CN107451520A - The preparation method of ultrasonic fingerprint recognizer component electrode pattern - Google Patents
The preparation method of ultrasonic fingerprint recognizer component electrode pattern Download PDFInfo
- Publication number
- CN107451520A CN107451520A CN201710227132.1A CN201710227132A CN107451520A CN 107451520 A CN107451520 A CN 107451520A CN 201710227132 A CN201710227132 A CN 201710227132A CN 107451520 A CN107451520 A CN 107451520A
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- China
- Prior art keywords
- electrode pattern
- mask plate
- preparation
- metal mask
- ultrasonic fingerprint
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Classifications
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06V—IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
- G06V40/00—Recognition of biometric, human-related or animal-related patterns in image or video data
- G06V40/10—Human or animal bodies, e.g. vehicle occupants or pedestrians; Body parts, e.g. hands
- G06V40/12—Fingerprints or palmprints
- G06V40/13—Sensors therefor
- G06V40/1306—Sensors therefor non-optical, e.g. ultrasonic or capacitive sensing
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/042—Coating on selected surface areas, e.g. using masks using masks
Abstract
The present invention relates to fingerprint identification technology field, more particularly to a kind of preparation method of ultrasonic fingerprint recognizer component electrode pattern, it includes providing polarized film in situ, using the metal mask plate with setting pattern, in polarized film away from forming electrode pattern layer in substrate side.By using the metal mask plate with setting pattern, electrode pattern layer is formed on polarized film, line pattern is prepared on polarized film so as to save, the technique of Reperfu- sion silver paste, there is high sensitivity, accuracy is strong, greatly simplifies preparation technology flow；Simultaneously using electrode pattern layer substitution silver paste, production cost is reduced, is adapted to mass large-scale production.
Description
【Technical field】
The present invention relates to fingerprint identification technology field, more particularly to a kind of system of ultrasonic fingerprint recognizer component electrode pattern
Preparation Method.
【Background technology】
At present, fingerprint recognition component is broadly divided into pressure type, condenser type, optical profile type and sound wave type.Wherein, pressure type, electricity
Appearance formula and sound wave type fingerprint recognition component are widely used in electronic product because of its excellent performance, especially sound wave type fingerprint
Recognition means have precision it is high, not by greasy dirt, moisture interference, and the features such as corium, glass, metal and plastics can be penetrated,
More liked by industry.However, sound wave type fingerprint recognition component lines pattern is often prepared using silver paste.Need to make on polarized film
Reserve line pattern, Reperfu- sion silver paste, complex process, cost is higher, is unfavorable for electronic product production in enormous quantities.
【The content of the invention】
The problem of to overcome existing process complexity, the present invention provide a kind of system of ultrasonic fingerprint recognizer component electrode pattern
Preparation Method.
The technical scheme that the present invention solves technical problem is to provide a kind of system of ultrasonic fingerprint recognizer component electrode pattern
Preparation Method, it comprises the following steps：Polarized film in situ is provided, it is remote in polarized film using the metal mask plate with setting pattern
From forming electrode pattern layer in substrate side.
Preferably, using the mask plate with setting pattern, in polarized film away from forming electrode pattern layer in substrate side
Specially：The metal mask plate with a setting pattern is made, metal mask plate is pre-processed, the metal after processing is covered
Template is fitted on polarized film, and metal mask plate void region forms required electrode pattern layer on polarized film.
Preferably, the thickness of the metal mask plate is 0.5-2mm.
Preferably, two relative surfaces of the metal mask plate pre-process by surface treatment to metal mask plate
Make the surface mirror-smooth of fitting polarized film one, another rough surface away from polarized film.
Preferably, surface roughness of the metal mask plate away from polarized film is 50-100 μm.
Preferably, the circuit of the electrode pattern layer is wider than equal to 100 μm.
Preferably, 0.1-0.5 μm of the thickness of the electrode pattern layer.
Preferably, 0.25-0.35 μm of the thickness of the electrode pattern layer.
Preferably, the material of the electrode pattern layer is conducting metal and conductive metal nitride.
