CN106326053A - Chip security test method and system based on fault injection - Google Patents
Chip security test method and system based on fault injection Download PDFInfo
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- CN106326053A CN106326053A CN201610719853.XA CN201610719853A CN106326053A CN 106326053 A CN106326053 A CN 106326053A CN 201610719853 A CN201610719853 A CN 201610719853A CN 106326053 A CN106326053 A CN 106326053A
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Abstract
The embodiment of the invention provides a chip security test method and system based on fault injection. The method comprises the following steps: focusing femtosecond laser on different positions of the surface of a chip to be tested in sequence through a synchronous control unit, and carrying out fault injection on different positions of the chip to be tested, wherein the femtosecond laser generates two-photon absorption in the chip to be tested to enable a logic unit in the chip to be tested to be overturned; under a situation that the different positions of the chip to be tested are irradiated by the femtosecond laser, operation results output by the chip to be tested are respectively collected; the collected operation results are respectively compared and analyzed with a preset correct operation result of the chip to be tested to determine whether the positions, which are irradiated by the femtosecond laser, of the chip to be tested are subjected to effective faults or not, wherein the amount of the positions subjected to the effective fault is a basis for judging the security degree of the chip to be tested. According to the scheme, fault injection accuracy can be improved, and the scheme is favorable for improving the success rate of the chip security test on the basis of the fault injection.
Description
Technical field
The present invention relates to chip testing technology field, particularly to a kind of chip secure method of testing based on direct fault location
And system.
Background technology
Along with space technology and the development of nuclear technology, quasiconductor ionization radiation effect (also referred to as single particle effect) is by further
Sort research, such as single event latch-up (Single event latch-up, referred to as SEL), single-particle inversion (Single
Event upset, referred to as SEU), single event function interrupt (Single event functional interrupt, be called for short
For SEFI) and single event burnout (Single event burnout, referred to as SEB) etc..According to single particle effect to electronics unit
Can the impact that device causes recover, and single particle effect can be divided into fatal error and recoverable error." unrecoverable error
By mistake " or " hard error " refers to once occur, device or system can be caused the mistake of fatal permanent damage, such as SEB；" can
Recover mistake " or " soft error " refer to by restarting device or re-writing the methods such as data and can recover normal mistake
By mistake, such as SEU, SET, SED etc..Wherein, single event latch-up SEL and single-particle inversion SEU is two kinds of simple grains that occurrence frequency is higher
Sub-effect.
On the other hand, the fault that single particle effect causes has become the important threat of cryptosecurity chip the most.Crypto chip
The enciphering and deciphering algorithm of complexity can be performed, such as symmetry algorithm or public key algorithm etc..Crypto chip has key protection mechanism, by close
Key leaves special memory block in, is not outwards transmitted by communication interface.Crypto chip is present in electronic product in large quantities, than
Such as the credit card, SIM cards of mobile phones, wireless network card, RFID, USB Key, TPM (credible platform module) etc..Therefore, crypto chip is
Through becoming one of reliable approach of ensuring information security.
The means such as crypto chip is illegally read, analyzes by assailant, dissection, to obtaining useful information and illegal profit
Benefit.Laser fault injection attacks (the Laser Fault of British scholar Sergei Skorobogatov discovery in 2002
Injection, referred to as LFI) become the fault injection attacks method of great threat.Assailant only needs a small amount of error result, will
Error result and correct result relative analysis, can draw partially or completely key bit position information.
It is the direct fault location hands that can accurately focus on chip target location that laser fault injects with ion beam direct fault location etc.
Section, it is simple to assailant obtains preferable mistake output.This kind of high accuracy (radius of irradiation ionization is in deep-submicron rank) fault note
Enter attack method and be difficult to defence, the important means of the person that the most become fault injection attacks.Current international cryptography security module
Inspection criterion, as American National Standard Technical Board NIST is in the FIPS Publication140-3 draft of issue in 2012,
Clearly by the demand for security of the defence write cryptosecurity module of fault injection attacks.Password Management office of country of China is 2012
In the cryptochannel detection criteria that year is issued, also require that the commercial cipher chip of high safety grade has the anti-of fault injection attacks
Imperial ability.
