CN106829851A - It is a kind of to improve the method that MEMS sacrifice layer etching is bonded - Google Patents
It is a kind of to improve the method that MEMS sacrifice layer etching is bonded Download PDFInfo
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- CN106829851A CN106829851A CN201611245912.0A CN201611245912A CN106829851A CN 106829851 A CN106829851 A CN 106829851A CN 201611245912 A CN201611245912 A CN 201611245912A CN 106829851 A CN106829851 A CN 106829851A
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00912—Treatments or methods for avoiding stiction of flexible or moving parts of MEMS
- B81C1/0092—For avoiding stiction during the manufacturing process of the device, e.g. during wet etching
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00912—Treatments or methods for avoiding stiction of flexible or moving parts of MEMS
- B81C1/0092—For avoiding stiction during the manufacturing process of the device, e.g. during wet etching
- B81C1/00928—Eliminating or avoiding remaining moisture after the wet etch release of the movable structure
Abstract
Improve the method that MEMS sacrifice layer etches adhesion the invention discloses a kind of.By etching precondition substrate layer upper surface and sacrifice layer upper surface, increase the roughness of basalis upper surface and topmost thin film lower surface, reduce the downward pulling force suffered by the topmost thin film of cavity structure or cantilever beam structure, the generation of phenomenon such as caved in so as to avoid the bonding of topmost thin film and substrate, topmost thin film rupture, with ensure MEMS structure it is complete effectively.
Description
Technical field
The invention belongs to semiconductor integrated circuit manufacturing process technology field, it is related to a kind of system of MEMS (MEMS)
Technique is made, more particularly to a kind of method for improving MEMS sacrifice layer etching bonding.
Background technology
MEMS (Micro-Electro-Mechanical System, MEMS), is collection microsensor, micro- execution
The micro- energy of device, micro mechanical structure, micro battery, signal transacting and control circuit, high-performance electronic integrated device, interface, communication etc.
Structure is with function in the microdevice or system of one.MEMS grows up on the basis of microelectronics, has merged photoetching, corruption
The technologies such as erosion, film, etching, non-silicon processing and precision optical machinery processing, with small intelligent art compatibility is good, cost is low all
Many advantages, are widely used in the numerous areas such as sensor, automobile, electronics, biology and medical treatment.
In the manufacturing process of mechanical performance of MEMS is realized, it usually needs form cavity structure or cantilever beam knot
Structure.Cavity structure or cantilever beam structure are formed by the way of sacrifice layer is corroded in the prior art, as shown in figure 1, mainly
Comprise the following steps:
Step S1：One base infrastructure is provided.The base infrastructure can be the Semiconductor substrate containing device, it is also possible to
It is the Semiconductor substrate without device.
Step S2：Sacrificial layer material is deposited on the base layer.Silica due to its easy etching property, etch rate is very fast,
One of main flow selection as sacrificial layer material the advantages of higher to silicon etching selection.
Step S3：Sacrificial patterned, forms and sacrifices layer pattern.It is cavity structure figure or cantilever beam knot to sacrifice layer pattern
Composition shape.
Step S4：Topmost thin film is grown on layer pattern is sacrificed.Generally, silicon materials are used as topmost thin film material.
Step S5：Patterning topmost thin film, forms sacrifice layer etching opening.
Step S6：By sacrifice layer etching opening etching sacrificial layer, cavity structure or cantilever beam structure are formed.Prior art
Middle use wet etching silicon dioxide sacrificial layer completes the making of structure.
In above-mentioned steps S6, wet etching chemical liquid is entered into sacrifice layer by sacrifice layer etching opening, due to
Isotropic characteristic of wet etching, liquid carries out horizontal proliferation while longitudinally etching, so as to sacrificial layer material be carved
Erosion is clean, retains topmost thin film, and then form cavity structure or cantilever beam structure.But, because wet etching is a kind of liquid
The etching process of phase, and topmost thin film material is smaller with substrate interlamellar spacing, in the last drying process of wet etching, with liquid
The reduction of the scale of construction, the effect of liquid body surface tension, topmost thin film can be subject to the power of downward past basalis drawing, so as to cause as
The adhesion phenomenon of cantilever beam structure 13 and the lower substrate layer 11 shown in Fig. 2 or the upper strata of cavity structure (being showed not in figure)
The layer adhesion of film and lower substrate and rupture the severe result caved in, so as to cause resulting devices structural damage.Therefore, having must
Improve manufacturing process, it is to avoid the adhesion between topmost thin film material and base layer material.
