CN107046085B - A kind of production method of light emitting diode chip with vertical - Google Patents
A kind of production method of light emitting diode chip with vertical Download PDFInfo
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- CN107046085B CN107046085B CN201710296450.3A CN201710296450A CN107046085B CN 107046085 B CN107046085 B CN 107046085B CN 201710296450 A CN201710296450 A CN 201710296450A CN 107046085 B CN107046085 B CN 107046085B
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 39
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 214
- 229910002601 GaN Inorganic materials 0.000 claims abstract description 104
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims abstract description 104
- 239000013078 crystal Substances 0.000 claims abstract description 82
- 239000000758 substrate Substances 0.000 claims abstract description 59
- 238000001312 dry etching Methods 0.000 claims abstract description 30
- 238000001039 wet etching Methods 0.000 claims description 26
- 238000004528 spin coating Methods 0.000 claims description 21
- 239000003292 glue Substances 0.000 claims description 14
- 238000001259 photo etching Methods 0.000 claims description 9
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 7
- 239000000126 substance Substances 0.000 claims description 7
- 238000000034 method Methods 0.000 abstract description 22
- 230000008569 process Effects 0.000 abstract description 7
- 239000004065 semiconductor Substances 0.000 abstract description 3
- 239000007789 gas Substances 0.000 description 13
- 229910052594 sapphire Inorganic materials 0.000 description 10
- 239000010980 sapphire Substances 0.000 description 10
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 238000005530 etching Methods 0.000 description 6
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 229910052733 gallium Inorganic materials 0.000 description 5
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 description 4
- 230000003628 erosive effect Effects 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000005484 gravity Effects 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- RGGPNXQUMRMPRA-UHFFFAOYSA-N triethylgallium Chemical compound CC[Ga](CC)CC RGGPNXQUMRMPRA-UHFFFAOYSA-N 0.000 description 2
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 2
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 2
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000013256 coordination polymer Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 239000007792 gaseous phase Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 150000002902 organometallic compounds Chemical class 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 1
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
The invention discloses a kind of production methods of light emitting diode chip with vertical, belong to technical field of semiconductors.It include: that a transfer base substrate for being equipped with multiple crystal grain is provided, multiple crystal grain are distributed on the same surface of transfer base substrate；Photoresist is coated on the surface that transfer base substrate is equipped with multiple crystal grain, photoresist includes the first photoresist on multiple crystal grain and the second photoresist on transfer base substrate, and the thickness of the second photoresist is greater than the sum of p-type gallium nitride layer, multiple quantum well layer, n type gallium nitride layer and thickness of the first photoresist；Dry etching is carried out to photoresist, until completely removing the first photoresist；To the buffer layer and undoped gallium nitride layer progress dry etching in multiple crystal grain, until completely removing buffer layer and undoped gallium nitride layer；Remove remaining second photoresist on transfer base substrate；Electrode is formed on the n type gallium nitride layer in each crystal grain respectively, forms light emitting diode chip with vertical.Present invention process is simple, realizes and is easy.
Description
Technical field
The present invention relates to technical field of semiconductors, in particular to a kind of production side of light emitting diode chip with vertical
Method.
Background technique
Light emitting diode (English: Light Emitting Diode, referred to as: LED) it is a kind of semi-conductor electricity that can be luminous
Subcomponent.The structure of LED mainly includes positive assembling structure, inverted structure and vertical structure at present.Wherein, the two of vertical structure LED
A electrode is respectively in the two sides of epitaxial layer, and after two electrodes are powered, electric current is flowed vertically through relative to the stacking direction of epitaxial layer
Epitaxial layer.
The production method of existing light emitting diode (LED) chip with vertical structure includes: growing gallium nitride epitaxial layer on a sapphire substrate, nitridation
Gallium epitaxial layer includes the buffer layer stacked gradually, undoped gallium nitride layer, n type gallium nitride layer, multiple quantum well layer and p-type gallium nitride
Layer；P-type gallium nitride layer is bonded on transfer base substrate by metal, and Sapphire Substrate is removed using laser lift-off technique；Benefit
Photoresist is formed on the side wall of epitaxial layer of gallium nitride with photoetching technique；The etch nitride gallium epitaxial layer under the protection of photoresist,
Remove buffer layer and undoped gallium nitride layer；Electrode is set on n type gallium nitride layer, forms light emitting diode (LED) chip with vertical structure.Wherein,
Transfer base substrate is made of conductive material, is the P-type electrode of LED chip, and the electrode being arranged on n type gallium nitride layer is LED chip
N-type electrode.
