CN107464411B - MBUS circuit for centralized meter reading system - Google Patents

MBUS circuit for centralized meter reading system Download PDF

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Publication number
CN107464411B
CN107464411B CN201710875668.4A CN201710875668A CN107464411B CN 107464411 B CN107464411 B CN 107464411B CN 201710875668 A CN201710875668 A CN 201710875668A CN 107464411 B CN107464411 B CN 107464411B
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circuit
mbus
resistor
sub
power supply
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CN107464411A (en
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谢小品
李信波
刘硕
闫增伟
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Henan Zhuozheng Electronic Technology Co ltd
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Henan Zhuozheng Electronic Technology Co ltd
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    • GPHYSICS
    • G08SIGNALLING
    • G08CTRANSMISSION SYSTEMS FOR MEASURED VALUES, CONTROL OR SIMILAR SIGNALS
    • G08C17/00Arrangements for transmitting signals characterised by the use of a wireless electrical link
    • G08C17/02Arrangements for transmitting signals characterised by the use of a wireless electrical link using a radio link
    • GPHYSICS
    • G08SIGNALLING
    • G08CTRANSMISSION SYSTEMS FOR MEASURED VALUES, CONTROL OR SIMILAR SIGNALS
    • G08C19/00Electric signal transmission systems

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  • Engineering & Computer Science (AREA)
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Abstract

An MBUS circuit for centralized meter reading system is composed of data signal transmitting sub-circuit, MBUS data receiving sub-circuit, MBUS load overload detecting sub-circuit, MBUS power supply control sub-circuit and MBUS output sub-circuit, which are connected by wire and installed on circuit board. The invention has the advantages of definite circuit functions, easy realization, fewer components, simple circuits, good stability, high safety and the like, and the invention is easy to popularize and market by adopting the simple data signal transmission word circuit, the MBUS data receiving sub-circuit, the MBUS load overload detection sub-circuit, the MBUS power supply control sub-circuit and the MBUS output sub-circuit, thereby realizing the function of converting the signals of the singlechip processor in the transfer collector from the signals of the MBUS bus. Based on the above, the invention has good application prospect.

Description

MBUS circuit for centralized meter reading system
Technical Field
The invention relates to the field of application of instrument electronic technology, in particular to an MBUS circuit used in a centralized meter reading system.
Background
Along with the increase of national economy, various civil meters are converted into novel modes of electronic metering and automatic meter reading from the original modes of mechanical metering and manual on-site meter reading, and in operation, one person is matched with one computer, so that the values of all meters in one area can be read back in a short time, and a report which is convenient for people to recognize and read is formed, thus saving a great deal of manpower and time; the communication between the transfer collector and the electronic Meter equipment becomes an important component of the whole centralized Meter reading system, so that different expert scholars at home and abroad propose different communication modes, wherein the MBUS BUS communication mode (Meter BUS) is convenient to apply, and in the work, the basis is provided for realizing the magnitude reading of the Meter by the centralized Meter reading system through the conversion between the signal of the singlechip processor of the transfer collector and the signal of the MBUS Meter BUS; however, in the prior art, peripheral elements matched with the MBUS bus circuit are integrated with the MBUS bus during manufacturing, and the peripheral elements and the MBUS bus have the defects of high cost, few functions, unstable work and more components, and are not beneficial to market popularization and application of the electronic meter.
Disclosure of Invention
In order to overcome the defects caused by the fact that peripheral elements matched with an MBUS bus circuit of the traditional electronic meter equipment are integrated with the MBUS bus circuit during manufacturing, the invention provides the MBUS bus matched circuit which is built by adopting a discrete component, has the functions of actively closing and opening an MBUS bus power supply, has the function of detecting the overload of the MBUS bus, and has the function of automatically closing the bus when the MBUS bus is in short circuit, so that equipment on the bus is prevented from being damaged.
