CN107026627A - Orthogonal array nano-pillar FBAR and preparation method thereof and wave filter - Google Patents
Orthogonal array nano-pillar FBAR and preparation method thereof and wave filter Download PDFInfo
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- CN107026627A CN107026627A CN201611135805.2A CN201611135805A CN107026627A CN 107026627 A CN107026627 A CN 107026627A CN 201611135805 A CN201611135805 A CN 201611135805A CN 107026627 A CN107026627 A CN 107026627A
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- 239000002061 nanopillar Substances 0.000 title claims abstract description 51
- 238000002360 preparation method Methods 0.000 title claims description 9
- 239000000758 substrate Substances 0.000 claims abstract description 32
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 15
- 239000010703 silicon Substances 0.000 claims abstract description 15
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 15
- 125000006850 spacer group Chemical group 0.000 claims abstract description 15
- 239000000463 material Substances 0.000 claims abstract description 12
- 238000011049 filling Methods 0.000 claims abstract description 3
- 238000005530 etching Methods 0.000 claims description 13
- 238000001312 dry etching Methods 0.000 claims description 10
- 239000002184 metal Substances 0.000 claims description 10
- 238000003491 array Methods 0.000 claims description 9
- 238000005498 polishing Methods 0.000 claims description 7
- 238000004528 spin coating Methods 0.000 claims description 7
- 230000015572 biosynthetic process Effects 0.000 claims description 6
- 239000000126 substance Substances 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 5
- 238000006243 chemical reaction Methods 0.000 claims description 4
- 238000000034 method Methods 0.000 claims description 4
- -1 siloxanes Chemical class 0.000 claims description 4
- 229910004205 SiNX Inorganic materials 0.000 claims description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 3
- 229910052681 coesite Inorganic materials 0.000 claims description 3
- 229910052593 corundum Inorganic materials 0.000 claims description 3
- 229910052906 cristobalite Inorganic materials 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 229910052682 stishovite Inorganic materials 0.000 claims description 3
- 229910052905 tridymite Inorganic materials 0.000 claims description 3
- 229910001845 yogo sapphire Inorganic materials 0.000 claims description 3
- 238000013517 stratification Methods 0.000 claims description 2
- 239000004642 Polyimide Substances 0.000 claims 1
- 230000005611 electricity Effects 0.000 claims 1
- 229920001721 polyimide Polymers 0.000 claims 1
- 230000007547 defect Effects 0.000 abstract description 2
- 230000003071 parasitic effect Effects 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 59
- 238000001020 plasma etching Methods 0.000 description 12
- 238000005516 engineering process Methods 0.000 description 11
- 239000010408 film Substances 0.000 description 9
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 6
- 239000012528 membrane Substances 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 239000004952 Polyamide Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 238000005566 electron beam evaporation Methods 0.000 description 2
- 238000001914 filtration Methods 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 229920002647 polyamide Polymers 0.000 description 2
- IGELFKKMDLGCJO-UHFFFAOYSA-N xenon difluoride Chemical compound F[Xe]F IGELFKKMDLGCJO-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
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- 238000004544 sputter deposition Methods 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezo-electric or electrostrictive material
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H2003/023—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks being of the membrane type
Abstract
The invention discloses orthogonal array nano-pillar FBAR, successively including silicon substrate, cavity and piezo-electric stack structure, the cavity is formed between silicon substrate and piezo-electric stack structure；The piezo-electric stack structure includes hearth electrode, piezoelectric nano column array, nano-pillar sidewall spacers, the gap filling layer being produced on outside nano-pillar sidewall spacers, top electrode.The orthogonal array nano-pillar FBAR of the present invention can effectively discharge the stress accumulated in piezoelectric growth, reduce material internal defect, effectively suppress other parasitic modes of vibration in addition to extensional vibration, realize lower hybrid wave high q-factor FBAR.
Description
Technical field
The present invention relates to bulk acoustic wave resonator, more particularly to a kind of orthogonal array nano-pillar FBAR and its
Preparation method and wave filter.
Background technology
Many communication system development can all have the trend of miniaturization to a certain degree.On the one hand miniaturization can allow system more
Plus it is light and effective, on the other hand, growing IC manufacturing technologies can be produced large batch of small-sized with lower cost
Product.Based on FBAR（film bulk acoustic resonator,FBAR）The wave filter of technology is compared
In traditional dielectric ceramic filter, SAW filter, with working frequency is high, power capacity is big, low, small volume, temperature is lost
Stability is good and can be with RF IC (radio frequency integrated circuit, RFIC) or microwave list
The integrated advantage of piece circuit (microwave monolithic integrated circuit, MMIC).Therefore, FBAR is modern
Afterwards in a very long time wireless terminal radio-frequency front-end ideal solution.
FBAR uses the sandwich structure of metal electrode-piezoelectric membrane-metal electrode, its operation principle
As shown in figure 1, can sketch and be：When applying an alternating voltage on two electrodes, alternating electric field can be formed in piezoelectric membrane, is pressed
Conductive film deformation due to piezo-electric effect, so as to inspire bulk acoustic wave.At this moment the bulk acoustic wave in film is along film thickness side
To propagation, and roundtrip between electrodes, when propagation distance of the bulk acoustic wave in piezoelectric membrane is exactly the strange of half-wavelength
Resonance will be produced during several times.Sound wave loss wherein at resonant frequency is minimum so that the acoustical signal of the frequency can pass through piezoelectricity
Film layer, and other acoustical signals for being unsatisfactory for condition of resonance will decay, the acoustical signal for differing more remote with resonant frequency decays
It is faster.Single FBAR simply produces resonance in some frequency, it is impossible to be referred to as wave filter.By multiple thin-film bodies
Acoustic resonator, which is cascaded, bridges or is coupled by certain mode, can be formed by meeting the bandpass filtering of certain demand
Device, its cascade mode is the most commonly used.
The prevailing technology for preparing FBAR piezoelectric layers at present is the magnetron sputtering AlN piezoelectric membranes on electrode film, and due to
There is larger lattice mismatch and thermal mismatching between AlN films and electrode, cause in growing film stress excessive and produce and lack
Fall into, and cause wafer warpage or crack.Device fabrication difficulty is not only increased, reduces yield of devices, while also weakening
Device performance.
The content of the invention
In order to overcome the disadvantages mentioned above and deficiency of prior art, an object of the present invention is to provide a kind of orthogonal array
Nano-pillar FBAR, and bandpass filter can be designed by modes such as cascade, bridge joints.
The second object of the present invention is the preparation method for providing above-mentioned orthogonal array nano-pillar FBAR.
The third object of the present invention is to provide a kind of wave filter.
The purpose of the present invention is achieved through the following technical solutions：
Orthogonal array nano-pillar FBAR, successively including silicon substrate, cavity and piezo-electric stack structure, the cavity
It is formed between silicon substrate and piezo-electric stack structure；The piezo-electric stack structure include hearth electrode, piezoelectric nano column array,
Nano-pillar sidewall spacers, the gap filling layer being produced on outside nano-pillar sidewall spacers, top electrode.
The cavity is convex or recessed cavity.
When the cavity is convex cavity, the piezo-electric stack structure also includes being located at the support under hearth electrode
Layer, the resonator of the cavity formation FBAR between the supporting layer and silicon substrate.
The preparation method of the orthogonal array nano-pillar FBAR, comprises the following steps：
（1）Top surface using lithographic technique in silicon substrate prepares a groove；
（2）Sacrificial layer material is filled up in a groove；
（3）Layer of metal hearth electrode is deposited on sacrificial layer material, and is patterned；
（4）Piezoelectric nano column array is prepared on hearth electrode；
（5）In one layer of nano-pillar sidewall spacers of piezoelectric nano column array surrounding growth；
（6）One layer of dielectric of spin coating, makes it that nano column array top is completely covered, is filled as gap in nano-pillar gap
Layer；
（7）Using dry etching or the anti-etching dielectric layer of chemical polishing, until being completely exposed the top of nano column array, formed
Substrate；
（8）The etching through hole on substrate, exposes hearth electrode, and deposits layer of metal top electrode, and carries out image conversion；The bottom
Electrode, substrate, top electrode formation piezo-electric stack structure；
（9）Sacrifice layer release through hole is etched in piezo-electric stack structure, through hole releasing sacrificial layer is discharged by sacrifice layer, obtained
Vertical stratification nano-pillar FBAR.
The preparation method of the orthogonal array nano-pillar FBAR, comprises the following steps：
（1）One layer of sacrifice layer is deposited in silicon substrate, and etching forms sacrifice layer projection；
（2）One layer of supporting layer is prepared on sacrifice layer；
（3）Layer of metal hearth electrode is deposited on supporting layer, and is patterned；
（4）Piezoelectric nano column array is prepared on hearth electrode；
（5）In one layer of nano-pillar sidewall spacers of piezoelectric nano column array surrounding growth；
（6）One layer of dielectric of spin coating, makes it that nano column array top is completely covered, is filled as gap in nano-pillar gap
Layer；
（7）Using dry etching or the anti-etching dielectric layer of chemical polishing, until being completely exposed the top of nano column array, formed
Substrate；
（8）The etching through hole on substrate, exposes hearth electrode, and deposits layer of metal top electrode, and carries out image conversion；The branch
Support layer, hearth electrode, substrate, top electrode formation piezo-electric stack structure；
（9）Sacrifice layer release through hole is etched in piezo-electric stack structure, through hole releasing sacrificial layer is discharged by sacrifice layer, obtained
The FBAR of multi-resonant pattern.
Wave filter, includes described orthogonal array nano-pillar FBAR.
Compared with prior art, the present invention has advantages below and beneficial effect：
The FBAR of the present invention substitutes traditional piezoelectric membrane, nano-pillar battle array using piezoelectric nano column array
Array structure can effectively releasable material growth accumulated in stress, reduce material internal defect, so as to improve device performance；
Further, since nano column array gap is filled using the dielectric of specific extremely low acoustic impedance, effectively suppress to remove extensional vibration
Other outer parasitic modes of vibration, realize lower hybrid wave high q-factor FBAR.
Brief description of the drawings
Fig. 1 is the sectional view of the orthogonal array nano-pillar FBAR of embodiments of the invention 1.
Fig. 2 is the photoetching of the orthogonal array nano-pillar FBAR of embodiments of the invention 2, etching sacrificial layer
Sectional view afterwards.
Fig. 3 is the sectional view of the orthogonal array nano-pillar FBAR of embodiments of the invention 2.
Embodiment
With reference to embodiment, the present invention is described in further detail, but the implementation of the present invention is not limited to this.
Embodiment 1.
The orthogonal array nano-pillar FBAR of the present embodiment, is prepared by following preparation method：
1st, in silicon substrate 1 surface etch, one groove, 30 μm of groove depth, then PECVD deposit Si3N4Substrate protective layer 2, thickness is
200nm, to protect silicon substrate.
2nd, in Si3N4On PECVD deposit one layer of PSG（Phosphorus quartz glass）It is used as sacrifice layer.
3rd, surface polishing is carried out to sacrifice layer by CMP.
4th, surface after a polish is by one layer of Mo hearth electrode 4 of Deposited By Dc Magnetron Sputtering, and thickness is 200nm, and is passed through
Lift-off technologies are patterned.
5th, using selective area growth technology, high V-III than growing technology from bottom to top, or using nano-form from upper
Lower lithographic technique prepares AlN nano column array 5, a diameter of 30nm-900nm of the nano-pillar, is highly 0.5 μm -5 μm.5th, it is sharp
With LPCVD or PECVD in one layer of nano-pillar sidewall spacers 6 of nano-pillar surrounding growth of AlN nano column arrays 5, the nanometer
The material of post sidewall spacers 6 is SiNx、SiO2Or Al2O3, thickness is 10nm-50nm.
6th, one layer of dielectric layer 7 of spin coating in the gap of AlN nano column arrays 5, makes it that AlN nano column arrays are completely covered
5 top, and with smooth upper surface, the dielectric layer 7 is that spin-on dielectric siloxanes, silsesquioxane or polyamides are sub-
Amine.
7th, using dry etching or the anti-etching dielectric layer 7 of chemical polishing, pushed up until being completely exposed AlN nano column arrays 5
End, forms substrate, and the dry etching is F bases or Cl base reactive ion etchings（RIE）, inductively coupled plasma reactive ion
Etching（ICP-RIE）Or electron cyclotron resonace reactive ion etching（ECR-RIE）System.
8th, through hole is gone out by dry etching on substrate, exposes Mo hearth electrodes 4, pass through the thickness of electron-beam evaporation one
Spend for Mo top electrodes 8 thick 100nm, and be patterned by lift-off technologies.The hearth electrode 4, substrate, top electrode 8
Form piezo-electric stack structure.
9th, sacrifice layer release through hole is etched, XeF is used2（Xenon fluoride）Gas discharges through hole by sacrifice layer, obtains cavity
3.Orthogonal array nano-pillar FBAR is finally given, as shown in Figure 1.
