CN106876229B - A kind of contact conductor unit, vacuum photoelectric device and preparation method thereof - Google Patents
A kind of contact conductor unit, vacuum photoelectric device and preparation method thereof Download PDFInfo
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- CN106876229B CN106876229B CN201611258814.0A CN201611258814A CN106876229B CN 106876229 B CN106876229 B CN 106876229B CN 201611258814 A CN201611258814 A CN 201611258814A CN 106876229 B CN106876229 B CN 106876229B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/248—Components associated with high voltage supply
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J43/00—Secondary-emission tubes; Electron-multiplier tubes
- H01J43/04—Electron multipliers
- H01J43/06—Electrode arrangements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/24—Manufacture or joining of vessels, leading-in conductors or bases
- H01J9/32—Sealing leading-in conductors
Abstract
The invention belongs to photoelectric device technical fields, are related to a kind of contact conductor unit, vacuum photoelectric device and preparation method thereof.The contact conductor unit includes glass substrate, glass shell and multiple electrodes lead；Glass shell is fused to the surface of glass substrate；Contact conductor is distributed on the face of weld of glass shell and glass substrate, and contact conductor one end is located at the inside of glass shell, and the other end of contact conductor is located at the outside of glass shell.The contact conductor unit that the present invention makes therefore can make the vacuum photoelectric device with a read-out channels up to a hundred from the limitation of anode end kovar alloy silk diameter.Electrode size minimum can arrive some tens of pm, beneficial to the making for realizing high-density electrode lead, suitable for a variety of vacuum photoelectric devices such as hybrid optical electric explorer, multi-anode photomultiplier, have wide practical use in multiple fields such as high-energy physics, interplanetary probe, lll night vision, Medical Instruments.
Description
Technical field
The invention belongs to photoelectric device technical fields, are related to a kind of contact conductor unit, vacuum photoelectric device and its making
Method.
Background technology
Vacuum photoelectric device is due to its excellent performance, such as high sensitivity, Fast Time Response, large effective area, low dark electricity
Stream and excellent environmental suitability etc., in high-energy physics, astrophysics, Medical Instruments, laser radar, lll night vision, environment
The multiple fields such as monitoring and plasma diagnostics have important application, are an important branch of photoelectric detector.
Vacuum photoelectric device is mainly made of entrance window, photocathode, electron-optical system, electron multiplier, anode.Its
Middle photocathode is attached on entrance window, for incident optical signal to be converted into electric signal；Electron-optical system is mainly realized
The functions such as acceleration, focusing and deflection to electronics；Electron multiplier can generate very big electron gain, for being put to electric signal
Greatly；Anode is used to be received and read out final signal.
Since vacuum photoelectric device is a kind of vacuum-packed sensitive detection parts, adopted to be connected progress signal with external circuit
Collection and processing, it is necessary to have contact conductor unicom device internal electrode and external circuit, therefore the making of contact conductor is vacuum light
An important process process prepared by electrical part.
Fig. 1 is the structure diagram of traditional MicroChannel plate sensitive detection parts, including entrance window 11, photocathode 12,
Microchannel plate 13, anode 14, stem 15, electrode connecting line 16, shell 17 and the kovar alloy silk 18 welded on stem.Wherein
Entrance window 11, shell 17 and stem 15 are put by vacuum seal process seal, photocathode 12, microchannel plate 13 and anode 14
In vacuum.Kovar alloy silk is welded by way of high temperature welding with core glass column, and one end of kovar alloy silk is placed in vacuum
Inside is connected by electrode connecting line 16 with each electrode of photoelectric detector, and the other end of kovar alloy silk is placed in outside vacuum
Portion can be connected the detection for carrying out signal with external circuit.
