CN106788316B - Pressure resistance type Oven Controlled Oscillator and preparation method thereof - Google Patents
Pressure resistance type Oven Controlled Oscillator and preparation method thereof Download PDFInfo
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- CN106788316B CN106788316B CN201510830774.1A CN201510830774A CN106788316B CN 106788316 B CN106788316 B CN 106788316B CN 201510830774 A CN201510830774 A CN 201510830774A CN 106788316 B CN106788316 B CN 106788316B
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/08—Holders with means for regulating temperature
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/19—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator consisting of quartz
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H2003/027—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks being of the microelectro-mechanical [MEMS] type
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
- H03H2003/0407—Temperature coefficient
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Abstract
The present invention provides a kind of pressure resistance type Oven Controlled Oscillator and preparation method thereof, comprising: resonance structure, heating beam, polysilicon high-ohmic layer, the first insulating layer and adding thermal resistance；Resonance structure includes extensional vibration beam and first electrode；The quantity of extensional vibration beam is two, two extensional vibration Liangping row interval arrangements；First electrode is located at the both ends of two extensional vibration beams, and two extensional vibration beams are connected；Extensional vibration beam and first electrode are along monocrystalline silicon<100>crystal orientation race directional spreding；It heats beam and runs through two extensional vibration beams；Polysilicon high-ohmic layer is located between two extensional vibration beams, and heating beam is separated for two parts；First insulating layer and adding thermal resistance are successively covered in the upper surface of heating beam from the bottom to top.Polysilicon high-ohmic layer is made between two extensional vibration beams, it can be achieved that carrying out piezoresistive detection to oscillator；The heating beam for being located at its two sides is connected into two-end fixed beam by polysilicon high-ohmic layer, is significantly reduced influence of the heating beam deformation to resonance structure.
Description
Technical field
The present invention relates to sensor fields, more particularly to a kind of pressure resistance type Oven Controlled Oscillator and preparation method thereof.
Background technique
Oscillator is to provide the basic electronic component of clock frequency, be both needed in nearly all digital circuitry using.
In modern communication systems, oscillator provides frequency reference and synchronization signal for system.Since frequency resource is limited and user is many
It is more, there is high requirement to the stability of oscillator.GSM mobile handset require oscillator full warm area frequency stability ± 2.5ppm with
It is interior, and mobile base station requires the stability of oscillator within ± 0.05ppm.
For a long time, quartz-crystal resonator is always that the main element of clock frequency signal is provided in electronic system,
Performance is stablized, good temp characteristic.But quartz (controlled) oscillator is difficult to integrate, and is limited by mechanical processing tools and is difficult to make high frequency vibrating
Device is swung, and anti-seismic performance is poor, it is difficult to meet the needs of following intelligent movable equipment.
The silicon substrate oscillator made of micro-electromechanical technology (MEMS) technology is humorous convenient for integrated with integrated circuit, and vibration characteristic is excellent
It is different, it can be achieved that the frequency of oscillation of GHz magnitude exports, and tolerable HI high impact environment is oscillator of new generation.
One main problem of silicon substrate oscillator is that the temperature coefficient of monocrystalline silicon young modulus is up to -56ppm/ DEG C, draws
The frequency-temperature coefficient risen is up to -30ppm/ DEG C.As a comparison, uncompensated AC-cut quartz resonance structure is at -40~85 DEG C
Frequency-temperature coefficient is in 26ppm or so in range.It is more than the full warm area frequency-temperature coefficient of silicon two orders of magnitude bigger than quartz.It is high
The difficulty of temperature-compensating has been significantly greatly increased up to -30ppm/ DEG C of frequency-temperature coefficients.
It is expected to realize the MEMS oscillator of high-temperature stability using thermostatic control technology.Utilize MEMS resonant structure thermal capacitance
Measure low feature, it is only necessary to the power consumption of mW magnitude can by resonance structure constant temperature at 90 DEG C, it can be achieved that the temperature-compensating of low-power consumption.
But since silicon frequency-temperature coefficient is up to -30ppm/ DEG C, in order to realize the temperature stability (3E grades of clocks) of 1ppm, it is necessary to protect
Full warm area interior resonance structure steady temperature fluctuation is demonstrate,proved less than 0.033 DEG C, realizes that difficulty is higher.
Experiment shows the frequency-temperature coefficient of N-type heavy doping structure along<100>crystal orientation, and there are zero crossing, frequency temperatures
The temperature of coefficient zero crossing is determined by doping concentration.Our experiment also indicates that, by adjusting n-type doping concentration, can make <
100 > crystal orientation temperature coefficient of resonance frequency zero crossing is slightly above the upper limit of oscillator operation warm area.
High performance Oven Controlled Oscillator is difficult to the common problem for using piezoresistive detection to be such oscillator structure, reason
Be that there are contradictions for the requirement of high-performance thermostatic control and piezoresistive detection to structure: one side high-performance Oven Controlled Oscillator is wanted
The temperature uniformity of core resonance structure is sought, adding thermal resistance must be another using the single-beam form through core resonance structure
Aspect piezoresistive detection requires electric current big region of stress from core resonance structure to flow through.Insulation and shock proof need in order to balance
It asks, the size of core resonance structure and heating beam is small, it is difficult to while meeting the needs of high-performance thermostatic control and piezoresistive detection.
