CN106451042A - Chirped pulse amplification system for fiber laser - Google Patents
Chirped pulse amplification system for fiber laser Download PDFInfo
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- CN106451042A CN106451042A CN201610900099.XA CN201610900099A CN106451042A CN 106451042 A CN106451042 A CN 106451042A CN 201610900099 A CN201610900099 A CN 201610900099A CN 106451042 A CN106451042 A CN 106451042A
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- chirped
- amplification system
- amplification
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/06—Construction or shape of active medium
- H01S3/063—Waveguide lasers, i.e. whereby the dimensions of the waveguide are of the order of the light wavelength
- H01S3/067—Fibre lasers
- H01S3/06754—Fibre amplifiers
- H01S3/06758—Tandem amplifiers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/09—Processes or apparatus for excitation, e.g. pumping
- H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
- H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
- H01S3/0941—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/102—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling the active medium, e.g. by controlling the processes or apparatus for excitation
- H01S3/1022—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling the active medium, e.g. by controlling the processes or apparatus for excitation by controlling the optical pumping
Abstract
The invention discloses a chirped pulse amplification system which comprises a pulse seed source, a pulse compressor, a pulse amplifier and a pulse stretcher, wherein the pulse seed source is used for generating a femtosecond laser pulse; the pulse stretcher is used for stretching the femtosecond laser pulse into a stretched pulse; the pulse amplifier is used for amplifying the power of the stretched pulse to generate a stretched and amplified pulse; the pulse compressor is used for compressing the stretched and amplified pulse into an amplified femtosecond pulse. The chirped pulse amplification system has the advantages of simple structure, high average power, high stability and the like in terms of application, and particularly as compared with a femtosecond solid laser capable of generating high energy, has the advantages of high pumping efficiency, convenience for regulation, easiness for fiber coupling and the like.
Description
Technical field
The present invention relates to optical fiber laser, particularly to a kind of chirped pulse amplification system for optical fiber laser.
Background technology
High-capacity optical fiber laser is respectively provided with clear superiority at aspects such as beam quality, volume, weight, efficiency, radiatings, existing
Be widely used to optical-fibre communications, laser space telecommunication, industrial shipbuilding, automobile making, laser cutting, metal welding,
Civilian industry and the military fields such as military and national defense safety, biologic medical, large foundation construction, are referred to as " third generation laser
Device ".Wherein, high power ultra-short pulse laser device is integrated with the advantage of big energy pulse laser instrument and high power continuous wave laser,
In high-precision laser cutting, the welding of high-precision laser deep layer, material surface specially treated, special alloy processing, laser spraying etc.
Aspect has the advantage that can not be substituted.
In recent years, low-loss highly doped rare earth ion optical fiber, high power multimode laser diode (Laser are had benefited from
Diode, LD), the development of doubly clad optical fiber and cladding pumping technique, ytterbium-doping optical fiber laser power output obtains significant increase,
The appearance of large mode field double clad gain fibre is more so that high-average power, high pulse energy, the optical fiber of femtosecond pulse width
Laser instrument becomes a reality.However, in addition to high-average power, optical fiber laser is not met by some polarization characteristics to laser
Require higher application scenario, such as optics coherence tomography or higher hamonic wave to produce etc..
Content of the invention
It is contemplated that at least solving one of technical problem present in prior art.For this reason, the present invention proposes a kind of using
Chirped pulse amplification system in optical fiber laser.
A kind of volume chirped pulse amplification system for optical fiber laser includes pulse seed source, pulse stretcher, pulse
Amplifier and pulse shortener.Described pulse seed source is used for providing femto-second laser pulse.Described pulse stretcher is used for broadening
Described femto-second laser pulse is stretched pulse.Described pulse amplifier is used for amplifying the power of described stretched pulse to produce broadening
Amplify pulse.It is to amplify femtosecond pulse that described pulse shortener is used for compress described broadening amplifying pulse.
In some embodiments, described pulse seed source includes semiconductor laser.
In some embodiments, described semiconductor laser includes pulsed drive or two kinds of mode of operations of DC driven.
In some embodiments, described semiconductor laser includes laser diode.
In some embodiments, the wave-length coverage of described laser diode is 1030-1080 nanometer.
In some embodiments, described semiconductor laser also includes thermistor and semiconductor cooler.Described heat
Quick resistance is used for detecting the temperature of described semiconductor laser.Described semiconductor cooler is used for according to described temperature refrigeration or system
Heat is so that the operating temperature of described semiconductor laser maintains in predetermined temperature range.
In some embodiments, the resistance of described thermistor is 10-50 kilohm.
