CN106601610A - Method for developing small pitch fin - Google Patents
Method for developing small pitch fin Download PDFInfo
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- CN106601610A CN106601610A CN201510663088.XA CN201510663088A CN106601610A CN 106601610 A CN106601610 A CN 106601610A CN 201510663088 A CN201510663088 A CN 201510663088A CN 106601610 A CN106601610 A CN 106601610A
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- mask layer
- side wall
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- 238000000034 method Methods 0.000 title claims abstract description 80
- 238000005530 etching Methods 0.000 claims abstract description 87
- 239000000463 material Substances 0.000 claims abstract description 85
- 239000000758 substrate Substances 0.000 claims abstract description 44
- 239000010408 film Substances 0.000 claims description 20
- 230000015572 biosynthetic process Effects 0.000 claims description 18
- 238000001259 photo etching Methods 0.000 claims description 17
- 238000005520 cutting process Methods 0.000 claims description 14
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 5
- 238000010894 electron beam technology Methods 0.000 claims description 5
- 229920005591 polysilicon Polymers 0.000 claims description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 4
- 239000013039 cover film Substances 0.000 claims description 3
- 238000003475 lamination Methods 0.000 claims description 3
- 238000005516 engineering process Methods 0.000 abstract description 18
- 238000003384 imaging method Methods 0.000 abstract description 9
- 238000001459 lithography Methods 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 228
- 238000007254 oxidation reaction Methods 0.000 description 21
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 20
- 230000003647 oxidation Effects 0.000 description 19
- 229910052710 silicon Inorganic materials 0.000 description 13
- 239000010703 silicon Substances 0.000 description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 12
- 229920002120 photoresistant polymer Polymers 0.000 description 9
- 239000000377 silicon dioxide Substances 0.000 description 9
- 235000012239 silicon dioxide Nutrition 0.000 description 9
- 229910052581 Si3N4 Inorganic materials 0.000 description 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 8
- 238000000151 deposition Methods 0.000 description 7
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 6
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- 238000012546 transfer Methods 0.000 description 6
- 239000012212 insulator Substances 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 229910052732 germanium Inorganic materials 0.000 description 4
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 4
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 238000004528 spin coating Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000004380 ashing Methods 0.000 description 2
- 230000009977 dual effect Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000000671 immersion lithography Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
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- 238000001039 wet etching Methods 0.000 description 2
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910003978 SiClx Inorganic materials 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- HIVGXUNKSAJJDN-UHFFFAOYSA-N [Si].[P] Chemical compound [Si].[P] HIVGXUNKSAJJDN-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
- H01L21/3083—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/3086—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
- H01L21/3083—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/3088—Process specially adapted to improve the resolution of the mask
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
Abstract
The invention provides a method for developing a small pitch fin, comprising the following steps: providing a substrate on which a first mask layer and a second mask layer figure are arranged in sequence; developing auxiliary parts with different etching rates within the side face of the second mask layer figure; removing the materials on the first mask layer and on the parts except the auxiliary parts; developing a first side wall on the side wall of the auxiliary parts; using the first side wall as the mask for etching until the substrate except the first side wall is exposed to form a first mask layer figure; and developing a second side wall on the side wall of the first mask layer figure; and using the second side wall as the mask for etching to obtain a fin body. According to the method of the invention, auxiliary parts with different etching rates are developed within the side face of the second mask layer figure, which means that through this step, the spacing between the side walls of the second mask layer figure formed in a commonly used lithography technology is reduced, and then through a multi-self-aligning imaging method, a small pitch fin is formed.
Description
Technical field
The present invention relates to field of semiconductor manufacture, more particularly to a kind of method for forming Small Distance fin body.
Background technology
With the continuous development of integrated circuit technology, the channel length of device constantly shortens, appearance
Short-channel effect causes the electric property of device constantly to deteriorate.Intel is introduced in 22nm technology nodes
The three-dimensional device architecture of fin formula field effect transistor (Fin-FET), it is made using several surfaces of thin fin
For raceway groove, such that it is able to prevent the short-channel effect in conventional transistor.
In the manufacture process of semiconductor device, the diminution of design rule and pattern-pitch often starts challenge
The resolution accuracy of rule lithographic equipment, in fact, the resolution required by the design rule for currently using
Precision has been over the precision that some common process equipment can be provided.For example, suitably forming
In the common process of the Small Distance pattern of about 50nm, it usually needs using ArF immersion lithography skills
Art.Technique is using the ArF light sources with 193nm wavelength, and used in traditional handicraft is
The KrF light sources of the longer wavelength with 248nm, thus manufacture can be increased due to needing replacing light source
Cost.Therefore, in actual manufacture, it is still necessary to using the light using the light source with longer wavelength
Lithography, for example, using the light source formed by the KrF excimer lasers with 248nm wavelength
Photoetching technique, however, technique is not suitable for forming the pattern for being smaller than 50nm.Additionally,
The photoetching technique of the F2 excimer lasers of the shorter wavelength with 153nm, but this can also be utilized
Item technology is improved not enough so that being difficult to form pattern in the semiconductor substrate.
In order to solve the above problems, prior art starts using dual imaging method and/or side wall transfer skill
Art forms small size fin body, for example, controls the size of fin body by the thickness of the side wall of control formation.
