CN107146855A - Oled substrate and preparation method thereof, display device - Google Patents
Oled substrate and preparation method thereof, display device Download PDFInfo
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- CN107146855A CN107146855A CN201710343040.XA CN201710343040A CN107146855A CN 107146855 A CN107146855 A CN 107146855A CN 201710343040 A CN201710343040 A CN 201710343040A CN 107146855 A CN107146855 A CN 107146855A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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Abstract
The present invention provides a kind of oled substrate and preparation method thereof, display device, belongs to display technology field.The oled substrate of the present invention, including：Substrate, switching transistor and driving transistor on the substrate is set, the switching transistor is different with the material of the active layer of the driving transistor, and electron mobility of the electron mobility more than the active layer of the driving transistor of the active layer of the switching transistor.It may therefore be assured that the switching speed of switching transistor, improves the performance of substrate.And, when more in the prior art using the switching transistor and driving transistor of the active layer of identical material, by the wider of the active layer making of driving transistor, for the technical scheme of the mobility of the active layer that reduces driving transistor, the width of the active layer of driving transistor need not be widened in the application, so as to reduce the size of driving transistor, and then more high-resolution display can be realized.
Description
Technical field
The invention belongs to display technology field, and in particular to a kind of oled substrate and preparation method thereof, display device.
Background technology
OLED (Organic Light Emitting Diode, OLED) shows skill compared to present main flow
Art Thin Film Transistor-LCD (Thin Film Transisitor Liquid Crystal Display, TFT-LCD),
Have the advantages that wide viewing angle, high brightness, high-contrast, low energy consumption, volume are more frivolous, be Jiao of current flat panel display concern
Point.The driving method of OLED be divided into passive matrix type (PM, Passive Matrix) and active matrix (AM,
Active Matrix) two kinds.And compared to passive matrix type driving, active matrix driving has that display information amount is big, power consumption
Low, device lifetime length, the advantages of picture contrast is high.
As shown in Figure 1, it is however generally that the drive circuit of active matrix organic light emitting display part includes, crystal is switched
Pipe, driving transistor and organic luminescent device (OLED).The grid connection scan line of switching transistor, it drains (or source electrode) even
Data wire 5 is connect, the grid of its source electrode (or drain electrode) connection driving transistor.Source electrode (or drain electrode) connection power supply of driving transistor
Line, its (or source electrode) connection OLED that drains anode, OLED minus earth, in the source electrode (or drain electrode) and grid of driving transistor
Storage capacitance is connected between pole.Wherein, in order to improve switching rate, it usually needs brilliant using the switch compared with high electron mobility
Body pipe；It is lower in the electron mobility for requiring driving transistor in order to preferably realize that OLED shows different GTGs.
And in existing process, the thin film transistor (TFT) of same performance parameter is made in switching transistor and driving transistor, therefore it is unfavorable for
The effective control opened with closure switch thin film transistor (TFT) and GTG.
The content of the invention
It is contemplated that it is good there is provided a kind of switch performance at least to solve one of technical problem present in prior art
Oled substrate and preparation method thereof, display device.
The technical scheme that solution present invention problem is used is a kind of oled substrate, including：Substrate, is arranged on described
The material of the active layer of switching transistor and driving transistor in substrate, the switching transistor and the driving transistor is not
Together, and the active layer of the switching transistor electron mobility be more than the driving transistor active layer electron transfer
Rate.
Preferably, the electron mobility of the active layer of the switching transistor is more than 50cm2/VS；
The electron mobility of the active layer of the driving transistor is 1~10cm2/VS。
Preferably, the material of the active layer of the switching transistor includes：It is any in ZnO, ZnON, IGZXO, ITZO
It is a kind of；
The material of the active layer of the driving transistor includes IGZO or IGZTO.
Preferably, the active layer of the switching transistor includes the double-layer structure for being successively set on the top, wherein,
First Rotating fields of the active layer are set with the active layer of the driving transistor with layer and material is identical.
The technical scheme that solution present invention problem is used is a kind of preparation method of oled substrate, including：Pass through
Patterning processes, in substrate formed include switching transistor active layer and driving transistor active layer figure the step of；
Wherein, the switching transistor is different with the material of the active layer of the driving transistor, and the switching transistor is active
The electron mobility of layer is more than the electron mobility of the active layer of the driving transistor.
