CN107395151B - Piezoresistive gold-silicon composite nano beam resonator and manufacturing method thereof - Google Patents

Piezoresistive gold-silicon composite nano beam resonator and manufacturing method thereof Download PDF

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CN107395151B
CN107395151B CN201710425764.9A CN201710425764A CN107395151B CN 107395151 B CN107395151 B CN 107395151B CN 201710425764 A CN201710425764 A CN 201710425764A CN 107395151 B CN107395151 B CN 107395151B
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于虹
赵蕴阳
张悦
葛海峰
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/0072—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks of microelectro-mechanical resonators or networks
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    • B81—MICROSTRUCTURAL TECHNOLOGY
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    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
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    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
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    • B81C1/0015—Cantilevers
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    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
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Abstract

The invention discloses a piezoresistive gold-silicon composite nano-beam resonator and a manufacturing method thereof, wherein the resonator comprises a gold-silicon composite nano-beam with two fixed ends, a matching resistor (7), a first aluminum electrode (8), a second aluminum electrode (9), a third aluminum electrode (10), a gold electrode (11) and a fourth aluminum electrode (12), wherein the first aluminum electrode, the second aluminum electrode and the third aluminum electrode are used for leading out a piezoresistive region and the matching resistor on the gold-silicon composite nano-beam; the layered structure is as follows: the silicon nitride substrate is characterized in that oxidation sacrificial layers (2) are arranged on two sides of the substrate (1) respectively, monocrystalline silicon (3) is arranged on the oxidation sacrificial layers (2), a piezoresistive region (4) is arranged on one side of the monocrystalline silicon (3), a silicon nitride insulating layer (5) is arranged on the upper portions of the monocrystalline silicon (3) and the piezoresistive region (4), and a gold layer (6) is arranged on the silicon nitride insulating layer (5). The invention has simple manufacturing process, and reduces the cost as much as possible on the basis of manufacturing the small-size beam; the excitation and detection method is simple, complex equipment is not needed, and the coupling between detection and excitation is small; effectively enhancing the piezoresistive effect and reducing the detection difficulty.

Description

Piezoresistive gold-silicon composite nano beam resonator and manufacturing method thereof
Field of the invention
The invention relates to a piezoresistive gold-silicon composite nano beam resonator, and belongs to the technical field of nano sensors.
Background
The silicon Nano beam is a typical application structure of a Nano Electromechanical System (NEMS), and due to the fact that the self mass of the structure is extremely tiny, the resonance frequency of a manufactured resonator can reach GHz, and the quality factor can also reach 105The sensor has ultrahigh mechanical sensitivity and simultaneously meets the development trend of low power consumption at present. The excellent performances enable the nano beam to have good application prospects in the aspects of ultra-high sensitive quality detection, ultra-small force and ultra-small displacement detection, biochemical sensing and the like. However, due to the small size of the device, it is difficult to process a complex structure like a micro-resonator to enhance some performance of the device, and only a simpler structure is used to realize the complex structure. Too small a dimension also presents a greater challenge to the excitation and detection of the nanobeams, since small dimensions mean that the measurement is performedThe signal is weak and is easily submerged by background noise, and the coupling between the detected signal and the excitation signal also easily influences the detection. In order to realize wide application of the nano beam resonator, the excitation and detection method must also have the characteristics of low cost, miniaturization, real-time performance and the like. The existing excitation and detection methods, such as the electromagnetic excitation and detection method, need a strong magnetic field environment, increase the circuit burden, and make the experimental equipment become bulky and expensive; the laser excitation and laser parameter amplification detection method needs a large-scale optical instrument, and can quickly reach the limit of optical detection resolution along with the further reduction of the size of a nanometer device; in addition, a common electrostatic excitation and piezoresistive detection method is adopted, and a piezoresistive region is used as a detection signal output end and also used as an excitation electrode, so that excitation and detection coupling is very large, and a detected signal is easily submerged.
Disclosure of Invention
The technical problem is as follows: the invention aims to provide a piezoresistive gold-silicon composite nano-beam resonator with simple structure and simple manufacturing process and a manufacturing method thereof, which are suitable for electrostatic driving and piezoresistive detection, can eliminate coupling between excitation and detection signals and simultaneously enhance the output of piezoresistive signals.
