CN107146830B - A method of preparing the graphene/silicon MSM-PD with low of flexible and transparent - Google Patents
A method of preparing the graphene/silicon MSM-PD with low of flexible and transparent Download PDFInfo
- Publication number
- CN107146830B CN107146830B CN201710423821.XA CN201710423821A CN107146830B CN 107146830 B CN107146830 B CN 107146830B CN 201710423821 A CN201710423821 A CN 201710423821A CN 107146830 B CN107146830 B CN 107146830B
- Authority
- CN
- China
- Prior art keywords
- silicon
- film
- graphene
- single crystal
- silicon substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 78
- 239000010703 silicon Substances 0.000 title claims abstract description 78
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 49
- 229910021389 graphene Inorganic materials 0.000 title claims abstract description 48
- 238000000034 method Methods 0.000 title claims abstract description 23
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 77
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 36
- 239000010408 film Substances 0.000 claims abstract description 35
- 239000013078 crystal Substances 0.000 claims abstract description 23
- 239000000758 substrate Substances 0.000 claims abstract description 23
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims abstract description 18
- 239000010931 gold Substances 0.000 claims abstract description 18
- 229910052737 gold Inorganic materials 0.000 claims abstract description 18
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 18
- 238000000926 separation method Methods 0.000 claims abstract description 17
- 239000010409 thin film Substances 0.000 claims abstract description 8
- 238000005530 etching Methods 0.000 claims abstract description 7
- 239000007788 liquid Substances 0.000 claims abstract description 4
- 238000001459 lithography Methods 0.000 claims abstract description 4
- YMWUJEATGCHHMB-UHFFFAOYSA-N Dichloromethane Chemical compound ClCCl YMWUJEATGCHHMB-UHFFFAOYSA-N 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 238000001020 plasma etching Methods 0.000 claims description 6
- 239000004926 polymethyl methacrylate Substances 0.000 claims description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 5
- 239000011889 copper foil Substances 0.000 claims description 5
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims description 5
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 4
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 claims description 4
- 229910000366 copper(II) sulfate Inorganic materials 0.000 claims description 4
- 229910000041 hydrogen chloride Inorganic materials 0.000 claims description 4
- 229910001868 water Inorganic materials 0.000 claims description 4
- 238000005229 chemical vapour deposition Methods 0.000 claims description 3
- 238000005566 electron beam evaporation Methods 0.000 claims description 3
- 230000003628 erosive effect Effects 0.000 claims description 3
- 238000001259 photo etching Methods 0.000 claims description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052804 chromium Inorganic materials 0.000 claims description 2
- 239000011651 chromium Substances 0.000 claims description 2
- 239000008367 deionised water Substances 0.000 claims description 2
- 229910021641 deionized water Inorganic materials 0.000 claims description 2
- BAPJBEWLBFYGME-UHFFFAOYSA-N Methyl acrylate Chemical compound COC(=O)C=C BAPJBEWLBFYGME-UHFFFAOYSA-N 0.000 claims 2
- 239000011248 coating agent Substances 0.000 claims 1
- 238000000576 coating method Methods 0.000 claims 1
- 238000001514 detection method Methods 0.000 abstract description 4
- 230000004044 response Effects 0.000 abstract description 3
- 230000004888 barrier function Effects 0.000 abstract description 2
- 238000002360 preparation method Methods 0.000 abstract description 2
- 230000004043 responsiveness Effects 0.000 abstract 1
- 238000001228 spectrum Methods 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 description 7
- 230000005684 electric field Effects 0.000 description 6
- 230000003287 optical effect Effects 0.000 description 6
- 239000000463 material Substances 0.000 description 4
- 230000005693 optoelectronics Effects 0.000 description 3
- 230000009471 action Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 150000001336 alkenes Chemical class 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 150000004702 methyl esters Chemical class 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/108—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the Schottky type
- H01L31/1085—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the Schottky type the devices being of the Metal-Semiconductor-Metal [MSM] Schottky barrier type
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Light Receiving Elements (AREA)
Abstract
The invention discloses a kind of methods of graphene/silicon MSM-PD with low for preparing flexible and transparent, comprising: the silicon thin film of SOI silicon substrate is etched into silicon strip；Gold electrode figure, gold-plated electrode are made by lithography in the silica upper surface of the barrier of SOI silicon substrate；Prepare single crystal graphene film；Single crystal graphene film is covered in silica separation layer, silicon strip and gold electrode upper surface；Single crystal graphene film pattern is melted into interdigitation；PC film is covered in patterned device upper surface, edge PC film is scraped off, puts into BOE etching liquid and etch away silicon substrate；Photodetector of the present invention can carry out wide spectrum detection, and it is low to solve the problems, such as that traditional silicon substrate PIN junction responds ultraviolet detector, and photo-generated carrier and silicon crystal lattice generate electron impact ionization, obtain very high gain；Preparation process of the present invention is simple, low in cost, has responsiveness high, fast response time, internal gain is big, and on-off ratio is small, the characteristics of being easily integrated.
