fig. 1 when linear gain coefficient is 6, and the EMLC of part grating can reach the quality factor of 2*17=34
Effect, slightly above Q shown in Fig. 1(O)(Rf=10-4) quality factor can achieve the effect that.It is provided with industrial realizability, no
It reduced by only under the premise of reaching specified quality factor, for the reflectivity design requirement of light-emitting surface reflectance coating, moreover, improving 1/
The use scope of 1000 reflective materials.
Embodiment 2:
The embodiment of the present invention is given on the basis of test result and the mentality of designing of embodiment 1, it is also proposed that a kind of part light
The Electroabsorption Modulated Laser of the Electroabsorption Modulated Laser of grid, part grating is made of laser region and modulator region,
Wherein, laser region includes unglazed gate region and the region for being provided with Bragg grating again, described to be provided with Bragg grating
Region coupled with the modulator region, as shown in fig. 6, specifically:
The long L of the chamber of the laserDFBFor 350um-450um, the long L of the chamber of the modulatorEAMFor 180-270um, wherein
The length Lg of grating region is 150-200um in laser；
The linear gain coefficient of the Electroabsorption Modulated Laser of the part grating is controlled in 5-7 × 10-20m2Between；
The reflectivity of the reflectance coating of modulator region light-emitting surface is arranged in the Electroabsorption Modulated Laser of the part grating
For 1/1000 rank.
The embodiment of the present invention is divided gate region by preparing department, gives the reflectance coating that reflectivity is 1/1000 rank, realizes
Reflectance coating that reflectivity is 1/10000 rank just obtainable quality factor q is needed in the EML of whole gratings in the prior art
Effect.The manufacture difficulty of processing for not only reducing EML also reduces the production cost for reaching and formulating quality factor q, is conducive to
Extend the EML application field that the reflectance coating that reflectivity is 1/1000 rank makes.
In embodiments of the present invention, the active area width is 1.5-2.0um, active area thickness 25-35nm.Accordingly
The EML production parameter of part grating, can with content described in table in reference implementation example 1, such as: the gain compression factor is
2.5*10-23m3, EA peak absorption is 1.32 × 106, details are not described herein.
Embodiment 3:
The structure of Electroabsorption Modulated Laser C of the embodiment of the present invention based on the part grating in embodiment 1 for testing,
Propose a kind of Electroabsorption Modulated Laser of part grating, the Electroabsorption Modulated Laser of part grating by laser region and
Modulator region is constituted, wherein laser region includes unglazed gate region and the region for being provided with Bragg grating again, described to set
The region for being equipped with Bragg grating is coupled with the modulator region, refering to what is shown in Fig. 6, specifically:
The long L of the chamber of the laserDFBFor 400um, the long L of the chamber of the modulatorEAMFor 210um, no-raster zone length L
For 220um, the length Lg of grating region is 180um；
The linear gain coefficient of the Electroabsorption Modulated Laser of the part grating is controlled 6 × 10-20m2；
The reflectivity of the reflectance coating of modulator region light-emitting surface is arranged in the Electroabsorption Modulated Laser of the part grating
For 1/1000 rank.
In embodiments of the present invention, there are a kind of optional implementations, wherein the active area width is 1.5-
2.0um, active area thickness 25-35nm.
In embodiments of the present invention, there are a kind of optional implementations, wherein the gain compression factor is 2.5*
10-23m3, EA peak absorption is 1.32 × 106。
The embodiment that compares 2, the embodiment of the present invention can obtain the part grating that optimal test result is obtained in embodiment 1
Each beneficial effect content of EMLC.The embodiment of the present invention is divided gate region by preparing department, and giving reflectivity is 1/1000 rank
Reflectance coating, realize that reflectivity is needed in the EML of whole gratings in the prior art is that the reflectance coating of 1/10000 rank can just obtain
The effect of the quality factor q obtained.The manufacture difficulty of processing for not only reducing EML also reduces the life for reaching and formulating quality factor q
Cost is produced, is conducive to extend the EML application field that the reflectance coating that reflectivity is 1/1000 rank makes.
The foregoing is merely illustrative of the preferred embodiments of the present invention, is not intended to limit the invention, all in essence of the invention
Made any modifications, equivalent replacements, and improvements etc., should all be included in the protection scope of the present invention within mind and principle.
Claims (4)
1. a kind of Electroabsorption Modulated Laser of part grating, which is characterized in that the Electroabsorption Modulated Laser of part grating by
Laser region and modulator region are constituted, wherein laser region includes unglazed gate region and is provided with Bragg grating again
Region, the region for being provided with Bragg grating couples with the modulator region, specific:
The a length of 400um of the chamber of the laser, a length of 210um of the chamber of the modulator；Wherein, in laser grating region length
Degree is 180um；
The linear gain coefficient of the Electroabsorption Modulated Laser of the part grating is controlled 6 × 10-20m2Between；
The reflectivity that the reflectance coating of modulator region light-emitting surface is arranged in the Electroabsorption Modulated Laser of the part grating is 1/
1000 ranks.
2. the Electroabsorption Modulated Laser of part grating according to claim 1, which is characterized in that active area width is
1.5-2.0um, active area thickness 25-35nm.