In the implementation of the present invention, the inventor finds that the existing technology has at least the following problems:
Photoetching technique is in the pattern transfer to photoresist by mask plate, using photoetching technique in the side of epitaxial layer of gallium nitride
When forming photoresist on wall, the figure and epitaxial layer of gallium nitride of mask plate are oppositely arranged, and if there is dislocation, then photoresist can not
It is covered on the entire side wall of epitaxial layer of gallium nitride, when subsequent etching epitaxial layer of gallium nitride, photoresist cannot be to epitaxy of gallium nitride
The side wall of layer is effectively protected, and LED chip production failure is caused, therefore to the more demanding of technique, is realized difficult.
Summary of the invention
In order to solve the prior art to the more demanding of technique, difficult problem is realized, the embodiment of the invention provides one
The production method of kind light emitting diode chip with vertical.The technical solution is as follows:
The embodiment of the invention provides a kind of production method of light emitting diode chip with vertical, the production method packet
It includes:
A transfer base substrate for being equipped with multiple crystal grain is provided, the multiple crystal grain is distributed in the same of the transfer base substrate
On surface, each crystal grain includes the p-type gallium nitride layer, multiple quantum well layer, N-type nitrogen being sequentially laminated on the transfer base substrate
Change gallium layer, undoped gallium nitride layer and buffer layer；
Photoresist is coated on the surface that the transfer base substrate is equipped with the multiple crystal grain, the photoresist includes positioned at described
The second photoresist on the first photoresist on multiple crystal grain and the transfer base substrate between the multiple crystal grain, it is described
The thickness of second photoresist is greater than the p-type gallium nitride layer, the multiple quantum well layer, the n type gallium nitride layer and described first
The sum of thickness of photoresist；
Dry etching is carried out to the photoresist, until completely removing first photoresist, second light of removing
The thickness of photoresist is less than or equal to the thickness of first photoresist；
To the buffer layer and undoped gallium nitride layer progress dry etching in the multiple crystal grain, until completely
Remove the buffer layer and the undoped gallium nitride layer；
Remove remaining second photoresist on the transfer base substrate；
Electrode is formed on the n type gallium nitride layer in each crystal grain respectively, forms two pole of vertical structure light-emitting
Tube chip.
It is optionally, described to coat photoresist on the surface that the transfer base substrate is equipped with the multiple crystal grain, comprising:
Photoresist is coated on the surface that the transfer base substrate is equipped with the multiple crystal grain by the way of spin coating, spin coating turns
Speed is 500~5000rpm.
Optionally, the thickness of second photoresist is greater than the thickness of the crystal grain.
Preferably, second photoresist with a thickness of 5~8 μm.
Optionally, when the photoresist is positive photoresist, the production method further include:
To the photoresist carry out dry etching before, in the case where no mask plate shielding to the photoresist into
Row exposure；
Spin coating developer solution on the photoresist after exposure, or the photoresist after exposure is immersed in developer solution
In, using photoresist described in the developer solution wet etching, and stop wet process corruption before first photoresist completely removes
Erosion.
Optionally, when the photoresist is negative photoresist, the production method further include:
Before carrying out dry etching to the photoresist, the spin coating developer solution on the photoresist, or by the light
Photoresist is impregnated in developer solution, is removed completely using photoresist described in the developer solution wet etching, and in first photoresist
Stop wet etching before going.
Optionally, the production method further include:
Before carrying out dry etching to the photoresist, glue is removed in spin coating on the photoresist, or by the light
Photoresist is immersed in glue, removes photoresist described in glue wet etching using described, and remove completely in first photoresist
Stop wet etching before going.
Preferably, when a length of 10~60s of wet etching.
Preferably, the revolving speed of spin coating is 100~4000rpm.
Optionally, the production method further include:
It is removed on the transfer base substrate before remaining second photoresist described, in the multiple crystal grain and described
Indium tin oxide films are formed on second photoresist.