In patent CN101877297A, CN105424176A, CN103915311A, CN104733272A, US6285018B1
In, vacuum photoelectric device contact conductor is connected by the stem of bottom device, and the effect of wherein stem is each electrode of support
Part and electrode are drawn, and the effect of contact conductor is current lead-through.The specific implementation that this contact conductor makes is：The
One, form stem.Stem is formed by glass and kovar alloy silk high temperature welding, and kovar alloy silk is made of iron nickel cobalt metal, directly
About 1 millimeter of footpath, coefficient of thermal expansion is close with glass.At high temperature, glass welding surface melting softening and with kovar alloy silk
The oxide layer on surface reacts, and metallurgical binding face is formed, so as to obtain good hermetic seal structure.Second, connection electricity
Pole lead.Each electrode part in the one side of contact conductor and device, such as cathode, dynode, anode pass through metal spot welding
Technique connects, the kovar alloy silk spot welding connection in the opposite side and stem of contact conductor, and the electronics moved in device is final
It is exported by lead and stem.Finally, the other parts sealing-in of stem and device, forms vacuum-packed environment.
This technique for making contact conductor is easier to realize, and production cost is low, but there are following problems：
1st, stem making need first kovar alloy silk table face formed oxide layer then again with beading, these mistakes
Journey has the temperature of technique, time, atmosphere etc. strict requirements, and process parameter control is improper easily to directly result in welding failure
Or subsequently using process, since slow gas leakage causes the reduction of device performance, reliability is restricted device.
2nd, due to the difference between kovar alloy silk and thermal expansion coefficient of glass, device carries out photocathode and swashs at high temperature
During technique living, because thermal stress cannot be released effectively stem can be caused to burst, so as to cause the failure of element manufacturing, therefore device
Success rate prepared by part cannot be protected.
3rd, due to the limitation of kovar alloy silk diameter, if to make highdensity contact conductor (such as larger than 256 electricity
Pole), the volume for making stem is increased exponentially, device weight increases, and the phenomenon that once leaks air also is difficult to detect, and adds device
The difficulty and cost that part makes.
In conclusion the making of vacuum photoelectric device depends on efficient, reliable contact conductor production method；It is new at some
In the vacuum photoelectric device of type, such as the multianode micro-channel type photoelectricity times of hybrid optical electric explorer or high-spatial and temporal resolution
Increase pipe, it is necessary to up to a hundred even more contact conductors.Therefore, existing vacuum photoelectric device production method is difficult to meet need
It asks, especially cannot be used for making the vacuum photoelectric device of the high position resolution of multichannel.
The content of the invention
In order to solve the technical issues of existing vacuum photoelectric device production method can not meet multi-electrode lead demand, this
Invention provides a kind of contact conductor unit, vacuum photoelectric device and preparation method thereof.
The present invention technical solution be：A kind of contact conductor unit, is characterized in that：Including glass substrate,
Glass shell and multiple electrodes lead；The glass shell is fused to the surface of glass substrate；The contact conductor is distributed in glass
On the face of weld of glass shell and glass substrate, contact conductor one end is located at the inside of glass shell, the other end position of contact conductor
In the outside of glass shell.
Preferably, above-mentioned contact conductor is the metallic film of the strip made on the glass substrate of semiconductor technology.
Preferably, above-mentioned metallic film is single metallic film or the stacked structure of various metals film.
The present invention also provides a kind of production methods of contact conductor unit, are characterized in that：Comprise the following steps：
1) glass substrate is prepared；
2) contact conductor is made：Contact conductor is made using semiconductor technology on the glass substrate；The contact conductor is
The stacked structure of single metallic film or various metals film；
3) welding glass shell：The installation position coating glass powder with low melting point of glass shell on the glass substrate, glass
The coating width of powder is more than the thickness of glass shell and less than the length of contact conductor；Glass is formed after glass dust is heating and curing
Glue；Glass shell is positioned on glass cement, contact conductor one end is made to be located on the inside of glass shell, the other end position of contact conductor
In the outside of glass shell；Heating makes glass shell bond together with glass substrate by glass cement in vacuum drying oven；Cooling
After take out, complete contact conductor unit making.
Preferably, the production method of above-mentioned contact conductor unit further include step 4) to the contact conductor unit made into
Row vacuum leak hunting.