Description
Technical field
The invention belongs to technical field of photoelectric detection, it is related to photoelectric detector structure more particularly to a kind of prepares flexibility
The method of transparent graphene/silicon MSM-PD with low
Background technique
Good electric conductivity, higher optical clarity and good mechanical flexibility make graphene become next-generation soft
Property electronic device has relatively good application prospect.Wherein graphene forms schottky junction in conjunction with semiconductor, can be applied to electricity
Son and optoelectronic areas.Although organic semiconductor is substantially flexibly, graphene-semiconductor Schottky knot is flexible electronic
The ideal chose of device.However, such as stability is poor, the main problems such as not reproducible response and device performance difference, especially with
Silicon-based devices are compared, and are limited it and are widely applied.In addition, organic semiconductor has lower migration compared with monocrystalline silicon
Rate.
Silicon pushes always electronics, photoelectron and solar-electricity as one of most important semiconductor material of twentieth century
The immense success of pond industry, wherein being used mostly in the form of monocrystalline, polycrystalline silicon wafer and amorphous and nanocrystalline thin film.By
In the bandgap structure that silicon is suitable for, mature CMOS fabrication technology, high reliability, the surface state well controlled can with low cost
Extension production and high speed optoelectronic detection, make silicon become the ideal semiconductor material for photoelectric detector.However body silicon crystal
Rigidity limit it in the application in flexible optoelectronic detector field, in terms of especially flexible detection electronic device.But work as Si
It is preferable using flexibility when film is thinned to less than 50 microns, be easily bent, and common scissor cut can be used, make its
There is certain application value in flexible electronic application.
Summary of the invention
In view of the above-mentioned deficiencies in the prior art, it is an object of the present invention to provide a kind of graphene/silicon gold for preparing flexible and transparent
The method of category-semiconductor-metal (MSM) photodetector.
The purpose of the present invention is achieved through the following technical solutions: a kind of graphene/silicon gold preparing flexible and transparent
Category-semiconductor-metal photodetector method, comprising the following steps:
(1) silicon thin film of SOI silicon substrate is etched into rectangular silicon strip, the SOI using deep energy level reactive ion etching machine ICP
Silicon substrate includes silicon thin film, silica separation layer and silicon substrate from top to bottom；
(2) the gold electrode figure of silicon strip is made positioned at silicon strip two sides and is parallel to by lithography in silica upper surface of the barrier,
Then electron beam evaporation technique gold-plated electrode is used；
(3) single crystal graphene film is prepared in copper foil substrate using chemical vapor deposition method；
(4) single crystal graphene film is covered in silica separation layer, silicon strip and gold electrode upper surface；
(5) single crystal graphene film is patterned into interdigitation using photoetching technique, is gone followed by plasma etching
Except extra graphene, it is graphical after single crystal graphene film coverage area in the range of gold electrode surrounds；
(6) PC film is covered in the patterned device upper surface that step obtains, scrapes off edge PC film, and put BOE quarter into
Silicon substrate is etched away in erosion liquid, prepares the ultra-thin graphene/silicon MSM-PD with low of flexible and transparent.
