CN107403821B - Multilayer film with double spacer layers and capable of forming ferromagnetic or antiferromagnetic coupling - Google Patents
Multilayer film with double spacer layers and capable of forming ferromagnetic or antiferromagnetic coupling Download PDFInfo
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- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
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Abstract
The invention relates to a multilayer film which has double spacing layers and can form ferromagnetic or antiferromagnetic coupling, which at least comprises a first ferromagnetic layer and a second ferromagnetic layer, wherein two spacing layers are adopted to couple the two ferromagnetic layers together in a ferromagnetic or antiferromagnetic way through interlayer coupling between the first ferromagnetic layer and the second ferromagnetic layer; the multilayer film can present perpendicular magnetic anisotropy, the multilayer film can present in-plane magnetic anisotropy, and the multilayer film is sequentially provided with a second ferromagnetic layer, a second interlayer, a first interlayer and a first ferromagnetic layer from bottom to top; the first ferromagnetic layer and the second ferromagnetic layer refer to thin film layers formed by ferromagnetic materials, in the same structure, the upper ferromagnetic layer and the lower ferromagnetic layer can be coupled together ferromagnetically or antiferromagnetically through interlayer coupling, and the multilayer film structure has different advantages by selecting materials with different properties of spacing layers, and can be used for realizing a spintronic device with the advantages of strong magnetic anisotropy, low damping coefficient, high tunneling magnetoresistance ratio value and the like.
Description
Technical Field
The invention relates to a multilayer film which has double spacing layers and can form ferromagnetic or antiferromagnetic coupling, can be used for realizing a spintronic device with the advantages of strong magnetic anisotropy, low damping coefficient and the like, and belongs to the technical field of nonvolatile magnetic memories and magnetic logics.
Background
Magnetic Random Access Memory (MRAM) is expected to become a next-generation low-power-consumption general Memory due to its advantages of non-volatility, high-speed reading and writing, low power consumption, near infinite repeated erasing and writing, and the like, and is widely concerned by the academic and industrial fields.
A core device for implementing a memory function in a Magnetic random access memory is a Magnetic Tunnel Junction (MTJ), and an effective structure of the MTJ generally includes a reference layer made of a ferromagnetic metal, a barrier layer made of a metal oxide, and a free layer made of a ferromagnetic metal. Meanwhile, the reference layer needs to be connected with a pinning layer made of an antiferromagnetic metal in order to fix its magnetization direction. Before preparing the effective structure of the magnetic tunnel junction, a buffer layer with a certain thickness needs to be deposited on a substrate, so that the surface roughness is reduced, and the growth crystal orientation formation of the ultrathin multilayer film is promoted. The buffer layer is typically a non-ferromagnetic metal, such as tantalum/ruthenium/tantalum (Ta/Ru/Ta) is typical. Correspondingly, a similar structure, called a protective layer, needs to be deposited above the active structure to prevent oxidation and protect the active structure.
By changing the magnitude and direction of the applied magnetic field or current, the magnetic tunnel junction can exhibit different resistance states. When the magnetization directions of the reference layer and the free layer are the same, the magnetic tunnel junction exhibits a low resistance state RLRepresents data "0"; conversely, when the magnetization directions of the reference layer and the free layer are opposite, the magnetic tunnel junction exhibits a high resistance state RHAnd represents data "1". The parameter used to measure the difference between high and low resistances is the Tunneling Magnetoresistance Ratio (TMR), and the higher the value, the more reliable the data reading.
Early magnetic random access memories employed in-plane magnetic anisotropic tunnel junctions, but because they required large aspect ratios, it was difficult to maintain high thermal stability barriers and achieve large storage densities; meanwhile, due to the action of a demagnetizing field, the spin transfer torque overturning efficiency of the in-plane magnetic anisotropic tunnel junction is low. In 2010, S.Ikeda et al prepared a Perpendicular Magnetic Anisotropy (PMA) based Magnetic tunnel junction with a structure of Ta/CoFeB/MgO/CoFeB/Ta (Ikeda et al, Nature Materials 9,721 (2010)). When the CoFeB layer is sufficiently thin (less than 1.5nm), the interfacial perpendicular magnetic anisotropy can overcome the demagnetizing field, making the easy axis of the CoFeB layer perpendicular to the film plane. However, as the size of the magnetic tunnel junction is reduced, the effective perpendicular magnetic anisotropy of the structure is reduced, resulting in insufficient thermal stability of the structure and unstable storage of data. Secondly, the ultra-thin CoFeB layer (<1.5nm) has a large magnetic damping coefficient, resulting in a large critical switching current of the structure.
