CN106409922A - Crystalline silicon flexible battery and manufacturing method thereof - Google Patents
Crystalline silicon flexible battery and manufacturing method thereof Download PDFInfo
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- CN106409922A CN106409922A CN201610874534.6A CN201610874534A CN106409922A CN 106409922 A CN106409922 A CN 106409922A CN 201610874534 A CN201610874534 A CN 201610874534A CN 106409922 A CN106409922 A CN 106409922A
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- 229910021419 crystalline silicon Inorganic materials 0.000 title abstract description 6
- 238000004519 manufacturing process Methods 0.000 title abstract description 4
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 87
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 84
- 239000010703 silicon Substances 0.000 claims abstract description 81
- 229910004205 SiNX Inorganic materials 0.000 claims abstract description 27
- 238000000034 method Methods 0.000 claims abstract description 24
- 238000002161 passivation Methods 0.000 claims abstract description 24
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 17
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 17
- 239000000758 substrate Substances 0.000 claims abstract description 14
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims abstract description 7
- 238000005530 etching Methods 0.000 claims abstract description 6
- 239000013078 crystal Substances 0.000 claims description 37
- 238000002360 preparation method Methods 0.000 claims description 19
- 239000010409 thin film Substances 0.000 claims description 16
- 238000009792 diffusion process Methods 0.000 claims description 15
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl trichloride Chemical compound ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 claims description 12
- 239000010408 film Substances 0.000 claims description 11
- 229910019213 POCl3 Inorganic materials 0.000 claims description 6
- 239000004411 aluminium Substances 0.000 claims description 6
- 238000003486 chemical etching Methods 0.000 claims description 6
- 238000001035 drying Methods 0.000 claims description 6
- 229910052757 nitrogen Inorganic materials 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 4
- 238000005245 sintering Methods 0.000 claims description 4
- 230000005540 biological transmission Effects 0.000 claims description 3
- 125000000118 dimethyl group Chemical group [H]C([H])([H])* 0.000 claims description 3
- 229920005573 silicon-containing polymer Polymers 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 claims description 2
- 238000000576 coating method Methods 0.000 claims description 2
- 238000005538 encapsulation Methods 0.000 claims description 2
- 238000005452 bending Methods 0.000 abstract description 10
- 238000006243 chemical reaction Methods 0.000 abstract description 6
- 230000031700 light absorption Effects 0.000 abstract description 6
- 238000007747 plating Methods 0.000 abstract description 3
- 238000010521 absorption reaction Methods 0.000 abstract description 2
- 229920006280 packaging film Polymers 0.000 abstract 2
- 239000012785 packaging film Substances 0.000 abstract 2
- 239000006185 dispersion Substances 0.000 abstract 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 abstract 1
- 238000004806 packaging method and process Methods 0.000 abstract 1
- 230000005611 electricity Effects 0.000 description 6
- 230000006798 recombination Effects 0.000 description 4
- 238000005215 recombination Methods 0.000 description 4
- 239000004205 dimethyl polysiloxane Substances 0.000 description 3
- 235000013870 dimethyl polysiloxane Nutrition 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- CXQXSVUQTKDNFP-UHFFFAOYSA-N octamethyltrisiloxane Chemical compound C[Si](C)(C)O[Si](C)(C)O[Si](C)(C)C CXQXSVUQTKDNFP-UHFFFAOYSA-N 0.000 description 3
- 238000004987 plasma desorption mass spectroscopy Methods 0.000 description 3
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 description 3
- 208000037656 Respiratory Sounds Diseases 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- ZWNQSJPQMSUVSE-UHFFFAOYSA-N [Cu].[Sn].[In] Chemical compound [Cu].[Sn].[In] ZWNQSJPQMSUVSE-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- VQLYBLABXAHUDN-UHFFFAOYSA-N bis(4-fluorophenyl)-methyl-(1,2,4-triazol-1-ylmethyl)silane;methyl n-(1h-benzimidazol-2-yl)carbamate Chemical compound C1=CC=C2NC(NC(=O)OC)=NC2=C1.C=1C=C(F)C=CC=1[Si](C=1C=CC(F)=CC=1)(C)CN1C=NC=N1 VQLYBLABXAHUDN-UHFFFAOYSA-N 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
