CN106906451B - A kind of electron irradiation preparation method of film surface aluminium oxide quantum dot - Google Patents
A kind of electron irradiation preparation method of film surface aluminium oxide quantum dot Download PDFInfo
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
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Abstract
The present invention relates to a kind of electron irradiation preparation methods of film surface aluminium oxide quantum dot.This method includes the cleaning of substrate；The preparation of aluminium oxide noncrystal membrane；Commercial electronic electrostatic accelerator carries out electron irradiation to the noncrystal membrane of preparation；And irradiation noncrystal membrane is carried out the processing step such as making annealing treatment.Through the above steps, aluminium oxide quantum dot is prepared on aluminium oxide noncrystal membrane surface, and quantum dot distribution density and geometry characteristic parameter can be regulated and controled by control electron irradiation and annealing parameter.Be compared with the prior art, the present invention be in the sub- point of aluminum oxide film surface in situ growth alumina amount, not introduce impurity, technique simple；Gained aluminum oxide film is amorphous state, therefore preferable, of uniform size, fractions distribution the unicity of aluminium oxide quantum null circle shape degree prepared by the present invention is good.And electron irradiation is carried out, it can be achieved that large area prepare with scale and commercial applications using commercial electronic electrostatic accelerator.
Description
Technical field
The invention belongs to technical field of quantum dot preparation, and in particular to a kind of electronics spoke of film surface aluminium oxide quantum dot
According to preparation method.
Background technique
Aluminium oxide quantum dot is a kind of quasi-zero dimension nanostructure, closing electronics and the minimum alumina particle formed, half
Diameter is less than or close to block materials, size is usually between 1nm~100nm.Due to the small scale structures of aluminium oxide quantum dot,
Quasi-continuous energy band is set to develop into discrete energy level structure, to have the totally different property for being different from block materials, including small size effect
It answers, quantum size effect, macro quanta tunnel effect, electronics confinement effect and unique skin effect etc.；Therefore, it shows
The physical property and chemical property of a series of novel.Currently, the preparation method of aluminium oxide quantum dot mainly includes template, precipitating
Method, sol-gel method, hydro-thermal method etc..On the one hand, these methods in the continuous improvement and innovation；On the other hand, also have successively new
Preparation process be introduced into.Wherein, electron beam irradiation method is a kind of quantum dot candidate preparation process of great potential.Electron beam
Irradiance method by carry can electronic action in the various pieces for being illuminated material, the quantum dot of preparation is evenly distributed, geometry
Parameter is easy to regulate and control.Furthermore electron beam irradiation does not need auxiliary generating agent, impurity introducing, product purity is high are avoided.This
Outside, it is growth in situ method that electron beam irradiation, which prepares quantum dot, and process flow is simple, good economy performance.
Currently, being reported using the technology existing research that electron beam irradiation method prepares other metal oxide quantum dots, packet
Include Zinc oxide quantum dot, the titanium oxide quantum dot etc. of electron beam irradiation preparation.But electron beam irradiation used by these techniques
Device is all transmission electron microscope (abbreviation transmission electron microscope), major defect be prepare quantum dot sample size it is smaller, lead to
Often in nanometer to micron dimension, and the quantum dot prepared is primarily adapted for use in scientific research, it is difficult to large-scale commercial application.Together
When, the electronic beam current limited strength of transmission electron microscope, preparation efficiency is low.Especially, currently with being more suitable for industrialized production
The electron irradiation preparation technology of quantum dots of electron electrostatic accelerator is rarely reported.Further, scientific circles do not have with engineering circles yet
There are the technology and research that aluminium oxide quantum dot is prepared using the electronic radiation method based on electron electrostatic accelerator.In consideration of it, through
Seminar's exploratory development of the present invention, desire can provide a kind of electricity of film surface aluminium oxide quantum dot based on electron electrostatic accelerator
The preparation method of son irradiation, makes the aluminium oxide quantum dot with novel physical property and chemical property be more suitable for industrial metaplasia
Production and commercial applications, this is exactly task place of the invention.