Utilize high energy ion beam to carry out radiation research and need expensive special equipment, generally include particle accelerator, terminal
Line board, oscillograph etc..The most only minority colleges and universities and research institution could carry out such experiment.Scientist finds permissible
Utilize the single particle effect that pul sed laser simulation space cosmic ray heavy ion produces in microelectronic component and integrated circuit.
Test and the Basic Mechanism of laser single particle effect are studied, to laser and electronic device by J.S.Melinger in 1994 etc.
Material interaction process has carried out analyzing in greater detail, it is believed that although laser produce electron-hole pair plasma structure and
There is larger difference in the electron-hole plasma Track construction that heavy ion produces, but it is in terms of single particle effect test
Still can be as the important evaluation measures of laboratory.And in engineering design application, laser single particle effect means of testing proportion grain
Sub-accelerator is more practical.
Modern semiconductors manufactures and uses 45nm node technique, 22nm node and 16nm node technique to enter chip the most on a large scale
Also point the day and await for it.Under the conditions of such deep submicron process, the variation of technological parameter in manufacture necessarily causes the radiation effect can
Reduce by property.Chip is carried out the most comprehensively direct fault location, and the test that response carries out systematic analysis becomes inexorable trend.
Result of study shows, laser beam spot size can be focused on micron order size, in quasiconductor work by picosecond pulse laser
The early stage of skill development, the single-particle inversion sensitivity of single transistor in integrated circuit can be investigated.But at semiconductor manufacturing
Technique develops into deep-submicron from micron, even during nanometer nodes, uses conventional nano, picosecond laser, cannot meet focusing
Requirement.New laser technology is utilized to carry out high precision radiation according to the urgent needs becoming research single particle effect.
Summary of the invention
Embodiments provide a kind of chip secure method of testing based on direct fault location, to solve in prior art
Deep-submicron is developed into from micron, even during nanometer nodes, it is impossible to carry out high accuracy direct fault location and survey at semiconductor fabrication process
The technical problem of examination.The method includes: successively femtosecond laser is focused on chip surface to be measured not by synchronous control unit
In co-located, the diverse location of described chip to be measured being carried out direct fault location, wherein, described femtosecond laser is at described chip to be measured
Middle generation two-photon absorption so that the logical block upset in described chip to be measured；Swashed by described femtosecond at described chip to be measured
In the case of photoirradiation diverse location, gather the operation result of described chip to be measured output respectively；The operation result of collection is divided
The not default correct operation result with described chip to be measured compares analysis, determines that described chip to be measured is by described femtosecond laser
Whether irradiated position there is effective fault, and it is to judge described chip secure degree to be measured that effective location of fault quantity occurs
Foundation, wherein, the wrong operation result produced when described effective fault refers to occur this effective fault with preset correct computing
Result computing of making comparisons can analyze a class mistake of key.
In one embodiment, described chip secure degree to be measured is being flown by described with there is effective location of fault quantity
In the second irradiated all number of positions of laser, shared ratio is inversely proportional to.
In one embodiment, the photon energy of described femtosecond laser is more than the energy gap bandwidth of described chip to be measured.
In one embodiment, the wavelength of described femtosecond laser meets described femtosecond laser and focuses in described chip to be measured
Logical block on penetration depth require and meet occur energy level transition energy requirement.