Further, in the step, the silicon film thickness is 200nm, silicon strip with a thickness of 200nm, silica every
Absciss layer is with a thickness of 100nm.
Further, in the step, growth thickness is the chromium adhesion layer of 5nm first on silica separation layer, so
The gold electrode of 60nm is grown afterwards.
Further, in the step, the transfer method of graphene are as follows: single crystal graphene film surface is uniformly coated one
Layer polymethyl methacrylate film, is then placed in 4h erosion removal copper foil in etching solution, leaves by poly-methyl methacrylate
The single crystal graphene film of ester support；After the single crystal graphene film that polymethyl methacrylate supports is cleaned with deionized water
It is transferred to the upper surface of silica separation layer, silicon strip and gold electrode；Finally poly- methyl-prop is removed with methylene chloride and isopropanol
E pioic acid methyl ester；Wherein, the etching solution is made of CuSO4, HCl and water, CuSO4:HCl:H2O=10g:50ml:50ml.
The invention has the following advantages: the detector using graphene as active layer and transparent electrode, eliminates dead layer,
Enhance the absorption of incident light；Silica separation layer reduces the influence of silicon face state, while inhibiting reverse saturation current；?
Smaller bias can work normally, and patterned silicon strip thickness used in the present invention is about 200nm, much smaller than the diffusion of body silicon
Length (μm) is conducive to the separation of photo-generated carrier, can effectively distinguish brightness electric current, improve the performance of photodetector；
The ultra-thin graphene MSM photoelectric detector flexibility prepared is good and transparent, can theoretically be transferred on any carrier, and have
There is good performance.Ultraviolet imagery can be carried out to its array simultaneously.Incident light is irradiated to photodetector surfaces of the present invention, by stone
Black alkene and silicon substrate absorb.The photo-generated carrier (hole-electron pair) of generation is separated under built-in electric field action, direction of an electric field
Graphene is directed toward by silicon.Electric field is stronger under reverse biased, and photohole is mobile to graphene, and light induced electron then flows to silicon substrate,
Form photogenerated current.MSM photoelectric detector is interdigital structure in the present invention, can carry out ultraviolet imagery to its array.Light of the present invention
For electric explorer material therefor using silicon as basic material, preparation process is simple, at low cost, easily simultaneous with existing semiconductor standard processes
Hold.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of the graphene/silicon MSM-PD with low of flexible and transparent of the present invention；
Fig. 2 be in the present invention work of photodetector prepared by embodiment at -2-2V, under different incident optical powers
Light opens the optical response plot figure that lower device is closed with light；
(a) is equipment used in ultraviolet imagery in the present invention in Fig. 3；(b) it is labeled as the original image of ZJU；It (c) is ultraviolet lighting
Penetrate the lower figure that ZJU is presented；(d) it is labeled as the original image of ISEE；(e) figure for ISEE is presented under ultraviolet light.
Specific embodiment
A kind of work of the graphene/silicon MSM-PD with low of flexible and transparent provided by the invention is former
It manages as follows:
Incident light is irradiated to photodetector surfaces of the present invention, is absorbed by graphene and silicon substrate.The photoproduction current-carrying of generation
Sub (hole-electron pair) is separated under built-in electric field action, and direction of an electric field is directed toward graphene by silicon.Electric field is more under reverse biased
By force, photohole is mobile to graphene, and light induced electron then flows to silicon substrate, forms photogenerated current.Patterned silicon strip thickness is about
Brightness electricity can be effectively distinguished much smaller than the separation that the diffusion length (μm) of body silicon is conducive to photo-generated carrier for 200nm
Stream, improves the performance of photodetector.Graphene MSM detector of the invention can be transferred on PC film.