Summary of the invention
The purpose of the present invention is exactly the defect and deficiency being directed in the presence of the prior art, provides a kind of film surface oxidation
The electron irradiation preparation method of aluminium quantum dot；This method prepares aluminium oxide noncrystal membrane using reactive sputtering process；Recycle electricity
Sub- electrostatic accelerator irradiation oxidation aluminium noncrystal membrane, finally to irradiation Thin-film anneal processing；Oxidation is prepared in film surface
Aluminium quantum dot.Preparation method of the present invention is to grow the sub- point of alumina amount in aluminum oxide film film surface direct in-situ, is not required to introduce miscellaneous
Matter and technique is simple；Due to carrying out electron irradiation using electron electrostatic accelerator, the system of large area scale may be implemented
Standby aluminium oxide quantum dot and commercial applications.
To achieve the above object, the present invention is realized using the technical solution being made of following technical measures.
A kind of electron irradiation preparation method of film surface aluminium oxide quantum dot of the present invention successively includes below
Processing step:
(1) cleaning treatment of substrate
Substrate for use is cleaned first, oil removing and decontamination cleaning, then be dried with nitrogen or oven drying；Then will
Substrate after cleaning-drying is put into progress plasma backwash cleaning in magnetron sputtering coater；
(2) prepared by aluminium oxide noncrystal membrane
Substrate after the cleaning of plasma backwash is carried out to step (1), is deposited over the substrate using reactive sputtering process
Aluminium oxide noncrystal membrane；
(3) the electron irradiation processing of aluminium oxide noncrystal membrane
By step (2) on the sample stage that the aluminium oxide noncrystal membrane sample of deposition on substrate is placed on electrical isolation, use
Accelerator simultaneously carries out electron irradiation processing to aluminium oxide noncrystal membrane sample with multistep radiation mode；It is big compression ring that it, which irradiates atmosphere,
Border, irradiation temperature are room temperature, to ensure the warming temperature of aluminium oxide noncrystal membrane sample less than 300 DEG C；It can be non-in aluminium oxide
Brilliant film surface grows aluminium oxide quantum dot array；
(4) annealing of aluminium oxide quantum dot
The aluminium oxide quantum dot sample prepared to step (3) through electron irradiation makes annealing treatment, and the specific practice is to use
Heating furnace makes annealing treatment under atmosphere or oxygen atmosphere；300 DEG C~400 DEG C of its annealing temperature, 5 DEG C of heating rate/~10 DEG C/minute
Clock, soaking time 5~20 minutes cool to room temperature with the furnace；It is standard chemical by the way that chemical constituent can be obtained after annealing
Measure ratio, the complete aluminium oxide quantum dot of crystallization.
In above-mentioned technical proposal, step is cleaned substrate described in (1), oil removing and decontamination are cleaned, i.e., successively uses
Nitric acid, acetone, dehydrated alcohol and deionized water clean to substrate in ultrasonic bath, oil removing and decontamination cleaning, when cleaning
Between be 20 minutes.
In above-mentioned technical proposal, the weak inductive of monocrystalline silicon or glass that substrate described in step (1) uses surface smooth
The material and substrate surface roughness (Ra) of energy are less than 20nm.
In above-mentioned technical proposal, plasma backwash cleaning process parameter described in step (1) are as follows: background vacuum < 1 ×
10-4Pa, working gas are Ar gas of the purity higher than 99.95%, backwash cleaning bias is -100V~-500V, backwash cleans air pressure
It is 5~30 minutes for 1.0Pa~5.0Pa, backwash scavenging period.
It is non-that using reactive sputtering process in deposition on substrate aluminium oxide is prepared in above-mentioned technical proposal, described in step (2)
The reactive sputter-deposition technological parameter of brilliant film are as follows: it is Ar and O that the purity of aluminium target used, which is higher than 99.9%, reactive sputtering gas,2
Gaseous mixture, Ar and O2The purity of gas is above 99.95%, Ar/O2The flow-rate ratio of gas is 1:1~5:1, reactive sputtering function
Rate is 50W~500W, reactive sputtering air pressure is 0.1Pa~1.0Pa, depositing temperature is room temperature.