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Abstract
The invention discloses a crystalline silicon flexible battery and a manufacturing method thereof. The crystalline silicon flexible battery comprises a packaging film and a battery assembly arranged in the packaging film, wherein the battery assembly consists of an aluminum back electrode layer, a monocrystalline silicon substrate layer, a cylindrical silicon array structural layer, a PN junction layer, an SiNx passivation layer and an ITO (Indium Tin Oxide) film layer in sequence from top to bottom. The manufacturing method comprises the following steps: (1) performing chimerical etching; (2) performing dispersion to obtain a PN junction; (3) making an SiNx passivation layer; (4) plating an ITO film layer; (5) etching a silicon back side; (6) plating an aluminum back electrode; and (7) performing packaging. The crystalline silicon flexible battery manufactured by the method has a good light trapping structure, a large light absorption angle, a small photon-generated carrier absorption length, high light absorption efficiency, high photo-electric conversion efficiency and superior bending performance.
Description
Technical field
The invention belongs to photovoltaic art is and in particular to a kind of crystal silicon flexible battery and preparation method thereof.
Background technology
Solar cell on the market is difficult to combine flexible, efficient and high battery life at present.Conventional crystalline silicon
Battery has higher battery efficiency and stability and battery life, but after making flexible battery, in the process repeatedly bending
In crackle and fragment easily occur, repeatedly bending property bad.And new solar cell such as DSSC, copper
Indium tin solar cell etc., can make and have the flexible battery repeatedly bending, but the life-span of these batteries and stability are all
Poor.Therefore, not only stability and life-span are high to seek one kind, and the good solar cell of bending performance becomes when business repeatedly
Anxious.
Content of the invention
The technical problem to be solved in the present invention is to overcome the deficiencies in the prior art, provide one kind have good light trapping structure and
Big light absorbs angle, the crystalline substance that free-carrier-absorptio length is short, efficiency of light absorption is high, electricity conversion is high and bending performance is excellent
Silicon flexible battery and preparation method thereof.
For solving above-mentioned technical problem, the present invention employs the following technical solutions：
A kind of crystal silicon flexible battery, described crystal silicon flexible battery includes encapsulating film and the battery component in encapsulating film,
Described battery component from the bottom to top successively by aluminum back electrode layer, monocrystal silicon substrate layer, cylindrical silicon array structure layer, PN junction layer,
SiNx passivation layer and ito thin film layer composition.
It is preferred that a diameter of the 1 of the array element of described cylindrical silicon array structure layer in above-mentioned crystal silicon flexible battery
μm～2 μm, a height of 2 μm～4 μm of array element, the center distance between adjacent array element is 3 μm～8 μm；And/or, institute
The junction depth stating PN junction layer is 0.2 μm～0.42 μm；And/or, in described SiNx passivation layer, the atomic ratio (i.e. 1/x) of Si and N exists
Between 0.743 and 1.014, the thickness of described SiNx passivation layer is 50nm～80nm.
It is preferred that the thickness of described monocrystal silicon substrate layer is 20 μm～100 μm in above-mentioned crystal silicon flexible battery；With/
Or, the light transmission rate T ＞ 90% of described ito thin film layer, electricalresistivityρ ＜ 4 × 10-4Ω cm, refractive index n is 2.1～2.5.
As a total technology design, present invention also offers a kind of preparation method of above-mentioned crystal silicon flexible battery,
Comprise the following steps：
(1) chemical etching：Carry out chemical etching on the monosilicon, etch cylindrical silicon array structure, obtain cylinder
Silicon array structure layer；
(2) spread：On cylindrical silicon array structure layer, PN junction is prepared using diffusion technique, obtain PN junction layer；
(3) prepare SiNx passivation layer：PN junction layer adopt pecvd process prepare SiNx passivation layer；
(4) plate ito thin film layer：SiNx passivation layer adopts pecvd process plate ito thin film, obtain ito thin film layer (i.e.