The technical scheme adopted for solving the technical problems is as follows:
the MBUS circuit for the centralized meter reading system is characterized by comprising a data signal transmitting sub-circuit, an MBUS data receiving sub-circuit, an MBUS load overload detection sub-circuit, an MBUS power supply control sub-circuit and an MBUS output sub-circuit, wherein the data signal transmitting sub-circuit, the MBUS data receiving sub-circuit, the MBUS load overload detection sub-circuit, the MBUS power supply control sub-circuit and the MBUS output sub-circuit are connected through wires and arranged on a circuit board, the positive power supply input end of the data signal transmitting sub-circuit, the MBUS data receiving sub-circuit, the MBUS load overload detection sub-circuit, the positive power supply input end of the MBUS power supply control sub-circuit and the positive power supply input end of a 3.3V direct current power supply in a transfer collector are connected through wires, the negative power supply input end of the negative power supply of the MBUS data receiving sub-circuit, the negative power supply input end of the MBUS power supply control sub-circuit and the negative power supply of the 3.3V direct current in the transfer collector are grounded through wires, the-18V direct current power supply in the transfer collector is connected with the second negative power supply input end of the MBUS power supply control sub-circuit through a wire, the first signal output end of the data signal transmitting sub-circuit is connected with the first signal input end of the MBUS load overload detection sub-circuit through a wire, the signal output end of the MBUS power supply control sub-circuit is connected with the signal input end of the MBUS output sub-circuit through a wire, the signal output end of the MBUS output sub-circuit is connected with the signal input end of the MBUS data receiving sub-circuit and the second signal input end of the MBUS load overload detection sub-circuit through a wire, the signal output end of the MBUS data receiving sub-circuit is connected with the first signal input end of the single chip processor of the transfer collector through a wire, the signal output end of the MBUS load overload detection sub-circuit is connected with the second signal input end of the single chip processor in the transfer collector through a wire, the two signal output ends of the MBUS output sub-circuit are connected with the two signal input ends of the MBUS bus through wires, the second signal output end of the data signal transmission sub-circuit is connected with the third signal input end of the MBUS bus through wires, and the two signal input ends of the MBUS power supply control sub-circuit are respectively connected with the two control signal output ends of the singlechip processor of the transfer collector through wires.
The data signal transmitting sub-circuit consists of resistors, light emitting diodes and an integrated chip, wherein the resistors, the light emitting diodes and the integrated chip are connected through wires, the integrated chip is a power operational amplifier, the model is TLE2301, three resistors are arranged, one end of each resistor is connected with the positive electrode of each light emitting diode, one end of each resistor is connected with one end of each third resistor, the square reverse input end 4 pin of the power operational amplifier is connected with one end of each third resistor, the other end of each third resistor is connected with the output end 14 pin of the power operational amplifier, and the negative electrode of each light emitting diode is connected with the positive input end 2 pin of the power operational amplifier.
The MBUS data receiving sub-circuit is composed of a resistor, a nonpolar capacitor, a polar capacitor, a light emitting diode, diodes and an integrated chip, wherein the resistor, the nonpolar capacitor, the polar capacitor, the light emitting diode and the diodes are connected through wires, the integrated chip is a dual-voltage comparator integrated circuit, the model is LM393, the number of the resistors is five, the number of the diodes is two, the anode of the first diode is connected with the anode of the second diode, one end of the nonpolar capacitor is connected with one end of the first resistor, the cathode of the second diode is connected with one end of the second resistor, the other end of the first resistor is connected with the 3 pin of the positive input end of the dual-voltage comparator integrated circuit, the other end of the second resistor is connected with the 2 pin of the reverse input end of the dual-voltage comparator integrated circuit, one end of the third resistor and the positive electrode of the polar electrolytic capacitor, one end of the fourth resistor is connected with the anode of the light emitting diode, the cathode of the light emitting diode is connected with the 5 pin of the output end of the dual-voltage comparator integrated circuit, one end of the fifth resistor is connected with the other end of the nonpolar capacitor and the third resistor, and the cathode of the polar capacitor is grounded.
