CN106356638A - Absorption-rate-adjustable bandwidth electromagnetic wave absorber based on graphene film - Google Patents
Absorption-rate-adjustable bandwidth electromagnetic wave absorber based on graphene film Download PDFInfo
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- CN106356638A CN106356638A CN201610895771.0A CN201610895771A CN106356638A CN 106356638 A CN106356638 A CN 106356638A CN 201610895771 A CN201610895771 A CN 201610895771A CN 106356638 A CN106356638 A CN 106356638A
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- graphene film
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q17/00—Devices for absorbing waves radiated from an antenna; Combinations of such devices with active antenna elements or systems
- H01Q17/008—Devices for absorbing waves radiated from an antenna; Combinations of such devices with active antenna elements or systems with a particular shape
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Abstract
The invention provides an absorption-rate-adjustable bandwidth electromagnetic wave absorber based on a graphene film, and aims to solve the technical problems of high cost and poor practicability in the conventional absorption-rate-adjustable bandwidth electromagnetic wave absorber based on the graphene film. The absorption-rate-adjustable bandwidth electromagnetic wave absorber comprises a conductive layer and a dielectric layer which are laminated one above the other, wherein the conductive layer comprises a metal patch and a graphene film attached to the lower surface of the metal patch; a plurality of cross-shaped gaps of different forms are etched into the metal patch to form M*N patch units; each patch unit consists of m*n patches; the dielectric layer comprises a first dielectric plate, a second dielectric plate and a third dielectric plate which are laminated from top to bottom; a bottom plate is printed on the lower surface of the third dielectric plate; a direct-current power supply is connected between the graphene film and the second dielectric plate, and is used for adjusting surface conductivity of the graphene film. The absorption-rate-adjustable bandwidth electromagnetic wave absorber has the advantages of low cost and high practicability, and can be applied to occasions requiring an intermittent wave-absorbing feature such as a paraboloid antenna and an aircraft surface.
Description
Technical field
The invention belongs to electromagnetism stealth technology field, it is related to a kind of adjustable wide-band electromagnetic wave absorption device and in particular to a kind of base
In the suction ripple rate adjustable type wideband electromagnetic wave absorbing device of graphene film, the electromagnetism that can be used for inhaling the adjustable field of ripple rate is anti-interference and electric
Magnetic is compatible.
Background technology
Graphene is a kind of two dimensional surface carbon atom thin-film material, has monoatomic layer thickness, mechanical hardness height, carrier
Mobility is high, pliability and light transmission is good, electrical conductivity scalable the features such as, can be used to design various novel nano devices or
Person's transparent conductive material, such as transparency electrode, optical modulator, polarizer, plasma device, photon detector, super prism and suction
Wave device etc..
Electromagnetic wave absorption device or title wave absorbing device, refering in particular to can be by incident electro-magnetic wave absorption and electromagnetic energy therein conversion
For the electromagnetic device of heat energy or the energy of other forms, the application in a lot of fields is widely.According to the shape of wave absorbing device,
Generally can be divided into three kinds: wedge shape, coating shape, plate shaped.The wave absorbing device of wedge shape is generally used for microwave dark room, mainly by poly- ammonia
Ester foam type, non-woven fabrics nonflammable, silicate board metal film are packaging etc..With the reduction of frequency, wave-absorber length is also significantly
Increase, the length of common wedge shape wave-absorber is roughly equal with wavelength, is not only difficult in technique, and microwave dark room has
Effect free space is also greatly reduced.The wave absorbing device of coating shape is generally used for aircraft surface, is widening frequency band, typically all adopts multiple
The coating of condensation material.For plate shaped wave absorbing device, the wave absorbing device being abroad developed into earliest is exactly that monolayer is plate shaped, makes
Wave-absorber be all to be placed directly against on metal screen layer, its thickness of thin, lightweight, but operating frequency range is narrower.Went out later again
Showed double-deck or multi-layer planar shape, traditional flat board wave absorbing device structure is salisbury screen wave absorbing device, it by sheet resistance layer,
Quarter-wave dielectric layer is formed with metal backing, and the impedance of sheet resistance layer and free space match, and makes incidence
Electromagnetic wave is completely into dielectric layer, and using interfering cancellation principle, reaches the purpose absorbing specific wavelength electromagnetic wave.But, by
In the characteristic of structure itself, the suction ripple limited bandwidth of salisbury screen wave absorbing device.E.f.knott et al. is based on salisbury screen
The principle design of wave absorbing device goes out jaumann wave absorbing device, and this wave absorbing device is arranged alternately with each other using multilamellar resistor disc and medium substrate