The easily prepared small size fin body of the method, but affected by the resolution accuracy of lithographic equipment, it is impossible to
Prepare the pattern that fin body is smaller than 30nm.As technique node constantly diminishes, for example, for
How 7nm technique nodes, prepare and be smaller than the Small Distance fin body of 30nm and become urgently to be resolved hurrily
Problem.
The content of the invention
The invention provides a kind of method for forming Small Distance fin body, to solve to be difficult to prepare in prior art
Go out to be smaller than the technical problem of the Small Distance fin body of 30nm.
The invention provides a kind of method for forming Small Distance fin body, including：
Substrate is provided, the first mask layer, the second mask layer pattern on the substrate, has been sequentially formed；
The different slave part of etch rate is formed within the second mask layer pattern side, and is gone
Except the material on first mask layer, in addition to the slave part；
The first side wall is formed in the side wall of the slave part, and is carried out as mask with first side wall
Etching forms the first mask layer pattern up to the substrate outside exposure first side wall；
The second side wall is formed in the side wall of the first mask layer pattern, and with second side wall to cover
Film performs etching acquisition fin body.
Preferably, forming the second mask layer figure includes：
The second mask layer is formed on first mask layer；
Hard mask layer is formed on second mask layer；
Photoetching is carried out, litho pattern is defined；
The litho pattern is split by electron beam exposure, formed and the second mask layer figure
Shape identical litho pattern；
Perform etching, until forming the second mask layer pattern；
Remove all layers on the second mask layer pattern.
Preferably, the material of the second mask layer pattern include it is following any one：It is polysilicon, non-
Crystal silicon and its lamination.
Preferably, it is described that different auxiliary of etch rate is formed within the second mask layer pattern side
Part, and the material removed on first mask layer, outside the slave part is helped to include：
Aoxidized, until different auxiliary of etch rate is formed within the second mask layer pattern side
Help part；
Remove the material on first mask layer, outside the slave part.
Preferably, the selection of the material of the second mask layer pattern and the material of first mask layer
Etching ratio >=5:1.
Preferably, it is described that different auxiliary of etch rate is formed within the second mask layer pattern side
Part, and the material removed on first mask layer, outside the slave part is helped to include：
Carry out the second mask layer pattern after isotropic etching formation is cut out；
Deposit the selective etching ratio≤5 with the second mask layer graphic material after described cutting out:1 auxiliary is covered
Film layer；
Carry out anisotropic etching and form the slave part；
Remove the material on first mask layer, outside the slave part.
Preferably, it is described remove on first mask layer, the material bag outside the slave part
Include：
With with the slave part material selective etching ratio >=5:1 material filling groove；
Carry out planarizing until the etch rate formed at the top of removal the second mask layer pattern is different
Part；
Perform etching on removal first mask layer, the material outside the slave part.
Preferably, it is to form fin body critical size Fin CD for a, fin body spacing critical size Space CD
For the Small Distance fin body of b, the second mask layer graphic width is 6a+5b, second mask layer
Pattern pitch is 2a+3b, and the slave part width is 2a+b, and the thickness of first side wall is b,
The thickness of second side wall is a.
Preferably, the litho pattern width is n times of the second mask layer graphic width and (n-1) times institute
The second mask layer pattern pitch sum is stated, wherein, n is >=2 positive integer.
Preferably, the second mask layer graphic width afterwards of cutting out is 2a+3b.
The invention provides it is a kind of formed Small Distance fin body method, be formed with the first mask layer, second
On the substrate of mask layer pattern, by forming etch rate within the second mask layer pattern side
Different slave parts, and the material on first mask layer, outside the slave part is removed,
The spacing being smaller than between traditional side wall transfer techniques formation side wall of the slave part, then in institute
The side wall for stating slave part forms the first side wall, and performed etching with first side wall as mask until
The substrate outside first side wall is exposed, the first mask layer pattern is formed, then, described
The side wall of the first mask layer pattern forms the second side wall, and is performed etching with second side wall as mask
Obtain fin body.As the method forms etch rate difference within the second mask layer pattern side
Slave part, the step can be passed through and reduce the side that conventional photoetching technique forms the second mask layer pattern
Spacing between wall, then forms Small Distance fin body by multiple autoregistration imaging method.
Additionally, the method additionally provides to form fin body critical size Fin CD for a, fin body spacing key
Design parameters of the size Space CD for the Small Distance fin body of b.
Description of the drawings
In order to be illustrated more clearly that the embodiment of the present application or technical scheme of the prior art, below will be to implementing
Accompanying drawing to be used needed for example is briefly described, it should be apparent that, drawings in the following description are only
Some embodiments described in the present invention, for those of ordinary skill in the art, can be with according to these
Accompanying drawing obtains other accompanying drawings.
Figure 1A to Fig. 1 E is a kind of device cross section structure of Small Distance pattern preparation process in prior art
Schematic diagram；
Fig. 2 is the flow chart according to the method for forming Small Distance fin body provided in an embodiment of the present invention；
Fig. 3 A to Fig. 3 O are the process of the formation Small Distance fin body provided according to the embodiment of the present invention one
Device cross section structure schematic diagram；
Fig. 4 A to Fig. 4 C are the device during the formation slave part provided according to the embodiment of the present invention three
Part cross section structure schematic diagram.