Summary of the invention
In view of the foregoing deficiencies of prior art, the purpose of the present invention is to provide a kind of pressure resistance type thermostatic control oscillations
Device and preparation method thereof, for solving in the prior art since silicon substrate oscillator has up to -30ppm/ DEG C of frequency temperature system
The relatively difficult problem of the temperature-compensating of frequency and high performance Oven Controlled Oscillator are difficult to using pressure drag caused by number
The problem of detection.
In order to achieve the above objects and other related objects, the present invention provides a kind of pressure resistance type Oven Controlled Oscillator, described
Pressure resistance type Oven Controlled Oscillator includes: resonance structure, heating beam, polysilicon high-ohmic layer, the first insulating layer and adding thermal resistance；
The resonance structure includes extensional vibration beam and first electrode；The quantity of the extensional vibration beam is two, described
Two extensional vibration Liangping row interval arrangements；The first electrode is located at the both ends of two extensional vibration beams, and will be described
Two extensional vibration beams are connected；The extensional vibration beam and the first electrode are along monocrystalline silicon<100>crystal orientation race direction point
Cloth；
The heating beam runs through two extensional vibration beams；
The polysilicon high-ohmic layer is two between two extensional vibration beams, and by heating beam partition
Point；
First insulating layer and the adding thermal resistance are successively covered in the upper surface of the heating beam from the bottom to top.
As a kind of preferred embodiment of pressure resistance type Oven Controlled Oscillator of the invention, it is described heating beam midpoint with it is described
The midpoint of resonance structure coincides.
As a kind of preferred embodiment of pressure resistance type Oven Controlled Oscillator of the invention, the pressure resistance type thermostatic control oscillation
Device further includes anchor point, temperature sensor and second electrode；
The anchor point is located at the two sides of the resonance structure, and the both ends of the heating beam are connected with the anchor point respectively
It connects, the both ends of first insulating layer and the adding thermal resistance are respectively positioned on the upper surface of the anchor point；
The temperature sensor is located at the upper surface of the anchor point；
The second electrode is located at the surface at the adding thermal resistance both ends.
As a kind of preferred embodiment of pressure resistance type Oven Controlled Oscillator of the invention, the resonance structure, the heating
The material of beam and the anchor point is N-type heavy doping monocrystalline silicon, and the resonance structure, the heating beam and the anchor point are one
Body structure；The material of the polysilicon high-ohmic layer is undoped low stress polysilicon.
As a kind of preferred embodiment of pressure resistance type Oven Controlled Oscillator of the invention, N in the N-type heavy doping monocrystalline silicon
The concentration of type heavy doping is greater than 1019/cm3。
As a kind of preferred embodiment of pressure resistance type Oven Controlled Oscillator of the invention, the pressure resistance type thermostatic control oscillation
Device further includes third electrode, and the third electrode is located at the upper surface of the anchor point, and the resonance structure passes through the third electricity
Realize that electricity is drawn in pole.
As a kind of preferred embodiment of pressure resistance type Oven Controlled Oscillator of the invention, the temperature sensor includes temperature
Sensitive resistance, the 4th electrode and second insulating layer；The temperature-sensitive resistor is solid by the second insulating layer and the anchor point
Even, and by the 4th electrode realize that electricity is drawn.
As a kind of preferred embodiment of pressure resistance type Oven Controlled Oscillator of the invention, the temperature sensor includes temperature sensitive
Diode.
As a kind of preferred embodiment of pressure resistance type Oven Controlled Oscillator of the invention, the pressure resistance type thermostatic control oscillation
Device further includes substrate and third insulating layer, and the third insulating layer is located at the lower surface of the anchor point, and the anchor point passes through described
Third insulating layer is fixed on the surface of the substrate；Under the surface of the substrate and the resonance structure and the heating beam
Surface has certain spacing.
As a kind of preferred embodiment of pressure resistance type Oven Controlled Oscillator of the invention, the pressure resistance type thermostatic control oscillation
Device is packaged in vacuum environment.
The present invention also provides a kind of preparation method of pressure resistance type Oven Controlled Oscillator, the preparation method includes:
1) soi wafer is provided, the soi wafer successively includes silicon substrate, buried oxide layer and top layer silicon from the bottom to top；
2) the first dielectric isolation layer is formed in the top layer silicon face；
3) first dielectric isolation layer and the top layer silicon are etched, is formed through first dielectric isolation layer and described
The deep trouth of top layer silicon；
4) it is dielectrically separated from layer surface and the deep trouth described first and forms low stress polysilicon layer, the low stress is more
Crystal silicon layer covering described first is dielectrically separated from layer surface and fills up the deep trouth；
5) the low stress polysilicon layer and first dielectric isolation layer of the deep trouth periphery are successively removed；
6) the second dielectric isolation layer and resistive layer are sequentially formed in the top layer silicon face, defines adding thermal resistance figure and temperature
Sensor pattern is spent, etching removes second insulation outside the adding thermal resistance figure and the temperature sensor graphics field
Separation layer and the resistive layer with formation temperature sensitive resistance, adding thermal resistance, are located at the temperature-sensitive resistor and the heating
Insulating layer below resistance；
7) at the both ends of the temperature-sensitive resistor, the both ends and the subsequent top that form anchor point of the adding thermal resistance
Layer silicon face forms metal electrode；
8) photoetching, top layer silicon described in deep reaction ion etching form anchor point, heating beam and resonance structure, the resonance knot
Structure include two extensional vibration beams and be located at extensional vibration beam both ends and with the extensional vibration beam connected vertically first
Electrode；
9) buried oxide layer except the anchor point corresponding region is removed.