The content of the invention
It is an object of the invention to overcome drawbacks described above, it is proposed that the side that a kind of improvement MEMS sacrifice layer etching is bonded
Method, it is to avoid adhesion between topmost thin film material and base layer material.
To achieve the above object, technical scheme is as follows：
A kind of to improve the method that MEMS sacrifice layer etching is bonded, it is mainly included the following steps that：
Step S01：One base infrastructure is provided；
Step S02：The etching pretreatment basalis upper surface, forms coarse basalis upper surface；
Step S03：Sacrifice layer is deposited in the coarse substrate surface；
Step S04：Sacrificial patterned, forms and sacrifices layer pattern；
Step S05：The etching pretreatment upper surface for sacrificing layer pattern, forms coarse sacrifice layer pattern upper surface；
Step S06：Topmost thin film is grown in the coarse sacrifice layer pattern upper surface, there is topmost thin film coarse
Lower surface；
Step S07：Patterning topmost thin film, forms sacrifice layer etching opening；
Step S08：Sacrificial layer material is etched away by sacrifice layer etching opening.
Preferably, in the step S04, the sacrifice layer pattern is cavity structure figure or cantilever beam structure figure.
Preferably, in the step S02, using the first wet etching liquid etching pretreatment basalis upper surface.
Preferably, the first wet etching liquid is SC1 admixing medical solutions, and the SC1 admixing medical solutions are by NH4OH、H2O2With
H2O is constituted, NH4OH、H2O2And H2The volume ratio of O is 1:4:20~1:1:5, technological temperature is 30 DEG C~70 DEG C, and etch period is
30 minutes~90 minutes.
Preferably, in the step S05, the upper of layer pattern is sacrificed using the etching pretreatment of the second wet etching liquid is described
Surface.
Preferably, the second wet etching liquid is a DHF dilute liquid medicines, and a DHF dilute liquid medicines are by HF
And H2O is constituted, HF and H2The volume ratio of O is 1:50~1:200, technological temperature be 20 DEG C~25 DEG C, etch period be 30 minutes~
60 minutes；Or the second wet etching liquid is a BHF dilute liquid medicines, a BHF dilute liquid medicines are by HF, NH4F
And H2O is constituted, HF, NH4F and H2O volume ratios are 1:5:50~1:20:100, technological temperature is 20 DEG C~25 DEG C, and etch period is
30 minutes~60 minutes.
Preferably, in the step S01, the material of the basalis is silicon；In the step S03, the sacrifice layer
Material is silica；In the step S06, the material of the topmost thin film is silicon.
Preferably, a described BHF dilute liquid medicines are by HF, NH4F and H2O is constituted, HF, NH4F and H2O volume ratios are 1:
5:50~1:20：100, technological temperature is 20 DEG C~25 DEG C, and etch period is 30~60 minutes.
Preferably, in the step S08, sacrifice is etched away by sacrifice layer etching opening using the 3rd wet etching liquid
Layer material.
Preferably, the 3rd wet etching liquid is the 2nd DHF dilute liquid medicines, and the 2nd DHF dilute liquid medicines are by HF
And H2O is constituted, HF and H2O volume ratios are 1:1~1:50, technological temperature is 20 DEG C~25 DEG C, and etch period is 30 minutes~60 points
Clock；Or the 3rd wet etching liquid is the 2nd BHF dilute liquid medicines, the 2nd BHF dilute liquid medicines are by NH4F and HF groups
Into NH4F and HF volume ratios are 20:1~4:1, technological temperature is 20 DEG C~25 DEG C, and etch period is 30 minutes~60 minutes.
From above-mentioned technical proposal as can be seen that the present invention is by increasing substrate surface and topmost thin film material lower surface
Roughness, reduce the downward pulling force suffered by the topmost thin film of cavity structure or cantilever beam structure, it is to avoid dried
There is the adhesion of topmost thin film and basalis, topmost thin film rupture in journey or the severe result such as cave in.Therefore, the present invention can
To ensure the complete effective of MEMS structure, the yields of device is increased.
