CN106910672A - A kind of semiconductor growing process - Google Patents
A kind of semiconductor growing process Download PDFInfo
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- CN106910672A CN106910672A CN201710073037.0A CN201710073037A CN106910672A CN 106910672 A CN106910672 A CN 106910672A CN 201710073037 A CN201710073037 A CN 201710073037A CN 106910672 A CN106910672 A CN 106910672A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
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- Condensed Matter Physics & Semiconductors (AREA)
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- Manufacturing & Machinery (AREA)
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- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Recrystallisation Techniques (AREA)
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Abstract
The present invention relates to a kind of semiconductor growing process, including nitration case is grown on a silicon substrate, selection carries out the growth of nitration case more than the silicon substrate of standard thickness, the silicon substrate to having grown nitration case is thinned to standard thickness.The present invention is used for the growth of gallium nitride material using the silicon chip more than standard thickness, and less warpage can be formed in growth course（<200 km‑1）, so as to reduce the generation of skid wire, substantially increase the quality of product.
Description
Technical field
The present invention relates to semiconductor applications, more particularly to a kind of semiconductor growing process.
Background technology
Gallium nitride（GaN）Material possesses saturated electrons speed higher, breakdown voltage high and the characteristic of high-temperature resistant,
Power is changed has great application value with radio frequency electronics.Growing gallium nitride material is because of low cost, chi on a silicon substrate
It is very little big, for the industrialization of this material provides solution the features such as radiate relatively preferable.
Because silicon has bigger thermal coefficient of expansion relative to gallium nitride, the process of room temperature is down to from growth temperature higher
In frequently result in the generation of crackle.The solution of use is at present：The film for passing through high aluminium component in growth course is nitrogen
Change gallium and compression is provided（Compressive Strain）, for balancing the thermal stress in temperature-fall period（Tensile
Thermal Strain）.But the problem that this scheme is brought is：Silicon chip can produce larger warpage in growth course
（Convex Curvature）（>300 km-1）, this warpage easily causes skid wire（Slip line）Generation, especially exist
Using standard thickness silicon chip when, bigger warpage and more skid wires is easily produced because of thinner thickness, as shown in Figure 1.
The content of the invention
It is an object of the invention to provide a kind of semiconductor growing process.
To reach above-mentioned purpose, the technical solution adopted by the present invention is：
A kind of semiconductor growing process, including nitration case is grown on a silicon substrate, selection is carried out more than the silicon substrate of standard thickness
The growth of nitration case, the silicon substrate to having grown nitration case is thinned to standard thickness.
Preferably, the standard thickness of described silicon substrate is 650-725 μm.
It is further preferred that the thickness of the silicon substrate of growth selection nitration case is 725-1500 μm.
It is further preferred that the thickness of the silicon substrate of growth selection nitration case is 800-1200 μm.
Preferably, mechanical system is carried out to the silicon substrate for having grown nitration case and is polished to standard thickness.
It is further preferred that being polished to silicon substrate using polishing machine thinning.
Preferably, described nitration case include the silicon substrate upper surface for being formed in described cushion, be formed in it is described
The channel layer of cushion upper surface and it is formed in the grid layer of described channel layer upper surface.
It is further preferred that described cushion is（Al, Ga）The compound layer of N.
It is further preferred that described channel layer is GaN layer.
It is further preferred that described grid layer is AlxGa(1-x)N layers, wherein x=0.15-0.35.
Because above-mentioned technical proposal is used, the present invention has following advantages and effect compared with prior art：
The present invention is used for the growth of gallium nitride material using the silicon chip more than standard thickness, and less sticking up can be formed in growth course
It is bent（<200 km-1）, so that the generation of skid wire is easier to be controlled effectively, substantially increase the quality of product.
Brief description of the drawings
Accompanying drawing 1 is the surface of silicon figure that standard thickness grows after nitration case in the prior art；
Accompanying drawing 2 is to be thinned to the surface of silicon figure of standard thickness in the present embodiment.