In some embodiments, described pulse seed source includes the mode locking pulse optical fiber laser of all -fiber.
In some embodiments, described pulse stretcher includes circulator and Chirp Bragg grating.Described circulator
For changing the direction of propagation of described femto-second laser pulse.It is defeated via described circulator that described Chirp Bragg grating is used for broadening
The described femto-second laser pulse going out.
In some embodiments, described circulator includes first end, the second end and the 3rd end.Described first end is used for connecing
Receive by the described described femto-second laser pulse protecting inclined isolator output.Described second end is used for exporting described femto-second laser pulse extremely
Described Chirp Bragg grating simultaneously receives by the described stretched pulse of described Chirp Bragg grating stretching.Described 3rd end is used for
Described stretched pulse is exported to described pulse amplifier.
In some embodiments, described pulse amplifier includes three-level pre-amplification stage and one-level main amplifier stage.
In some embodiments, described three-level pre-amplification stage includes pumping LD, gain fibre, reverse bundling device, stripping
Device and bandpass filter.Described pump light source LD is used for providing pump light.Described gain fibre is used for providing gain media.Described
Reversely bundling device is used for closing described pump signal light and described spread laser pulse and restraints in described gain fibre.Described stripping
Device is used for removing the remaining pump light of covering and covering transmission signal light.Described bandpass filter is used for filtering Amplified Spontaneous spoke
Penetrate.
In some embodiments, described chirped pulse amplification system includes high power isolator and Tap coupler.
In some embodiments, described one-level main amplifier stage include pumping LD array, gain fibre, reverse bundling device,
Photospallation device and collimating mirror.Described pumping LD array is used for providing pump light.Described gain fibre is used for providing gain media.Institute
State stripper to be used for removing the remaining pump light of covering and covering transmission signal light.Described collimating mirror is used for amplifying described broadening
Pulse is changed into collimated light beam output.
In some embodiments, described three-level pre-amplification stage and one-level main amplifier stage are all by the way of backward pump.
In some embodiments, described pulse shortener includes the highdensity transmission grating of high dispersion.
In some embodiments, described pulse shortener includes reflection-type blazed diffraction grating pair.
In some embodiments, described pulse shortener includes multi-layer dielectric gratingses.
In some embodiments, described pulse shortener includes prism pair.
The chirped pulse amplification system of embodiment of the present invention, semiconductor laser is provided femtosecond as pulse seed source
Laser pulse signal, due to can change the output work of semiconductor laser by changing the driving current of semiconductor laser
Rate, thus mean power can be obtained from 100 to a kilowatt adjustable linear polarization chirped pulse amplification system.Backward using three-level
Pumping pre-amplification stage structure and one-level backward pump main amplifier stage structure, not only can realize the amplification of pulsed laser energy, also
Nonlinear effect can be suppressed.Additionally, the chirped pulse amplification system of embodiment of the present invention is all optical fibre structure, structure letter
Single, mean power is high, stablize, pumping efficiency is high, easy to adjust and be easy to optical fiber and couple.
The additional aspect of the present invention and advantage will be set forth in part in the description, and partly will become from the following description
Obtain substantially, or recognized by the practice of the present invention.
Brief description
The above-mentioned and/or additional aspect of the present invention and advantage will become from reference to the description to embodiment for the accompanying drawings below
Substantially with easy to understand, wherein：
Fig. 1 is the high-level schematic functional block diagram of the chirped pulse amplification system according to embodiment of the present invention.
Fig. 2 is the light path schematic diagram of the pulse stretcher of the chirped pulse amplification system according to embodiment of the present invention.
Fig. 3 is that the functional module of the three-level pre-amplification stage of the chirped pulse amplification system according to embodiment of the present invention is illustrated
Figure.
Fig. 4 is the structural representation of the first order pre-amplification stage of the chirped pulse amplification system according to embodiment of the present invention
Figure.
Fig. 5 is the structural representation of the second level pre-amplification stage of the chirped pulse amplification system according to embodiment of the present invention
Figure.
Fig. 6 is the structural representation of the third level pre-amplification stage of the chirped pulse amplification system according to embodiment of the present invention
Figure.
Fig. 7 is the structural representation of the one-level main amplifier stage of the chirped pulse amplification system according to embodiment of the present invention.
Fig. 8 is the light path schematic diagram of the pulse shortener of the chirped pulse amplification system according to embodiment of the present invention.