Constitute, produce multiple absorption peaks intercoupling, compared to salisbury screen wave absorbing device, there is broader suction wavestrip width, show
And be clear to, the maximum problem of this structure is thickness and the quality considerably increasing wave absorbing device.Subsequently, in order to reduce wave absorbing device
Thickness, occurs in that Meta Materials wave absorbing device, the commonly used three-decker of this wave absorbing device: its top layer is that periodicity metal pattern is constituted
Frequency-selective surfaces (fss), the second layer is dielectric layer, and third layer is metal base plate.By adjust the shape of structure, size,
Thickness, metal material and intermediate medium layer material, thus it is possible to vary inhale wavestrip width and inhale ripple rate, but, this kind of wave absorbing device inhales wavestrip
Wide relative narrower, inhales wavestrip width to expand, and research worker improves to its structure, and the periodic patterns at top are using conductive
Thin film, middle is dielectric layer, and base plate adopts metal material, it is possible to achieve the effect of ripple is inhaled in broadband.Frequency-selective surfaces are constituted
Although wave absorbing device has preferable absorbing property, microwave absorbing property can not change with electromagnetic environment, and occurring in that therewith can
Tune type wave absorbing device, traditional adjustable type wave absorbing device be load between traditional fss unit figure a series of impedors (as resistance,
Inductance, electric capacity) the new fss that constitutes.Adjust the change that impedor impedance magnitude can realize wave absorbing device equiva lent impedance.Above-mentioned
Although a variety of adjustable wave absorbing device enable the dynamic regulation of microwave absorbing property, tunable band is not wide.Occur in that recently again and be based on
The wideband electromagnetic wave absorbing device of Graphene, Graphene has the adjustable property of surface conductivity it is achieved that electromagnetic wave absorption device is in broadband
The adjustable characteristic of scope interior suction ripple rate.For example, Jiang Yan south in 2016 is waited in " Acta Physica Sinica " (vol.65, no.5 (2016)
054101) delivered the article of entitled " a kind of ultra broadband wave absorbing device based on Graphene " on, disclosed one kind and be based on graphite
The ultra broadband wave absorbing device of alkene, it is mainly by up of three layers: upper strata is the Graphene frequency-selective surfaces of square circular mixing ring structure
(fss) layer；Intermediate layer is relative dielectric constant εr=1.05, thickness is the dielectric-slab of 13mm；Bottom is metal copper soleplate, its electricity
Conductance σ=5.8 × 107S/m, thickness is 0.1mm, and there is the circumference of same size the underface of surface square circular mixing ring Graphene
The bi-layer substrate of shape hybrid loop shape, the ground floor of substrate is the silicon dioxide that thickness is 0.5um, and the second layer is that thickness is
The crystalline silicon of 9.5um.Graphene layer is applied with different size of static bias voltage so that in 2.1-9.0ghz frequency range
Interior, inhaling ripple rate can be adjusted in the range of 20%-90%.But Graphene frequency-selective surfaces (fss) layer of this wave absorbing device be by
Graphene frequency-selective surfaces (fss) the unit composition of multiple square circular hybrid loop shapes, this is accomplished by using plasma gas
Etching technique, and Graphene frequency-selective surfaces (fss) welding lead in each square circular hybrid loop shape, are so increased by
The manufacture difficulty of this wave absorbing device, improves the cost of making, a large amount of wires also can affect the absorbing property of this wave absorbing device, also not
It is easy to integrated with microwave system, practicality is poor.
Content of the invention
It is an object of the invention to overcome the defect that above-mentioned prior art exists it is proposed that a kind of based on graphene film
Inhale ripple rate adjustable type wideband electromagnetic wave absorbing device, for solving the suction ripple rate adjustable type wideband electromagnetic wave absorbing device of existing graphene film
The high cost existing and the technical problem of poor practicability.
The technical thought of the present invention is: conductive layer includes metal patch and is attached to the graphene film of its lower surface, gold
Belong to the cross gap that multiple multi-forms are etched with paster, form m × n chip unit, each chip unit is by m × n
Individual paster composition, there are capacity effect, paster there are inductive effect in itself, graphene film can be equivalent to one between paster
Individual resistance, there are inductive effect between the 3rd dielectric-slab and base plate, in a very wide frequency band, the input impedance of wave absorbing device
Close to free space impedance, it is achieved thereby that ripple is inhaled in broadband；It is connected DC source between graphene film and second medium plate,
By adjusting the voltage of DC source it is achieved that the adjustment of surface conductivity to graphene film, change the defeated of wave absorbing device
Enter impedance it is achieved that the adjustable characteristic of wave absorbing device on a wide frequency band.