In 2012, researchers proposed a MgO/CoFeB/spacer/CoFeB/MgO dual interface structure (Sato H et al, Applied Physics Letters,101(2):022414, (2012)), a typical structure of which is shown in FIG. 1. In the structure, a spacer Layer is inserted between two layers of CoFeB, and when the thickness of the spacer Layer is proper, the two adjacent layers of CoFeB have stronger interlayer coupling and can be simultaneously turned over under the action of an external magnetic field, so that the magnetization direction of the spacer Layer can be used for storing data and is called a Recording Layer (Recording Layer). The structure has two CoFeB/MgO and two CoFeB/spacer layer interfaces, thereby being capable of enhancing the perpendicular magnetic anisotropy and simultaneously enhancing the thermal stability. In addition, the structure is equivalent to increasing the thickness of the CoFeB layer, and the magnetic damping coefficient of the structure can be reduced, so that the critical switching current density is reduced. When ruthenium (Ru) is used as a spacer layer material, the interlayer coupling effect of the double-interface structure is remarkably improved due to the strong RKKY (Ruderman-Kittel-Kasuya-Yosida) coupling effect of the Ru; however, the interface of Ru and adjacent CoFeB cannot generate strong perpendicular magnetic anisotropy. When tantalum (Ta) or hafnium (Hf) is used as the spacer material, Ta and Hf adjacent to the ferromagnetic material will increase the magnetic damping coefficient, although strong perpendicular magnetic anisotropy can be generated at the CoFeB interface. Therefore, how to obtain stronger interlayer coupling and simultaneously realize strong perpendicular magnetic anisotropy and low magnetic damping coefficient is a problem to be solved urgently at present.
Disclosure of Invention
1. Objects of the invention
The invention provides a magnetic multilayer film with double spacing layers, which aims at the problems of the double interface structure mentioned in the background, in particular to a multilayer film structure which has double spacing layers and can form ferromagnetic or antiferromagnetic coupling and can be used for realizing a spintronic device with the advantages of strong magnetic anisotropy, low damping coefficient, high tunneling magnetoresistance ratio value and the like.
2. Technical scheme
The invention provides a multilayer film which has a double spacer layer and can form ferromagnetic or antiferromagnetic coupling, and the multilayer film at least comprises a first ferromagnetic layer and a second ferromagnetic layer, and is characterized in that: two spacer layers are used between the first and second ferromagnetic layers to couple the two ferromagnetic layers together ferromagnetically or antiferromagnetically through interlayer coupling. As shown in fig. 2(a), the multilayer film may exhibit perpendicular magnetic anisotropy, and the multilayer film structure includes, from bottom to top, a second ferromagnetic layer 201, a second spacer layer 202, a first spacer layer 203, and a first ferromagnetic layer 204; as shown in fig. 2(b), the multilayer film may exhibit in-plane magnetic anisotropy, and the multilayer film structure includes, from bottom to top, a second ferromagnetic layer 206, a second spacer layer 207, a first spacer layer 208, and a first ferromagnetic layer 209; reference numerals 210 and 211 symbolize the coupling between the two ferromagnetic layers.
First ferromagnetic layers 204, 209 and second ferromagnetic layers 201, 206 refer to thin film layers formed of ferromagnetic materials, and the upper and lower ferromagnetic layers can be coupled together ferromagnetically or antiferromagnetically in the same structure by interlayer coupling. The material is one or the combination of a plurality of layers of Co, CoFeB, FeB, CoFe, Fe, Heusler alloy, Co/Pt multilayer films, Co/Pd multilayer films and the like; the thickness is generally 0.2 to 5nm, and the material and thickness of the first ferromagnetic layer and the second ferromagnetic layer may be different.
In the multilayer film structure that can exhibit perpendicular magnetic anisotropy, the first spacer layer 203 and the second spacer layer 202 refer to a metal or an alloy material between two ferromagnetic layers, and the role of the material is to utilize different properties of the two materials to obtain two or more advantageous properties at the same time: for example, one material is used to provide high interfacial perpendicular magnetic anisotropy and another material is used to reduce the magnetic damping coefficient, or one material is used to provide a high tunneling magnetoresistance ratio and another material is used to reduce the magnetic damping coefficient; the thickness of the ferromagnetic material serving as the free layer is indirectly increased, and the magnetic damping coefficient is further reduced, so that the overturning current is reduced; the two ferromagnetic layers form interlayer coupling, and the coercive field is improved. The first spacer layer and the second spacer layer are made of metal, and can be selected from one or more of tungsten (W), platinum (Pt), osmium (Os), rhenium (Re), chromium (Cr), rhodium (Rh), copper (Cu), palladium (Pd), bismuth (Bi), molybdenum (Mo), hafnium (Hf), niobium (Nb), iridium (Ir), gold (Au), silver (Ag), titanium (Ti), vanadium (V) and manganese (Mn), and the thickness of the alloy is generally 0.02-2 nm, and the thicknesses of the first spacer layer and the second spacer layer can be different and are made of different materials.