Major components and symbol description：
Chirped pulse amplification system 100, pulse seed source 11, protect inclined isolator 12, pulse stretcher 13, circulator 131,
Chirp Bragg grating 132, pulse amplifier 14, three-level pre-amplification stage 141, first order pre-amplification stage 1411, mode pump
LD14111, single cladding gain optical fiber 14112, wavelength division multiplexer (WDM) 14113, stripper 14114, bandpass filter 14115,
Isolator 14116, second level pre-amplification stage 1413, multimode pumping LD14131, large mode field double clad gain fibre 14132, (1+
1) * 1 bundling device 14133, stripper 14134, bandpass filter 14135, isolator 14136, third level pre-amplification stage 1415, many
Mould pumping LD14151, large mode field double clad gain fibre 14152, (2+1) * 1 bundling device 14153, stripper 14154, band logical filter
Ripple device 14155, isolator 14156, high power isolator 15, Tap coupler 16, pulse monitor 17, one-level main amplifier stage
143rd, high power pumping LD array 1431, large mode field double clad gain fibre 1432, (6+1) * 1 bundling device 1433, stripper
1434th, collimating mirror 1435, pulse shortener 18,1/2nd slides 181, the first high reflective mirror 182, the first transmission grating 183,
Two transmission gratings 184, the second high reflective mirror 185.
Specific embodiment
Embodiments of the present invention are described below in detail, the example of described embodiment is shown in the drawings, wherein ad initio
To the element that same or similar label represents same or similar element or has same or like function eventually.
Embodiment below with reference to Description of Drawings is exemplary, is only used for explaining the present invention, and is not understood that
For limitation of the present invention.
In describing the invention, it should be noted that unless otherwise clearly defined and limited, term " being connected ", " company
Connect " should be interpreted broadly, for example, it may be being fixedly connected or being detachably connected, or it is integrally connected；It can be machine
Tool connects or electrically connects or can mutually communicate；Can be to be joined directly together it is also possible to pass through the indirect phase of intermediary
Even, can be the connection of two element internals or the interaction relationship of two elements.For those of ordinary skill in the art
For, above-mentioned term concrete meaning in the present invention can be understood as the case may be.
Following disclosure provides many different embodiments or example for realizing the different structure of the present invention.In order to
Simplify disclosure of the invention, hereinafter the part and setting of specific examples is described.Certainly, they are only merely illustrative, and
And purpose does not lie in the restriction present invention.Additionally, the present invention can in different examples repeat reference numerals and/or reference letter,
This repeat to be for purposes of simplicity and clarity, itself do not indicate discussed various embodiment and/or setting between
Relation.Additionally, the invention provides various specific technique and material example, but those of ordinary skill in the art are permissible
Recognize the application of other techniques and/or the use of other materials.
Refer to Fig. 1, the chirped pulse amplification system 100 of embodiment of the present invention includes pulse seed source 11, pulse exhibition
Wide device 13, pulse amplifier 14 and pulse shortener 18.Pulse seed source 11 is used for producing femto-second laser pulse, pulse stretcher
13 are used for broadening femto-second laser pulse for stretched pulse, and pulse amplifier 14 is used for amplifying the power of stretched pulse to produce broadening
Amplify pulse, it is to amplify femtosecond pulse that pulse shortener 18 is used for compress broadening amplifying pulse.
Chirped pulse amplification system 100 is a kind of important technical obtaining high energy pulse, in pulse amplifying process
In, the high-peak power in order to avoid femtosecond pulse breaks laser instrument, will be first by pulse exhibition before pulse signals are amplified
Width arrives nanoscale or Subnano-class, the energy of dispersion laser seed pulse, is concentrated energy after amplification again.So, warble
Pulse seed source 11 in pulse amplification system 100 provides low-energy femtosecond bandwidth seed pulse signal, laser pulse passages through which vital energy circulates
Rush the broadening that stretcher 13 carries out in time domain, now the intensity of laser pulse is greatly lowered, and pulsed laser energy can be effective
Be exaggerated and have and will not damage optical element.After laser pulse after broadening enters pulse amplifier 14, carry out with pump light
Coupling, realizes the amplification of energy.Amplified laser pulse finally via pulse shortener 18, bandwidth reduction is returned original
Value, is derived from the femto-second laser pulse of very high peak power.
In some embodiments, pulse seed source 11 includes semiconductor laser, and semiconductor laser provides femtosecond to swash
Light pulse.
Semiconductor laser utilizes semiconductor substance in the transition luminescence of energy interband, is formed with the cleavage surface of semiconductor crystal
Two parallel reflective faces, as speculum, form resonator, make light generation, feedback, and the radiation producing light is amplified, and exports laser.
Semiconductor laser small volume, lightweight, operating reliability, little power consumption, high power, driving power supply simply and do not need high voltage,
Being suitable as pulse seed source 11 provides laser pulse signal.
