CN107464879A - The organic semiconducting materials composition of inkjet printable - Google Patents
The organic semiconducting materials composition of inkjet printable Download PDFInfo
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- CN107464879A CN107464879A CN201710680240.4A CN201710680240A CN107464879A CN 107464879 A CN107464879 A CN 107464879A CN 201710680240 A CN201710680240 A CN 201710680240A CN 107464879 A CN107464879 A CN 107464879A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 46
- 239000000203 mixture Substances 0.000 title claims abstract description 29
- 230000005669 field effect Effects 0.000 claims abstract description 16
- 239000000654 additive Substances 0.000 claims abstract description 11
- 230000000996 additive effect Effects 0.000 claims abstract description 11
- 239000003960 organic solvent Substances 0.000 claims abstract description 8
- CSQAOYKOFQMUMV-UHFFFAOYSA-N 2-pentacen-1-ylethynyl-tri(propan-2-yl)silane Chemical class C1=CC=C2C=C(C=C3C(C=C4C=CC=C(C4=C3)C#C[Si](C(C)C)(C(C)C)C(C)C)=C3)C3=CC2=C1 CSQAOYKOFQMUMV-UHFFFAOYSA-N 0.000 claims abstract 2
- 238000000034 method Methods 0.000 claims description 24
- 229920000642 polymer Polymers 0.000 claims description 23
- 238000007641 inkjet printing Methods 0.000 claims description 14
- 239000004793 Polystyrene Substances 0.000 claims description 6
- 239000002322 conducting polymer Substances 0.000 claims description 5
- 229920001940 conductive polymer Polymers 0.000 claims description 5
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims description 5
- 239000004926 polymethyl methacrylate Substances 0.000 claims description 5
- GWHJZXXIDMPWGX-UHFFFAOYSA-N 1,2,4-trimethylbenzene Chemical compound CC1=CC=C(C)C(C)=C1 GWHJZXXIDMPWGX-UHFFFAOYSA-N 0.000 claims description 4
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical group CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 claims description 4
- URLKBWYHVLBVBO-UHFFFAOYSA-N Para-Xylene Chemical group CC1=CC=C(C)C=C1 URLKBWYHVLBVBO-UHFFFAOYSA-N 0.000 claims description 4
- IVSZLXZYQVIEFR-UHFFFAOYSA-N m-xylene Chemical group CC1=CC=CC(C)=C1 IVSZLXZYQVIEFR-UHFFFAOYSA-N 0.000 claims description 4
- 238000012805 post-processing Methods 0.000 claims description 4
- YTPLMLYBLZKORZ-UHFFFAOYSA-N Thiophene Chemical group C=1C=CSC=1 YTPLMLYBLZKORZ-UHFFFAOYSA-N 0.000 claims description 3
- NNBZCPXTIHJBJL-UHFFFAOYSA-N decalin Chemical compound C1CCCC2CCCCC21 NNBZCPXTIHJBJL-UHFFFAOYSA-N 0.000 claims description 3
- 238000002156 mixing Methods 0.000 claims description 3
- 229920002223 polystyrene Polymers 0.000 claims description 3
- 229920005553 polystyrene-acrylate Polymers 0.000 claims description 3
- FYNROBRQIVCIQF-UHFFFAOYSA-N pyrrolo[3,2-b]pyrrole-5,6-dione Chemical compound C1=CN=C2C(=O)C(=O)N=C21 FYNROBRQIVCIQF-UHFFFAOYSA-N 0.000 claims description 3
- GSNCQSIZHAMPRE-UHFFFAOYSA-N 1-(2-oxo-3H-indol-1-yl)-3H-indol-2-one Chemical group O=C1CC2=CC=CC=C2N1N1C2=CC=CC=C2CC1=O GSNCQSIZHAMPRE-UHFFFAOYSA-N 0.000 claims description 2
- 150000001412 amines Chemical class 0.000 claims description 2
- WINTXHPCODMMRI-UHFFFAOYSA-N benzene naphthalene Chemical compound C1=CC=CC=C1.C1=CC=CC=C1.C1=CC=CC2=CC=CC=C21 WINTXHPCODMMRI-UHFFFAOYSA-N 0.000 claims description 2
- 229920001577 copolymer Polymers 0.000 claims description 2
- 229910000071 diazene Inorganic materials 0.000 claims description 2
- OBISXEJSEGNNKL-UHFFFAOYSA-N dinitrogen-n-sulfide Chemical group [N-]=[N+]=S OBISXEJSEGNNKL-UHFFFAOYSA-N 0.000 claims description 2
- 229920000301 poly(3-hexylthiophene-2,5-diyl) polymer Polymers 0.000 claims description 2
- 229930192474 thiophene Natural products 0.000 claims description 2
- FYGHSUNMUKGBRK-UHFFFAOYSA-N 1,2,3-trimethylbenzene Chemical compound CC1=CC=CC(C)=C1C FYGHSUNMUKGBRK-UHFFFAOYSA-N 0.000 claims 2