In the multilayer film structure capable of exhibiting in-plane magnetic anisotropy, the first spacer layer 208 and the second spacer layer 207 refer to a metal or an alloy material between two ferromagnetic layers, and the function of the multilayer film structure is to utilize different properties of the two materials, wherein one material is used for providing a high tunneling magnetoresistance ratio value, and the other material is used for reducing a magnetic damping coefficient, so that the switching current is further reduced; the two ferromagnetic layers form interlayer coupling, and the coercive field is improved. The first spacer layer and the second spacer layer are made of metal, and can be selected from one or more of tungsten (W), platinum (Pt), osmium (Os), rhenium (Re), chromium (Cr), rhodium (Rh), copper (Cu), palladium (Pd), bismuth (Bi), molybdenum (Mo), hafnium (Hf), niobium (Nb), iridium (Ir), gold (Au), silver (Ag), titanium (Ti), vanadium (V) and manganese (Mn), and the thickness of the alloy is generally 0.02-2 nm, and the thicknesses of the first spacer layer and the second spacer layer can be different and are made of different materials.
Wherein, the multilayer film with double spacer layers and capable of forming ferromagnetic or antiferromagnetic coupling is deposited on the upper and lower sides of a conventional structure, which can be selected from but not limited to an oxide barrier layer, a non-ferromagnetic metal or a metal alloy. Selecting proper materials and thicknesses of the ferromagnetic layer, the spacer layer and the upper and lower traditional structures; the magnetic multilayer film structure with double spacer layers can be used as a free layer, a reference layer and a pinning layer in a magnetic tunnel junction. When the conventional structure is an oxide barrier layer, the material is one or a combination of several of magnesium oxide, aluminum oxide, magnesium aluminum oxide, hafnium oxide, tantalum oxide and the like, preferably MgO and Al2O3Or MgAl2O4Etc., generally 0.2 to 5nm in thickness; when the conventional structure is a non-ferromagnetic metal or metal alloy, the material is selected from one or a combination of several materials such as Ta, Ru, W, Pt, Pd, Bi, Mo, Hf, Nb, Ir, Os, Re, Cr, Rh, Cu, etc., and the general thickness is 0.1-100 nm.
The common element proportion of the CoFeB can be Co20Fe60B20、Co40Fe40B20Or Co60Fe20B20And the like, wherein the numbers represent percentages of elements, but are not limited to the ratios of the elements described herein.
The common element proportion of the FeB can be Fe80B20And the like, wherein the numbers represent percentages of elements, but are not limited to the ratios of the elements described herein.
The above-mentionedThe common element proportion of CoFe can be Co50Fe50、Co20Fe80、Co80Fe20And the like, wherein the numbers represent percentages of elements, but are not limited to the ratios of the elements described herein.
The Heusler alloy may be cobalt iron aluminum (Co)2FeAl), cobalt manganese silicon (Co)2MnSi), and the like, wherein the element types and the element proportions can be changed.
3. Advantages and effects
(1) When the multilayer film structure capable of exhibiting perpendicular magnetic anisotropy is used as a free layer in a magnetic tunnel junction, two oxide barrier layers are deposited on the upper and lower sides of the first ferromagnetic layer 204 and the second ferromagnetic layer 201, respectively. Firstly, due to the insertion of the spacer layer, the structure is provided with two ferromagnetic layers/oxide barrier layers and two ferromagnetic layers/spacer layer interfaces, so that the perpendicular magnetic anisotropy can be enhanced, the thermal stability can be enhanced, and meanwhile, the effective free layer thickness is increased, and the magnetic damping coefficient can be reduced; second, the second ferromagnetic layer 201 adjacent to the oxide barrier layer may have a thickness smaller than that of the first ferromagnetic layer 204, and the second spacer layer 202 is selected from but not limited to metals or metal alloys with stronger spin-orbit coupling such as W, Bi, Mo, Hf, Nb, Ir, etc. for generating strong perpendicular magnetic anisotropy; meanwhile, when materials such as W and the like which can generate larger scattering state density at a CoFe interface are selected, a larger TMR value can be generated; third, the first spacer layer 203 is selected from but not limited to a metal or a metal alloy with weak spin-orbit coupling such as Ti, V, etc., to reduce the magnetic damping coefficient of the structure. In summary, the structure improves perpendicular magnetic anisotropy and thermal stability compared to a free layer without an intervening spacer layer; compared with a free layer of a single spacing layer, the structure ensures low damping coefficient and obtains strong perpendicular magnetic anisotropy due to the simultaneous existence of two spacing layers with different characteristics.
(2) When the multilayer film structure capable of exhibiting in-plane magnetic anisotropy is used as a free layer in a magnetic tunnel junction, an oxide barrier layer is deposited on at least one of the upper and lower sides of the first ferromagnetic layer 209 and the second ferromagnetic layer 206. First, when one of the spacers 207 or 208 is selected from materials such as W, but not limited to those that can generate a larger scattering state density at the CoFe interface, a larger TMR value is generated; and the other spacer layer is not limited to metal or metal alloy with weak spin-orbit coupling such as Cu and V, so that the magnetic damping coefficient of the structure is reduced, and the structure not only ensures low damping coefficient, but also ensures high TMR value.
