CN106898674A - A kind of double-waveband detector - Google Patents
A kind of double-waveband detector Download PDFInfo
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- CN106898674A CN106898674A CN201710185052.4A CN201710185052A CN106898674A CN 106898674 A CN106898674 A CN 106898674A CN 201710185052 A CN201710185052 A CN 201710185052A CN 106898674 A CN106898674 A CN 106898674A
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 30
- 229910052681 coesite Inorganic materials 0.000 claims abstract description 29
- 229910052906 cristobalite Inorganic materials 0.000 claims abstract description 29
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 29
- 229910052682 stishovite Inorganic materials 0.000 claims abstract description 29
- 229910052905 tridymite Inorganic materials 0.000 claims abstract description 29
- 239000010409 thin film Substances 0.000 claims abstract description 24
- 239000000758 substrate Substances 0.000 claims abstract description 22
- 238000009413 insulation Methods 0.000 claims abstract description 19
- 238000002161 passivation Methods 0.000 claims abstract description 19
- 230000009977 dual effect Effects 0.000 claims abstract description 16
- 229910052594 sapphire Inorganic materials 0.000 claims abstract description 3
- 239000010980 sapphire Substances 0.000 claims abstract description 3
- 238000005566 electron beam evaporation Methods 0.000 claims description 5
- 229910002340 LaNiO3 Inorganic materials 0.000 claims description 4
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 4
- 230000005611 electricity Effects 0.000 claims description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims 1
- 238000010521 absorption reaction Methods 0.000 claims 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims 1
- 229910052593 corundum Inorganic materials 0.000 claims 1
- 239000010437 gem Substances 0.000 claims 1
- 229910001751 gemstone Inorganic materials 0.000 claims 1
- 229910001845 yogo sapphire Inorganic materials 0.000 claims 1
- 238000001514 detection method Methods 0.000 description 19
- 238000000825 ultraviolet detection Methods 0.000 description 10
- 238000012544 monitoring process Methods 0.000 description 6
- 230000003287 optical effect Effects 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 5
- 230000005855 radiation Effects 0.000 description 5
- 239000010408 film Substances 0.000 description 4
- 230000005616 pyroelectricity Effects 0.000 description 3
- 229910002353 SrRuO3 Inorganic materials 0.000 description 2
- 230000005670 electromagnetic radiation Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(IV) oxide Inorganic materials O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 210000004556 brain Anatomy 0.000 description 1
- 239000003245 coal Substances 0.000 description 1
- 238000002485 combustion reaction Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000007717 exclusion Effects 0.000 description 1
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
- H01L31/105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PIN type
Abstract
A kind of two-sided infrared/ultraviolet dual wave-band detector, including：Substrate, grows N-type GaN layer thereon；First area and second area are divided in N-type GaN layer, i type GaN layers are made on first area；Growth P-type GaN layer in i type GaN layers；Ni/Au electrodes are made in p-type GaN layer；Second area makes SiO2Passivation layer, SiO2Porous SiO is made on passivation layer2Thermal insulation layer, porous SiO2Infrared heat absorbing layer is made on thermal insulation layer, pzt thin film layer and bottom electrode are made on infrared heat absorbing layer, Top electrode is made on pzt thin film layer；The position that Sapphire Substrate lower surface corresponds to second area makes GaN cushions, and SiO is made on GaN cushions2Passivation layer, SiO2Porous SiO is made on passivation layer2Thermal insulation layer, porous SiO2Infrared heat absorbing layer is made on thermal insulation layer, pzt thin film layer is made on infrared heat absorbing layer, Top electrode is made on pzt thin film layer.
Description
Technical field
The present invention relates to the technical field of semiconductor devices, more particularly, to the two-sided infrared/ultraviolet dual wave-band detection of one kind
Device.
Background technology
Ultraviolet light refers to the electromagnetic radiation that wave-length coverage is 10 nm-400 nm, its spectrum in visible ray purple light it is outer
Side.Ultraviolet detection technology can be widely used in missile brain, Ultraviolet Communication technology, biological medicine analysis, ozone monitoring, purple
The field widely such as outer resin solidification, combustion enginnering, solar illumination monitoring, public security scouting.With the development of science and technology, ultraviolet
What Detection Techniques were obtained in terms of military and civilian is widely applied.