Brief description of the drawings
Fig. 1 is the process chart of MEMS sacrifice layer etching in existing process；
Fig. 2 is the structural representation that cantilever beam structure is bonded in existing process；
Fig. 3 is a kind of method flow diagram for improving MEMS sacrifice layer etching bonding of the invention；
Fig. 4-Figure 11 is to form cantilever beam structure according to the method etching sacrificial layer shown in Fig. 3 in one embodiment of the invention
Structural representation.
Figure 12-Figure 19 is to form cavity structure according to the method etching sacrificial layer shown in Fig. 3 in another embodiment of the present invention
Structural representation.
Specific embodiment
Below with reference to specific embodiment, the present invention is described in further detail.
It should be noted that in following specific embodiments, when embodiments of the present invention are described in detail, in order to clear
Ground represents structure of the invention in order to illustrate, spy, not according to general scale, and has carried out part to the structure in accompanying drawing
Amplifying, deform and simplify treatment, therefore, should avoid being understood in this, as limitation of the invention.
When liquid and solid contact, the surface tension interaction of liquid and solid causes the exposure level between them
Difference, that is, have wetting or nonwetting state.Solid-liquid contact angle is the foundation for judging wetability quality.When contact angle is equal to 0 degree
When, the liquid complete wetting surface of solids, liquid is sprawled in the surface of solids；When contact angle is less than 90 degree, it is believed that liquid can moisten
Wet solid；When contact angle is less than 180 degree more than 90 degree, it is believed that the nonwetting solid of liquid.When contact angle is equal to 180 degree,
Liquid is condensed into bead in the surface of solids, completely nonwetting.The size of solid-liquid contact angle and surface micro-structure and surface chemistries
Qualitative correlation, in the case where surface chemical property cannot change, can change solid-liquid contact angle by changing surface micro-structure,
So as to improve the wetability of solid liquid interface, the purpose of solid liquid interface interaction relationship is changed to reach.In MEMS sacrificial layer system
During work, in order to avoid topmost thin film and basalis because surface tension of liquid and caused by adhesion, the phenomenon such as cave in, the present invention is logical
Cross and gently etched basalis upper surface and sacrificial layer surface, make the thick of basalis upper surface and topmost thin film material lower surface
Rugosity increases, and to reduce in drying process, film is subject to the power that downward past basalis draws at the middle and upper levels, so as to finally avoid sacrificing
The generation of the adhesion phenomenon of layer etching process, to ensure the complete effective of MEMS structure.
Embodiment one
The present embodiment with reference to Fig. 3, and is combined with reference to Fig. 4~11 as a example by forming cantilever beam structure after sacrifice layer etching, right
Specific embodiment of the invention is described in further detail.As shown in figure 3, a kind of improvement MEMS sacrifice of the invention
The method that layer etching is bonded, mainly includes the following steps that：
Step S01：One base infrastructure is provided.
Refer to Fig. 4.Base infrastructure 21 can be the Semiconductor substrate containing device, or not contain device
Semiconductor substrate.Generally, the upper surface of base infrastructure is smooth, and smooth surface more easily causes liquid and do not moisten in the surface of solids
Wet, surface tension is larger.In the present embodiment, the material of basalis is silicon.It is of course also possible to be other suitable materials, this hair
It is bright that this is not constrained.
Step S02：The etching pretreatment basalis upper surface, forms coarse basalis upper surface.
In this step, in order to reduce solid-liquid interface interphase interaction, using the side of slight etching basalis 21 upper surface
Formula, increases the roughness of the upper surface of basalis 21, and etch amount is very small, only reaches the effect of roughening.Can be carved using dry method
The mode of erosion or wet etching performs this step.In the present embodiment, it is with SC1 admixing medical solutions using wet-etching technology
One wet etching liquid, technological temperature is 30~70 DEG C, and etch period is 30~90 minutes, the slight etching upper table of basalis 21
Face, etch amount is very small, only reaches effect of rough surface.The SC1 admixing medical solutions are by NH4OH, H2O2And H2O is constituted, NH4OH,
H2O2And H2The volume ratio of O is 1:4:20~1:1:5.The upper surface of basalis 21 after etching is changed into coarse from smooth, such as Fig. 5 institutes
Show.
Step S03：Sacrifice layer is deposited in the coarse substrate surface.