According to above-mentioned technical thought, the technical scheme realizing the object of the invention employing is:
A kind of suction ripple rate adjustable type wideband electromagnetic wave absorbing device based on graphene film, including stacked on top of one another conductive layer and
Dielectric layer；It is characterized in that, described conductive layer includes metal patch and is attached to the graphene film of its lower surface, described metal
The cross gap of multiple multi-forms is etched with paster, forms m × n chip unit, wherein m ＞ 2, n ＞ 2, each patch
Blade unit is made up of m × n paster, wherein m ＞ 2, n ＞ 2；First medium plate that described dielectric layer includes being laminated from top to bottom,
Second medium plate and the 3rd dielectric-slab, wherein first medium plate adopt insulant, and second medium plate adopts semi-conducting material；Institute
The lower surface stating the 3rd dielectric-slab is printed with base plate；It is connected with DC source between described graphene film and second medium plate,
For adjusting the surface conductivity of graphene film.
The above-mentioned suction ripple rate adjustable type wideband electromagnetic wave absorbing device based on graphene film, described first medium plate adopts two
Silica material.
The above-mentioned suction ripple rate adjustable type wideband electromagnetic wave absorbing device based on graphene film, described second medium plate is using high
Doped silicon material.
The above-mentioned suction ripple rate adjustable type wideband electromagnetic wave absorbing device based on graphene film, described 3rd dielectric-slab, its phase
It is ε to dielectric constantr3, and 1.05 ＜ εr3＜ 4.
The present invention compared with prior art, has the advantage that
The present invention includes metal patch and is attached under it due to including conductive layer and the dielectric layer of stacked on top of one another, conductive layer
The graphene film on surface, dielectric layer includes first medium plate, second medium plate and the 3rd dielectric-slab being laminated from top to bottom, the
The lower surface of three dielectric-slabs is printed with base plate, conductive layer and base plate realize electromagnetic wave multiple reflections and with free space impedance
Join it is achieved that the effect of ripple is inhaled in broadband；It is connected with DC source between graphene film and second medium plate, can be to graphite
The adjustment of the surface conductivity of alkene thin film, changes the input impedance of wave absorbing device it is achieved that wave absorbing device on a wide frequency band is adjustable
Characteristic.Compared with prior art, it is to avoid using plasma vapor etching techniques manufacture graphene film frequency and select tables
Excessive resource consumption during face, significantly reduce manufacture difficulty and cost, simultaneously, it is to avoid inhales ripple unit to each
It is respectively welded wire, reduce the impact to electromagnetic wave absorption device performance for a large amount of wires, with more practicality.
Brief description
Fig. 1 is the overall structure diagram of the embodiment of the present invention 1；
Fig. 2 is the top view of the embodiment of the present invention 1；
Fig. 3 is the suction ripple rate simulation curve figure under the different voltages of the embodiment of the present invention 1, and wherein Fig. 3 (a) is in Graphene
Film surface resistivity rsCurve chart under the corresponding DC voltage of=600ohm/sq；Fig. 3 (b) is in graphene film surface electricity
Resistance rate rsCurve chart under the corresponding DC voltage of=10ohm/sq.
Specific embodiment
With reference to the accompanying drawings and examples, the invention will be further described:
Embodiment 1:
With reference to Fig. 1, a kind of suction ripple rate adjustable type wideband electromagnetic wave absorbing device based on graphene film, including stacked on top of one another
Conductive layer and dielectric layer: described conductive layer includes metal patch 1 and the graphene film 2 being attached to its lower surface, described metal
The cross gap of multiple multi-forms is etched with paster 1, forms m × n chip unit 11, wherein m ＞ 2, n ＞ 2, each
Chip unit 11 is made up of m × n paster 111, wherein m ＞ 2, n ＞ 2；Described dielectric layer includes first being laminated from top to bottom
Dielectric-slab 3, second medium plate 4 and the 3rd dielectric-slab 5, wherein first medium plate 3 adopt insulant, and second medium plate 4 adopts
Semi-conducting material；The lower surface of described 3rd dielectric-slab 5 is printed with base plate 6.Connect between graphene film 2 and second medium plate 4
It is connected to DC source 7, for adjusting the surface conductivity of graphene film 2.