Technical solution provided in an embodiment of the present invention has the benefit that
Second is formed by forming the first photoresist on multiple crystal grain, while on the transfer base substrate between multiple crystal grain
Photoresist, since photoresist is intermediate state substance between a solid and a liquid, photoresist can incline under the effect of gravity
To on the transfer base substrate being deposited between multiple crystal grain, cause the second photoresist thickness be greater than the first photoresist and crystal grain
The sum of middle p-type gallium nitride layer, multiple quantum well layer and thickness of n type gallium nitride layer.Then dry etching is carried out to photoresist, due to
The thickness of the second photoresist and the thickness of the first photoresist that dry etching removes usually all are identical, therefore the first photoresists
When completely removing, the thickness of remaining second photoresist is greater than the thickness of p-type gallium nitride layer, multiple quantum well layer and n type gallium nitride layer
The sum of degree, can be completely covered on the side wall of p-type gallium nitride layer, multiple quantum well layer and n type gallium nitride layer.Again to multiple crystal grain
In buffer layer and undoped gallium nitride layer carry out dry etching, the second photoresist is to p-type gallium nitride layer, multiple quantum well layer and N
The side wall of type gallium nitride layer is completely protected, and effectively avoids LED chip easy to make.And remaining second photoresist is
By deposition and dry etching self-assembling formation, do not need the figure of mask plate and grain alignment to turn the figure of mask plate
It moves on on photoresist, therefore there is no the requirement precisely aligned, simple process is realized and is easy.
Detailed description of the invention
To describe the technical solutions in the embodiments of the present invention more clearly, make required in being described below to embodiment
Attached drawing is briefly described, it should be apparent that, drawings in the following description are only some embodiments of the invention, for
For those of ordinary skill in the art, without creative efforts, it can also be obtained according to these attached drawings other
Attached drawing.
Fig. 1 is a kind of flow chart of the production method of light emitting diode chip with vertical provided in an embodiment of the present invention；
Fig. 2 a- Fig. 2 i is that the structure in light emitting diode chip with vertical manufacturing process provided in an embodiment of the present invention is shown
It is intended to.
Specific embodiment
To make the object, technical solutions and advantages of the present invention clearer, below in conjunction with attached drawing to embodiment party of the present invention
Formula is described in further detail.
Embodiment
The embodiment of the invention provides a kind of production methods of light emitting diode chip with vertical, referring to Fig. 1, the production
Method includes:
Step 101: providing a transfer base substrate for being equipped with multiple crystal grain, multiple crystal grain are distributed in the same of transfer base substrate
On surface, each crystal grain include the p-type gallium nitride layer being sequentially laminated on transfer base substrate, multiple quantum well layer, n type gallium nitride layer,
Undoped gallium nitride layer and buffer layer.
It should be noted that crystal grain is internal structure cell direction and position is almost the same and the irregular small crystals of shape,
In the present embodiment, crystal grain refers in particular to the crystal being epitaxially-formed in light emitting diode, specifically includes the buffer layer being stacked, not
Doped gallium nitride, n type gallium nitride layer, multiple quantum well layer and p-type gallium nitride layer.
Specifically, which may include:
One, successively grown buffer layer, undoped gallium nitride layer, n type gallium nitride layer, multiple quantum well layer on a sapphire substrate
With p-type gallium nitride layer；
Two, several grooves for extending to Sapphire Substrate from p-type gallium nitride layer are formed, multiple crystal grain are obtained；
Three, the p-type gallium nitride layer in multiple crystal grain is bonded to the same surface of transfer base substrate using metal bonding technology
On；
Four, Sapphire Substrate is removed from the buffer layer in multiple crystal grain using laser lift-off technique.
Fig. 2 a- Fig. 2 d is followed successively by the structural representation of light-emitting diode chip for backlight unit after first step is executed to the 4th step
Figure.Wherein, 1 Sapphire Substrate is indicated, 2 indicate buffer layer, and 3 indicate undoped gallium nitride layer, and 4 indicate n type gallium nitride layer, 5 tables
Show multiple quantum well layer, 6 indicate p-type gallium nitride layer, and 10 indicate groove, and 20 indicate crystal grain, and 7 indicate transfer base substrate.
As shown in Figure 2 a, after first step executes, buffer layer 2, undoped gallium nitride layer 3, n type gallium nitride layer 4,
Multiple quantum well layer 5 and p-type gallium nitride layer 6 are layered in Sapphire Substrate 1.
