CN107293504A - It is bonded heating control apparatus and its method - Google Patents
It is bonded heating control apparatus and its method Download PDFInfo
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- CN107293504A CN107293504A CN201610200573.8A CN201610200573A CN107293504A CN 107293504 A CN107293504 A CN 107293504A CN 201610200573 A CN201610200573 A CN 201610200573A CN 107293504 A CN107293504 A CN 107293504A
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- heater
- heating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/03—Manufacturing methods
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- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
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Abstract
The invention provides one kind bonding heating control apparatus and its method, its device includes heating controller and two heaters and two heater drivers；Heater is used to silicon chip or sheet glass are carried out setting having heaters and at least two temperature sensors in heating pressurization, heater；Heating controller is used to realize the measurement to each temperature sensor in two heaters, exports the PWM apertures of heater；The PWM apertures that heater driver is exported according to the heating controller, driving heater work；Two heaters work and separate simultaneously, save the heat time, improve the efficiency of heating surface, and in the both sides up and down of heating dish, graphite flake is set respectively, so that temperature is uniformly propagated, while heating process is divided into three phases, the quick heating of through-rate heating period, shorten the heat time, improve yield；And realize that rate of heat addition stage power is adjustable, more technological parameters are provided for bonding technology.
Description
Technical field
The present invention relates to technical field of semiconductors, and in particular to one kind bonding heating control apparatus and its method.
Background technology
Two clean wafers of surfacing can be combined with each other by the chemical bond on surface under certain conditions
Get up, limited without the lattice by two kinds of wafer materials, crystal orientation, technology is referred to as wafer bonding skill in this
Art.There is the great free degree using bonding techniques combination made of new structural material, so being widely used in micro- electricity
Sub-circuit, sensor, power device, micromachined, opto-electronic device, insulating properties silicon wafer (SOI)
Deng field.Wafer bond techniques have become it is a kind of can be for making the technologies of many important opto-electronic devices.
The wafer of different materials can be combined together by wafer bond techniques.Wafer bonding is semiconductor devices
One important technique of Three-dimension process, no matter the wafer bonding of which species, the main technique of wafer bonding
Processing (cleaning, activation) of the step including crystal column surface, the alignment of wafer, and final wafer key
Close.By these processing steps, individual independent wafer is aligned, and is then bonded together, is realized it
Three-dimensional structure.Bonding is not only the encapsulation technology in microsystems technology, and is also during three-dimension device is manufactured
An organic part, device manufacture preceding road technique and postchannel process in have application.It is existing
It is silicon chip and the bonding of silicon chip and the bonding of silicon chip and glass substrate that the topmost bonding having, which is applied,.
The materials such as silicon chip, glass substrate are usually heated to certain by wafer bonding process under vacuum conditions
Temperature, applies certain pressure, and continue the regular hour, to be bonded., will in the technical process
The time that material is heated to assigned temperature accounts for 20% or so of whole technical process.Therefore, the heat time is shortened
Have a great impact to improving yield.In addition, during temperature-pressure, improving thermal-stable, reduce
Temperature oscillation, can reduce material deformation, improve bonding precision.
Therefore, how shortening the heat time and improving thermal-stable is to need solution badly during wafer bonding
Certainly the problem of.
The content of the invention
It is an object of the invention to provide one kind bonding heating control apparatus and its method, solve in the prior art
Heat time is long and heats unstable, the problem of heating-up temperature is shaken.
In order to achieve the above objects and other related objects, the present invention provides a kind of bonding heating control apparatus, bag
Include heating controller and two heaters and two heater drivers；
The heater is used to silicon chip or sheet glass be provided with heating pressurization, the heater
Heater and at least two temperature sensors；
The heating controller is used to realize the measurement to each temperature sensor in described two heaters, point
Not Shu Chu heater PWM apertures；
The PWM apertures that the heater driver is exported according to the heating controller, drive the heater
Work.
Optionally, in addition to man-machine interface, the man-machine interface is used to set device parameter, to start or stop
Only bonding technology.