Specific embodiment
With reference to case study on implementation, the invention will be further described：
Embodiment one：
A kind of semiconductor growing process, including：Selection thickness is 725 μm of silicon substrate, is formed in the upper surface of silicon substrate 1 and buffered
Layer, surface forms channel layer and forms grid layer in the upper surface of channel layer 3 on the buffer layer, in the present embodiment：Cushion
For（Al, Ga）The compound layer of N；Channel layer is GaN layer；Grid layer is AlxGa(1-x)N layers, wherein x=0.2-0.3；To having grown
The silicon substrate of nitration case is polished by polishing machine and is thinned to 675 μm.
Embodiment two：
A kind of semiconductor growing process, including：Selection thickness is 1000 μm of silicon substrate, is formed in the upper surface of silicon substrate 1 and buffered
Layer, surface forms channel layer and forms grid layer in the upper surface of channel layer 3 on the buffer layer, in the present embodiment：Cushion
For（Al, Ga）The compound layer of N；Channel layer is GaN layer；Grid layer is AlxGa(1-x)N layers, wherein x=0.2-0.3；To having grown
The silicon substrate of nitration case is polished by polishing machine and is thinned to 675 μm, as shown in Figure 2.
Embodiment three：
A kind of semiconductor growing process, including：Selection thickness is 1200 μm of silicon substrate, is formed in the upper surface of silicon substrate 1 and buffered
Layer, surface forms channel layer and forms grid layer in the upper surface of channel layer 3 on the buffer layer, in the present embodiment：Cushion
For（Al, Ga）The compound layer of N；Channel layer is GaN layer；Grid layer is AlxGa(1-x)N layers, wherein x=0.2-0.3；To having grown
The silicon substrate of nitration case is polished by polishing machine and is thinned to 675 μm.
Example IV：
A kind of semiconductor growing process, including：Selection thickness is 1500 μm of silicon substrate, is formed in the upper surface of silicon substrate 1 and buffered
Layer, surface forms channel layer and forms grid layer in the upper surface of channel layer 3 on the buffer layer, in the present embodiment：Cushion
For（Al, Ga）The compound layer of N；Channel layer is GaN layer；Grid layer is AlxGa(1-x)N layers, wherein x=0.2-0.3；To having grown
The silicon substrate of nitration case is polished by polishing machine and is thinned to 675 μm.
It is used for the growth of gallium nitride material using the silicon chip that thickness is 725-1500 μm, because of its thickness higher, grew
Cheng Zhonghui forms less warpage（<200 km-1）, so that the generation of skid wire is easier to be controlled effectively.
It is now that 650,675,700,725,1000,1200,1500 μm of each 10 of silicon substrate carries out gallium nitride life to thickness
It is long, and result to warpage and skid wire records.
Table one is the comparison using standard thickness silicon substrate and the present embodiment thickness silicon substrate：
| Si-Substrate Thickness/μm | 650 | 675 | 700 | 725 | 1000 | 1200 | 1500 |
| 350-450 | 320-380 | 300-360 | 260-320 | 200-250 | 160-200 | 100-150 | |
| Skid wire | It is more | It is more | It is more | It is less | Nothing | Nothing | Nothing |
The above embodiments merely illustrate the technical concept and features of the present invention, its object is to allow person skilled in the art's energy
Solution present disclosure much of that is simultaneously implemented according to this, and it is not intended to limit the scope of the present invention.It is all spiritual according to the present invention
The equivalent change or modification that essence is made, should all be included within the scope of the present invention.
Claims (10)
1. a kind of semiconductor growing process, including nitration case is grown on a silicon substrate, it is characterised in that：Selection is more than standard thickness
Silicon substrate carry out the growth of nitration case, the silicon substrate to having grown nitration case is thinned to standard thickness.