Preferably, the metal mask plate is stainless steel, aluminium, titanium or titanium alloy material.
Compared with prior art, a kind of preparation method of ultrasonic fingerprint recognizer component electrode pattern of the present invention has following
Advantage：
By using the metal mask plate with setting pattern, electrode pattern layer is formed on polarized film, so as to save
Line pattern is prepared on polarized film, the technique of Reperfu- sion silver paste, there is high sensitivity, accuracy is strong, greatly simplifies preparation technology
Flow；Simultaneously using electrode pattern layer substitution silver paste, production cost is reduced, is adapted to mass large-scale production.
【Brief description of the drawings】
Fig. 1 is the process flow diagram of ultrasonic fingerprint recognizer component preparation method of the present invention.
Fig. 2 is the technique idiographic flow schematic diagram of ultrasonic fingerprint recognizer component preparation method of the present invention.
Fig. 3 is the process flow diagram that the present invention polarizes macromolecule membrane crystallization and original position.
【Embodiment】
In order that the purpose of the present invention, technical scheme and advantage are more clearly understood, below in conjunction with accompanying drawing and embodiment,
The present invention will be described in further detail.It should be appreciated that the specific embodiments described herein are merely illustrative of the present invention,
It is not intended to limit the present invention.
First embodiment of the invention provides a kind of ultrasonic fingerprint recognizer component preparation method, and it includes step S1, in base
Macromolecule membrane is formed on plate, and macromolecule membrane crystallization and polarization in situ are formed into polarized film；Step S2, it is remote in polarized film
Electrode pattern layer is formed by metal mask plate in substrate side.In embodiments of the present invention, the substrate is for carrying height
The support member of molecular film, the modes such as lead can be used, is changed and transmitted with auxiliary signal, therefore be the substrate of broad sense.It is preferred that
Ground, the substrate are the substrate that surface is provided with thin film transistor (TFT), hereinafter referred to as TFT substrate.Herein below refers to Fig. 1 and figure
2 are specifically described by example of TFT substrate.
Step S1, macromolecule membrane is formed on substrate, and macromolecule membrane crystallization and polarization in situ are formed into polarized film：
It includes step S11, pretreatment；Step S12, forms macromolecule membrane on the tft substrate；Step S13, macromolecule membrane is brilliant
Change and original position is polarized；Specifically include herein below：
Step S11, pretreatment：TFT substrate is cleaned and uses O2Carry out plasma surface treatment.
Step S12, forms macromolecule membrane on the tft substrate：The macromolecule membrane is ferroelectric polymers, concretely
Such as polyvinylidene fluoride PVDF；Polyvinylidene fluoride trifluoro-ethylene PVDF-TrFE, polymetylmethacrylate, polytetrafluoro
Ethene TEFLON etc..Illustrated in the present invention with polyvinylidene fluoride trifluoro-ethylene.Take trifluoro-ethylene and Kynoar
As raw material, with butanone (methyl ethyl ketone, MEK) or 1-METHYLPYRROLIDONE (N-Methyl
Pyrrolidone, NMP) solvent mixing (which material specifically being can also be, confirm with inventor and expand) is used as, before preparation
Body solution.Wherein trifluoro-ethylene and Kynoar proportioning are 1：(3-5), it is preferable that in the precursor solution, trifluoro second
Alkene is 1 with Kynoar proportioning：4.Precursor solution is wherein appointed by spin coating, spraying, slot coated, silk-screen or injection etc.
A kind of mode of anticipating forms the macromolecule membrane less than or equal to 30 μm on the tft substrate.The present invention some preferably in embodiment,
Using coating machine or screen process press, carry out slot coated or be prepared by silk-screen printing, so as to be accurately controlled film forming thickness, to protect
Demonstrate,prove macromolecule membrane thickness and be less than or equal to 30 μm.Control the macromolecule membrane thickness to be less than or equal to 30 μm, electronics can be reduced
The thickness of equipment, reduces cost, improves the applicability of product, while also meets lightening growing to electronic equipment of people
Demand.