3. the Electroabsorption Modulated Laser of part grating according to claim 1 or 2, which is characterized in that gain compression because
Son is 2.5*10-23m3, EA peak absorption is 1.32 × 106。
4. a kind of Electroabsorption Modulated Laser design method of part grating, which is characterized in that prepare the electricity of whole gratings respectively
The Electroabsorption Modulated Laser of the part grating of Absorption modulation laser O and corresponding claims 1-3, wherein whole gratings
Electroabsorption Modulated Laser O parameter includes a length of 400um of chamber of laser, a length of 210um of the chamber of the modulator, grating region
Length be 400um；Wherein, the Electroabsorption Modulated Laser of part grating includes A, B, C, D and E five, the electricity of part grating
Identical parameter includes a length of 400um of chamber of laser in Absorption modulation laser A, B, C, D and E, and the chamber of the modulator is long
For 210um, discrepancy is that the length of the grating region of the Electroabsorption Modulated Laser A of part grating is 125um, part light
The length of the grating region of the Electroabsorption Modulated Laser B of grid is 150um, the light of the Electroabsorption Modulated Laser C of part grating
The length of gate region is 180um, and the length of the grating region of the Electroabsorption Modulated Laser D of part grating is 200um, part light
The length of the grating region of the Electroabsorption Modulated Laser E of grid is 250um；Also, respectively correspond the part grating under each parameter
Electroabsorption Modulated Laser, design reflectivity is the light-emitting surface reflectance coating of 1/100 rank and 1/1000 rank, and corresponding mark
For A-100, A-1000；B-100, B-1000；C-100, C-1000；D-100, D-1000；E-100, E-1000, wherein O-
100, O-1000, O-10000 are that the Electroabsorption Modulated Laser O of whole gratings is respectively 1/ in the reflectivity of smooth surface reflectance coating
The mark of 100 ranks, 1/1000 rank and 1/10000 rank, the design method include:
Determine the Electroabsorption Modulated Laser O-100 of whole grating, O-1000, the respective quality factor q of O-10000 three
Variation corresponding relationship relative to linear gain coefficient；
The Electroabsorption Modulated Laser A-100, A-1000 of part of detecting grating respectively；B-100, B-1000；C-100, C-1000；
D-100, D-1000；The quality factor of E-100, E-1000 under different linear gain coefficients；
According to formulaObtain the deviation factors Δ of each Electroabsorption Modulated Laser
Q(i)With linear gain index variation rule；Wherein, i ∈ [O, A, B, C, D, E], Q(i)(Rf=10-3) it is electro-absorption modulation laser
Quality factor expression formula when the reflectivity Rf in reflectance coating of device i is 1/1000 rank；Q(i)(Rf=10-2) it is electric absorption tune
Quality factor expression formula when the reflectivity Rf in reflectance coating of laser i processed is 1/100 rank；
It obtains in linear gain value being 6 × 10 by test-20m2When, the Electroabsorption Modulated Laser B of the corresponding part grating,
There is the first result of the wave crest of change curve in the respective deviation factors of C and D；And the Electroabsorption Modulated Laser of part grating
The respective deviation factors of Electroabsorption Modulated Laser O of C and whole gratings are 6 × 10 in linear gain value-20m2When, occur two
Second result of the maximum different value between person's change curve；
Determine that the chamber of laser is long in the Electroabsorption Modulated Laser of part grating according to first result and the second result
For 400um, a length of 210um of the chamber of the modulator, the length of grating region is 180um, and linear gain coefficient is 6 × 10-20m2
When, the quality factor q when the reflectivity Rf of corresponding reflectance coating is 1/1000 rank(C)(Rf=10-3), it is equal to whole gratings
Electroabsorption Modulated Laser O in laser a length of 400um of chamber, a length of 210um of the chamber of the modulator, linear gain coefficient
It is 6 × 10-20m2When, the quality factor q when the reflectivity Rf of corresponding reflectance coating is 1/10000 rank(O)(Rf=10-4)；Its
In, Q(O)(Rf=10-4) it be the reflectivity Rf in reflectance coating of Electroabsorption Modulated Laser O of whole gratings is 1/10000 rank
When quality factor expression formula.
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| JP2004273993A (en) * | 2003-03-12 | 2004-09-30 | Hitachi Ltd | Wavelength variable distribution reflecting type semiconductor laser device |
| KR100575964B1 (en) * | 2003-12-16 | 2006-05-02 | 삼성전자주식회사 | Electro-absorptive optical modulator module with monolithic integrated photo detector |
| JP5721246B1 (en) * | 2014-08-08 | 2015-05-20 | 国立大学法人東京工業大学 | Surface emitting laser with light modulation function |
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| CN1452284A (en) * | 2003-05-01 | 2003-10-29 | 清华大学 | Distributed feedback semiconductor laser and electric absorption modulator integrated light source and mfg. method |
| CN105322437A (en) * | 2014-08-05 | 2016-02-10 | 华中科技大学 | Distributed feedback semiconductor laser |
| CN104377544A (en) * | 2014-11-28 | 2015-02-25 | 中国科学院半导体研究所 | Monolithic integrated laser chip based on amplification feedback to realize straight-strip bandwidth expansion |
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