CN106656076A - Radio frequency power amplifier supporting multi-mode and multi-frequency, chip and communication terminal - Google Patents
Radio frequency power amplifier supporting multi-mode and multi-frequency, chip and communication terminal Download PDFInfo
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- CN106656076A CN106656076A CN201611268929.8A CN201611268929A CN106656076A CN 106656076 A CN106656076 A CN 106656076A CN 201611268929 A CN201611268929 A CN 201611268929A CN 106656076 A CN106656076 A CN 106656076A
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F3/217—Class D power amplifiers; Switching amplifiers
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F3/213—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only in integrated circuits
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
- Y02D30/00—Reducing energy consumption in communication networks
- Y02D30/70—Reducing energy consumption in communication networks in wireless communication networks
Abstract
The invention discloses a radio frequency power amplifier supporting multi-mode and multi-frequency, a chip and a communication terminal. The radio frequency power amplifier comprises a control and bias unit and at least two amplified emission paths, and the control and bias unit is separately connected with the amplified emission paths; and the control and bias unit controls the corresponding amplified emission path to locate in a turn-on state according to the frequency band of inputting a radio frequency signal and locating the rest amplified emission paths in a closed state. According to the radio frequency power amplifier disclosed by the invention, the optimal amplified emission path can be selected according to different frequency bands, the turn-on and turn-off of a corresponding amplification unit and a switching unit are controlled by the control and bias unit so as to amplify the radio frequency signals of different frequency bands, on one hand, the design principle of the F type power amplifiers is satisfied as much as possible to consider both of the output power and the power additional efficiency, on the other hand, corresponding harmonic waves of the amplified emission paths are filtered, so the demands of the carrier aggregation technology can be met, and the loss of the radio frequency signals on the output paths is reduced.
Description
Technical field
The present invention relates to a kind of radio-frequency power amplifier, more particularly to a kind of support that the radio-frequency power of multimode multi-frequency amplifies
Device, also relates to include the chip of the radio-frequency power amplifier and communication terminal, belongs to technical field of radio frequency integrated circuits.
Background technology
It is well known that radio-frequency power amplifier is widely used in wireless communication field.In order to adapt to modern communicationses cause pair
The higher and higher requirement of communication speed, various communication terminal devices must develop skill step by step index, to meet this demand.
For example, in order to meet demand of the 4G cell phone to message transmission rate, mainstream vendor's such as high pass (Qualcomm), Lian Fake and spreadtrum
Carrier aggregation technology is adopted on its product Deng beginning (Carrier Aggregation are abbreviated as CA).Correspondingly, radio frequency work(
Rate amplifier is also required to have higher power output and power added efficiency.
According to the inherent characteristic of radio-frequency power amplifier, to pursue higher power output, power is inevitably resulted in attached
Plus reduction, the increase of operating current of efficiency.That is, it is a pair of lances to increase power output and improve power added efficiency
Shield.In the prior art, radio-frequency power amplifier generally improves power added efficiency by reducing the transistor work angle of flow.
This method can but reduce power output while power added efficiency is improved.
Currently, the appearance of harmonic controling power-like amplifier has been overturned this tradition and has put forward efficient method.They pass through
Adjustment transistor output current, voltage waveform reduce transistor dissipation to improve efficiency.E classes, F power-like amplifiers are wherein most
For typical two kinds.In theory, E power-like amplifiers make transistor be operated in switching mode by the way of overdriving, and pass through
Specific output network is caused to be occurred when transistor output current voltage is different, and is ensured the zero of transistor open and close moment
Voltage switch (ZVS), no-voltage slope switch (ZVDS) condition, can make its theoretical efficiency higher.But, E class power amplifications
Utensil has obviously design limiting factor.These factors include transistor parasitic capacitance, matching network, biasing circuit, open
Close dutycycle etc., they cause jointly E power-like amplifiers cannot large-scale application in commercial communication field.
The content of the invention
Primary technical problem to be solved by this invention is to provide a kind of radio-frequency power amplifier for supporting multimode multi-frequency.