The present invention also provides a kind of vacuum photoelectric device based on above-mentioned contact conductor unit, including entrance window, cathode list
Member and anode unit, are characterized in that：Further include contact conductor unit；
The contact conductor unit includes glass substrate, glass shell and multiple electrodes lead；The glass shell welding
In the surface of glass substrate；The contact conductor is distributed on the face of weld of glass shell and glass substrate；The contact conductor
One end is located at the inside of glass shell, is connected by electrode connecting line with anode unit；The other end of the contact conductor is located at
The outside of glass shell；
The entrance window is located at the top of glass shell, and the entrance window, glass shell and glass substrate surround close jointly
The vacuum chamber closed, the anode unit and cathode electrode unit are respectively positioned in vacuum chamber；The anode unit is fixed on glass substrate,
The cathode electrode unit is fixed on entrance window bottom.
Preferably, above-mentioned anode unit is the anode array made on the glass substrate of semiconductor technology；The sun
Microchannel plate is installed between pole array and photocathode.
Preferably, above-mentioned anode unit is affixed to the semiconductor optoelectronic detecting element on glass substrate.
The present invention also provides a kind of production method of the vacuum photoelectric device based on above-mentioned contact conductor unit, it is special it
Be in：Comprise the following steps：
1) glass substrate is prepared；
2) contact conductor is made：Contact conductor is made using semiconductor technology on the glass substrate；The contact conductor is
The stacked structure of single metallic film or various metals film；
3) anode array is made using semiconductor technology on the glass substrate；
4) welding glass shell：The installation position coating glass powder with low melting point of glass shell on the glass substrate, glass
The coating width of powder is more than the thickness of glass shell and less than the length of contact conductor；Glass is formed after glass dust is heating and curing
Glue；Glass shell is positioned on glass cement, contact conductor one end is made to be located on the inside of glass shell, the other end position of contact conductor
In the outside of glass shell；Heating makes glass shell bond together with glass substrate by glass cement in vacuum drying oven, cools down
After take out；
5) anode array is connected with contact conductor by conducting using lead key closing process；
6) after microchannel plate being installed, then the entrance window and the upper end vacuum sealing of glass shell that photocathode will be attached with,
Form multianode microchannel plate Vacuum Photoelectric Detectors.
It is special the present invention also provides the production method of vacuum photoelectric device of the another kind based on above-mentioned contact conductor unit
Part is：Comprise the following steps：
1) glass substrate is prepared；
2) contact conductor is made：Contact conductor is made using semiconductor technology on the glass substrate；The contact conductor is
The stacked structure of single metallic film or various metals film；
3) semiconductor optoelectronic detecting element is fixed on glass substrate；
4) semiconductor optoelectronic detecting element is connected with contact conductor by conducting using lead key closing process；
5) welding glass shell：The installation position coating glass powder with low melting point of glass shell on the glass substrate, glass
The coating width of powder is more than the thickness of glass shell and less than the length of contact conductor；Glass is formed after glass dust is heating and curing
Glue；Glass shell is positioned on glass cement, contact conductor one end is made to be located on the inside of glass shell, the other end position of contact conductor
In the outside of glass shell；Heating makes glass shell bond together with glass substrate by glass cement in vacuum drying oven, cools down
After take out；
6) entrance window and the upper end vacuum sealing of glass shell that will be attached with photocathode forms mixed type vacuum photoelectricity
Detector.
The beneficial effects of the present invention are：
(1) making of contact conductor unit employs ripe semiconductor technology realization, simple for process, cost in the present invention
It is low, it is easy to mass produce, and avoid the device caused by coefficient of thermal expansion mismatches and burst or slow gas leak phenomenon, make true
The more reliable performance of pocket part.
(2) compared with carrying out electrode connection using stem, the method for making contact conductor in the present invention does not have metal pins,
The vacuum photoelectric device for making making is small, light-weight, compacter.
(3) contact conductor that makes of the present invention therefore can make tool from the limitation of anode end kovar alloy silk diameter
There is the detector of a read-out channels up to a hundred.Electrode size minimum can arrive some tens of pm, beneficial to realization high-density electrode lead
It makes, suitable for a variety of vacuum photoelectric devices such as hybrid optical electric explorer, multi-anode photomultiplier, position resolution can be excellent
In 50 microns, have wide practical use in multiple fields such as high-energy physics, interplanetary probe, lll night vision, Medical Instruments.
