CN107369612A - A kind of manufacture method of chip - Google Patents
A kind of manufacture method of chip Download PDFInfo
- Publication number
- CN107369612A CN107369612A CN201710575010.1A CN201710575010A CN107369612A CN 107369612 A CN107369612 A CN 107369612A CN 201710575010 A CN201710575010 A CN 201710575010A CN 107369612 A CN107369612 A CN 107369612A
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- CN
- China
- Prior art keywords
- substrate
- chip
- heat dissipating
- layer
- metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
The invention discloses a kind of manufacture method of chip, the chip includes substrate, it is characterised in that：The substrate lower end is provided with heat dissipating layer, the heat dissipating layer is integrally formed with the substrate, the heat dissipating layer is connected with the substrate by several contiguous blocks, several metal levels are provided with the substrate, passivation layer is being provided with described in the superiors on metal level, the procedure of processing of the chip includes processing wafer, and upper surface of base plate is aoxidized, metal sputtering, coating photoresistance, etching and photoresistance remove, and applies passivation layer, detection, encapsulation.The present invention is reasonable in design, and step is simple, and the chip cooling effect produced is good, service life length.
Description
Technical field
The present invention relates to chip fabrication techniques, specifically a kind of manufacture method of chip.
Background technology
Chip cooling effect of the prior art is poor, and temperature is too high to be caused to damage to electronic component, often because
Electronic component damages and makes electronic device be frequently necessary to repair, and existing chip production process is difficult that the chip for making to produce has
Good radiating effect.
The content of the invention
In order to solve the above problems, the invention provides a kind of manufacturer for the chip that can produce good heat dissipation effect
Method.
In order to achieve the above object, the present invention is achieved through the following technical solutions：
The present invention is a kind of manufacture method of chip, and chip includes substrate, and substrate lower end is provided with heat dissipating layer, heat dissipating layer and base
Plate is integrally formed, and heat dissipating layer is connected with substrate by several contiguous blocks, and several metal levels are provided with substrate, in the superiors' gold
Passivation layer is provided with category layer, the procedure of processing of chip is as follows；
1 selection wafer board, is cleaned and is dried to wafer board；
2 pairs of dried wafer boards are fixed, and are cut by laser cutting device, wafer board is divided into heat dissipating layer and base
Plate, several contiguous blocks are formed between heat dissipating layer and substrate；
3 will stand 10-30s in the wafer board immersion nanometer heat radiation coating obtained by step 2, take out drying；
The upper surface of base plate sprinkling acetone 1-2min of the wafer board of gained in step 3 is put into water and cleaned by 4, is dried；
5 pairs of upper surface of base plate aoxidize, and line number of going forward side by side minor metal sputter, coating photoresistance, etching and photoresistance remove, and make on substrate
Surface forms at least 3 layers of metal level, and topmost metal layer does not do coating photoresistance, etching and photoresistance and removes technique；
6 apply passivation layer in topmost metal layer；
7 are detected, and detect qualified post package.
1st, further improvement of the present invention is：The temperature dried in step 4 is 180 DEG C, drying time 4-5min.
Further improvement of the present invention is：Topmost metal layer is with orlop metal level than other metal thickness.
The beneficial effects of the invention are as follows：The present invention scribbles a nanometer heat radiation coating on chip makes heat caused by chip quick
Disperse, heat dissipating layer makes chip overall by contiguous block connection between substrate and air contact area increases, and strengthens radiating effect.
The present invention is reasonable in design, and step is simple, and the chip cooling effect produced is good, service life length.
Brief description of the drawings
Fig. 1 is schematic structural view of the invention.
Wherein：1- heat sinks, 2- substrates, 3- contiguous blocks, 4- layer metal levels, 5- passivation layers.
Embodiment
In order to strengthen the understanding of the present invention, present invention work is further retouched in detail below in conjunction with drawings and examples
State, the embodiment is only used for explaining the present invention, and protection scope of the present invention is not formed and limited.
As shown in figure 1, the present invention is a kind of manufacture method of chip, chip includes substrate 1, is provided with the lower end of substrate 1
Heat dissipating layer 2, heat dissipating layer 2 are integrally formed with substrate 1, and heat dissipating layer 2 is connected with substrate 1 by several contiguous blocks 3, is set on substrate 1
Several metal levels 4 are equipped with, passivation layer 5 is provided with topmost metal layer 4, the procedure of processing of chip is as follows；
1 selection wafer board, is cleaned and is dried to wafer board；
2 pairs of dried wafer boards are fixed, and are cut by laser cutting device, wafer board is divided into heat dissipating layer and base
Plate, several contiguous blocks are formed between heat dissipating layer and substrate；
3 will stand 10-30s in the wafer board immersion nanometer heat radiation coating obtained by step 2, take out drying；
The upper surface of base plate sprinkling acetone 1-2min of the wafer board of gained in step 3 is put into water and cleaned by 4, is dried；
5 pairs of upper surface of base plate aoxidize, and line number of going forward side by side minor metal sputter, coating photoresistance, etching and photoresistance remove, and make on substrate
Surface forms at least 3 layers of metal level, and topmost metal layer does not do coating photoresistance, etching and photoresistance and removes technique；
6 apply passivation layer in topmost metal layer；
7 are detected, and detect qualified post package；The temperature dried in step 4 is 180 DEG C, drying time 4-5min, the superiors
Metal level 4 and orlop metal level 4 are thicker than other metal levels 4.
The present invention is reasonable in design, and step is simple, and the chip cooling effect produced is good, service life length.