Preferably, it is described by patterning processes, the active layer for including switching transistor is formed in substrate and driving is brilliant
The step of figure of the active layer of body pipe, specifically include：
In substrate, the first semiconductor material layer is formed, and the driving transistor is included by patterning processes formation
The figure of active layer；
In the substrate for completing above-mentioned steps, the second semiconductor material layer is formed, and institute is included by patterning processes formation
State the figure of the active layer of switching transistor；
Or,
In substrate, the second semiconductor material layer is formed, and the switching transistor is included by patterning processes formation
The figure of active layer；
In the substrate for completing above-mentioned steps, the first semiconductor material layer is formed, and institute is included by patterning processes formation
State the figure of the active layer of driving transistor.
Preferably, it is described by patterning processes, the active layer for including switching transistor is formed in substrate and driving is brilliant
The step of active layer of body pipe, specifically include：
The first semiconductor material layer and the second semiconductor material layer are sequentially depositing in substrate, and in second semiconductor
Coating photoresist layer above material layer；
Exposure, the development of different accuracy are carried out to the photoresist layer, photoresist reserved area, photoresist half is formed and retains
Area, photoresist remove area completely；Wherein, the position of the photoresist reserved area and the active layer of the switching transistor to be formed
Correspondence is put, the reserved area of photoresist half is corresponding with the position of the active layer of the driving transistor to be formed；
Remove and be located at the photoresist that the photoresist removes area completely, and the part positioned at the reserved area of photoresist half
Photoresist, so that the thickness of the reserved area of the photoresist half residue photoresist is first thickness；
Remove successively and remove corresponding second semiconductor material layer in area and the first semi-conducting material completely with the photoresist
Layer；
Remove the photoresist of first thickness；
Second semiconductor material layer corresponding with the reserved area of photoresist half is removed, to form the driving transistor
Active layer；
Remaining photoresist is removed, to form the active layer of the switching transistor.
Preferably, the electron mobility of the active layer of the switching transistor is more than 50cm2/VS；
The electron mobility of the active layer of the driving transistor is 1~10cm2/VS。
Preferably, the material of the active layer of the switching transistor includes：It is any in ZnO, ZnON, IGZXO, ITZO
It is a kind of；
The material of the active layer of the driving transistor includes IGZO or IGZTO.
The technical scheme that solution present invention problem is used is a kind of display device, and it includes above-mentioned OLED bases
Plate.
The present invention has the advantages that：
In oled substrate in the present invention, because switching transistor is different with the material of driving transistor, and switch is brilliant
The electron mobility of the active layer of body pipe is more than the electron mobility of the active layer of driving transistor, that is to say, that switching transistor
Active layer electron mobility selection it is larger, and the electron mobility of the active layer of driving transistor selection it is smaller
, it may therefore be assured that the switching speed of switching transistor, improves the performance of substrate.Moreover, more in the prior art using identical
When the switching transistor and driving transistor of the active layer of material, by the wider of the active layer making of driving transistor, to reduce
For the technical scheme of the mobility of the active layer of driving transistor, the active layer of driving transistor need not be widened in the application
Width, so as to reduce the size of driving transistor, and then can realize more high-resolution display.
Brief description of the drawings
Fig. 1 is the structural representation of the oled substrate of embodiments of the invention 1；
Fig. 2 is the structural representation of another oled substrate of embodiments of the invention 1；
Fig. 3 is the flow chart of the preparation method of the oled substrate of embodiments of the invention 2；
Fig. 4 is the flow chart of the preparation method of another oled substrate of embodiments of the invention 2；
Fig. 5 is the circuit diagram of a pixel cell on oled substrate.
Wherein reference is：10th, substrate；11st, the grid of driving transistor；12nd, the grid of switching transistor；3rd, grid
Insulating barrier；21st, the active layer of driving transistor；22nd, the active layer of switching transistor；40th, etching barrier layer；41、42、43、44、
Contact via；51st, the source electrode 52 of driving transistor, the drain electrode of driving transistor；53rd, the source electrode of switching transistor；5th, switch brilliant
The drain electrode of body pipe；6th, photoresist layer；60th, photoresist goes to remove area completely；61st, the reserved area of photoresist half；62nd, photoresist reserved area；
63rd, remaining photoresist；STFT, the transistor that opens the light, DTFT, driving transistor.
Embodiment
To make those skilled in the art more fully understand technical scheme, below in conjunction with the accompanying drawings and specific embodiment party
Formula is described in further detail to the present invention.
Embodiment 1：
As illustrated in fig. 1 and 2, the present embodiment provides a kind of oled substrate, including：Substrate 10, is arranged in the substrate 10
Switching transistor STFT and driving transistor DTFT, the switching transistor STFT and the active layer 12 of the driving transistor
Material is different, and the electron mobility of the active layer 22 of the switching transistor is more than the active layer 12 of the driving transistor
Electron mobility.