A kind of preferred embodiment of preparation method as pressure resistance type Oven Controlled Oscillator of the invention, in step 4), institute
The width for stating deep trouth is less than or equal to twice of the low stress polysilicon layer thicknesses；The length of the deep trouth is greater than in step 8)
The sum of the width of the heating beam formed and twice of lithography alignment deviation.
As described above, pressure resistance type Oven Controlled Oscillator and preparation method thereof of the invention, has the advantages that edge
<100>frequency-temperature coefficient of the N-type heavy doping structure of crystal orientation race is there are zero crossing, the temperature of frequency-temperature coefficient zero crossing by
Doping concentration determines；By adjusting n-type doping concentration,<100>crystal orientation race temperature coefficient of resonance frequency zero crossing can be made slightly higher
In the upper limit of oscillator operation warm area；Heating beam through resonance structure is set, and galvanization can be realized on the heating beam
Thermostatic control, so that the pressure resistance type Oven Controlled Oscillator has preferable stability and preferable temperature characterisitic；Institute
It states and makes the polysilicon high-ohmic layer between two extensional vibration beams, may be implemented to carry out piezoresistive detection to the oscillator；Together
When, the heating beam for being located at its two sides is connected into complete symmetrical two-end fixed beam by the polysilicon high-ohmic layer, can be to institute
It states resonance structure and good support is provided, be significantly reduced influence of the heating beam deformation to the resonance structure.
Detailed description of the invention
Fig. 1 is shown as the schematic perspective view of the pressure resistance type Oven Controlled Oscillator provided in the embodiment of the present invention one.
Fig. 2 is shown as the decomposition texture schematic diagram of the pressure resistance type Oven Controlled Oscillator provided in the embodiment of the present invention one.
Fig. 3 is shown as the electricity when pressure resistance type Oven Controlled Oscillator provided in the embodiment of the present invention one carries out piezoresistive detection
Stream flows to schematic diagram.
Fig. 4 shows the equivalent circuit diagram of Fig. 3.
The process that Fig. 5 is shown as the preparation method of the pressure resistance type Oven Controlled Oscillator provided in the embodiment of the present invention two is shown
It is intended to.
Fig. 6 to Figure 15 is the preparation method of the pressure resistance type Oven Controlled Oscillator provided in the embodiment of the present invention two in each step
Structural schematic diagram in rapid.
Component label instructions
10 resonance structures
101 extensional vibration beams
102 first electrodes
111 heating beams
112 first insulating layers
113 adding thermal resistances
114 polysilicon high-ohmic layers
12 anchor points
13 temperature sensors
131 temperature-sensitive resistors
132 the 4th electrodes
133 third insulating layers
14 second electrodes
15 third electrodes
16 substrates
17 second insulating layers
20 soi wafers
201 silicon substrates
202 buried oxide layers
203 top layer silicons
21 first dielectric isolation layers
22 deep trouths
23 low stress polysilicon layers
S1~S9 step
Specific embodiment
Illustrate embodiments of the present invention below by way of specific specific example, those skilled in the art can be by this specification
Other advantages and efficacy of the present invention can be easily understood for disclosed content.The present invention can also pass through in addition different specific realities
The mode of applying is embodied or practiced, the various details in this specification can also based on different viewpoints and application, without departing from
Various modifications or alterations are carried out under spirit of the invention.
Fig. 1 to Figure 15 is please referred to it should be noted that diagram provided in the present embodiment only illustrates this in a schematic way
The basic conception of invention, though only show in diagram with related component in the present invention rather than package count when according to actual implementation
Mesh, shape and size are drawn, when actual implementation kenel, quantity and the ratio of each component can arbitrarily change for one kind, and its
Assembly layout kenel may also be increasingly complex.
Embodiment one
Fig. 1 to Fig. 2 is please referred to, the present invention provides a kind of pressure resistance type Oven Controlled Oscillator, the pressure resistance type thermostatic control
Oscillator includes: resonance structure 10, heating beam 111, polysilicon high-ohmic layer 114, the first insulating layer 112 and adding thermal resistance 113；Institute
Stating resonance structure 10 includes extensional vibration beam 101 and first electrode 102；The quantity of the extensional vibration beam 101 is two, described
Two 101 parallel interval of extensional vibration beam arrangements；The first electrode 102 is located at the both ends of two extensional vibration beams 101,
And two extensional vibration beams 101 are connected；The extensional vibration beam 101 and the first electrode 102 along monocrystalline silicon <
100 > crystal orientation race directional spreding；The heating beam 111 runs through two extensional vibration beams 101；The polysilicon high-ohmic layer 114
Separate between two extensional vibration beams 101, and by the heating beam 111 for two parts；First insulating layer 112
And the adding thermal resistance 113 is successively covered in the upper surface of the heating beam 111 from the bottom to top.
As an example, the extensional vibration beam 101 and the first electrode 102 are along monocrystalline silicon<100>crystal orientation race direction
Be distributed concretely: the resonance structure 10 can use (100) silicon wafer to manufacture, and the extensional vibration beam 101 can be along (001)
[100] crystal orientation on crystal face, and the first electrode 102 can along (100) crystal face [010] crystal orientation.Along the N of<100>crystal orientation race
There are zero crossing, the temperature of frequency-temperature coefficient zero crossing to be determined by doping concentration for the frequency-temperature coefficient of type heavy doping structure；
By adjusting n-type doping concentration,<100>crystal orientation temperature coefficient of resonance frequency zero crossing can be made to be slightly above oscillator operation warm area
The upper limit.