In this step, one layer of sacrifice layer 22, generally bag are deposited in the coarse upper surface of basalis 21 using prior art
Include aumospheric pressure cvd, low-pressure chemical vapor deposition, plasma-deposited etc..Silica is carved due to its easy etching property
Erosion speed is very fast, it is higher to silicon etching selection the advantages of one of the main flow selection as the material of sacrifice layer 22.In the present embodiment
In, sacrifice layer 22 is earth silicon material.As shown in fig. 6, sacrifice layer 22 is in contact down with the coarse upper surface of basalis 21
Surface, with the coarse upper surface identical roughness of basalis 22.The upper surface of sacrifice layer 22 is smooth.
Step S04：Sacrificial patterned, forms and sacrifices layer pattern.
In this step, in order to realize the mechanical performance of MEMS, remove unwanted part in sacrifice layer 22, formed
Cavity structure or cantilever beam structure.With dry plasma by the quarter of sacrifice layer 22 after the upper surface coating photoresist of sacrifice layer 22
An eating away part, sacrificial patterned 22 is formed and sacrifices layer pattern 27.In the present embodiment, it is cantilever beam to sacrifice layer pattern 27
Structure graph, only exposes positioned at the unilateral substrate of sacrifice layer, eventually forms the cantilever beam being made up of topmost thin film and basalis
Structure 29, as shown in Figure 7.It is coarse to sacrifice the lower surface of layer pattern 27, and upper surface is still smooth.It is of course also possible to adopt
The modes such as otherwise sacrificial patterned, hard mask.
Step S05：The etching pretreatment upper surface for sacrificing layer pattern, forms coarse sacrifice layer pattern upper surface.
Because topmost thin film is to be grown in sacrificing on layer pattern 27, so, increase and sacrifice the coarse of the upper surface of layer pattern 27
Spend equivalent to the roughness for increasing topmost thin film lower surface.This step can be performed by the way of dry etching or wet etching
Suddenly.As shown in figure 8, in the present embodiment, being carried out slightly to the upper surface for sacrificing layer pattern 27 using the second wet etching liquid
Etching, forms coarse sacrifice layer pattern upper surface.In wet liquid medicine corrosion process, because of graphical sacrifice in step S04
Layer and the coarse substrate surface that exposes can also be subject to partial etching, in order to avoid basalis is by overetch, Ke Yixuan
Select very fast to silica etching speed, select silicon etching liquid higher as the second etching liquid.Preferably, can be with
Using a DHF dilute liquid medicines as the second wet etching liquid, a DHF dilute liquid medicines are by HF and H2O is constituted, HF and H2O
Volume ratio be 1:50~1:200, technological temperature is 20 DEG C~25 DEG C, and etch period is 30~60 minutes.Or, it is also possible to adopt
With a BHF dilute liquid medicines as the second wet etching liquid, a BHF dilute liquid medicines are by HF, NH4F and H2O is constituted, HF,
NH4F and H2O volume ratios are 1:5:50~1:20：100, technological temperature is 20 DEG C~25 DEG C, and etch period is 30~60 minutes.
Step S06：Topmost thin film is grown in the coarse sacrifice layer pattern upper surface, there is topmost thin film coarse
Lower surface.
As shown in figure 9, be coarse due to sacrificing the upper surface of layer pattern 27, therefore, with sacrifice layer pattern upper surface
The lower surface of topmost thin film 23 be also coarse, and with identical roughness.The change of this surface micro-structure can make
In ensuing drying process, reduce solid-liquid interface interphase interaction.In the present embodiment, topmost thin film 23 is silicon material.It is raw
The mode of topmost thin film long uses prior art, and therefore not to repeat here.
Step S07：Patterning topmost thin film, forms sacrifice layer etching opening.
In this step, in order to form the opening of etching sacrificial layer, topmost thin film 23 is patterned.As shown in Figure 10, upper
Topmost thin film is etched away into a part with dry plasma after the coating photoresist of layer film upper surface, sacrifice layer is formed etched open
Mouth 28.In the present embodiment, due to being to form cantilever beam structure, so, sacrifice layer etching opening 28 is located at the end of cantilever beam.
In a subsequent step, the 3rd wet etching liquid is entered by sacrifice layer etching opening 28, is contacted with sacrifice layer, and to sacrificing
Layer is performed etching, and forms cavity structure or cantilever beam structure.It is of course also possible to use other manner patterning topmost thin film, all
Such as hard mask mode.