Description of the drawings
Fig. 1 is the structure diagram of traditional MicroChannel plate sensitive detection parts.
Fig. 2 is the preferable implementation flow chart that the present invention makes contact conductor unit.
Fig. 3 is the preferable distribution schematic diagram of contact conductor on the glass substrate in the present invention.
Fig. 4 is the posetionof weld schematic diagram of glass shell on the glass substrate in the present invention.
Fig. 5 is the anode unit electrode connection of the multianode microchannel plate Vacuum Photoelectric Detectors in the embodiment of the present invention one
Schematic diagram.
Fig. 6 is the dimensional structure diagram of the multianode microchannel plate Vacuum Photoelectric Detectors in the embodiment of the present invention one.
Fig. 7 is the anode unit electrode connection diagram of the mixed type Vacuum Photoelectric Detectors in the embodiment of the present invention two.
Fig. 8 is the dimensional structure diagram of the mixed type Vacuum Photoelectric Detectors in the embodiment of the present invention two.
Specific embodiment
Referring to Fig. 2, the preferable implementation that the present invention makes contact conductor unit mainly includes the following steps that：
First, the preparation of glass substrate.The material of usual glass substrate is Pyrex, and thickness is 2 millimeters, and surface is put down
Whole, the size of glass substrate is more than 20 millimeters × 20 millimeters, and being cleaned by ultrasonic clean and high temperature using glass cleaner dries.
Second, the making of contact conductor.Contact conductor is made using the semiconductor technology of standard on the glass substrate.Standard
Semiconductor technology include deposit metal films, photoetching, etching or corrosion or stripping etc., it is single that gold, silver etc. may be selected in metallic film
The stacked structure of the various metals film such as one metal or titanium platinum, the thickness of metallic film are more than 500 nanometers.Fig. 3 is in glass
A kind of typical contact conductor distribution formed on glass substrate, contact conductor 21 are distributed in the Surface Edge of glass substrate 22
Edge.The size of contact conductor can change according to the size of electrode number and glass substrate, in glass substrate and electrode number one
Require contact conductor size as big as possible in the case of fixed, to carry sufficiently large electric current.Typical contact conductor size is 1
Millimeter × 6 millimeters, the spacing between contact conductor are 0.5 millimeter.
3rd, the welding of glass substrate and glass shell.The length of side of typical glass shell is that the length of side of glass substrate subtracts
4 millimeters are gone, the thickness of glass shell is 2 millimeters, and the height of glass shell is more than 5 millimeters.Glass powder with low melting point is applied first
In glass substrate edge, the width of glass dust coating is less than 3 millimeters, after hot setting forms glass cement, glass shell is placed
In on glass cement, being sent into heating in vacuum drying oven, heating temperature is the fusion temperature of slightly above glass cement.After glass cement melts,
Glass shell is just bonded together with glass substrate, is taken out after cooling.As shown in figure 4, glass shell 23 is fused to glass substrate
On, the inner end of contact conductor is in the inside of glass shell 23, and the outer end of contact conductor is in the outside of glass shell 23.Contact conductor
21 other parts are covered by glass cement, will not form short circuit.
4th, vacuum leak hunting is carried out to the vacuum photoelectric device made, leak rate need to be less than 10-10Pa·m3/s。
The present invention also provides a kind of vacuum photoelectric device based on more than contact conductor unit, i.e. multianode microchannel plate is true
Empty photodetector.
Fig. 5 is the anode unit electrode connection diagram of multianode microchannel plate Vacuum Photoelectric Detectors.It is different from Fig. 4
It is to construct anode unit 31 and electrode on the glass substrate using with making the same semiconductor fabrication process of contact conductor
The current lead-through passage that connecting line 32 forms.Typically, each anode unit is square structure, and size is 0.5 millimeter, adjacent sun
0.5 millimeter is spaced between pole unit, anode unit is in array distribution.
