CN106558621A - A kind of device at continuously adjustable plasmon resonance peak - Google Patents
A kind of device at continuously adjustable plasmon resonance peak Download PDFInfo
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- CN106558621A CN106558621A CN201610891749.9A CN201610891749A CN106558621A CN 106558621 A CN106558621 A CN 106558621A CN 201610891749 A CN201610891749 A CN 201610891749A CN 106558621 A CN106558621 A CN 106558621A
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- 239000000758 substrate Substances 0.000 claims abstract description 70
- 230000008859 change Effects 0.000 claims abstract description 28
- 230000000737 periodic effect Effects 0.000 claims abstract description 9
- 230000003252 repetitive effect Effects 0.000 claims abstract description 9
- 238000002198 surface plasmon resonance spectroscopy Methods 0.000 claims abstract description 8
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 41
- 229910021389 graphene Inorganic materials 0.000 claims description 39
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- 238000007906 compression Methods 0.000 claims description 14
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 5
- 229910052737 gold Inorganic materials 0.000 claims description 5
- 239000010931 gold Substances 0.000 claims description 5
- -1 polydimethylsiloxane Polymers 0.000 claims description 5
- 229910052709 silver Inorganic materials 0.000 claims description 5
- 239000004332 silver Substances 0.000 claims description 5
- 239000004205 dimethyl polysiloxane Substances 0.000 claims description 4
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 claims description 4
- 229910000510 noble metal Inorganic materials 0.000 claims description 3
- 230000009286 beneficial effect Effects 0.000 abstract description 2
- 239000002086 nanomaterial Substances 0.000 description 8
- 230000008901 benefit Effects 0.000 description 5
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- 238000010168 coupling process Methods 0.000 description 5
- 238000005859 coupling reaction Methods 0.000 description 5
- 238000001514 detection method Methods 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 150000001336 alkenes Chemical class 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000005265 energy consumption Methods 0.000 description 3
- 229910002804 graphite Inorganic materials 0.000 description 3
- 239000010439 graphite Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/84—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of applied mechanical force, e.g. of pressure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1606—Graphene
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
- H10K77/10—Substrates, e.g. flexible substrates
- H10K77/111—Flexible substrates
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
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Abstract
The invention discloses a kind of device at continuously adjustable plasmon resonance peak, including：Flexible substrates with periodic structure, and periodically arrange on a flexible substrate and the band with surface plasmon resonance property；Change cycle and the amplitude of flexible substrates by compressing or stretching flexible substrates, so as to change the effective dielectric constant of the geometry and its local environment of band, realize the adjustable of plasmon resonance peak.The minimum repetitives of the shape of cross section of flexible substrates are sinusoidal, triangle, trapezoidal or semicircle.Half period of the band coverage less than the minimum repetitives of the flexible substrates.The present invention is capable of achieving the beneficial effect of the position at continuous controllable adjustment plasmon resonance peak on a large scale.
Description
Technical field
The invention belongs to Meta Materials field, more particularly, to a kind of device at continuously adjustable plasmon resonance peak.
Background technology
The continuously adjustabe at plasmon resonance peak has great significance for fields such as bio-sensing, photoelectricity.It is existing
In document, for traditional metal material, mainly by size and the interval of the structure of change preparation, size itself can change
Become the position of formant, while interval can affect the coupling between structure, so as to affect the position of formant.For graphite
This material of alkene, its electronics are the Two-dimensional electrons of massless, size, interval and the layer except changing graphene nano structure
Number, can also be adjusted by way of changing the fermi level of Graphene.Change size, the interval of graphene nano structure
The spacing of internal structure unit can be changed with the number of plies, the movement of formant is realized so as to change stiffness of coupling.Chemical doping with
Grid voltage two ways principle is identical, is all by changing the concentration of carrier so as to change the fermi level of Graphene adjusting
The position at section plasmon resonance peak.The former can be doped to Graphene by the process of solion, be one passive
Device, device prepared by the latter are active, but can be achieved on continuously adjusting for formant.For example, existing document Yang X,
Kong X T, Bai B, et al.Substrate Phonon-Mediated Plasmon Hybridization in
Coplanar Graphene Nanostructures for Broadband PlasmonicCircuits [J] .Small,
2015,11 (5):591-596, a document Ju L in addition, Geng B, Horng J, et al.Grapheneplasmonics
For tunable terahertz metamaterials [J] .Nature nanotechnology, 2011,6 (10):630-
634, grid voltage is introduced to the graphene nanobelt for preparing on a silicon substrate by the structure of field-effect transistor, graphite is made
The fermi level of alkene changes, while the impact to the size and dutycycle of nanostructured is studied, realizes graphite
The formant of alkene phasmon is in the adjustable function of specific band.