- AUHZEENZYGFFBQ-UHFFFAOYSA-N 1,3,5-trimethylbenzene Chemical compound CC1=CC(C)=CC(C)=C1 AUHZEENZYGFFBQ-UHFFFAOYSA-N 0.000 claims 2
- JLBJTVDPSNHSKJ-UHFFFAOYSA-N 4-Methylstyrene Chemical compound CC1=CC=C(C=C)C=C1 JLBJTVDPSNHSKJ-UHFFFAOYSA-N 0.000 claims 1
- 206010011224 Cough Diseases 0.000 claims 1
- 150000001875 compounds Chemical class 0.000 claims 1
- 125000005594 diketone group Chemical group 0.000 claims 1
- RQGPLDBZHMVWCH-UHFFFAOYSA-N pyrrolo[3,2-b]pyrrole Chemical class C1=NC2=CC=NC2=C1 RQGPLDBZHMVWCH-UHFFFAOYSA-N 0.000 claims 1
- 238000002360 preparation method Methods 0.000 abstract description 9
- 239000002904 solvent Substances 0.000 abstract description 8
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 abstract description 3
- 229910052801 chlorine Inorganic materials 0.000 abstract description 3
- 239000000460 chlorine Substances 0.000 abstract description 3
- 239000013078 crystal Substances 0.000 abstract description 3
- 230000007269 microbial metabolism Effects 0.000 abstract 1
- FMZQNTNMBORAJM-UHFFFAOYSA-N tri(propan-2-yl)-[2-[13-[2-tri(propan-2-yl)silylethynyl]pentacen-6-yl]ethynyl]silane Chemical compound C1=CC=C2C=C3C(C#C[Si](C(C)C)(C(C)C)C(C)C)=C(C=C4C(C=CC=C4)=C4)C4=C(C#C[Si](C(C)C)(C(C)C)C(C)C)C3=CC2=C1 FMZQNTNMBORAJM-UHFFFAOYSA-N 0.000 abstract 1
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 9
- 230000000052 comparative effect Effects 0.000 description 8
- 230000004888 barrier function Effects 0.000 description 7
- 239000000758 substrate Substances 0.000 description 7
- RDOXTESZEPMUJZ-UHFFFAOYSA-N anisole Chemical class COC1=CC=CC=C1 RDOXTESZEPMUJZ-UHFFFAOYSA-N 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 238000007639 printing Methods 0.000 description 6
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Natural products CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- -1 pentacene class compounds Chemical class 0.000 description 3
- 238000004528 spin coating Methods 0.000 description 3
- 239000004642 Polyimide Substances 0.000 description 2
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 238000001914 filtration Methods 0.000 description 2
- UZKWTJUDCOPSNM-UHFFFAOYSA-N methoxybenzene Substances CCCCOC=C UZKWTJUDCOPSNM-UHFFFAOYSA-N 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 238000006116 polymerization reaction Methods 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 125000003944 tolyl group Chemical group 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- VVQNEPGJFQJSBK-UHFFFAOYSA-N Methyl methacrylate Chemical compound COC(=O)C(C)=C VVQNEPGJFQJSBK-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 125000000118 dimethyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 238000001548 drop coating Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000009501 film coating Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 125000001827 mesitylenyl group Chemical class [H]C1=C(C(*)=C(C([H])=C1C([H])([H])[H])C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- 125000005487 naphthalate group Chemical group 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000012216 screening Methods 0.000 description 1
- 229920005573 silicon-containing polymer Polymers 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- VJYJJHQEVLEOFL-UHFFFAOYSA-N thieno[3,2-b]thiophene Chemical group S1C=CC2=C1C=CS2 VJYJJHQEVLEOFL-UHFFFAOYSA-N 0.000 description 1
- 230000001988 toxicity Effects 0.000 description 1
- 231100000419 toxicity Toxicity 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000012795 verification Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
- H10K71/13—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing
- H10K71/135—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing using ink-jet printing