Step S08：All sacrificial layer materials are etched away by sacrifice layer etching opening.
In this step, according to the need for design, it is necessary to form cavity between basalis and topmost thin film or outstanding
Arm girder construction, to realize the mechanical performance of device.This step can be performed by the way of dry etching or wet etching.As schemed
Shown in 11, in the present embodiment, the 3rd wet etching liquid is entered by the sacrifice layer etching opening 28 that step S07 is formed, with
Sacrifice layer 22 is contacted, and sacrifice layer 22 is performed etching, due to isotropic characteristic of wet etching, the 3rd wet etching medicine
Liquid carries out horizontal proliferation while longitudinally etching, so as to the sacrificial layer material etching under topmost thin film is clean, so as to be formed
Cantilever beam structure 29.In wet liquid medicine corrosion process, the upper strata exposed because topmost thin film is etched away in step S07
The side wall 30 of film can also be subject to partial etching, in order to avoid topmost thin film silicon material is by overetch, can select to dioxy
SiClx etching speed is very fast, selects silicon etching liquid higher as the 3rd etching liquid.Preferably, second can be used
, used as the 3rd wet etching liquid, the 2nd DHF dilute liquid medicines are by HF and H for DHF liquids2O is constituted, HF and H2O volume ratios are 1:1~
1:50, technological temperature is 20 DEG C~25 DEG C, and etch period is 30~60 minutes.Or, it would however also be possible to employ the 2nd BHF liquid conducts
3rd wet etching liquid, the 2nd described BHF dilute liquid medicines are by NH4F and HF is constituted, NH4F and HF volume ratios are 20:1~4:
1, technological temperature is 20 DEG C~25 DEG C, and etch period is 30~60 minutes.
, it is necessary to be dried to etching liquid after the etching to sacrifice layer is completed.In drying process, with cavity knot
Structure or cantilever beam structure 29 (i.e. topmost thin film) etch the reduction of liquid quantity, liquid and basalis table and basalis 21 between
Active force between the lower surface of face and cantilever beam structure 29 can gradually increase, until the lower surface of liquid and cantilever beam structure 29
Between disengage.The lower surface of substrate surface and cantilever beam structure 29 is rough surface in the present embodiment, liquid with it is thick
Active force between rough surface is reduced suffered by cantilever beam structure 29 less than the active force between liquid and smooth surface
Downward pulling force.
Embodiment two
The present embodiment with reference to Fig. 3, and is combined with reference to Figure 12~19 as a example by forming cavity structure after sacrifice layer etching, right
Specific embodiment of the invention is described in further detail.As shown in figure 3, a kind of improvement MEMS sacrifice of the invention
The method that layer etching is bonded, mainly includes the following steps that：
Step S01：A base infrastructure 31 is provided, as shown in figure 12.
Step S02：The etching pretreatment upper surface of basalis 31, forms coarse basalis upper surface, such as Figure 13 institutes
Show.
Step S03：Sacrifice layer 32 is deposited in the coarse substrate surface, as shown in figure 14.
Method involved by above three step is identical with embodiment one with structure, and description is not repeated herein.
Step S04：Sacrificial patterned, forms and sacrifices layer pattern 37, as shown in figure 15.
In this step, in order to realize the mechanical performance of MEMS, remove unwanted part in sacrifice layer 32, formed
Cavity structure or cantilever beam structure.With dry plasma by the quarter of sacrifice layer 32 after the upper surface coating photoresist of sacrifice layer 32
An eating away part, sacrificial patterned 32 is formed and sacrifices layer pattern 37.In the present embodiment, it is cavity structure to sacrifice layer pattern
Figure 37, exposes the substrate positioned at sacrifice layer both sides, eventually forms the cavity structure 39 being made up of topmost thin film and basalis,
As shown in figure 15.It is coarse to sacrifice the lower surface of layer pattern 37, and upper surface is still smooth.It is of course also possible to use other
The modes such as mode sacrificial patterned, hard mask.
Step S05：The etching pretreatment upper surface for sacrificing layer pattern 37, forms coarse sacrifice layer pattern upper table
Face, as shown in figure 16.
Step S06：Topmost thin film 33 is grown in the coarse sacrifice layer pattern upper surface, there is topmost thin film 33 thick
Rough lower surface, as shown in figure 17.
Method involved by above-mentioned two step is identical with embodiment one with structure, and description is not repeated herein.
Step S07：Patterning topmost thin film, forms sacrifice layer etching opening 38, as shown in figure 18.
In this step, in order to form the opening of etching sacrificial layer, topmost thin film 33 is patterned.As shown in figure 18, upper
Topmost thin film is etched away into a part with dry plasma after the coating photoresist of layer film upper surface, sacrifice layer is formed etched open
Mouth 38.In the present embodiment, due to being to form cavity structure, so, sacrifice layer etching opening 38 is located at cavity structure figure 37
Upper surface.In a subsequent step, the 3rd wet etching liquid is entered by sacrifice layer etching opening 38, is connect with sacrifice layer
Touch, and sacrifice layer is performed etching, form cavity structure 39.It is of course also possible to use other manner patterning topmost thin film, all
Such as hard mask mode.
Step S08：Sacrificial layer material is etched away by sacrifice layer etching opening 38.
In this step, according to the need for design, it is necessary to form cavity between basalis and topmost thin film or outstanding
Arm girder construction, to realize the mechanical performance of device.This step can be performed by the way of dry etching or wet etching.As schemed
Shown in 19, in the present embodiment, the 3rd wet etching liquid is entered by the sacrifice layer etching opening 38 that step S07 is formed, with
Sacrifice layer 32 is contacted, and sacrifice layer 32 is performed etching, due to isotropic characteristic of wet etching, the 3rd wet etching medicine
Liquid carries out horizontal proliferation while longitudinally etching, so as to the sacrificial layer material etching under topmost thin film is clean, so as to be formed
Cavity structure 39.In wet liquid medicine corrosion process, the upper strata exposed because topmost thin film is etched away in step S07 is thin
The side wall of film can also be subject to partial etching, in order to avoid topmost thin film silicon material is by overetch, can select to silica
Etching speed is very fast, selects silicon etching liquid higher as the 3rd etching liquid.Preferably, the 2nd DHF can be used
, used as the 3rd wet etching liquid, the 2nd DHF dilute liquid medicines are by HF and H for liquid2O is constituted, HF and H2O volume ratios are 1:1~1:
50, technological temperature is 20 DEG C~25 DEG C, and etch period is 30~60 minutes.Or, it would however also be possible to employ the 2nd BHF liquids are used as
Three wet etching liquids, the 2nd described BHF dilute liquid medicines are by NH4F and HF is constituted, NH4F and HF volume ratios are 20:1~4:1,
Technological temperature is 20 DEG C~25 DEG C, and etch period is 30~60 minutes.
, it is necessary to be dried to etching liquid after the etching to sacrifice layer is completed.In drying process, with cavity knot
The reduction of etching liquid quantity in structure 39, active force between liquid and the lower surface of substrate surface and topmost thin film 33 can be by
It is cumulative to add, until being disengaged between the lower surface of liquid and topmost thin film 33.Substrate surface and upper strata are thin in the present embodiment
The lower surface of film 33 is rough surface, and the active force between liquid and rough surface is less than the work between liquid and smooth surface
Firmly, therefore the downward pulling force suffered by topmost thin film 33 is reduced.
In sum, the roughness by increasing substrate surface and topmost thin film material lower surface of the invention, reduces
Downward pulling force suffered by the cavity structure or cantilever beam structure of topmost thin film, avoids the generation upper strata in drying process thin
The severe results such as adhesion, topmost thin film rupture or the cantilever beam fracture of film and basalis.Therefore, present invention can assure that
MEMS structure it is complete effectively, increased the yields of device.
Above-described is only the preferred embodiments of the present invention, and the embodiment simultaneously is not used to limit patent guarantor of the invention
Shield scope, therefore every equivalent structure change made with specification of the invention and accompanying drawing content, similarly should be included in
In protection scope of the present invention.
