CN106785886A - A kind of high-speed micro-strip line apparatus - Google Patents
A kind of high-speed micro-strip line apparatus Download PDFInfo
- Publication number
- CN106785886A CN106785886A CN201611190870.5A CN201611190870A CN106785886A CN 106785886 A CN106785886 A CN 106785886A CN 201611190870 A CN201611190870 A CN 201611190870A CN 106785886 A CN106785886 A CN 106785886A
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- area
- microstrip line
- laser
- pole microstrip
- positive pole
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- 238000004806 packaging method and process Methods 0.000 claims description 3
- 230000003287 optical effect Effects 0.000 abstract description 5
- 230000005540 biological transmission Effects 0.000 abstract description 3
- 238000010586 diagram Methods 0.000 description 5
- 239000010931 gold Substances 0.000 description 5
- 229910052737 gold Inorganic materials 0.000 description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 3
- 238000005538 encapsulation Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910017083 AlN Inorganic materials 0.000 description 2
- 241000209094 Oryza Species 0.000 description 2
- 235000007164 Oryza sativa Nutrition 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 235000009566 rice Nutrition 0.000 description 2
- 230000008054 signal transmission Effects 0.000 description 2
- 238000004364 calculation method Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- VIKNJXKGJWUCNN-XGXHKTLJSA-N norethisterone Chemical compound O=C1CC[C@@H]2[C@H]3CC[C@](C)([C@](CC4)(O)C#C)[C@@H]4[C@@H]3CCC2=C1 VIKNJXKGJWUCNN-XGXHKTLJSA-N 0.000 description 1
- 230000011514 reflex Effects 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
The present invention relates to a kind of high-speed micro-strip line apparatus, including laser positive pole microstrip line and laser negative pole microstrip line, laser positive pole microstrip line includes the area of laser positive pole microstrip line one, the area of laser positive pole microstrip line two and the area of laser positive pole microstrip line three, the area of laser positive pole microstrip line three is located at the right obliquely downward in the area of laser positive pole microstrip line one, and connected by the area of laser positive pole microstrip line two, laser negative pole microstrip line includes the area of laser negative pole microstrip line one, the area of laser negative pole microstrip line two and the area of laser negative pole microstrip line three, the area of laser negative pole microstrip line three is located at the left obliquely downward in the area of laser negative pole microstrip line one, and connected by the area of laser negative pole microstrip line two.The present invention realize microstrip line equivalent line width be about 230 microns, impedance be about 49 ohm, this is matched substantially with 50 ohm input impedances of common optical module, reduces the reflectance factor of high speed signal, improves the transmission quality of signal.
Description
Technical field
The present invention relates to communication technical field, more particularly to a kind of high-speed micro-strip line apparatus.
Background technology
Heat sink material used is aluminium nitride (AlN) in 10G laser coaxials encapsulation (TO), heat sink used by existing process
Thickness is typically 0.22 millimeter, and the equivalent line width of the metal micro-strip line on the AlN material surfaces of 0.22 millimeters thick is about 0.5 milli
Rice.Can be calculated by electromagnetism, for the AlN materials of 0.22 millimeters thick, 0.5 millimeter of metal micro-strip line of line width on its surface
Characteristic impedance is 30 ohms, and the input impedance of connected common optical module is 50 ohm, and the impedance of both is simultaneously
Mismatch, so as to the reflection of certain high speed signal can be caused.
The content of the invention
The present invention provides a kind of high-speed micro-strip line apparatus, heat sink with micro- in 10G laser coaxials encapsulation (TO) for solving
The impedance mismatch and signal reflex coefficient problem high of the impedance with line and common optical module.
The technical scheme that the present invention solves above-mentioned technical problem is as follows：A kind of high-speed micro-strip line apparatus, including：Laser is just
Pole microstrip line and laser negative pole microstrip line；
The laser positive pole microstrip line includes the area of laser positive pole microstrip line one, the area of laser positive pole microstrip line two and swashs
The area of light device positive pole microstrip line three；
The area of laser positive pole microstrip line three is located at the right obliquely downward in the area of laser positive pole microstrip line one, and passes through
The area of laser positive pole microstrip line two positioned at the middle of the laser positive pole microstrip line connects；
The area of laser positive pole microstrip line one is provided with the first gold wire bonding area；
The area of laser positive pole microstrip line three is provided with the 3rd gold wire bonding area；
The laser negative pole microstrip line includes the area of laser negative pole microstrip line one, the area of laser negative pole microstrip line two and swashs
The area of light device negative pole microstrip line three；
The area of laser negative pole microstrip line three is located at the left obliquely downward in the area of laser negative pole microstrip line one, and passes through
The area of laser negative pole microstrip line two positioned at the middle of the laser negative pole microstrip line connects；
The area of laser negative pole microstrip line one is provided with the second gold wire bonding area.
