CN106711753A - Device for performing semiconductor laser external cavity feedback spectral beam combining by using multiple gratings - Google Patents
Device for performing semiconductor laser external cavity feedback spectral beam combining by using multiple gratings Download PDFInfo
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- CN106711753A CN106711753A CN201710008261.1A CN201710008261A CN106711753A CN 106711753 A CN106711753 A CN 106711753A CN 201710008261 A CN201710008261 A CN 201710008261A CN 106711753 A CN106711753 A CN 106711753A
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- laser
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- external cavity
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/09—Beam shaping, e.g. changing the cross-sectional area, not otherwise provided for
- G02B27/0916—Adapting the beam shape of a semiconductor light source such as a laser diode or an LED, e.g. for efficiently coupling into optical fibers
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/09—Beam shaping, e.g. changing the cross-sectional area, not otherwise provided for
- G02B27/0938—Using specific optical elements
- G02B27/0944—Diffractive optical elements, e.g. gratings, holograms
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/09—Beam shaping, e.g. changing the cross-sectional area, not otherwise provided for
- G02B27/0938—Using specific optical elements
- G02B27/095—Refractive optical elements
- G02B27/0955—Lenses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/14—External cavity lasers
- H01S5/141—External cavity lasers using a wavelength selective device, e.g. a grating or etalon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4012—Beam combining, e.g. by the use of fibres, gratings, polarisers, prisms
Abstract
The present invention discloses a device for performing semiconductor laser external cavity feedback spectral beam combining by using multiple gratings. The device comprises a laser array, a fast axis collimating lens, a beam combining lens, a first-stage grating, a beam combining component, a second-stage grating and a feedback element; the laser array comprises M laser linear arrays, wherein each laser linear array comprises a plurality of laser units; laser beams emitted by the laser units on each laser line array are collimated by the fast axis collimating lens, and the collimated laser beams are parallelly emitted to the beam combining lens; the beam combining lens performs beam combining on the laser beams and sends a combined laser beam to the first-stage grating, so that one laser beam can be obtained; M laser beams are emitted from the first-stage grating; the beam combining component performs beam combining on the M laser beams and emits one combined laser beam to the second-stage grating; and the feedback element performs wavelength locking on the combined laser beam, so that high-power and high-quality semiconductor direct output laser can be obtained. With the device of the invention adopted, the spectral beam combining of the plurality of laser linear arrays can be realized simultaneously, and the quality of the obtained laser beam is equivalent to that of the laser beam of a single laser unit, and output power is far beyond a semiconductor laser light source of a single laser linear array.
Description
Technical field
The invention belongs to laser technology field, more particularly to one kind semiconductor laser external cavity feedback light is carried out using many gratings
Spectrum closes the device of beam.
Background technology
Because semiconductor laser has high light beam quality, heat dissipation characteristics are good, the advantages of long lifespan, therefore in laser doctor
The aspects such as treatment, optical fiber laser pump, laser monitor, Laser Processing suffer from being widely applied.But recently as partly leading
The development of body laser technology application, field higher is required for the welding of such as metal, laser cutting etc., semiconductor laser
Using still acquiring a certain degree of difficulty, improve the beam quality of semiconductor laser, the brightness of outgoing laser beam is improved, for high-power half
The development and application of conductor laser are significant.
Spectrum beam combination is realized by external cavity feedback, the brightness of semiconductor laser can be effectively improved, it is not increasing by half
The beam quality for closing Shu Fangxiang is reduced to single while the beam quality of light beam on the non-conjunction Shu Fangxiang of conductor laser and is lighted
The beam quality of unit.The method in United States Patent (USP) US7065107B2, US6192062B1, US6208679, US874222B2 and
Notification number is many 102986097A of C, the state of entitled " selectivity is repositioned and rotation wavelength beam combination system and method "
Interior patent is on the books, but these spectrum beam combination methods close beam primarily directed to single bar laser linear arrays, is ensureing beam quality
While, laser output power is limited, therefore in high-power, high light beam quality laser application scenario, still by power limit.