Specific embodiment
Embodiments of the invention are described below in detail, the example of the embodiment is shown in the drawings, its
In from start to finish same or similar label represent same or similar element or have same or like work(
The element of energy.It is exemplary below with reference to the embodiment of Description of Drawings, is only used for explaining this
It is bright, and be not construed as limiting the claims.
Additionally, the present invention can in different examples repeat reference numerals and/or letter.This repetition is
For purposes of simplicity and clarity, between itself not indicating discussed various embodiments and/or arranging
Relation.Additionally, the invention provides various specific technique and material example, but this area
Those of ordinary skill can be appreciated that the use of the applicable property and/or other materials of other techniques.Separately
Outward, fisrt feature described below second feature it " on " structure can be including first and second special
Levy the embodiment for being formed as directly contact, it is also possible to first and second are formed in including other feature special
Embodiment between levying, such first and second feature may not be directly contact.
For a better understanding of the present invention, side first below to forming Small Distance Fin in prior art
Method carries out brief introduction.
Illustrate next, with reference to Figure 1A to 1E according to prior art by using dual imaging method
Method to form Small Distance pattern.Figure 1A to 1E shows the device of the method according to prior art
Part cross section structure schematic diagram.
First, there is provided device architecture as shown in Figure 1A, the device architecture include substrate 100
And sequentially form the understructure 102 that will form Small Distance pattern wherein on the substrate 100,
First hard mask layer 103, the second hard mask layer 104, the first bottom anti-reflection layer (BARC) 105A and
The first photoresist layer 106A with the first patterns of openings.
Then, using the first photoresist layer 106A as mask, etch the first bottom anti-reflection layer
105A and the second hard mask layer 104, until expose the surface of the first hard mask layer 103, so as to by institute
State the first patterns of openings and be transferred to the second hard mask layer 104, and afterwards by plasma ashing
Reason removes photoresist layer 106A and the first bottom anti-reflection layer 105A, obtains such as institute in Figure 1B
The cross-section structure for showing.
Then, as is shown in fig. 1 c, in the surface of the first hard mask layer 103 and the second hard mask layer
The second bottom anti-reflection layer 105B is formed by spin-coating method on 104 surface and there is the second patterns of openings
The second photoresist layer 106B.Then, covered with the second photoresist layer 106B and second firmly
Film layer 104 etches the second bottom anti-reflection layer 105B and the first hard mask layer 103, directly as mask
To the surface for exposing understructure 102.Afterwards, photoresist is removed by plasma ashing process
Oxidant layer 106B and the second bottom anti-reflection layer 105B, so as to obtain section knot as shown in Figure 1 D
Structure.
Finally, using the first hard mask layer 103 and the second hard mask layer 104 as mask, etch lower floor
Structure 102, until expose the surface of substrate 100, it is described little so as to be formed in understructure 102
Pitch pattern, as shown in fig. 1e.The Small Distance pattern reality be can be seen that from whole manufacturing process
It is the superposition of the first patterns of openings and the second patterns of openings on border.
However, being formed in the method for Small Distance pattern according to prior art above-mentioned, photoresist layer
Bottom sectional presented due to the uneven surface of the bottom anti-reflection layer between two adjacent patterns
Rugged pattern, so as to the crucial chi of the pattern that formation is subsequently etched in hard mask layer can be affected
Very little (CD).Be additionally, since in final etch understructure 102, a part of region use by
The hard mask of bilayer that first hard mask layer 103 and the second hard mask layer 104 are constituted, and another part area
Domain uses the hard mask of monolayer being made up of the first hard mask layer 103, so that mask is in each area
It is highly inconsistent in domain, as shown in Figure 1 D, and then also result in last in understructure 102
The pattern of middle formation it is highly inconsistent.Additionally, being needed through light twice according to the method for prior art
Carve and three etchings could form Small Distance pattern in understructure 102, and Twi-lithography needs
Using two pieces of mask plates with different openings pattern, thus substantially increase manufacturing cost.
The method of a kind of formation Small Distance fin body that the present invention is provided, by the second mask layer figure
Form the different slave part of etch rate within shape side, and remove on first mask layer,
Material outside the slave part, is smaller than traditional side wall transfer techniques due to the slave part
Spacing between the side wall that the second mask layer pattern side is formed, it is then multiple by autoregistration
Imaging method forms Small Distance fin body, can adopt conventional lithographic equipment by the method, for example,
Between being prepared using the photoetching technique of the light source formed by the KrF excimer lasers with 248nm wavelength
Away from the Small Distance fin body less than 30nm.
The method is described in detail below with reference to specific embodiment, such as Fig. 2 to Fig. 4 C institutes
Show.
In the present invention, the substrate 100 can be Semiconductor substrate, such as：Si substrates, Ge substrates,
SiGe substrate, SOI (silicon-on-insulator, Silicon On Insulator) or GOI (germanium on insulator,
Germanium On Insulator) etc..In other embodiments, the Semiconductor substrate 100 can also be
Including other elements quasiconductor or the substrate of compound semiconductor, such as GaAs, InP or SiC etc.,
Can also be laminated construction, such as Si/SiGe etc. can also be other epitaxial structures, such as SGOI
(silicon germanium on insulator) etc..The thickness of the second mask layer pattern 1112 is more than slave part 1104
Width.