The MBUS load overload detection sub-circuit consists of resistors, polar capacitors and an integrated chip, wherein the two polar capacitors and the integrated chip are connected through wires, the model is LM393, the number of the polar capacitors is four, one end of a first resistor is connected with one end of a second resistor, the anode of the first polar capacitor is connected with the reverse input end 6 of the dual-voltage comparator integrated circuit, one end of a third resistor is connected with the anode of the second polar capacitor, the positive input end 5 of the dual-voltage comparator integrated circuit is connected with one end of a fourth resistor, and the cathodes of the two polar capacitors are grounded.
The MBUS power supply control sub-circuit consists of resistors, field effect transistors and an integrated chip, wherein the resistors are connected through wires, the integrated chip is an operational amplifier, the model is LM324, five resistors and two field effect transistors are arranged, one end of a first resistor is connected with one end of a second resistor, one end of an inverting input end 2 of the operational amplifier is connected with one end of a third resistor, the other end of the third resistor is connected with a drain electrode of the first field effect transistor and a grid electrode of the second field effect transistor, one end of a fourth resistor is connected with one end of a fifth resistor, the other end of the fifth resistor is connected with the grid electrode of the first field effect transistor, the other end of the first resistor is connected with the other end of the fourth resistor, and the other end of the second resistor is connected with a source electrode of the first field effect transistor.
The MBUS output subcircuit consists of a resistor, a transient diode and a wiring terminal, wherein the resistor, the transient diode and the wiring terminal are connected through a wire, one end of the resistor is connected with the cathode of the transient diode and one end of the wiring terminal, and the anode of the transient diode is connected with the other end of the wiring terminal.
The beneficial effects of the invention are as follows: the invention has the advantages of definite circuit functions, easy realization, fewer components, simple circuits, good stability, high safety and the like, and the invention is easy to popularize and market by adopting the simple data signal transmission word circuit, the MBUS data receiving sub-circuit, the MBUS load overload detection sub-circuit, the MBUS power supply control sub-circuit and the MBUS output sub-circuit, thereby realizing the function of converting the signals of the singlechip processor in the transfer collector from the signals of the MBUS bus. Based on the above, the invention has good application prospect.
Drawings
The invention will be further described with reference to the drawings and examples.
FIG. 1 is a circuit diagram of a data signal transmitting sub-circuit of the present invention;
FIG. 2 is a circuit diagram of the MBUS data receiving sub-circuit of the present invention;
FIG. 3 is a circuit diagram of the MBUS load overload detection subcircuit of the present invention;
FIG. 4 is a circuit diagram of the MBUS power control sub-circuit of the present invention;
FIG. 5 is a circuit diagram of the MBUS output sub-circuit of the present invention;
fig. 6 is an overall circuit diagram of the present invention.
Detailed Description
As shown in fig. 1, 2, 3, 4, 5 and 6, the data signal transmitting sub-circuit is composed of resistors R1, R2 and R3, a light emitting diode LED1 and an integrated chip U1, which are connected by wires, the integrated chip U1 is a power operational amplifier, the model is TLE2301, three resistors are provided, one end of the first resistor R1 is connected with the positive electrode of the light emitting diode LED1, one end of the second resistor R2 is connected with one end of a third resistor R3 and the pin 4 of the square inverting input end of the power operational amplifier U1, the other end of the third resistor R3 is connected with the pin 14 of the output end of the power operational amplifier U1, and the negative electrode of the light emitting diode LED1 is connected with the pin 2 of the positive input end of the power operational amplifier U1. The MBUS data receiving sub-circuit consists of resistors R11, R12, R13, R15 and R14, a non-polar capacitor C15, a polar capacitor C3, a light emitting diode LED2, diodes D1 and D2 and an integrated chip U3, wherein the diodes D1 and D2 are connected through wires, the integrated chip U3 is a dual-voltage comparator integrated circuit, the model is LM393, five resistors are arranged, one end of the non-polar capacitor C15 is connected through wires, the positive electrode of the first diode D1 is connected with one end of the first resistor R11, the negative electrode of the second diode D2 is connected with one end of the second resistor R12, the other end of the first resistor R11 is connected with the pin of the positive input end 3 of the dual-voltage comparator integrated circuit U3, the other end of the second resistor R12 is connected with the pin of the reverse input end 2 of the dual-voltage comparator integrated circuit U3, one end of the third resistor R13 is connected with the positive electrode of the polar electrolytic capacitor C3, one end of the fourth resistor R15 is connected with one end of the light emitting diode D2 and one end of the positive electrode of the first resistor R11, the other end of the second resistor D2 is connected with one end of the non-polar capacitor C3, and the other end of the non-polar capacitor C13 is