Another technical problem to be solved by this invention is to provide a kind of integrated electricity including the radio-frequency power amplifier
Road chip and corresponding communication terminal.
For achieving the above object, the present invention adopts following technical schemes：
A kind of first aspect according to embodiments of the present invention, there is provided radio-frequency power amplifier for supporting multimode multi-frequency, including
Control and bias unit, at least two amplification transmitting paths, the control and bias unit amplify transmitting path phase with each respectively
Even；
The control and bias unit control corresponding amplification transmitting path in leading according to the frequency range of input radio frequency signal
Logical state, and it is closed remaining transmitting path.
Wherein more preferably, amplify in transmitting path at each, including the input matching circuit being linked in sequence, amplify single
Unit, output matching circuit, harmonic filtration network and output switching unit.
Wherein more preferably, the output end of the output switching unit by multiple switches for being independently connected and disconnecting with it is right
The radio-frequency transmissions path answered is connected；The control and bias unit control the output switching unit, select corresponding radio frequency to send out
Penetrate outlet openings radiofrequency signal.
Wherein more preferably, the output switching unit includes at least one common port, the common port and it is described output
It is connected with circuit and the harmonic filtration network.
Wherein more preferably, the radio-frequency power amplifier also includes input switch unit；
The each input matching circuit amplified in transmitting path of output end connection of the input switch unit, for root
According to the control and the control of bias unit, corresponding rf inputs are selected to receive radiofrequency signal.
Wherein more preferably, in phase3 cell phone platforms, when input signal pin includes LB and LB_700, the input
Switch unit is omitted.
Wherein more preferably, the input of the amplifying unit is connected with corresponding input matching circuit, the input matching
The input of circuit is connected with the output end of corresponding input switch unit, the input and at least of the input switch unit
Individual rf inputs are connected.
Wherein more preferably, the output matching circuit combines together with the harmonic filtration network.
Wherein more preferably, each target rejection frequency for amplifying the harmonic filtration network that transmitting path is included, with it
The target rejection frequency of the harmonic filtration network included in remaining amplification transmitting path is different；
Same amplify transmitting path in, comprising multiple harmonic filtration networks target rejection frequency it is identical.
Wherein more preferably, amplify in transmitting path at each, cover the load impedance design of the second harmonic of frequency range
For short circuit, the load impedance of triple-frequency harmonics is designed as open circuit.
A kind of second aspect according to embodiments of the present invention, there is provided IC chip, which includes above-mentioned radio frequency
Power amplifier.
A kind of third aspect according to embodiments of the present invention, there is provided communication terminal, which includes above-mentioned radio-frequency power
Amplifier.
Compared with prior art, the radio-frequency power amplifier of support multimode multi-frequency provided by the present invention, can basis
Different frequency range selects optimum amplification transmitting path, and by control and bias unit corresponding amplifying unit and switch unit are controlled
Conducting with close, realize the amplification to the radiofrequency signal of different frequency range, the design of F power-like amplifiers is on the one hand met as far as possible
Principle, takes into account power output and power added efficiency, on the other hand filters each corresponding harmonic wave for amplifying transmitting path, Ke Yiman
The demand of sufficient carrier aggregation technology, and reduce loss of the radiofrequency signal on output channel.
Description of the drawings
Fig. 1 is one through simplified radio-frequency power amplifier schematic diagram；
Fig. 2 is the radio-frequency power amplifier schematic diagram of a typical support multimode multi-frequency；
Fig. 3 is the schematic diagram of the radio-frequency power amplifier for considering carrier aggregation technology demand；
Fig. 4 is the theory diagram of the radio-frequency power amplifier proposed in the first embodiment of the present invention；
Fig. 5 is the theory diagram of the radio-frequency power amplifier proposed in the second embodiment of the present invention；
Fig. 6 is the theory diagram of the radio-frequency power amplifier proposed in the third embodiment of the present invention.