Sn doping In2O3Film)；
(5) etch the silicon back side：The monocrystalline silicon back side retaining in step (1) performs etching cuts thin, obtains monocrystal silicon substrate layer；
(6) aluminize back electrode：In the back side serigraphy aluminium paste of monocrystal silicon substrate layer, sintered after, obtain aluminum back electrode
Layer；
(7) encapsulate：The battery component of each structure sheaf composition that step (1)～(6) are prepared respectively is packaged, and obtains crystalline substance
Silicon flexible battery.
It is preferred that in described step (2), described diffusion technique includes in the above-mentioned preparation method of crystal silicon flexible battery
Following process：First in O2And N2Aoxidize 3min～5min in atmosphere at 600 DEG C～800 DEG C, then lead to POCl3、O2And N2, expanding
Scattered temperature spreads 3min～5min at being 800 DEG C～825 DEG C, then rises high-temperature to 810 DEG C～835 DEG C, in POCl3、O2And N2Gas
In atmosphere, deep diffusion 3min～5min, pushes away deep PN junction further.
It is preferred that in described step (3) in the above-mentioned preparation method of crystal silicon flexible battery, the bar of described pecvd process
Part is：Vacuum pressure is 180Pa～230Pa, and coating temperature is 430 DEG C～450 DEG C, is passed through SiH4And NH3, SiH4With NH3Gas
Body flow-rate ratio is 4200: 500, and radio-frequency power is 3500W～4000W.
It is preferred that in described step (6), described sintering process is as follows in the above-mentioned preparation method of crystal silicon flexible battery：
First aluminium paste is dried, drying temperature is 100 DEG C～200 DEG C, drying time is 10min～20min, then at 400 DEG C～450 DEG C
Lower sintering 30min～60min, sinters 10min～25min at 600 DEG C～900 DEG C, forms Ohmic contact.
It is preferred that in described step (7), the material of described encapsulation is in the above-mentioned preparation method of crystal silicon flexible battery
Dimethyl silicone polymer (PDMS).
In the present invention, generally 20 μm～30 μm of the thickness of aluminum back electrode layer.
In the present invention, SiNx serves as the effect of passivation layer, light absorbing zone, when refractive index is minimum, between three layers of refractive index
Meet following relation：
Wherein, n1Refractive index for SiNx, n0For the refractive index of monocrystalline silicon, n0=2.39, n2Folding for encapsulating material PDMS
Penetrate rate, n2=1.40, the refractive index of SiNx, n is understood according to formula (1)1The effect optical property of=1.83 films is optimum, in order to
Improve minority carrier life time, n1Take between 1.9-2.1；
The empirical equation of the refractive index according to SiNx and Si and N element content ratio (atomic ratio)：
Si and N ratio (i.e. 1/x) is between 0.743 and 1.014.
The innovative point of the present invention is：
The present invention, on the basis of conventional crystalline silicon battery, designs a kind of brand-new crystal silicon battery structure, can be repeatedly curved
Folding, is a kind of efficient flexible battery.The present invention is a kind of solar cell of 3D structure, shape on cylindrical silicon array structure
Become PN junction, there is good sunken optical property, short free-carrier-absorptio length, high, the special 3-D micron bar knot of battery efficiency
Structure can make the bending of crystal silicon flexible battery or repeat to bend, and be difficult to crack, the impact to battery performance for the bending is very little, electricity
The pond life-span is higher.In view of crystal silicon, there is longer minority diffusion length, and silicon face has higher exciton recombination rate, therefore round
Column silicon array structure is optimized, and the yardstick of nanometer rods is scheduled on a micron order of magnitude, is so ensureing this novel battery
While there is efficiency of light absorption relatively, electricity conversion, reduce the loss causing due to surface recombination.The present invention exists
After plating transparency conducting layer ITO, have etching and cut thin process so as to more suitable for flexible battery.The present invention does not need to weld
Grating, decreases the area that adds lustre to, and simplifies preparation process, is beneficial to improve production capacity, reduces cost.