connected with the other end of the positive electrode of the second resistor C3. The MBUS load overload detection sub-circuit consists of resistors R7, R8, R9 and R10, polar capacitors C1 and C2 and an integrated chip U2, wherein the resistors are connected through wires, the integrated chip U2 is a dual-voltage comparator integrated circuit, the model is LM393, the number of the resistors is four, the number of the polar capacitors is two, one end of a first resistor R7 is connected with one end of a second resistor R8, the positive pole of the first polar capacitor C1, the negative pole of the dual-voltage comparator integrated circuit U2 is connected with the positive pole of the second polar capacitor C2, the positive pole of the dual-voltage comparator integrated circuit U2 is connected with the 5 pin of the positive input end of the dual-voltage comparator integrated circuit U2, the output 7 pin of the dual-voltage comparator integrated circuit U2 is connected with one end of a fourth resistor R10, and the negative poles of the two polar capacitors C1 and C2 are grounded. The MBUS power supply control sub-circuit is composed of resistors R16, R17, R18, R5 and R6, field effect transistors T1 and T2 and an integrated chip USA, wherein the resistors are connected through wires, the integrated chip U5A is an operational amplifier, the model is LM324, five resistors and two field effect transistors are arranged, one end of the first resistor R16 is connected with one end of the second resistor R17, one end of the inverting input end 2 of the operational amplifier U5A is connected, one end of the output end 1 of the operational amplifier U5A is connected with one end of the third resistor R18, the other end of the third resistor R18 is connected with one end of the first field effect transistor T1, the drain electrode of the second field effect transistor T2 is connected, one end of the fourth resistor R5 is connected with one end of the fifth resistor R6, the other end of the fifth resistor R6 is connected with the gate electrode of the first field effect transistor T1, the other end of the first resistor R18 is connected with the other end of the fourth resistor R5, and the other end of the second resistor R17 is connected with the source electrode of the first field effect transistor T1. The MBUS output sub-circuit is composed of a resistor R4, a transient diode TVS and a wiring terminal J1, wherein the resistor R4, the transient diode TVS and the wiring terminal J1 are connected through a wire, one end of the resistor R4 is connected with the cathode of the transient diode TVS and one end of the wiring terminal J1, and the anode of the transient diode TVS is connected with the other end of the wiring terminal JI.
As shown in fig. 1, 2, 3, 4, 5 and 6, the other end of the positive power input end resistor R1 of the data signal transmitting sub-circuit, the other end of the positive power input end resistor R15 of the MBUS data receiving sub-circuit, the other end of the positive power input end resistor R10 of the MBUS load overload detecting sub-circuit, the other end of the positive power input end resistor R16 of the MBUS power control sub-circuit and the positive electrode of the 3.3V dc power supply in the relay collector are connected by a wire, the negative power input end polarity capacitor C3 negative electrode of the MBUS data receiving sub-circuit, the negative power input end polarity capacitor C2 negative electrode of the MBUS load overload detecting sub-circuit, the first negative power input end resistor R17 of the MBUS power control sub-circuit and the negative electrode of the 3.3V dc power supply in the relay collector are grounded by a wire, the source of the field effect tube T2 at the second negative power supply input end of the MBUS power supply control sub-circuit is connected with the source of the field effect tube T2 through a wire, the 14 pin of the power operational amplifier U1 at the first signal output end of the data signal transmitting sub-circuit is connected with the other end of the resistor R7 at the first signal input end of the MBUS load overload detection sub-circuit through a wire, the drain of the field effect tube T2 at the signal output end of the MBUS power supply control sub-circuit is connected with the positive electrode of the transient diode TVS at the signal output end of the MBUS output sub-circuit through a wire, the signal output end of the MBUS output sub-circuit is connected with the positive electrode of the diode at the signal input end of the MBUS data receiving sub-circuit, the other end of the resistor R9 at the second signal input end of the MBUS load overload detection sub-circuit is connected with the first signal input end of the singlechip processor of the transfer collector through a wire, the signal output end of the MBUS load overload detection subcircuit is connected with the 7 pin of the double-voltage comparator integrated circuit and the second signal input end of the singlechip processor in the transfer collector through a wire, the two ends of the connecting terminal JI of the two signal output ends of the MBUS output subcircuit are connected with the 1 pin and the 2 pin of the two signal input ends of the MBUS bus through wires, the 2 pin of the power operational amplifier of the data signal transmission subcircuit is connected with the third signal input end of the MBUS bus through a wire, and the 3 pin of the operational amplifier U5A of the two signal input ends of the MBUS power supply control subcircuit, the other end of the resistor R6 and the two control signal output ends of the singlechip processor of the transfer collector are respectively connected through wires.