Embodiment one
In the present embodiment, the substrate 100 is silicon substrate, is covered described second by oxidation technology
The different slave part 1104 of etch rate, the Small Distance are formed within 1112 side of film layer figure
The a of fin body is equal to 5nm, and the b of the Small Distance fin body is equal to 25nm.It is a kind of to form Small Distance fin body
Method, as shown in Fig. 2 including：
Step S01, there is provided substrate 100, sequentially formed on the substrate 100 first mask layer 1101,
Second mask layer pattern 1112, as shown in Fig. 3 A to Fig. 3 C.
In the present embodiment, first mask layer 1101 can be silicon dioxide, silicon nitride, phosphorus silicon
Glass (PSG), boron-phosphorosilicate glass (BPSG) etc. are by works such as chemical vapour deposition techniques (CVD)
Skill is realized；Can also be low-k dielectric layer, for example, carbon oxide (Carbon Doped Oxide,
CDO) layer etc.；It can certainly be the metallic film that there is larger selective etching ratio with silicon substrate etc..Institute
The material for stating the second mask layer pattern 1112 includes but is not limited to the energy such as polysilicon, non-crystalline silicon and its lamination
The material of certain thickness oxide layer is formed by oxidation technology.
The second mask layer pattern 1112 can be by depositing the second mask layer 1102, such as Fig. 3 A institutes
Show, the second mask layer pattern 1112 is defined by conventional photoetching process etc. then, etching shape is then passed through
Into the second mask layer pattern 1112.It should be noted that the second mask layer pattern in order to improve formation
1112 quality, can deposit a hard mask layer 1103 on second mask layer 1102, first
First pass through conventional photoetching process the second mask layer pattern 1112 is defined on the hard mask layer 1103,
As shown in Figure 3 B, then performed etching with the hard mask layer 1103 as mask, to form the second mask
Layer pattern 1112, as shown in Figure 3 C.Wherein, second mask layer 1102 can be by chemistry
The polysilicon of the formation such as vapour deposition process CVD, physical vaporous deposition PVD, non-crystalline silicon and its folded
Layer；The hard mask layer 1103 includes but is not limited to the conventional hard masks such as silicon dioxide, silicon nitride
Layer material.The conventional photoetching process can be using by the KrF excimer laser with 248nm wavelength
The light source that device is formed, forms pattern by immersion lithography technology.Wherein, the light that photoetching process is adopted
Resistance layer can include：Top anti-reflective layer and/or bottom anti-reflection layer and photoresist layer.
It should be noted that it is described to obtain to carry out photoetching by the light source with longer wavelength
Second mask layer pattern, forming the second mask layer figure includes：On first mask layer
Form the second mask layer；Hard mask layer is formed on second mask layer；Photoetching is carried out, is defined
Litho pattern；The litho pattern is split by electron beam exposure, formation is covered with described second
Film layer figure identical litho pattern；Perform etching, until forming the second mask layer pattern；Go
Except all layers on the second mask layer pattern.Wherein, the litho pattern width is n times second
Mask layer graphic width and (n-1) the second mask layer pattern pitch sum again, n is >=2 just
Integer.For example, carry out being lithographically formed pattern of the width as 635nm with the light source of 500nm wavelength, so
It is 155nm that the width is divided into 3 width for the pattern of 635nm by electron beam exposure afterwards, and
Pattern (not shown) of the spacing for 85nm, the advantage of formation the second mask layer patterning step is：
In prior art, most of lithographic equipments cause these photoetching to set due to the reason such as the wavelength of light source is longer
Standby precision etc. can not meet the device of small size features and prepare, when possessing this kind of photoetching of electron beam exposure
High precision but during the low equipment of efficiency, just can be matched somebody with somebody using high precision lithographic using above-mentioned steps
Close the relatively low lithographic equipment of these precision, with higher efficiency system for small size features device, here
It is not especially limited.
In a specific embodiment, on a silicon substrate by plasma enhanced chemical vapor deposition method
PECVD deposits 50nm thick silicon dioxides thin film as the first mask layer 1101, then using CVD
Method deposits 100nm thick polysilicons thin film as the second mask layer 1102, is then deposited using PECVD
Then 30nm thick silicon nitrides thin film forms bottom anti-reflection layer (not shown as hard mask layer 1103
Go out) and spin coating photoresist layer, photoetching process, etching technics are passed through with 248nm wavelength light sources then
The position of the second mask layer pattern 1112 defined in hard mask layer 1103, and with the hard mask
Layer 1103 is performed etching for mask, forms the second mask layer pattern 1112 in second mask layer 1102
In, wherein, the size of the second mask layer pattern 1112 is 155nm.
Step S02, forms etch rate different within 1112 side of the second mask layer pattern
Slave part 1104, and remove on first mask layer 1101, the slave part 1104 it
Outer material, as shown in Fig. 3 D to Fig. 3 G.