Preferably, the macromolecule membrane formed on the tft substrate is less than or equal to 9 μm.Control the macromolecule membrane
Thickness is less than or equal to 9 μm, and it is applicable such as noise measuring equipment, wearable device, sonar system can further to greatly reduce its
The thickness of the products such as product, consumer-elcetronics devices, portable medical device product or structural member detection.
Step S13, macromolecule membrane crystallization and polarization in situ are comprised the following steps：
Referring to Fig. 3, step S131, crystallization processes processing is carried out by macromolecule membrane, to reach 60-70% crystallizations.
Specially macromolecule membrane is pre-processed.The pretreatment is that macromolecule membrane is heated into 100-120 DEG C, removes solvent
NMP or MEK.Macromolecule membrane is first heated to 100-120 DEG C of removing solvent before macromolecule membrane crystallization, to avoid solvent from waving
Hair produces bubble or influences crystallization uniformity, to ensure the quality of macromolecule membrane.Then 100-150 DEG C is again heated to, and is added
Hot macromolecule membrane 3-7h is so that macromolecule membrane reaches 60-70% crystallizations.Specifically laser or strong light can be used to irradiate
Or in atmosphere furnace or common other modes are heated.Infrared light can be selected in the strong light.Preferably, the macromolecule is thin
Film crystallization temperature is 140 ± 1 DEG C, crystallization time 5h, to ensure that macromolecule membrane reaches 60-70% crystallizations, crystal particle diameter
For tens nanometers of effects, uniformity is crystallized in macromolecule membrane so as to improve.In some preferably embodiment, it can formed
During macromolecule membrane, doping introduces the element for promoting crystallization, with laser emission or strong light or atmosphere stove heat
It is preceding to be beneficial to trigger crystallization or produce the nuclei of crystallization and implement to heat.In other preferably embodiment, can continuously repeat into
Row heating, laser emission, heat treatment operations, to reduce defect in crystallization caudacoria.
Step S132, the macromolecule membrane after crystallization is subjected to polarization in situ, to form polarized film.
One kind is provided the China of Application No. 201710108374.9 (for details, reference can be made to specially using electric field original position polarization method
Profit application), comprise the following steps that：
It is first surface that macromolecule membrane, which is defined, close to TFT substrate side, and macromolecule membrane is the away from TFT substrate side
Two surfaces.It is zero to set first surface potential, the first electric field of offer and the second electric field in the top of second surface, described first
Electric field potential is higher than the potential of second electric field, and the environment above macromolecule membrane is ionized in the presence of first electric field
Gas, the environmental gas after the ionization are gathered in the macromolecule membrane second surface through second electric field, make described
The film internal electric field along the film thickness direction is formed in macromolecule membrane, the macromolecule membrane is polarized.Monitoring institute
The degree of polarization of the film electric current and needs of stating macromolecule membrane determines polarization terminal, to form polarized film on the tft substrate, obtains
Obtain polarized film.
Determined in the change of polarization method in situ provided by the present invention by monitoring the film electric current of macromolecule membrane
Polarize terminal, can preferably ensure to obtain that piezo-electric effect is strong and the polarized film of service life length, and when determining same polarization terminal
When, the conductive film consistency of performance obtained every time after polarization is good.
The present invention provides one kind and (for details, reference can be made to Application No. using X ray ionization polarization method in situ
201611222575.3 Chinese patent application), comprise the following steps that：
Setting makes macromolecule membrane potential be zero, and a high electric field and an existing fringing field, institute are provided above macromolecule membrane
The potential that high electric field potential is higher than the existing fringing field is stated, using the environmental gas above X ray ionization macromolecule membrane and in institute
State under high electric field effect, the environmental gas is deposited on the macromolecule membrane surface through the existing fringing field, makes the high score
The film internal electric field along the film thickness direction is formed in sub- film, so as to complete the polarization in situ of the macromolecule membrane.Adopt
With method similar to the above by monitor macromolecule membrane film electric current change come determine polarize terminal.