As shown in Figure 2 b, second step execution after, buffer layer 2, undoped gallium nitride layer 3, n type gallium nitride layer 4,
The entirety that multiple quantum well layer 5 and p-type gallium nitride layer 6 are formed is multiple portions along the direction cutting perpendicular to stacking direction by groove 10
Point, each part is a crystal grain 20, mutually indepedent between each crystal grain 20.
As shown in Figure 2 c, after the execution of third step, multiple crystal grain 20 are all disposed within a surface of transfer base substrate 7
On.
As shown in Figure 2 d, after the 4th step executes, Sapphire Substrate 1 is removed from multiple crystal grain 20, only remaining
Buffer layer 2, undoped gallium nitride layer 3, n type gallium nitride layer 4, multiple quantum well layer 5, p-type gallium nitride layer 6 and transfer base substrate 7.
In practical applications, in a first step, Sapphire Substrate can be put into Veeco K465i or C4 metal
Organic compound chemical gaseous phase deposition (English: Metal Organic Chemical Vapor Deposition, referred to as:
MOCVD) grown buffer layer, undoped gallium nitride layer, n type gallium nitride layer, multiple quantum well layer and p-type gallium nitride layer in equipment.Tool
Body can use high-purity hydrogen (H2) or high pure nitrogen (N2) or high-purity H2And high-purity N2Mixed gas as carrier gas, high-purity N H3
As nitrogen source, trimethyl gallium (TMGa) and triethyl-gallium (TEGa) are used as gallium source, and trimethyl indium (TMIn) is used as indium source, trimethyl
Aluminium (TMAl) is used as silicon source, and silane (SiH4) is used as N type dopant, two luxuriant magnesium (CP2Mg) it is used as P-type dopant.React chamber pressure
Power is controlled in 100~600torr.
In second step, it can first use photoetching technique on p-type gallium nitride layer in addition to groove position
Region forms photoresist, then be sequentially etched under the protection of photoresist p-type gallium nitride layer, multiple quantum well layer, n type gallium nitride layer,
Undoped gallium nitride layer and buffer layer form several grooves for extending to Sapphire Substrate from p-type gallium nitride layer, finally remove light
Photoresist.
Step 102: coating photoresist on the surface that transfer base substrate is equipped with multiple crystal grain, photoresist includes being located at multiple crystal grain
On the first photoresist and the second photoresist on transfer base substrate between multiple crystal grain, the thickness of the second photoresist be greater than
The sum of p-type gallium nitride layer, multiple quantum well layer, n type gallium nitride layer and thickness of the first photoresist.
It should be noted that photoresist is intermediate state substance between a solid and a liquid, there is certain mobility,
It can be moved down into the groove beside crystal grain under gravity coated in the photoresist on crystal grain, finally be deposited on groove
It on interior transfer base substrate, is filled up until by groove, while photoresist is not complete liquid, the surface of the first photoresist and
It the surface of two photoresists will not be in same plane, since the crystal grain where the first photoresist is than the transfer base where the second photoresist
Plate is high, therefore the surface of final second photoresist can be lower than the surface of the first photoresist, i.e. the thickness of the second photoresist is greater than crystalline substance
The thickness of grain and less than the sum of the first photoresist and the thickness of crystal grain, such as the thickness of the second photoresist is than the first photoresist and crystal grain
The sum of thickness it is 5 μm small.In practical applications, in order to make remaining second photoresist be completely covered on p-type gallium nitride layer, volume
Sub- well layer, n type gallium nitride layer side wall on (be detailed in step 104), therefore be greater than p-type nitrogen by the thickness limit of the second photoresist
Change the sum of gallium layer, multiple quantum well layer, n type gallium nitride layer and thickness of the first photoresist.
Fig. 2 e is the structural schematic diagram of light emitting diode after step 102 executes.Wherein, 8 photoresist is indicated.Such as Fig. 2 e institute
Show, the thickness of the photoresist 8 (i.e. the second photoresist) on transfer base substrate 7 is less than the photoresist 8 (i.e. the on crystal grain 20 and crystal grain 20
One photoresist) the sum of thickness.
Optionally, which may include:
Photoresist is coated on the surface that transfer base substrate is equipped with multiple crystal grain by the way of spin coating, the revolving speed of spin coating can be
500~5000rpm.When the revolving speed of spin coating is less than 500rpm, the photoresist being deposited on crystal grain is thicker, will cause the wave of material
Take；When the revolving speed of spin coating is greater than 5000rpm, the photoresist being deposited on crystal grain is relatively thin, is unfavorable for photoresist and is transferred to transfer
On substrate.