Infrared light refers to electromagnetic radiation of the wave-length coverage in 700nm ~ 1mm, corresponding photon energy range 1.24meV ~
1.7eV.Any temperature higher than absolute zero object all in ceaselessly emitting infrared radiation, the temperature of object is higher launched
Infrared radiation wavelength is shorter, otherwise the infrared radiation wavelength of the lower transmitting of temperature is more long.Infrared detection technique weather forecast,
Looks, environmental monitoring, remote sensing resources investigation, underground coal mine thermometric and survey gas in and concealed fire detection, fire-fighting and petrochemical industry alarm
And being obtained in medical treatment and Three Essential Factors of Forest Fire is widely applied.
Ultraviolet light is decayed comparatively fast in surface air, and, in 500 m or so, infrared light can be to target for effective detection range
Carry out remote identification and follow the trail of, but the wave band background radiation intensity is larger in air.If can obtain simultaneously it is ultraviolet and
The information of infrared two wave bands, it becomes possible to realize remote and closely monitoring, it becomes possible to improve and follow the trail of the identification of target
Effect, reduces the influence of background radiation, reduces false alarm rate, has weight in fields such as fire monitoring, indoor and outdoor fire-fighting and security monitorings
The application prospect wanted.Further, this dual-color detection is realized by individual devices, both share an optical system, can be with
The cost and volume of reduction equipment, extend its range of application.
In the prior art, infrared/ultraviolet two-color detector by semiconductor fine processing technology by infrared detection members with
And ultraviolet detection is partially integrated on one single chip, infrared/ultraviolet two-color detector is formed.But, existing infrared/UV double
Chromakey detector all enters can be used in the detection of one side incident light, and cannot realize the detection of two-side incidence light.
The content of the invention
The invention provides the two-sided infrared/ultraviolet dual wave-band detector of one kind, can realize all entering for two-side incidence light
Row detection.
As one aspect of the present invention, there is provided a kind of two-sided infrared/ultraviolet dual wave-band detector, including：Substrate, its
Upper growth N-type GaN layer；First area and second area are divided in the N-type GaN layer, i types GaN is made on the first area
Layer, side makes In/ Au electrodes；Growth P-type GaN layer in the i types GaN layer；Ni/Au electricity is made in the p-type GaN layer
Pole；The second area makes SiO2Passivation layer, the SiO2Porous SiO is made on passivation layer2Thermal insulation layer, the porous SiO2
Infrared heat absorbing layer is made on thermal insulation layer, pzt thin film layer and bottom electrode are made on the infrared heat absorbing layer, the PZT is thin
Top electrode is made in film layer；The position that the Sapphire Substrate lower surface corresponds to second area makes GaN cushions, described
SiO is made on GaN cushions2Passivation layer, the SiO2Porous SiO is made on passivation layer2Thermal insulation layer, the porous SiO2It is heat-insulated
Infrared heat absorbing layer is made on layer, pzt thin film layer and bottom electrode, the pzt thin film layer are made on the infrared heat absorbing layer
Upper making Top electrode.
Preferably, the p-type GaN layer for "" type structure, intermediate portion carries out thinning operation.
Preferably, ultraviolet detection part enters light p-i-n structure in front incidence optical detection using front, overleaf enters
Enter light p-i-n structure using the back side when penetrating optical detection.
Preferably, the In/ Au electrodes are formed by electron beam evaporation.
Preferably, the Ni/Au electrodes are formed by electron beam evaporation.
Preferably, the infrared heat absorbing layer is LaNiO3.
Preferably, the bottom electrode is Au electrodes.
Preferably, the Top electrode is Pt electrodes.
Preferably, there is interval between the first area and second area, in interval setting infrared block layer.
Preferably, identical infrared block layer is set at the substrate mirror image back side of infrared block layer.
Preferably, the infrared block layer is metal film.
Brief description of the drawings
Fig. 1 is the structural representation of the two-sided infrared/ultraviolet dual wave-band detector of the embodiment of the present invention.