In some embodiments, semiconductor laser includes pulsed drive or two kinds of mode of operations of DC driven.
Semiconductor laser can adopt pulse drive mode, allow and flow through the current impulse of semiconductor laser and realize arteries and veins
Punching drives.The driving method of semiconductor laser may also be employed current-injection type, when Injection Current is more than threshold current, radiation
Power promptly increases with the increase of electric current.Therefore, it can adjust it by changing the Injection Current of semiconductor laser
The luminous power of output.The current-injection type of semiconductor laser drives and requires input current to have higher stability, just can make half
Conductor laser obtains stable light pulse signal output, and this is accomplished by being driven using constant-current source.Control in constant-current source and drive
In dynamic working method, being fed back to current driver unit by current sample provides Active control, the minimum so that electric current drifts about
And make semiconductor laser output stability maximum, to use cooperatively effect more preferable with temperature control.So, semiconductor laser
Can be with the preferable femto-second laser pulse of output stability.
In some embodiments, semiconductor laser includes laser diode.
Laser diode is used for providing light pulse signal for semiconductor laser, and it has small volume, lightweight, power consumption
Low, drive circuit is simple, modulation is convenient, mechanical resistant impact and the advantages of anti-vibration.So, using laser diode for partly leading
Body laser provides laser pulse signal, and semiconductor laser can be made to have more stable performance.
In some embodiments, the wavelength of laser diode is 1030-1080 nanometer.
Wavelength is that in the laser diode of 1030-1080 nanometer, the laser diode with wavelength 1064nm is optimal.
The laser diode of 1064nm is Nd:YAG Solid State Laser diode, the laser coherence of its transmitting and good directionality, brightness are high,
And short preparation period, low production cost, quality controllability be strong, freedom shape is big.
In some embodiments, semiconductor laser includes thermistor and semiconductor cooler.Thermistor is used for
The temperature of detection semiconductor laser.Semiconductor cooler is used for according to the temperature refrigeration detecting or heats so that described partly lead
The operating temperature of body laser maintains in predetermined temperature range.
Semiconductor laser is a kind of temperature sensor, and it is bright that small temperature change can make laser output wavelength produce
Aobvious change, and chirped pulse amplification system 100 requires semiconductor laser to be operated in constant fixed wave length state, this will
Noise spectra of semiconductor lasers is asked to carry out the temperature control of precision.Generally, semiconductor laser requires to be operated in 25 DEG C of states and positive and negative 0.1 DEG C
Constant-temperature precision.Thermistor has the advantages that size is little, easy to use, good stability, sensitivity are high.So, can be used as half
The temperature-sensing element of conductor laser, the temperature of noise spectra of semiconductor lasers is monitored.If the operating temperature of semiconductor laser is not
It is in predetermined temperature range, then can carry out temperature adjustment using semiconductor cooler noise spectra of semiconductor lasers.
In some embodiments, the resistance of described thermistor is 10-50 kilohm.
In practice, the Standard resistance range that thermistor is set up is 10-50 kilohm.Wherein, with resistance for 25 kilo-ohms
The thermistor of nurse is the most commonly used.
In some embodiments, pulse seed source 11 includes the mode locking pulse optical fiber laser of all -fiber.
Locked mode is exactly to fix the initial phase relation of longitudinal mode each in Multi-Longitudinal Mode laser, forms the light pulse of constant duration
Sequence.Make each longitudinal mode synchronous in time, frequency interval also keeps certain, then laser instrument is by extremely narrow for output pulse width, peak power
Very high ultrashort pulse.The Mode-locked laser device high conversion efficiency of all -fiber, perfect heat-dissipating and compact conformation, can export
Stable ultrashort laser pulse signal.So, it is possible to obtain stable femto-second laser pulse signal, and due to mode locking pulse optical fiber
Laser instrument is all optical fibre structure, has the advantages that structure is simple and is easy to optical fiber and couples.
Referring again to Fig. 1, the chirped pulse amplification system 100 of embodiment of the present invention also includes protecting inclined isolator 12.
Because the reverse transfers light that a variety of causes produces can exert an adverse impact to light source and light path system in light path.
Protect inclined isolator 12 and can isolate the light by optical fiber echo reflection.So, the echo in light path can be avoided to light source, pumping
Source and other luminescent devices interfere and injure.
Refer to Fig. 2, the pulse stretcher 13 of embodiment of the present invention includes circulator 131 and Chirp Bragg grating
132.Circulator is used for changing the direction of propagation of femto-second laser pulse.Chirp Bragg grating is used for femto-second laser pulse broadening
For stretched pulse.
Circulator 131 is a multiport device, can only be along one direction annular via electromagnetic wave in circulator 131.As
This, can change the propagation side entering into the femto-second laser pulse in circulator 131 via guarantor's isolation partially using circulator 131
To making femto-second laser pulse enter in Chirp Bragg grating 132.
Chirp Bragg grating 132 is the scale engraving unequal-interval in inside of optical fibre, and femto-second laser pulse is through cloth of warbling
After glug grating 132, in pulse, diverse location in grating for the light of different wave length meets Bragg condition and is reflected, and
Time delay time delay is produced, ruddiness can leave pulse stretcher 13 prior to blue light, and seed pulse has just obtained initial exhibition between different wave length
Wide.So, realize the broadening of the pulse width of femto-second laser pulse using Chirp Bragg grating 132, the arteries and veins after broadening
Rush the various nonlinear effects that peak power is low, will not damage optical element and be avoided that pulsed light too strong and produce.
In some embodiments, described circulator 131 includes first end, the second end and the 3rd end.First end is used for connecing
Receive the femto-second laser pulse being exported by the inclined isolator 12 of guarantor.Second end is used for exporting femto-second laser pulse to Chirp Bragg light
Grid 132 simultaneously receive by the stretched pulse of Chirp Bragg grating 132 broadening.3rd end is used for exporting stretched pulse.
In some embodiments, pulse amplifier 14 includes three-level pre-amplification stage 141 and one-level main amplifier stage 143.
Power amplification multiple due to femto-second laser pulse is limited, so, using three-level pre-amplification stage 14 and one-level
Main amplifier stage 18, can either make the power of femto-second laser pulse be amplified to greatest extent, can avoid putting using more again
Cost increase and the problem of complex structure that big series brings.
Refer to Fig. 3 to Fig. 6, the three-level pre-amplification stage 141 of embodiment of the present invention include first order pre-amplification stage 1411,
Second level pre-amplification stage 1413, third level pre-amplification stage 1415.Every one-level pre-amplification stage all includes the pump for providing pump light
Pu LD, for providing the gain fibre of gain media, restrainting in gain fibre for closing pump light and spread laser pulse
Reversely bundling device, for remove the stripper of the remaining pump light of covering and covering transmission signal light and being used for filter amplification from
Send out the bandpass filter of radiation.
So, after spread laser pulse is via circulator 131 three-polar output, using the reverse bundling device of pump light and pump
The pump light that Pu LD provides carries out closing bundle, closes the optical signal after bundle and enters in the gain fibre providing gain media.Broadening swashs
When light pulse is propagated in the gain medium, because of the generation of stimulated radiation, the energy level transition that can realize particle is particle to gain media
Number reversion, spread laser pulse can absorb the particle of these high levels and realize the amplification of energy.Wherein, provided by pump light
Encourage and to realize and to maintain the reversion of population.
Specifically, enter in first order pre-amplification stage 1411 via the spread laser pulse of pulse stretcher 13 output, first
First remove covering transmission signal light via stripper 14114, recycle wavelength division multiplexer (WDM) 14113 by spread laser pulse
Reversely close in Shu Jindan cladding gain optical fiber 14112 with 976 nanometers of pump lights of 976 nanometers of mode pump LD1421 offer,
After realizing the amplification of power in gain fibre, output is amplified spread laser pulse entrance bandpass filter 14115 and is filtered amplification
Exported after spontaneous radiation, then the light via isolator 14116 separating echo reflection.One-level pre-amplification broadening after output swashs
Light pulse enters second level pre-amplification stage 1413, after stripper 14134, using (1+1) * 1 bundling device 14133, one-level is pre-
976 nanometers of pump lights of amplification spread laser pulse and 976 nanometers of multimode pumping LD1441 offers reversely close to be restrainted into large mode field pair
In cladding gain optical fiber 14132, and carry out power amplification, the pulse signal after amplification sequentially passes through bandpass filter 14135 He
Third level pre-amplification stage 1415 is exported after isolator 14136.Two grades of pre-amplification spread laser pulses after output are via stripping
After device 14154, using (2+1) * 1 bundling device 14153 by two grades of pre-amplification spread laser pulses and two 976 nanometers of multimode pumpings
Two 976 nanometers of pump lights of bundle that LD14151 provides reversely close to be restrainted in large mode field double clad gain fibre 14152, then warp successively
Export after crossing bandpass filter 14155 and isolator 14156, realize the three-level pre-amplification of spread laser pulse.
Because pump light is exponentially decayed along shaft axis of optic fibre in doubly clad optical fiber, for the rear-earth-doped light of finite length
Fibre, pump light can not possibly be completely absorbed and form residual pump light.Pay no attention to when thinking of welding additionally, due to fused fiber splice effect
The problems such as pattern match, also results in flashlight and is leaked to covering from fibre core, forms the flashlight of covering transmission.For multikilowatt
Above high-capacity optical fiber laser, the flashlight of residual pump light and covering transmission is larger, if not being acted upon, can be to sharp
Light device device, laser output mode and stability cause larger infringement, or even burn laser instrument.Covering photospallation therefore can be utilized
Device removes the remaining pump light of covering and covering transmission signal light.In amplification process, because the gain of gain media is very high, it is situated between
Spontaneous radiation in matter will be amplified and produce amplified spontaneous emission.Due to the presence of amplified spontaneous emission, will be in signal
Light consumes the reversion particle of energy level on gain media before reaching, so that flashlight cannot be effectively amplified, this is not only serious
Reduce the multiplication factor of flashlight, also can bring very strong ambient noise.Therefore, can be filtered these using narrow band filter
Lightwave signal after spontaneous amplification radiation.
Referring again to Fig. 1, the chirped pulse amplification system 100 of embodiment of the present invention includes high power isolator 15 He
Tap coupler 16.
So, using the light of high power isolator 15 separating echo reflection again.And it is defeated via high power isolator 15
The laser pulse going out enters 1:99 Tap coupler 16.Laser pulse is split by Tap coupler 16, and 99% broadening is put
Big pulse enters one-level main amplifier stage 143, and 1% broadening amplifies pulse beam splitting and is used for monitoring in pulse monitor 17.
Refer to Fig. 7, in embodiments of the present invention, one-level main amplifier stage 143 include pumping LD array, gain fibre,
Reversely bundling device, stripper and collimating mirror.Pumping LD array is used for providing pump light.Gain fibre is used for providing gain media.
Stripper is used for removing the remaining pump light of covering and covering transmission signal light.Collimating mirror is used for for broadening amplification pulse being changed into flat
Row light beam exports.
Main amplifier stage can be carried out further to the power of three-level pre-amplification spread laser pulse using pumping LD array
Amplify, be greatly enhanced multiplication factor.Amplification spread laser pulse can be changed into collimated light beam and be exported by collimating mirror, be easy to
Pulse compression afterwards.
Specifically, enter one-level main amplifier stage via the three-level pre-amplification spread laser pulse of three-level pre-amplification 141 output
143, after stripper 1434, using (6+1) * 1 bundling device 1433 by three-level pre-amplification spread laser pulse with by two 976
976 nanometers of coupling pump light that nanometer high power pumping LD array 1431 provides enter to carry out power in double clad gain fibre 1432
Amplify, finally via collimating mirror 1435, the spread laser pulse after amplifying is exported.Wherein, each 976 nanometers high-power
Pumping LD array 1431 includes 3 976 nanometers of multimode pumping LD.
In some embodiments, three-level pre-amplification stage 141 and one-level main amplifier stage 143 adopt backward pump mode.
Backward pump mode has the advantages that noise is low, polarization independent is little.And the fluctuation of the pump light of forward pumping can
Be transferred to flashlight to a great extent, be equivalent to and introduce noise, simultaneously because the presence of polarization mode dispersion make flashlight and
The polarization state of pump light changes relatively, and compared with backward pump, gain is less, is not used in a lot of situations.So, profit
Use backward pump mode, it is possible to obtain higher gain, lower noise.
Refer to Fig. 8, the pulse shortener 18 in embodiment of the present invention includes the highdensity transmission grating of high dispersion.High
The structure of the highdensity transmission grating of dispersion specifically includes 1/2nd slides 181, the first high reflective mirror 182, the first transmission grating
183rd, the second transmission grating 184 and the second high reflective mirror 185.
Broadening after amplifying via pulse amplifier amplifies pulse and first adjusts polarization state via 1/2nd plectrum 181, then
Inject tilted-putted first high reflective mirror 182 of 45° angle.Wherein, the first high reflective mirror 182 tilting 45° angle placement is used for one
Broadening is divided to amplify pulse separation to pulse monitor 17.Amplify pulse via the broadening after the first high reflective mirror 182 to inject successively
First transmission grating 183 and the second transmission grating 184.First transmission grating 183 and the grating pair of the second transmission grating 184 composition
A group velocity dispersion can be provided as dispersive delay line.When optical pulse strikes are to the first transmission grating 183, pulse
Different frequency component diffraction at slightly different angles.When the different components of pulse reach the second transmission grating 184, respectively hang oneself
Go through different time delays, blue shift component reaches in advance than red-shifted component.For positive chirped pulse, the rear edge of pulse produces blue shift
Component, and forward position produces red-shifted component.So, when grating pair is passed through in pulse, afterwards along catching up with forward position, pulse is compressed.?
Reflect 185 by the second high reflective mirror afterwards, return from original optical path.The highdensity transmission grating of high dispersion is to can be with less grating space
Larger group velocity dispersion is provided.
In some embodiments, pulse shortener 18 can be entered to amplifying stretched pulse using reflection-type blazed diffraction grating
Row compression.
Reflectivity blazed diffraction grating is to the compression that not only can realize pulse, and the cutting indentation of its grating, leads to
Cross the angle controlling between cutting plane and grating planar, each cutting plane can be enable to be concentrated luminous energy, reduce energy
Loss.
In some embodiments, pulse shortener 18 can be realized amplifying the pressure of stretched pulse using multi-layer dielectric gratingses
Contracting.
Because the power of broadening amplification pulse is very high, therefore its pulse shortener 18 should have very high damage threshold.
Multi-layer dielectric gratingses are making relief gratings on multilayer dielectricity highly reflecting films, take full advantage of the high reflection of multilayer dielectric film
Characteristic and grating diffration characteristic, have the advantages that diffraction efficiency is high, damage threshold is high and uniformity is good.So, can prevent greatly
The amplification stretched pulse of power to grating to cause damage.
In some embodiments, pulse shortener 18 can be using prism to the compression realizing amplification stretched pulse.
When entering the first prism containing the pulse just warbled, the light of different wave length has different refraction angles, after light beam dispersion
Enter the second prism, because the wavelength ratio ruddiness of blue light is little, using negative GVD, blue light components are than the refraction of red light component
Rate is little, so ruddiness light path is more than blue light light path, therefore, compensate for effect of dispersion so that pulse width is compressed.Prism is not only
Achievable pulse compression, and there is the simple feature of structure.
In the description of this specification, reference term " embodiment ", " some embodiments ", " schematically enforcement
The description of mode ", " example ", " specific example " or " some examples " etc. means to describe with reference to described embodiment or example
Specific features, structure, material or feature are contained at least one embodiment or the example of the present invention.In this specification
In, identical embodiment or example are not necessarily referring to the schematic representation of above-mentioned term.And, the concrete spy of description
Levy, structure, material or feature can combine in any one or more embodiments or example in an appropriate manner.
Although embodiments of the present invention have been shown and described above it is to be understood that above-mentioned embodiment is
Exemplary it is impossible to be interpreted as limitation of the present invention, those of ordinary skill in the art within the scope of the invention can be right
Above-mentioned embodiment is changed, changes, replacing and modification.
Claims (20)
1. a kind of chirped pulse amplification system, for optical fiber laser it is characterised in that described chirped pulse amplification system bag
Include：
Pulse seed source, described pulse seed source is used for producing femto-second laser pulse；
Pulse stretcher, it is stretched pulse that described pulse stretcher is used for femto-second laser pulse described in broadening；
Pulse amplifier, described pulse amplifier is used for amplifying the power of described stretched pulse to produce broadening amplification pulse；And
Pulse shortener, it is to amplify femtosecond pulse that described pulse shortener is used for compress described broadening amplifying pulse.
2. chirped pulse amplification system as claimed in claim 1 it is characterised in that described pulse seed source include semiconductor swash
Light device.
3. chirped pulse amplification system as claimed in claim 2 is it is characterised in that described semiconductor laser includes pulse drive
Move or two kinds of mode of operations of DC driven.
4. chirped pulse amplification system as claimed in claim 2 is it is characterised in that described semiconductor laser includes laser two
Pole pipe.
5. chirped pulse amplification system as claimed in claim 4 is it is characterised in that the wavelength of described laser diode is
1030-1080 nanometer.
6. chirped pulse amplification system as claimed in claim 4 is it is characterised in that described semiconductor laser also includes：
Thermistor, described thermistor is used for detecting the temperature of described semiconductor laser；And
Semiconductor cooler, described semiconductor cooler is used for according to described temperature refrigeration or heats so that described semiconductor laser
The operating temperature of device maintains in predetermined temperature range.
7. chirped pulse amplification system as claimed in claim 6 is it is characterised in that the resistance of described thermistor is 10-50
Kilohm.
8. chirped pulse amplification system as claimed in claim 1 is it is characterised in that described pulse seed source includes all -fiber
Mode locking pulse optical fiber laser.