The present invention is further illustrated with reference to the accompanying drawings and examples.
A kind of graphene/silicon MSM-PD with low preparing above-mentioned flexible and transparent provided by the invention
Method, comprising the following steps:
(1) silicon thin film of SOI silicon substrate (1) is etched into rectangular silicon strip (3) using deep energy level reactive ion etching machine ICP,
The SOI silicon substrate (1) includes silicon thin film, silica separation layer (2) and silicon substrate (1) from top to bottom；
(2) it makes by lithography in silica separation layer (2) upper surface positioned at silicon strip (3) two sides and is parallel to the gold of silicon strip (3)
Then electrode pattern uses electron beam evaporation technique gold-plated electrode (4)；
(3) single crystal graphene film (5) are prepared in copper foil substrate using chemical vapor deposition method；
(4) single crystal graphene film (5) are covered in silica separation layer (2), silicon strip (3) and gold electrode (4) upper surface；
(5) single crystal graphene film (5) are patterned into interdigitation using photoetching technique, followed by plasma etching
Remove extra graphene, it is graphical after single crystal graphene film (5) the range surrounded in gold electrode (4) of coverage area
It is interior；
(6) PC film is covered in the patterned device upper surface that step (5) obtains, scrapes off edge PC film, and put BOE into
Silicon substrate (1) is etched away in etching liquid, prepares the ultra-thin graphene/silicon metal-semiconductor-metal photodetection of flexible and transparent
Device.
The graphene/silicon MSM-PD with low ultra-thin to above-mentioned flexible and transparent adds small bias, makes it
It works normally, adds different incident optical powers to realize gain, as shown in Figure 2.
Flexible and transparent prepared by the present embodiment graphene/silicon MSM-PD with low work-
Under 2-2V, the brightness current curve variation under the light irradiation of the different incident optical powers of 405nm is as shown in Figure 2.Wherein in device
Add small bias on the gold electrode 4 of part.Figure it is seen that prepared device is under no light condition, dark current very little；And work as
Incident wavelength 405nm, incident optical power generate apparent photoelectric current when being gradually increased to 0.4mW from 0.2 smooth function.As shown in Figure 2
When device works in -2-2V, curve is in smooth S type curve, i.e., back-to-back schottky junction characteristic curve.Discovery is tested simultaneously
Device all has very superior photodetection characteristic to near-infrared ultraviolet.
Fig. 3 is array type device in ultraviolet imagery figure, it can be seen that figure is apparent, and is had excellent performance.
Claims (3)
1. a kind of method for the graphene/silicon MSM-PD with low for preparing flexible and transparent, which is characterized in that
The following steps are included:
(1) silicon thin film of SOI silicon substrate (1) is etched rectangular silicon strip (3) using deep energy level reactive ion etching machine ICP, it is described
SOI silicon substrate (1) includes silicon thin film, silica separation layer (2) and silicon substrate (1) from top to bottom；
The silicon film thickness is 200 nm, and silicon strip (3) is with a thickness of 200 nm, and silica separation layer (2) is with a thickness of 100 nm；
(2) it makes by lithography in silica separation layer (2) upper surface positioned at silicon strip (3) two sides and is parallel to the gold electrode of silicon strip (3)
Then figure uses electron beam evaporation technique gold-plated electrode (4)；
(3) single crystal graphene film (5) are prepared in copper foil substrate using chemical vapor deposition method；
(4) single crystal graphene film (5) are covered in silica separation layer (2), silicon strip (3) and gold electrode (4) upper surface；
(5) single crystal graphene film (5) are patterned into interdigitation using photoetching technique, are removed followed by plasma etching
Extra graphene, it is graphical after single crystal graphene film (5) coverage area in the range of gold electrode (4) surround；
(6) PC film is covered in the patterned device upper surface that step (5) obtains, scrapes off edge PC film, and put BOE etching into
Silicon substrate (1) is etched away in liquid, prepares the ultra-thin graphene/silicon MSM-PD with low of flexible and transparent.