(3) When the magnetic multilayer film structure with the double spacing layers is used as a reference layer in a magnetic tunnel junction, due to the existence of the spacing layers, RKKY coupling exists between the first ferromagnetic layers 204 and 209 and the second ferromagnetic layers 201 and 206, and the coupling enables the switching field of the structure to be larger compared with that of a single ferromagnetic layer structure, so that the switching field difference between the structure and the free layer structure is enlarged, and reading errors are not easy to occur.
(4) When the Magnetic multilayer film structure with the double spacer layer is applied to a Voltage-Controlled Magnetic Anisotropy (VCMA) device, two oxide barrier layers are deposited on the upper and lower sides of the first ferromagnetic layers 204 and 209 and the second ferromagnetic layers 201 and 206, respectively. The voltage at the interface of first ferromagnetic layer 204, 209 and the oxide barrier layer after application of a voltage is in the opposite direction of the voltage at the interface of second ferromagnetic layer 201, 206 and the oxide barrier layer. By respectively selecting a material with positive VCMA coefficient and a material with negative VCMA coefficient as two spacing layers, the whole VCMA coefficient can be changed into the sum of absolute values of VCMA coefficients of two structures, and the VCMA effect is greatly improved.
Drawings
Fig. 1 is a schematic diagram of a double-interface structure. The structure has two barrier layers, two ferromagnetic layers and an intermediate layer. The barrier layer material is MgO, the ferromagnetic layer material is CoFeB, and the intermediate layer material is Ta.
Fig. 2(a) is a schematic structural diagram of a multilayer film structure 200 with perpendicular magnetic anisotropy according to the present invention, which includes, from bottom to top, a second ferromagnetic layer 201, a second spacer layer 202, a first spacer layer 203, and a first ferromagnetic layer 204;
fig. 2(b) is a schematic structural diagram of the multilayer film structure 205 with in-plane magnetic anisotropy according to the present invention, which includes, from bottom to top, a second ferromagnetic layer 206, a second spacer layer 207, a first spacer layer 208, and a first ferromagnetic layer 209.
FIG. 3 is a schematic diagram of a first embodiment of the present invention as a free layer in a perpendicular magnetic anisotropy magnetic tunnel junction.
FIG. 4 is a schematic diagram of a free layer in an in-plane magnetic anisotropic magnetic tunnel junction according to a second embodiment of the present invention.
FIG. 5 is a schematic diagram of a third embodiment of the present invention as a reference layer in a perpendicular magnetic anisotropy magnetic tunnel junction.
FIG. 6 is a schematic diagram of the structure of the pinning layer in the perpendicular magnetic anisotropy magnetic tunnel junction according to the fourth embodiment of the present invention.
Fig. 7 is a schematic structural diagram of the voltage-controlled magnetic anisotropic device according to the fifth embodiment of the present invention.
Detailed Description
The following examples are intended to illustrate the invention, but are not intended to limit the scope of the invention. The essential features of the invention are further explained with reference to the drawings. The figures are schematic. The thickness and size of the functional layers or regions involved therein are not actual dimensions.
Detailed exemplary embodiments are disclosed herein with specific structural and functional details representative of the purposes of describing the exemplary embodiments only, and thus the present invention may be embodied in many alternate forms and should not be construed as limited to only the exemplary embodiments set forth herein but rather as covering all modifications, equivalents, and alternatives falling within the scope of the present invention.
The first embodiment is as follows:
FIG. 3 is a schematic diagram of the structure of the free layer in the perpendicular magnetic anisotropy magnetic tunnel junction according to the invention. In the fabrication process, a buffer layer 302 is first deposited over a substrate 301, over which are sequentially a pinned layer 303, a reference layer 304, a second oxide barrier layer 305, a free layer 308, and a capping layer 307. In some embodiments, the buffer layer 302 is a Ta/Ru/Ta multilayer film for reducing surface roughness while promoting growth orientation formation of the ultrathin multilayer film; the pinning layer 303 is a Co/Pt multilayer film for fixing the magnetization direction of the reference layer; the reference layer 304 is Co20Fe60B20A thickness of1.3nm, whose magnetization is fixed by the pinned layer, for providing a reference; the second oxide barrier layer 305 is MgO and is 0.9nm thick to provide tunneling; the free layer 308 is composed of the multilayer film structure 200 capable of exhibiting perpendicular magnetic anisotropy and the first oxide barrier layer 306, wherein the second ferromagnetic layer 201 is Co20Fe60B20The thickness is 0.8 nm; the material of the second spacer layer 202 is Bi, and the thickness is 0.2 nm; the material of the first spacing layer 203 is V, and the thickness is 0.2 nm; the first ferromagnetic layer 204 material is Co20Fe60B20The thickness is 1.5 nm; the first oxide barrier layer 306 material is MgO, 0.9nm thick; the capping layer 307 is Ta/Ru/Ta, which has anti-oxidation and protection effects.