Fig. 2 is the structural representation of the two-sided infrared/ultraviolet dual wave-band detector of the preferred embodiment of the present invention.
Fig. 3 is the structural representation of the two-sided infrared/ultraviolet dual wave-band detector of further preferred embodiments of the present invention.
Specific embodiment
Embodiments of the invention are described below in detail, the example of the embodiment is shown in the drawings, wherein from start to finish
Same or similar label represents same or similar element or the element with same or like function.Below with reference to attached
It is exemplary to scheme the embodiment of description, is only used for explaining the present invention, and is not considered as limiting the invention.And, should
Work as understanding, the feature not mutual exclusion of various embodiments described here, and can be combined and transformation mistake various
Exist in journey.
Two-sided infrared/ultraviolet dual wave-band the detector of one embodiment of the invention, referring to Fig. 1, including substrate 10, N-type GaN
Layer 20, i types GaN layer 30, p-type GaN layer 40, SiO2Passivation layer 50, porous SiO2Thermal insulation layer 60, infrared heat absorbing layer 70, PZT is thin
Film layer 80, GaN cushions 90, SiO2Passivation layer 150, porous SiO2Thermal insulation layer 160, infrared heat absorbing layer 170, pzt thin film layer
180。
Substrate 10 is used to grow epitaxial material, and it can be sapphire（Al2O3）Substrate, carborundum（SiC）Substrate, nitridation
Aluminium（AlN）Substrate.N-type GaN layer 20 is grown on substrate 10, can be by HVPE, MOCVD method or MBE methods in substrate 10
The N-type GaN layer 20 of upper growth 50nm~600nm.
First area 21 and second area 22 are divided in N-type GaN layer 20.First area 21 is used for ultraviolet detector, first
I types GaN layer 30 is made on region 21, the thickness of i types GaN30 is 100nm~300nm.The side of first area 21 makes In/
Au electrodes 211.Growth P-type GaN layer 40 in i types GaN layer 30, the thickness of p-type GaN layer 40 is 100nm~300nm, is preferably provided with
It is 200nm.Ni/Au electrodes 401 are made in p-type GaN layer 40.
Ultraviolet detection region enters light p-i-n structure in front incidence optical detection using front, and overleaf incident light is visited
Enter light p-i-n structure using the back side during survey.The incident ultraviolet light in front is incident from p-type GaN layer 40, the quilt in i types GaN layer 30
Absorb, the electron-hole pair of generation is separated by the built in field in n areas and p areas, produce electric signal output.Back surface incident it is ultraviolet
Light is incident from substrate 10, is absorbed in i types GaN layer 30, and the electron-hole pair of generation is by the built in field in n areas and p areas point
Open, produce electric signal output.
Second area 22 is used for infrared light detecting, and SiO is made on second area 222Passivation layer 50, SiO2Made on passivation layer 50
Make porous SiO2Thermal insulation layer 60.SiO2Passivation layer 50 and porous SiO2The thickness of thermal insulation layer 60 is 100nm~200nm.It is porous
SiO2Infrared heat absorbing layer 70 is made on thermal insulation layer 60, infrared heat absorbing layer 70 could be arranged to LaNiO3, SrRuO3, RuO2Layer,
The thickness of infrared heat absorbing layer 70 is 100nm~200nm.
Pzt thin film layer 80 and bottom electrode 71 are made on infrared heat absorbing layer 70, pzt thin film layer 80 is infrared light detecting
Layer, thermal signal is converted into electric signal by it, and pzt thin film 80 thickness of layer are 200nm~300nm.Bottom electrode 71 is Au electrodes.PZT
Top electrode 81 is made in film layer 80, Top electrode 81 is Pt electrodes.
The position that the lower surface of substrate 10 corresponds to second area 22 makes GaN cushions 90, and the thickness of GaN cushions 90 is
100nm~200nm, GaN cushion 90 is outer to make SiO2Passivation layer 150, SiO2Passivation layer 150 is outer to make porous SiO2Thermal insulation layer
160。SiO2Passivation layer 150 and porous SiO2The thickness of thermal insulation layer 160 is 100nm~200nm.Porous SiO2Outside thermal insulation layer 160
Infrared heat absorbing layer 170 is made, infrared heat absorbing layer 170 could be arranged to LaNiO3、SrRuO3, RuO2Layer, infrared heat absorbing layer
170 thickness is 100nm~200nm.