In above-mentioned technical proposal, the aluminium oxide noncrystal membrane of preparation described in step (2) with a thickness of 500nm~2 μm.
In above-mentioned technical proposal, electron irradiation processing is carried out to film sample using accelerator described in step (3), it is described
Accelerator is electron electrostatic accelerator, the technical indicator met are as follows: electron electrostatic accelerator electron energy is in MeV magnitude, electricity
Beamlet intensity of flow is in μ A magnitude, and electron energy and beam intensity are adjustable；The electron beam of Shu Duan is divergent-type out, and is suitble to
In large area radiation treatment.
In above-mentioned technical proposal, the electron electrostatic accelerator carries out at electron irradiation aluminium oxide noncrystal membrane sample
Reason, Electron irradiation technology parameter are as follows: electron energy is 1.0~3.0MeV, the electronic beam current on aluminium oxide noncrystal membrane surface is close
Degree is 0.1 μ A/cm2~0.5 μ A/cm2, its irradiation dose be 1.0 × 1014e/cm2~1.0 × 1016e/cm2, irradiate total time
It is 60~120 minutes.
In above-mentioned technical proposal, the multistep radiation mode of the electron electrostatic accelerator refers to that every irradiation is interrupted after twenty minutes
Once, interrupting the residence time is 10 minutes, then is irradiated 20 minutes, is so recycled 3~6 times.
A kind of electron irradiation preparation method of film surface aluminium oxide quantum dot of the present invention, can be by changing electronics
Electrostatic accelerator beam current density, electron energy and electron irradiation dosage, can regulate and control the distribution density of aluminium oxide quantum dot
With the size of geometry characteristic parameter, such as quantum dot；Meanwhile by changing annealing temperature, heating rate and soaking time
The distribution density and geometry characteristic parameter of aluminium oxide quantum dot, such as the size of quantum dot can also be regulated and controled.
The present invention has the characteristics that and beneficial technical effect compared with prior art:
1, the electron irradiation preparation method of a kind of film surface aluminium oxide quantum dot of the present invention is using electronics electrostatic
Accelerator electronic radiation method prepares aluminium oxide quantum dot in aluminum oxide film film surface, compared with the existing technology, belongs to life in situ
Long technology, the aluminium oxide quantum dot purity is high for not needing auxiliary generating agent and not introducing impurity, preparation.
2, the electron irradiation preparation method of a kind of film surface aluminium oxide quantum dot of the present invention, due to using commercial electricity
Sub- electrostatic accelerator carries out electron irradiation to aluminum oxide film and generates quantum dot, is different from transmission electron microscopy in the prior art
Mirror carries out electron irradiation especially under atmospheric environment, does not need vacuum environment, therefore process flow is eased, economy
It is good；Especially, using commercial electronic electrostatic accelerator, it may be implemented large area prepare with scale, industrialized production and more suitable
Together in commercial applications.
3, the electron irradiation preparation method of a kind of film surface aluminium oxide quantum dot of the present invention, the commercial electronic of use
Electrostatic accelerator, irradiating electron beams characteristic are that electron energy height is in MeV magnitude and belongs to divergence form electron beam；With it is existing
Technology is compared, and the growth mechanism using the aluminium oxide quantum dot of this electron beam irradiation is the Surface charge layer that high energy electron is formed
Caused incorgruous transport mechanism；Meanwhile the aluminum oxide film of deposition be amorphous state, therefore the method for the present invention preparation alumina amount
Circularity is preferable, its is of uniform size, fractions distribution unicity is good for son point.