As an example, the polysilicon high-ohmic layer 114 adds between two extensional vibration beams 101, and by described
The hot partition of beam 111 is two parts specifically: the polysilicon high-ohmic layer 114 is between two extensional vibration beams 101
In the heating beam 111, and the thickness of the polysilicon high-ohmic layer 114 is equal to the thickness of the heating beam 111, the polysilicon
The length of resistive formation 114 is equal to the width of the heating beam 111, with ensure the polysilicon high-ohmic layer 114 can will be located at its two
The heating beam 111 of side is completely isolated.The polysilicon high-ohmic layer 114 can be located at two extensional vibration beams 101 it
Between the heating beam 111 any position, it is preferable that in the present embodiment, the polysilicon high-ohmic layer 114 be located at it is described plus
The midpoint of hot beam 111, i.e., the midpoint of the described polysilicon high-ohmic layer 114 and the midpoint of the heating beam 111 coincide.
As an example, the midpoint of the heating beam 111 and the midpoint of the resonance structure 10 coincide, i.e., the described heating beam
111 be the midpoint of the extensional vibration beam 101 with the tie point of the extensional vibration beam 101, using Fig. 1 to Fig. 2 as example, at this time
The center of the heating beam 111 is located at the center between the midpoint of two extensional vibration beams 101.The heating beam 111
It is located at the smallest point of longitudinal stretching modal displacement of the extensional vibration beam 101 with the tie point of the extensional vibration beam 101, i.e.,
Positioned at the midpoint of the extensional vibration beam 101, so that therefore the heating beam 111 is to the resonance structure 10 work vibration shape
It influences minimum.
As an example, the pressure resistance type Oven Controlled Oscillator further includes anchor point 12, temperature sensor and 13 second electrodes
14；The anchor point 12 is located at the two sides of the resonance structure 10, and the both ends of the heating beam 111 respectively with 12 phase of anchor point
The both ends of connection, first insulating layer 112 and the adding thermal resistance 113 are respectively positioned on the upper surface of the anchor point 12；The temperature
Degree sensor 13 is located at the upper surface of the anchor point 12；The second electrode 14 is located at the surface at 113 both ends of adding thermal resistance.
Apply voltage in the second electrode 14, the heating beam 111 and the resonance structure 10 can be heated.The adding thermal resistance
113 thermostatic control for the heating beam 111, heated at constant temperature power P and two extensional vibration beams, 101 neutral temperature
Tt, anchor point temperature TaBetween meet formula:
P=β (Tt-Ta)
In formula, β is the function for heating beam size and thermal conductivity；β when heating beam is homogeneous rectangular cross section beam, in above formula
Meet formula:
β=8kbh/L
In formula, k is the thermal conductivity of the heating beam 111, b, h and L be respectively the heating width of beam 111, thickness and
Length.In practical structures, β is determined by actual experiment.
As an example, the material of the resonance structure 10, the heating beam 111 and the anchor point 12 is N-type heavy doping
Monocrystalline silicon, and the resonance structure 10, the heating beam 111 and the anchor point 12 are integrated, i.e., the described resonance structure
10, the heating beam 111 and the anchor point 12 can be obtained by etching same single crystal silicon material layer；The polysilicon high-ohmic
The material of layer 114 is undoped low stress polysilicon.
As an example, the concentration of N-type heavy doping can in the resonance structure 10, the heating beam 111 and the anchor point 12
To be set according to actual needs, it is preferable that in the present embodiment, the resonance structure 10, the heating beam 111 and the anchor
The concentration of N-type heavy doping should be greater than 10 in point 1219/cm3。
As an example, the pressure resistance type Oven Controlled Oscillator further includes third electrode 15, the number of the third electrode 15
Amount is two, is located in two anchor points 12 of 10 two sides of resonance structure, and the resonance structure 10 passes through described
Third electrode 15 realizes that electricity is drawn.It should be noted that the structure of the third electrode 15 is not limited in Fig. 1 and Fig. 2 institute
Show, can be set according to practical structures, for example, for capacitance detecting formula oscillator, described two third electrodes 15
It can be shorted and be used as an electrode.
As an example, the temperature sensor 13 includes temperature-sensitive resistor 131, the 4th electrode 132 and third insulating layer
133；The temperature-sensitive resistor 131 is connected by the third insulating layer 133 with the anchor point 12, and passes through the 4th electricity
Realize that electricity is drawn in pole 132；The temperature sensor 13 forms resistance bridge by external three resistance (not shown)
Realize the measurement to 12 temperature of anchor point.
As an example, the quantity of the 4th electrode 132 can be set according to actual needs, it is preferable that this implementation
In example, the quantity of the 4th electrode 132 is two, and described two 4th electrodes 132 are located at the temperature-sensitive resistor 131
On；Specifically, described two 4th electrodes 132 are located at the both ends of the temperature-sensitive resistor 132.
As an example, the temperature sensor 13 is not limited only to structure shown in FIG. 1, the temperature sensor 13 can also be adopted
With various ways such as temp.-sensitive diodes.
As an example, the pressure resistance type Oven Controlled Oscillator further includes substrate 16 and second insulating layer 17, the anchor point
12 are fixed on the surface of the substrate 16 by the second insulating layer 17；The surface of the substrate 16 and the resonance structure
10 and the lower surface of the heating beam 111 there is certain spacing, i.e., the described heating beam 111 supports the resonance structure 10
Come, and the resonance structure 10 is made to be in vacant state relative to the substrate 16.
As an example, the pressure resistance type Oven Controlled Oscillator is packaged in vacuum environment.