The beneficial effects of the invention are as follows：The present invention is by the geometry and laser negative pole to laser positive pole microstrip line
The redesign of the geometry of microstrip line so that the width in the first gold wire bonding area and the second gold wire bonding area is sufficiently wide
In the case of (being more than 400 microns), equivalent line width and laser negative pole microstrip line that can respectively to laser positive pole microstrip line
Equivalent line width be adjusted, it is micro- with the characteristic impedance and laser negative pole that obtain practically necessary laser positive pole microstrip line
Characteristic impedance with line.
On the basis of above-mentioned technical proposal, the present invention can also do following improvement.
Further, the width in the first gold wire bonding area and the second gold wire bonding area is described to swash more than 400 microns
The equivalent line width in the equivalent line width in the area of light device positive pole microstrip line two and the area of laser negative pole microstrip line two is 210~250
Micron, characteristic impedance is 48~52 ohm.
Further beneficial effect of the invention is：The equivalent line width and laser negative pole for adjusting laser positive pole microstrip line are micro-
Equivalent line width with line in 0.23 millimeter, realizes characteristic impedance and the laser negative pole of laser positive pole microstrip line respectively
The characteristic impedance of microstrip line respectively may be about 49 ohm, and this is matched substantially with 50 ohm input impedances of common optical module, from source
On reduce the reflectance factor of high speed signal, improve the transmission quality of signal.
Further, the area in the area in the first gold wire bonding area and the second gold wire bonding area is all higher than described
The area in three gold wire bonding areas.
Further, the horizontal width in the area of laser positive pole microstrip line three and the area of laser positive pole microstrip line one
The difference of horizontal width is less than 30 microns；The horizontal width and the laser negative pole in the area of laser negative pole microstrip line three are micro-
The difference of the horizontal width in the areas of Dai Xian mono- is less than 30 microns.
Further, the first gold wire bonding area and the second gold wire bonding area are external in connecing for coaxial packaging base
Terminal.
Further, the 3rd gold wire bonding area is external in chip of laser.
Further beneficial effect of the invention is：Bonding pad area is smaller on chip of laser, can only at most be bonded two gold
Silk, thus the 3rd gold wire bonding region compared with small area can be only reserved on laser positive pole microstrip line.In order to reduce chip
The additional impedance (mainly spun gold inductance) of gold wire bonding is, it is necessary on laser positive pole (LD+) microstrip line and laser during encapsulation
The larger region of area is reserved on device negative pole (LD-) microstrip line, to be bonded 3~6 spun golds, to meet high speed transmission of signals
Demand.
Further, the laser positive pole microstrip line is located at the left side of the laser negative pole microstrip line.
Further, the first gold wire bonding area is located at the left side of the laser positive pole microstrip line, second spun gold
Bonding region is located at the right side of the laser negative pole microstrip line.
Further, the first gold wire bonding area and the second gold wire bonding area are symmetrical.
Brief description of the drawings
Fig. 1 is a kind of schematic diagram of the high-speed micro-strip line apparatus described in the embodiment of the present invention；
Fig. 2 is the high-frequency structure analogous diagram of the high-speed micro-strip line apparatus shown in Fig. 1；
Fig. 3 is the high-frequency structure analogous diagram of existing microstrip line device；
Fig. 4 is the high-speed micro-strip line apparatus and the reflectance factor table of existing microstrip line device shown in Fig. 1.
In accompanying drawing, the element representated by each label is listed as follows：1st, laser positive pole microstrip line, 11, laser it is just atomic
The areas of Dai Xian mono-, 12, the area of laser positive pole microstrip line two, 13, the area of laser positive pole microstrip line three, 2, laser negative pole microstrip line,
21st, the area of laser negative pole microstrip line one, 22, the area of laser negative pole microstrip line two, 23, the area of laser negative pole microstrip line three, 3,
One gold wire bonding area, the 4, second gold wire bonding area, the 5, the 3rd gold wire bonding area.