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/40—Organosilicon compounds, e.g. TIPS pentacene
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
Abstract
The present invention relates to semiconductor layer of a kind of organic semiconducting materials composition and organic field effect tube and preparation method thereof, the organic semiconducting materials composition contains 6,13 pairs of (triisopropylsilyl acetenyl) pentacenes (6,13 Bis (triisopropylsilylethynyl) pentacene, lower abbreviation TIPS Pantacene), polymeric additive and organic solvent；And said composition property stable in the air is high, the crystal property of the semiconductor layer of preparation is good, it is possible to increase the performance of transistor, realizes that organic field effect tube works under low-voltage (being less than or equal to 10V).Particularly, the semiconductor composition being related in the disclosure employs conventional in the non-chlorine solvent to environment and the mankind's all less pollutions, rather than current organic semiconductor field be not easy by the chlorinated solvents of microbial metabolism in environment.
Description
Technical field
This disclosure relates to organic electronic device, in particular it relates to a kind of organic semiconducting materials composition and organic field effect
Answer its preparation method of transistor.
Background technology
Before organic field effect tube (Organic Thin Film Transistor, OTFT) is due to being widely used
Scape, cost is low, and it is convenient to prepare, and causes the common interest of people, and OTFT is by electrode (source electrode, drain electrode, grid), insulating barrier and organic
Semiconductor group is into OTFT electrode part is prepared by vacuum deposition method more at present, and insulating barrier is prepared by spin coating method more, partly
Conductor is then prepared by drop film or spin coating proceeding more.
Inkjet printing, which has, directly to be patterned, non-contact with substrate, material (Drop on Demand) is saved, with flexible base
Bottom has extraordinary compatibility, it is easy to accomplish the advantages that large area is processed.Realize the large area system of organic field effect tube
One of standby important channel is that (i.e. electrode, the preparation of three parts of insulating barrier and semiconductor layer depend on printing to full printing OFET
Technique complete).Ink jettable electrode (conduction) material and insulating layer material all have been realized in commercialization at present, but can spray
The semi-conducting material of ink is also rarely reported.
Existing molten liquefied organic semiconducting materials are a lot, and wherein pentacene class compounds property is more excellent.
WO2009155106A discloses a kind of methyl-monosilane acetenyl pentacene compound, available for the semiconductor in organic transistor
Once prepared.And it is publicly available in inkjet printing, what this kind of chemical combination of silk-screen printing collectively constituted with polymer and solvent
Liquid composite.
But pass through test, there are the following problems for prior art：
Most of existing ink jettable semi-conducting material is using the chlorinated solvents such as chlorine all relatively harmful to human body and environment
Benzene or o-dichlorohenzene (Japanese Journal of Applied Physics 2011,50,03CB05, DOI:
10.1143/JJAP.50.03CB05；Nanotechnology 2007,18,345202,8pp,DOI:10.1088/0957-
4484/18/34/345202) the ink jettable ink ductor of document report is although widely used and at present, but viscosity
Can be bad, under dedicated for the scene of ink-jet, it is impossible to reach preferable ink-jet effect, cause to prepare the success rate of device compared with
It is low.