In this several regulative mode, change the size of nanostructured, interval, number of plies etc. and chemical doping these mode lists
Secondary process can only obtain single data, and the position to enable peak changes within the specific limits, and needs are repeatedly processed, work
Work amount is big and is unable to consecutive variations, and what is obtained is one group of discrete spectral line in the range of this, and passes through to introduce the side of grid voltage
Formula, although can continuously adjust the position of the formant of Graphene phasmon, but whole device is active, in energy consumption
On there is no advantage, and voltage range is restricted, can only adjust in a small range.
The content of the invention
For the defect of prior art, the invention provides a kind of device at continuously adjustable plasmon resonance peak, its
Purpose is that the controllable adjustment continuous on a large scale at plasmon resonance peak is realized using the good mechanical performance of flexible substrates；Purport
In prior art is solved the problems, such as, the range of accommodation at plasmon resonance peak is little.
For achieving the above object, the invention provides a kind of device at continuously adjustable plasmon resonance peak, its feature
It is, including：Flexible substrates with periodic structure, and be periodically arranged in the flexible substrates and there is surface
The band of plasmon resonance property；Changed by compressing or stretching the flexible substrates flexible substrates cycle and
Amplitude, so as to change the effective dielectric constant of the geometry and its local environment of band, realizes plasmon resonance peak
It is adjustable.
Further, the minimum repetitives of the shape of cross section of flexible substrates are sinusoidal, triangle, trapezoidal or half
It is circular.As long as when substrate is deformed upon, the strain that substrate is subject to can change the geometry and its local environment of band
Effective dielectric constant, can realize adjusting the purpose at plasmon resonance peak.
Further, half period of the band coverage less than the minimum repetitives of the flexible substrates.This device
It is the surface plasmon resonance of local for scope, can not covers between band and band or connect, it is desirable to have be certain
Gap, could meet the condition that resonance occurs.
Further, band is arranged at the peaks or valleys of the flexible substrates.When substrate is stretched or compresses,
The strain that the band of peaks or valleys is subject to is maximum, it is possible to obtain best regulating effect.
Further, band is arranged at the peak and valley of the flexible substrates simultaneously.
Further, the material of band is the Graphene with two-dimentional massless electronics or noble metal.For Graphene
This material, its electronics are the Two-dimensional electrons of massless, size, interval and the number of plies except changing graphene nano structure,
Can also be adjusted by way of changing the fermi level of Graphene.Change graphene nano structure size, interval and
The number of plies can change the spacing of internal structure unit, and the movement of formant is realized so as to change stiffness of coupling.
Further, the material of band is gold or silver.
Further, the material of flexible substrates is polydimethylsiloxane, and the material of the band is Graphene.Poly- two
Methylsiloxane is a kind of transparent flexible substrates, with certain range of stretch, can pass through to adjust proportioning change substrate
Level of stretch.Graphene is a kind of two-dimensional material, and adjusting for its plasmon resonance peak can also be by changing fermi level
Mode is realized, and Graphene itself also has certain flexibility, has good mechanical performance.
Further, the compression being applied in the flexible substrates or the scope of elongation strain by different materials most
Big compression or level of stretch determine, compression strain typically 0～1 scope, maximum is determined by maximum compression degree, by formula
Sub- ε=(L0-L)/L0Be given, wherein L0For the initial length of substrate, L is the length after substrate compression, and L has when taking minima
Maximum compression is strained.Elongation strain is generally higher than 0, and maximum is determined by maximum tension degree, by formula ε=(L0-L)/L0Give
Go out, wherein L0For the initial length of substrate, L is the length after substrate tension, and L has maximum tension to strain when taking maximum.