In the above structure, the first ferromagnetic layer 204 and the second ferromagnetic layer 201 are coupled together by ferromagnetic coupling, and meanwhile, the CoFeB/Bi interface and the two CoFeB/MgO interfaces can provide strong perpendicular magnetic anisotropy of the interfaces, so that the thermal stability is improved; the CoFeB/V interface can effectively reduce the magnetic damping coefficient due to weaker spin orbit coupling, thereby reducing the overturning current; meanwhile, the thickness of the equivalent free layer is 2.3nm, and the magnetic damping coefficient and the overturning current are further reduced. Therefore, the whole structure has the characteristics of strong interface perpendicular magnetic anisotropy, high thermal stability and low damping coefficient. In addition, after the cross section area of the multilayer film structure is reduced within a certain range, the structure can still keep higher thermal stability, so that the device size can be reduced, and the magnetic storage density can be increased.
Example two:
FIG. 4 is a schematic diagram of the structure of the free layer in the in-plane magnetic anisotropic magnetic tunnel junction of the present invention. In the fabrication process, a buffer layer 402 is first deposited over a substrate 401, over which are in turn a pinned layer 403, a reference layer 404, a second oxide barrier layer 405, a free layer 408, and a capping layer 407. In some embodiments, the buffer layer 402 is a Ta/Ru/Ta multilayer film for reducing surface roughness while promoting growth orientation formation of the ultrathin multilayer film; the pinning layer 403 is made of antiferromagnetic material such as PtMn or IrMn for fixing the magnetization direction of the reference layer; the reference layer 404 is Co20Fe60B202.5nm thick with its magnetization fixed by the pinned layer for providing reference; the second oxide barrier layer 405 is MgO and is 0.9nm thick to provide tunneling effect; the free layer 408 is composed of a multilayer film structure 205 capable of exhibiting in-plane magnetic anisotropy and a first oxide barrier layer 406, wherein the material of the second ferromagnetic layer 206 is Co20Fe60B20The thickness is 1.5 nm; the second spacer layer 207 is made of W and has a thickness of 0.2 nm; the material of the first spacing layer 208 is V, and the thickness is 0.2 nm; the first ferromagnetic layer 209 material is Co20Fe60B20The thickness is 2 nm; the first oxide barrier layer 406 material is MgO and is 0.9nm thick; the cover layer 407 is Ta/Ru/Ta, which plays the role of oxidation prevention and protection.
In the above structure, the first ferromagnetic layer 209 and the second ferromagnetic layer 206 are coupled together by ferromagnetic coupling, and at the same time, the CoFeB/W interface can generate a larger scattering state density, resulting in a larger TMR value; the CoFeB/V interface can effectively reduce the magnetic damping coefficient due to weaker spin-orbit coupling, thereby reducing the switching current. Therefore, the whole structure has the characteristics of high TMR value and low damping coefficient.
Example three:
FIG. 5 is a schematic diagram of the structure of the reference layer in the perpendicular magnetic anisotropy magnetic tunnel junction of the present invention. In the fabrication process, a buffer layer 502 is first deposited over the substrate, above which are in turn a pinned layer 503, a reference layer 508, a first oxide barrier layer 505, a free layer 506, and a capping layer 507. In some embodiments, the buffer layer 502 is a Ta/Ru/Ta multilayer film for reducing surface roughness while promoting growth orientation formation of the ultrathin multilayer film; the pinned layer 503 is a Co/Pt multilayer film for fixing the magnetization direction of the reference layer; the reference layer 508 is composed of a second oxide barrier layer 504 structure and a multilayer film structure 200 that can exhibit perpendicular magnetic anisotropy, wherein the second oxide barrier layer 504 material is MgO and has a thickness of 0.9 nm; the second ferromagnetic layer 201 material is Co20Fe60B20The thickness is 1.2 nm; the second spacer layer 202 is made of Cu and has a thickness of 0.2 nm; the material of the first spacing layer 203 is W, and the thickness is 0.2 nm; the first ferromagnetic layer 204 material is Co20Fe60B20The thickness is 1.2 nm; the first oxide barrier layer 405 is MgO and is 0.9nm thick to provide tunneling; the free layer 506 being Co20Fe60B20The thickness is 0.8nm, and the magnetization direction can change along with the change of an external magnetic field or an external electric field; the covering layer 507 is Ta/Ru/Ta, which plays the role of oxidation prevention and protection.