Optionally, described device constant includes：Heater PWM apertures setting value, the rate of heat addition and heater
Ratio, the pid parameter of PWM aperture setting values.
Optionally, the heater includes successively in order：Platen, the first graphite flake, heating dish,
Two graphite flakes, ceramic disk and base.
Optionally, it is provided with electric heater in the heating dish.
Optionally, between the platen and first graphite flake and the heater and second graphite
Temperature sensor is provided between piece.
The present invention also provides a kind of bonding method for heating and controlling, comprises the following steps：
Step S01：The temperature of temperature sensor in heating controller measurement heater, exports the heating dress
Put the PWM apertures of middle heater；
Step S02：The PWM apertures that heater driver is exported according to the heating controller, driving is described
Heater works；
Step S03：The heater carries out heating pressurization to silicon chip or sheet glass.
Optionally, the heating controller exports the PWM apertures of heater in two heaters, two respectively
Individual heater driver drives two heater work respectively, and described two heaters work but mutual simultaneously
It is independent.
Optionally, according to the size of the heter temperature deviation, by the heating process of the heater point
For three phases：Speed heating period, temperature coarse tuning stage and temperature accurate adjustment stage.
Optionally, in the speed heating period, the rate of heat addition is gone out according to experimental calculation and opened with heater PWM
The ratio of setting value is spent, is set as the constant of bonding computer heating control.
Optionally, in the temperature coarse tuning stage, using pid control algorithm, by pid parameter, heater
PWM aperture setting value clipping ranges are set as the constant of bonding computer heating control.
Optionally, in the temperature accurate adjustment stage, using pid control algorithm, by pid parameter, heater
PWM aperture setting value clipping ranges are set as the constant of bonding computer heating control.
Compared with prior art, it is provided by the present invention a kind of to be bonded the beneficial of heating control apparatus and its method
Effect is as follows：
1st, the bonding heating control apparatus that the present invention is provided, is measured in two heaters by heating controller
The temperature of each temperature sensor, exports the PWM apertures of heater in two heaters, two heating respectively
Two PWM apertures that drive device is exported according to the heating controller respectively, drive two heater works
Make, two heaters carry out heating pressurization to silicon chip or sheet glass respectively, so that two heaters
Work simultaneously and separate, save the heat time, improve the efficiency of heating surface；
2nd, the heater that the present invention is provided, graphite flake is set in the both sides up and down of heating dish respectively so that temperature
Degree is uniform to be propagated；Platen temperature sensor is set between platen and the first graphite flake, in heating dish and second
Heating dish temperature sensor is set between graphite flake, and it is feedback control point to choose heating dish temperature sensor, can
With the output of quick response heater, it is technological evaluation point to choose platen temperature sensor, can realize technique
The smooth output of temperature, is not influenceed by computer heating control oscillation effect in flow, improves bonding precision；
3rd, the bonding method for heating and controlling that the present invention is provided, is divided into three phases by the heating process of heater,
The quick heating of through-rate heating period, shortens the heat time, yield is improved, while passing through temperature coarse adjustment
Stage and temperature accurate adjustment stage, computer heating control oscillation effect is reduced, heating effect is improved；And it is real
Existing rate of heat addition stage power is adjustable, and more technological parameters are provided for bonding technology.
Brief description of the drawings
The structural representation for the heater that Fig. 1 is provided by one embodiment of the invention.
The structural representation for the bonding heating control apparatus that Fig. 2 is provided by one embodiment of the invention.
The flow chart for the bonding method for heating and controlling that Fig. 3 is provided by one embodiment of the invention.
The graph of a relation of temperature and time in the bonding method for heating and controlling that Fig. 4 is provided by one embodiment of the invention.
The heating control algorithms flow that Fig. 5 is provided by one embodiment of the invention.
Embodiment
To make present disclosure more clear understandable, below in conjunction with Figure of description, to present disclosure
It is described further.Certainly the invention is not limited in the specific embodiment, those skilled in the art institute is ripe
The general replacement known is also covered by within the scope of the present invention.