2. a kind of graphene/silicon metal-semiconductor-metal photodetection for preparing flexible and transparent according to claim 1
The method of device, which is characterized in that in the step (2), growth thickness is the chromium of 5 nm first on silica separation layer (2)
Then adhesion layer grows the gold electrode (4) of 60 nm.
3. a kind of graphene/silicon metal-semiconductor-metal photodetection for preparing flexible and transparent according to claim 1
The method of device, which is characterized in that in the step (4), the transfer method of graphene are as follows: by single crystal graphene film (5) surface
Uniformly one layer of polymethyl methacrylate film of coating, is then placed in 4h erosion removal copper foil in etching solution, leaves by poly- first
The single crystal graphene film (5) of base methyl acrylate support；The single crystal graphene film (5) that polymethyl methacrylate is supported
The upper surface of silica separation layer (2), silicon strip (3) and gold electrode (4) is transferred to after being cleaned with deionized water；Finally use dichloro
Methane and isopropanol remove polymethyl methacrylate；Wherein, the etching solution is made of CuSO4, HCl and water, CuSO4:
HCl:H2O=10g:50ml:50ml.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710423821.XA CN107146830B (en) | 2017-06-07 | 2017-06-07 | A method of preparing the graphene/silicon MSM-PD with low of flexible and transparent |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710423821.XA CN107146830B (en) | 2017-06-07 | 2017-06-07 | A method of preparing the graphene/silicon MSM-PD with low of flexible and transparent |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107146830A CN107146830A (en) | 2017-09-08 |
| CN107146830B true CN107146830B (en) | 2019-04-02 |
Family
ID=59780202
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710423821.XA Active CN107146830B (en) | 2017-06-07 | 2017-06-07 | A method of preparing the graphene/silicon MSM-PD with low of flexible and transparent |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107146830B (en) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108257946B (en) * | 2017-11-30 | 2020-05-12 | 中国科学院微电子研究所 | Photoelectric detector and manufacturing method thereof |
| CN108054180A (en) * | 2018-01-29 | 2018-05-18 | 杭州紫元科技有限公司 | A kind of charge coupling device based on graphene/insulating layer/semiconductor structure |
| CN108281453A (en) * | 2018-01-29 | 2018-07-13 | 杭州紫元科技有限公司 | A kind of flexibility charge coupling device and preparation method thereof |
| CN108281443B (en) * | 2018-01-29 | 2021-05-11 | 杭州紫元科技有限公司 | Graphene/silicon heterojunction CCD pixel array based on SOI substrate and preparation method thereof |
| CN111952402B (en) * | 2020-08-26 | 2023-04-25 | 合肥工业大学 | Color detector based on graphene/ultrathin silicon/graphene heterojunction and preparation method thereof |
| CN113782640B (en) * | 2021-09-10 | 2023-02-21 | 中国科学院半导体研究所 | Preparation method and system of detector chip based on graphene-CMOS monolithic integration |
| CN114864736A (en) * | 2022-02-24 | 2022-08-05 | 电子科技大学 | Novel exciton regulating device based on two-dimensional transition metal sulfide semiconductor and preparation method and regulating method thereof |
| CN114583003B (en) * | 2022-04-29 | 2022-10-11 | 浙江大学 | Vertical photoelectric detector based on silicon/graphene nano-film/germanium and preparation method |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2005106933A1 (en) * | 2004-04-28 | 2005-11-10 | Iufc-Hyu | Flexible single-crystal film and method of manufacturing the same |
| CN104810411B (en) * | 2014-01-24 | 2018-07-06 | 中国科学院上海微系统与信息技术研究所 | A kind of photoconductive UV detector and preparation method thereof |