Specific embodiment
Below in conjunction with the accompanying drawings the technology contents of the present invention are described in further detail with specific embodiment.
In order to absolutely prove condition and original that power added efficiency is further improved under the premise of power output is maximized
Reason, is defined first in the present invention to the structure of radio-frequency power amplifier.Fig. 1 is one and amplifies through simplified radio-frequency power
Device schematic diagram, wherein PinIt is input power, PoutIt is power output, PDCIt is the DC power of power amplifier.In work shape
The radio-frequency power amplifier of state, the time-domain expression of its voltage and current is as follows：
In above formula, ξnWithThe electric current of nth harmonic and the phase place of voltage are represented, the impedance of nth harmonic can be expressed as：
The DC power P of circuitDCThe power P consumed with circuit itselfdisRespectively：
PDC=VDD*I0
The power P of the n-th harmonic that load-receipt is arrivedout,nfFor：
Based on above-mentioned each formula, can be by the DC power P of circuitDCIt is rearranged as：
In actual use, only fundamental power is only it is desirable that load the power for obtaining, and higher hamonic wave work(
Producing for rate only can reduce putting the power added efficiency of power amplifier.If from formula above it is found that power amplifier
Need to realize higher power added efficiency, then need to reduce Section 1 and Section 3, this two represent respectively reduction power and put
Big device power consumption and reduction harmonic power.F power-like amplifiers are exactly the Typical Representative of this power-like amplifier.F class power amplifications
The mentality of designing of device is to carry out harmonics restraint to its output end, output end obtain the voltage signal of approximate square waves and it is approximate partly just
The current signal of string ripple.Preferable F power-like amplifiers, the even harmonic voltages component of output end is zero, and odd harmonic is electric
Flow component is zero, therefore can significantly reduce harmonic power.Simultaneously as odd harmonic component of voltage is to fundametal compoment voltage
Modulating action so that on the premise of load terminal voltage level is not totally uprised, increased the power of fundametal compoment, reached with this and carried
Purpose of both the power output of high power amplifier and power added efficiency.
But, the realization of F power-like amplifiers also has its limiting factor.Generally, it is electric in order to take into account performance, mobile phone
The factors such as road plate suqare, production cost, radio-frequency power amplifier realizes its load using passive matching network, can only be secondary humorous
Impedance short circuit and triple-frequency harmonics impedance open circuit are realized on wave point frequency, or the narrower frequency range centered on second harmonic can only be realized
Impedance open circuit in interior impedance short circuit, the narrower frequency range centered on triple-frequency harmonics.Such case is more next with what is faced instantly
Wider communications band demand defines contradiction.
In addition to the challenge that bandwidth problem described above is caused, the progressively popularization and application of carrier aggregation technology are also to penetrating
The power amplifier of frequency front end proposes more requirements.The application of carrier aggregation technology, objectively causes radio-frequency power to amplify
Device allows for exporting higher power to antenna end.In addition, the output end of radio-frequency power amplifier must be added to more
Harmonic filtration network, it is ensured that the higher hamonic wave of transmitting frequency range is coupled to and receives the signal strength signal intensity of frequency range and have to be lower than and normally receive
More than signal 10dB, so just can ensure that normal receiving sensitivity, it is ensured that mobile phone receives unaffected.Such as low-frequency range (low
Band) the triple-frequency harmonics output of band17 (704-716MHz) overlaps with the reception frequency range (2110-2170MHz) of band1,
The second harmonic output of band8 (880-915MHz) overlaps with the reception frequency range (1805-1880MHz) of band3, if corresponding humorous
Ripple power output can not meet standard, will fall under carrier aggregation mode in correspondingly received frequency range, deteriorate receiving sensitivity.