Current flow diagram when pressure resistance type Oven Controlled Oscillator carries out piezoresistive detection is as shown in figure 3, arrow in figure
Direction be electric current flow direction；From the figure 3, it may be seen that electric current is by the third after applying power on the third electrode 15
Electrode 15 flows through the heating beam 111, and 3 tunnels are divided into when reaching the extensional vibration beam 101, wherein 2 road electric currents flow separately through institute
The heating beam 111 is returned to after stating the resonance structure 10 of heating 111 two sides of beam, which is used for piezoresistive detection, separately
Electric current flows through the polysilicon high-ohmic layer 114 all the way, which is parasite current.The equivalent circuit diagram of Fig. 3 is as indicated at 4, wherein
Rs1And Rs2Respectively it is located at the resistance of the resonance structure 10 of heating 111 two sides of beam, when the partial ohmic is to resonance
Stress variation is sensitive；R in figureTIt is the dead resistance of piezoresistive detection for the resistance of the polysilicon high-ohmic layer 114；R in figurep1With
Rp2For the dead resistance of the anchor point 12 and the heating beam 111.As previously described, because the resonance structure 10, the heating
Beam 111 and the anchor point 12 are all made of the production of N-type heavy doping monocrystalline silicon, and circuit rate is less than 0.001 Ω cm, and the polycrystalline
Silicon resistive formation 114 is made of undoped low stress polysilicon, and resistance is greater than 10 Ω cm, due to the polysilicon high-ohmic
The resistivity of layer 114 is 10,000 times or more of resistivity of the resonance structure 10, it is assumed that beam in the resonance structure 10
Width and thickness is identical as the width and thickness of the polysilicon high-ohmic layer 114, even if the total length of the resonance structure 10 is
1,000 times of 114 length of polysilicon high-ohmic layer, RTIt is still Rs1And Rs2Ten times or more, influence to piezoresistive detection is negligible
Disregard.
In the present invention, there are zero crossing, frequency temperatures for the frequency-temperature coefficient of the N-type heavy doping structure of<100>crystal orientation race
The temperature of coefficient zero crossing is determined by doping concentration；By adjusting n-type doping concentration,<100>crystal orientation race resonance frequency can be made
Temperature coefficient zero crossing is slightly above the upper limit of oscillator operation warm area；Heating beam through resonance structure is set, in the heating
Thermostatic control can be realized in galvanization on beam so that the pressure resistance type Oven Controlled Oscillator have preferable stability and
Preferable temperature characterisitic；The polysilicon high-ohmic layer is made between two extensional vibration beams, may be implemented to the oscillation
Device carries out piezoresistive detection；Meanwhile the polysilicon high-ohmic layer connects into the heating beam for being located at its two sides completely symmetrically
Two-end fixed beam can provide good support to the resonance structure, be significantly reduced the heating beam deformation to the resonance
The influence of structure.
Embodiment two
Referring to Fig. 5, the present invention also provides a kind of preparation method of pressure resistance type Oven Controlled Oscillator, the preparation method
Include:
1) soi wafer is provided, the soi wafer successively includes silicon substrate, buried oxide layer and top layer silicon from the bottom to top；
2) the first dielectric isolation layer is formed in the top layer silicon face；
3) first dielectric isolation layer and the top layer silicon are etched, is formed through first dielectric isolation layer and described
The deep trouth of top layer silicon；
4) it is dielectrically separated from layer surface and the deep trouth described first and forms low stress polysilicon layer, the low stress is more
Crystal silicon layer covering described first is dielectrically separated from layer surface and fills up the deep trouth；
5) the low stress polysilicon layer and first dielectric isolation layer of the deep trouth periphery are successively removed；
6) the second dielectric isolation layer and resistive layer are sequentially formed in the top layer silicon face, defines adding thermal resistance figure and temperature
Sensor pattern is spent, etching removes second insulation outside the adding thermal resistance figure and the temperature sensor graphics field
Separation layer and the resistive layer with formation temperature sensitive resistance, adding thermal resistance, are located at the temperature-sensitive resistor and the heating
Insulating layer below resistance；
7) at the both ends of the temperature-sensitive resistor, the both ends and the subsequent top that form anchor point of the adding thermal resistance
Layer silicon face forms metal electrode；
8) photoetching, top layer silicon described in deep reaction ion etching form anchor point, heating beam and resonance structure, the resonance knot
Structure include two extensional vibration beams and be located at extensional vibration beam both ends and with the extensional vibration beam connected vertically first
Electrode；
9) buried oxide layer except the anchor point corresponding region is removed.
In step 1), please refer to S1 step and Fig. 6 in Fig. 5, soi wafer 20 be provided, the soi wafer 20 by down toward
On successively include silicon substrate 201, buried oxide layer 202 and top layer silicon 203.
As an example, the soi wafer 20 does not have particular/special requirement, it can be the routine used described in existing semiconductor field
Soi wafer.
In step 2), please refer to S2 step and Fig. 7 in Fig. 5,203 surface of top layer silicon formed first insulation every
Absciss layer 21.
As an example, thermally grown technique, low-pressure chemical vapor deposition process (LPCVD), physical vapour deposition (PVD) can be used
Technique etc. forms first dielectric isolation layer 21, the material of first dielectric isolation layer 21 on 203 surface of top layer silicon
It can be silica or low stress SiNx.
In step 3), S3 step and Fig. 8 in Fig. 5 are please referred to, etches first dielectric isolation layer 21 and the top
Layer silicon 203 forms the deep trouth 22 through first dielectric isolation layer 21 and the top layer silicon 203.