Pzt thin film layer 180 and bottom electrode 171 are made on infrared heat absorbing layer 170, pzt thin film layer 180 is visited for infrared light
Layer is surveyed, thermal signal is converted into electric signal by it, and pzt thin film 180 thickness of layer are 200nm~300nm.Bottom electrode 171 is Au electrodes.
Top electrode 181 is made on pzt thin film layer 180, Top electrode 181 is Pt electrodes.
Infrared detection area produces pyroelectricity signal, pyroelectricity signal to lead to when front lighting is incident by pzt thin film layer 80
Cross infrared heat absorbing layer 70 and Top electrode 81 is exported.Infrared acquisition remaining when overleaf light is incident, produced by pzt thin film layer 180
Heat releases electric signal, and pyroelectricity signal is exported by infrared heat absorbing layer 170 and Top electrode 181.
It is ultraviolet by the setting of infrared acquisition area in the above embodiment of the present invention and the structure and position in ultraviolet detection area
Search coverage enters light p-i-n structure in front incidence optical detection using front, and the back side is overleaf used during incident optical detection
Enter light p-i-n structure, infrared detection area is detected using the detecting structure at substrate face and the back side respectively, makes the present invention
Two-sided infrared/ultraviolet dual wave-band detector, can the infrared/ultraviolet light incident for front/back can detect,
And infrared and ultraviolet detector region does not interfere with each other, it is achieved thereby that the function of two-sided detection.
The preferred embodiment of the present invention is with first embodiment difference referring to Fig. 2, in order to avoid ultraviolet detection region
When front is incident p-type GaN structures for ultraviolet light loss, p-type GaN layer 40 be set to "" type structure, it is middle
Position is incidence window, carries out thinning, and both sides make Ni/Au electrodes 401.
Further preferred embodiment, referring to Fig. 3, because ultraviolet detection area can not fully absorb for infrared light, from
The incident infrared light of ultraviolet detection field side, partly may pass through ultraviolet detection area, be irradiated to the infrared of infrared detection area
On detecting layer pzt thin film layer 80 or pzt thin film layer 180.In order to avoid the influence of the part infrared light, as shown in figure 3,
Interval is set between one region 21 and second area 22, in interval setting infrared block layer 23.The height of infrared block layer 23
Higher than the height of infrared heat absorbing layer 70, infrared block layer 23 can be metal film, be grown in interval by electron beam evaporation,
The infrared light that will transmit through ultraviolet detection area is stopped.Meanwhile, at the mirror image back side of substrate 10 of infrared block layer 23, phase is set
Same infrared block layer 123, it is highly higher than the height of infrared heat absorbing layer 170.
Presently preferred embodiments of the present invention is the foregoing is only, is not intended to limit the scope of the present invention.This hair
Specific features, structure, material or feature described in bright can be in any one or more embodiments or example with suitable
Mode is combined.Additionally, in the case of not conflicting, those skilled in the art can be by the difference described in this specification
The feature of embodiment or example and different embodiments or example is combined and combines.It is all the spirit and principles in the present invention it
Interior made any modification, equivalent substitution and improvements etc., are all contained in protection scope of the present invention.
Claims (6)
1. a kind of two-sided infrared/ultraviolet dual wave-band detector, including：Substrate, grows N-type GaN layer thereon；In the N-type GaN layer
First area and second area are divided, i type GaN layers are made on the first area, side makes In/ Au electrodes；The i types
Growth P-type GaN layer in GaN layer；Ni/Au electrodes are made in the p-type GaN layer；The second area makes SiO2Passivation layer, institute
State SiO2Porous SiO is made on passivation layer2Thermal insulation layer, the porous SO2Infrared heat absorbing layer is made on thermal insulation layer, it is described infrared
Pzt thin film layer and bottom electrode are made on heat absorbing layer, Top electrode is made on the pzt thin film layer；Under the Sapphire Substrate
The position that surface corresponds to second area makes GaN cushions, and SiO is made on the GaN cushions2Passivation layer, the SiO2It is blunt
Change and make porous SiO on layer2Thermal insulation layer, the porous SiO2Infrared heat absorbing layer, the infrared heat absorbing layer are made on thermal insulation layer
Upper making pzt thin film layer and bottom electrode, Top electrode is made on the pzt thin film layer.