Fig. 6 is the dimensional structure diagram of multianode MicroChannel plate detector.Incidence is added on the basis of Fig. 5
Window 33, photocathode 34, microchannel plate 35 and glass gasket 36 constitute multianode MicroChannel plate detector.Wherein
Photocathode 34 is attached on entrance window 33, passes through glass gasket between microchannel plate 35 and photocathode 34 and anode unit 31
36 insulation.The operation principle of the device is：Incident light penetrates entrance window and interacts with photocathode, photoelectron is generated, by light
Signal is converted to electric signal, and photoelectron incident microchannel plate under electric field action amplifies electronic signal, the electric signal after outgoing
Reach anode unit.Since anode unit is turned on by electrode connecting line with the contact conductor on glass substrate, and contact conductor
Outer end be placed in the outside of component vacuum environment, therefore can carry out signal-obtaining by being connected with contact conductor external electrode,
The final detection realized to optical signal.One advantage of the device is to realize multianode device architecture, and device has height
Position resolution, and various sizes of anode construction can be made as requested, be a kind of there is high-space resolution ability
Vacuum Photoelectric Detectors part has wide practical use in fields such as high-energy physics, Medical Instruments.
The present invention also provides a kind of vacuum photoelectric device based on more than contact conductor unit, i.e. mixed type vacuum photoelectricity is visited
Survey device.
Fig. 7 is the anode unit electrode connection diagram of mixed type Vacuum Photoelectric Detectors.Unlike Fig. 5, the device
Part is using a semiconductor optoelectronic detecting element 41 instead of array multianode structure.Semiconductor optoelectronic detecting element is fixed on
Glass substrate center, and the electricity that each electrode 42 of semiconductor optoelectronic probe unit and glass substrate are passed through into lead key closing process
Pole connecting line 43 connects, and realizes the circulation of each electrode current.The wherein optional avalanche photodide of semiconductor probe element, charge
Coupled apparatus, CMOS active pixel sensor, silicon photomultiplier etc..
Fig. 8 is the dimensional structure diagram of mixed type Vacuum Photoelectric Detectors, and composition is added on the basis of Fig. 7
Entrance window 44 and photocathode 45.The operation principle of this device is：Incident light penetrates entrance window and interacts with photocathode
Photoelectron is generated, converts optical signal into electric signal, photoelectron bombarding semiconductor detecting element under high pressure effect, so as to half
Electron bombardment gain is generated inside conductor detecting element, electric signal is amplified, signal passes through electrode, the electricity of semiconductor probe element
The contact conductor outer end of component vacuum environmental externality is reached after electrode on pole connecting line and glass substrate, and then outside can be passed through
Circuit probe.The mixed type vacuum photoelectric device made of the method for the present invention can be by each electrode on semiconductor probe element
Signal is readily detected, simple and reliable process, low manufacture cost, the method phase being connected with using stem progress contact conductor
It is more compact-sized than also having the advantages that.This vacuum photoelectric device can carry out single photon image, and future is in lll night vision, day historical relic
There is potential application prospect in the fields such as reason.
Above only describes several preferred embodiments of the present invention, however, the present invention is not limited thereto, every common skills in this field
Art personnel are not in the case where departing from spirit herein, any improvement or deformation made, belong to the scope that the present invention is protected.
Claims (9)
1. a kind of contact conductor unit, it is characterised in that：Including glass substrate, glass shell and multiple electrodes lead；The glass
Glass shell is fused to the surface of glass substrate；The contact conductor is distributed on the face of weld of glass shell and glass substrate, electricity
Pole lead one end is located at the inside of glass shell, and the other end of contact conductor is located at the outside of glass shell；The contact conductor
It is the metallic film of the strip made on the glass substrate of semiconductor technology.
2. contact conductor unit according to claim 1, it is characterised in that：The metallic film for single metallic film or
The stacked structure of person's various metals film.