As an example, define the figure of the deep trouth 22 using photoetching process, method particularly includes: first insulation every
21 surface of absciss layer coats photoresist layer, forms the figure of the deep trouth 22 in the photoresist layer by the techniques such as expose, develop
Shape.
As an example, being removed and being corresponded to using etching process according to the photoresist layer for being formed with 22 figure of deep trouth
First dielectric isolation layer 21 in 22 region of deep trouth, cuts through the top layer silicon using deep reaction ion etching technique
203, to form the deep trouth 22.
As an example, being formed after the deep trouth 22, the photoresist layer is removed.
As an example, the width of the deep trouth 22 be less than or equal to subsequent step 4) in formed the low stress polysilicon
Twice of thickness degree；The length of the deep trouth 22 be greater than subsequent step 8) in formed the heating beam width and twice of light
Carve the sum of deviation of the alignment.
In step 4), S4 step and Fig. 9 in Fig. 5 are please referred to, on 21 surface of the first dielectric isolation layer and described
Low stress polysilicon layer 23 is formed in deep trouth 22, the low stress polysilicon layer 23 covers 21 surface of the first dielectric isolation layer
And fill up the deep trouth 22.
As an example, can use but be not limited only to Low Pressure Chemical Vapor Deposition in 21 table of the first dielectric isolation layer
Low stress polysilicon layer 23 is formed in face and the deep trouth 22, the low stress polysilicon layer 23 is undoped low stress polycrystalline
Silicon layer.
In step 5), the S5 step and Figure 10 to Figure 11 in Fig. 5 are please referred to, successively removes the low of 22 periphery of deep trouth
Stress polysilicon layer 23 and first dielectric isolation layer 21.
As an example, removing first dielectric isolation layer using reactive ion etching process or CMP process
The low stress polysilicon layer 23 on 21 surfaces removes first dielectric isolation layer 21 using etching process.
The low stress polysilicon layer 23 and first dielectric isolation layer 21 for removing 22 periphery of deep trouth are later i.e. in institute
It states and forms the polysilicon high-ohmic layer 114 as described in embodiment one in deep trouth 22.Figure 11 is the top view of Figure 10, due to described more
The size of crystal silicon resistive formation 114 is determined by the size of the deep trouth 22 formed before, the polysilicon high-ohmic layer 114
Width W is less than or equal to twice of 23 thickness of low stress polysilicon layer formed in step 4), to ensure the low stress
Polysilicon 23 fills up the deep trouth 22；The length L of the polysilicon high-ohmic layer 114 be greater than subsequent step 8) in formed it is described plus
The sum of the width of hot beam and twice of lithography alignment deviation.In MEMS, the thickness of the low stress polysilicon layer 23 is generally small
In or be equal to 2 μm, therefore, the width of the polysilicon high-ohmic layer 114 is generally less than 4 μm；In one example, the photoetching process
Deviation of the alignment be 2 μm, heat beam width be 4 μm, then the length L of the polysilicon high-ohmic layer 114 be greater than 8 μm.
In step 6), S6 step and Figure 12 in Fig. 5 are please referred to, sequentially forms second on 203 surface of top layer silicon
Dielectric isolation layer (not shown) and resistive layer (not shown) define adding thermal resistance figure and temperature sensor figure, etching removal
Second dielectric isolation layer and the resistive layer outside the adding thermal resistance figure and the temperature sensor graphics field, with
Formation temperature sensitive resistance (not shown), is located under the temperature-sensitive resistor and the adding thermal resistance 113 adding thermal resistance 113
The insulating layer of side.
As an example, forming second insulation on 203 surface of top layer silicon using low-pressure chemical vapour deposition technique
The material of separation layer and the resistive layer, second dielectric isolation layer can be but be not limited only to low stress SiNx, described
The material of resistive layer can be but be not limited only to heavy doping low stress polysilicon.
As an example, the insulating layer being located at below the temperature-sensitive resistor formed is the described in embodiment one
Three insulating layers 133, the insulating layer positioned at 113 lower section of adding thermal resistance is first insulating layer 112.
It should be noted that the sensitive resistance and the third insulating layer are simultaneously since Figure 12 is cross section structure schematic diagram
It is not shown, specifically sees the related elaboration in embodiment one.
In step 7), please refer to S7 step and Figure 13 in Fig. 5, the temperature-sensitive resistor both ends, it is described plus
The both ends of thermal resistance 113 and subsequent 203 surface of the top layer silicon that form anchor point form metal electrode.
As an example, can use but be not limited only to sputtering technology in the adding thermal resistance 113 and the exposed top layer
203 surface of silicon forms aluminum metal layer, both ends, the adding thermal resistance by photoetching, etching technics in the temperature-sensitive resistor
113 both ends and subsequent 203 surface of the top layer silicon that form anchor point form metal electrode.Positioned at the temperature-sensitive resistor
The metal electrode at both ends is the 4th electrode 132 described in embodiment one, the institute positioned at 113 both ends of adding thermal resistance
Stating metal electrode is second electrode 14 described in embodiment one, positioned at subsequent 203 table of the top layer silicon that form anchor point
The metal electrode in face is third electrode 15 described in embodiment one.
It should be noted that since Figure 13 is cross section structure schematic diagram, the institute positioned at the both ends of the temperature-sensitive resistor
The third electrode 15 for stating the 4th electrode 132 and subsequent 203 surface of the top layer silicon that form anchor point does not show in figure
Out, the related elaboration in embodiment one is specifically seen.