The technical scheme is as follows: the piezoresistive gold-silicon composite nano beam resonator comprises a gold-silicon composite nano beam with two fixed ends, a matching resistor, a first aluminum electrode, a second aluminum electrode, a third aluminum electrode, a gold electrode and a fourth aluminum electrode, wherein the first aluminum electrode, the second aluminum electrode and the third aluminum electrode are used for leading out a piezoresistive region on the gold-silicon composite nano beam and the matching resistor; the layered structure is as follows: the two sides of the substrate are respectively provided with an oxidation sacrificial layer, the oxidation sacrificial layer is provided with monocrystalline silicon, one side of the monocrystalline silicon is provided with a piezoresistive region, the upper parts of the monocrystalline silicon and the piezoresistive region are provided with a silicon nitride insulating layer, and the silicon nitride insulating layer is provided with a gold layer.
Wherein:
the gold-silicon composite nano beam is characterized in that the main body of the gold-silicon composite nano beam is monocrystalline silicon, a piezoresistive region which is identical to a matched resistor is generated on the gold-silicon composite nano beam at a position close to an anchor region through ion implantation, a gold layer is sputtered on the top layer of the nano beam, and a thin silicon nitride insulating layer is arranged between the gold layer and the monocrystalline silicon.
One end of the gold-silicon composite nano beam main body is connected with a gold electrode, and the other end of the gold-silicon composite nano beam main body is respectively connected with a first aluminum electrode and a second aluminum electrode.
One end of the matching resistor is connected with the second aluminum electrode, and the other end of the matching resistor is connected with the third aluminum electrode.
The gold-silicon composite nano beam is H-shaped, and four legs are thin, so that the stress concentration effect can be achieved, and the piezoresistive effect is more obvious.
The manufacturing method of the piezoresistive gold-silicon composite nano beam resonator is based on an SOI (silicon on insulator) process, combines mask lithography and electron beam lithography, and comprises the following steps of:
step 1: preparing an SOI silicon wafer;
step 2: sputtering chromium and gold to produce ion beam lithographic marks;
and step 3: an ion implantation area is drawn by electron beam lithography, and the ion implantation generates a piezoresistive area and a matching resistor;
and 4, step 4: growing a layer of SiO on gold2Protective layer, rapid thermal annealing, and SiO removal2A layer;
and 5: depositing a layer of silicon nitride on the nano beam as an insulating layer;
step 6: photoetching a gold electrode area by using a mask, and sputtering chromium and gold;
and 7: the beam area is drawn by electron beam light, and is plated with chromium and gold;
and 8: etching the areas to be excavated on the two sides of the beam by using electron beams, and etching silicon nitride and monocrystalline silicon;
and step 9: photoetching the area of the aluminum pad by using a mask, and etching away silicon nitride;
step 10: firstly, cleaning impurities and oxides in the through hole, sputtering aluminum, and then removing the photoresist;
step 11: photoetching an area of the aluminum pad by using a mask, wherein the area is larger than the area carved at the last time, and sputtering gold to completely wrap the aluminum;
step 12: and removing the oxidation sacrificial layer below the beam by wet etching, and releasing the beam to suspend the beam structure.
The piezoresistive gold-silicon composite nano beam resonator is suitable for electrostatic excitation and piezoresistive detection methods, a gold layer and a substrate of the beam are respectively an upper polar plate and a lower polar plate of electrostatic excitation, and the nano beam can vibrate by adding an alternating signal. The piezoresistive region of the beam is connected with the matching resistor in series, alternating current signals with opposite phases are applied to two ends of the beam to serve as bias signals, and the middle voltage serves as a detected output signal. When the beam is static, the resistance values of the piezoresistive region resistor and the matching resistor are equal, and the output voltage is zero; when the beam resonates, the piezoresistive region resistor generates the fluctuation with the same frequency as the resonant frequency of the nanometer beam due to the piezoresistive effect, and the resistance value is
Figure BDA0001316114160000021
Finally, the reaction is carried out to the output voltage,
Figure BDA0001316114160000022
the thinner the four legs of the beam, the more obvious the stress concentration effect, but the thinner the legs of the beam also represent the thinner the piezoresistive region, and the larger the static resistance, the larger the background noise during detection, so the four legs of the H-shaped structure cannot be too thin, and a proper value needs to be selected.