The content of the invention
In order to solve prior art problem, by repeated screening and experiment, the present invention provides a kind of organic semiconductor combination
Thing, said composition can be used for the semiconductor layer that organic field effect tube is prepared by ink-jet printing process；Its solvent toxicity is small,
And viscosity index is good, it can efficiently be used for inkjet printing.
On the other hand, there is provided the method and use this method of a kind of semiconductor layer for preparing organic field effect tube are made
The semiconductor layer of the organic field effect tube of work；Semiconductor layer prepared by a kind of semi-conducting material containing the present invention is also provided
Organic field effect tube.
The concrete technical scheme of the present invention is a kind of composition for ink, and said composition contains TIPS-Pantacene, polymerization
Thing additive and organic solvent；Relative to the 1mL organic solvent, the content of the TIPS-Pantacene is 1-40mg,
The content of the polymeric additive is 1-40mg；The polymeric additive is insulating polymer and/or semi-conducting polymer；
The TIPS-Pantacene has the structure as shown in formula (1)：
Alternatively, the weight average molecular weight of the polymeric additive is 10,000-8,000,000.
Alternatively, the insulating polymer is in polystyrene, polymethylstyrene, polymethyl methacrylate
It is at least one；The semi-conducting polymer is p-type semiconductor polymer or n-type semiconductor polymer, and the p-type semiconductor polymerize
Thing is selected from poly- 3- hexyl thiophenes, contains alkyl-substituted pyrrolo-pyrrole-dione (diketopyrrolopyrrole, DPP)
Polymer, the polymer containing diazosulfide unit, the polymer containing 1,4-Dithiapentalene unit, it is poly- (4,4- diphenyl-
At least one of (4- methoxyl group -2- methylphenyls) amine) and polymer containing bioxindol unit, the polymerization of described n-type
Thing is the copolymer of benzene-naphthalene diimide and di- thiophene.
Alternatively, the polymeric additive is insulating polymer, and the insulating polymer is polystyrene and poly- methyl
Methyl acrylate, the weight ratio of the polystyrene and polymethyl methacrylate is 1：(0-5)
Alternatively, the organic solvent is selected from toluene, meta-xylene, paraxylene, ortho-xylene, 1,2,3- front three
Benzene, 1,2,4- trimethylbenzene and 1,3,5- trimethylbenzenes, at least one of naphthane and methyl phenyl ethers anisole.
Alternatively, the organic solvent is selected from toluene, at least one of naphthane and methyl phenyl ethers anisole.
Alternatively, the viscosity of 20 DEG C of said composition is 0.6-6mPas.
A kind of disclosure second aspect, there is provided method for the semiconductor layer for preparing organic field effect tube；This method bag
The organic semiconducting materials composition that disclosure first aspect is provided is included through inkjet printing and post processing, is obtained described organic
The semiconductor layer of field-effect transistor.
Alternatively, the temperature of the post processing is 120-160 DEG C.
Alternatively, this method also includes：Before the inkjet printing steps, make what disclosure first aspect provided to have
It is stirred successively after the mixing of machine semiconductor material combinations thing, ultrasonic and filtering.
The disclosure third aspect, there is provided the organic effect made by a kind of method that disclosure second aspect is provided is brilliant
The semiconductor layer of body pipe.
Disclosure fourth aspect, there is provided a kind of organic field effect tube, including substrate, insulating barrier and electrode, it is described to have
Field effect transistors also include the semiconductor layer that the disclosure third aspect is provided.
Alternatively, the substrate is flexible substrates, and the flexible substrates are selected from PEN, gathered to benzene
At least one of naphthalate, polyimides and dimethyl silicone polymer.