Referring again to Fig. 1 and Fig. 2, step S2, in polarized film away from forming electrode by metal mask plate in substrate side
Patterned layer.It is included using the metal mask plate with setting pattern, in polarized film away from forming electrode pattern in substrate side
Layer；Its particular content is as follows：
Step S21, the metal mask plate with a setting pattern is made, and metal mask plate is pre-processed；Step
S22, metal mask plate is fitted on polarized film, metal mask plate pattern void region forms required electrode on polarized film
Patterned layer；Step S23, performance test and encapsulation.Comprise the following steps that：
Step S21, the metal mask plate with a setting pattern is made, and metal mask plate is pre-processed：Using
The metal that the on-deformable metal of any of which intensity such as stainless steel, aluminium, titanium or titanium alloy makes the setting pattern is covered
Template.Preferably, metal mask plate is made using stainless steel, to ensure that metal mask plate has certain metal strength not variable
Shape and there is preferable planarization, while also to be easy to clean and reuse to utilize after forming electrode pattern layer.Preferably, the gold
It is 0.5-2mm to belong to mask plate thickness, and to ensure that setting pattern has preferable resolution ratio, while it is suitable to have metal mask plate
Flatness.It is first surface to define metal mask plate fitting polarized film one side, and relative another side is second surface.To metal
Mask plate first surface and second surface are respectively processed the effect for reaching different.Specifically, the first table of fitting polarization mould
The multiple tracks such as face blast, grinding or diamond bit smart car finish, to reach mirror-smooth.Handled by finishing, make first
Surface mirror-smooth, so as to be worn or scratch polarized film when ensureing metal mask plate fitting, ensure product yield.Second table
Face uses sandblasting, is coated with metallic particles or coats antifouling paint etc., increases its surface roughness to 50-100 μm.At processing
Reason the roughness of second surface is reached 50-100 μm, with ensure be vapor-deposited the electrode pattern layer when with stronger combination
Power so that electrode pattern layer stably will not slide or extend, and avoid the occurrence of short circuit or open circuit, improve product yield.
Step S22, metal mask plate is fitted on polarized film, the metal mask plate pattern void region shape on polarized film
Into required electrode pattern layer：The metal mask plate with setting pattern is aligned precisely by the first of the metal mask plate
Surface is fitted in polarized film surface, and control technological temperature is less than or equal to 100 DEG C, and using vapour deposition process, metal is covered on polarized film
Die plate pattern void region forms electrode pattern layer, then metal mask plate is removed, that is, obtains ultrasonic fingerprint recognizer component electricity
Pole figure case, namely transmitting and reception Tx and Rx electrodes.Wherein, the electrode pattern sandwich circuit is prepared using the metal mask plate
Width is more than or equal to 100 μm, and thickness is 0.1-0.5 μm.Preferably, the thickness is 0.25-0.35 μm.Covered using the metal
Template carries out electrode pattern layer preparation, can direct ferroalloy category mask plate, directly removal, it is easy to operate, save and prepare light
The technique of photoresist layer, mask layer and lift-off mask layer etc., greatlys save technological process.Simultaneously using the electricity of the metal material formed
Pole figure pattern layer substitutes silver paste, greatly reduces production cost.
Using CVD method, metal mask plate pattern void region forms electrode pattern layer on polarized film, and its is specific
Comprise the following steps：
The TFT substrate with polarized film in situ obtained in step S13 is placed in magnetic control sputtering film plating device.To magnetic control
The chamber for preparing of Sputting film-plating apparatus is evacuated to 10-5Pa-10Pa, inert gas is passed through while then persistently vacuumizing again, this
Embodiment is preferably argon gas so that air pressure inside is maintained in the range of 0.1-10Pa.