2. a kind of semiconductor growing process according to claim 1, it is characterised in that：The standard thickness of described silicon substrate
It is 650-725 μm.
3. a kind of semiconductor growing process according to claim 2, it is characterised in that：The silicon substrate of growth selection nitration case
Thickness be 725-1500 μm.
4. a kind of semiconductor growing process according to claim 3, it is characterised in that：The silicon substrate of growth selection nitration case
Thickness be 800-1200 μm.
5. a kind of semiconductor growing process according to claim 1, it is characterised in that：Silicon substrate to having grown nitration case
Carry out mechanical system and be polished to standard thickness.
6. a kind of semiconductor growing process according to claim 5, it is characterised in that：Silicon substrate is carried out using polishing machine
Polishing is thinning.
7. a kind of semiconductor growing process according to claim 1, it is characterised in that：Described nitration case includes being formed in
The cushion of described silicon substrate upper surface, the channel layer for being formed in described cushion upper surface and it is formed in described ditch
The grid layer of channel layer upper surface.
8. a kind of semiconductor growing process according to claim 7, it is characterised in that：Described cushion is（Al, Ga）
The compound layer of N.
9. a kind of semiconductor growing process according to claim 7, it is characterised in that：Described channel layer is GaN layer.
10. a kind of semiconductor growing process according to claim 7, it is characterised in that：Described grid layer is
AlxGa(1-x)N layers, wherein x=0.15-0.35.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201710073037.0A CN106910672A (en) | 2017-02-10 | 2017-02-10 | A kind of semiconductor growing process |
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| CN201710073037.0A CN106910672A (en) | 2017-02-10 | 2017-02-10 | A kind of semiconductor growing process |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110120333A (en) * | 2019-05-20 | 2019-08-13 | 上海华虹宏力半导体制造有限公司 | The method of the mixture manufacturing of silicon semiconductor product and gallium nitride product |
| CN110189989A (en) * | 2019-05-20 | 2019-08-30 | 上海华虹宏力半导体制造有限公司 | The method of the mixture manufacturing of silicon semiconductor product and gallium nitride product |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030033974A1 (en) * | 2001-07-11 | 2003-02-20 | Tetsuzo Ueda | Layered substrates for epitaxial processing, and device |
| CN102549716A (en) * | 2009-12-11 | 2012-07-04 | 国家半导体公司 | Backside stress compensation for gallium nitride or other nitride-based semiconductor devices |
| WO2016209282A1 (en) * | 2015-06-26 | 2016-12-29 | Intel Corporation | Gan devices on engineered silicon substrates |
-
2017
- 2017-02-10 CN CN201710073037.0A patent/CN106910672A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030033974A1 (en) * | 2001-07-11 | 2003-02-20 | Tetsuzo Ueda | Layered substrates for epitaxial processing, and device |
| CN102549716A (en) * | 2009-12-11 | 2012-07-04 | 国家半导体公司 | Backside stress compensation for gallium nitride or other nitride-based semiconductor devices |
| WO2016209282A1 (en) * | 2015-06-26 | 2016-12-29 | Intel Corporation | Gan devices on engineered silicon substrates |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110120333A (en) * | 2019-05-20 | 2019-08-13 | 上海华虹宏力半导体制造有限公司 | The method of the mixture manufacturing of silicon semiconductor product and gallium nitride product |
| CN110189989A (en) * | 2019-05-20 | 2019-08-30 | 上海华虹宏力半导体制造有限公司 | The method of the mixture manufacturing of silicon semiconductor product and gallium nitride product |
| CN110189989B (en) * | 2019-05-20 | 2022-11-04 | 上海华虹宏力半导体制造有限公司 | Method for the hybrid production of silicon semiconductor products and gallium nitride products |
| CN110120333B (en) * | 2019-05-20 | 2022-11-04 | 上海华虹宏力半导体制造有限公司 | Method for the hybrid production of silicon semiconductor products and gallium nitride products |
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Application publication date: 20170630 |