It is by the contemplated above technical scheme of the present invention, compared with prior art, as a result of flexible material, flexible
The stretchable or compression degree of material by itself property determine, by mechanical means, significantly continuously can stretch or
Person's compress substrate, so as to straining of changing that substrate is subject to, and then changes the effective dielectric constant of band present position, can obtain
The beneficial effect of the position at continuous controllable adjustment plasmon resonance peak on a large scale.
Description of the drawings
Fig. 1 is the first embodiment schematic diagram according to the present invention；
Fig. 2 is according to second embodiment of the present invention schematic diagram；
Fig. 3 is according to third embodiment of the present invention schematic diagram.
Specific embodiment
In order that the objects, technical solutions and advantages of the present invention become more apparent, it is below in conjunction with drawings and Examples, right
The present invention is further elaborated.It should be appreciated that specific embodiment described herein is only to explain the present invention, and
It is not used in the restriction present invention.
It is an object of the invention to a new dimension is provided to continuously adjusting for plasmon resonance peak, using flexible base
The good mechanical performance at bottom, reaches a kind of purpose at continuous controllable adjustment plasmon resonance peak.This mode is also passive
, there is in energy consumption advantage.Larger range of regulation can be obtained with reference to existing technology simultaneously.
A kind of device at continuously adjustable plasmon resonance peak that the present invention is provided includes：With the soft of periodic structure
Property substrate 1, and be periodically arranged in flexible substrates 1 with surface plasmon resonance property band 2；By compression
Or stretch flexible substrates 1 to change cycle and the amplitude of substrate 1, so as to realize the adjustable of plasmon resonance peak.
The minimum repetitives of the shape of cross section of the flexible substrates 1 with periodic structure can be sinusoidal, triangle
It is shape, trapezoidal or semicircle.
2 coverage of band with surface plasmon resonance property should be less than the flexible substrates with periodic structure
The half period of 1 minimum repetitives, it is ensured that have gap between adjacent nanostructured, continuous thin film will not be formed.Have
The size of the band 2 of plasmon resonance property can affect the position of formant, when the width of band increases, the position of formant
Put and can move to long wave length direction.
When band 2 to be arranged on the position of peaks or valleys of substrate 1, deformation quantity is maximum, can be optimal
Effect.So that the minimum repetitives of cross section are sine-shaped substrate as an example, it is to obtain optimum regulating effect, will can has
The band 2 of surface plasmon resonance property is arranged on the position at peak or the position of paddy, or while is arranged on peak and valley
Position.
As long as the material with surface plasmon resonance property can realize our goal of the invention, for example, have
The Graphene of two-dimentional massless electronics, noble metal such as gold, silver etc..
Used as one embodiment of the present of invention, the band 2 with plasmon resonance property is Graphene, with periodically
The flexible substrates 1 of structure are polydimethylsiloxane.
In embodiments of the present invention, in addition to the components described above, the material with plasmon resonance property of the invention is also
Can be the other materials such as metal, such as gold, silver etc..
So that the minimum repetitives of cross section are sine-shaped substrate as an example.The initial length of substrate is designated as L0, compress it
Length afterwards is designated as L, and the strain stress after substrate compression is by formula ε=(L0-L)/L0Be given, during strain increase, formant can be to
Long wave length direction is moved, and also cries red shift, this is because during compression, the geometry of band changes, residing for which
The effective dielectric constant of environment can become big, so as to obtain formant in the longer position of wavelength.Conversely, when elongate substrate,
Strain after substrate tension is by formula ε=(L0-L)/L0Be given, during strain increase, the geometry of band changes, its
The effective dielectric constant of residing environment can reduce, and formant can be moved to shortwave length direction, be also blue shift.