Compared with prior art, it is an advantage of the current invention that：
1st, the crystal silicon flexible battery of present invention preparation has the diverse structure design with prior art, particularly has
Special 3-D micron bar structure (i.e. cylindrical array array structure), this special 3-D micron bar structure in bending or repeats curved
It is difficult to during folding crack, the impact to battery performance for the bending is very little, and battery life is higher.
2nd, the efficiency of light absorption of the crystal silicon flexible battery of present invention preparation is higher：(1) good light trapping structure, big light are had
Absorb angle；(2) short photonic absorption length；(3) do not need grating, shading-area can be reduced.
3rd, the electricity conversion of the crystal silicon flexible battery of present invention preparation is higher：(1) short free-carrier-absorptio is long
Degree；(2) bigger PN junction area, can carry out photoelectric conversion in time；(3) silicon has longer minority diffusion length, and silicon face
Have a higher exciton recombination rate, the yardstick of therefore cylindric silicon array structure in the micron order of magnitude, so ensure this new
Battery, while having higher efficiency of light absorption, electricity conversion, reduces the loss causing due to surface recombination.
Brief description
Fig. 1 is the structural representation of the crystal silicon flexible battery of the present invention.
Marginal data：
1st, aluminum back electrode layer；2nd, monocrystal silicon substrate layer；3rd, cylindrical silicon array structure layer；4th, PN junction layer；5th, SiNx passivation
Layer；6th, ito thin film layer；7th, encapsulating film.
Specific embodiment
Below in conjunction with Figure of description and concrete preferred embodiment, the invention will be further described, but not therefore and
Limit the scope of the invention.
Material employed in following examples and instrument are commercially available.
Embodiment：
A kind of crystal silicon flexible battery of present invention, as shown in figure 1, this crystal silicon flexible battery includes encapsulating film 7 and located at envelope
Battery component in dress film 7, battery component is from the bottom to top successively by aluminum back electrode layer 1, monocrystal silicon substrate layer 2, cylindrical silicon battle array
Array structure layer 3, PN junction layer 4, SiNx passivation layer 5 and ito thin film layer 6 form.
In the present embodiment, a diameter of 1.511 μm of the array element of cylindrical silicon array structure layer 3, the height of array element
For 3.24 μm, the center distance between adjacent array element is 5.32 μm.The junction depth of PN junction layer 4 is 0.252 μm；SiNx passivation layer
In 5, the atomic ratio of Si and N is 68nm for the thickness of 0.875, SiNx passivation layer 5.
In the present embodiment, the thickness of monocrystal silicon substrate layer 2 is 55 μm；The light transmission rate T ＞ 90% of ito thin film layer 6, resistance
Rate ρ ＜ 4 × 10-4Ω cm, refractive index n is 2.1, and the thickness of aluminum back electrode layer 1 is 27 μm.
A kind of preparation method of the crystal silicon flexible battery of above-mentioned the present embodiment, comprises the following steps：
(1) chemical etching：Carry out chemical etching on the monosilicon, etch cylindrical silicon array structure, obtain cylinder
Silicon array structure layer 3；
(2) spread：On cylindrical silicon array structure layer 3, PN junction is prepared using diffusion technique, obtain PN junction layer 4；
(3) prepare SiNx passivation layer 5：PN junction layer 4 adopt pecvd process prepare SiNx passivation layer 5, wherein, Si and N
Atomic ratio be 0.875；
(4) plate ito thin film layer 6：SiNx passivation layer 5 adopts pecvd process plate ito thin film, obtain ito thin film layer 6；
(5) etch the silicon back side：The monocrystalline silicon back side retaining in step (1) performs etching cuts thin, and the thickness making monocrystalline silicon is
55 μm, obtain monocrystal silicon substrate layer 2；
(6) aluminize back electrode：The back side of monocrystal silicon substrate layer 2 adopt serigraphy brush aluminium paste, sintered after, obtain
Aluminum back electrode layer 1；Now also obtain battery component, each structure sheaf that is, prepared by step (1)～step (6) has collectively constituted electricity
Pond assembly；
(7) encapsulate：Using dimethyl silicone polymer (PDMS), battery component is packaged, formation encapsulating film 7, final
To crystal silicon flexible battery.
