CN106951193B - Improve the method and its system of Nand Flash storage performance - Google Patents
Improve the method and its system of Nand Flash storage performance Download PDFInfo
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- CN106951193B CN106951193B CN201710186377.4A CN201710186377A CN106951193B CN 106951193 B CN106951193 B CN 106951193B CN 201710186377 A CN201710186377 A CN 201710186377A CN 106951193 B CN106951193 B CN 106951193B
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
- G06F3/0601—Interfaces specially adapted for storage systems
- G06F3/0602—Interfaces specially adapted for storage systems specifically adapted to achieve a particular effect
- G06F3/0614—Improving the reliability of storage systems
- G06F3/0616—Improving the reliability of storage systems in relation to life time, e.g. increasing Mean Time Between Failures [MTBF]
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
- G06F3/0601—Interfaces specially adapted for storage systems
- G06F3/0628—Interfaces specially adapted for storage systems making use of a particular technique
- G06F3/0629—Configuration or reconfiguration of storage systems
- G06F3/0631—Configuration or reconfiguration of storage systems by allocating resources to storage systems
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
- G06F3/0601—Interfaces specially adapted for storage systems
- G06F3/0628—Interfaces specially adapted for storage systems making use of a particular technique
- G06F3/0638—Organizing or formatting or addressing of data
- G06F3/064—Management of blocks
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
- G06F3/0601—Interfaces specially adapted for storage systems
- G06F3/0668—Interfaces specially adapted for storage systems adopting a particular infrastructure
- G06F3/0671—In-line storage system
- G06F3/0673—Single storage device
- G06F3/0679—Non-volatile semiconductor memory device, e.g. flash memory, one time programmable memory [OTP]
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- General Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Techniques For Improving Reliability Of Storages (AREA)
- Read Only Memory (AREA)
Abstract
The invention discloses a kind of method and its system for improving Nand Flash storage performance, method includes: the number of erasing for obtaining each piece in Nand Flash；The average value of described each piece of number of erasing is calculated；The number of erasing of first several block is preset if it exists less than the average value, and is more than default first number with the average value, then the number of erasing of default first several block is updated to the average value.The number of erasing of erase number and the excessive block of average value gap is increased to average value, although sacrificing the number of erasing of these blocks, but it avoids because the number of erasing of these blocks is very few, and system constantly does data-moving and GC operation in order to reach abrasion equilibrium, it is moved by saving system the time of block, lifting system performance.
Description
Technical field
The present invention relates to technical field of data storage more particularly to it is a kind of improve Nand Flash storage performance method and
Its system.
Background technique
Nand Flash memory is one kind of flash memory (flash memory), internal to use non-linear macroelement mode, is solid
The realization of state large capacity memory provides cheap effective solution scheme.Nand flash storage has capacity larger, rewrites
The advantages that speed is fast suitable for the storage of mass data, thus is in the industry cycle more and more widely used, such as embedded production
It include digital camera, MP3 walkman memory card, USB flash disk of compact etc. in product.Digital product can all use storage equipment, that
Just have an opportunity to use Nand Flash, in the case where digital product is more and more extensive, the algorithm for storing equipment be will affect
Nand Flash wear leveling.
One flash memory is usually to be made of several flash blocks (block), and each flash block is divided into several physics again
Page (page).Page is the minimum unit that data are written, and block is the minimum unit for wiping data.Data cannot be write repeatedly in page
Enter, only can just be re-write after the block comprising this page is wiped free of.And the erasing times of each flash block be it is conditional, only
Wherein there are the erasing times of a flash block to reach the upper limit, data storage will become unreliable, influence whether entirely to dodge
The service life deposited.
In the Chinese patent open file of Publication No. CN102880556A, a kind of realization Nand Flash mill is proposed
It damages balanced method: counting the erasing times of each Block in current Nand Flash, and calculate the temperature of each Block；Root
Each Block is distributed into EDOL, HSL or CSL according to data storage information and temperature；The cold block processor of start by set date；When
When Nand Flash has data write-in, the least several Block of erasing times are picked out from free block chained list, are write data into
In these Block.But in the program, once the number for finding that some blocks are used is less, these blocks constantly can be included in sky
White piece, and by the data-moving of other blocks into these blocks, to cause unnecessary GC (Gabage Collection, rubbish
Recycling) phenomenon, cause system performance to decline.
Summary of the invention
The technical problems to be solved by the present invention are: propose it is a kind of improve Nand Flash storage performance method and its be
System, can lifting system performance.
In order to solve the above-mentioned technical problem, a kind of the technical solution adopted by the present invention are as follows: improvement Nand Flash storage
The method of energy, comprising:
Obtain each piece in Nand Flash of number of erasing；
The average value of described each piece of number of erasing is calculated；
The number of erasing of first several block is preset if it exists less than the average value, and is more than with the average value
First number is preset, then the number of erasing of default first several block is updated to the average value.
The invention further relates to a kind of systems for improving Nand Flash storage performance, comprising:
Module is obtained, for obtaining each piece in Nand Flash of number of erasing；
Computing module, the average value of the number of erasing for being calculated described each piece；
First update module, for presetting the number of erasing of first several block if it exists less than the average value, and with
The average value is more than to preset first number, then is updated to the number of erasing of default first several block described flat
Mean value.
The beneficial effects of the present invention are: will erase the number block excessive with the average value gap of all pieces of number of erasing
Number of erasing be increased to average value, although sacrificing the number of erasing of these blocks, avoid because these blocks number of erasing
It is very few, and system constantly done to reach abrasion equilibrium data-moving and GC operation, by saving system move block when
Between, lifting system performance.
Detailed description of the invention
Fig. 1 is a kind of flow chart for the method for improving Nand Flash storage performance of the present invention；
Fig. 2 is the method flow diagram of the embodiment of the present invention one；
Fig. 3 is a kind of structural schematic diagram for the system for improving Nand Flash storage performance of the present invention；
Fig. 4 is the system structure diagram of the embodiment of the present invention two.
Label declaration:
1, module is obtained；2, computing module；3, the first update module；4, module is established；5, the second update module；6, it moves
Module；7, setup module.
Specific embodiment
To explain the technical content, the achieved purpose and the effect of the present invention in detail, below in conjunction with embodiment and cooperate attached
Figure is explained in detail.
The most critical design of the present invention is: erase number of the number with biggish piece of mean difference that will erase is promoted to
Average value.
Referring to Fig. 1, a kind of method for improving Nand Flash storage performance, comprising:
Obtain each piece in Nand Flash of number of erasing；
The average value of described each piece of number of erasing is calculated；
The number of erasing of first several block is preset if it exists less than the average value, and is more than with the average value
First number is preset, then the number of erasing of default first several block is updated to the average value.
As can be seen from the above description, the beneficial effects of the present invention are: it avoids the number because some block is erased very little, and is
System constantly does the decline of system effectiveness caused by GC for this block.
Further, before described " number of erasing for obtaining each piece in Nand Flash ", further comprise:
It establishes block to erase record sheet, each piece of number of erasing in the described piece of record sheet record Nand Flash that erases；
When erasing of block of generation, the number of erasing for the block that more kainogenesis is erased.
Seen from the above description, each piece of number of erasing effectively is recorded.
Further, after described " number of erasing of default first several block is updated to the average value ",
Further comprise:
When the data in the maximum default second several block of number of erasing need to be updated, then the data are removed
It moves in other blocks.
Further, after described " number of erasing of default first several block is updated to the average value ",
Further comprise:
Minimum grade is set by the selection priority of the maximum default second several block of number of erasing, until each
The number difference of erasing of block, which is less than or equal to, presets second number.
It seen from the above description, will not when the number of erasing between block differs greatly then when selecting blank block
Selection is erased, and number is maximum to preset second several block, but other blocks is selected to carry out data storages, realize each piece it
Between loss equalization.
Further, first several value range is 3-5；Second several value range is 3-5；It is described
First time number is greater than or equal to 60；Second several value range is 10-20.
Seen from the above description, first number cannot be set too many, avoid the number of erasing because sacrificing muti-piece anti-
And substantially reduce the life cycle of Nand Flash.
Referring to figure 3., the present invention also proposes a kind of system for improving Nand Flash storage performance, comprising:
Module is obtained, for obtaining each piece in Nand Flash of number of erasing；
Computing module, the average value of the number of erasing for being calculated described each piece；
First update module, for presetting the number of erasing of first several block if it exists less than the average value, and with
The average value is more than to preset first number, then is updated to the number of erasing of default first several block described flat
Mean value.
Further, further includes:
Module is established, is erased record sheet for establishing block, each piece in the described piece of record sheet record Nand Flash that erases
Number of erasing；
Second update module, for when erasing of block of generation, the number of erasing for the block that more kainogenesis is erased.
Further, further includes:
Moving module, for when the data in the maximum default second several block of number of erasing need to be updated,
Then by the data-moving into other blocks.
Further, further includes:
Setup module, for setting minimum for the selection priority of the maximum default second several block of number of erasing
Grade, until each piece of number difference of erasing, which is less than or equal to, presets second number.
Further, first several value range is 3-5；Second several value range is 3-5；It is described
First time number is greater than or equal to 60；Second several value range is 10-20.
Embodiment one
Referring to figure 2., the embodiment of the present invention one are as follows: a method of improve Nand Flash storage performance, including such as
Lower step:
S1: establishing block and erase record sheet, each piece of number of erasing in the described piece of record sheet record Nand Flash that erases.
S2: when erasing of block of generation, the number of erasing for the block that more kainogenesis is erased.The calculation of Nand Flash control chip
In method, because of the physical characteristic of Nand Flash, 0 can only be become by 1, and 1 cannot be become by 0, therefore, the number in a block
According to it is to be updated when, it is necessary to data-moving is stored to another block, specifically, will not have the data changed in legacy data
It directly moves in another block, then stores the data for having change in updated legacy data to another described block
In, the block where legacy data of then erasing is original, the block after being erased reforms into blank block (free block), can be for next
The selection of secondary data write-in.For example, it is assumed that there is 10 page datas in first block, second block is blank block, now to update first
Data in block in page 10, then directly move the 1-9 pages of data into second block, then by updated page 10
Data store into second block, at this point, storing new data in second block, the data in first piece have become dirty number
According to then needing to erase the data in first block, the number of erasing of first block adds one, and after erasing, first block is
Blank block is become.
S3: each piece in Nand Flash of number of erasing is obtained.
S4: the average value of described each piece of number of erasing is calculated.
S5: judging whether there is the number of erasing of default first several block less than the average value, and with it is described average
Value differs by more than default first number, if so, S6 is thened follow the steps, if it is not, then returning to step S2.
S6: the number of erasing of default first several block is updated to the average value.
S7: judge whether each piece of number of erasing differs to be less than or equal to and preset second number, if it is not, executing step
S8 executes step S2 if so, choosing the read-write that any blank block carries out Nand Flash.
S8: when the data in the maximum default second several block of number of erasing need to be updated, then by the number
It is set as minimum according to moving into other blocks, also, by the selection priority of the maximum default second several block of number of erasing
Grade.Return to step S2.
That is, then will not select and smear when selecting blank block when the number of erasing between block differs greatly
Second several block is preset except number is maximum, but other blocks is selected to carry out data storage；Only when erasing between block
When number difference is smaller, maximum piece of these numbers of erasing can just be continued using at this point, each of Nand Flash pieces
It can be selected.
Preferably, first several value range is 3-5；Second several value range is 3-5；Described
One time number is greater than or equal to 60；Second several value range is 10-20.
The present embodiment mentions the number of erasing for the number block excessive with the average value gap of all pieces of number of erasing of erasing
Height arrives average value, although sacrificing the number of erasing of these blocks, avoids because the number of erasing of these blocks is very few, and system is
Reach abrasion equilibrium and constantly do data-moving and GC operation, the time of block is moved by saving system, lifting system
Energy.
By taking Toshiba 6TGL flash as an example, it is assumed that it is that (spec defines Min 1369 to 1400blocks that block, which can be used,
1428 blocks of blocks Max), it is assumed that the time that GC can once be used up is 5s (the previous page program time of mesh
About 5ms, 1024page are about 5s), if there is the number of erasing of a block is 20 times, average wear leveling
(loss equalization) number is 100 times, in order to reach this block with the number of erasing other blocks, it is possible to
When searching new block every time, this block is done into GC, is at most likely to be breached 80 times, consumes system resource more.If disposably will
The number of erasing of this block is labeled as 100 times, although sacrificing a block, can the system of saving move time of block,
Lifting system performance.
Embodiment two
Referring to figure 4., the present embodiment is a kind of system of improvement Nand Flash storage performance of corresponding above-described embodiment,
Include:
Module 1 is obtained, for obtaining each piece in Nand Flash of number of erasing；
Computing module 2, the average value of the number of erasing for being calculated described each piece；
First update module 3, for presetting the number of erasing of first several block if it exists less than the average value, and with
The average value is more than to preset first number, then is updated to the number of erasing of default first several block described flat
Mean value.
Further, further includes:
Module 4 is established, is erased record sheet for establishing block, each piece in the described piece of record sheet record Nand Flash that erases
Number of erasing；
Second update module 5, for when erasing of block of generation, the number of erasing for the block that more kainogenesis is erased.
Further, further includes:
Moving module 6, for when the data in the maximum default second several block of number of erasing need to be updated,
Then by the data-moving into other blocks.
Further, further includes:
Setup module 7, for setting minimum for the selection priority of the maximum default second several block of number of erasing
Grade, until each piece erase number difference be less than or equal to preset second number.
Further, first several value range is 3-5；Second several value range is 3-5；It is described
First time number is greater than or equal to 60；Second several value range is 10-20.
In conclusion a kind of method and its system for improving Nand Flash storage performance provided by the invention, will erase
The number of erasing of the number block excessive with the average value gap of all pieces of number of erasing is increased to average value, although sacrificing this
The number of erasing of a little blocks, but avoid because the number of erasing of these blocks is very few, and system in order to reach abrasion equilibrium and constantly
Data-moving and GC operation are done, is moved by saving system the time of block, lifting system performance.
The above description is only an embodiment of the present invention, is not intended to limit the scope of the invention, all to utilize this hair
Equivalents made by bright specification and accompanying drawing content are applied directly or indirectly in relevant technical field, similarly include
In scope of patent protection of the invention.
Claims (6)
1. a kind of method for improving Nand Flash storage performance characterized by comprising
Obtain each piece in Nand Flash of number of erasing；
The average value of described each piece of number of erasing is calculated；
It is more than default that the number of erasing of first several block is preset if it exists less than the average value, and with the average value
The number of erasing of default first several block is then updated to the average value by first number；
Wherein, it after described " number of erasing of default first several block is updated to the average value ", further wraps
It includes:
When the data in the maximum default second several block of number of erasing need to be updated, then extremely by the data-moving
In other blocks；
Wherein, it after described " number of erasing of default first several block is updated to the average value ", further wraps
It includes:
Minimum grade is set by the selection priority of the maximum default second several block of number of erasing, until each piece
Number of erasing difference, which is less than or equal to, presets second number.
2. the method according to claim 1 for improving Nand Flash storage performance, which is characterized in that described " to obtain
Before each piece of number of erasing in Nand Flash ", further comprise:
It establishes block to erase record sheet, each piece of number of erasing in the described piece of record sheet record Nand Flash that erases；
When erasing of block of generation, the number of erasing for the block that more kainogenesis is erased.
3. the method according to claim 1 for improving Nand Flash storage performance, which is characterized in that first number
Value range be 3-5；Second several value range is 3-5；First number is greater than or equal to 60；Described second
The value range of number is 10-20.
4. a kind of system for improving Nand Flash storage performance characterized by comprising
Module is obtained, for obtaining each piece in Nand Flash of number of erasing；
Computing module, the average value of the number of erasing for being calculated described each piece；
First update module, for presetting the number of erasing of first several block if it exists less than the average value, and with it is described
Average value is more than to preset first number, then is updated to the number of erasing of default first several block described average
Value；
Wherein, further includes:
Moving module, for when the data in the maximum default second several block of number of erasing need to be updated, then will
The data-moving is into other blocks；
Wherein, further includes:
Setup module, for setting minimum etc. for the selection priority of the maximum default second several block of number of erasing
Grade, until each piece of number difference of erasing, which is less than or equal to, presets second number.
5. the system according to claim 4 for improving Nand Flash storage performance, which is characterized in that further include:
Module is established, is erased record sheet for establishing block, is smeared for each piece in the described piece of record sheet record Nand Flash that erases
Except number；
Second update module, for when erasing of block of generation, the number of erasing for the block that more kainogenesis is erased.
6. the system according to claim 4 for improving Nand Flash storage performance, which is characterized in that first number
Value range be 3-5；Second several value range is 3-5；First number is greater than or equal to 60；Described second
The value range of number is 10-20.
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| CN108681435B (en) * | 2018-05-25 | 2021-06-29 | 郑州云海信息技术有限公司 | Wear leveling method, device, equipment and storage medium for solid state disk |
| CN111435403B (en) * | 2018-12-26 | 2024-05-07 | 深圳市中兴微电子技术有限公司 | Wear balancing method and device for flash memory system |
| CN117632037B (en) * | 2024-01-25 | 2024-05-03 | 合肥兆芯电子有限公司 | Data storage method, memory storage device and memory controller |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101645309A (en) * | 2008-08-05 | 2010-02-10 | 威刚科技（苏州）有限公司 | Non-volatile memory device and control method thereof |
| CN102103542A (en) * | 2009-12-18 | 2011-06-22 | 智微科技股份有限公司 | Wear leveling method and device |
| CN102193869A (en) * | 2010-03-01 | 2011-09-21 | 群联电子股份有限公司 | Memory management and write-in method, memory controller and storage system |
| CN104298610A (en) * | 2009-09-03 | 2015-01-21 | 晶先锋科技有限公司 | Data storage system and managing method thereof |
| CN204332379U (en) * | 2014-07-17 | 2015-05-13 | 威盛电子股份有限公司 | The Memory Controller of nonvolatile memory and solid-state drive |
| CN105354152A (en) * | 2014-08-19 | 2016-02-24 | 华为技术有限公司 | Nonvolatile memory and wear leveling method |
-
2017
- 2017-03-27 CN CN201710186377.4A patent/CN106951193B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101645309A (en) * | 2008-08-05 | 2010-02-10 | 威刚科技（苏州）有限公司 | Non-volatile memory device and control method thereof |
| CN104298610A (en) * | 2009-09-03 | 2015-01-21 | 晶先锋科技有限公司 | Data storage system and managing method thereof |
| CN102103542A (en) * | 2009-12-18 | 2011-06-22 | 智微科技股份有限公司 | Wear leveling method and device |
| CN102193869A (en) * | 2010-03-01 | 2011-09-21 | 群联电子股份有限公司 | Memory management and write-in method, memory controller and storage system |
| CN204332379U (en) * | 2014-07-17 | 2015-05-13 | 威盛电子股份有限公司 | The Memory Controller of nonvolatile memory and solid-state drive |
| CN105354152A (en) * | 2014-08-19 | 2016-02-24 | 华为技术有限公司 | Nonvolatile memory and wear leveling method |
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Address after: 518000 floors 1-3 and 4 of buildings 4 and 8, zone 2, Zhongguan honghualing Industrial South Zone, No. 1213 Liuxian Avenue, Pingshan community, Taoyuan Street, Nanshan District, Shenzhen, Guangdong Patentee after: BIWIN STORAGE TECHNOLOGY Co.,Ltd. Address before: 518000 1st, 2nd, 4th and 5th floors of No.4 factory building, tongfuyu industrial town, Taoyuan Street, Nanshan District, Shenzhen City, Guangdong Province Patentee before: BIWIN STORAGE TECHNOLOGY Co.,Ltd. |