The content of the invention
It is an object of the invention to provide a kind of dress that semiconductor laser external cavity feedback spectrum beam combination is carried out using many gratings
Put.
Therefore, the invention provides a kind of device that semiconductor laser external cavity feedback spectrum beam combination is carried out using many gratings,
Including laser array, fast axis collimation mirror, light combination mirror, first order grating, conjunction beam part, second level grating and feedback element.
The laser array includes M laser linear array, and each laser linear array includes multiple laser cells.
Exiting parallel is extremely after the fast axis collimation mirror is collimated respectively for multiple laser cells in each laser linear array
Light combination mirror is closed on beam to first order grating, forms a laser beam；
M beams laser beam closes beam to second level grating again from first order grating outgoing ECDC beam part, then by feedback
Element carries out wavelength locking, obtains high power, the semiconductor of high light beam quality directly exports laser.
Preferably, the light combination mirror is condenser lens.
Preferably, the beam part of closing is one or two in speculum, lens or prism.
Preferably, the first order grating is the grating of demand pairs high.
Preferably, the second level grating is the grating of low demand pairs.
Preferably, the feedback element is level crossing, planoconvex spotlight or the plano-concave lens one kind for plating part reflectance coating.
Further, also including slow axis collimating mirror and Beam rotation mirror, the multiple laser cells in each laser linear array
Respectively after the fast axis collimation mirror is collimated, by Beam rotation mirror by the fast axle hot spot of each laser cell and slow axis hot spot
Rotated, exiting parallel is to light combination mirror after then slow axis hot spot is collimated by slow axis collimating mirror.
Further, the conjunction beam part includes speculum and focus lamp, and M laser beam swashs from first order grating outgoing
Each beam laser beam directive property and non-conjunction beam director space position adjustments are unanimously passed through condenser lens again by the reflected mirror of light beam afterwards
Close on beam to second level grating.
Preferably, the conjunction beam part when being only speculum, in angle arrange by speculum, so that M beams laser beam is from first
It is incident on grating with the angle matched with second level grating after level grating outgoing, reaches the purpose for closing beam.
Disclosure based on above-mentioned technical proposal, compared with prior art, described being carried out using many gratings of present invention offer
The device of semiconductor laser external cavity feedback spectrum beam combination, can simultaneously realize the spectrum beam combination to multiple laser linear arrays, its light beam matter
Measure equivalent to single laser cell, the semiconductor laser light resource of the remote super single laser linear array of power output.
Brief description of the drawings
Fig. 1 is basic structure principle schematic of the invention；
Fig. 2 is to carry out the principle schematic diagram. that quick shaft direction closes beam；
Fig. 3 is to carry out the principle schematic diagram. that slow-axis direction closes beam.
Specific embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is carried out clear, complete
Site preparation is described, it is clear that described embodiment is only a part of embodiment of the invention, rather than whole embodiments.It is based on
Embodiment in the present invention, it is every other that those of ordinary skill in the art are obtained under the premise of creative work is not made
Embodiment, belongs to the scope of protection of the invention.
Embodiment 1
Refer to Fig. 1, there is provided a kind of basic to carry out semiconductor laser external cavity feedback spectrum beam combination using many gratings
Device, including laser array 1, fast axis collimation mirror 2, light combination mirror 3, first order grating 4, the conjunction beam part 5, and of second level grating 6
Feedback element 7.
The laser array 1 includes M laser linear array, and each laser linear array includes multiple laser cells；Each
Exiting parallel to light combination mirror 3 closes beam to multiple laser cells in laser linear array after the fast axis collimation mirror 2 is collimated respectively
To first order grating 4, one laser beam is formed；M beams laser beam closes beam again from the outgoing ECDC beam part 5 of first order grating 4
To second level grating 6, then wavelength locking is carried out by feedback element 7, obtain high power, high light beam quality semiconductor it is direct
Output laser.
Embodiment 2
Refer to Fig. 2, there is provided what a kind of quick shaft direction closed beam carries out semiconductor laser external cavity feedback spectrum using many gratings
Close the device of beam, including laser array 1, fast axis collimation mirror 2, light combination mirror 3, first order grating 4, speculum 10, condenser lens
11st, second level grating 6, feedback element 7, slow axis collimating mirror 8, Beam rotation mirror 9.