In the step (2) of the present embodiment, diffusion technique condition is：First by the monocrystalline silicon with cylindrical silicon array structure layer 3
In O2And N2Aoxidize 3min in atmosphere at 800 DEG C, then lead to POCl3、O2And N2, spread 5min at diffusion temperature is 825 DEG C,
Rise high-temperature again to 835 DEG C, in POCl3、O2And N2In atmosphere, deep diffusion 5min, pushes away deep PN junction further.
In the step (3) of the present embodiment, the pecvd process condition preparing SiNx passivation layer is：During step (2) is obtained
Between product put into the growth being passivated film in PECVD pipe, being evacuated to vacuum is 226.65Pa, and furnace tube temperature is risen to
430 DEG C, it is passed through SiH4And NH3, SiH4With NH3Gas flow ratio be 4200sccm: 500sccm (unit be standard per minute stand
Square centimetre), radio-frequency power is 3800W.
In the step (6) of the present embodiment, first aluminium paste is dried, drying temperature is 150 DEG C, drying time is 10min, then
Sinter 45min at 400 DEG C, at 800 DEG C, sinter 10min, form Ohmic contact.
After testing, the crystal silicon flexible battery (3-D micron bar structure) of present invention preparation in 0～60 ° of incidence angle, imitate by battery
Rate is not changed in, and common crystal silicon battery battery efficiency when incidence angle is to 60 ° declines 12%.It can be seen that the crystal silicon of the present invention is flexible
Battery has good light trapping structure and big light absorbs angle.
Common crystal silicon battery photo-generated carrier diffusion length is the distance producing the position of photo-generated carrier to thin grid line, this
Depending on the distance of thin grid, for centimetre magnitude.And the photo-generated carrier diffusion length of the present invention is cylindrical silicon array structure
Upper PN junction to ITO distance (i.e. the depth of PN junction add SiNx passivation layer thickness), PN junction depth H can at .2 μm～0.42 μm,
Generally 0.252 μm, it is seen that the present invention greatly reduces free-carrier-absorptio length, is greatly improved the electrical property of battery
Energy.
, after 200 times repeatedly cripping test, crackle, bubble or breakage in the crystal silicon flexible battery of the present invention,
Its battery is the 93% of starting efficiency.
The above, be only presently preferred embodiments of the present invention, and not the present invention is made with any pro forma restriction.Though
So the present invention is disclosed as above with preferred embodiment, but is not limited to the present invention.Any it is familiar with those skilled in the art
Member, in the case of the Spirit Essence without departing from the present invention and technical scheme, can be utilized in the methods and techniques of the disclosure above
Hold and technical solution of the present invention is made with many possible variations and modification, or the Equivalent embodiments being revised as equivalent variations.Therefore,
Every content without departing from technical solution of the present invention, the technical spirit of the foundation present invention is to made for any of the above embodiments any simple
Modification, equivalent, equivalence changes and modification, all still fall within the range of technical solution of the present invention protection.
Claims (8)
1. a kind of crystal silicon flexible battery is it is characterised in that described crystal silicon flexible battery includes encapsulating film and in encapsulating film
Battery component, described battery component is from the bottom to top successively by aluminum back electrode layer, monocrystal silicon substrate layer, cylindrical silicon array structure
Layer, PN junction layer, SiNx passivation layer and ito thin film layer composition.