Secondly, the present invention has carried out detailed statement using schematic diagram, when present example is described in detail, in order to
It is easy to explanation, schematic diagram, should not be to this restriction as the present invention not according to general ratio partial enlargement.
The present invention core concept be：Each temperature sensor in two heaters is measured by heating controller
Temperature, the PWM apertures of heater in two heaters, two heater drivers difference are exported respectively
The two PWM apertures exported according to the heating controller, two heater work of driving, two heating dresses
Put and heating pressurization is carried out to silicon chip or sheet glass respectively, so that two heaters work and phase simultaneously
It is mutually independent, the heat time is saved, the efficiency of heating surface is improved.
Fig. 1 is refer to, the structural representation of its heater provided by one embodiment of the invention.Such as Fig. 1
Shown, the heater 10 includes successively in order：Platen 11, the first graphite flake 12, heating dish 13,
Second graphite flake 14, ceramic disk 15 and base 16.The platen 11 is used for para-linkage silicon chip, sheet glass
Uniform surface contact pressure is carried out Deng material, first graphite flake 12 realizes the heating dish 13 and the pressure
Uniformly transfer heat between disk 11, the built-in electric heater of heating dish 13 is driven real by heater driver
The existing heater heating output, second graphite flake 14 realizes the heating dish 13 and the ceramic disk
Uniformly transfer heat between 15, the ceramic disk 15 is used to realize heat-insulated, the base to the base 16
16 realize the connection with framework.Between the platen 11 and first graphite flake 12 and the heating
Temperature sensor is provided between device 13 and second graphite flake 14, in the platen 11 and described the
Temperature sensor between one graphite flake 12 is platen temperature sensor 17, the heater 13 with it is described
Temperature sensor between second graphite flake 14 is heater temperature sensor 18.In the present embodiment, described
The both sides up and down of heating dish 13 set graphite flake respectively, temperature can uniformly be propagated；And choose heater
Temperature sensor 18 is feedback control point, can choose platen temperature sensing with the output of quick response heater
Device 17 is technological evaluation point, can realize the smooth output of temperature in technological process, not vibrated by computer heating control
The influence of effect, so as to improve bonding precision.
Fig. 2 is refer to, the structural representation of its bonding heating control apparatus provided by one embodiment of the invention
Figure.As shown in Fig. 2 the bonding heating control apparatus 100 includes heating controller 30 and two heating
Device 10,20 and two heater drivers 40,50, the heater are used to enter silicon chip or sheet glass
Row heating pressurization, the heater is provided with heating using the heater described in above-described embodiment
Device and at least two temperature sensors；The heating controller 30 is used to realize in described two heaters
The measurement of each temperature sensor, exports the PWM apertures of heater respectively；The heater driver is according to institute
The PWM apertures of heating controller output are stated, the heater work is driven.
Described two heaters are respectively upper disk heater 10 and lower wall heater 20, it is described two plus
Hot actuating device is respectively upper disk heater driver 40 and lower wall heater driver 50.The computer heating control
Device 30 carries out temperature to each temperature sensor in the upper disk heater 10 and lower wall heater 20 respectively
Degree measurement, by heating control algorithms, exports the upper disk heater 10 and lower wall heater 20 respectively
The PWM apertures of middle heater；The upper disk heater driver 40 is exported according to the heating controller 30
The upper disk heater 10 in heater PWM apertures, drive in the upper disk heater 10
Heater work, the lower wall heater driver 50 according to the heating controller 30 export it is described under
The PWM apertures of heater in disk heater 20, drive the heater work in the lower wall heater 20
Make；Then the upper disk heater 10 carries out pressurized, heated, the lower wall heater 20 to silicon chip 70
Heating pressurization is carried out to silicon chip 80, so that two heaters work and separate simultaneously, saved
Heat time, improve the efficiency of heating surface.It is understood that the bonding heating control apparatus that the present invention is provided,
Can not only pressurized, heated be carried out to silicon chip or sheet glass, can be also used for it is well known by persons skilled in the art its
His material.