Claims (3)
1. a kind of manufacture method of chip, the chip includes substrate（1）, it is characterised in that：In the substrate（1）Lower end is set
There is heat dissipating layer（2）, the heat dissipating layer（2）With the substrate（1）It is integrally formed, the heat dissipating layer（2）With the substrate（1）Pass through
Several contiguous blocks（3）It is connected, in the substrate（1）On be provided with several metal levels（4）, in metal level described in the superiors（4）On
It is provided with passivation layer（5）, the procedure of processing of the chip is as follows；
（1）Wafer board is selected, wafer board is cleaned and dried；
（2）Dried wafer board is fixed, cut by laser cutting device, make wafer board be divided into heat dissipating layer and
Substrate, several contiguous blocks are formed between heat dissipating layer and substrate；
（3）Wafer board obtained by step 2 is immersed in nanometer heat radiation coating and stands 10-30s, takes out drying；
（4）The upper surface of base plate sprinkling acetone 1-2min of the wafer board of gained in step 3 is put into water and cleaned, is dried；
（5）Upper surface of base plate is aoxidized, line number of going forward side by side minor metal sputter, coating photoresistance, etching and photoresistance remove, and make substrate
Upper surface forms at least 3 layers of metal level, and topmost metal layer does not do coating photoresistance, etching and photoresistance and removes technique；
（6）Passivation layer is applied in topmost metal layer；
（7）Detected, detect qualified post package.
A kind of 2. manufacture method of chip according to claim 1, it is characterised in that：Dry temperature is in the step 4
180 DEG C, drying time 4-5min.
A kind of 3. manufacture method of chip according to claim 1, it is characterised in that：Metal level described in the superiors（4）With most
Lower metal layer（4）Than metal level other described（4）It is thick.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710575010.1A CN107369612A (en) | 2017-07-14 | 2017-07-14 | A kind of manufacture method of chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710575010.1A CN107369612A (en) | 2017-07-14 | 2017-07-14 | A kind of manufacture method of chip |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107369612A true CN107369612A (en) | 2017-11-21 |
Family
ID=60307328
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710575010.1A Pending CN107369612A (en) | 2017-07-14 | 2017-07-14 | A kind of manufacture method of chip |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107369612A (en) |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1308373A (en) * | 2000-02-11 | 2001-08-15 | Abb半导体有限公司 | Heat dissipator for high-power semiconductor module |
| CN1929119A (en) * | 2005-09-09 | 2007-03-14 | 日本碍子株式会社 | Heat spreader module and method of manufacturing same |
| CN101287334A (en) * | 2007-04-12 | 2008-10-15 | 环宇真空科技股份有限公司 | Manufacturing method of highly heat conductive circuit base board |
| CN201944626U (en) * | 2011-01-27 | 2011-08-24 | 广东宏泰照明科技有限公司 | LED (light-emitting diode) lamp with improved heat radiating device |
| CN102916094A (en) * | 2012-09-26 | 2013-02-06 | 施科特光电材料(昆山)有限公司 | Method for improving grinding quality of sapphire |
| CN103773121A (en) * | 2014-01-15 | 2014-05-07 | 芜湖市宝艺游乐科技设备有限公司 | Nano heat-dissipation paint |
| CN205026422U (en) * | 2015-10-12 | 2016-02-10 | 谷岩柏 | Compact light emitting diode (LED) energy -saving lamp |
| CN205244871U (en) * | 2015-11-30 | 2016-05-18 | 向素珍 | Novel heat dissipation LED (light -emitting diode) lamp |
| CN206234635U (en) * | 2016-11-19 | 2017-06-09 | 深圳市美景照明有限公司 | One kind expands heat-dissipating LED lamp |
-
2017
- 2017-07-14 CN CN201710575010.1A patent/CN107369612A/en active Pending
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1308373A (en) * | 2000-02-11 | 2001-08-15 | Abb半导体有限公司 | Heat dissipator for high-power semiconductor module |
| CN1929119A (en) * | 2005-09-09 | 2007-03-14 | 日本碍子株式会社 | Heat spreader module and method of manufacturing same |
| CN101287334A (en) * | 2007-04-12 | 2008-10-15 | 环宇真空科技股份有限公司 | Manufacturing method of highly heat conductive circuit base board |
| CN201944626U (en) * | 2011-01-27 | 2011-08-24 | 广东宏泰照明科技有限公司 | LED (light-emitting diode) lamp with improved heat radiating device |
| CN102916094A (en) * | 2012-09-26 | 2013-02-06 | 施科特光电材料(昆山)有限公司 | Method for improving grinding quality of sapphire |
| CN103773121A (en) * | 2014-01-15 | 2014-05-07 | 芜湖市宝艺游乐科技设备有限公司 | Nano heat-dissipation paint |
| CN205026422U (en) * | 2015-10-12 | 2016-02-10 | 谷岩柏 | Compact light emitting diode (LED) energy -saving lamp |
| CN205244871U (en) * | 2015-11-30 | 2016-05-18 | 向素珍 | Novel heat dissipation LED (light -emitting diode) lamp |
| CN206234635U (en) * | 2016-11-19 | 2017-06-09 | 深圳市美景照明有限公司 | One kind expands heat-dissipating LED lamp |
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Legal Events
| Date | Code | Title | Description |
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| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| CB02 | Change of applicant information |
Address after: 226600, Jiangsu province Nantong city Haian county old dam Town Industrial Park Applicant after: Jiangsu Ming core microelectronic Limited by Share Ltd Address before: 226600 Jiangsu city of Nantong province Haian County Binhai port old dam old dam District Town Industrial Park Applicant before: Nantong Mingxin Microelectronics Co., Ltd. |
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| CB02 | Change of applicant information | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20171121 |
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| RJ01 | Rejection of invention patent application after publication |