In the data signal transmission sub-circuit shown in fig. 1, 2, 3, 4, 5 and 6, the resistor R1 and the light emitting diode LED1 are used for indicating the data transmission signal P3, when the data signal P3 is transmitted, the light emitting diode LED1 flashes, the resistors R2 and R3 and the power operational amplifier U1 form the data signal transmission circuit, and the data signal P3 is transmitted to the MBUS bus to form the MBUS bus transmission signal VMV, so that the use of a later circuit is facilitated. In the MBUS bus data receiving sub-circuit, a receiving signal indicating circuit is formed by a resistor R15 and a light emitting diode LED2, the influence of the circuit on the MBUS bus is prevented by diodes D1 and D2 and a nonpolar capacitor C15, a signal detecting and amplifying circuit is formed by combining resistors R11, R12, R13 and R14 and a polar capacitor C3 with a double-voltage comparator integrated circuit U3, a signal P4 is formed by detecting and amplifying a MBUS bus receiving signal, the signal P4 is used by a singlechip processor, and meanwhile, the LED3 performs flicker indication, and finally MBUS bus data receiving is completed. In the MBUS bus load overload detection subcircuit, under normal conditions, the voltage values of VMV and VM+ are very small in phase difference, VP is larger than VN, the signal P2 is high level, when the MBUS bus is overloaded, the voltage difference between VM+ and VMV is large, at the moment, VN is larger than VP, the signal P2 is low level, and the signal P2 can be directly used for overload control of a singlechip and is simultaneously used for a later-stage MBUS bus power supply control circuit. In the MBUS bus power supply control sub-circuit, when data is transmitted, P1 is low level by a singlechip processor or a key, an MBUS bus negative power supply is started, the potential of the drain electrode of a field effect transistor T2 is determined by a signal K1, and as no bus load is overloaded under normal conditions, the signal P2 is high level as known by the MBUS bus load overload detection circuit, a signal K1 is formed after a comparison circuit is formed by resistors R16, R17 and R18 and an operational amplifier U5A, at the moment, the signal K1 is also high level, the field effect transistor T1 is conducted, the opening of the MBUS bus negative power supply is completed, the MBUS bus is started to supply power, the MBUS bus normally operates, when the MBUS bus load is overloaded or the MBUS bus is short-circuited, P2 is low level, the signal K1 is low level, the MBUS bus negative power supply is closed, or the signal K1 is low level under the condition that the signal P1 is high level is processed by the singlechip, the signal K1 is also low level, and thus the MBUS bus is closed, and the MBUS bus is doubly protected when the MBUS bus is in the state P2 is closed. In the MBUS bus output sub-circuit, a transient diode TVS is used for preventing overcurrent at the moment of the power-on of the MBUS bus, a J1 terminal is used for being externally connected with a corresponding MBUS bus, and a resistor R4 is used for adjusting and analyzing the received signals of the MBUS bus. When the invention works, firstly, a data signal P3 output by the singlechip processor is formed into a signal VMV through the data signal transmitting circuit, the signal VMV is transmitted to the MBUS bus for receiving and using by other MBUS buses on the MBUS bus, so that the transmission of MBUS data signals is completed, when the signals transmitted by other meters are arranged on the MBUS bus, the signals are analyzed through the MBUS bus output circuit, and are converted into signals P4 through the MBUS bus data receiving sub-circuit, and are transmitted to the singlechip processor for corresponding processing, so that the data receiving process on the MBUS bus is completed.