In one embodiment, chip to be measured is placed in femto-second laser on the object stage below Laser Scanning Confocal Microscope,
Successively femtosecond laser is focused on the diverse location of chip surface to be measured by synchronous control unit, including: described to be measured
Chip sends an enabling signal when starting function computing to described synchronous control unit and described chip to be measured, by described with
Step control unit controls femto-second laser and is focused on by described femtosecond laser on a position of described chip surface to be measured, in institute
State chip to be measured and send a halt signal when completing a subfunction computing to described synchronous control unit and described chip to be measured,
Control described femto-second laser by described synchronous control unit and stop event on this position of described chip surface to be measured
Barrier injects, and gathers described chip to be measured and completes the operation result of this subfunction computing；Send the next one at described chip to be measured to open
When dynamic signal starts function computing to described synchronous control unit and described chip to be measured, controlled by described synchronous control unit
Described femtosecond laser, with default step-length moving stage, is focused on the next one of chip surface to be measured by described Laser Scanning Confocal Microscope
On position, send next halt signal at described chip to be measured and complete one to described synchronous control unit and described chip to be measured
During subfunction computing, control described femto-second laser by described synchronous control unit and stop being somebody's turn to do to described chip surface to be measured
Direct fault location on next position, gathers described chip to be measured and completes the operation result of this subfunction computing；Circulate successively, until
Travel through the whole surface of described chip to be measured, send signal ended by described synchronous control unit to described chip to be measured
Direct fault location.
The embodiment of the present invention additionally provides a kind of chip secure based on direct fault location test system, to solve prior art
In develop into deep-submicron at semiconductor fabrication process from micron, even during nanometer nodes, it is impossible to carry out high accuracy direct fault location
The technical problem of test.This system includes: femto-second laser, is used for launching femtosecond laser, and chip to be measured is placed on described femtosecond
In laser instrument on object stage below Laser Scanning Confocal Microscope；Synchronous control unit, is used for controlling described femto-second laser and successively will
Described femtosecond laser focuses on the diverse location of chip surface to be measured, and the diverse location of described chip to be measured is carried out fault note
Entering, wherein, there is two-photon absorption in described femtosecond laser in described chip to be measured so that the logic list in described chip to be measured
Unit's upset；Data acquisition equipment, is used in the case of described chip to be measured is by described Gold Films Irradiated by Femtosecond Laser diverse location, respectively
Gather the operation result of described chip to be measured output；Data analysis facilities, for treating the operation result of collection with described respectively
The default correct operation result surveying chip compares analysis, determines the position that described chip to be measured is crossed by described Gold Films Irradiated by Femtosecond Laser
Putting and whether effective fault occurs, it is the foundation judging described chip secure degree to be measured that effective location of fault quantity occurs, its
In, described effective fault refers to occur the wrong operation result produced during this effective fault to make comparisons with default correct operation result
Computing can analyze a class mistake of key.
In one embodiment, described chip secure degree to be measured is being flown by described with there is effective location of fault quantity
In the second irradiated all number of positions of laser, shared ratio is inversely proportional to.
In one embodiment, the photon energy of described femtosecond laser is more than the energy gap bandwidth of described chip to be measured.
In one embodiment, the wavelength of described femtosecond laser meets described femtosecond laser and focuses in described chip to be measured
Logical block on penetration depth require and meet occur energy level transition energy requirement.
In one embodiment, described synchronous control unit, specifically for sending one receiving described chip to be measured
When enabling signal and described chip to be measured start function computing, control described femto-second laser femtosecond laser is focused on described in treat
Survey on a position of chip surface, send a halt signal and described chip to be measured completes receiving described chip to be measured
During one subfunction computing, control described femto-second laser and stop fault note on this position of described chip surface to be measured
Enter, control the described data acquisition equipment described chip to be measured of collection and complete the operation result of this subfunction computing；Receiving
State chip to be measured and send next enabling signal and time described chip to be measured starts function computing, control described Laser Scanning Confocal Microscope
With default step-length moving stage, described femtosecond laser is focused on the next position of chip surface to be measured, receiving
Described chip to be measured sends next halt signal and time described chip to be measured completes a subfunction computing, controls described femtosecond and swashs
Light device stops direct fault location on this next one position of described chip surface to be measured, controls described data acquisition equipment and gathers institute
State chip to be measured and complete the operation result of this subfunction computing；Circulate successively, until traveling through the whole surface of described chip to be measured,
Signal ended direct fault location has been sent to described chip to be measured.