At this it should be noted that so-called switching transistor STFT and the active layer 12 of driving transistor in the present embodiment
Material difference refers to that the active layer material of both is incomplete same, but which part composition be can be with identical.
In oled substrate in the present embodiment, due to switching transistor STFT and driving transistor DTFT material not
Together, and the active layer 22 of switching transistor electron mobility be more than driving transistor active layer 12 electron mobility,
That is the electron mobility selection of the active layer 22 of switching transistor is larger, and the electronics of the active layer of driving transistor
Mobility 12 selects smaller, it may therefore be assured that switching transistor STFT switching speed, improves the property of oled substrate
Energy.Moreover, when using the switching transistor STFT and driving transistor DTFT of the active layer of identical material more in the prior art, will
It is wider that the active layer 12 of driving transistor makes, with the technical scheme of the mobility of the active layer 12 that reduces driving transistor
The width of the active layer 12 of driving transistor need not be widened in speech, the application, so as to reduce driving transistor DTFT chi
It is very little, and then more high-resolution display can be realized.
Wherein, the electron mobility of the active layer 22 of the switching transistor is more than 50cm2/VS；The driving transistor
Active layer 12 electron mobility be 1~10cm2/VS。
Wherein, the material of the active layer 22 of the switching transistor includes：It is any one in ZnO, ZnON, IGZXO, ITZO
Kind；Wherein, X represents some elements such as Sn in IGZXO, in order on the basis of IGZO, and adulterate some other compositions, carries
High IGZO mobility；The material of the active layer 12 of the driving transistor is including IGZO, IGZTO etc., naturally it is also possible to according to
Concrete condition is specifically set.
Wherein, the active layer 22 of the switching transistor in the present embodiment includes two layers of knot for being successively set on the top of substrate 10
Structure (221 and 222), wherein, the active layer 12 of first layer knot 221 and driving transistor is that same layer is set, and the two material phase
Together.Why it is arranged such and is due to, the switching transistor STFT of this kind of structure and the active layer 12 of driving transistor can be adopted
With a patterning processes step.Specifically the preparation method of oled substrate in conjunction with the embodiments in 2 is illustrated.Certainly, switch brilliant
Body pipe STFT and the active layer of driving transistor 12 can be single layer structure.
Herein it should be noted that switching transistor and driving transistor also include grid (11,21), source electrode and drain electrode
(51、52、53、54)；Gate insulator 3 between grid and active layer；Where source, drain electrode between layer and active layer
The etching barrier layer 40 of volume.Certainly, other intimate structures are gone back, be will not enumerate herein.
Embodiment 2：
The present embodiment provides a kind of preparation method of oled substrate, and the preparation method can be to prepare in embodiment 1
Oled substrate.Wherein, switching transistor STFT and driving transistor DTFT can be top gate type or bottom gate thin film transistor.
When switching transistor STFT and driving transistor DTFT are bottom gate thin film transistor, as shown in figure 3, the OLED array bases
The preparation method of plate specifically includes following steps：
Step 1: on the substrate 10, by sputtering, exposing, developing, etch, the technique such as stripping forms switch crystal simultaneously
The grid 21 of pipe and the grid 11 of driving transistor.
Wherein, the material of the grid 21 of switching transistor and the grid 11 of driving transistor can close for molybdenum (Mo), molybdenum niobium
Golden (MoNb), aluminium (Al), aluminium neodymium alloy (AlNd), tungsten (W), titanium (Ti) and one kind in copper (Cu) or multiple material shape in them
Into single or multiple lift composite laminate.
Step 2: in the substrate 10 for completing above-mentioned steps, forming gate insulator 3.
Wherein, the material of gate insulator 3 can be oxide (SiOx), nitride (SiNx), the oxygen of hafnium of silicon of silicon
One kind in compound (HfOx), the nitrogen oxides (SiON) of silicon, oxide (AlOx) of aluminium etc. or two kinds of material compositions in them
Multilayer complex films.
Step 3: in the substrate 10 for completing above-mentioned steps, forming the first semiconductor material layer, and pass through patterning processes shape
Into the figure of the active layer 12 including the driving transistor.
Wherein, the material of the first semiconductor material layer is including IGZO, IGZTO etc.；Electron mobility is 1~10cm2/VS。
Step 4: in the substrate 10 for completing above-mentioned steps, forming the second semiconductor material layer, and pass through patterning processes shape
Into the figure of the active layer 22 including the switching transistor.