In the present embodiment, it is described that etching speed is formed within 1112 side of the second mask layer pattern
The different slave part 1104 of rate, and remove on first mask layer 1101, the assisted parts
The material divided outside 1104 includes：Aoxidized, until 1112 side of the second mask layer pattern
Within form the different slave part 1104 of etch rate, as shown in Figure 3 D；Remove described first to cover
Material on film layer 1101, outside the slave part 1104.Wherein, it is described to remove described the
Material on one mask layer 1101, outside the slave part 1104 includes：With with the auxiliary
1104 material selective etching ratio >=5 of part:1 material filling groove, as shown in FIGURE 3 E；Carry out flat
Change until remove the different part of the etch rate formed at the top of the second mask layer pattern 1112, such as
Shown in Fig. 3 F；Perform etching on removal first mask layer 1101, the slave part 1104
Outside material, as shown in Figure 3 G.The present embodiment is by oxidation technology in the second mask layer pattern
Certain thickness slave part 1104 is formed within 1112 side wall, the slave part 1104 is due to shape
Into within the wall of side, spacing of the prior art between the side wall that pattern side wall is formed can be effectively reduced,
So that reducing the distance between fin body 1114 for ultimately forming；And oxidation technology is ripe, and controllable
Property preferably, the time for needing oxidation can be calculated according to the oxidation rate of concrete oxidation technology, and
Silicon dioxide is the presence of obvious interface between transparency, with silicon, is easy to observe actual oxidation depth
Degree, to realize On-line self-diagnosis.
In actual applications, the oxidation can be wet oxidation and/or dry oxidation, in order to ensure most
End form into fin body 1114 can be equally spaced, unify to be formed width for 2a+b nm by oxidation technology
The slave part 1104.
In a specific embodiment, described to be oxidized to dry oxidation, the dry oxidation technique includes：
The process gas of dry oxidation is oxygen, and oxidizing temperature is 850-1200 DEG C.For example, work as measure
When the oxidation rate for obtaining the oxidation technology is 8 angstrom min, according to predetermined slave part 1104
Width is 2a+b=35nm, sets oxidization time as 44 minutes, and certainly, the oxidization time can be with root
It is adjusted according to actual effect；35nm thick two is formed within 1112 surface of the second mask layer pattern
Silicon oxide layer, is subsequently filled in groove of the non-crystalline silicon between the second mask layer pattern 1112, such as schemes
Shown in 3E；Then pass through CMP to be planarized, until the second not oxidized mask of exposure
Layer pattern 1112；Eventually through wet etching, carved for example with Tetramethylammonium hydroxide TMAH
Erosion, removes on first mask layer 1101, the non-crystalline silicon material outside the slave part 1104
Material.
It should be noted that the oxidation technology can be repeatedly/single oxidation technology, when test finds
When the silicon dioxide thickness of formation is less than 35nm, silicon dioxide can be adjusted by multiple oxidation technology
Thickness.
Step S03, forms the first side wall 1105 in the side wall of the slave part 1104, and with described
First side wall 1105 is performed etching for mask until exposing the lining outside first side wall 1105
Bottom 100, forms the first mask layer pattern 1111, as shown in Fig. 3 H to Fig. 3 K.
In the present invention, 1105 material of the first side wall should be with 1104 material of the slave part
Selective etching ratio≤5:1, in order to reduce to first when the slave part 1104 is subsequently removed
The impact of side wall 1105, and 1105 material of the first side wall should be with first mask layer 1101
The selective etching ratio≤5 of material:1 so that first side wall 1105 can be covered in etching described first
As hard mask during film layer 1101.Specifically, 1105 material of the first side wall, the first mask layer
1101 materials include but is not limited to silicon dioxide, silicon nitride, carborundum, indefinite form carbon, the nitrogen of carbon dope
SiClx, silicon oxynitride and other oxides etc. meet the material of above-mentioned selective etching ratio.For being formed
The technique of the first side wall 1105 be it is known in the art that and generally include deposition and etch process step,
As shown in Fig. 3 H to Fig. 3 I.Then, performed etching with first side wall 1105 as mask until sudden and violent
Reveal the substrate 100 outside first side wall 1105, form the first mask layer pattern 1111, such as
Shown in Fig. 3 J to Fig. 3 K.
In actual applications, as the slave part 1104 is not existed with first mask layer 1101
Same level height, i.e. some places need etching depth for 1104 thickness of slave part and the first mask
1101 thickness sum of layer, and some places need etching depth for 1101 thickness of the first mask layer, are
Guarantee slave part 1104 and its lower first mask layer 1101 are removed clean, and may cause non-auxiliary
The first mask layer 1101 helped under part is by over etching；Therefore, when 1104 material of the slave part
When there is larger selective etching ratio with first mask material in material, it is preferred to use step etching method,
Slave part 1104 is first removed, is then mask to first mask layer with the first side wall 1105 again
1101 perform etching；When 1104 material of the slave part and the selection of first mask material
Etching ratio is approximate or be 1：When 1, can first so that there is identical or phase with 1104 material of slave part
Like the groove between material first side wall 1105 of filling of selective etching ratio, even curface (figure is formed
It is not shown), then perform etching again until exposing the substrate outside first side wall 1105
100, the first mask layer pattern 1111 is formed, etching quality is improved.