Has the advantages that: the gold-silicon composite nano beam resonator realizes stronger piezoresistive effect than a double-end clamped beam by utilizing a simple H-shaped structure. The piezoresistive. In the manufacturing process, mask lithography and electron beam lithography are combined, the electron beam lithography is used in the key step to manufacture the beam with the extremely small size, and mask lithography is used in other steps to reduce the cost as much as possible.
Drawings
Fig. 1 is a cross-sectional view of a gold silicon composite nanobeam in the present invention.
Fig. 2 is a top view of the gold silicon composite nanobeam in the present invention.
Fig. 3 is a general schematic diagram of a nanobeam resonator of the present invention.
FIG. 4 is a schematic of piezoresistive detection.
Figure 5 is a graph comparing piezoresistive region stress for a clamped-clamped beam and two H-beams.
The figure shows that: the structure comprises a substrate 1, an oxidation sacrificial layer 2, monocrystalline silicon 3, a piezoresistive region 4, a silicon nitride insulating layer 5, a gold layer 6, a matching resistor 7, a first aluminum electrode 8, a second aluminum electrode 9, a third aluminum electrode 10, a gold electrode 11 and a fourth aluminum electrode 12.
Detailed Description
The invention relates to a gold-silicon composite nano beam resonator, which comprises a gold-silicon composite nano beam with two fixed ends, a matching resistor, an aluminum electrode, a gold electrode and an aluminum electrode, wherein the aluminum electrode is used for leading out a piezoresistive region and the matching resistor on the nano beam, the gold electrode is connected with a gold layer on the top of the nano beam, and the aluminum electrode is connected with a substrate. The manufacturing process of the structure is based on a Silicon On Insulator (SOI) process, and mask lithography and electron beam lithography are combined. The matching resistor is generated by ion implantation, the main body of the nano beam is monocrystalline silicon, a piezoresistive region which is completely the same as the matching resistor is arranged on the nano beam close to the anchor region, a layer of gold is sputtered on the top layer of the nano beam, and a thin silicon nitride insulating layer is arranged between the gold and the silicon. The shape of the nano beam is H-shaped, four legs are thin, the effect of stress concentration can be achieved, and the piezoresistive effect is more obvious.
The structure is suitable for electrostatic excitation and piezoresistive detection methods, a gold layer and a substrate of the beam are respectively an upper polar plate and a lower polar plate of electrostatic excitation, and the nano beam can vibrate by adding an alternating current signal. The piezoresistive region of the beam is connected with the matching resistor in series, alternating current signals with opposite phases are applied to two ends of the beam to serve as bias signals, and the middle voltage serves as a detected output signal. When the beam is static, the resistance values of the piezoresistive region resistor and the matching resistor are equal, and the output voltage is zero; when the beam resonates, the piezoresistive region resistance generates fluctuation with the same frequency as the resonant frequency of the nano beam due to piezoresistive effect, and finally the fluctuation is reflected to the output voltage.
The invention will be further explained with reference to the drawings.
Referring to fig. 1, 2 and 3, the present invention uses SOI silicon wafer as raw material, top layer single crystal silicon is the main material of nano beam, ion implantation generates piezoresistive region and matching resistance on single crystal silicon, a layer of gold is sputtered on the top layer of beam, gold and substrate are used as two electrodes of electrostatic driving, and a silicon nitride insulating layer exists between gold and piezoresistive region.
Pads 8 and 9 are connected across the piezoresistive region and pads 9 and 10 are connected across the matching resistor, these 3 pads connecting the piezoresistive region and the matching resistor in series, forming a circuit structure as shown in FIG. 4, where R isdTo match the resistance, RcAre piezoresistive regions. The basic principle of piezoresistive detection is to apply a bias voltage V with opposite phasesband-VbApplied to both ends of the series structure, R when the beam is stationaryd＝R0When the beam is at resonant frequency ω0Upon vibration, the resistance of the piezoresistive region becomes
Figure BDA0001316114160000041
The output voltage measured is
Figure BDA0001316114160000042
In actual detection, the output voltage can be measured after being filtered and amplified.