The wave filter of the present embodiment, includes the orthogonal array nano-pillar FBAR of the present embodiment.By two
Tandem thin-film bulk acoustic wave resonator and a parallel thin film bulk acoustic wave resonator are cascaded into ladder type topology.Wherein, it is in parallel thin
The top electrode thickness ratio tandem thin-film bulk acoustic wave resonator thickness 10nm of film body acoustic resonator.So as to constitute a bandpass filtering
Device.
Embodiment 2.
1st, one layer of PSG is deposited in the surface PECVD of silicon substrate 1（Phosphorus quartz glass）As sacrifice layer 9, and make sacrifice layer by lithography
Figure.As shown in Figure 2.
2nd, one layer of Si is deposited with PECVD3N4 Supporting layer 10, thickness is 300nm.
3rd, it is the thick Mo hearth electrodes 4 of 150nm by magnetically controlled DC sputtering a layer thickness.
4th, using selective area growth technology, high V-III than growing technology from bottom to top, or using nano-form from upper
Lower lithographic technique prepares AlN nano column array 5, a diameter of 30nm-900nm of the nano-pillar, is highly 0.5 μm -5 μm.5th, it is sharp
With LPCVD or PECVD in one layer of nano-pillar sidewall spacers 6 of nano-pillar surrounding growth of AlN nano column arrays 5, the nanometer
The material of post sidewall spacers 6 is SiNx、SiO2Or Al2O3, thickness is 10nm-50nm.
6th, one layer of dielectric layer 7 of spin coating in the gap of AlN nano column arrays 5, makes it that AlN nano column arrays are completely covered
5 top, and with smooth upper surface, the dielectric layer 7 is that spin-on dielectric siloxanes, silsesquioxane or polyamides are sub-
Amine.
7th, using dry etching or the anti-etching dielectric layer 7 of chemical polishing, pushed up until being completely exposed AlN nano column arrays 5
End, forms substrate, and the dry etching is F bases or Cl base reactive ion etchings（RIE）, inductively coupled plasma reactive ion
Etching（ICP-RIE）Or electron cyclotron resonace reactive ion etching（ECR-RIE）System.
8th, through hole is gone out by dry etching on substrate, exposes Mo hearth electrodes 4, pass through the thickness of electron-beam evaporation one
Spend for Mo top electrodes 8 thick 150nm, and be patterned by lift-off technologies.The supporting layer 10, hearth electrode 4, base
Piece, the formation piezo-electric stack structure of top electrode 8.
9th, sacrifice layer release through hole is etched, XeF is used2（Xenon fluoride）Gas discharges through hole by sacrifice layer, obtains cavity
3.Orthogonal array nano-pillar FBAR is finally given, as shown in Figure 3.
Above-described embodiment is preferably embodiment, but embodiments of the present invention are not by the embodiment of the invention
Limitation, other any Spirit Essences without departing from the present invention and the change made under principle, modification, replacement, combine, simplification,
Equivalent substitute mode is should be, is included within protection scope of the present invention.
Claims (9)
1. a kind of orthogonal array nano-pillar FBAR, it is characterised in that it includes silicon substrate, cavity and pressure successively
Pile stack structure, the cavity is formed between silicon substrate and piezo-electric stack structure；The piezo-electric stack structure include hearth electrode,
Piezoelectric nano column array, nano-pillar sidewall spacers, the gap filling layer being produced on outside nano-pillar sidewall spacers, top electricity
Pole.
2. orthogonal array nano-pillar FBAR according to claim 1, it is characterised in that the cavity is
Convex or recessed cavity.
3. orthogonal array nano-pillar FBAR according to claim 1, it is characterised in that when the cavity
During for convex cavity, the piezo-electric stack structure also includes being located at the supporting layer under hearth electrode, and the supporting layer is served as a contrast with silicon
Convex cavity is formed between bottom.
4. orthogonal array nano-pillar FBAR according to claim 1, it is characterised in that the piezoresistive material
Expect the AlN nano column arrays that nano column array is C axle preferrel orientations；Wherein, a diameter of 30nm- of piezoelectric nano-pillar
900nm, is highly 0.5 μm -5 μm.
5. orthogonal array nano-pillar FBAR according to claim 1, it is characterised in that the nano-pillar
The material of sidewall spacers is SiNx、SiO2Or Al2O3, thickness is 10nm-50nm.