From the beginning of Phase2 cell phone platforms, support multimode multi-frequency radio-frequency power amplifier start progressively to instead of it is conventional
One-segment radio-frequency power amplifier.It is this to support that the radio-frequency power amplifier of multimode multi-frequency is needed comprising control, amplification, signal choosing
It is logical to wait functional unit.As shown in Fig. 2 the radio-frequency power amplifier of a typical support multimode multi-frequency (supports phase2 mobile phones
Platform and phase3 cell phone platforms) include that control and bias unit (or control unit splits with bias unit), at least one-level are put
Big unit, input matching circuit, intervalve matching circuit, output matching circuit, receiving and transmitting signal gating switch.The radio-frequency power amplifies
Advantage of the device in terms of layout is succinct, it is easy to understood, it is easy to control of the control unit to whole radio-frequency power amplifier module；
Shortcoming is that amplifying unit needs to cover all target frequencies by a single match circuit.It is as explained above to understand,
The second harmonic of high frequency points can be close to the triple-frequency harmonics of low frequency point and even overlap, and considerably increase Design of RF Power Amplifier
Difficulty so that actual radio-frequency power amplifier cannot realize F power-like amplifiers at all, have a greatly reduced quality in performance.
If considering further that the demand of carrier aggregation technology, then the radio-frequency power amplifier shown in Fig. 2 needs further to increase
Plus complexity.As shown in figure 3, harmonic filtration network is increased in load matching network, with the low frequency of phase3 cell phone platforms
As a example by section (low band), the load end of radio-frequency power amplifier will be increased to few two harmonic filtration networks, be respectively used to suppression
The triple-frequency harmonics of band17 processed and the second harmonic of band8.The increase of the two harmonic filtration networks, will necessarily further increase
The insertion loss of the output matching circuit of radio-frequency power amplifier, reduces power output.Certainly, we can also be by sacrificing effect
Rate reaches the purpose for maintaining power output.That is, it is one true that the communication standard that 3GPP agreements specify defines power output
Fixed value, in order to maintain power output constant, it is necessary to sacrifice power added efficiency as cost.This means the increasing of operating current
Plus, the cruising time for also implying that battery of mobile phone shortens.This is Cell Phone Design company and cell phone customer it is not desirable that seeing.
Can be seen that to meet carrier aggregation technology application from the theory diagram of the radio-frequency power amplifier shown in Fig. 3
Demand, between the output matching circuit and receiving and transmitting signal gating switch of radio-frequency power amplifier, contain two harmonic filtrations
Network, i.e. band X and band Y.By taking phase3 cell phone platforms as an example, in the radio-frequency power amplifier of low-frequency range (low band)
Need to cover band5/band8/band12/band13/band14/band17/band20/band26/ba nd27/band28,
Covering frequence scope is 699-915MHz.From the output matching circuit of radio-frequency power amplifier and receiving and transmitting signal gating switch it
Between, it is necessary to place the harmonic filtration network and the harmonic filtration net for band8 second harmonics of the triple-frequency harmonics for being directed to band17
Network, but for the band5/band8/band12/band13/band14/band20/band26/ in addition to band17
Band27/band28, and do not need triple-frequency harmonics to filter network.The triple-frequency harmonics filters the presence of network, increased insertion and damages
Consumption, causes the reduction of power output.As a same reason, for the band5/band12/band13/band14/ in addition to band8
Band17/band20/band26/band27/band28, and do not need second harmonic to filter network, the second harmonic filters net
The presence of network also increases insertion loss, reduces power output.
Inventor thinks with reference to long-term R ＆ D experience：The second harmonic and triple-frequency harmonics of radio-frequency power amplifier are closed
Reason control is remarkably improved its performance, and F power-like amplifiers realize second harmonic by input and output harmonic wave matching network
The short circuit of impedance and the open circuit of triple-frequency harmonics impedance realizing F power-like amplifiers, so as to effectively improve power output and power
Added efficiency.