3 × 3 chip units 11 are adopted, each chip unit 11 adopts 2 × 2 square patch 111 in the present embodiment,
The characteristic insensitive to incoming electromagnetic wave polarization can be realized.
Graphene film 2, can be equivalent to a resistance, and its resistance r can be obtained with below equation estimation:
Wherein, s is the surface area of chip unit, and s=a2, a is the cycle of chip unit, and a is the table of graphene film
Area.
First medium plate 3, using relative dielectric constant εr1Earth silicon material for 3.9, its thickness is 100um, because
, in the case that thickness is very thin, surface can be very smooth for this material, and earth silicon material can bear very strong unidirectional current
Pressure.
Second medium plate 4 adopts relative dielectric constant εr2Highly doped silicon material for 11.7, its thickness is 100um, straight
In the case of stream power supply 7 conducting, it is reduced as far as electromagnetic wave and passes through reflection during this material.
3rd dielectric-slab 5 adopts relative dielectric constant εr3Quartz glass dielectric-slab for 3.78, its thickness is 1mm, this Jie
Scutum relative dielectric constant is more stable, for realizing the layer coupling of electromagnetic wave.
Base plate 6, using metallic copper material, because it has higher electrical conductivity, electromagnetic wave approach therebetween when most of energy
Amount is reflected, and does not have electromagnetic wave energy can penetrate and is transferred to the opposite side of base plate 6, reduces wave absorbing device for electromagnetism wave energy
The transmission of amount.
DC source 7, for adjusting the surface conductivity of graphene film 2.The surface conductivity of graphene film 2 with straight
Relation between stream power supply 7 voltage can be drawn with following formula:
Wherein, μcFor chemical potential, tsFor the thickness of earth silicon material, e is electronic charge, σsFor graphene film
Surface conductivity, rsFor the real part of graphene film surface resistivity, xsFor the imaginary part of graphene film surface resistivity,For
Reduced Planck constant, kbFor Boltzmann constant, t is temperature, εrFor the relative dielectric constant of dielectric-slab earth silicon material,
ε0For the dielectric constant in vacuum, γ is electron scattering rate, and ω is frequency, vgFor direct current power source voltage, vfFor fermi level.
The operation principle of the present invention is: due to being connected with DC source 7 between graphene film 2 and second medium plate 4,
An electric field straight down can be produced between graphene film 2 and second medium plate 4, from above-mentioned formula (1), formula (2) and
Formula (3) is as can be seen that by the voltage of adjustment DC source 7, changing the power of electric field, and then regulate and control the change of graphene film 2
Learn gesture, lead to graphene film 2 surface conductivity to change therewith, thus change the input impedance of whole wave absorbing device with from
By the matching degree of space impedance, the final dynamic regulation realized to this wave absorbing device suction ripple rate.
In order to improve the microwave absorbing property of wave absorbing device further, in the presence of incident electromagnetic wave, between square patch 111
There are capacity effect, square patch 111 there are inductive effect in itself；Graphene film 2 can be equivalent to a resistance, the
Three dielectric-slabs 5 and base plate 6 can be equivalent to shorted end transmission line: when the thickness of the 3rd dielectric-slab 5 is less than a quarter operating wave
When long, it there are inductive effect, and therefore, in a very wide frequency band, the real part of this wave absorbing device input impedance is close to freely
Space impedance, close to 0, this shows that the input impedance of this wave absorbing device is had with free space impedance and preferably mates imaginary part, thus
Achieve broadband and inhale ripple.
With reference to Fig. 2, according to above-mentioned principle, can roughly draw the structural parameters of wave absorbing device: the cycle a=of chip unit
6.5mm, the distance between paster b=0.8mm in chip unit, the length of side of square patch is c=1.2mm.
Embodiment 2
Embodiment 2 is identical with the structure of embodiment 1, only the material to the 3rd dielectric-slab 5 and relative dielectric constant εr3Make
Adjustment: relative dielectric constant ε selected by the 3rd dielectric-slab 5r3Poly-methyl acrylate (pmma) dielectric-slab for 4.
Embodiment 3
Embodiment 3 is identical with the structure of embodiment 1, only the material to the 3rd dielectric-slab 5 and relative dielectric constant εr3Make
Adjustment: relative dielectric constant ε selected by the 3rd dielectric-slab 5r3Foam medium plate for 1.05.
Below in conjunction with emulation experiment, the technique effect of the present invention is described further:
1. simulated conditions and content
Using the suction to wave absorbing device under direct current power source voltage different in above-described embodiment 1 for the business simulation software hfss_13.0
Ripple rate curve has carried out simulation calculation, and result is as shown in Figure 3.
2. simulation result
With reference to Fig. 3, the abscissa of in figure is frequency, and unit is ghz, and scope is 10ghz 50ghz, and vertical coordinate represents returns
One changes the electromagnetic wave energy size absorbing, and scope is 0.1 1.From Fig. 3 (a) it can be seen that 23.63ghz 40.85ghz this
In individual frequency range, 0.9 is more than to the absorption of electromagnetic wave；Can be seen that the absorption to electromagnetic wave is less than in whole frequency range from Fig. 3 (b)
0.1.
Above simulation result explanation, the absolute bandwidth of operation that the present embodiment is inhaled during ripple is more than 17ghz, inhales wavestrip width interior suction ripple
Rate be more than 90%, and can by graphene film 2 and second medium plate 4 connect DC source, realize inhale wave amplitude can
Control, compared with prior art, while ensureing that broadband suction ripple rate is adjustable, reduces manufacture difficulty and cost, and practical
Property is higher.
Above-described embodiment is the present invention preferably embodiment, but embodiments of the present invention are not subject to above-described embodiment
Limit, other any spirit without departing from the present invention and the change made under principle, modification, replacement, combine, simplify,
All should be equivalent substitute mode, be included within protection scope of the present invention.
Claims (4)
1. a kind of suction ripple rate adjustable type wideband electromagnetic wave absorbing device, the conductive layer including stacked on top of one another and Jie based on graphene film
Matter layer；It is characterized in that, described conductive layer includes metal patch (1) and the graphene film (2) being attached to its lower surface, described
The cross gap of multiple multi-forms is etched with metal patch (1), forms m × n chip unit (11), wherein m ＞ 2, n
＞ 2, each chip unit (11) is made up of m × n paster (111), wherein m ＞ 2, n ＞ 2；Described dielectric layer include from upper and
The first medium plate (3) of lower stacking, second medium plate (4) and the 3rd dielectric-slab (5), wherein first medium plate (3) are using insulation
Material, second medium plate (4) adopts semi-conducting material；The lower surface of described 3rd dielectric-slab (5) is printed with base plate (6)；Described
It is connected with DC source (7), for adjusting the surface electricity of graphene film between graphene film (2) and second medium plate (4)
Conductance.
2. the suction ripple rate adjustable type wideband electromagnetic wave absorbing device based on graphene film according to claim 1, its feature exists
In described first medium plate (3) adopts earth silicon material.
3. the suction ripple rate adjustable type wideband electromagnetic wave absorbing device based on graphene film according to claim 1, its feature exists
In described second medium plate (4) adopts highly doped silicon material.
4. the suction ripple rate adjustable type wideband electromagnetic wave absorbing device based on graphene film according to claim 1, its feature exists
In, described 3rd dielectric-slab (5), its relative dielectric constant is εr3, and 1.05 ＜ εr3＜ 4.
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Cited By (15)
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| CN107369918A (en) * | 2017-06-30 | 2017-11-21 | 西安电子科技大学 | The adjustable wave absorbing device of bandwidth of operation based on graphene Yu super surface |
| CN107978871A (en) * | 2017-12-27 | 2018-05-01 | 厦门大学 | Polarization based on graphene multiple resonant structures does not depend on broadband Terahertz wave absorbing device |
| CN108767492A (en) * | 2018-04-25 | 2018-11-06 | 北京邮电大学 | Adjustable Terahertz broadband wave absorbing device |
| CN108899656A (en) * | 2018-06-28 | 2018-11-27 | 西安电子科技大学 | A kind of Salisbury suction wave screen loading FSS |