The bonding heating control apparatus 100 also includes man-machine interface 60, and the man-machine interface 60 is used to set
It is described bonding heating control apparatus device constant, to start or stop bonding technology, comprising heating starting,
The instruction such as closing.Described device constant includes heater PWM apertures setting value, the rate of heat addition and heater
Ratio, pid parameter of PWM aperture setting values etc..
Fig. 3 is refer to, the flow chart of its bonding method for heating and controlling provided by one embodiment of the invention.Such as
Shown in Fig. 3, the bonding method for heating and controlling comprises the following steps：
Step S01：The temperature of temperature sensor in heating controller measurement heater, exports the heating dress
Put the PWM apertures of middle heater；
Step S02：The PWM apertures that heater driver is exported according to the heating controller, driving is described
Heater works；
Step S03：The heater carries out heating pressurization to silicon chip or sheet glass.
Specifically, refer to shown in Fig. 2 and Fig. 3, in step S01, heating controller 30 is measured respectively
The temperature of the upper disk heater 10 and temperature sensor in the lower wall heater 20, passes through heating
Control algolithm, exports the upper disk heater 10 and heater in the lower wall heater 20 respectively
PWM apertures.
In step S02, what the upper disk heater driver 40 was exported according to the heating controller 30
The PWM apertures of heater in upper disk heater 10, drive the heater in the upper disk heater 10
Work；The lower wall heater that the lower wall heater driver 50 is exported according to the heating controller 30
The PWM apertures of heater in 20, drive the heater work in the lower wall heater 20.
In step S03, the upper disk heater 10 is with the lower wall heater 20 respectively to silicon chip
Or sheet glass carries out heating pressurization.
In the present embodiment, the heating controller exports the PWM of heater in two heaters and opened respectively
Degree, two heater drivers drive the heater in two heaters to work respectively, described two heating
Device works but separate simultaneously.
According to the size of deviation between the heter temperature and actually required temperature, by the heater
Heating process is divided into three phases：Speed heating period t1, temperature coarse tuning stage t2 and temperature accurate adjustment stage
T3, as shown in figure 4, abscissa represents time t, ordinate represents temperature T.In the speed heating period
T1, rate of heat addition ramp and heater PWM aperture setting values sv ratio k pv are gone out according to experimental calculation,
Set as the constant of bonding computer heating control；In the temperature coarse tuning stage t2, using pid control algorithm,
The constant of pid parameter, heater PWM apertures setting value sv clipping ranges as bonding computer heating control is set
Put；In the temperature accurate adjustment stage t3, using pid control algorithm, by pid parameter, heater PWM
Aperture setting value sv clipping ranges are set as the constant of bonding computer heating control.
The bonding method for heating and controlling that the present invention is provided, has been divided into three phases by the heating process of heater,
The quick heating of through-rate heating period, shortens the heat time, improves yield, while passing through temperature
Coarse tuning stage and temperature accurate adjustment stage, computer heating control oscillation effect is reduced, heating effect is improved；And
And realize that rate of heat addition stage power is adjustable, provide more technological parameters for bonding technology.
It refer to shown in Fig. 5, its heating control algorithms flow provided by one embodiment of the invention.Such as Fig. 5
Shown, after heater is begun to warm up, first choice judges whether to be in speed heating period t1：If being in
Speed heating period t1, then obtain kpv parameters, according to sv=ramp*kpv from bonding heating control apparatus constant
Sv values are calculated, the heater driver drives the heater to work, then judged according to the sv values
Whether need to close and heat；If not in speed heating period t1, then judging whether to be in temperature coarse adjustment rank
Section t2.If in temperature coarse tuning stage t2, then obtaining PID1 parameters from bonding heating control apparatus constant,
According to pid control algorithm, sv values are calculated, the heater driver adds according to driving the sv values
Hot device work, then judges whether to need to close heating；If being not on temperature coarse tuning stage t2, judge
Whether temperature accurate adjustment stage t3 is in.If in temperature accurate adjustment stage t3, then from bonding heating control apparatus
PID2 parameters are obtained in constant, according to pid control algorithm, sv values, the heater driver are calculated
The heater work is driven according to the sv values, then judges whether to need to close heating；If being not on
Temperature accurate adjustment stage t3, then directly judge whether to need to close heating.If desired heating is closed, then is directly closed
Heating is closed, if heating can not be closed, then again since judging whether to be in speed heating period t1, directly
Heating is closed to last.