The electronics of caused overheat or other anions for carrying energy in sputter procedure are controlled by electromagnetism field containment, to avoid
It is splashed on intermediate maturity surface, prepares chamber technological temperature less than or equal to 100 DEG C so as to control, realize low temperature vapor deposition
Plated film (particular content may refer to the US009303312B United States Patent (USP)s of Application No.).Using the low temperature vapor deposition electrode
Patterned layer, preparation efficiency is high, can reach and prepare 0.15 μm/min of thickness, i.e., 0.3 μm only needs 2-3min to complete, compared to existing
Having low temperature to be baked standby 0.1 μm of electrode pattern layer thickness slowly needs a few hours, can greatly improve efficiency, shorten manufacturing cycle, have
Beneficial to realizing industrialization production.
The present invention some preferably in embodiment, above-mentioned magnetic control sputtering film plating device is using recirculated cooling water around plated film
Target with aid in reduce temperature；And/or additional auxiliary electrode is introduced around sputtering target material, due to what is formed around sputtering target material
It is positive bias, positive bias is implemented by auxiliary electrode, using the principle that there is a natural attraction between the sexes, by caused hot electron in sputter procedure
Or other anion electronics are adsorbed onto auxiliary electrode surface, reduce hot electron or other anions are banged middle finished surface
Hit, so as to reduce the temperature in sputter procedure (Chinese patent application that for details, reference can be made to Application No. 201611232745.6).
It should be understood that present invention control in sputter procedure prepares chamber technological temperature less than or equal to 100 DEG C, the above is not restricted to
The method for reducing temperature.
Preferably, the material of the electrode pattern layer is common conducting metal or conductive metal nitride.Conductive gold
Category can use any of which such as aluminium, nickel, copper, silver, titanium, tantalum and gold.Conductive metal nitride, such as titanium nitride, nitridation
Niobium, tantalum nitride, tungsten nitride or zirconium nitride any one.
It should be understood that in some preferably embodiment, sputtering, evaporation, arc-plasma plating, ion plating and molecule
Beam epitaxy etc. is used equally for forming the electrode pattern layer.
Step S23, performance test and encapsulation.By TFT component testings, cutting, solidification and encapsulate to glass substrate,
Obtain ultrasonic fingerprint recognizer component.
Second embodiment of the invention provides a kind of ultrasonic fingerprint recognizer component, and it uses ultrasonic fingerprint as described above
Recognizer component preparation method prepares.The ultrasonic fingerprint recognizer component includes substrate, polarized film and electrode pattern layer, institute
State electrode pattern layer and be located at polarized film away from the substrate side.The polarized film is less than or equal to 30 μm, it is preferable that the polarization
Film is less than or equal to 9 μm.Control the polarization film thickness to be less than or equal to 9 μm, it is applicable as noise measuring is set that its can be greatly reduced
The products such as standby, wearable device, sonar system product, consumer-elcetronics devices, portable medical device product or structural member detection
Thickness, also greatly improve its scope of application.Ultrasonic fingerprint is prepared using the ultrasonic fingerprint recognizer component preparation method to know
Other component, preparation method is simple, and cost is low, is adapted to mass large-scale production.
Third embodiment of the invention provides a kind of electronic installation, and it includes ultrasonic fingerprint recognizer component as described above.
The electronic installation includes information technoloy equipment, wearable device, gate inhibition's identification, vehicle-mounted igniting identification, bank, business payment
The electronic product such as system and government or military identification.The electronic installation is had using the ultrasonic fingerprint recognizer component
The features such as high sensitivity, long precision height and service life.
Compared with prior art, a kind of preparation method of ultrasonic fingerprint recognizer component electrode pattern of the present invention has following
Advantage：
By using the metal mask plate with setting pattern, electrode pattern layer is formed on polarized film, so as to save
Line pattern is prepared on polarized film, the technique of the higher cost of Reperfu- sion silver paste, there is high sensitivity, accuracy is strong, significantly simple
Change preparation technology flow；Simultaneously using electrode pattern layer substitution silver paste, production cost is reduced, is adapted to mass to give birth on a large scale
Production.
The foregoing is only present pre-ferred embodiments, be not intended to limit the invention, it is all principle of the present invention it
Interior made any modification, equivalent substitution and improvement etc. all should be included within protection scope of the present invention.