In embodiments of the present invention, by synchronous control unit, femtosecond laser is focused on the not coordination of chip surface to be measured
Put, the diverse location of chip to be measured is carried out direct fault location, and at chip to be measured by Gold Films Irradiated by Femtosecond Laser diverse location
In the case of, gather the operation result of chip to be measured output respectively, finally by the operation result of collection and just presetting of chip to be measured
Really operation result compares analysis, i.e. can determine that whether the position that chip to be measured is crossed by Gold Films Irradiated by Femtosecond Laser occurs effective event
Barrier, and then according to the safe coefficient occurring effective location of fault quantity i.e. to can determine whether chip to be measured.Owing to femtosecond laser is being treated
Survey and chip occurs two-photon absorption, mistake (i.e. fault) injection attacks in very low range can be realized, it is possible to resolve prior art
In due to integrated circuit fabrication process enter conventional laser after nanometer nodes focus on beam diameter excessive cause cannot accurately control
The problem in direct fault location region processed, and then the accuracy of direct fault location can be promoted, be conducive to improving core based on direct fault location
The precision of sheet safety test result.
Accompanying drawing explanation
Accompanying drawing described herein is used for providing a further understanding of the present invention, constitutes the part of the application, not
Constitute limitation of the invention.In the accompanying drawings:
Fig. 1 is the flow chart of a kind of based on direct fault location the chip secure method of testing that the embodiment of the present invention provides；
Fig. 2 is a kind of schematic flow sheet that chip to be measured carries out direct fault location that the embodiment of the present invention provides；
Fig. 3 is a kind of direct fault location sensitive spot positioning flow schematic diagram that the embodiment of the present invention provides；
Fig. 4 is the structured flowchart of a kind of based on direct fault location the chip secure test system that the embodiment of the present invention provides.
Detailed description of the invention
For making the object, technical solutions and advantages of the present invention clearer, below in conjunction with embodiment and accompanying drawing, right
The present invention is described in further details.Here, the exemplary embodiment of the present invention and explanation thereof are used for explaining the present invention, but also
Not as a limitation of the invention.
In embodiments of the present invention, it is provided that a kind of chip secure method of testing based on direct fault location, as it is shown in figure 1,
The method includes:
Step 101: successively femtosecond laser is focused on the diverse location of chip surface to be measured by synchronous control unit,
The diverse location of described chip to be measured is carried out direct fault location, and wherein, described femtosecond laser occurs double in described chip to be measured
Photonic absorption so that the logical block upset in described chip to be measured；
Step 102: in the case of described chip to be measured is by described Gold Films Irradiated by Femtosecond Laser diverse location, gathers described respectively
The operation result of chip to be measured output；
Step 103: the default correct operation result of the operation result of collection Yu described chip to be measured is compared analysis,
Determine whether the position that described chip to be measured is crossed by described Gold Films Irradiated by Femtosecond Laser occurs effective fault, effective location of fault occurs
Quantity is the foundation judging described chip secure degree to be measured, and wherein, described effective fault refers to occur produce during this effective fault
The computing of making comparisons with default correct operation result of raw wrong operation result can analyze a class mistake of key.
Flow process as shown in Figure 1 understands, and in embodiments of the present invention, is focused on by femtosecond laser by synchronous control unit
On the diverse location of chip surface to be measured, the diverse location of chip to be measured is carried out direct fault location, and is flown at chip to be measured
In the case of second laser irradiation diverse location, gather the operation result of chip to be measured output respectively, the computing knot that finally will gather
Fruit compares analysis with the default correct operation result of chip to be measured, i.e. can determine that what chip to be measured was crossed by Gold Films Irradiated by Femtosecond Laser
Whether position there is effective fault, and then according to the safe journey occurring effective location of fault quantity i.e. to can determine whether chip to be measured
Degree.Owing to femtosecond laser occurs two-photon absorption in chip to be measured, the mistake (i.e. fault) in very low range can be realized and inject
Attack, it is possible to resolve after entering nanometer nodes due to integrated circuit fabrication process in prior art, conventional laser focuses on beam diameter mistake
The problem that cannot accurately control direct fault location region caused greatly, and then the accuracy of direct fault location can be promoted, be conducive to carrying
The precision of high chip secure test result based on direct fault location.