Wherein, the material of the second semiconductor material layer includes：Any one in ZnO, ZnON, IGZXO, ITZO；Wherein,
X in IGZXO represents some elements such as Sn, in order on the basis of IGZO, and adulterate some other compositions, improves IGZO
Mobility.The electron mobility of the active layer 22 of switching transistor is more than 50cm2/VS。
Step 5: in the substrate 10 for completing above-mentioned steps, forming etching barrier layer 40.
Wherein, the material of etching barrier layer 40 can be oxide (SiOx), nitride (SiNx), the oxygen of hafnium of silicon of silicon
In compound (HfOx), the nitrogen oxides (SiON) of silicon, the oxide (AlOx) of aluminium or organic material any one or a few
Combination.
Step 6: in the substrate 10 for completing above-mentioned steps, with switching thin-film transistor and the source electrode of driving film crystal
It is corresponding with drain electrode, through the contact via (41,42,43,44) of etching barrier layer 40.
Step 7: complete above-mentioned steps substrate 10 on, by patterning processes formation include switching thin-film transistor with
Drive the source electrode of thin film transistor (TFT) and the figure of drain electrode (51,52,53,54), and switching transistor STFT and driving transistor
DTFT source electrode and drain electrode are connected by contacting via with respective active layer respectively.
Wherein, it can be molybdenum (Mo), molybdenum niobium alloy (MoNb), aluminium (Al), the conjunction of aluminium neodymium that source electrode and the material of drain electrode, which can be,
The single or multiple lift composite laminate of one or more materials formation in golden (AlNd), titanium (Ti) and copper (Cu).
As shown in figure 5, certainly, the passivation layer for forming covering source electrode and drain electrode can also be included after completing the procedure,
The contact via through passivation layer, over the passivation layer square imaging are formed above the drain electrode (or source electrode) of driving thin film transistor (TFT)
Plain electrode layer, pixel electrode layer is connected by the contact via through passivation layer with drain electrode (or source electrode), on pixel electrode layer
Square pixel defines layer (PDL；PIXEL DESIGN LAYER), i.e. pixel electrode layer organic electroluminescence device D1
Anode layer, is deposited the cathode layer needed for luminescent layer and luminescent layer on pixel electrode layer.
It should be noted that the connection scan line VScan of grid 21 (n) of switching transistor, its 54 (or source electrode 53) that drain
Data wire Vdata is connected, the grid 11 of its source electrode (or drain electrode) connection driving transistor.Driving transistor source electrode 51 (or leakage
Pole 52) connection power line VDD, its 52 (or source electrodes 51) connection OLED that drains anode, OLED minus earth GND, in driving
The source electrode 51 (or drain electrode 52) of transistor is connected with storage capacitance C1 between its grid 11.
Wherein the order of above-mentioned step three and step 4 can also be exchanged.It is not described in detail herein.
As shown in figure 4, additionally providing a kind of oled substrate in the present embodiment in order to simplify the preparation technology of oled substrate
Preparation method, the preparation method only difference is that the active layer 22 of switching transistor with above-mentioned OLED preparation methods and drive
The preparation of the active layer 12 of dynamic transistor, thus it is following only to switch transistor active layer 22 and the active layer 12 of driving transistor
Preparation carry out message detail specifications, it is no longer repeated for remainder.
It is sequentially depositing the first semiconductor material layer 1 and the second semiconductor material layer 2 on the substrate 10, and described the second half
The top of conductor material layer 1 coating photoresist layer 6.
Exposure, the development of different accuracy are carried out to the photoresist layer 6, photoresist reserved area 62, photoresist half is formed and protects
Area 61, photoresist is stayed to remove area 60 completely；Wherein, the photoresist reserved area and the switching transistor to be formed is active
The position correspondence of layer 22, the position pair of the reserved area of photoresist half and the active layer 12 of the driving transistor to be formed
Should.
Remove and be located at the photoresist that the photoresist removes area completely, and the part positioned at the reserved area of photoresist half
Photoresist, so that the thickness of the reserved area of the photoresist half residue photoresist is first thickness.
Remove successively and remove corresponding second semiconductor material layer in area and the first semi-conducting material completely with the photoresist
Layer.
Remove the photoresist of first thickness.
Second semiconductor material layer corresponding with the reserved area of photoresist half is removed, to form the driving transistor
Active layer 12；
Remaining photoresist is removed, to form the active layer 11 of the switching transistor.
Embodiment 3：
The present embodiment provides a kind of display device, and it includes the oled substrate in embodiment 1.The display device can be：
Any production with display function such as mobile phone, tablet personal computer, television set, display, notebook computer, DPF, navigator
Product or part.
Because the display device in the present embodiment includes the oled substrate in embodiment 1, therefore it has higher resolution ratio.