In the above structure, first ferromagnetic layer 204 and second ferromagnetic layer 201 are coupled together by antiferromagnetic coupling, and second oxide barrier layer 504 is single crystalline, providing a template for second ferromagnetic layer 201 to form a good crystal orientation; the CoFeB/W interface and the two CoFeB/MgO interfaces can provide strong perpendicular magnetic anisotropy of the interfaces, so that the thermal stability of the structure is improved; since the second spacer layer 202Cu has a strong interlayer coupling effect, the switching field of the reference layer is increased compared to that of a single CoFeB layer as the reference layer, and the possibility of reading and writing errors is reduced.
Example four:
FIG. 6 is a schematic diagram showing the structure of the pinned layer in the magnetic tunnel junction according to the present invention. In the fabrication process, a buffer layer 602 is first deposited over the substrate, above which are in turn a pinned layer 607, a reference layer 603, an oxide barrier layer 604, a free layer 605, and a capping layer 606. In some embodiments, the buffer layer 602 is a Ta/Ru/Ta multilayer film for reducing surface roughness while promoting growth orientation formation of the ultrathin multilayer film; in the pinning layer 607, if the multilayer film structure 200 which can exhibit perpendicular magnetic anisotropy as in fig. 2(a) and 2(b) is regarded as a whole, the pinning layer is composed of a plurality of multilayer film structures 200 which can exhibit perpendicular magnetic anisotropy, wherein each of the multilayer film structures 200 which can exhibit perpendicular magnetic anisotropy may be directly stacked together, or may be coupled together through an intervening spacer layer by antiferromagnetic coupling to form an antiferromagnetic structure, and finally coupled together with the reference layer through a third spacer layer for fixing the magnetization direction of the reference layer; the materials of the multilayer film structure 200 capable of exhibiting perpendicular magnetic anisotropy, namely the second ferromagnetic layer 201, the second spacer layer 202, the first spacer layer 203 and the first ferromagnetic layer 204, are Co/Pt/V/Co in sequence; the reference layer 603 is Co20Fe60B201.3nm thick, with its magnetization fixed by the pinned layer for providing a reference; the oxide barrier layer 604 is made of MgO and has a thickness of 0.9nm, and is used for providing a tunneling effect; the free layer 605 is Co20Fe60B20The thickness is 0.8nm, and the magnetization direction can change along with the change of an external magnetic field or an external electric field; the capping layer 606 is Ta/Ru/Ta, which provides protection against oxidation.
Example five:
FIG. 7 is a schematic structural diagram of the voltage-controlled magnetic anisotropy device of the present invention. In the fabrication process, a buffer layer 702 is first deposited on the substrate, on which a bottom electrode 703, a reference layer 704, a second oxide barrier layer 705, 200 structure, a first oxide barrier layer 706 and a top electrode 707 are sequentially disposed. In some embodiments, the buffer layer 702 is a Ta/Ru/Ta multilayer film for reducing surface roughness while promoting growth orientation formation of the ultrathin multilayer film; the bottom electrode 703 is Ta; the reference layer 704 is Co20Fe60B201.3nm thick, with its magnetization fixed by the pinned layer for providing a reference; the second oxide barrier layer 705 is MgO and 2nm thick to provide tunneling effect; the second ferromagnetic layer 201 material is Co20Fe60B20The thickness is 1.5 nm; the second interlayer 202 is made of a metal material with a negative VCMA coefficient, and is made of one or more of tungsten (W), platinum (Pt), osmium (Os), rhenium (Re), chromium (Cr), rhodium (Rh), copper (Cu), palladium (Pd), bismuth (Bi), molybdenum (Mo), hafnium (Hf), niobium (Nb), iridium (Ir), gold (Au), silver (Ag), titanium (Ti), vanadium (V) and manganese (Mn), and the thickness of the alloy is 0.2 nm; the first spacer layer is made of a metal material with positive VCMA coefficient, and can be selected from one or an alloy formed by several materials of tungsten (W), platinum (Pt), osmium (Os), rhenium (Re), chromium (Cr), rhodium (Rh), copper (Cu), palladium (Pd), bismuth (Bi), molybdenum (Mo), hafnium (Hf), niobium (Nb), iridium (Ir), gold (Au), silver (Ag), titanium (Ti), vanadium (V) and manganese (Mn), and the thickness of the alloy is 0.2 nm; the first ferromagnetic layer 204 material is Co20Fe60B20The thickness is 0.8 nm; first oxide barrier layer 706 is MgO and 2nm thick for inducing first ferromagnetic layer 204 to form good grainsA lattice structure and enhances the perpendicular magnetic anisotropy; the top electrode 707 is Ta.