Specific embodiment
Principle of the invention and feature are described below in conjunction with accompanying drawing, example is served only for explaining the present invention, and
It is non-for limiting the scope of the present invention.
As shown in figure 1, a kind of high-speed micro-strip line apparatus, including：Laser positive pole microstrip line 1 and laser negative pole microstrip line
2.Wherein,
Laser positive pole microstrip line 1 includes the area 11 of laser positive pole microstrip line one, the and of 2nd area of laser positive pole microstrip line 12
The area 13 of laser positive pole microstrip line three, the area 13 of laser positive pole microstrip line three is located at the right side in the area 11 of laser positive pole microstrip line one tiltedly
Lower section, and connected by the area 12 of laser positive pole microstrip line two positioned at the middle of laser positive pole microstrip line 1, laser is just
The area 11 of pole microstrip line one is provided with the first gold wire bonding area 3, and the area 13 of laser positive pole microstrip line three is provided with the 3rd gold wire bonding area 5,
Laser negative pole microstrip line 2 is negative including the area 21 of laser negative pole microstrip line one, the area 22 of laser negative pole microstrip line two and laser
The area 23 of pole microstrip line three, the area 23 of laser negative pole microstrip line three is located at the left obliquely downward in the area 21 of laser negative pole microstrip line one, and
Connected by the area 22 of laser negative pole microstrip line two positioned at the middle of laser negative pole microstrip line 2, laser negative pole micro-strip
The area 21 of line one is provided with the second gold wire bonding area 4.
Specifically, in this embodiment, the width in the first gold wire bonding area 3 and the second gold wire bonding area 4 is micro- more than 400
Rice, the equivalent line width L in the area 12 of laser positive pole microstrip line two1With the equivalent line width L in the area 22 of laser negative pole microstrip line two2About
It is 230 microns, characteristic impedance is each about 49 ohm, wherein, positioned at first gold wire bonding in the area 11 of laser positive pole microstrip line one
Area 3 and the second gold wire bonding area 4 positioned at the area 21 of laser negative pole microstrip line one are external in the binding post of coaxial packaging base,
The 3rd gold wire bonding area 5 positioned at the area 13 of laser positive pole microstrip line three is external in chip of laser, due on chip of laser
Bonding pad area is smaller, can only at most be bonded two spun golds, thus can be only reserved compared with small area on laser positive pole microstrip line
The 3rd gold wire bonding region.In order to reduce gold wire bonding during chip package additional impedance (mainly spun gold inductance), it is necessary to
The larger region of area is reserved on laser positive pole microstrip line and on laser negative pole microstrip line, to be bonded 3~6 gold
Silk, to meet the demand of high speed transmission of signals, therefore, the area in the area in the first gold wire bonding area 3 and the second gold wire bonding area 4
It is all higher than the area in the 3rd gold wire bonding area 5.However, it is desirable to illustrate, the level in the area 13 of laser positive pole microstrip line three is wide
The difference of the horizontal width in degree and the area 11 of laser positive pole microstrip line one is less than 30 microns, the area 23 of laser negative pole microstrip line three
The difference of the horizontal width in horizontal width and the area 21 of laser negative pole microstrip line one is less than 30 microns.
In addition, it is necessary to illustrate, high-frequency structure of the high-speed micro-strip line also by working frequency for 10G hertz is emulated
(HFSS) reflectance factor S11 is calculated, the high-frequency structure analogous diagram of high-speed micro-strip line apparatus of the present invention is as shown in Fig. 2 existing micro-
High-frequency structure analogous diagram with line apparatus is as shown in figure 3, the reflectance factor and existing microstrip line of high-speed micro-strip line apparatus of the present invention
The reflectance factor of device as shown in figure 4, wherein, in existing microstrip line, the equivalent line width and laser of laser positive pole microstrip line
The equivalent line width of negative pole microstrip line is each about 500 microns, and characteristic impedance is each about 30 ohm.This is obtained by HFSS simulation calculations
Each high speed signal reflectance factor that invention high-speed micro-strip line apparatus show shows reflection system than existing microstrip line device
Number reduces at least 3db.