Preferably, the thickness of the second photoresist can be greater than the thickness of crystal grain, to be formed completely to the side wall of crystal grain
It blocks, the side wall of crystal grain is adequately protected when etching crystal grain and (is detailed in step 104).
Specifically, the thickness of the second photoresist can be 5~10 μm.The thickness of crystal grain is usually 5~7 μm or so, transfer
The thickness of the photoresist deposited on substrate is greater than 5 μm, can adequately be protected when etching crystal grain to the side wall of crystal grain, together
When transfer base substrate on the thickness of photoresist that deposits less than 10 μm, avoid the abuse of photoresist, save cost of manufacture.
Step 103: dry etching being carried out to photoresist, until completely removing the first photoresist, the second photoresist of removing
Thickness be less than or equal to the first photoresist thickness.
Fig. 2 f is the structural schematic diagram of light emitting diode after step 103 executes.As shown in figure 2f, the photoetching on crystal grain 20
Glue 8 (i.e. the first photoresist) is completely removed, and the photoresist 8 (i.e. the second photoresist) on transfer base substrate 7 leaves part.
In the present embodiment, which may include:
It is passed through first gas and dry etching is carried out to photoresist.
Specifically, first gas can be oxygen or carbon tetrafluoride or fluoroform or oxygen and tetrafluoride
The mixed gas or oxygen of carbon and the mixed gas of fluoroform.
It,, should before step 103 when photoresist is positive photoresist in the first implementation of the present embodiment
Production method can also include:
Photoresist is exposed in the case where no mask plate shielding；
Spin coating developer solution on photoresist after exposure, or the photoresist after exposure is impregnated in developer solution, it utilizes
Developer solution wet etching photoresist, and stop wet etching before the first photoresist completely removes.
In the present embodiment, photoresist is removed by the way of exposure and imaging, can by control light exposure number,
Control the thickness of the photoresist of removal.
Preferably, the energy being exposed can be 30~200mj/cm2.When the energy being exposed is less than 30mj/cm2
When, exposure effect is unobvious, can not effectively remove photoresist；When the energy being exposed is greater than 200mj/cm2When, it is exposed
It spends, the photoresist on crystal grain side wall is also removed, and can not be had in the etching process of buffer layer and undoped gallium nitride layer
Effect protection.
In second of implementation of the present embodiment, when photoresist is negative photoresist, before step 103, the system
Make method further include:
Spin coating developer solution on a photoresist, or photoresist is impregnated in developer solution, utilize developer solution wet etching light
Photoresist, and stop wet etching before the first photoresist completely removes.
Be readily apparent that, negative photoresist and positive photoresist on the contrary, be soluble substance when negative photoresist is no illumination,
Therefore developer solution can be directly used, wet etching is carried out to photoresist.
In the third implementation of the present embodiment, before step 103, which can also include:
Glue is removed in spin coating on a photoresist, or photoresist is immersed in glue, using removing glue wet etching light
Photoresist, and stop wet etching before the first photoresist completely removes.
In the third implementation, positive photoresist and negative photoresist can be applicable in, and applicable surface is wider.
It should be noted that since the rate of dry etching photoresist is very low, if using dry etching photoresist completely,
It will cause entire Production Time is too long, production efficiency is low.The first of the present embodiment is into the third implementation, dry
Before method etches photoresist, first (using developer solution or removing glue) removes part photoresist by the way of wet etching, can
To greatly improve the removal rate of photoresist, shorten Production Time, improves production efficiency.Under normal circumstances, simple dry etching
Need 20~70 minutes time to remove photoresist, the mode of dry etching combination wet etching can by remove photoresist when
Between foreshorten to 10~30 minutes.In addition, wet etching is unable to accurately control the removal progress of photoresist, in wet etching photoetching
Glue and then use dry etching, may be implemented on crystal grain photoresist (i.e. the first photoresist) removal it is complete when just stop
Only, photoresist (i.e. the second photoresist) excessive erosion on transfer base substrate is avoided.