4, the electron irradiation preparation method of a kind of film surface aluminium oxide quantum dot of the present invention, through commercial electronic electrostatic
The aluminium oxide quantum point of accelerator irradiation is made annealing treatment, can be by changing irradiation and annealing treating process parameter, more
Easily regulate and control the distribution density and geometry characteristic parameter of aluminium oxide quantum dot.
Detailed description of the invention
A kind of electron irradiation preparation method of film surface aluminium oxide quantum dot is used in Fig. 1 embodiment of the present invention 1
The aluminium oxide quantum dot surface topography SEM image of preparation；
A kind of electron irradiation preparation method of film surface aluminium oxide quantum dot is used in Fig. 2 embodiment of the present invention 2
The aluminium oxide quantum dot surface topography SEM image of preparation.
Specific embodiment
Method of the present invention is described in further detail with specific embodiment below, but is not meant to be to this
Any restriction of invention protection content.
Embodiment 1
In the present embodiment 1, a kind of electron irradiation preparation method of film surface aluminium oxide quantum dot, according to front institute
The processing step stated successively is prepared；The accelerator electron irradiation uses commercial electronic electrostatic accelerator, and commercial electronic is quiet
Electric accelerator model JJ-2MV；Magnetron sputtering coater used is QX-500 type magnetron sputtering coater；Heating used
Furnace is box type heater, and the substrate is monocrystalline silicon wafer.
A kind of electron irradiation preparation method of film surface aluminium oxide quantum dot, specifically successively uses described in the present embodiment 1
Processing step below:
(1) step, the cleaning of substrate
The monocrystalline silicon wafer of surface polishing is successively used into analytically pure nitric acid, acetone, dehydrated alcohol and deionized water first
It is cleaned in ultrasonic bath, oil removing and decontamination cleaning, scavenging period is 20 minutes, then with being dried with nitrogen；Then, by monocrystalline
Silicon wafer is put into progress plasma backwash cleaning in QX-500 type magnetron sputtering coater；Backwash cleaning process parameter are as follows: this
Bottom vacuum degree is 5 × 10-5Pa, the Ar gas that backwash cleaning bias is -100V, purity is 99.95% are as working gas, backwash gas
Pressure is 1.0Pa, scavenging period is 5 minutes；And monocrystalline silicon disk surfaces roughness used is less than 20nm；
(2) step, the preparation of aluminium oxide noncrystal membrane
Monocrystalline silicon wafer after the cleaning of plasma backwash is carried out to (1) step, with reactive sputtering process in monocrystalline silicon circle
On piece deposition of aluminium oxide noncrystal membrane, deposition process parameters are as follows: the purity of aluminium target used is 99.99%, is using purity
99.95% Ar and O2Gaseous mixture is as sputter gas, Ar:O2The flow-rate ratio of gas is 1:1, reactive sputtering power is 50W, anti-
Answering sputtering pressure is 0.1Pa, depositing temperature is room temperature；Finally obtain the aluminium oxide noncrystal membrane that deposition thickness is 2 μm；
(3) step, the electron irradiation processing of aluminium oxide noncrystal membrane
The aluminium oxide noncrystal membrane sample that (2) step deposits on monocrystalline silicon wafer is placed on to the sample stage of electrical isolation
On, using JJ-2MV type commercial electronic electrostatic accelerator to aluminium oxide noncrystal membrane sample multistep irradiation side under atmospheric environment
Formula carries out electron irradiation processing, irradiation treatment process parameter are as follows: electron energy 1.0MeV, beam current density are 0.1 μ A/
cm2, irradiation temperature be room temperature, aluminium oxide noncrystal membrane sample be placed on plank base station, its electron irradiation dosage be 1.0 ×
1014e/cm2, its electron irradiation total time be 60 minutes, radiation mode be multistep irradiation method, i.e., it is every irradiation interrupt one after twenty minutes
Secondary, the interruption residence time is 10 minutes, then is irradiated 20 minutes, so circulation 3 times, thus can guarantee aluminium oxide noncrystal membrane sample
Warming temperature be not higher than 300 DEG C；Aluminium oxide quantum dot array can be grown on aluminium oxide noncrystal membrane surface；
(4) step, the annealing of aluminium oxide quantum dot
The aluminium oxide quantum dot sample that (3) step is prepared through electron irradiation is made annealing treatment, the specific practice is to use
Box type heater is made annealing treatment under atmospheric environment, technological parameter are as follows: 300 DEG C of annealing temperature, 5 DEG C/minute of heating rate
Clock, heat preservation 5 minutes, cool to room temperature with the furnace later；Standard stoichiometry ratio, crystalline structure can be obtained by annealing
Aluminium oxide quantum dot sample.