The laser array 1 includes M laser linear array, and each laser linear array includes multiple laser cells；Each
Laser linear array passes through Beam rotation mirror 9 by the fast axial light of each laser cell after the fast axis collimation mirror 2 is collimated respectively
Spot is rotated with slow axis hot spot, and exiting parallel is to light combination mirror 3 after then slow axis hot spot is collimated by slow axis collimating mirror 8
Close on beam to first order grating 4, form one laser beam；M beams laser beam is from the reflected mirror 10 of the outgoing of first order grating 4 by each beam
Beam is closed to second level grating 6 by condenser lens 11 again after the regulation of laser beam directive property is consistent, then is entered by feedback element 7
Row wavelength locking, obtains high power, the semiconductor of high light beam quality directly exports laser.
Embodiment 3
Refer to Fig. 3, there is provided a kind of slow-axis direction using many gratings carries out semiconductor laser external cavity feedback spectrum beam combination
Device, including laser array 1, fast axis collimation mirror 2, light combination mirror 3, first order grating 4, speculum 10, second level grating 6,
Feedback element 7, slow axis collimating mirror 8.
Its principle of its principle is similar to Example 2, but do not need Beam rotation mirror carry out hot spot conversion, can directly be closed
Beam.Also it is extended to semiconductor laser fast axle simultaneously and slow axis is mutually combined and carries out spectrum beam combination twice.
In all embodiments, the light combination mirror 3 is condenser lens；Speculum 10 in angle arrange so that M beams laser beam from
It is incident on grating (6) with the angle matched with second level grating after first order grating (4) outgoing, reaches the purpose for closing beam.
Each laser cell corresponds to a centre wavelength respectively after the completion of closing beam, and differs.
To sum up, the device that semiconductor laser external cavity feedback spectrum beam combination is carried out using many gratings that the present invention is provided,
The spectrum beam combination to multiple laser arrays can be simultaneously realized, equivalent to single laser cell, power output far surpasses its beam quality
The semiconductor laser light resource of single laser array.
Although an embodiment of the present invention has been shown and described, for the ordinary skill in the art, can be with
Understanding can carry out various changes, modification, replacement to these embodiments without departing from the principles and spirit of the present invention
And modification, the scope of the present invention be defined by the appended.
Claims (7)
1. a kind of device that semiconductor laser external cavity feedback spectrum beam combination is carried out using many gratings, it is characterised in that including laser
Device array (1), fast axis collimation mirror (2), light combination mirror (3), first order grating (4), close beam part (5), second level grating (6) and instead
Feedback element (7), wherein：
The laser array (1) includes M laser linear array, and each laser linear array includes multiple laser cells；
Exiting parallel is extremely closed multiple laser cells in each laser linear array after the fast axis collimation mirror (2) collimates respectively
Shu Jing (3) is closed on beam to first order grating (4), forms a laser beam；
M beams laser beam is closed on beam to second level grating (6) again from first order grating (4) outgoing ECDC beam part (5), then is passed through
Feedback element (7) carries out wavelength locking, obtains high power, the semiconductor of high light beam quality directly exports laser.
2. a kind of device that semiconductor laser external cavity feedback spectrum beam combination is carried out using many gratings according to claim 1,
Characterized in that, the light combination mirror is condenser lens (3).
3. a kind of device that semiconductor laser external cavity feedback spectrum beam combination is carried out using many gratings according to claim 1,
Characterized in that, it is described close beam part (5) be speculum, one or two in lens or prism.
4. a kind of device that semiconductor laser external cavity feedback spectrum beam combination is carried out using many gratings according to claim 1,
Characterized in that, the first order grating (4) is the grating of demand pairs high, second level grating (6) is low demand pairs grating.
5. a kind of device that semiconductor laser external cavity feedback spectrum beam combination is carried out using many gratings according to claim 1,
Characterized in that, also including slow axis collimating mirror (8) and Beam rotation mirror (9), the multiple laser cells in each laser linear array
Respectively by the fast axis collimation mirror (2) collimate after, by Beam rotation mirror (9) by the fast axle hot spot of each laser cell with it is slow
Axle hot spot is rotated, and exiting parallel is to light combination mirror (3) after then slow axis hot spot is collimated by slow axis collimating mirror (8).