Optionally, the present embodiment the first into the third implementation, the duration of wet etching can for 10~
60s.When the duration of wet etching is less than 10s, the photoresist of removal is less, can not effectively improve production efficiency；When wet process corruption
When the duration of erosion is greater than 60s, it is be easy to cause excessive erosion, the photoresist on crystal grain side wall is also removed, can not in buffer layer and not
It is effectively protected in the etching process of doped gallium nitride layer.
Optionally, the revolving speed of spin coating can be 100~4000rpm.It is experimentally confirmed that the revolving speed of spin coating is 100~4000rpm
When, developer solution or go the coating zone effect of glue preferable.
Step 104: to the buffer layer and undoped gallium nitride layer progress dry etching in multiple crystal grain, until completely removing
Buffer layer and undoped gallium nitride layer.
Fig. 2 g is the structural schematic diagram of light emitting diode after step 104 executes.As shown in Figure 2 g, it buffer layer 2 and does not mix
Miscellaneous gallium nitride layer 3 is completely removed, and leaves n type gallium nitride layer 4, multiple quantum well layer 5 and p-type gallium nitride layer 6.
In the present embodiment, which may include:
Second gas is passed through to the buffer layer and undoped gallium nitride layer progress dry etching in multiple crystal grain, second gas
For the gas different from first gas.
Specifically, second gas may include at least one of chlorine, boron chloride, argon gas.
It should be noted that during second gas dry etching buffer layer and undoped gallium nitride layer, the second gas
Body can also perform etching photoresist.
Step 105: removing remaining second photoresist on transfer base substrate.
Fig. 2 h is the structural schematic diagram of light emitting diode after step 105 executes.As shown in fig. 2h, photoresist 8 is complete
Removal.
Optionally, before the step 105, which can also include:
Indium tin oxide films are formed on multiple crystal grain and the second photoresist.
Correspondingly, after the step 105, indium tin oxide films on the second photoresist can with the second photoresist together from
It is removed on transfer base substrate, leaves the indium tin oxide films on n type gallium nitride layer, electrode is formed in the indium tin oxide films left
On.
It should be noted that indium tin oxide films can help electrode extension electric current, therefore the setting of electrode can be reduced
Area reduces the light that electrode absorbs, increases light out.
Step 106: forming electrode on the n type gallium nitride layer in each crystal grain respectively, form two pole of vertical structure light-emitting
Tube chip.
Fig. 2 i is the structural schematic diagram of light emitting diode after step 106 executes.Wherein, 9 electrode is indicated.Such as Fig. 2 h institute
Show, transfer base substrate 7, p-type gallium nitride layer 6, multiple quantum well layer 5, n type gallium nitride layer 4 and electrode 9 form luminous the two of vertical structure
Pole pipe.
In practical applications, metal layer can be first formed on n type gallium nitride layer and transfer base substrate, then uses photoetching technique
The photoresist for forming setting figure on the metal layer then etches the metal of no photoresist protection under the protection of photoresist
Layer, the metal layer left is electrode, finally removes photoresist.Since the edge of electrode does not need and electrode is arranged
The edge of n type gallium nitride layer is perfectly aligned, therefore the requirement to photoetching technique does not remove undoped gallium nitride and buffer layer is high,
Technique realization is simultaneously uncomplicated.
The embodiment of the present invention on multiple crystal grain by forming the first photoresist, while the transfer base between multiple crystal grain
The second photoresist is formed on plate, since photoresist is intermediate state substance between a solid and a liquid, photoresist is in weight
Power effect is lower to be tended to deposit on the transfer base substrate between multiple crystal grain, and the thickness of the second photoresist is caused to be greater than the first light
The sum of p-type gallium nitride layer, multiple quantum well layer and thickness of n type gallium nitride layer in photoresist and crystal grain.Then photoresist is carried out
Dry etching, due to dry etching remove the thickness of the second photoresist and the thickness of the first photoresist be usually all it is identical,
Therefore when the first photoresist completely removes, the thickness of remaining second photoresist is greater than p-type gallium nitride layer, multiple quantum well layer and N
The sum of the thickness of type gallium nitride layer, can be completely covered on the side wall of p-type gallium nitride layer, multiple quantum well layer and n type gallium nitride layer
On.Again to the buffer layer and undoped gallium nitride layer progress dry etching in multiple crystal grain, the second photoresist is to p-type gallium nitride
The side wall of layer, multiple quantum well layer and n type gallium nitride layer is completely protected, and effectively avoids LED chip easy to make.And it is surplus
Under the second photoresist be by deposition and dry etching self-assembling formation, do not need by the figure of mask plate and grain alignment with
By in the pattern transfer to photoresist of mask plate, therefore there is no the requirement precisely aligned, simple process is realized and is easy.