Claims (10)
1. a kind of preparation method of ultrasonic fingerprint recognizer component electrode pattern, it is characterised in that comprise the following steps：There is provided former
Bit polarization film, using the metal mask plate with setting pattern, in polarized film away from forming electrode pattern layer in substrate side.
2. the preparation method of ultrasonic fingerprint recognizer component electrode pattern as described in claim 1, it is characterised in that：Using
Mask plate with setting pattern, it is specially away from formation electrode pattern layer in substrate side in polarized film：Making has one to set
Determine the metal mask plate of pattern, metal mask plate pre-processed, the metal mask plate after processing is fitted on polarized film,
Metal mask plate void region forms required electrode pattern layer on polarized film.
3. the preparation method of ultrasonic fingerprint recognizer component electrode pattern as described in claim 2, it is characterised in that：It is described
The thickness of metal mask plate is 0.5-2mm.
4. the preparation method of ultrasonic fingerprint recognizer component electrode pattern as described in claim 2, it is characterised in that：It is described
By surface treatment, pretreatment is carried out to metal mask plate makes the surface mirror of fitting polarized film one on two relative surfaces of metal mask plate
Face is smooth, another rough surface away from polarized film.
5. the preparation method of ultrasonic fingerprint recognizer component electrode pattern as described in claim 4, it is characterised in that：It is described
Surface roughness of the metal mask plate away from polarized film is 50-100 μm.
6. the preparation method of ultrasonic fingerprint recognizer component electrode pattern as described in claim 1, it is characterised in that：It is described
The circuit of electrode pattern layer is wider than equal to 100 μm.
7. the preparation method of ultrasonic fingerprint recognizer component electrode pattern as described in claim 1, it is characterised in that：It is described
0.1-0.5 μm of the thickness of electrode pattern layer.
8. the preparation method of ultrasonic fingerprint recognizer component electrode pattern as described in claim 7, it is characterised in that：It is described
0.25-0.35 μm of the thickness of electrode pattern layer.
9. the preparation method of the ultrasonic fingerprint recognizer component electrode pattern as described in Claims 2 or 3, it is characterised in that：
The material of the electrode pattern layer is conducting metal and conductive metal nitride.
10. the preparation method of ultrasonic fingerprint recognizer component electrode pattern as described in claim 6, it is characterised in that：Institute
It is stainless steel, aluminium, titanium or titanium alloy material to state metal mask plate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201710227132.1A CN107451520A (en) | 2017-04-05 | 2017-04-05 | The preparation method of ultrasonic fingerprint recognizer component electrode pattern |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201710227132.1A CN107451520A (en) | 2017-04-05 | 2017-04-05 | The preparation method of ultrasonic fingerprint recognizer component electrode pattern |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113427921A (en) * | 2021-06-01 | 2021-09-24 | Tcl华星光电技术有限公司 | Silver paste transfer printing method, Micro-LED transfer printing method and Micro-LED |
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| JP2009166392A (en) * | 2008-01-17 | 2009-07-30 | Ngk Insulators Ltd | Metal mask plate and manufacturing method for metal mask plate |
| CN203932122U (en) * | 2012-09-18 | 2014-11-05 | 应用材料公司 | For the mask of Organic Light Emitting Diode processing |
| JP2015157412A (en) * | 2014-02-24 | 2015-09-03 | 直江津電子工業株式会社 | Electrode printing device, and electrode printing method |
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| JPH0774407A (en) * | 1993-08-31 | 1995-03-17 | Toray Ind Inc | Piezoelectric high polymer film, surface wave piezoelectric element and ultrasonic transducer |
| CN101083302A (en) * | 2006-05-31 | 2007-12-05 | 中国科学院微电子研究所 | Method for preparing anisotropic organic field effect tube combined with stamp technology |
| JP2009166392A (en) * | 2008-01-17 | 2009-07-30 | Ngk Insulators Ltd | Metal mask plate and manufacturing method for metal mask plate |
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| CN113427921A (en) * | 2021-06-01 | 2021-09-24 | Tcl华星光电技术有限公司 | Silver paste transfer printing method, Micro-LED transfer printing method and Micro-LED |
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