In a specific embodiment, by the silicon nitride film that PECVD deposit thickness is 25nm,
As shown in figure 3h, it is in practical application, thin due to what is grown at film thickness and the plane of side-walls growth
Can there is certain drift value in film thickness, needs are adjusted according to practical situations so that side wall
The thickness of the silicon nitride film at place is 25nm；Anisotropic etching is carried out until forming the first side wall 1105,
As shown in fig. 31；Then flat surface (not shown) is formed by spin coating COD；Then carry out
Etching is until the substrate 100 outside exposure first side wall 1105, as shown in figure 3j, forms
First mask layer pattern 1111.
It should be noted that after forming the first mask layer pattern 1111, first side can be removed
Wall 1105, it is also possible to first side wall 1105 is removed in subsequent step, here does not do particular determination.
Step S04, forms the second side wall 1113 in the side wall of the first mask layer pattern 1111, and
Acquisition fin body 1114 is performed etching by mask of second side wall 1113, such as Fig. 3 L to Fig. 3 O institutes
Show.
In the present embodiment, the selection of 1113 material of the second side wall and first mask material
Etching ratio≤5:1, to reduce in the first mask layer pattern 1111 of follow-up removal to second side wall
1113 impact.
In actual applications, due to the first mask layer pattern 1111 with 100 surface of the substrate not
Same level height, i.e., some places need etching depth for 1111 thickness of the first mask layer pattern with
And the height sum of fin body 1114, and some places need etching depth for the first mask layer 1101 it is thick
Degree, in order to the high uniformity of the fin body 1114 for ensureing to ultimately form it is consistent；Therefore, when described first covers
When there is larger selective etching ratio with the backing material in 1111 material of film layer figure, it is preferred to use substep
Etching method, first removes the first mask layer pattern 1111, then again with the second side wall 1113 as mask pair
The substrate 100 is performed etching；When 1111 material of the first mask layer pattern and the backing material
Selective etching ratio be approximately 1 or for 1 when, can first with 1111 material of the first mask layer pattern
Material with same or similar selective etching ratio fills the groove between the second side wall 1113, forms flat
Whole surface, then performs etching again until forming the fin body 1114 of certain altitude.
In a specific embodiment, by PECVD cvd nitride silicon thin film so that first
The side wall of mask layer pattern 1111 forms silicon nitride film of the thickness for 5nm, as shown in figure 3l；So
The second side wall 1113 is formed in 1111 side wall of the first mask layer pattern by anisotropic etching afterwards,
As shown in fig.3m；Then the first mask layer pattern 1111 is removed with the solution containing Fluohydric acid.,
As shown in Fig. 3 N；Acquisition fin is performed etching as mask with second side wall 1113 to silicon substrate finally
Body 1114, as shown in Fig. 3 O.
So far, fin body critical size Fin CD have been formed for 5nm, fin body spacing critical size Space
CD is 25nm, in the Small Distance fin body of 1112 position of the second mask layer pattern.Further,
In order to all form Small Distance fin body in whole substrate surface, between the second mask layer pattern 1112
Spacing is 85nm.
In embodiments of the present invention, the first mask layer 1101, the second mask layer pattern 1112 are being formed with
Substrate 100 on, by forming etch rate not within 1112 side of the second mask layer pattern
With slave part 1104 simultaneously remove redundance, the slave part 1104 is smaller than traditional side
Wall transfer techniques form the spacing between side wall, then obtain fin body according to autoregistration multiple imaging
1114.As the method forms etch rate difference within 1112 side of the second mask layer pattern
Slave part 1104, conventional photoetching technique can be reduced by the step and form the second mask layer pattern
Spacing between 1112 side wall, can effectively reduce existing self-aligned technology and form the distance between side wall,
Then fin body critical size Fin CD are formed for 5nm by multiple autoregistration imaging method, fin body spacing
Small Distance fin bodies of the critical size Space CD for 25nm.
Embodiment two
A kind of method for forming Small Distance fin body, as described in embodiment one, except that, in this reality
Apply in example, the second mask layer figure after etching the second mask layer pattern 1112 described in cutting to form cutting
Shape, it is 2a+b then to form thickness by deposition and etching technics at cutting, and is covered with described second
1112 material selective etching ratio≤5 of film layer figure:1 slave part 1104, fin body critical size Fin
CD is 15, and fin body spacing critical size Space CD are 15 Small Distance fin body.
A kind of method for forming Small Distance fin body includes：
Step S21, there is provided substrate 100, sequentially formed on the substrate 100 first mask layer 1101,
Second mask layer pattern 1112, with reference to shown in Fig. 3 A to Fig. 3 C.
In the present embodiment, the substrate 100 be germanium substrate, the material of first mask layer 1101
For silicon dioxide；Light of the width as 645nm is formed by conventional photoetching process with 500nm wavelength light sources
Then the litho pattern is equidistantly split by needle drawing shape (not shown) by electron beam lithography
3 sizes litho pattern equivalently-sized with the second mask layer pattern 1112 is formed, and by carving
Etching technique forms the second mask layer pattern 1112, and 1112 size of the second mask layer pattern is
6a+5b=165nm, 1112 spacing of the second mask layer pattern are 2a+3b=75nm.