In summary, the bonding heating control apparatus that the present invention is provided, measures two by heating controller and adds
The temperature of each temperature sensor in thermal, exports the PWM apertures of heater in two heaters respectively,
Two PWM apertures that two heater drivers are exported according to the heating controller respectively, driving two adds
Hot device work, two heaters carry out heating pressurization to silicon chip or sheet glass respectively, so that two add
Thermal works and separate simultaneously, saves the heat time, improves the efficiency of heating surface；The present invention is provided
Heater, graphite flake is set respectively in the both sides up and down of heating dish so that temperature is uniformly propagated；In pressure
Platen temperature sensor is set between disk and the first graphite flake, sets and adds between heating dish and the second graphite flake
Temperature of heat plate sensor, it is feedback control point to choose heating dish temperature sensor, can be with quick response heater
Output, it is technological evaluation point to choose platen temperature sensor, can realize the smooth of temperature in technological process
Output, is not influenceed by computer heating control oscillation effect, improves bonding precision；The bonding heating that the present invention is provided
Control method, is divided into three phases by the heating process of heater, the quick heating of through-rate heating period,
Shorten the heat time, yield is improved, while by temperature coarse tuning stage and temperature accurate adjustment stage, reducing
Computer heating control oscillation effect, improves heating effect；And realize that rate of heat addition stage power is adjustable, be key
Close technique and provide more technological parameters.
Foregoing description is only the description to present pre-ferred embodiments, not to any limit of the scope of the invention
Calmly, the those of ordinary skill in field of the present invention does according to the disclosure above content any change, modification, belong to
In the protection domain of claims.
Claims (12)
1. one kind bonding heating control apparatus, it is characterised in that including heating controller and two heating dresses
Put and two heater drivers；
The heater is used to silicon chip or sheet glass be provided with heating pressurization, the heater
Heater and at least two temperature sensors；
The heating controller is used to realize the measurement to each temperature sensor in described two heaters, point
Not Shu Chu heater PWM apertures；
The PWM apertures that the heater driver is exported according to the heating controller, drive the heater
Work.
2. heating control apparatus is bonded as claimed in claim 1, it is characterised in that also including man-machine interface,
The man-machine interface is used to set device parameter, to start or stop bonding technology.
3. heating control apparatus is bonded as claimed in claim 2, it is characterised in that described device constant bag
Include：Ratio, the PID of heater PWM apertures setting value, the rate of heat addition and heater PWM aperture setting values
Parameter.
4. heating control apparatus is bonded as claimed in claim 1, it is characterised in that the heater is pressed
Order includes successively：Platen, the first graphite flake, heating dish, the second graphite flake, ceramic disk and base.
5. heating control apparatus is bonded as claimed in claim 4, it is characterised in that set in the heating dish
It is equipped with electric heater.
6. as claimed in claim 4 bonding heating control apparatus, it is characterised in that the platen with it is described
Temperature sensor is provided between first graphite flake and between the heater and second graphite flake.
7. one kind bonding method for heating and controlling, it is characterised in that comprise the following steps：
Step S01：The temperature of temperature sensor in heating controller measurement heater, exports the heating dress
Put the PWM apertures of middle heater；
Step S02：The PWM apertures that heater driver is exported according to the heating controller, driving is described
Heater works；
Step S03：The heater carries out heating pressurization to silicon chip or sheet glass.
8. method for heating and controlling is bonded as claimed in claim 7, it is characterised in that the heating controller
The PWM apertures of heater in two heaters are exported respectively, and two heater drivers drive two respectively
Heater works, and described two heaters work but separate simultaneously.