For this purpose, radio-frequency power amplifier provided by the present invention is by least two amplification transmitting paths of design, by this
A little transmitting paths of amplifying cooperate to cover all low-frequency ranges (low band).In the radio-frequency power amplifier, control and
Bias unit (or control unit splits with bias unit) is connected with all amplification transmitting paths.According to the frequency range of radiofrequency signal,
Opened with the amplification transmitting path that the radiofrequency signal matches by control and bias unit control, meanwhile, control and bias and be single
Unit controls remaining all amplification transmitting path and is closed.Specifically, control and bias unit respectively with each
Each amplifying unit amplified in transmitting path is connected, and controls each amplifying unit by providing appropriate bias condition and locates respectively
In turned on or off.
On the other hand, control and bias unit are connected respectively with input switch unit, amplifying unit, output switching unit,
Control unit is on or closed mode.Simultaneously controlled output switch unit selects to penetrate accordingly for control and bias unit
Frequency transmission path launches radiofrequency signal, and control input switch unit selects corresponding rf inputs to receive radiofrequency signal, really
Protect the amplification transmitting path can normally input radio frequency signal, amplify radiofrequency signal, output radiofrequency signal.
In each amplification transmitting path, including input matching circuit, amplifying unit, the output matching being linked in sequence
Circuit, harmonic filtration network and output switching unit.The output end of the amplifying unit is by output matching circuit and harmonic filtration
Network is connected with output switching unit.Above-mentioned output switching unit includes at least one common port, the common port with output
It is connected with circuit and harmonic filtration network.The output end of output switching unit by multiple switches for being independently connected and disconnecting and
Corresponding multiple radio-frequency transmissions paths are connected.
In addition, each is amplified transmitting path comprising at least one-level amplifying unit.If comprising two-stage above amplifying unit,
Then it is connected by intervalve matching circuit between amplifying units at different levels, the intervalve matching circuit may include harmonic filtration network.
Each amplifies in transmitting path, and the input of amplifying unit is connected with corresponding input matching circuit, input matching circuit
Input is connected with the output end of corresponding input switch unit.The input of input switch unit and the input of at least one radio frequency
End is connected.Each input matching circuit is connected respectively with the output end of corresponding input switch unit.
It should be noted that each target rejection frequency for amplifying the harmonic filtration network that transmitting path is included, with
The target rejection frequency that remaining amplifies the harmonic filtration network included in transmitting path is different.But, same amplifies transmitting
The target rejection frequency of multiple harmonic filtration networks that path is included is identical.
In practice, multiple output matching circuits and corresponding harmonic filtration networks amplified in paths can be according to actually setting
The difference of meter product, freely decides whether as independent two parts or combines together.According to industry experience, output matching circuit
The situation for having harmonic filtration network concurrently simultaneously is more universal, and the two is often complementary to one another, collaborative work.
In the first embodiment shown in Fig. 4, set towards in the low-frequency range radio-frequency power amplifier of phase3 cell phone platforms
The first amplification transmitting path and second is counted and has amplified transmitting path, wherein the first amplification transmitting path is responsible for band12/
The signal of band13/band14/band17/band28 this five frequency ranges receives and amplifies and launch, and covering frequence is 699-
798MHz；Second amplifies the responsible signal to this five frequency ranges of band5/band8/band20/band26/band27 of transmitting path
Receive and amplify and launch, covering frequence is 814-915MHz.In the first embodiment shown in Fig. 4, first amplifies transmitting path
Including the first input matching circuit 101 shown in Fig. 4, the first amplifying unit 102, the first output matching circuit 103, towards
The triple-frequency harmonics of band17 filters network 104, the first output switching unit 105, control and bias unit 200, input switching list
Unit 300；Second amplifies transmitting path including the second input matching circuit 201, the second amplifying unit 202, second shown in Fig. 4
Output matching circuit 203, the second harmonic towards band8 filter network 204, the second output switching unit 205, control and bias
Unit 200, input switch unit 300 etc..It is so designed that so that band12/band13/band14/band17/band28's is defeated
Go out the second harmonic avoided towards band8 and filter the loss that network is introduced, while band5/band8/band20/band26/
The triple-frequency harmonics that the output of band27 is avoided towards band17 filters the loss that network is introduced, and is conducive to meeting phase3 mobile phones
Platform is for the demand of more high-output power, while also meeting the demand for harmonics restraint.