| CN104810427B (en) * | 2014-01-26 | 2017-10-03 | 中国科学院苏州纳米技术与纳米仿生研究所 | Based on enhanced ultraviolet detector of surface acoustic wave and preparation method thereof |
| CN104157721B (en) * | 2014-08-08 | 2016-08-31 | 浙江大学 | Avalanche photodetector based on graphene/silicon/Graphene and preparation method thereof |
| CN104300028B (en) * | 2014-08-08 | 2017-02-15 | 浙江大学 | Ultraviolet avalanche photodetector taking fluorinated graphene as absorbing layer and preparation method |
| CN104157722B (en) * | 2014-08-18 | 2016-05-18 | 浙江大学 | A kind of silicon-Graphene avalanche photodetector |
-
2017
- 2017-06-07 CN CN201710423821.XA patent/CN107146830B/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| CN107146830A (en) | 2017-09-08 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN107146830B (en) | A method of preparing the graphene/silicon MSM-PD with low of flexible and transparent | |
| CN107452823B (en) | A kind of micro wire array photo detector and preparation method thereof | |
| CN106784122B (en) | Photodetector and preparation method based on graphene/boron-doping silicon quantum dot/silicon | |
| CN106601857B (en) | Photoconductive detector and preparation method based on boron-doping silicon quantum dot/graphene/silicon dioxide | |
| CN106169516B (en) | A kind of silicon substrate UV photodetector based on graphene and preparation method thereof | |
| CN104157721B (en) | Avalanche photodetector based on graphene/silicon/Graphene and preparation method thereof | |
| CN105814695A (en) | Nano-structured multi-junction photovoltaic devices | |
| CN107221575B (en) | Near-infrared detector based on two-dimensional material vertical Schottky junction and preparation method | |
| CN104300027B (en) | Avalanche photodetector based on graphene/silicon dioxide/silicon and preparation method | |
| CN111341875B (en) | Graphene/palladium diselenide/silicon heterojunction self-driven photoelectric detector | |
| US20140252313A1 (en) | Nanolens arrays in nanopillar optoelectronic devices | |
| CN107154438A (en) | It is a kind of to be fluorinated ultraviolet avalanche photodetector of the nitrogen-doped graphene as absorbed layer | |
| CN105720197A (en) | Self-driven wide-spectral-response silicon-based hybrid heterojunction photoelectric sensor and preparation method therefor | |
| KR20210046641A (en) | 3-dimensional photodetector device and method of manufacturing thereof | |
| KR101363327B1 (en) | Thin film type Solar Cell and Method for manufacturing the same | |
| CN113964230A (en) | Stannous selenide sulfide nanosheet/GaAs heterojunction photodiode and preparation method and application thereof | |
| KR101076355B1 (en) | Solar cell and manufacturing method of the same | |
| KR101476125B1 (en) | Thin film type Solar Cell and Method for manufacturing the same | |
| CN210866245U (en) | Gallium nitride micron line array photoelectric detector | |
| CN108649095B (en) | Nano-crystal structure carbon film-based field effect tube structure photoelectric device and preparation method thereof | |
| KR100937140B1 (en) | High Efficiency Solar Cell | |
| CN111063752B (en) | Thickness-regulated Schottky junction inorganic narrow-band photoelectric detector and preparation method thereof | |
| CN111341874A (en) | Self-driven broadband photoelectric detector based on Si micropore/CuO vertical structure heterojunction and preparation method thereof | |
| Karaağaç et al. | One-Dimensional Silicon Nano-/microstructures Based Opto-Electronic Devices | |
| RU2568421C1 (en) | SOLAR CELL BUILT AROUND p-TYPE HETEROSTRUCTURE OF AMORPHOUS AND NANOCRYSTALLINE SILICON NITRIDE - SILICON |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |