CN106556976B - A kind of method and system based on measurement photoresist film thickness monitoring photoresist side washing precision - Google Patents
A kind of method and system based on measurement photoresist film thickness monitoring photoresist side washing precision Download PDFInfo
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- CN106556976B CN106556976B CN201611079480.0A CN201611079480A CN106556976B CN 106556976 B CN106556976 B CN 106556976B CN 201611079480 A CN201611079480 A CN 201611079480A CN 106556976 B CN106556976 B CN 106556976B
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
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- General Physics & Mathematics (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
The present invention relates to a kind of based on the method and system for measuring photoresist film thickness monitoring photoresist side washing precision, method includes the following steps, S1, and side washing board carries out photoresist side washing according to preset side washing to the control wafer for being coated with photoresist；S2, a specification limit is set to preset side washing on film thickness board, and multiple film thickness measuring points are established according to the specification limit of setting, and photoresist film thickness measurement is carried out respectively to the corresponding position of the control wafer after photoresist side washing according to multiple film thickness measuring points, export the location information of multiple film thickness measuring points；The location information of multiple film thickness measuring points of output with the specification limit set is compared, determines the photoresist side washing precision of side washing board by S3.The present invention can be monitored the variation of the photoresist side washing precision of side washing board in time, pinpointed the problems in time, reduced yield loss with regular monitoring；It can think error caused by measuring to avoid using vernier caliper simultaneously, improve the measurement accuracy for measuring photoresist side washing.
Description
Technical field
The present invention relates to a kind of method and system of photoresist side washing monitoring, and in particular to one kind is supervised based on photoresist film thickness is measured
Control the method and system of photoresist side washing precision.
Background technology
Board photoresist side washing is to carry out coating photoresist to control wafer (a kind of wafer) by side washing board and to being coated with photoresist
Control wafer carries out edge clean according to the required precision of side washing, so the photoresist side washing precision of side washing board is very important.
In the prior art, the precision of the photoresist side washing of side washing board generally only can be just measured when board is safeguarded, so, interval
Time is too long, problematic to find in time, and production yield is caused to decline；The photoresist side washing precision of side washing board is measured simultaneously
Method uses vernier calliper dipstick metering for artificial, can there is the error of some subjectivities in this way.
Invention content
The technical problems to be solved by the invention are to provide a kind of based on measuring photoresist film thickness monitoring photoresist side washing precision
Method and system, can regular, timely and accurate monitoring photoresist side washing.
The technical solution that the present invention solves above-mentioned technical problem is as follows：One kind is based on measurement photoresist film thickness monitoring photoresist side washing
The method of precision, includes the following steps,
S1, side washing board carry out photoresist side washing according to preset side washing to the control wafer for being coated with photoresist；
S2 sets preset side washing on film thickness board one specification limit, and is established according to the specification limit of setting
Multiple film thickness measuring points, and photoresistance film is carried out respectively to the corresponding position of the control wafer after photoresist side washing according to multiple film thickness measuring points
Thickness measures, and exports the location information of multiple film thickness measuring points；
The location information of multiple film thickness measuring points of output with the specification limit set is compared, determines side washing by S3
The photoresist side washing precision of board
The beneficial effects of the invention are as follows：The present invention is a kind of based on the method profit for measuring photoresist film thickness monitoring photoresist side washing precision
The photoresist side washing precision of side washing board is fast and accurately monitored with the method for measuring film thickness, can in time be supervised with regular monitoring
The variation of the photoresist side washing precision of side washing board is controlled, is pinpointed the problems in time, reduces yield loss；It simultaneously can be to avoid using vernier
Slide calliper rule think error caused by measuring, and improve the measurement accuracy for measuring photoresist side washing.
Based on the above technical solution, the present invention can also be improved as follows.
Further, step S1 specifically,
S11 establishes a side washing for side washing board and controls program, and preset a side washing in side washing controls program；
S12, side washing control program side washing board to be controlled to carry out photoresist to the control wafer for being coated with photoresist according to preset side washing and wash
Side.
Further, the number of the film thickness measuring point is 8, and the position of 8 film thickness measuring points is in the rule of setting
In the range of lattice.
Further, in the left side lower limit measurement point, the left side in the specification limit that 8 film thickness measuring points are respectively set
Limit measurement point, the right lower limit measurement point, the right upper limit measurement point, top lower limit measurement point, top upper limit measurement point, following lower limit
Measurement point and following upper limit measurement point.
Advantageous effect using above-mentioned further scheme is：8 film thickness measuring points, can measure on control wafer four direction
Upper limit value and lower limiting value are the side washings that measurement point surrounds photoresist in control wafer, improve measurement accuracy.
Further, the step S3 specifically,
S31 establishes statistical Process Control program, and passes through the position that statistical Process Control program obtains multiple film thickness measuring points
Put the specification limit of data and setting；
S32 compares the position data of multiple film thickness measuring points got and the specification limit of preset side washing,
Determine the photoresist side washing precision of side washing board.
Advantageous effect using above-mentioned further scheme is：The present invention is by statistical Process Control program using automation
Measurement and contrastive pattern, it is possible to reduce machine of delaying is pinpointed the problems in time, avoids human factor error.
Based on a kind of above-mentioned method based on measurement photoresist film thickness monitoring photoresist side washing precision, the present invention also provides a kind of bases
In the system for measuring photoresist film thickness monitoring photoresist side washing precision.
A kind of system based on measurement photoresist film thickness monitoring photoresist side washing precision is based on measuring using one kind described above
The method of photoresist film thickness monitoring photoresist side washing precision measures, including photoresist side washing module, film thickness measuring module and photoresist essence
Spend monitoring module,
The photoresist side washing module is used to carry out the control wafer for being coated with photoresist according to preset side washing by side washing board
Photoresist side washing；
The film thickness measuring module is used to set a specification limit to preset side washing, and according to the specification of setting
Range establishes multiple film thickness measuring points, and according to multiple film thickness measuring points to the corresponding position of the control wafer after photoresist side washing respectively into
Row photoresist film thickness measures, and exports the location information of multiple film thickness measuring points；
The photoresist precision monitoring module is used for the rule by the location information of multiple film thickness measuring points of output and setting
Lattice range is compared, and determines the photoresist side washing precision of side washing board.
The beneficial effects of the invention are as follows：The present invention is a kind of based on the system profit for measuring photoresist film thickness monitoring photoresist side washing precision
The photoresist side washing precision of side washing board is fast and accurately monitored with the method for measuring film thickness, can in time be supervised with regular monitoring
The variation of the photoresist side washing precision of side washing board is controlled, is pinpointed the problems in time, reduces yield loss；It simultaneously can be to avoid using vernier
Slide calliper rule think error caused by measuring, and improve the measurement accuracy for measuring photoresist side washing.
Based on the above technical solution, the present invention can also be improved as follows.
Further, the photoresist side washing module controls program, and in side washing specifically, establishing a side washing for side washing board
It controls and a side washing is preset in program；Side washing controls program to control side washing board to being coated with the control wafer of photoresist according to preset side washing
Carry out photoresist side washing.
Further, the number of the film thickness measuring point is 8, and the position of 8 film thickness measuring points is in the rule of setting
In the range of lattice.
Further, in the left side lower limit measurement point, the left side in the specification limit that 8 film thickness measuring points are respectively set
Limit measurement point, the right lower limit measurement point, the right upper limit measurement point, top lower limit measurement point, top upper limit measurement point, following lower limit
Measurement point and following upper limit measurement point.
Advantageous effect using above-mentioned further scheme is：8 film thickness measuring points, can measure on control wafer four direction
Upper limit value and lower limiting value are the side washings that measurement point surrounds photoresist in control wafer, improve measurement accuracy.
Further, the photoresist precision monitoring module is specifically, establish statistical Process Control program, and pass through statistic processes
Program is controlled to obtain the position data of multiple film thickness measuring points and the specification limit of setting；The multiple film thickness measuring points that will be got
Position data and setting specification limit compared, determine the photoresist side washing precision of side washing board.
Advantageous effect using above-mentioned further scheme is：Advantageous effect using above-mentioned further scheme is：The present invention
Pass through measurement of the statistical Process Control program using automation and contrastive pattern, it is possible to reduce machine of delaying is pinpointed the problems, avoided in time
Human factor error.
Description of the drawings
Fig. 1 is a kind of flow chart based on the method for measuring photoresist film thickness monitoring photoresist side washing precision of the present invention；
Fig. 2 is that the present invention is a kind of based on photoresist side washing and film thickness in the method for measuring photoresist film thickness monitoring photoresist side washing precision
The structure diagram of test point；
Fig. 3 is the side view of Fig. 2.
Specific embodiment
The principle and features of the present invention will be described below with reference to the accompanying drawings, and the given examples are served only to explain the present invention, and
It is non-to be used to limit the scope of the present invention.
As shown in Figure 1, a kind of method based on measurement photoresist film thickness monitoring photoresist side washing precision, includes the following steps,
S1, side washing board carry out photoresist side washing according to preset side washing to the control wafer for being coated with photoresist；
S2 sets preset side washing on film thickness board one specification limit, and is established according to the specification limit of setting
Multiple film thickness measuring points, and photoresistance film is carried out respectively to the corresponding position of the control wafer after photoresist side washing according to multiple film thickness measuring points
Thickness measures, and exports the location information of multiple film thickness measuring points；
The location information of multiple film thickness measuring points of output with the specification limit set is compared, determines side washing by S3
The photoresist side washing precision of board.
Step S1 specifically,
S11 establishes a side washing for side washing board and controls program (track recipe), and pre- in side washing controls program
An if side washing；
S12, side washing control program side washing board to be controlled to carry out photoresist to the control wafer for being coated with photoresist according to preset side washing and wash
Side.One side washing value of setting inside the control program of side washing board, such as 3mm, it can control the side washing of side washing board to spray
Mouth cleans the photoresist in control wafer to the position specified.
The number of the film thickness measuring point is 8, and the position of 8 film thickness measuring points is in the specification limit of setting
It is interior.
Fig. 2 is that the present invention is a kind of based on photoresist side washing and film thickness in the method for measuring photoresist film thickness monitoring photoresist side washing precision
The structure diagram of test point, in fig. 2, outer circle are control wafer, and inner circle is photoresist, and the arrow between outer circle and inner circle is washed for photoresist
Side, solid dot are film thickness measuring point；Fig. 3 is the side view of Fig. 2, and what dotted line represented is the precision of photoresist side washing in Fig. 3, that is, is set
Specification limit, solid dot be film thickness measuring point；8 film thickness measuring points are respectively under the left side in the specification limit set
Limit measurement point, left side upper limit measurement point, the right lower limit measurement point, the right upper limit measurement point, top lower limit measurement point, the top upper limit
Measurement point, following lower limit measurement point and following upper limit measurement point.
The step S3 specifically,
S31 establishes statistical Process Control program (SPC), and passes through statistical Process Control program and obtain multiple film thickness measuringes
The position data of point and the specification limit of setting；
The specification limit of the position data of the multiple film thickness measuring points got and setting is compared, determines to wash by S32
The photoresist side washing precision of side board.With PR 2000A EBR control wafers, preset side washing is 3mm, and the specification limit set is +/-
For 0.3mm (side washing precision), the specification limit of 8 film thickness measuring points and setting is as shown in the table：
| Film thickness measuring point | Measure position | SPEC |
| Left side lower limit measuring point | X=-147.3 | 0 |
| Left side upper limit measuring point | X=-146.7 | 2000+/- 10% |
| The right lower limit measuring point | X=147.3 | 0 |
| The right upper limit measuring point | X=146.7 | 2000+/- 10% |
| Top lower limit measuring point | Y=147.3 | 0 |
| Top upper limit measuring point | Y=146.7 | 2000+/- 10% |
| Following lower limit measuring point | Y=-147.3 | 0 |
| Following upper limit measuring point | Y=-146.7 | 2000+/- 10% |
In upper table：The position of measurement set is needed when adjustment location is the measurement control wafer film thickness of film thickness board；SPEC
It is the specification limit of setting；As seen from the above table, 8 film thickness measuring points of collection are whether in the specification limit of setting
(SPEC), if in setting specification limit, photoresist side washing precision reaches requirement, if not being exactly in setting specification limit
Precision is inadequate.
A kind of based in the method for measuring photoresist film thickness monitoring photoresist side washing precision in the present invention, the photoresist of side washing board is washed
Side required precision is in the specification limit of setting, such as side washing required precision is+/ 3mm, that is, requires to wash inside from control wafer side
3mm, then the practical distance washed inside should be in the range of 2.7~3.3mm, if so side washing machine not in the range of this
The photoresist side washing precision of platform is not just up to standard.Film thickness board is the thickness for measuring photoresist, and the place of side washing does not have photoresist, so film thickness
The thickness that board measures is 0, and there is photoresist in the place of no side washing, so film thickness board has the thickness value of measurement, film thickness board energy
Enough exporting has the position on thickness and the boundary without thickness value in control wafer, so as to judge the photoresist side washing of side washing board either with or without
In the range of 2.7~3.3mm.
The present invention it is a kind of based on measure photoresist film thickness monitoring photoresist side washing precision method using the method for measuring film thickness come
The photoresist side washing precision of side washing board is fast and accurately monitored, can be with regular monitoring, the photoresist for monitoring side washing board in time is washed
The variation of side precision, pinpoints the problems in time, reduces yield loss；It simultaneously can be caused by avoid measurement be thought using vernier caliper
Error improves the measurement accuracy for measuring photoresist side washing.
Based on a kind of above-mentioned method based on measurement photoresist film thickness monitoring photoresist side washing precision, the present invention also provides a kind of bases
In the system for measuring photoresist film thickness monitoring photoresist side washing precision.
A kind of system based on measurement photoresist film thickness monitoring photoresist side washing precision is based on measuring using one kind described above
The method of photoresist film thickness monitoring photoresist side washing precision measures, including photoresist side washing module, film thickness measuring module and photoresist essence
Spend monitoring module,
The photoresist side washing module is used to carry out the control wafer for being coated with photoresist according to preset side washing by side washing board
Photoresist side washing；
The film thickness measuring module is used to set a specification limit to preset side washing, and according to the specification of setting
Range establishes multiple film thickness measuring points, and according to multiple film thickness measuring points to the corresponding position of the control wafer after photoresist side washing respectively into
Row photoresist film thickness measures, and exports the location information of multiple film thickness measuring points；
The photoresist precision monitoring module is used for the rule by the location information of multiple film thickness measuring points of output and setting
Lattice range is compared, and automatic decision goes out the photoresist side washing precision of side washing board.
The photoresist side washing module controls program specifically, establishing a side washing for side washing board, and controls journey in side washing
A side washing is preset in sequence；Side washing controls program side washing board to be controlled to carry out light to the control wafer for being coated with photoresist according to preset side washing
Hinder side washing.
The number of the film thickness measuring point is 8, and the position of 8 film thickness measuring points is in the specification limit of setting
It is interior.Left side lower limit measurement point, left side upper limit measurement point in the specification limit that 8 film thickness measuring points are respectively set, the right side
Side lower limit measurement point, the right upper limit measurement point, top lower limit measurement point, top upper limit measurement point, following lower limit measurement point and under
Side upper limit measurement point.
The photoresist precision monitoring module is specifically, establish statistical Process Control program, and pass through statistical Process Control journey
Sequence obtains the position data of multiple film thickness measuring points and the specification limit of preset side washing；The multiple film thickness measuring points that will be got
Position data and setting specification limit compared, determine the photoresist side washing precision of side washing board.
The present invention it is a kind of based on measure photoresist film thickness monitoring photoresist side washing precision system using the method for measuring film thickness come
The photoresist side washing precision of side washing board is fast and accurately monitored, can be with regular monitoring, the photoresist for monitoring side washing board in time is washed
The variation of side precision, pinpoints the problems in time, reduces yield loss；It simultaneously can be caused by avoid measurement be thought using vernier caliper
Error improves the measurement accuracy for measuring photoresist side washing.
The foregoing is merely presently preferred embodiments of the present invention, is not intended to limit the invention, it is all the present invention spirit and
Within principle, any modification, equivalent replacement, improvement and so on should all be included in the protection scope of the present invention.
Claims (8)
- It is 1. a kind of based on the method for measuring photoresist film thickness monitoring photoresist side washing precision, it is characterised in that：Include the following steps,S1, side washing board carry out photoresist side washing according to preset side washing to the control wafer for being coated with photoresist；S2 sets a specification limit on film thickness board to preset side washing, and is established according to the specification limit of setting multiple Film thickness measuring point, and photoresist film thickness amount is carried out respectively to the corresponding position of the control wafer after photoresist side washing according to multiple film thickness measuring points It surveys, exports the location information of multiple film thickness measuring points；The location information of multiple film thickness measuring points of output with the specification limit set is compared, determines side washing board by S3 Photoresist side washing precision；The step S3 specifically,S31 establishes statistical Process Control program, and passes through the positional number that statistical Process Control program obtains multiple film thickness measuring points According to the specification limit with setting；The specification limit of the position data of the multiple film thickness measuring points got and setting is compared, determines side washing machine by S32 The photoresist side washing precision of platform.
- 2. according to claim 1 a kind of based on the method for measuring photoresist film thickness monitoring photoresist side washing precision, feature exists In：Step S1 specifically,S11 establishes a side washing for side washing board and controls program, and preset a side washing in side washing controls program；S12, side washing control program side washing board to be controlled to carry out photoresist side washing to the control wafer for being coated with photoresist according to preset side washing.