The foregoing is merely presently preferred embodiments of the present invention, is not intended to limit the invention, it is all in spirit of the invention and
Within principle, any modification, equivalent replacement, improvement and so on be should all be included in the protection scope of the present invention.
Claims (10)
1. a kind of production method of light emitting diode chip with vertical, which is characterized in that the production method includes:
A transfer base substrate for being equipped with multiple crystal grain is provided, the multiple crystal grain is distributed in the same surface of the transfer base substrate
On, each crystal grain includes p-type gallium nitride layer, multiple quantum well layer, the n type gallium nitride being sequentially laminated on the transfer base substrate
Layer, undoped gallium nitride layer and buffer layer；
Photoresist is coated on the surface that the transfer base substrate is equipped with the multiple crystal grain, the photoresist includes positioned at the multiple
The second photoresist on the first photoresist on crystal grain and the transfer base substrate between the multiple crystal grain, described second
The thickness of photoresist is greater than the p-type gallium nitride layer, the multiple quantum well layer, the n type gallium nitride layer and first photoetching
The sum of thickness of glue；
Dry etching is carried out to the photoresist, until completely removing first photoresist, second photoresist of removing
Thickness be less than or equal to first photoresist thickness；
To the buffer layer and undoped gallium nitride layer progress dry etching in the multiple crystal grain, until completely removing
The buffer layer and the undoped gallium nitride layer；
Remove remaining second photoresist on the transfer base substrate；
Electrode is formed on the n type gallium nitride layer in each crystal grain respectively, forms light emitting diode with vertical structure core
Piece.
2. manufacturing method according to claim 1, which is characterized in that described to be equipped with the multiple crystalline substance in the transfer base substrate
The surface of grain coats photoresist, comprising:
Photoresist is coated on the surface that the transfer base substrate is equipped with the multiple crystal grain by the way of spin coating, the revolving speed of spin coating is
500~5000rpm.
3. production method according to claim 1 or 2, which is characterized in that the thickness of second photoresist is greater than described
The thickness of crystal grain.
4. production method according to claim 3, which is characterized in that second photoresist with a thickness of 5~8 μm.
5. manufacturing method according to claim 1, which is characterized in that described when the photoresist is positive photoresist
Production method further include:
It is described to the photoresist carry out dry etching before, in the case where no mask plate shielding to the photoresist into
Row exposure；
Spin coating developer solution on the photoresist after exposure, or the photoresist after exposure is impregnated in developer solution,
Stop wet etching using photoresist described in the developer solution wet etching, and before first photoresist completely removes.
6. manufacturing method according to claim 1, which is characterized in that described when the photoresist is negative photoresist
Production method further include:
It is described dry etching is carried out to the photoresist before, the spin coating developer solution on the photoresist, or by the light
Photoresist is impregnated in developer solution, is removed completely using photoresist described in the developer solution wet etching, and in first photoresist
Stop wet etching before going.
7. manufacturing method according to claim 1, which is characterized in that the production method further include:
It is described dry etching is carried out to the photoresist before, glue is removed in spin coating on the photoresist, or by the light
Photoresist is immersed in glue, removes photoresist described in glue wet etching using described, and remove completely in first photoresist
Stop wet etching before going.
8. the production method according to any one of claim 5~7, which is characterized in that wet etching when it is a length of 10~
60s。
9. the production method according to any one of claim 5~7, which is characterized in that the revolving speed of spin coating be 100~
4000rpm。
10. according to claim 1~2, production method described in any one of 5~7, which is characterized in that the production method is also
Include:
It removes described on the transfer base substrate before remaining second photoresist, in the multiple crystal grain and described second
Indium tin oxide films are formed on photoresist.
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| JP5091233B2 (en) * | 2006-06-23 | 2012-12-05 | エルジー エレクトロニクス インコーポレイティド | Vertical light emitting device and manufacturing method thereof |
| CN102104233A (en) * | 2010-12-31 | 2011-06-22 | 华灿光电股份有限公司 | High-reflectivity light-emitting diode chip with vertical structure and preparation method thereof |
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