According to the basic principle of piezoresistive effect
Figure BDA0001316114160000043
Wherein G is piezoresistive strain coefficient, epsilonrThe piezoresistive strain coefficient is determined by the material characteristics, temperature and other reasons for the strain in the long axis direction of the nano beam, so the rate of change and the strain of the resistance are in direct proportion. The nano beam is H-shaped, and the stress concentration effect can be realized. As shown in FIG. 5, the piezoresistive region stress distribution diagrams of the double-end clamped beam and 2H-shaped beams are obtained by simulation of ANSYS software, the dimensions of the three simulated nano beams are 10 μm in length, 1.5 μm in width and 200 μm in thickness, and the width of each foot of the first H-shaped beam is fourThe degree is 0.6 μm and the width of the four legs of the first H-beam is 0.3 μm. The same force of 1 mu N is applied to the central points of the upper surfaces of the three beams, stress is extracted along the dotted lines on the three beams, the stress of the piezoresistive regions of the three beams is increased progressively, and the average stress values are 42.412MPa, 49.054MPa and 62.804MPa respectively. The thinner the four legs of the beam, the more obvious the stress concentration effect, but the thinner the legs also represent the thinner the piezoresistive region, and the larger the static resistance, the larger the background noise during detection, so the four legs of the H-shaped structure cannot be too thin, and a proper value needs to be selected.
The manufacturing process of the structure is based on an SOI process, mask lithography and electron beam lithography are combined, and the specific process is as follows:
step (a): an SOI silicon wafer with a P-type (100) crystal face is selected, the surface silicon thickness is 200nm, the resistivity is more than 1000 omega cm, the thickness of a middle silicon dioxide insulating layer is 400nm, and the substrate silicon thickness is about 480 mu m. The process involves electron beam lithography, so the wafer is first cut into 2cm by 2cm squares.
Step (b): chromium and gold are deposited on the surface of the silicon wafer through magnetron sputtering, the thickness of the chromium is only 10nm, and the effect is to increase the adhesion of the gold and the silicon. And then, making a mark of ion beam lithography by mask lithography, Reactive Ion (RIE) etching and photoresist stripping.
Step (c): the ion implanted regions are drawn by electron beam lithography. The ion implantation creates piezoresistive regions and matching resistors, the theoretical junction depth being 1/3 the thickness of silicon. The stresses above and below the neutral plane of the beam are opposite, one is tensile and the other must be compressive, the piezoresistive effects cancel each other out, and annealing after ion implantation causes further diffusion of ions, so to ensure that the actual depth of the piezoresistive region does not exceed the neutral plane of the beam, the junction depth is set to 60 nm.
Step (d): growing a layer of SiO on gold2Protecting layer, performing rapid thermal annealing for 30s to rebuild damaged crystal lattice during doping process, activating doping ions, and removing SiO2And (3) a layer.
A step (e): silicon nitride was grown as an insulating layer on the piezoresistive regions by Plasma Enhanced Chemical Vapor Deposition (PECVD) to a thickness of 30 nm.
Step (f): and photoetching and drawing the area of the gold electrode by using a mask, sputtering 10nm of chromium and 60nm of gold on a silicon wafer by using magnetron sputtering, and stripping the photoresist to only reserve the chromium and the gold in the area of the gold electrode.
Step (g): and (3) etching the area of the beam needing to deposit the gold layer by using electron beams, plating 10nm of chromium and 60nm of gold on the surface of the beam by using electron beam evaporation, and then stripping the photoresist. Magnetron sputtering is not used here because the photoresist for electron beam lithography is thinner than that for mask lithography, and if metal is plated by magnetron sputtering, it may fail at the time of the next step of lift-off.
A step (h): the areas to be excavated on both sides of the beam are photoetched by electron beams, and 30nm of silicon nitride and 200nm of silicon on both sides of the beam are etched away.
Step (i): and photoetching the area of the aluminum pad by using a mask, and etching away the silicon nitride in the area of the aluminum pad.
Step (j): firstly, impurities and oxides in the through hole are cleaned by back sputtering, then 40nm of aluminum is subjected to magnetron sputtering, and then the photoresist is removed.
Step (k): and photoetching an area of the aluminum pad by using a mask, wherein the area is larger than the area engraved at the last time, and carrying out magnetron sputtering on 60nm gold to completely wrap the aluminum.
Step (l): and removing the oxidation sacrificial layer below the beam by wet etching, and releasing the beam to suspend the beam structure.

Claims (5)

1. The piezoresistive gold-silicon composite nano beam resonator is characterized by comprising a gold-silicon composite nano beam with two fixed ends, a matching resistor (7), a first aluminum electrode (8) led out of a piezoresistive region on the gold-silicon composite nano beam, a second aluminum electrode (9) led out of the piezoresistive region and the matching resistor on the gold-silicon composite nano beam, a third aluminum electrode (10) led out of the matching resistor on the gold-silicon composite nano beam, a gold electrode (11) connected with a gold layer on the top of the gold-silicon composite nano beam, and a fourth aluminum electrode (12) connected with a substrate; the layered structure is as follows: the silicon nitride wafer is characterized in that oxidation sacrificial layers (2) are respectively arranged on two sides of a substrate (1), monocrystalline silicon (3) is arranged on the oxidation sacrificial layers (2), a piezoresistive region (4) is arranged on one side of the monocrystalline silicon (3), a silicon nitride insulating layer (5) is arranged on the upper portions of the monocrystalline silicon (3) and the piezoresistive region (4), and a gold layer (6) is arranged on the silicon nitride insulating layer (5);
the gold-silicon composite nano beam is H-shaped, a piezoresistive region of the beam is connected with a matching resistor in series, alternating current signals with opposite phases are applied to two ends of the beam to serve as bias signals, and the middle voltage serves as a detected output signal.
2. The piezoresistive gold-silicon composite nanobeam resonator according to claim 1, wherein the gold-silicon composite nanobeam body is single crystal silicon (3), a piezoresistive region (4) identical to the matching resistance is generated on the gold-silicon composite nanobeam close to the anchor region by ion implantation, a gold layer (6) is sputtered on the top layer of the nanobeam, and a silicon nitride insulating layer (5) is arranged between the gold layer (6) and the single crystal silicon (3).
3. The piezoresistive gold-silicon composite nanobeam resonator according to claim 1, wherein one end of the gold-silicon composite nanobeam body is connected to a gold electrode (11), and the other end is connected to a first aluminum electrode (8) and a second aluminum electrode (9), respectively.
4. The piezoresistive gold-silicon composite nanobeam resonator according to claim 1, wherein said matching resistor (7) has one end connected to the second aluminum electrode (9) and the other end connected to the third aluminum electrode (10).
5. The method for manufacturing the piezoresistive gold-silicon composite nanobeam resonator according to claim 1, wherein the steps of combining mask lithography and electron beam lithography based on SOI technology are as follows:
step 1: preparing an SOI silicon wafer;
step 2: sputtering chromium and gold to produce ion beam lithographic marks;
and step 3: an ion implantation area is drawn by electron beam lithography, and the ion implantation generates a piezoresistive area and a matching resistor;
and 4, step 4: growing a layer of SiO on gold2Protective layer, rapid thermal annealing, and SiO removal2A layer;
and 5: depositing a layer of silicon nitride on the nano beam as an insulating layer;
step 6: photoetching a gold electrode area by using a mask, and sputtering chromium and gold;
and 7: the beam area is drawn by electron beam light, and is plated with chromium and gold;
and 8: etching the areas to be excavated on the two sides of the beam by using electron beams, and etching silicon nitride and monocrystalline silicon;
and step 9: photoetching the area of the aluminum pad by using a mask, and etching away silicon nitride;
step 10: firstly, cleaning impurities and oxides in the through hole, sputtering aluminum, and then removing the photoresist;
step 11: photoetching an area of the aluminum pad by using a mask, wherein the area is larger than the area carved at the last time, and sputtering gold to completely wrap the aluminum;
step 12: and removing the oxidation sacrificial layer below the beam by wet etching, and releasing the beam to suspend the beam structure.
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CN1625047A (en) * 2004-12-01 2005-06-08 浙江大学 Nano beam resonator with piezo-resistance made by sacrificial layer corrosion technology
CN101103515A (en) * 2005-01-07 2008-01-09 波士顿大学托管委员会 Nanomechanical oscillator

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