In embodiments of the present invention, the band 2 with plasmon resonance property is Graphene, with periodic structure
Flexible substrates 1 are polydimethylsiloxane.The flexible substrates of periodic structure can be various shapes, and such as cross section is sinusoidal
Structure, rectangular raster structure etc..Band 2 with plasmon resonance property can periodically be placed in appointing for flexible substrates 1
Meaning position, when such as substrate is sinusoidal, to make deformation quantity maximum, can be placed in peak, the paddy position of sinusoidal substrate, or while
It is placed in the position of peak and valley.
In embodiments of the present invention, in addition to the components described above, the material with plasmon resonance property of the invention is also
Can be the other materials such as metal, such as gold, silver etc..
We can select suitable material, the device that the present invention is provided to can apply to life according to specific application
The numerous areas such as analyte detection, Meta Materials and integrated plasma circuit.Usually combined process prepares nanostructure size
The limit, and according to waveband selection suitable material, wherein metal is generally used for visible ray near infrared band, and Graphene is typically used
In mid-infrared to terahertz wave band.Document Rodrigo D, Limaj O, Janner D, et al.Mid- are had for example
Infrared plasmonicbiosensing with graphene [J] .Science, 2015,349 (6244):165-168.
It is scanned in the range of mid-infrared by the change of resonant positions, when having biomolecule such as protein on the surface of Graphene
When, a depression occurs at the position of formant, the purpose of biological detection has thus been reached.Separately there are document Adato R,
Altug H.In-situ ultra-sensitive infrared absorption spectroscopy of
biomolecule interactions in real time with plasmonicnanoantennas[J].Nature
Communications, 2013, the function of biological detection is also achieved using the nanostructured of metal in infrared band 4..Also
Document Ju L, Geng B, Horng J, et al.Grapheneplasmonics for tunable terahertz
Metamaterials [J] .Nature nanotechnology, 2011,6 (10):Graphenes of the 630-634 using nanostructured
Band is prepared for Meta Materials, by the fermi level for controlling dutycycle and Graphene, changes the position of the formant of Graphene, from
And realize the regulation of Spectral Extinction.
According to the structure and regulative mode of the present invention, it is possible to achieve continuous controllable adjustment plasmon resonance peak on a large scale
Position.Based on this Meta Materials invented can be used for biomolecule detection, the monitoring of in-situ chemical reaction and it is integrated etc. from
The aspects such as daughter circuit.
In existing document, for traditional metal material, mainly by change the structure for preparing size and
Every, size itself can change the position of formant, while interval can affect the coupling between structure, so as to affect formant
Position.For this material of Graphene, its electronics is the Two-dimensional electron of massless, the chi except changing graphene nano structure
Very little, interval and the number of plies, can also be adjusted by way of changing the fermi level of Graphene.Change graphene nano knot
The size of structure, interval and the number of plies can change the spacing of internal structure unit, and the shifting of formant is realized so as to change stiffness of coupling
It is dynamic.The fermi level for changing Graphene can be realized with grid voltage two ways by chemical doping, by changing current-carrying
The concentration of son adjusts the position at plasmon resonance peak so as to change the fermi level of Graphene.For example, existing document Yang
X, Kong X T, Bai B, et al.Substrate Phonon-Mediated Plasmon Hybridization in
Coplanar Graphene Nanostructures for Broadband PlasmonicCircuits [J] .Small,
2015,11 (5):591-596 and document Ju L, Geng B, Horng J, et al.Grapheneplasmonics for
Tunable terahertz metamaterials [J] .Nature nanotechnology, 2011,6 (10):630-634,
Grid voltage is introduced to the graphene nanobelt for preparing on a silicon substrate by the structure of field-effect transistor, Graphene is made
Fermi level changes, while the impact to the size and dutycycle of nanostructured is studied, realizes Graphene etc.
Formant from excimer is in the adjustable function of specific band.