On the other hand, according to the design principle of F power-like amplifiers, the covering frequency range for amplifying transmitting path by first is needed
f1～f2Second harmonic 2f1～2f2Load impedance be designed as short circuit, while triple-frequency harmonics 3f1～3f2Load impedance design
To open a way, so must assure that 2f2＜ ＜ 3f1.This is accomplished by covering frequency range f for amplifying transmitting path by second3～f4It is secondary
Harmonic wave 2f3～2f4Load impedance be designed as short circuit, while triple-frequency harmonics 3f3～3f4Load impedance be designed as open circuit, so
Must assure that 2f4＜ ＜ 3f3.The relative bandwidth of the radio-frequency power amplifier shown in Fig. 3 isFigure
The relative frequency bandwidth of the radio-frequency power amplifier with two amplification transmitting paths shown in 4 is substantially reduced, respectivelyWithThe design for being more conducive to meet F power-like amplifiers is former
Then, it is also beneficial to meet phase3 cell phone platforms for more high-output power and the demand of lower operating current.
In some common Design of RF Power Amplifier schemes, many times can't by output matching circuit with it is humorous
It is individually designed that ripple filters network.According to the characteristic of passive device, filter network suppresses to be equivalent to outside frequency range in its target
One passive device, therefore can use as the matching element of radio-frequency power amplifier.So under more situations, output
Match circuit merges realization with harmonic filtration network.In the second embodiment shown in Fig. 5, towards phase3 cell phone platforms
Low-frequency range radio-frequency power amplifier first amplification transmitting path pass through output matching circuit (band X harmonic filtration networks)
106, while meeting the first amplification transmitting path to demand of both output matching and harmonic filtration.Similarly, second put
Big transmitting path is by output matching circuit (band Y harmonic filtration networks) 206, while meeting the second amplification transmitting path
To demand of both output matching and harmonic filtration.
It is concrete to introduce below by taking the low-frequency range radio-frequency power amplifier of the phase3 cell phone platforms of Qualcomm's definition as an example
The third embodiment of the present invention.
Front to address, with the proposition of phase2 cell phone platform schemes, radio-frequency front-end module needs covering the whole world various
Frequency range, so big band limits causes obstacle to the realization of F power-like amplifiers.F power-like amplifiers theoretically will
Second harmonic impedance short circuit is asked, and triple-frequency harmonics impedance is opened a way, the wherein triple-frequency harmonics of 699MHz is 2097MHz, and 915MHz
Second harmonic be 1830MHz, the spacing of the two frequencies is so little, and impedance short circuit and impedance open circuit are but realized respectively, if
Meter realizes that difficulty is very big.
In phase3 cell phone platforms defined in Qualcomm, the definition to low-frequency range (low band) part clearly refers to
Go out input signal pin and include two, be respectively designated as LB and LB_700.This definition is clearly by low-frequency range (low band)
Signal is divided into two sections, and the low-band signal higher than 700MHz is exported by the LB pins of transceiver module, amplifies via radio-frequency power
The LB pins of device enter radio-frequency power amplifier, and the low-band signal less than 700MHz and 700MHz is entered from LB_700 pins
Radio-frequency power amplifier.Based on the consideration of above-mentioned each side, input switch unit is eliminated in the 3rd embodiment shown in Fig. 6.
This isolation being designed with beneficial to each amplification transmitting path of raising, and advantageously reduce certain presence for amplifying transmitting path
Impact to the input matching circuit of remaining amplification transmitting path.
Compared with prior art, the radio-frequency power amplifier of support multimode multi-frequency provided by the present invention, can basis
Different frequency range selects optimum amplification transmitting path, and by control and bias unit corresponding amplifying unit and switch unit are controlled
Conducting with close, realize the amplification to the radiofrequency signal of different frequency range, the design of F power-like amplifiers is on the one hand met as far as possible
Principle, takes into account power output and power added efficiency, on the other hand filters each corresponding harmonic wave for amplifying transmitting path, Ke Yiman
The demand of sufficient carrier aggregation technology, and reduce loss of the radiofrequency signal on output channel.