Laser positive pole can represent that laser negative pole can be represented with LD- with LD+, by laser positive pole (LD+)
The redesign of the geometry of microstrip line and the geometry of laser negative pole (LD-) microstrip line so that the first gold wire bonding
The width in area and the second gold wire bonding area adjusts laser positive pole (LD+) micro-strip in the case of sufficiently wide (being more than 400 microns)
The equivalent line width of line and the equivalent line width of laser negative pole (LD-) microstrip line realize laser respectively in 0.23 millimeter
The characteristic impedance of positive pole (LD+) microstrip line and the characteristic impedance of laser negative pole (LD-) microstrip line respectively may be about 49 ohm, this with
50 ohm input impedances of common optical module are matched substantially, and the reflectance factor of high speed signal is reduced from source, improve letter
Number transmission quality.
In one embodiment, as shown in figure 1, laser positive pole microstrip line 1 is located at laser negative pole (LD-) microstrip line 2
Left side, the first gold wire bonding area 3 is located at the left side of laser positive pole (LD+) microstrip line 1, and the second gold wire bonding area 4 is located at swashs
The right side of light device negative pole (LD-) microstrip line 2, the first gold wire bonding area 3 and the second gold wire bonding area 4 are symmetrical.
The foregoing is only presently preferred embodiments of the present invention, be not intended to limit the invention, it is all it is of the invention spirit and
Within principle, any modification, equivalent substitution and improvements made etc. should be included within the scope of the present invention.
Claims (9)
1. a kind of high-speed micro-strip line apparatus, it is characterised in that including：Laser positive pole microstrip line (1) and laser negative pole micro-strip
Line (2)；
The laser positive pole microstrip line (1) includes the area (11) of laser positive pole microstrip line one, the area of laser positive pole microstrip line two
And the area (13) of laser positive pole microstrip line three (12)；
The area (13) of the laser positive pole microstrip line three positioned at the right obliquely downward in the area (11) of the laser positive pole microstrip line one, and
Connected by the area (12) of the laser positive pole microstrip line two positioned at the middle of the laser positive pole microstrip line (1)；
The area (11) of the laser positive pole microstrip line one is provided with the first gold wire bonding area (3)；
The area (13) of the laser positive pole microstrip line three is provided with the 3rd gold wire bonding area (5)；
The laser negative pole microstrip line (2) includes the area (21) of laser negative pole microstrip line one, the area of laser negative pole microstrip line two
And the area (23) of laser negative pole microstrip line three (22)；
The area (23) of the laser negative pole microstrip line three positioned at the left obliquely downward in the area (21) of the laser negative pole microstrip line one, and
Connected by the area (22) of the laser negative pole microstrip line two positioned at the middle of the laser negative pole microstrip line (2)；
The area (21) of the laser negative pole microstrip line one is provided with the second gold wire bonding area (4).
2. a kind of high-speed micro-strip line apparatus according to claim 1, it is characterised in that the first gold wire bonding area (3)
Width with the second gold wire bonding area (4) is more than 400 microns, the equivalent line in the area (12) of the laser positive pole microstrip line two
The equivalent line width in the area (22) of laser negative pole microstrip line two wide and described is 210~250 microns, and characteristic impedance is 48~52
Ohm.
3. a kind of high-speed micro-strip line apparatus according to claim 2, it is characterised in that the first gold wire bonding area (3)
Area and the area in the second gold wire bonding area (4) be all higher than the area of the 3rd gold wire bonding area (5).
4. a kind of high-speed micro-strip line apparatus according to claim 3, it is characterised in that the laser positive pole microstrip line three
The difference of the horizontal width in the horizontal width in area (13) and the area (11) of the laser positive pole microstrip line one is less than 30 microns；It is described
The horizontal width in the area (23) of laser negative pole microstrip line three and the horizontal width in the area (21) of the laser negative pole microstrip line one
Difference is less than 30 microns.
5. a kind of high-speed micro-strip line apparatus according to claim 4, it is characterised in that the first gold wire bonding area (3)
With the binding post that the second gold wire bonding area (4) is external in coaxial packaging base.
6. a kind of high-speed micro-strip line apparatus according to claim 5, it is characterised in that the 3rd gold wire bonding area (5)
It is external in chip of laser.