Fig. 1, 2, 3, 4, 5, 6, in the data signal transmission sub-circuit: the R1 resistance is 510 omega, the R2 resistance is 10K, and the R3 resistance is 32K. The MBUS bus data receiving sub-circuit: r15 resistance 510 omega, R11 and R12 resistance 5.1K, R13 resistance 2M resistance, R14 resistance 1K3, diode D1 and D2 model 1N4001, polar capacitance specification 22uF/25V, and nonpolar capacitance specification 0.1uF. In the MBUS bus load overload detection subcircuit: r7 resistance 15K, R8 resistance 33K, R9 resistance 22K, R10 resistance 10K, and polar capacitors C1 and C2 are 22uF/25V. The MBUS bus power control sub-circuit: r16, R17, R5 and R6 have resistance values of 10K, R18 has resistance value of 1K, and the field effect transistor T1 is 2SK160, and the T2 is 2SD1048. The resistance value of the resistor R4 in the MBUS bus output subcircuit is 20Ω, and the model of the transient diode TVS is XESD12VT23-3.
It should be noted that the present embodiment is a preferred embodiment of the present invention, and is not intended to limit the present invention, and any modification, equivalent replacement, improvement, etc. within the scope of the present invention should be included in the protection scope of the present invention.

Claims (6)

1. The MBUS circuit for the centralized meter reading system is characterized by comprising a data signal transmitting sub-circuit, an MBUS data receiving sub-circuit, an MBUS load overload detection sub-circuit, an MBUS power supply control sub-circuit and an MBUS output sub-circuit, wherein the data signal transmitting sub-circuit, the MBUS data receiving sub-circuit, the MBUS load overload detection sub-circuit, the MBUS power supply control sub-circuit and the MBUS output sub-circuit are connected through wires and arranged on a circuit board, the positive power supply input end of the data signal transmitting sub-circuit, the MBUS data receiving sub-circuit, the MBUS load overload detection sub-circuit, the positive power supply input end of the MBUS power supply control sub-circuit and the positive power supply input end of a 3.3V direct current power supply in a transfer collector are connected through wires, the negative power supply input end of the negative power supply of the MBUS data receiving sub-circuit, the negative power supply input end of the MBUS power supply control sub-circuit and the negative power supply of the 3.3V direct current in the transfer collector are grounded through wires, the-18V direct current power supply in the transfer collector is connected with the second negative power supply input end of the MBUS power supply control subcircuit through a wire, the first signal output end of the data signal transmitting subcircuit is connected with the first signal input end of the MBUS load overload detection subcircuit through a wire, the signal output end of the MBUS power supply control subcircuit is connected with the signal input end of the MBUS output subcircuit through a wire, the signal output end of the MBUS output subcircuit is connected with the signal input end of the MBUS data receiving subcircuit, the second signal input end of the MBUS load overload detection subcircuit is connected with the first signal input end of the single chip microcomputer processor of the transfer collector through a wire, and the signal output end of the MBUS data receiving subcircuit is connected with the first signal input end of the single chip microcomputer processor of the transfer collector through a wire
The second signal output end of the data signal transmitting sub-circuit is connected with the third signal input end of the MBUS bus through a wire, and the two signal input ends of the MBUS power supply control sub-circuit are respectively connected with the two control signal output ends of the single chip processor of the transfer collector through wires;
the MBUS load overload detection sub-circuit consists of resistors R7, R8, R9 and R10, polar capacitors C1 and C2 and an integrated chip U2, wherein the resistors are connected through wires, the integrated chip U2 is a dual-voltage comparator integrated circuit, the model is LM393, the number of the resistors is four, and the polarity is electric