| CN109037962A (en) * | 2018-08-07 | 2018-12-18 | 中国计量大学 | Double frequency graphene is adjustable Terahertz absorber |
| CN109273805A (en) * | 2018-12-07 | 2019-01-25 | 金华伏安光电科技有限公司 | A kind of tunable filter based on graphene |
| CN109411898A (en) * | 2018-10-22 | 2019-03-01 | 桂林电子科技大学 | A method of the adjustable wave absorbing device of Terahertz double frequency-band based on graphene |
| CN109449602A (en) * | 2018-11-12 | 2019-03-08 | 电子科技大学 | A kind of frequency reconfigurable absorbing material based on graphene |
| CN109489804A (en) * | 2018-12-07 | 2019-03-19 | 金华伏安光电科技有限公司 | A kind of acoustic detector |
| CN109638471A (en) * | 2018-12-14 | 2019-04-16 | 电子科技大学 | A kind of adjustable two frequency ranges THz absorber based on Fermi's dirac material |
| CN110571528A (en) * | 2019-09-04 | 2019-12-13 | 天津工业大学 | Tunable terahertz absorber based on graphene floating gate structure and preparation method thereof |
| CN111585040A (en) * | 2020-04-21 | 2020-08-25 | 桂林电子科技大学 | All-dielectric wave absorber based on graphene and Dirac semimetal |
| CN111817019A (en) * | 2020-06-12 | 2020-10-23 | 电子科技大学 | Ultra-wideband high-efficiency wide-angle terahertz wave absorber with gradient structure medium loaded with graphene |
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| CN107369918A (en) * | 2017-06-30 | 2017-11-21 | 西安电子科技大学 | The adjustable wave absorbing device of bandwidth of operation based on graphene Yu super surface |
| CN107369918B (en) * | 2017-06-30 | 2020-01-31 | 西安电子科技大学 | Graphene and super-surface based wave absorber with adjustable working bandwidth |
| CN107978871A (en) * | 2017-12-27 | 2018-05-01 | 厦门大学 | Polarization based on graphene multiple resonant structures does not depend on broadband Terahertz wave absorbing device |
| CN108767492A (en) * | 2018-04-25 | 2018-11-06 | 北京邮电大学 | Adjustable Terahertz broadband wave absorbing device |
| CN108899656B (en) * | 2018-06-28 | 2020-01-31 | 西安电子科技大学 | Salisbury wave-absorbing screens loaded with FSS |
| CN108899656A (en) * | 2018-06-28 | 2018-11-27 | 西安电子科技大学 | A kind of Salisbury suction wave screen loading FSS |
| CN109037962A (en) * | 2018-08-07 | 2018-12-18 | 中国计量大学 | Double frequency graphene is adjustable Terahertz absorber |
| CN109411898A (en) * | 2018-10-22 | 2019-03-01 | 桂林电子科技大学 | A method of the adjustable wave absorbing device of Terahertz double frequency-band based on graphene |
| CN109449602A (en) * | 2018-11-12 | 2019-03-08 | 电子科技大学 | A kind of frequency reconfigurable absorbing material based on graphene |
| CN109449602B (en) * | 2018-11-12 | 2020-11-17 | 电子科技大学 | Frequency-reconfigurable wave-absorbing material based on graphene |
| CN109273805A (en) * | 2018-12-07 | 2019-01-25 | 金华伏安光电科技有限公司 | A kind of tunable filter based on graphene |
| CN109489804A (en) * | 2018-12-07 | 2019-03-19 | 金华伏安光电科技有限公司 | A kind of acoustic detector |
| CN109489804B (en) * | 2018-12-07 | 2021-09-28 | 翟如选 | Acoustic wave detector |
| CN109638471A (en) * | 2018-12-14 | 2019-04-16 | 电子科技大学 | A kind of adjustable two frequency ranges THz absorber based on Fermi's dirac material |
| CN109638471B (en) * | 2018-12-14 | 2021-01-29 | 电子科技大学 | Adjustable two-frequency-band THz absorber based on Fermi Dirac material |
| CN110571528A (en) * | 2019-09-04 | 2019-12-13 | 天津工业大学 | Tunable terahertz absorber based on graphene floating gate structure and preparation method thereof |
| CN111585040A (en) * | 2020-04-21 | 2020-08-25 | 桂林电子科技大学 | All-dielectric wave absorber based on graphene and Dirac semimetal |
| CN111817019A (en) * | 2020-06-12 | 2020-10-23 | 电子科技大学 | Ultra-wideband high-efficiency wide-angle terahertz wave absorber with gradient structure medium loaded with graphene |
| CN113063452A (en) * | 2021-03-23 | 2021-07-02 | 东南大学 | Low-electromagnetic-disturbance atomic gas chamber made of electromagnetic metamaterial |
| CN113161757A (en) * | 2021-04-26 | 2021-07-23 | 中国电子科技集团公司第三十三研究所 | Wave-absorbing shielding demisting graphene metamaterial for ship observation window |
| CN113161757B (en) * | 2021-04-26 | 2022-08-12 | 中国电子科技集团公司第三十三研究所 | Wave-absorbing shielding demisting graphene metamaterial for ship observation window |
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