Alternatively the insulating barrier and electrode are prepared by solwution method；The solwution method is selected from drop coating, inkjet printing, silk screen
At least one of printing, spin coating and blade coating.
Alternatively, the insulating barrier and electrode are prepared by ink-jet printing process.
The disclosure is by allocating the composition of organic semiconducting materials composition, there is provided for preparing organic effect crystal
The organic semiconducting materials composition of pipe semiconductor layer, said composition have suitable viscosity and surface tension, can use spray
The method of ink printing prepares semiconductor layer, can realize that whole soln method, even full impact system prepare p-type organic effect crystalline substance
Body pipe, the disclosure use all to endanger less non-chlorine solvent to environment and operating personnel, use the disclosure provide ink
Formula can prepare OTFT with large area；Said composition property stable in the air is high, and semiconductor prepared therefrom
Layer has preferable crystal property, it is possible to increase the performance of transistor device；Meanwhile the last handling process of inkjet printing is easy,
The application of semiconductor layer on a flexible substrate can be realized.
Brief description of the drawings
Fig. 1 is OTFT structure charts prepared by the present invention；
Fig. 2 is the OTFT transfer curve figures that this is prepared clearly.
Embodiment
Below, technical scheme will be described in detail in conjunction with specific embodiments, it is necessary to explanation, specific implementation
Example is only several specific embodiments of the present invention, is not intended as the restriction for technical solution of the present invention.
Composition for ink preparation example
In flask, 1L naphthanes (purchase manufacturer is taken：Sigma-Aldrich；The trade mark：522651) it is, double with 5g 6,13-
(triisopropylsilyl acetenyl) pentacene (purchase manufacturer：Sigma-Aldrich；Article No.：716006), and 2.5g gathers
Styrene (purchase manufacturer：Sigma-Aldrich；The trade mark：81413；Weight average molecular weight 300,000) mixing, 0.1-2 is stirred by ultrasonic
Hour, the ultrasonic time is 1-10 minutes, supersonic frequency 20-40kHz；It is filtrated to get ink product, the precision of filtering
For 0.1-0.5 microns.
Through measurement, the viscosity of ink is：3.346mPas, the surface tension of ink are：26.9mN/m.
OTFT preparation examples
First on polyimide substrate grid is printed successively with ink jet printing device (Dimatix-2831), insulating barrier,
Source electrode and drain electrode, prepare OTFT polycrystalline substances.
Ink prepared by preparation example is fitted into the print cartridge of ink jet printing device and carries out inkjet printing：Shower nozzle voltage is 23V,
Nozzle temperature is 35 DEG C, puts 15 microns of spacing, the printing-filming on polycrystalline substance；The semiconductor film of printing is put on warm table
With 120 DEG C of heating 20min, OTFT as shown in Figure 1 is obtained.
The transfer curve for preparing the OTFT devices completed is as shown in Figure 2.
For verification the verifying results, by it is a large amount of repeat to prepare experiments be prepared for 77 devices wherein, have during the device for having 93.5%
Performance, the mobility such as following table of the device of statistics is shown.
Comparative example
According to the method for preparation example, adjust constituent content therein and be prepared for one group of comparative example, its composition is as shown in the table：
Its physical parameter and inkjet performance are as shown in the table：
| Comparative example | Viscosity (mPas) | Surface tension (mN/m) | Inkjet performance |
| Comparative example 1 | 2.359 | 25.4 | Ink-jet can be stablized |
| Comparative example 2 | 1.731 | 26.5 | Ink-jet effect is poor |
| Comparative example 3 | 0.635 | 27.7 | Cannot |
| Comparative example 4 | 0.928 | 28.1 | Ink-jet effect is poor |
Understood with reference to preparation example of the present invention and above-mentioned comparative example, present invention employs the relatively large solvent of viscosity, in ink-jet
Worked well in printing, and some existing solvents, hence it is evident that the demand of inkjet printing is not suitable for, in addition in the present composition
The viscosity that polymer significantly increases ink is with the addition of, improves the stability of ink-jet, polymer is mixed into addition and improves and partly lead
The crystallinity of body thin film, the density for the defects of reducing OTFT semiconductor/interfacial dielectric layer.