When being embodied as, inventor finds the laser focusing system restriction due to diffraction law of current institute, light
Speckle lateral dimension is more than optical maser wavelength.And femtosecond (10-15s) pulse laser (Femtosecond Laser) has pulse width
Narrow, that peak power is high characteristic, is not single-photon process during with matter interaction, but two-photon or multiphoton processes.Cause
This, be not in the range of whole focal spot when having femtosecond laser beam and the matter interaction of Gauss cross direction profiles, but far away
Less than hot spot, focusing yardstick, up to 1/20 wavelength, can reach few tens of nanometers in theory.First femto-second laser pulse swashs at dyestuff
The principle utilizing impact pulse mode-locked (CPM) in light device obtains, and along with the development of the crystal technique eighties, asks with nineteen eighty-two
The ti sapphire crystal (Ti:Sapphire) of generation is representative, occurs in that the solid state laser of a series of function admirable, compared with dye
Material laser instrument, the laser instrument with Ti∶Sapphire laser as gain media has wider tuning range, is equivalent to four～five kind of dye combinations
The wave band covered.It is widely used to the various fields such as ultra-precise laser processing, multiphoton microscope, nonlinear spectroscopy,
The Cheng Ya of Siom of Chinese Academy of Sciences in 2014, the neat red rosy clouds of Jilin University etc. have studied the micro-nano technology of femtosecond laser.
Siom of Chinese Academy of Sciences Wang Jun in 2015 etc. have studied the mechanism of two-photon absorption in composite.
The general peak power of femto-second laser reaches hundreds of kilowatts, and laser pulse width is less than 100fs (1fs=10-15s).After focusing
Femtosecond laser there is high field intensity, when the distribution of light intensity in medium and intramolecular electric field intensity can compared with time, permitted
Multimedium presents significant non-linear nature.Two-photon absorption belongs to a kind of typical third-order nonlinear optical effect, and it produces
Raw probability be proportional to photon flux density square.Two-photon absorption, and double light only just can occur under the strongest light intensity
Son absorption is limited to the spatial volume of object focal point and is about λ3In the range of (λ is lambda1-wavelength).Incident illumination is only at this
Point could obtain higher power density, multiphoton absorption and ionization occurs, so that the logical block within safety chip is turned over
Turn.Additionally, utilize femtosecond laser to realize two-photon absorption use long wavelength laser, penetration capacity is strong, can directly act on
At material internal.I.e. femtosecond laser can be as high-precision failure of chip implantation tool.Therefore, inventor utilizes femtosecond laser to exist
The principle occurring two-photon absorption that the logical block in chip to be measured can be made to overturn in chip to be measured, proposes above-mentioned based on femtosecond
The chip secure method of testing that laser fault injects, to improve the accuracy of direct fault location, it is ensured that chip secure test result
Precision.
When being embodied as, can focus in the logical block in chip to be measured in order to ensure femtosecond laser, so permissible
Occur two-photon absorption that the logical block in chip to be measured is overturn in chip to be measured, in the present embodiment, described femtosecond
The wavelength of laser meets the penetration depth that described femtosecond laser focuses in the logical block in described chip to be measured and requires and full
There is the energy requirement of energy level transition in foot.
Concrete, selecting optical maser wavelength according to quasiconductor (the most above-mentioned chip to be measured) material, quasiconductor the most all uses silicon
Material, so the photon energy that the premise of femtosecond laser generation two-photon absorption and ionization is femtosecond laser exceedes the energy of quasiconductor
Gap bandwidth (> 1.1eV), such as, femtosecond laser wavelength is at below 1064nm.But, the least penetration depth of wavelength is the most shallow, but double
The mechanism of photonic absorption shows, when Ultra-intense laser pulse is propagated in molecular media, to be always attended by the product of higher hamonic wave
The process such as (ASE) and Superfluorescence (SF) is amplified in life, stimulated Raman scattering (SRS), spontaneous radiation, and this makes us choose
Need the when of wavelength to extend wavelength, attempt using the 900nm band above that relative penetration depth is relatively deep, rate of ionization is less,
I.e. the wavelength of femtosecond laser should meet femtosecond laser can focus on the penetration depth in the logical block in chip to be measured want
Ask to meet again and the energy requirement of energy level transition can occur, such as, the wavelength of femtosecond laser can be less than 1064 nanometers and
More than 900 nanometers, to guarantee that femtosecond laser occurs two-photon absorption in quasiconductor so that logical block overturns.