- It is 3. according to claim 1 or 2 a kind of based on the method for measuring photoresist film thickness monitoring photoresist side washing precision, feature It is：The number of the film thickness measuring point is 8, and the position of 8 film thickness measuring points is in the specification limit of setting.
- 4. according to claim 3 a kind of based on the method for measuring photoresist film thickness monitoring photoresist side washing precision, feature exists In：Left side lower limit measurement point, left side upper limit measurement point in the specification limit that 8 film thickness measuring points are respectively set, the right side Side lower limit measurement point, the right upper limit measurement point, top lower limit measurement point, top upper limit measurement point, following lower limit measurement point and under Side upper limit measurement point.
- It is 5. a kind of based on the system for measuring photoresist film thickness monitoring photoresist side washing precision, it is characterised in that：Utilize the claims 1 It is measured based on the method for measuring photoresist film thickness monitoring photoresist side washing precision to 4 any one of them are a kind of, is washed including photoresist Side module, film thickness measuring module and photoresist precision monitoring module,The photoresist side washing module is used to carry out photoresist to the control wafer for being coated with photoresist according to preset side washing by side washing board Side washing；The film thickness measuring module is used to set a specification limit to preset side washing, and according to the specification limit of setting Multiple film thickness measuring points are established, and light is carried out respectively to the corresponding position of the control wafer after photoresist side washing according to multiple film thickness measuring points It hinders film thickness to measure, exports the location information of multiple film thickness measuring points；The photoresist precision monitoring module is used for the specification model by the location information of multiple film thickness measuring points of output and setting It encloses and is compared, determine the photoresist side washing precision of side washing board；The photoresist precision monitoring module is specifically, establish statistical Process Control program, and pass through statistical Process Control program and obtain Take the position data of multiple film thickness measuring points and the specification limit of setting；The position data of multiple film thickness measuring points that will be got It is compared with the specification limit of setting, determines the photoresist side washing precision of side washing board.
- 6. according to claim 5 a kind of based on the system for measuring photoresist film thickness monitoring photoresist side washing precision, feature exists In：The photoresist side washing module controls program, and pre- in side washing controls program specifically, establishing a side washing for side washing board An if side washing；Side washing controls program side washing board to be controlled to carry out photoresist to the control wafer for being coated with photoresist according to preset side washing and washes Side.
- It is 7. according to claim 5 or 6 a kind of based on the system for measuring photoresist film thickness monitoring photoresist side washing precision, feature It is：The number of the film thickness measuring point is 8, and the position of 8 film thickness measuring points is in the specification limit of setting.
- 8. according to claim 7 a kind of based on the system for measuring photoresist film thickness monitoring photoresist side washing precision, feature exists In：Left side lower limit measurement point, left side upper limit measurement point in the specification limit that 8 film thickness measuring points are respectively set, the right side Side lower limit measurement point, the right upper limit measurement point, top lower limit measurement point, top upper limit measurement point, following lower limit measurement point and under Side upper limit measurement point.
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| TWI772697B (en) | 2019-10-23 | 2022-08-01 | 華邦電子股份有限公司 | Method of monitoring semiconductor process |
| CN112505957A (en) * | 2020-12-11 | 2021-03-16 | 深圳市华星光电半导体显示技术有限公司 | Substrate edge washing method, edge washing device and substrate |
| CN112882340B (en) * | 2021-04-29 | 2021-07-09 | 中芯集成电路制造(绍兴)有限公司 | Photomask, monitoring wafer and method for monitoring wafer surface cleaning precision |
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| CN104167375A (en) * | 2014-08-14 | 2014-11-26 | 武汉新芯集成电路制造有限公司 | Width measurement method |
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| JP2003243278A (en) * | 2002-02-13 | 2003-08-29 | Toppan Printing Co Ltd | Method for measuring resist film thickness and its application method |
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|---|---|---|---|---|
| CN101685271A (en) * | 2008-09-23 | 2010-03-31 | 和舰科技(苏州)有限公司 | Method for detecting wafer edge cleaning width of wafer |
| CN102867762A (en) * | 2012-09-17 | 2013-01-09 | 上海华力微电子有限公司 | Monitoring method of photoetching wafer edge-washing and side glue removing quantity measurement stability |
| CN104167375A (en) * | 2014-08-14 | 2014-11-26 | 武汉新芯集成电路制造有限公司 | Width measurement method |
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