9. method for heating and controlling is bonded as claimed in claim 7, it is characterised in that according to the heater
The size of temperature deviation value, is divided into three phases by the heating process of the heater：The speed heating period,
Temperature coarse tuning stage and temperature accurate adjustment stage.
10. method for heating and controlling is bonded as claimed in claim 9, it is characterised in that added in the speed
In the hot stage, the ratio of the rate of heat addition and heater PWM aperture setting values is gone out according to experimental calculation, bonding is used as
The constant of computer heating control is set.
11. method for heating and controlling is bonded as claimed in claim 9, it is characterised in that thick in the temperature
The tune stage, using pid control algorithm, by pid parameter, heater PWM aperture setting value clipping ranges
Set as the constant of bonding computer heating control.
12. method for heating and controlling is bonded as claimed in claim 9, it is characterised in that in temperature essence
The tune stage, using pid control algorithm, by pid parameter, heater PWM aperture setting value clipping ranges
Set as the constant of bonding computer heating control.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610200573.8A CN107293504B (en) | 2016-03-31 | 2016-03-31 | Bonding heating control device and method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610200573.8A CN107293504B (en) | 2016-03-31 | 2016-03-31 | Bonding heating control device and method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107293504A true CN107293504A (en) | 2017-10-24 |
| CN107293504B CN107293504B (en) | 2020-05-01 |
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ID=60088151
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| CN201610200573.8A Active CN107293504B (en) | 2016-03-31 | 2016-03-31 | Bonding heating control device and method thereof |
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| KR100998522B1 (en) * | 2010-02-23 | 2010-12-07 | 이경용 | Wafer bonding apparatus |
| CN201708143U (en) * | 2010-03-22 | 2011-01-12 | 无锡华润安盛科技有限公司 | Fixture for packaging and bonding sensor chips |
| CN102347209A (en) * | 2010-07-27 | 2012-02-08 | 台湾积体电路制造股份有限公司 | Substrate bonding system and method of modifying the same |
| CN102460677A (en) * | 2009-04-16 | 2012-05-16 | 休斯微技术股份有限公司 | Improved apparatus for temporary wafer bonding and debonding |
| CN102934198A (en) * | 2010-09-28 | 2013-02-13 | 三菱重工业株式会社 | Normal-temperature bonding device and normal-temperature bonding method |
| CN204632725U (en) * | 2015-03-31 | 2015-09-09 | 山西南烨立碁光电有限公司 | A kind of novel Wafer Bonding equipment |
| KR20160014141A (en) * | 2014-07-28 | 2016-02-11 | 주식회사 나노솔텍 | Apparatus for bonding multiple substrate |
| CN105448781A (en) * | 2015-12-10 | 2016-03-30 | 北京中电科电子装备有限公司 | Chip heating and bonding device |
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2016
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Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102460677A (en) * | 2009-04-16 | 2012-05-16 | 休斯微技术股份有限公司 | Improved apparatus for temporary wafer bonding and debonding |
| KR100998522B1 (en) * | 2010-02-23 | 2010-12-07 | 이경용 | Wafer bonding apparatus |
| CN201708143U (en) * | 2010-03-22 | 2011-01-12 | 无锡华润安盛科技有限公司 | Fixture for packaging and bonding sensor chips |
| CN102347209A (en) * | 2010-07-27 | 2012-02-08 | 台湾积体电路制造股份有限公司 | Substrate bonding system and method of modifying the same |
| CN102934198A (en) * | 2010-09-28 | 2013-02-13 | 三菱重工业株式会社 | Normal-temperature bonding device and normal-temperature bonding method |
| KR20160014141A (en) * | 2014-07-28 | 2016-02-11 | 주식회사 나노솔텍 | Apparatus for bonding multiple substrate |
| CN204632725U (en) * | 2015-03-31 | 2015-09-09 | 山西南烨立碁光电有限公司 | A kind of novel Wafer Bonding equipment |
| CN105448781A (en) * | 2015-12-10 | 2016-03-30 | 北京中电科电子装备有限公司 | Chip heating and bonding device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN107293504B (en) | 2020-05-01 |
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