Structure and morphology detection, including following test technology, index are carried out to aluminium oxide quantum dot sample prepared by embodiment 1
And result:
Using the knot of JSM-7500F type field emission scanning electron microscope (SEM) observation film surface aluminium oxide quantum dot
It is configured looks, test technology parameter are as follows: acceleration voltage 200kV, resolution ratio 1nm.As the result is shown: depositing oxygen on monocrystalline silicon wafer
The surface for changing aluminium noncrystal membrane forms aluminium oxide quantum dot, and the geometry of quantum dot is circle；Quantum dot is in film surface
On be evenly distributed, distribution density is about 1450 μm-2；Quantum dot size distribution is more uniform, and average diameter is about 12.3nm；Such as figure
Shown in 1.
Embodiment 2
The preparation method of the present embodiment 2, processing step and electron irradiation instrument used are same as Example 1, wherein technique
Parameter is different, and the substrate is sheet glass；Specifically successively use following processing step:
(1) step, the cleaning of substrate
First by the sheet glass of surface polishing successively with analytically pure nitric acid, acetone, dehydrated alcohol and deionized water super
It is cleaned in sound wave slot, oil removing and decontamination cleaning, scavenging period is 20 minutes, then is dried with oven；Then, sheet glass is put
Enter progress plasma backwash cleaning, backwash cleaning process parameter are as follows: background vacuum in QX-500 type magnetron sputtering coater
It is 5 × 10-5Pa, backwash cleaning bias are -500V, the Ar gas that purity is 99.95% is as working gas, backwash air pressure
5.0Pa, scavenging period are 30 minutes；And glass sheet surface roughness used is less than 20nm；
(2) step, the preparation of aluminium oxide noncrystal membrane
Sheet glass after the cleaning of plasma backwash is carried out to (1) step, is deposited on the glass sheet with reactive sputtering process
Aluminium oxide noncrystal membrane, deposition process parameters are as follows: the purity of aluminium target used is 99.99%, is 99.95% Ar using purity
With O2Gaseous mixture is as reactive sputtering gas, Ar:O2The flow-rate ratio of gas is 5:1, reactive sputtering power is 500W, reactive sputtering
Air pressure is 1.0Pa, depositing temperature is room temperature；Finally obtain the aluminium oxide noncrystal membrane that deposition thickness is 500nm；
(3) step, the electron irradiation processing of aluminium oxide noncrystal membrane
The aluminium oxide noncrystal membrane sample that (2) step deposits on the glass sheet is placed on the sample stage of electrical isolation, is adopted
With JJ-2MV type commercial electronic electrostatic accelerator under atmospheric environment to aluminium oxide noncrystal membrane sample multistep radiation mode into
The processing of row electron irradiation, irradiation technique parameter are as follows: electron energy 3.0MeV, beam current density are 0.5 μ A/cm2, irradiation temperature
Degree is room temperature, aluminium oxide noncrystal membrane sample is placed on plank base station, its electron irradiation dosage is 4.0 × 1015e/cm2,
Electron irradiation total time is 120 minutes, and radiation mode is multistep irradiation method, i.e., every irradiation is interrupted once after twenty minutes, interrupts and stop
Staying the time is 10 minutes, then is irradiated 20 minutes, so circulation 6 times, it is possible thereby to guarantee that the warming temperature of film sample is not higher than
300℃；Aluminium oxide quantum dot array can be grown on aluminium oxide noncrystal membrane surface；
(4) step, the annealing of aluminium oxide quantum dot
The aluminium oxide quantum dot sample of (3) step electron irradiation preparation is made annealing treatment, the specific practice is using case
Formula heating furnace is made annealing treatment under atmospheric environment, technological parameter are as follows: 400 DEG C of annealing temperature, 10 DEG C/minute of heating rate
Clock, soaking time are 20 minutes, cool to room temperature with the furnace later；By make annealing treatment can obtain standard stoichiometry ratio,
The aluminium oxide quantum dot sample of crystalline structure.