Certainly, other conventional structures can also be included in the display device of the present embodiment, such as power subsystem, display driving are single
Member etc..
It is understood that the principle that embodiment of above is intended to be merely illustrative of the present and the exemplary implementation that uses
Mode, but the invention is not limited in this.For those skilled in the art, the essence of the present invention is not being departed from
In the case of refreshing and essence, various changes and modifications can be made therein, and these variations and modifications are also considered as protection scope of the present invention.
Claims (10)
1. a kind of oled substrate, including：Substrate, sets switching transistor and driving transistor on the substrate, its feature
It is, the switching transistor is different with the material of the active layer of the driving transistor, and the switching transistor is active
The electron mobility of layer is more than the electron mobility of the active layer of the driving transistor.
2. oled substrate according to claim 1, it is characterised in that the electron transfer of the active layer of the switching transistor
Rate is more than 50cm2/VS；
The electron mobility of the active layer of the driving transistor is 1~10cm2/VS。
3. oled substrate according to claim 1, it is characterised in that the material bag of the active layer of the switching transistor
Include：Any one in ZnO, ZnON, IGZXO, ITZO；
The material of the active layer of the driving transistor includes IGZO or IGZTO.
4. oled substrate according to claim 1, it is characterised in that the active layer of the switching transistor includes setting successively
The double-layer structure in the top is put, wherein, the first Rotating fields and the active layer of the driving transistor of the active layer are same
Layer is set and material is identical.
5. a kind of preparation method of oled substrate, it is characterised in that including：By patterning processes, being formed in substrate includes opening
Close transistor active layer and driving transistor active layer pattern the step of；Wherein, the switching transistor and the driving
The material of the active layer of transistor is different, and the electron mobility of the active layer of the switching transistor is more than the driving crystal
The electron mobility of the active layer of pipe.
6. the preparation method of oled substrate according to claim 5, it is characterised in that described by patterning processes, in base
On bottom formed include switching transistor active layer and driving transistor active layer figure the step of, specifically include：
In substrate, the first semiconductor material layer is formed, and the active of the driving transistor is included by patterning processes formation
The figure of layer；
In the substrate for completing above-mentioned steps, the second semiconductor material layer is formed, and described open is included by patterning processes formation
Close the figure of the active layer of transistor；
Or,
In substrate, the second semiconductor material layer is formed, and the active of the switching transistor is included by patterning processes formation
The figure of layer；
In the substrate for completing above-mentioned steps, the first semiconductor material layer is formed, and described drive is included by patterning processes formation
The figure of the active layer of dynamic transistor.
7. the preparation method of oled substrate according to claim 5, it is characterised in that described by patterning processes, in base
On bottom formed include switching transistor active layer and driving transistor active layer the step of, specifically include：
The first semiconductor material layer and the second semiconductor material layer are sequentially depositing in substrate, and in second semi-conducting material
Layer top coating photoresist layer；
Exposure, the development of different accuracy are carried out to the photoresist layer, photoresist reserved area, the reserved area of photoresist half, light is formed
Photoresist removes area completely；Wherein, the position pair of the photoresist reserved area and the active layer of the switching transistor to be formed
Should, the reserved area of photoresist half is corresponding with the position of the active layer of the driving transistor to be formed；
Remove and be located at the photoresist that the photoresist removes area completely, and the part photoetching positioned at the reserved area of photoresist half
Glue, so that the thickness of the reserved area of the photoresist half residue photoresist is first thickness；
Remove successively and remove corresponding second semiconductor material layer in area and the first semiconductor material layer completely with the photoresist；
Remove the photoresist of first thickness；
Second semiconductor material layer corresponding with the reserved area of photoresist half is removed, to form the active of the driving transistor
Layer；
Remaining photoresist is removed, to form the active layer of the switching transistor.
8. the preparation method of oled substrate according to claim 5, it is characterised in that the active layer of the switching transistor
Electron mobility be more than 50cm2/VS；
The electron mobility of the active layer of the driving transistor is 1~10cm2/VS。
9. the preparation method of oled substrate according to claim 5, it is characterised in that the active layer of the switching transistor
Material include：Any one in ZnO, ZnON, IGZXO, ITZO；
The material of the active layer of the driving transistor includes IGZO or IGZTO.
10. a kind of display device, it is characterised in that including the oled substrate any one of claim 1-3.
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| CN109256464A (en) * | 2018-11-08 | 2019-01-22 | 深圳市万普拉斯科技有限公司 | OLED display |
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| US11069725B2 (en) | 2018-09-20 | 2021-07-20 | Hefei Xinsheng Optoelectronics Technology Co., Ltd. | Display substrate and method of preparing the same, and display device |
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