2. crystal silicon flexible battery according to claim 1 is it is characterised in that the array of described cylindrical silicon array structure layer
A diameter of 1 μm～2 μm of unit, a height of 2 μm～4 μm of array element, the center distance between adjacent array element be 3 μm～
8μm；And/or, the junction depth of described PN junction layer is 0.2 μm～0.42 μm；And/or, in described SiNx passivation layer, the atom of Si and N
Between 0.743 and 1.014, the thickness of described SiNx passivation layer is 50nm～80nm to ratio.
3. crystal silicon flexible battery according to claim 1 and 2 is it is characterised in that the thickness of described monocrystal silicon substrate layer is
20 μm～100 μm；And/or, the light transmission rate T ＞ 90% of described ito thin film layer, electricalresistivityρ ＜ 4 × 10-4Ω cm, refractive index
N is 2.1～2.5.
4. a kind of preparation method of the crystal silicon flexible battery as any one of claims 1 to 3, comprises the following steps：
(1) chemical etching：Carry out chemical etching on the monosilicon, etch cylindrical silicon array structure, obtain cylindrical silicon battle array
Array structure layer；
(2) spread：On cylindrical silicon array structure layer, PN junction is prepared using diffusion technique, obtain PN junction layer；
(3) prepare SiNx passivation layer：PN junction layer adopt pecvd process prepare SiNx passivation layer；
(4) plate ito thin film layer：SiNx passivation layer adopts pecvd process plate ito thin film, obtain ito thin film layer；
(5) etch the silicon back side：The monocrystalline silicon back side retaining in step (1) performs etching cuts thin, obtains monocrystal silicon substrate layer；
(6) aluminize back electrode：In the back side serigraphy aluminium paste of monocrystal silicon substrate layer, sintered after, obtain aluminum back electrode layer；
(7) encapsulate：The battery component of each structure sheaf composition that step (1)～(6) are prepared respectively is packaged, and obtains crystal silicon soft
Property battery.
5. the preparation method of crystal silicon flexible battery according to claim 4 is it is characterised in that in described step (2), described
Diffusion technique includes following process：First in O2And N2Aoxidize 3min～5min, Ran Houtong at 600 DEG C～800 DEG C in atmosphere
POCl3、O2And N2, spread 3min～5min at diffusion temperature is 800 DEG C～825 DEG C, then rise high-temperature to 810 DEG C～835
DEG C, in POCl3、O2And N2In atmosphere, deep diffusion 3min～5min, pushes away deep PN junction further.
6. the preparation method of crystal silicon flexible battery according to claim 4 is it is characterised in that in described step (3), described
The condition of pecvd process is：Vacuum pressure is 180Pa～230Pa, and coating temperature is 430 DEG C～450 DEG C, is passed through SiH4And NH3,
SiH4With NH3Gas flow ratio be 4200: 500, radio-frequency power be 3500W～4000W.
7. the preparation method of the crystal silicon flexible battery according to any one of claim 4～6 is it is characterised in that described step
Suddenly, in (6), described sintering process is as follows：First aluminium paste is dried, drying temperature is 100 DEG C～200 DEG C, drying time is 10min
～20min, then at 400 DEG C～450 DEG C sinter 30min～60min, at 600 DEG C～900 DEG C sintering 10min～
25min, forms Ohmic contact.
8. the preparation method of the crystal silicon flexible battery according to any one of claim 4～6 is it is characterised in that described step
Suddenly, in (7), the material of described encapsulation is dimethyl silicone polymer.
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| CN201610874534.6A CN106409922B (en) | 2016-09-30 | 2016-09-30 | Crystal silicon flexible battery and preparation method thereof |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201610874534.6A CN106409922B (en) | 2016-09-30 | 2016-09-30 | Crystal silicon flexible battery and preparation method thereof |
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| CN107195716A (en) * | 2017-05-13 | 2017-09-22 | 西南交通大学 | A kind of space thin-film solar cells device based on flexible substrate Structured Design |
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