In the specific example described above, the electric field is generated by applying high and low potential voltages to the top and bottom electrodes. For the capping layer and the first ferromagnetic layer, the voltage drop direction is from MgO to Co20Fe60B20And for the second ferromagnetic layer and the buffer layer, the voltage drop direction is from Co20Fe60B20To MgO; on the other hand, since the signs of the VCMA coefficients of the two spacer layers are opposite, when these two factors act together, the VCMA coefficient of the entire structure becomes (VCMA)General assembly＝(VCMA)++ |(VCMA)-And the method is greatly improved.
The thin film structure is a layered thin film stack structure, and is prepared by growing materials of each layer on a substrate or other multilayer films in sequence from bottom to top by adopting the traditional methods of magnetron sputtering, molecular beam epitaxy or atomic layer deposition and the like, and then carrying out the traditional nanometer device processing technologies of photoetching, etching and the like, wherein the cross section area of each thin film layer is basically equal, and the shape of the cross section is generally one of a circle, an ellipse, a square or a rectangle.
Finally, it should be noted that, although the present invention has been described in detail with reference to the embodiments, those skilled in the art should understand that modifications and equivalent substitutions can be made to the technical solution of the present invention without departing from the spirit and scope of the technical solution of the present invention, and all of them should be covered in the claims of the present invention.
Claims (8)
1. A multilayer film having a dual spacer layer and capable of forming a ferromagnetic or antiferromagnetic coupling comprising at least a first ferromagnetic layer and a second ferromagnetic layer, wherein: between the first ferromagnetic layer and the second ferromagnetic layer, two spacer layers are used to couple the two ferromagnetic layers together ferromagnetically or antiferromagnetically through interlayer coupling;
the multilayer film structure comprises a second ferromagnetic layer, a second spacing layer, a first spacing layer and a first ferromagnetic layer from bottom to top in sequence;
the multilayer film structure comprises a second ferromagnetic layer, a second spacing layer, a first spacing layer and a first ferromagnetic layer from bottom to top in sequence;
the first ferromagnetic layer and the second ferromagnetic layer refer to thin film layers formed by ferromagnetic materials, and in the same structure, the upper ferromagnetic layer and the lower ferromagnetic layer are coupled together ferromagnetically or antiferromagnetically through interlayer coupling; the materials of the first ferromagnetic layer and the second ferromagnetic layer are one or a combination of a plurality of layers of Co, CoFeB, FeB, CoFe, Fe, Heusler alloy, Co/Pt multilayer films and Co/Pd multilayer film materials; the thickness is 0.2-5 nm, and the first ferromagnetic layer and the second ferromagnetic layer are made of different materials and have different thicknesses;
the multilayer film exhibits perpendicular magnetic anisotropy, wherein the first spacer layer and the second spacer layer refer to a metal or alloy material between two ferromagnetic layers, and two advantageous properties are simultaneously obtained by utilizing different properties of the two materials: that is, one material is used to provide high interface perpendicular magnetic anisotropy and the other material is used to reduce magnetic damping coefficient, or one material is used to provide high tunneling magnetoresistance ratio and the other material is used to reduce magnetic damping coefficient; the thickness of the ferromagnetic material serving as the free layer is indirectly increased, and the magnetic damping coefficient is further reduced, so that the overturning current is reduced; the two ferromagnetic layers form interlayer coupling, so that the coercive field is improved;
the multilayer film is in-plane magnetic anisotropy, wherein the first spacing layer and the second spacing layer are metal or alloy materials between the two ferromagnetic layers, different properties of the two materials are utilized, one material is used for providing a high tunneling magnetoresistance ratio value, and the other material is used for reducing a magnetic damping coefficient, so that the switching current is further reduced; the two ferromagnetic layers form interlayer coupling, and the coercive field is improved.
2. A multilayer film having dual spacer layers and capable of forming a ferromagnetic or antiferromagnetic coupling as claimed in claim 1 wherein: the first spacing layer and the second spacing layer are made of metal and are made of one or more of tungsten (W), platinum (Pt), osmium (Os), rhenium (Re), chromium (Cr), rhodium (Rh), copper (Cu), palladium (Pd), bismuth (Bi), molybdenum (Mo), hafnium (Hf), niobium (Nb), iridium (Ir), gold (Au), silver (Ag), titanium (Ti), vanadium (V) and manganese (Mn), the thickness of the alloy is 0.02-2 nm, and the first spacing layer and the second spacing layer are either the same in thickness or different in thickness and are made of different materials.
3. A multilayer film having dual spacer layers and capable of forming a ferromagnetic or antiferromagnetic coupling as claimed in claim 1 wherein: the first spacing layer and the second spacing layer are made of metal and are made of one or more of tungsten (W), platinum (Pt), osmium (Os), rhenium (Re), chromium (Cr), rhodium (Rh), copper (Cu), palladium (Pd), bismuth (Bi), molybdenum (Mo), hafnium (Hf), niobium (Nb), iridium (Ir), gold (Au), silver (Ag), titanium (Ti), vanadium (V) and manganese (Mn), the thickness of the alloy is 0.02-2 nm, and the first spacing layer and the second spacing layer are either the same in thickness or different in thickness and are made of different materials.