The two capacitors are contained, one end of a first resistor R7 is connected with one end of a second resistor R8, the positive electrode of a first polarity capacitor C1 and the pin 6 of the reverse input end of a double-voltage comparator integrated circuit U2, one end of a third resistor R9 is connected with the positive electrode of the second polarity capacitor C2 and the pin 5 of the forward input end of the double-voltage comparator integrated circuit U2, the pin 7 of the output end of the double-voltage comparator integrated circuit U2 is connected with one end of a fourth resistor R10, and the negative electrodes of the two polarity capacitors C1 and C2 are grounded;
the MBUS power supply control sub-circuit is composed of resistors R16, R17, R18, R5 and R6, field effect transistors T1 and T2 and an integrated chip USA, wherein the resistors are connected through wires, the integrated chip U5A is an operational amplifier, the model is LM324, five resistors and two field effect transistors are arranged, one end of the first resistor R16 is connected with one end of the second resistor R17, one end of the reverse input end 2 of the operational amplifier U5A is connected, one end of the output end 1 of the operational amplifier U5A is connected with one end of the third resistor R18, the other end of the third resistor R18 is connected with one end of the first field effect transistor T1, the drain electrode of the second field effect transistor T2 is connected with one end of the fourth resistor R5, the other end of the fifth resistor R6 is connected with the gate electrode of the first field effect transistor T1, the other end of the first resistor R18 is connected with the other end of the fourth resistor R5, and the other end of the second resistor R17 is connected with the source electrode of the first field effect transistor T1. The MBUS output sub-circuit is composed of a resistor R4, a transient diode TVS and a wiring terminal J1, wherein the resistor R4, the transient diode TVS and the wiring terminal J1 are connected through a wire, one end of the resistor R4 is connected with the cathode of the transient diode TVS and one end of the wiring terminal J1, and the anode of the transient diode TVS is connected with the other end of the wiring terminal JI.
2. The MBUS circuit for the centralized meter reading system according to claim 1, wherein the data signal transmitting sub-circuit is composed of resistors, a light emitting diode and an integrated chip, wherein the integrated chip is a power operational amplifier and is provided with a model TLE2301, three resistors are provided, one end of the first resistor is connected with a positive electrode of the light emitting diode, one end of the second resistor is connected with one end of the third resistor, a square reverse input end 4 pin of the power operational amplifier is connected, the other end of the third resistor is connected with an output end 14 pin of the power operational amplifier, and a negative electrode of the light emitting diode is connected with a positive input end 2 pin of the power operational amplifier.
3. The MBUS circuit according to claim 1, wherein the MBUS data receiving sub-circuit is composed of a resistor, a non-polar capacitor, a light emitting diode, a diode and an integrated chip, wherein the integrated chip is a dual-voltage comparator integrated circuit, the model is LM393, the number of the resistors is five, the number of the diodes is two, the anode of the first diode is connected with the anode of the second diode, one end of the non-polar capacitor is connected through a wire, the cathode of the first diode is connected with one end of the first resistor, the cathode of the second diode is connected with one end of the second resistor, the other end of the first resistor is connected with the 3 pin of the positive input end of the dual-voltage comparator integrated circuit, the other end of the second resistor is connected with the 2 pin of the reverse input end of the dual-voltage comparator integrated circuit, one end of the third resistor, the anode of the polar electrolytic capacitor is connected with the anode of the light emitting diode, the cathode of the fourth resistor is connected with the anode of the light emitting diode, the cathode of the light emitting diode is connected with the 5 pin of the output end of the dual-voltage comparator integrated circuit, and the other end of the non-polar capacitor is grounded.