In prior art, only change size, interval or number of plies etc. and chemical doping these modes of nanostructured not
The formant of surface phasmon can be continuously adjusted in certain scope, although the device for preparing can be passive.And
By way of introducing grid voltage, although can continuously adjust the position of the formant of Graphene phasmon, but it is whole
Individual device is active, does not have advantage, and is limited by voltage range, can only adjust in a small range in energy consumption.This
Invention is obtained through comsol emulation, when 200 nanometers of bands are positioned at the peak that cross section is sine-shaped periodic structure substrate
Position when, by compress substrate, when compression strain becomes from 0 turns to 0.8, resonant wavelength can be from 15.3 μm of red shifts to 25.2
μm, it is possible to achieve in the larger context the position of formant is continuously adjusted.Simultaneously on the basis of the present invention, also
Can combine to obtain more preferable effect with the regulative mode being previously mentioned, one is provided equivalent in another degree of freedom
Individual new regulative mode.
In order that the objects, technical solutions and advantages of the present invention become more apparent, it is below in conjunction with drawings and Examples, right
The present invention is further elaborated.It should be appreciated that specific embodiment described herein is only to explain the present invention, and
It is not used in the restriction present invention.
Figures 1 and 2 show that the first embodiment and second embodiment of the present invention.As shown in fig. 1, according to this
Bright embodiment, main body are made up of substrate 1 and band 2.Band 2 is periodically located in substrate, for example, can be the position at peak
Put, the shape of 1 cross section of substrate can for example be sinusoidal.Stripping can for example be Graphene.When transverse compression substrate
When, as stress substrate can be deformed upon, so as to change the curvature of band present position, the position of band formant will occur
It is mobile.
As shown in Fig. 2 according to second embodiment of the present invention, main body composition is identical with Fig. 1, by cross directional stretch base
Bottom, as stress substrate can be deformed upon, changes the curvature of band present position, and the position of band formant can also occur to move
It is dynamic, but moving direction is conversely, combine first embodiment, it is possible to achieve the reversible moving of band formant.
Fig. 3 shows the 3rd embodiment, and its main body is identical with Fig. 1 and Fig. 2, when stretching or compress substrate, trapezoidal
Shape can change, so as to change the effective dielectric constant of the geometry and its local environment of band, reach regulation
Purpose.
As it will be easily appreciated by one skilled in the art that the foregoing is only presently preferred embodiments of the present invention, not to
The present invention, all any modification, equivalent and improvement made within the spirit and principles in the present invention etc. are limited, all should be included
Within protection scope of the present invention.
Claims (9)
1. a kind of device at continuously adjustable plasmon resonance peak, it is characterised in that include：Flexibility with periodic structure
Substrate (1), and be periodically arranged in the flexible substrates (1) and the band with surface plasmon resonance property
(2)；Change cycle and the amplitude of the flexible substrates (1) by compressing or stretching the flexible substrates (1), so as to change
Effective dielectric constant of the band with surface plasmon resonance property (2) local environment, realizes plasmon resonance peak
It is adjustable.
2. device as claimed in claim 1, it is characterised in that the minimum of the shape of cross section of the flexible substrates (1) repeats
Unit is sinusoidal, triangle, trapezoidal or semicircle.
3. device as claimed in claim 1 or 2, it is characterised in that band (2) coverage is less than the flexible substrates
(1) half period of minimum repetitives.
4. the device as described in any one of claim 1-3, it is characterised in that the band (2) is arranged on the flexible substrates
(1) at peaks or valleys.
5. the device as described in any one of claim 1-3, it is characterised in that the band (2) is while be arranged on the flexibility
At the peak and valley of substrate (1).
6. the device as described in any one of claim 1-5, it is characterised in that the material of the band (2) is with two-dimentional nothing
The Graphene or noble metal of quality electronic.
7. device as claimed in claim 6, it is characterised in that the material of the band (2) is gold or silver.
8. device as claimed in claim 6, it is characterised in that the material of the flexible substrates (1) is polydimethylsiloxane,
The material of the band (2) is Graphene.
9. device as claimed in claim 8, it is characterised in that the compression being applied in the flexible substrates (1) or stretching
Strain is determined by the maximum compression or level of stretch of different materials.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107703105A (en) * | 2017-10-31 | 2018-02-16 | 上海理工大学 | The adjustable substrate of surface plasma performance and preparation method |
| CN108387556A (en) * | 2018-03-21 | 2018-08-10 | 广西师范大学 | A kind of surface plasma waveguide optical sensing devices of grapheme material |
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