Embodiment 2 uses the detection method in the same manner as in Example 1 to aluminium oxide quantum-dot structure pattern.As a result it shows
Show: the aluminum oxide film film surface prepared through embodiment 2 equally also forms aluminium oxide quantum dot, and the geometry of quantum dot is also
Round, size and its distribution are more uniformly.Quantum dot point but relative to the sample in embodiment 1, in the present embodiment 2
Cloth density is smaller, and about 850 μm-2, and average diameter is larger, about 18.1nm, as shown in Figure 2.
By above embodiment it can be confirmed that by a kind of electronics of film surface aluminium oxide quantum dot of the present invention
Irradiating preparation process, the geometrical structure parameter of prepared aluminium oxide quantum dot, aluminum oxide film film surface distribution density with
Electron irradiation technology parameter is closely related；It can effectively regulate and control aluminium oxide quantum dot by changing Electron irradiation technology parameter
Distribution density and geometry feature.
Claims (7)
1. a kind of electron irradiation preparation method of film surface aluminium oxide quantum dot, it is characterised in that successively include technique below
Step:
(1) cleaning treatment of substrate
Substrate for use is cleaned first, oil removing and decontamination cleaning, then be dried with nitrogen or oven drying；It then will cleaning
Substrate after drying is put into progress plasma backwash cleaning in magnetron sputtering coater；
(2) prepared by aluminium oxide noncrystal membrane
Substrate after the cleaning of plasma backwash is carried out to step (1), utilizes reactive sputtering process deposited oxide over the substrate
Aluminium noncrystal membrane；
(3) the electron electrostatic accelerator radiation treatment of aluminium oxide noncrystal membrane
By step (2) on the sample stage that the aluminium oxide noncrystal membrane sample of deposition on substrate is placed on electrical isolation, using electronics
Electrostatic accelerator simultaneously carries out radiation treatment to aluminium oxide noncrystal membrane sample with multistep radiation mode；It is big compression ring that it, which irradiates atmosphere,
Border, irradiation temperature are room temperature, to ensure the warming temperature of aluminium oxide noncrystal membrane sample less than 300 DEG C；It can be non-in aluminium oxide
Brilliant film surface grows aluminium oxide quantum dot array；
(4) annealing of aluminium oxide quantum dot
Step (3) is made annealing treatment through the aluminium oxide quantum dot sample of electron electrostatic accelerator irradiation preparation, the specific practice
It is to be made annealing treatment under atmosphere or oxygen atmosphere using heating furnace；300 DEG C~400 DEG C of its annealing temperature, 5 DEG C of heating rate/~
10 DEG C/min, soaking time 5~20 minutes cools to room temperature with the furnace；By the way that chemical constituent can be obtained after annealing as mark
Quasi- stoichiometric ratio, the complete aluminium oxide quantum dot of crystallization；
The electron electrostatic accelerator meets technical indicator are as follows: electron electrostatic accelerator electron energy is in MeV magnitude, electronic beam current
Intensity is in μ A magnitude, and electron energy and beam intensity are adjustable；The electron beam of Shu Duan is divergent-type out, and is suitable for big face
Product radiation treatment；
The electron electrostatic accelerator irradiation technique parameter are as follows: electron energy is 1.0~3.0MeV, aluminium oxide noncrystal membrane surface
Beam current density be 0.1 μ A/cm2~0.5 μ A/cm2, its irradiation dose be 1.0 × 1014e/cm2~1.0 × 1016e/cm2,
Irradiation time is 60-120 minutes.