6. orthogonal array nano-pillar FBAR according to claim 1, it is characterised in that the gap is filled out
Fill dielectric siloxanes, silsesquioxane or polyimides that layer material is spin coating.
7. a kind of preparation method of orthogonal array nano-pillar FBAR, it is characterised in that it comprises the following steps：
（1）Top surface using lithographic technique in silicon substrate prepares a groove；
（2）Sacrificial layer material is filled up in a groove；
（3）Layer of metal hearth electrode is deposited on sacrificial layer material, and is patterned；
（4）Piezoelectric nano column array is prepared on hearth electrode；
（5）In one layer of nano-pillar sidewall spacers of piezoelectric nano column array surrounding growth；
（6）One layer of dielectric of spin coating, makes it that nano column array top is completely covered, is filled as gap in nano-pillar gap
Layer；
（7）Using dry etching or the anti-etching dielectric layer of chemical polishing, until being completely exposed the top of nano column array, formed
Substrate；
（8）The etching through hole on substrate, exposes hearth electrode, and deposits layer of metal top electrode, and carries out image conversion；The bottom
Electrode, substrate, top electrode formation piezo-electric stack structure；
（9）Sacrifice layer release through hole is etched in piezo-electric stack structure, through hole releasing sacrificial layer is discharged by sacrifice layer, obtained
Vertical stratification nano-pillar FBAR.
8. a kind of preparation method of orthogonal array nano-pillar FBAR, it is characterised in that it comprises the following steps：
（1）One layer of sacrifice layer is deposited in silicon substrate, and etching forms sacrifice layer projection；
（2）One layer of supporting layer is prepared on sacrifice layer；
（3）Layer of metal hearth electrode is deposited on supporting layer, and is patterned；
（4）Piezoelectric nano column array is prepared on hearth electrode；
（5）In one layer of nano-pillar sidewall spacers of piezoelectric nano column array surrounding growth；
（6）One layer of dielectric of spin coating, makes it that nano column array top is completely covered, is filled as gap in nano-pillar gap
Layer；
（7）Using dry etching or the anti-etching dielectric layer of chemical polishing, until being completely exposed the top of nano column array, formed
Substrate；
（8）The etching through hole on substrate, exposes hearth electrode, and deposits layer of metal top electrode, and carries out image conversion；The branch
Support layer, hearth electrode, substrate, top electrode formation piezo-electric stack structure；
（9）Sacrifice layer release through hole is etched in piezo-electric stack structure, through hole releasing sacrificial layer is discharged by sacrifice layer, obtained
The FBAR of multi-resonant pattern.
9. wave filter, it is characterised in that it includes the orthogonal array film bulk acoustic resonator described in any one of claim 1 ~ 6
Device.
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108092639A (en) * | 2017-12-21 | 2018-05-29 | 华南理工大学 | A kind of micro-nano column flexible array film bulk acoustic resonator subfilter and its preparation |
| CN108900173A (en) * | 2018-07-04 | 2018-11-27 | 杭州左蓝微电子技术有限公司 | It is a kind of using silicon as the thin film bulk acoustic wave resonator preparation method of sacrificial layer |
| CN111049490A (en) * | 2019-12-31 | 2020-04-21 | 诺思(天津)微系统有限责任公司 | Bulk acoustic wave resonator with electrical isolation layer, method of manufacturing the same, filter, and electronic apparatus |
| CN112448686A (en) * | 2019-09-05 | 2021-03-05 | 芯恩（青岛）集成电路有限公司 | Nano material bulk acoustic wave resonator and preparation method thereof |
| CN112565949A (en) * | 2020-11-18 | 2021-03-26 | 杭州士兰集昕微电子有限公司 | Piezoelectric micro-electromechanical system microphone and manufacturing method thereof |
| CN114094970A (en) * | 2022-01-20 | 2022-02-25 | 深圳新声半导体有限公司 | Method for manufacturing film bulk acoustic wave resonator and resonator |
| WO2022267295A1 (en) * | 2021-06-21 | 2022-12-29 | 苏州晶方半导体科技股份有限公司 | Piezoelectric micromachined ultrasonic transducer and manufacturing method therefor |
| CN116633309A (en) * | 2023-05-25 | 2023-08-22 | 武汉敏声新技术有限公司 | Bulk acoustic wave resonator and preparation method thereof |
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