Step S22, forms etch rate different within 1112 side of the second mask layer pattern
Slave part 1104, as shown in Fig. 4 A to Fig. 4 C, and remove on first mask layer 1101,
Material outside the slave part 1104, with reference to shown in Fig. 3 E to Fig. 3 G.
In the present embodiment, the material of the second mask layer pattern 1112 and first mask layer
The selective etching ratio >=5 of 1101 material:1, it is described 1112 side of the second mask layer pattern it
It is interior to form the different slave part 1104 of etch rate, and remove on first mask layer 1101,
Material outside the slave part 1104 includes：Carry out isotropic etching formed cut out after second cover
Film layer figure 1112 '；Deposit the selective etching with 1112 ' material of the second mask layer pattern after described cutting out
Than≤5:1 auxiliary mask layer；Carry out anisotropic etching and form the slave part 1104；Remove
Material on first mask layer 1101, outside the slave part 1104.Wherein, it is described
Remove the same embodiment of material on first mask layer 1101, outside the slave part 1104
One.The present embodiment cuts out the second mask layer pattern 1112 by etching, forms width for 2a+3b
Cut out after the second mask layer pattern 1112 ', as shown in Figure 4 A, then 100 surface of substrate deposit
With the selective etching ratio≤5 of 1112 ' material of the second mask layer pattern after described cutting out:1, and cover second
Auxiliary mask layer of the monolateral formation thickness of 1112 side wall of film layer figure for 2a+b, as shown in Figure 4 B, so
The slave part 1104 is formed by anisotropic etching afterwards, as shown in Figure 4 C, the slave part
1104, due to the position being formed within the side wall of the second mask layer pattern 1112, effectively can subtract
Spacing of the little prior art between the side wall that pattern side wall is formed so that reduce the fin for ultimately forming
The distance between body 1114；Additionally, etching cuts out the technical maturity of figure, and the second mask layer figure
The material selection scope of the material and slave part 1104 of shape 1112 is wider, as long as meet second cover
The selective etching ratio >=5 of the material of film layer figure 1112 and the material of first mask layer 1101:1
Material can meet, including the polycrystalline such as silicon, germanium, non-crystalline material, nitride material, oxide material
Material etc., here is not limited.
In actual applications, in order to the fin body 1114 for ensureing to ultimately form can be equally spaced, after cutting out
Second mask layer pattern, 1112 ' width is 2a+3b nm, and the auxiliary mask layer of deposition covered described second
The thickness of the side wall of film layer figure 1112 is 2a+b nm.
In a specific embodiment, 1112 material of the second mask layer pattern is silicon nitride, is passed through
Wet etching carries out cutting to the second mask layer pattern 1112, and rear second mask layer figure is cut out in formation
1112 ' width of shape be 2a+3b=75nm, then by PECVD after described cutting out the second mask
The side wall of layer pattern 1112 ' forms the silica membrane of thickness 2a+b=45nm, then carries out RIE
Etching, after cutting out, the side wall of the second mask layer pattern 1112 ' forms the slave part 1104；Afterwards
Continue the process for forming the slave part 1104 with embodiment one, with reference to shown in Fig. 3 E to Fig. 3 G,
Will not be described in detail herein.
It should be noted that as 1104 material of slave part for being formed cuts out rear second mask with described
The selective etching ratio≤5 of 1112 ' material of layer pattern:1, and during forming slave part 1104, it is described
After cutting out, the excess stock of the upper surface of the second mask layer pattern 1112 ' is removed, as shown in Figure 4 C,
The step that the present embodiment is referred in can not adopting embodiment one described in Fig. 3 E to Fig. 3 G is described to remove
Second mask layer pattern 1112 ' after cutting out, but the second mask after directly passing through to cut out described in etching removal
Layer pattern 1112 '.Additionally, the process of above-mentioned formation slave part 1104 can by single/
Repeatedly complete, when test finds 1104 thickness of slave part for being formed less than 45nm, can pass through
Above steps may be repeated multiple times until forming slave part 1104 of the thickness for 45nm.
Step S13, forms the first side wall 1105 in the side wall of the slave part 1104, and with described
First side wall 1105 is performed etching for mask until exposing the lining outside first side wall 1105
Bottom 100, forms the first mask layer pattern 1111, with reference to shown in 3H figures to Fig. 3 K.
With shown in embodiment one, wherein, by PECVD cvd nitride silicon thin film so that side wall
The thickness of the silicon nitride film at place is 15nm, with reference to shown in Fig. 3 H；Carry out anisotropic etching until
The first side wall 1105 is formed, with reference to shown in Fig. 3 I；Then flat surface is formed by filling silicon dioxide；
Then the substrate 100 until outside exposure first side wall 1105 is performed etching, with reference to Fig. 3 J
It is shown, form the first mask layer pattern 1111.
Step S14, forms the second side wall 1113 in the side wall of the first mask layer pattern 1111, and
Acquisition fin body 1114 is performed etching by mask of second side wall 1113, with reference to Fig. 3 L to Fig. 3 O
It is shown.
In the present embodiment, the thickness 15nm of second side wall 1113, with second side wall 1113
Acquisition fin body 1114 is performed etching to silicon substrate for mask.Reference implementation example one, will not be described in detail herein.