Claims (9)
1. it is a kind of to improve the method that MEMS sacrifice layer etching is bonded, it is characterised in that to mainly include the following steps that：
Step S01：One base infrastructure is provided；
Step S02：The etching pretreatment basalis upper surface, forms coarse basalis upper surface；
Step S03：Sacrifice layer is deposited in the coarse substrate surface；
Step S04：Sacrificial patterned, forms and sacrifices layer pattern；
Step S05：The etching pretreatment upper surface for sacrificing layer pattern, forms coarse sacrifice layer pattern upper surface；
Step S06：Topmost thin film is grown in the coarse sacrifice layer pattern upper surface, makes topmost thin film that there is coarse following table
Face；
Step S07：Patterning topmost thin film, forms sacrifice layer etching opening；
Step S08：Sacrificial layer material is etched away by sacrifice layer etching opening.
It is 2. as claimed in claim 1 to improve the method that MEMS sacrifice layer etching is bonded, it is characterised in that：The step
In S04, the sacrifice layer pattern is cavity structure figure or cantilever beam structure figure.
It is 3. as claimed in claim 1 to improve the method that MEMS sacrifice layer etching is bonded, it is characterised in that：The step
In S02, using the first wet etching liquid etching pretreatment basalis upper surface.
It is 4. as claimed in claim 3 to improve the method that MEMS sacrifice layer etching is bonded, it is characterised in that：Described first is wet
Method etching liquid is SC1 admixing medical solutions, and the SC1 admixing medical solutions are by NH4OH、H2O2And H2O is constituted, NH4OH、H2O2And H2The body of O
Product is than being 1:4:20~1:1:5, technological temperature is 30 DEG C~70 DEG C, and etch period is 30 minutes~90 minutes.
It is 5. as claimed in claim 1 to improve the method that MEMS sacrifice layer etching is bonded, it is characterised in that：The step
In S05, using the second wet etching liquid etching pretreatment upper surface for sacrificing layer pattern.
It is 6. as claimed in claim 5 to improve the method that MEMS sacrifice layer etching is bonded, it is characterised in that：Described second is wet
Method etching liquid is a DHF dilute liquid medicines, and a DHF dilute liquid medicines are by HF and H2O is constituted, HF and H2The volume ratio of O is
1:50~1:200, technological temperature is 20 DEG C~25 DEG C, and etch period is 30 minutes~60 minutes；Or second wet method is carved
Erosion liquid is a BHF dilute liquid medicines, and a BHF dilute liquid medicines are by HF, NH4F and H2O is constituted, HF, NH4F and H2O volumes
Than being 1:5:50~1:20:100, technological temperature is 20 DEG C~25 DEG C, and etch period is 30 minutes~60 minutes.
It is 7. as claimed in claim 1 to improve the method that MEMS sacrifice layer etching is bonded, it is characterised in that：The step
In S01, the material of the basalis is silicon；In the step S03, the material of the sacrifice layer is silica；The step
In S06, the material of the topmost thin film is silicon.
It is 8. as claimed in claim 1 to improve the method that MEMS sacrifice layer etching is bonded, it is characterised in that：The step
In S08, sacrificial layer material is etched away by sacrifice layer etching opening using the 3rd wet etching liquid.
It is 9. as claimed in claim 8 to improve the method that MEMS sacrifice layer etching is bonded, it is characterised in that：Described 3rd is wet
Method etching liquid is the 2nd DHF dilute liquid medicines, and the 2nd DHF dilute liquid medicines are by HF and H2O is constituted, HF and H2O volume ratios are 1:
1~1:50, technological temperature is 20 DEG C~25 DEG C, and etch period is 30 minutes~60 minutes；Or the 3rd wet etching medicine
Liquid is the 2nd BHF dilute liquid medicines, and the 2nd BHF dilute liquid medicines are by NH4F and HF is constituted, NH4F and HF volume ratios are 20:1~4:
1, technological temperature is 20 DEG C~25 DEG C, and etch period is 30 minutes~60 minutes.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201611245912.0A CN106829851A (en) | 2016-12-29 | 2016-12-29 | It is a kind of to improve the method that MEMS sacrifice layer etching is bonded |
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| CN201611245912.0A CN106829851A (en) | 2016-12-29 | 2016-12-29 | It is a kind of to improve the method that MEMS sacrifice layer etching is bonded |
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| CN201611245912.0A Pending CN106829851A (en) | 2016-12-29 | 2016-12-29 | It is a kind of to improve the method that MEMS sacrifice layer etching is bonded |
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| CN112265955B (en) * | 2020-09-28 | 2024-05-17 | 江苏昊微纳科技服务有限公司 | Selective electrochemical etching method for cantilever beam type SOI-MEMS device |
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