2. two-sided infrared/ultraviolet dual wave-band detector according to claim 1, it is characterised in that：The substrate is blue precious
Stone（Al2O3）Substrate, carborundum（SiC）Substrate, aluminium nitride（AlN）Substrate.
3. two-sided infrared/ultraviolet dual wave-band detector according to claim 2, it is characterised in that：The In/ Au electrodes
Formed by electron beam evaporation.
4. two-sided infrared/ultraviolet dual wave-band detector according to claim 3, it is characterised in that：The Ni/Au electrodes lead to
Electron beam evaporation is crossed to be formed.
5. two-sided infrared/ultraviolet dual wave-band detector according to claim 4, it is characterised in that：The infrared heat absorption
Layer is LaNiO3。
Two-sided infrared/ultraviolet dual wave-band detector according to claim 5, it is characterised in that：The bottom electrode is Au electricity
Pole.
6. two-sided infrared/ultraviolet dual wave-band detector according to claim 6, it is characterised in that：The Top electrode is Pt
Electrode.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201710185052.4A CN106898674A (en) | 2017-03-25 | 2017-03-25 | A kind of double-waveband detector |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710185052.4A CN106898674A (en) | 2017-03-25 | 2017-03-25 | A kind of double-waveband detector |
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ID=59193788
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107331718A (en) * | 2017-06-30 | 2017-11-07 | 西安电子科技大学 | Double-waveband detector and preparation method based on indium selenide and gallium nitride |
| CN111739972A (en) * | 2020-07-01 | 2020-10-02 | 中国科学院上海技术物理研究所 | Double-sided annular Ge-based long-wave infrared and terahertz detector and preparation method thereof |
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|---|---|---|---|---|
| US5182670A (en) * | 1991-08-30 | 1993-01-26 | Apa Optics, Inc. | Narrow band algan filter |
| CN101211958A (en) * | 2007-12-21 | 2008-07-02 | 中国科学院上海技术物理研究所 | Aluminum gallium nitrogen -lead zirconat-titanate focal plane detector |
| CN101586985A (en) * | 2008-05-23 | 2009-11-25 | 中国电子科技集团公司第十三研究所 | Integrated uncooled ir/ultraviolet two-color detector of monolithic and manufacture method thereof |
-
2017
- 2017-03-25 CN CN201710185052.4A patent/CN106898674A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5182670A (en) * | 1991-08-30 | 1993-01-26 | Apa Optics, Inc. | Narrow band algan filter |
| CN101211958A (en) * | 2007-12-21 | 2008-07-02 | 中国科学院上海技术物理研究所 | Aluminum gallium nitrogen -lead zirconat-titanate focal plane detector |
| CN101586985A (en) * | 2008-05-23 | 2009-11-25 | 中国电子科技集团公司第十三研究所 | Integrated uncooled ir/ultraviolet two-color detector of monolithic and manufacture method thereof |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107331718A (en) * | 2017-06-30 | 2017-11-07 | 西安电子科技大学 | Double-waveband detector and preparation method based on indium selenide and gallium nitride |
| CN107331718B (en) * | 2017-06-30 | 2019-04-23 | 西安电子科技大学 | Double-waveband detector and preparation method based on indium selenide and gallium nitride |
| CN111739972A (en) * | 2020-07-01 | 2020-10-02 | 中国科学院上海技术物理研究所 | Double-sided annular Ge-based long-wave infrared and terahertz detector and preparation method thereof |
| CN111739972B (en) * | 2020-07-01 | 2023-11-10 | 中国科学院上海技术物理研究所 | Double-sided annular Ge-based long-wave infrared and terahertz detector and preparation method |
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Effective date of abandoning: 20190215 |