So far, fin body critical size Fin CD have been formed for 15nm, fin body spacing critical size Space
CD is 15nm, in the Small Distance fin body of 1112 position of the second mask layer pattern.Further,
In order to all form equidistant Small Distance fin body in whole substrate surface, between the second mask layer pattern 1112
Away from for 75nm.
In embodiments of the present invention, the first mask layer 1101, the second mask layer pattern 1112 are being formed with
Substrate 100 on, covered described second by etching technics, depositing operation and side wall shifting process
The different slave part 1104 of etch rate, the slave part are formed within 1112 side of film layer figure
1104 spacing being smaller than between traditional side wall transfer techniques formation side wall, then according to autoregistration
Multiple imaging obtains fin body 1114.As the method passes through etching technics, depositing operation and side
Wall shifting process forms different auxiliary of etch rate within 1112 side of the second mask layer pattern
Part 1104 is helped, conventional side wall transfer techniques can be reduced by the step and be formed the second mask layer pattern
Spacing between 1112 side wall, can effectively reduce existing self-aligned technology and form the distance between side wall,
Then it is 15nm to form fin body critical size Fin CD by multiple autoregistration imaging method, between fin body
Away from the Small Distance fin body that critical size Space CD are 15nm.
It should be noted that the Small Distance fin body formed by the method, can be not only used for FinFET
Preparation, it may also be used for during other need the application of Small Distance fin body structure, for example, can be used for IC's
Prepare in copper interconnection process to form groove, here is not limited.
Although the present invention is disclosed as above with preferred embodiment, but is not limited to the present invention.Appoint
What those of ordinary skill in the art, under without departing from technical solution of the present invention ambit, all can profit
Many possible variations are made to technical solution of the present invention with the methods and techniques content of the disclosure above and is repaiied
Decorations, or the Equivalent embodiments for being revised as equivalent variations.Therefore, it is every without departing from technical solution of the present invention
Content, according to the present invention technical spirit to any simple modification made for any of the above embodiments, equivalent
Change and modification, still fall within the range of technical solution of the present invention protection.
Claims (10)
1. it is a kind of formed Small Distance fin body method, it is characterised in that include：
Substrate is provided, the first mask layer, the second mask layer pattern on the substrate, has been sequentially formed；
The different slave part of etch rate is formed within the second mask layer pattern side, and is gone
Except the material on first mask layer, in addition to the slave part；
The first side wall is formed in the side wall of the slave part, and is carried out as mask with first side wall
Etching forms the first mask layer pattern up to the substrate outside exposure first side wall；
The second side wall is formed in the side wall of the first mask layer pattern, and with second side wall to cover
Film performs etching acquisition fin body.
2. method according to claim 1, it is characterised in that form the second mask layer figure
Shape includes：
The second mask layer is formed on first mask layer；
Hard mask layer is formed on second mask layer；
Photoetching is carried out, litho pattern is defined；
The litho pattern is split by electron beam exposure, formed and the second mask layer figure
Shape identical litho pattern；
Perform etching, until forming the second mask layer pattern；
Remove all layers on the second mask layer pattern.
3. method according to claim 1, it is characterised in that the second mask layer pattern
Material include it is following any one：Polysilicon, non-crystalline silicon and its lamination.
4. method according to claim 3, it is characterised in that described in second mask layer
Form the different slave part of etch rate within figure side, and remove on first mask layer,
Material outside the slave part includes：
Aoxidized, until different auxiliary of etch rate is formed within the second mask layer pattern side
Help part；
Remove the material on first mask layer, outside the slave part.
5. method according to claim 1, it is characterised in that the second mask layer pattern
The selective etching ratio >=5 of material and the material of first mask layer:1.
6. method according to claim 5, it is characterised in that described in second mask layer
Form the different slave part of etch rate within figure side, and remove on first mask layer,
Material outside the slave part includes：
Carry out the second mask layer pattern after isotropic etching formation is cut out；
Deposit the selective etching ratio≤5 with the second mask layer graphic material after described cutting out:1 auxiliary is covered
Film layer；
Carry out anisotropic etching and form the slave part；
Remove the material on first mask layer, outside the slave part.
7. the method according to claim 4 or 6, it is characterised in that the removal described first
Material on mask layer, outside the slave part includes：
With with the slave part material selective etching ratio >=5:1 material filling groove；
Carry out planarizing until the etch rate formed at the top of removal the second mask layer pattern is different
Part；
Perform etching on removal first mask layer, the material outside the slave part.
8. the method according to any one of claim 1 to 6, it is characterised in that to form fin body
Critical size Fin CD be a, fin body spacing critical size Space CD for b Small Distance fin body, institute
It is 6a+5b to state the second mask layer graphic width, and the second mask layer pattern pitch is 2a+3b, described
Slave part width is 2a+b, and the thickness of first side wall is b, and the thickness of second side wall is
a。
9. method according to claim 8, it is characterised in that the litho pattern width is n
Times the second mask layer graphic width and (n-1) the second mask layer pattern pitch sum again, wherein,
N is >=2 positive integer.
10. method according to claim 8, it is characterised in that it is described cut out after the second mask
Layer pattern width is 2a+3b.
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Application publication date: 20170426 |