Radio-frequency power amplifier shown in the various embodiments described above can be used in IC chip (such as before radio frequency
End chip) in.For the concrete structure of the radio-frequency power amplifier in the radio frequency front end chip, here is just no longer described in detail one by one
.
In addition, above-mentioned radio-frequency power amplifier can be used in communication terminal, as the important composition of radio circuit
Part.Communication terminal mentioned here is referred to can support GSM, EDGE, TD_SCDMA, TDD_ used in mobile environment
The computer equipment of various communication standards such as LTE, FDD_LTE, including mobile phone, notebook computer, panel computer, vehicle mounted electric
Brain etc..Additionally, technical scheme provided by the present invention is also applied for the occasion of other radio circuit applications, such as communication base station
Deng.Can be on the premise of introducing compared with low insertion loss, effectively using the IC chip and communication terminal of the technical scheme
Realize harmonic restraining function.
The radio-frequency power amplifier for supporting multimode multi-frequency provided by the present invention, chip and communication terminal are carried out above
Detailed description.For one of ordinary skill in the art, it is done on the premise of without departing substantially from true spirit
Any obvious change, all will constitute to infringement of patent right of the present invention, corresponding legal liabilities will be undertaken.
Claims (12)
1. a kind of radio-frequency power amplifier for supporting multimode multi-frequency, it is characterised in that including control and bias unit, at least two
Amplify transmitting path, the control and bias unit are connected respectively with each amplification transmitting path；
The control and bias unit control corresponding amplification transmitting path and are on shape according to the frequency range of input radio frequency signal
State, and it is closed remaining transmitting path.
2. radio-frequency power amplifier as claimed in claim 1, it is characterised in that：
Each amplify transmitting path in, including the input matching circuit, amplifying unit, output matching circuit being linked in sequence,
Harmonic filtration network and output switching unit.
3. radio-frequency power amplifier as claimed in claim 2, it is characterised in that：
The output end of the output switching unit is by multiple switches for being independently connected and disconnecting and corresponding radio-frequency transmissions road
Footpath is connected；
The control and bias unit control the output switching unit, select corresponding radio-frequency transmissions outlet openings radio frequency letter
Number.
4. radio-frequency power amplifier as claimed in claim 2 or claim 3, it is characterised in that：
The output switching unit includes at least one common port, the common port and the output matching circuit and the harmonic wave
Filter network to be connected.
5. radio-frequency power amplifier as claimed in claim 2, it is characterised in that also including input switch unit；
The each input matching circuit amplified in transmitting path of output end connection of the input switch unit, for according to institute
Control and the control of bias unit are stated, selects corresponding rf inputs to receive radiofrequency signal.
6. radio-frequency power amplifier as claimed in claim 5, it is characterised in that in phase3 cell phone platforms, work as input signal
When pin includes LB and LB_700, the input switch unit is omitted.
7. radio-frequency power amplifier as claimed in claim 2, it is characterised in that：
The input of the amplifying unit and corresponding input matching circuit are connected, the input of the input matching circuit with it is right
The output end of the input switch unit answered is connected, the input and at least one rf inputs phase of the input switch unit
Even.
8. radio-frequency power amplifier as claimed in claim 2, it is characterised in that：
The output matching circuit combines together with the harmonic filtration network.
9. radio-frequency power amplifier as claimed in claim 1 or 2, it is characterised in that：
In each target rejection frequency for amplifying the harmonic filtration network that transmitting path is included, with remaining amplification transmitting path
Comprising harmonic filtration network target rejection frequency it is different；
Same amplify transmitting path in, comprising multiple harmonic filtration networks target rejection frequency it is identical.