In step 8), S8 step and Figure 14 in Fig. 5, top layer silicon described in photoetching, deep reaction ion etching, shape are please referred to
At anchor point 12, heating beam 111 and resonance structure 10, the resonance structure 10 includes two extensional vibration beams 101 and is located at described
101 both ends of extensional vibration beam and with the extensional vibration beam 101 first electrode 102 connected vertically, referring specifically to embodiment
Dependency structure describes in one.
As an example, top layer silicon described in photoetching, deep reaction ion etching, forms anchor, 12, heating beam 111 and resonance structure
10 specific method is known to those skilled in the art, and and will not be described here in detail.
It should be noted that only showing described first in the resonance structure 10 since Figure 14 is cross section structure schematic diagram
Electrode 102.
In step 9), S9 step and Figure 15 in Fig. 5 are please referred to, is removed described except 12 corresponding region of anchor point
Buried oxide layer 202.
As an example, the etching work that can be combined using wet-etching technology, dry etch process or wet process with dry method
Skill removes the buried oxide layer 202 except 12 corresponding region of anchor point, it is preferable that in the present embodiment, uses hydrofluoric acid
Steam corrosion removes the buried oxide layer 202, to ultimately form required oscillator structure.
After the step, in the structure of formation, the silicon substrate 201 is the substrate 16 in embodiment one, and reservation is located at
The buried oxide layer 202 of 12 lower section of anchor point is second insulating layer 17 described in embodiment one.It is finally formed described
Oscillator is pressure resistance type Oven Controlled Oscillator described in embodiment one, specifically sees embodiment one, no longer tired herein
It states.
The preparation method of pressure resistance type Oven Controlled Oscillator of the present invention, formed the polysilicon high-ohmic layer it
Afterwards, the top layer of the soi wafer is still entirely silicon (including top layer silicon and low stress polysilicon), with conventional silicon etching process pair
The processing characteristics of monocrystalline silicon and polysilicon are approximately uniform, and anchor point, heating beam and resonance structure can be obtained subsequently through step quarter
10, machining accuracy is higher.
In conclusion the present invention provides a kind of pressure resistance type Oven Controlled Oscillator and preparation method thereof, the pressure resistance type is permanent
Temperature control oscillator includes: resonance structure, heating beam, polysilicon high-ohmic layer, the first insulating layer and adding thermal resistance；The resonance knot
Structure includes extensional vibration beam and first electrode；The quantity of the extensional vibration beam is two, two extensional vibration Liangpings row
It is intervally arranged；The first electrode is located at the both ends of two extensional vibration beams, and two extensional vibration beams are connected
It connects；The extensional vibration beam and the first electrode are along monocrystalline silicon<100>crystal orientation race directional spreding；The heating beam runs through institute
State two extensional vibration beams；The polysilicon high-ohmic layer between two extensional vibration beams, and by the heating beam every
Break as two parts；First insulating layer and the adding thermal resistance are successively covered in the upper surface of the heating beam from the bottom to top.
There are zero crossing, the temperature of frequency-temperature coefficient zero crossing for the frequency-temperature coefficient of the N-type heavy doping structure of edge<100>crystal orientation race
It is determined by doping concentration；By adjusting n-type doping concentration,<100>crystal orientation race temperature coefficient of resonance frequency zero crossing can be made to omit
Higher than the upper limit of oscillator operation warm area；Heating beam through resonance structure is set, and galvanization can be real on the heating beam
Existing thermostatic control, so that the pressure resistance type Oven Controlled Oscillator has preferable stability and preferable temperature characterisitic；?
The polysilicon high-ohmic layer is made between two extensional vibration beams, may be implemented to carry out piezoresistive detection to the oscillator；
Meanwhile the heating beam for being located at its two sides is connected into complete symmetrical two-end fixed beam by the polysilicon high-ohmic layer, it can be right
The resonance structure provides good support, is significantly reduced influence of the heating beam deformation to the resonance structure.
The above-described embodiments merely illustrate the principles and effects of the present invention, and is not intended to limit the present invention.It is any ripe
The personage for knowing this technology all without departing from the spirit and scope of the present invention, carries out modifications and changes to above-described embodiment.Cause
This, institute is complete without departing from the spirit and technical ideas disclosed in the present invention by those of ordinary skill in the art such as
At all equivalent modifications or change, should be covered by the claims of the present invention.
Claims (12)
1. a kind of pressure resistance type Oven Controlled Oscillator, which is characterized in that the pressure resistance type Oven Controlled Oscillator includes: resonance knot
Structure, heating beam, polysilicon high-ohmic layer, the first insulating layer and adding thermal resistance；
The material of the resonance structure and the heating beam is N-type heavy doping monocrystalline silicon；
The resonance structure includes extensional vibration beam and first electrode；The quantity of the extensional vibration beam is two, described two
The arrangement of extensional vibration Liangping row interval；The first electrode is located at the both ends of two extensional vibration beams, and by described two
Extensional vibration beam is connected；The extensional vibration beam and the first electrode are along monocrystalline silicon<100>crystal orientation race directional spreding；
The heating beam runs through two extensional vibration beams；
The polysilicon high-ohmic layer separates between two extensional vibration beams, and by the heating beam for two parts；
First insulating layer and the adding thermal resistance are successively covered in the upper surface of the heating beam from the bottom to top.
2. pressure resistance type Oven Controlled Oscillator according to claim 1, it is characterised in that: the midpoint of the heating beam and institute
The midpoint for stating resonance structure coincides.