2. the electron irradiation preparation method of film surface aluminium oxide quantum dot according to claim 1, it is characterised in that step
Suddenly substrate is cleaned described in (1), oil removing and decontamination cleaning, i.e., successively uses nitric acid, acetone, dehydrated alcohol and deionization
Water cleans to substrate in ultrasonic bath, oil removing and decontamination are cleaned, and scavenging period is 20 minutes.
3. the electron irradiation preparation method of film surface aluminium oxide quantum dot according to claim 1 or 2, it is characterised in that
Substrate described in step (1) is coarse using the material and substrate surface of the weak inductive energy of surface smooth monocrystalline silicon or glass
Degree is less than 20nm.
4. the electron irradiation preparation method of film surface aluminium oxide quantum dot according to claim 1 or 2, it is characterised in that
Plasma backwash cleaning process parameter described in step (1) are as follows: background vacuum < 1 × 10-4Pa, working gas are purity is high
In 99.95% Ar gas, backwash cleaning bias be -100V~-500V, backwash clean air pressure be 1.0Pa~5.0Pa, backwash it is clear
Washing the time is 5~30 minutes.
5. the electron irradiation preparation method of film surface aluminium oxide quantum dot according to claim 1, it is characterised in that step
Suddenly joined using reactive sputtering process in the reactive sputter-deposition technique that deposition on substrate prepares aluminium oxide noncrystal membrane described in (2)
Number are as follows: it is Ar and O that the purity of aluminium target used, which is higher than 99.9%, reactive sputtering gas,2Gaseous mixture, Ar and O2The purity of gas is equal
Higher than 99.95%, Ar/O2The flow-rate ratio of gas is 1:1~5:1, reactive sputtering power is 50W~500W, reactive sputtering air pressure
It is room temperature for 0.1Pa~1.0Pa, depositing temperature.
6. the electron irradiation preparation method of film surface aluminium oxide quantum dot according to claim 1 or 5, it is characterised in that
The aluminium oxide noncrystal membrane of the preparation with a thickness of 500nm~2 μm.
7. the electron irradiation preparation method of film surface aluminium oxide quantum dot according to claim 1, it is characterised in that institute
The multistep radiation mode for stating electron electrostatic accelerator refers to that every irradiation is interrupted once after twenty minutes, and interrupting the residence time is 10 points
Clock, then irradiate 20 minutes, so recycle 3-6 times.
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| CN101973576A (en) * | 2010-11-02 | 2011-02-16 | 上海大学 | Electronic accelerator irradiation and modification method of tin dioxide quantum dots |
| CN102039421A (en) * | 2010-11-30 | 2011-05-04 | 中国科学院理化技术研究所 | Preparation method of organic film monodisperse silver quantum dots |
| CN102026719B (en) * | 2008-03-11 | 2014-12-17 | 免疫之光有限责任公司 | Plasmonic assisted systems and methods for interior energy-activation from an exterior source |
| CN105948021A (en) * | 2016-04-23 | 2016-09-21 | 上海大学 | Method for preparing nitrogen-doped graphene quantum dots by using high-power electron beam irradiation process |
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| CN102026719B (en) * | 2008-03-11 | 2014-12-17 | 免疫之光有限责任公司 | Plasmonic assisted systems and methods for interior energy-activation from an exterior source |
| CN101973576A (en) * | 2010-11-02 | 2011-02-16 | 上海大学 | Electronic accelerator irradiation and modification method of tin dioxide quantum dots |
| CN102039421A (en) * | 2010-11-30 | 2011-05-04 | 中国科学院理化技术研究所 | Preparation method of organic film monodisperse silver quantum dots |
| CN105948021A (en) * | 2016-04-23 | 2016-09-21 | 上海大学 | Method for preparing nitrogen-doped graphene quantum dots by using high-power electron beam irradiation process |
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