4. A multilayer film having dual spacer layers and capable of forming a ferromagnetic or antiferromagnetic coupling as claimed in claim 1 wherein: the upper and lower deposition structures which are provided with double spacing layers and can form a ferromagnetic or antiferromagnetic coupling multilayer film are oxide barrier layers, non-ferromagnetic metals or metal alloys; the multilayer film with double spacer layers and capable of forming ferromagnetic or antiferromagnetic coupling is used as free layer, reference layer and pinning layer in magnetic tunnel junction; when the structure is an oxide barrier layer, the material is one or a combination of several of magnesium oxide, aluminum oxide, magnesium aluminum oxide, hafnium oxide and tantalum oxide, and the thickness is 0.2-5 nm; when the structure is non-ferromagnetic metal or metal alloy, the material is one or a combination of Ta, Ru, W, Pt, Pd, Bi, Mo, Hf, Nb, Ir, Os, Re, Cr, Rh and Cu, and the thickness is 0.1-100 nm.
5. A multilayer film having dual spacer layers and capable of forming a ferromagnetic or antiferromagnetic coupling as claimed in claim 1 wherein: the common element of the CoFeB is matchedRatio is Co20Fe60B20、Co40Fe40B20Or Co60Fe20B20Where the numbers represent percentages of the elements.
6. A multilayer film having dual spacer layers and capable of forming a ferromagnetic or antiferromagnetic coupling as claimed in claim 1 wherein: the common element proportion of the FeB is Fe80B20Where the numbers represent percentages of the elements.
7. A multilayer film having dual spacer layers and capable of forming a ferromagnetic or antiferromagnetic coupling as claimed in claim 1 wherein: the common element proportion of CoFe is Co50Fe50, Co20Fe80 and Co80Fe20, and the numbers represent the percentage of the elements.
8. A multilayer film having dual spacer layers and capable of forming a ferromagnetic or antiferromagnetic coupling as claimed in claim 1 wherein: the Heusler alloy is a cobalt-iron-aluminum (Co2FeAl) material and a cobalt-manganese-silicon (Co2MnSi) material, and the element types and element proportions in the material can be changed.
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| CN111613720B (en) * | 2019-02-25 | 2022-09-09 | 上海磁宇信息科技有限公司 | Magnetic random access memory storage unit and magnetic random access memory |
| CN112310271B (en) * | 2019-07-25 | 2023-04-07 | 上海磁宇信息科技有限公司 | Magnetic tunnel junction structure of magnetic random access memory |
| CN112490353A (en) * | 2019-09-11 | 2021-03-12 | 上海磁宇信息科技有限公司 | Magnetic random access memory storage unit and magnetic random access memory |
| CN112736191A (en) * | 2019-10-14 | 2021-04-30 | 上海磁宇信息科技有限公司 | Magnetic tunnel junction structure with symmetrical structure and magnetic random access memory |
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| CN110797454B (en) * | 2019-11-06 | 2020-12-08 | 北京科技大学 | Ultrahigh anisotropy magnetoresistance film material and preparation method thereof |
| KR20210075405A (en) * | 2019-12-13 | 2021-06-23 | 에스케이하이닉스 주식회사 | Electronic device |
| CN113140670A (en) * | 2020-01-16 | 2021-07-20 | 上海磁宇信息科技有限公司 | Magnetic tunnel junction vertical antiferromagnetic layer and random access memory |
| CN111640858A (en) * | 2020-04-26 | 2020-09-08 | 北京航空航天大学 | Magnetic tunnel junction reference layer, magnetic tunnel junction and magnetic random access memory |
| CN116114402A (en) * | 2020-10-26 | 2023-05-12 | 华为技术有限公司 | Magnetic tunnel junction, magnetoresistive random access memory and electronic device |
| US11538987B2 (en) | 2020-11-20 | 2022-12-27 | Samsung Electronics Co., Ltd. | IrAl as a non-magnetic spacer layer for formation of synthetic anti-ferromagnets (SAF) with Heusler compounds |
| US11751486B2 (en) | 2020-11-20 | 2023-09-05 | Samsung Electronics Co., Ltd. | Templating layers for perpendicularly magnetized Heusler films/compounds |
| US11804321B2 (en) | 2020-11-20 | 2023-10-31 | Samsung Electronics Co., Ltd. | Tunable templating layers for perpendicularly magnetized Heusler films |
| CN114551716A (en) * | 2020-11-26 | 2022-05-27 | 浙江驰拓科技有限公司 | Magnetic tunnel junction free layer and magnetic tunnel junction structure with same |
| CN113437210B (en) * | 2021-06-24 | 2023-04-07 | 杭州电子科技大学 | Current regulation and control magnetic random access memory based on spin orbit torque |
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