6. a kind of device that semiconductor laser external cavity feedback spectrum beam combination is carried out using many gratings according to claim 1,
Characterized in that, conjunction beam part (5) includes speculum (10) and focus lamp (11), M laser beam is from first order grating (4)
The reflected mirror of outgoing (10) will again close beam to second level light after the regulation unanimously of each beam laser beam directive property by focus lamp (11)
On grid (6).
7. a kind of device that semiconductor laser external cavity feedback spectrum beam combination is carried out using many gratings according to claim 6,
Characterized in that, speculum (10) in angle arrange so that M beams laser beam from after first order grating (4) outgoing with the second level
The angle that grating matches is incident on second level grating (6) purpose that beam is closed to reach.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710008261.1A CN106711753A (en) | 2017-01-05 | 2017-01-05 | Device for performing semiconductor laser external cavity feedback spectral beam combining by using multiple gratings |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201710008261.1A CN106711753A (en) | 2017-01-05 | 2017-01-05 | Device for performing semiconductor laser external cavity feedback spectral beam combining by using multiple gratings |
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108321677A (en) * | 2018-04-28 | 2018-07-24 | 上海高意激光技术有限公司 | A kind of semiconductor laser beam merging apparatus |
| CN108549155A (en) * | 2018-04-01 | 2018-09-18 | 额尔德尼毕利格 | Swash combiner method |
| CN108803065A (en) * | 2018-06-06 | 2018-11-13 | 上海飞博激光科技有限公司 | A kind of intensive fiber array spectrum beam combination device and method |
| CN111487639A (en) * | 2020-04-20 | 2020-08-04 | 深圳奥锐达科技有限公司 | Laser ranging device and method |
| CN111699423A (en) * | 2017-12-29 | 2020-09-22 | 南京镭芯光电有限公司 | Fiber photon engine comprising planar diode rings in cylindrical arrangement coupled into capillary/sheath fibers |
| CN112993747A (en) * | 2021-02-08 | 2021-06-18 | 苏州长光华芯光电技术股份有限公司 | Wavelength locking semiconductor laser system |
| CN113131340A (en) * | 2021-04-08 | 2021-07-16 | 中国科学院理化技术研究所 | Semiconductor laser with external cavity modulation |
| US20210296858A1 (en) * | 2018-09-13 | 2021-09-23 | Ii-Vi Suwtech, Inc. | Laser beam combining device with an unstable resonator cavity |
| CN114243452A (en) * | 2022-02-24 | 2022-03-25 | 深圳市星汉激光科技股份有限公司 | Interlocking light path of semiconductor laser |
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Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN111699423A (en) * | 2017-12-29 | 2020-09-22 | 南京镭芯光电有限公司 | Fiber photon engine comprising planar diode rings in cylindrical arrangement coupled into capillary/sheath fibers |
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| CN108803065A (en) * | 2018-06-06 | 2018-11-13 | 上海飞博激光科技有限公司 | A kind of intensive fiber array spectrum beam combination device and method |
| US20210296858A1 (en) * | 2018-09-13 | 2021-09-23 | Ii-Vi Suwtech, Inc. | Laser beam combining device with an unstable resonator cavity |
| CN111487639A (en) * | 2020-04-20 | 2020-08-04 | 深圳奥锐达科技有限公司 | Laser ranging device and method |
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| CN112993747A (en) * | 2021-02-08 | 2021-06-18 | 苏州长光华芯光电技术股份有限公司 | Wavelength locking semiconductor laser system |
| CN113131340A (en) * | 2021-04-08 | 2021-07-16 | 中国科学院理化技术研究所 | Semiconductor laser with external cavity modulation |
| CN114243452A (en) * | 2022-02-24 | 2022-03-25 | 深圳市星汉激光科技股份有限公司 | Interlocking light path of semiconductor laser |
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Application publication date: 20170524 |