9. chirped pulse amplification system as claimed in claim 1 is it is characterised in that described chirped pulse amplification system includes：
Protect inclined isolator, the inclined isolator of described guarantor is used for receiving by the described femto-second laser pulse of described pulse seed source output.
10. chirped pulse amplification system as claimed in claim 1 is it is characterised in that described pulse stretcher includes：
Circulator, described circulator is used for changing the direction of propagation of described femto-second laser pulse；And
Chirp Bragg grating, the described femtosecond laser that described Chirp Bragg grating exports via described circulator for broadening
Pulse.
11. chirped pulse amplification systems as claimed in claim 10 are it is characterised in that described circulator includes：
First end, described first end is used for receiving by the described described femto-second laser pulse protecting inclined isolator output；
Second end, described second end is used for exporting described femto-second laser pulse to described Chirp Bragg grating and receiving by institute
State the described stretched pulse of Chirp Bragg grating stretching；And
3rd end, described 3rd end is used for exporting described stretched pulse to described pulse amplifier.
12. chirped pulse amplification systems as claimed in claim 1 it is characterised in that described pulse amplifier to include three-level pre-
Amplifying stage and one-level main amplifier stage.
13. chirped pulse amplification systems as claimed in claim 12 are it is characterised in that described three-level pre-amplification stage includes：
Pumping LD, described pump light source LD is used for providing pump light；
Gain fibre, described gain fibre is used for providing gain media；
Reversely bundling device, described reverse bundling device is used for closing described pump light and described spread laser pulse to be restrainted into described gain
In optical fiber；
Stripper, described stripper is used for removing the remaining pump light of covering and covering transmission signal light；And
Bandpass filter, described bandpass filter is used for filtering amplified spontaneous emission.
14. chirped pulse amplification systems as claimed in claim 1 are it is characterised in that described chirped pulse amplification system includes
High power isolator and Tap coupler.
Chirped pulse amplification system described in 15. claims 12 is it is characterised in that described one-level main amplifier stage includes：
Pumping LD array, described pumping LD array is used for providing pump light；
Gain fibre, described gain fibre is used for providing gain media；
Reversely bundling device, described reverse bundling device is used for closing described pump light and described spread laser pulse to be restrainted into described gain
In optical fiber；
Stripper, described stripper is used for removing the remaining pump light of covering and covering transmission signal light；And
Collimating mirror, described collimating mirror is used for for the amplification pulse of described broadening being changed into collimated light beam output.
16. chirped pulse amplification systems as described in claim 13 or 15 are it is characterised in that described three-level pre-amplification stage and one
Level main amplifier stage is all by the way of backward pump.
17. chirped pulse amplification systems as claimed in claim 1 are it is characterised in that described pulse shortener includes high dispersion
Highdensity transmission grating.
18. chirped pulse amplification systems as claimed in claim 1 are it is characterised in that described pulse shortener includes reflection-type
Blazed diffraction grating pair.
19. chirped pulse amplification systems as claimed in claim 1 are it is characterised in that described pulse shortener includes multilayer Jie
Plasma membrane grating.
20. chirped pulse amplification systems as claimed in claim 1 are it is characterised in that described pulse shortener includes prism pair.
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| CN109004500A (en) * | 2018-07-13 | 2018-12-14 | 武汉安扬激光技术有限责任公司 | A kind of high power Fs chirp amplification laser with fiber optic conduction output |
| CN109286120A (en) * | 2018-11-13 | 2019-01-29 | 深圳市杰普特光电股份有限公司 | A kind of polarization-maintaining fiber laser |
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| CN109286120A (en) * | 2018-11-13 | 2019-01-29 | 深圳市杰普特光电股份有限公司 | A kind of polarization-maintaining fiber laser |
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| CN110293980A (en) * | 2019-07-05 | 2019-10-01 | 山东大学 | A kind of tank railway transportation entrucking localization method and system |
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| CN111162435A (en) * | 2020-01-02 | 2020-05-15 | 北京信息科技大学 | Full-polarization-maintaining femtosecond fiber laser system |
| CN111490439B (en) * | 2020-03-16 | 2022-04-22 | 华南理工大学 | High-power high-repetition-frequency pulse-width-adjustable ultrafast laser system |
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| CN112803234B (en) * | 2021-01-17 | 2023-02-07 | 北京工业大学 | All-fiber chirped pulse amplification system of self-similar pulse shaping stretcher based on Raman gain |
| CN112803234A (en) * | 2021-01-17 | 2021-05-14 | 北京工业大学 | Raman gain-based all-fiber chirped pulse amplification system of self-similar pulse shaping stretcher |
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