4. The MBUS circuit for the centralized meter reading system according to claim 1, wherein the MBUS load overload detection sub-circuit is composed of resistors, a polarity capacitor and an integrated chip, wherein the integrated chip is a dual-voltage comparator integrated circuit, the model is LM393, the number of the resistors is four, the number of the polarity capacitors is two, one end of the first resistor is connected with one end of the second resistor, the positive electrode of the first polarity capacitor, the negative electrode of the dual-voltage comparator integrated circuit is connected with 6 pins of the reverse input end of the dual-voltage comparator integrated circuit, one end of the third resistor is connected with one end of the second polarity capacitor, the positive electrode of the dual-voltage comparator integrated circuit is connected with 5 pins of the forward input end of the dual-voltage comparator integrated circuit, and the output end 7 pins of the dual-voltage comparator integrated circuit is connected with one end of the fourth resistor, and the negative electrodes of the two polarity capacitors are grounded.
5. The MBUS circuit for the centralized meter reading system according to claim 1, wherein the MBUS power supply control sub-circuit is composed of resistors, field effect transistors and an integrated chip, wherein the resistors, the field effect transistors and the integrated chip are connected through wires, the integrated chip is an operational amplifier, the model is LM324, the number of the resistors is five, the number of the field effect transistors is two, one end of the first resistor is connected with one end of the second resistor, the reverse input end of the operational amplifier is connected with the 2 pin of the reverse input end of the operational amplifier, the 1 pin of the output end of the operational amplifier is connected with one end of the third resistor, the other end of the third resistor is connected with the drain electrode of the first field effect transistor and the grid electrode of the second field effect transistor, one end of the fourth resistor is connected with one end of the fifth resistor, the other end of the fifth resistor is connected with the grid electrode of the first field effect transistor, the other end of the first resistor is connected with the other end of the fourth resistor, and the other end of the second resistor is connected with the source electrode of the first field effect transistor.
6. The MBUS circuit for the centralized meter reading system according to claim 1, wherein the MBUS output sub-circuit is composed of a resistor, a transient diode and a wiring terminal, wherein the resistor, the transient diode and the wiring terminal are connected through a wire, one end of the resistor is connected with the cathode of the transient diode, one end of the wiring terminal is connected with the anode of the transient diode, and the other end of the wiring terminal is connected with the anode of the transient diode.
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CN109360404B (en) * 2018-12-13 2023-08-15 湖南常德牌水表制造有限公司 Multichannel intelligent meter reading remote transmission device and method for M-Bus master station
CN111681403A (en) * 2019-12-26 2020-09-18 深圳市创仁科技有限公司 High-signal-to-noise-ratio 4G water meter collector based on M-BUS
CN113645109A (en) * 2021-01-04 2021-11-12 青岛鼎信通讯股份有限公司 M-Bus interface circuit for acquisition terminal

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0129644A1 (en) * 1983-06-08 1985-01-02 LGZ LANDIS & GYR ZUG AG Amplifier with a low offset voltage
CN101930247A (en) * 2009-06-25 2010-12-29 上海华虹Nec电子有限公司 Voltage reference circuit with automatic protection
CN204833682U (en) * 2015-06-24 2015-12-02 河南卓正电子科技有限公司 Instrument bus converting circuit with short circuit self preservation protects function
CN105823105A (en) * 2016-05-13 2016-08-03 吴建堂 Power supply socket of human body induction delay stop range hood
CN205959108U (en) * 2016-08-16 2017-02-15 哈尔滨彼绍特科技开发有限公司 A constant -current source circuit that is arranged in clear extension of paper currency

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2770634B1 (en) * 2013-02-25 2018-09-19 Telefonaktiebolaget LM Ericsson (publ) Distributed power amplifier circuit

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0129644A1 (en) * 1983-06-08 1985-01-02 LGZ LANDIS & GYR ZUG AG Amplifier with a low offset voltage
CN101930247A (en) * 2009-06-25 2010-12-29 上海华虹Nec电子有限公司 Voltage reference circuit with automatic protection
CN204833682U (en) * 2015-06-24 2015-12-02 河南卓正电子科技有限公司 Instrument bus converting circuit with short circuit self preservation protects function
CN105823105A (en) * 2016-05-13 2016-08-03 吴建堂 Power supply socket of human body induction delay stop range hood
CN205959108U (en) * 2016-08-16 2017-02-15 哈尔滨彼绍特科技开发有限公司 A constant -current source circuit that is arranged in clear extension of paper currency

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