10. radio-frequency power amplifier as claimed in claim 1 or 2, it is characterised in that：
Amplify in transmitting path at each, the load impedance for covering the second harmonic of frequency range is designed as short circuit, triple-frequency harmonics
Load impedance be designed as open circuit.
11. a kind of IC chips, it is characterised in that include in the IC chip in claim 1～10 arbitrarily
Radio-frequency power amplifier described in one.
12. a kind of communication terminals, it is characterised in that include in the communication terminal in claim 1～10 described in any one
Radio-frequency power amplifier.
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| CN201611268929.8A CN106656076B (en) | 2016-12-31 | 2016-12-31 | Radio frequency power amplifier, chip and communication terminal supporting multimode and multifrequency |
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Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
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| CN107453713A (en) * | 2017-07-12 | 2017-12-08 | 杭州电子科技大学 | A kind of power amplifier for improving grid source ghost effect |
| CN107483025B (en) * | 2017-07-12 | 2021-01-26 | 杭州电子科技大学 | class-F power amplifier based on novel harmonic control network |
| WO2019015667A1 (en) * | 2017-07-21 | 2019-01-24 | 华为技术有限公司 | Power amplifier |
| CN107425814A (en) * | 2017-08-07 | 2017-12-01 | 杭州电子科技大学 | A kind of broadband Doherty power amplifier based on compensation parasitic capacitance |
| CN107425814B (en) * | 2017-08-07 | 2021-01-29 | 杭州电子科技大学 | Broadband Doherty power amplifier based on compensation parasitic capacitance |
| CN107508560A (en) * | 2017-08-11 | 2017-12-22 | 杭州电子科技大学 | A kind of Doherty power amplifier and its implementation for strengthening bandwidth performance |
| CN107508560B (en) * | 2017-08-11 | 2021-01-26 | 杭州电子科技大学 | Doherty power amplifier for enhancing bandwidth performance and implementation method thereof |
| CN109787569A (en) * | 2017-11-14 | 2019-05-21 | 锐迪科微电子科技（上海）有限公司 | A kind of multimode multi-frequency radio frequency power amplifier |
| CN109787569B (en) * | 2017-11-14 | 2023-08-01 | 锐迪科微电子科技（上海）有限公司 | Multimode multifrequency radio frequency power amplifier |
| CN109842380A (en) * | 2017-11-28 | 2019-06-04 | 锐迪科微电子（上海）有限公司 | A kind of power amplification circuit for realizing HPUE |
| WO2019179488A1 (en) * | 2018-03-22 | 2019-09-26 | 上海唯捷创芯电子技术有限公司 | Multimode and multi-frequency radio frequency front end module, chip, and communication terminal |
| CN108377151A (en) * | 2018-03-22 | 2018-08-07 | 上海唯捷创芯电子技术有限公司 | A kind of multimode multi-frequency radio frequency front-end module, chip and communication terminal |
| CN108377151B (en) * | 2018-03-22 | 2019-11-08 | 上海唯捷创芯电子技术有限公司 | A kind of multimode multi-frequency radio frequency front-end module, chip and communication terminal |
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| CN108400774A (en) * | 2018-03-22 | 2018-08-14 | 上海唯捷创芯电子技术有限公司 | A kind of balanced type radio-frequency power amplifier, chip and communication terminal |
| CN113659933A (en) * | 2020-05-12 | 2021-11-16 | 瑞昱半导体股份有限公司 | Signal output circuit with anti-interference mechanism and method |
| CN113659933B (en) * | 2020-05-12 | 2024-04-02 | 瑞昱半导体股份有限公司 | Signal output circuit with anti-interference mechanism and method |
| WO2023040472A1 (en) * | 2021-09-17 | 2023-03-23 | 深圳飞骧科技股份有限公司 | Coupling circuit and electronic device for 4g full-band power amplifier |
| CN115913126A (en) * | 2022-11-28 | 2023-04-04 | 锐磐微电子科技(上海)有限公司 | Radio frequency power amplifier and radio frequency front end module |
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