3. a kind of production method of contact conductor unit, it is characterised in that：Comprise the following steps：
1) glass substrate is prepared；
2) contact conductor is made：Contact conductor is made using semiconductor technology on the glass substrate；The contact conductor is single
The stacked structure of metallic film or various metals film；
3) welding glass shell：The installation position coating glass powder with low melting point of glass shell on the glass substrate, glass dust
Coating width is more than the thickness of glass shell and less than the length of contact conductor；Glass cement is formed after glass dust is heating and curing；
Glass shell is positioned on glass cement, contact conductor one end is made to be located on the inside of glass shell, the other end of contact conductor is located at
The outside of glass shell；Heating makes glass shell bond together with glass substrate by glass cement in vacuum drying oven；After cooling
It takes out, completes the making of contact conductor unit.
4. the production method of contact conductor unit according to claim 3, it is characterised in that：Step 4) is further included to making
Good contact conductor unit carries out vacuum leak hunting.
5. a kind of vacuum photoelectric device, including entrance window, cathode electrode unit and anode unit, it is characterised in that：Electrode is further included to draw
Line unit；
The contact conductor unit includes glass substrate, glass shell and multiple electrodes lead；The glass shell is fused to glass
The surface of glass substrate；The contact conductor is distributed on the face of weld of glass shell and glass substrate；Described contact conductor one end
Positioned at the inside of glass shell, it is connected by electrode connecting line with anode unit；The other end of the contact conductor is located at glass
The outside of shell；The contact conductor is the metallic film of the strip made on the glass substrate of semiconductor technology；
The entrance window is located at the top of glass shell, and the entrance window, glass shell and glass substrate surround closed jointly
Vacuum chamber, the anode unit and cathode electrode unit are respectively positioned in vacuum chamber；The anode unit is fixed on glass substrate, described
Cathode electrode unit is fixed on entrance window bottom.
6. vacuum photoelectric device according to claim 5, it is characterised in that：The anode unit is to adopt on the glass substrate
The anode array made of semiconductor technology；Microchannel plate is installed between the anode array and photocathode.
7. vacuum photoelectric device according to claim 5, it is characterised in that：The anode unit is affixed to glass substrate
On semiconductor optoelectronic detecting element.
8. a kind of production method of vacuum photoelectric device, it is characterised in that：Comprise the following steps：
1) glass substrate is prepared；
2) contact conductor is made：Contact conductor is made using semiconductor technology on the glass substrate；The contact conductor is single
The stacked structure of metallic film or various metals film；
3) anode array is made using semiconductor technology on the glass substrate；
4) welding glass shell：The installation position coating glass powder with low melting point of glass shell on the glass substrate, glass dust
Coating width is more than the thickness of glass shell and less than the length of contact conductor；Glass cement is formed after glass dust is heating and curing；
Glass shell is positioned on glass cement, contact conductor one end is made to be located on the inside of glass shell, the other end of contact conductor is located at
The outside of glass shell；Heating makes glass shell bond together with glass substrate by glass cement in vacuum drying oven, after cooling
It takes out；
5) anode array is connected with contact conductor by conducting using lead key closing process；
6) after microchannel plate being installed, then the entrance window and the upper end vacuum sealing of glass shell that photocathode will be attached with, it is formed
Multianode microchannel plate Vacuum Photoelectric Detectors.
9. a kind of production method of vacuum photoelectric device, it is characterised in that：Comprise the following steps：
1) glass substrate is prepared；
2) contact conductor is made：Contact conductor is made using semiconductor technology on the glass substrate；The contact conductor is single
The stacked structure of metallic film or various metals film；
3) semiconductor optoelectronic detecting element is fixed on glass substrate；
4) semiconductor optoelectronic detecting element is connected with contact conductor by conducting using lead key closing process；
5) welding glass shell：The installation position coating glass powder with low melting point of glass shell on the glass substrate, glass dust
Coating width is more than the thickness of glass shell and less than the length of contact conductor；Glass cement is formed after glass dust is heating and curing；
Glass shell is positioned on glass cement, contact conductor one end is made to be located on the inside of glass shell, the other end of contact conductor is located at
The outside of glass shell；Heating makes glass shell bond together with glass substrate by glass cement in vacuum drying oven, after cooling
It takes out；
6) entrance window and the upper end vacuum sealing of glass shell that will be attached with photocathode forms mixed type vacuum photodetection
Device.
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| CN106876229A (en) | 2017-06-20 |
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