3. pressure resistance type Oven Controlled Oscillator according to claim 1, it is characterised in that: the pressure resistance type thermostatic control vibration
Swinging device further includes anchor point, temperature sensor and second electrode；
The anchor point is located at the two sides of the resonance structure, and the both ends of the heating beam are connected with the anchor point respectively, institute
The both ends for stating the first insulating layer and the adding thermal resistance are respectively positioned on the upper surface of the anchor point；
The temperature sensor is located at the upper surface of the anchor point；
The second electrode is located at the surface at the adding thermal resistance both ends.
4. pressure resistance type Oven Controlled Oscillator according to claim 3, it is characterised in that: the material of the anchor point is N-type
Heavy doping monocrystalline silicon, and the resonance structure, the heating beam and the anchor point are integrated；The polysilicon high-ohmic layer
Material be undoped low stress polysilicon.
5. pressure resistance type Oven Controlled Oscillator according to claim 4, it is characterised in that: the N-type heavy doping monocrystalline silicon
The concentration of middle N-type heavy doping is greater than 1019/cm3。
6. pressure resistance type Oven Controlled Oscillator according to claim 3, it is characterised in that: the pressure resistance type thermostatic control vibration
Swinging device further includes third electrode, and the third electrode is located at the upper surface of the anchor point, and the resonance structure passes through the third
Electrode realizes that electricity is drawn.
7. pressure resistance type Oven Controlled Oscillator according to claim 3, it is characterised in that: the temperature sensor includes temperature
Spend sensitive resistance, the 4th electrode and second insulating layer；The temperature-sensitive resistor passes through the second insulating layer and the anchor point
It is connected, and realizes that electricity is drawn by the 4th electrode.
8. pressure resistance type Oven Controlled Oscillator according to claim 3, it is characterised in that: the temperature sensor includes temperature
Quick diode.
9. the pressure resistance type Oven Controlled Oscillator according to any one of claim 3 to 8, it is characterised in that: the pressure drag
Formula Oven Controlled Oscillator further includes substrate and third insulating layer, and the third insulating layer is located at the lower surface of the anchor point, institute
Anchor point is stated to be fixed on the surface of the substrate by the third insulating layer；The surface of the substrate and the resonance structure and
The lower surface of the heating beam has spacing.
10. pressure resistance type Oven Controlled Oscillator according to claim 1, it is characterised in that: the pressure resistance type thermostatic control
Oscillator package is in vacuum environment.
11. a kind of preparation method of pressure resistance type Oven Controlled Oscillator, which is characterized in that the preparation method includes:
1) soi wafer is provided, the soi wafer successively includes silicon substrate, buried oxide layer and top layer silicon from the bottom to top；
2) the first dielectric isolation layer is formed in the top layer silicon face；
3) first dielectric isolation layer and the top layer silicon are etched, is formed and runs through first dielectric isolation layer and the top layer
The deep trouth of silicon；
4) it is dielectrically separated from layer surface and the deep trouth described first and forms undoped low stress polysilicon layer, it is described not mix
Miscellaneous low stress polysilicon layer covering described first is dielectrically separated from layer surface and fills up the deep trouth；
5) the undoped low stress polysilicon layer and first dielectric isolation layer of the deep trouth periphery are successively removed；
6) the second dielectric isolation layer and resistive layer are sequentially formed in the top layer silicon face, defines adding thermal resistance figure and temperature passes
Sensor figure, what etching removed outside the adding thermal resistance figure and the temperature sensor graphics field described second is dielectrically separated from
Layer and the resistive layer with formation temperature sensitive resistance, adding thermal resistance, are located at the temperature-sensitive resistor and the adding thermal resistance
The insulating layer of lower section；
7) in the both ends of the temperature-sensitive resistor, the both ends of the adding thermal resistance and the subsequent top layer silicon that form anchor point
Surface forms metal electrode；
8) photoetching, top layer silicon described in deep reaction ion etching form anchor point, heating beam and resonance structure, the resonance structure packet
Include two extensional vibration beams and be located at extensional vibration beam both ends and with the extensional vibration beam first electrode connected vertically；
9) buried oxide layer except the anchor point corresponding region is removed.
12. the preparation method of pressure resistance type Oven Controlled Oscillator according to claim 11, it is characterised in that: the deep trouth
Width be less than or equal to twice of the low stress polysilicon layer thicknesses；The length of the deep trouth is greater than the width of the heating beam
The sum of degree and twice of lithography alignment deviation.
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| CN108516518B (en) * | 2018-05-11 | 2020-08-28 | 中国科学院电子学研究所 | Piezoresistive detection-based resonant pressure sensor and preparation method thereof |
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| CN1381397A (en) * | 2002-06-07 | 2002-11-27 | 西安交通大学 | Frequency output type combined microbeam resonator with self temp ecompensation function |
| CN101958696A (en) * | 2010-09-27 | 2011-01-26 | 张�浩 | Temperature compensation film bulk wave resonator and processing method thereof |
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| CN1381397A (en) * | 2002-06-07 | 2002-11-27 | 西安交通大学 | Frequency output type combined microbeam resonator with self temp ecompensation function |
| CN101958696A (en) * | 2010-09-27 | 2011-01-26 | 张�浩 | Temperature compensation film bulk wave resonator and processing method thereof |
| CN102098028A (en) * | 2010-10-14 | 2011-06-15 | 中国科学院上海微系统与信息技术研究所 | Complementary metal-oxide-semiconductor (CMOS) ring oscillator based on mixed crystal orientation silicon on insulator (SOI) technology and manufacturing method thereof |
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