Claims (9)
1. a kind of organic semiconducting materials composition, said composition contains the TIPS- with the structure as shown in formula (1)
Pantacene, polymeric additive and organic solvent, it is characterised in that relative to the 1mL organic solvent, described 6,13-
The content of double (triisopropylsilyl acetenyl) pentacenes is 1-40mg, and the content of the polymeric additive is 1-
40mg；Characterized in that, the polymeric additive is insulating polymer and/or semi-conducting polymer；The organic solvent is
Selected from meta-xylene, paraxylene, ortho-xylene, 1,2,3- trimethylbenzene, 1,2,4- trimethylbenzene, 1,3,5- trimethylbenzene and naphthane
In it is one or more of
2. composition according to claim 1, it is characterised in that the weight average molecular weight of the polymeric additive is 10,
000-8,000,000。
3. composition according to claim 1 or 2, it is characterised in that the insulating polymer is selected from polystyrene, gathered
At least one of methyl styrene, polymethyl methacrylate；The semi-conducting polymer is p-type semiconductor polymer or n
Type semi-conducting polymer, the p-type semiconductor polymer are selected from poly- 3- hexyl thiophenes, contain alkyl-substituted pyrrolo- pyrrole
Cough up diketone (diketopyrrolopyrrole, DPP) polymer, the polymer containing diazosulfide unit, containing and two
It is the polymer of thiophene unit, poly- (4,4- diphenyl-(4- methoxyl group -2- methylphenyls) amine) and poly- containing bioxindol unit
At least one of compound, described n-type polymer are the copolymer of benzene-naphthalene diimide and di- thiophene.
4. composition according to claim 1, it is characterised in that the polymeric additive is insulating polymer, described
Insulating polymer is polystyrene and polymethyl methacrylate, the weight ratio of the polystyrene and polymethyl methacrylate
For 1：(0-5).
5. composition according to claim 1, it is characterised in that the range of viscosities that 20 DEG C of said composition be selected from 0.6-
6mPa·s。
A kind of 6. method for the semiconductor layer for preparing organic field effect tube, it is characterised in that this method includes making right will
The method and post processing that the organic semiconducting materials composition in 1-5 described in any one is prepared through solution are sought, obtains described having
The semiconductor layer of field effect transistors.
7. according to the method for claim 6, it is characterised in that the temperature of the post processing is 100-170 DEG C.
8. according to the method for claim 7, it is characterised in that this method also includes：Before the inkjet printing steps,
The organic semiconducting materials composition in claim 1-5 described in any one is set to be stirred successively after mixing, ultrasonic and mistake
Filter.
9. the semiconductor for the organic field effect tube that the method according to any one in claim 6-8 is prepared
Layer.
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| CN201710680240.4A CN107464879A (en) | 2017-10-17 | 2017-10-17 | The organic semiconducting materials composition of inkjet printable |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
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| US20110073813A1 (en) * | 2008-05-30 | 2011-03-31 | Gregg Alexander Caldwell | Silylethynyl Pentacene Compounds and Compositions and Methods of Making and Using the Same |
| CN102623639A (en) * | 2012-04-10 | 2012-08-01 | 合肥工业大学 | Method for manufacturing organic thin film transistor realizing patterning and automatic-modification interface in one step |
| CN107170885A (en) * | 2017-04-19 | 2017-09-15 | 上海幂方电子科技有限公司 | Semiconductor layer of organic semiconducting materials composition and organic field effect tube and preparation method thereof |
-
2017
- 2017-10-17 CN CN201710680240.4A patent/CN107464879A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080009625A1 (en) * | 2003-11-28 | 2008-01-10 | Brown Beverley A | Organic semiconductor layers |
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