7. a kind of high-speed micro-strip line apparatus according to claim 4, it is characterised in that the laser positive pole microstrip line
(1) positioned at the left side of the laser negative pole microstrip line (2).
8. a kind of high-speed micro-strip line apparatus according to claim 7, it is characterised in that the first gold wire bonding area (3)
Positioned at the left side of the laser positive pole microstrip line (1), the second gold wire bonding area (4) is positioned at the laser negative pole micro-strip
The right side of line (2).
9. a kind of high-speed micro-strip line apparatus according to claim 8, it is characterised in that the first gold wire bonding area (3)
It is symmetrical with the second gold wire bonding area (4).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611190870.5A CN106785886A (en) | 2016-12-21 | 2016-12-21 | A kind of high-speed micro-strip line apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611190870.5A CN106785886A (en) | 2016-12-21 | 2016-12-21 | A kind of high-speed micro-strip line apparatus |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106785886A true CN106785886A (en) | 2017-05-31 |
Family
ID=58893538
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201611190870.5A Pending CN106785886A (en) | 2016-12-21 | 2016-12-21 | A kind of high-speed micro-strip line apparatus |
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| Country | Link |
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Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5602672A (en) * | 1995-09-20 | 1997-02-11 | Mitsubishi Denki Kabushiki Kaisha | Light modulator module and method for fabricating light modulator module |
| CN1574711A (en) * | 2003-06-20 | 2005-02-02 | 三星电子株式会社 | Optical receiver module with to-can structure |
| CN101127433A (en) * | 2006-08-17 | 2008-02-20 | 富士施乐株式会社 | Vcsel with improved high frequency characteristics, semiconductor laser device, module, and optical transmission device |
| CN202423821U (en) * | 2011-11-21 | 2012-09-05 | 武汉华工正源光子技术有限公司 | High speed packaging structure of laser diode |
| CN103163603A (en) * | 2011-12-16 | 2013-06-19 | 富士通光器件株式会社 | Optical transceiver and production method thereof |
| CN103579899A (en) * | 2013-11-21 | 2014-02-12 | 中国科学院半导体研究所 | Laser array heat sink module |
| CN105552712A (en) * | 2016-03-09 | 2016-05-04 | 中国科学院上海微系统与信息技术研究所 | Packaging device and method for terahertz quantum cascade laser |
| CN205583364U (en) * | 2016-04-07 | 2016-09-14 | 深圳市东飞凌科技有限公司 | Heat sink gasket reaches laser instrument including this heat sink gasket |
| CN206293766U (en) * | 2016-12-21 | 2017-06-30 | 武汉市观达科技有限责任公司 | A kind of high-speed micro-strip line apparatus |
-
2016
- 2016-12-21 CN CN201611190870.5A patent/CN106785886A/en active Pending
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5602672A (en) * | 1995-09-20 | 1997-02-11 | Mitsubishi Denki Kabushiki Kaisha | Light modulator module and method for fabricating light modulator module |
| CN1574711A (en) * | 2003-06-20 | 2005-02-02 | 三星电子株式会社 | Optical receiver module with to-can structure |
| CN101127433A (en) * | 2006-08-17 | 2008-02-20 | 富士施乐株式会社 | Vcsel with improved high frequency characteristics, semiconductor laser device, module, and optical transmission device |
| CN202423821U (en) * | 2011-11-21 | 2012-09-05 | 武汉华工正源光子技术有限公司 | High speed packaging structure of laser diode |
| CN103163603A (en) * | 2011-12-16 | 2013-06-19 | 富士通光器件株式会社 | Optical transceiver and production method thereof |
| CN103579899A (en) * | 2013-11-21 | 2014-02-12 | 中国科学院半导体研究所 | Laser array heat sink module |
| CN105552712A (en) * | 2016-03-09 | 2016-05-04 | 中国科学院上海微系统与信息技术研究所 | Packaging device and method for terahertz quantum cascade laser |
| CN205583364U (en) * | 2016-04-07 | 2016-09-14 | 深圳市东飞凌科技有限公司 | Heat sink gasket reaches laser instrument including this heat sink gasket |
| CN206293766U (en) * | 2016-12-21 | 2017-06-30 | 武汉市观达科技有限责任公司 | A kind of high-speed micro-strip line apparatus |
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