When being embodied as, at the not coordination that successively femtosecond laser is focused on chip surface to be measured by synchronous control unit
Before putting, the incident parameters of femto-second laser can be determined according to the technique of chip to be measured and test needs, joins in this incidence
The femtosecond laser that several lower femto-second lasers are launched can make the logical block in chip to be measured overturn.Concrete, incident ginseng
Number can be photon energy and the wavelength of femtosecond laser.
When being embodied as, the output of femto-second laser can be tested as depending on according to existing laser fault injection attacks
According to, substantially at about 1.4W, find suitable power with the ratio incremental of 1%.
When being embodied as, during direct fault location, in order to realize being gathered by femtosecond laser successively by synchronous control unit
Burnt on the diverse location of chip surface to be measured, in the present embodiment, chip to be measured is placed on copolymerization Jiao in femto-second laser and shows
On object stage below micro mirror, successively femtosecond laser is focused on by synchronous control unit the diverse location of chip surface to be measured
On, including: send an enabling signal at described chip to be measured and start merit to described synchronous control unit and described chip to be measured
During energy computing, control femto-second laser by described synchronous control unit and described femtosecond laser is focused on described chip list to be measured
On one position in face, send a halt signal to described synchronous control unit and described chip to be measured at described chip to be measured
When completing a subfunction computing, control described femto-second laser by described synchronous control unit and stop to described chip list to be measured
Direct fault location on this position in face, gathers described chip to be measured and completes the operation result of this subfunction computing；Treat described
Survey chip and send next enabling signal when starting function computing to described synchronous control unit and described chip to be measured, by institute
State synchronous control unit control described Laser Scanning Confocal Microscope with default step-length moving stage, described femtosecond laser is focused on and treats
Survey on the next position of chip surface, described chip to be measured send next halt signal to described synchronous control unit and
When described chip to be measured completes a subfunction computing, control described femto-second laser by described synchronous control unit and stop to institute
State direct fault location on this next one position of chip surface to be measured, gather described chip to be measured and complete the computing of this subfunction computing
Result；Circulate successively, until traveling through the whole surface of described chip to be measured, by described synchronous control unit to described core to be measured
Sheet has sent signal ended direct fault location.
Concrete, during direct fault location, in order to realize being focused on by femtosecond laser successively by synchronous control unit
On the diverse location of chip surface to be measured, the application utilizes the software kit of laser instrument and Laser Scanning Confocal Microscope to carry out secondary and opens
Send out, laser intensity and synchronization policy are controlled, utilize microscopical two dimension object stage to realize the two dimension shifting to chip to be measured
Dynamic, control femto-second laser and Laser Scanning Confocal Microscope by synchronous control unit, the irradiation of femtosecond laser starts/terminates all same
Complete under the Collaborative Control of step control unit and chip to be measured.Such as, Fig. 2 shows between synchronous control unit and chip to be measured
Handshake Protocol.We define three handshake: Start signal, Stop signal and Done signal.Start signal is to be measured
Issuing the enabling signal of synchronous control unit after chip is ready, stop signal is the time-out letter of femtosecond laser direct fault location
Number, Done signal has been signal.
Concrete direct fault location process is: issue one enabling signal of synchronous control unit after chip to be measured is ready
Start, chip the most to be measured starts logical operations work, and synchronous control unit controls femto-second laser and focused on by femtosecond laser
On one position of chip surface to be measured, after chip to be measured completes a subfunction computing, a femtosecond laser event will be sent
The halt signal stop that barrier injects, informs that synchronous control unit suspends the injection of fault, and chip the most to be measured carries out Self-resetting, disappears
Except the impact of last soft error, being ready for the direct fault location test of next round, synchronous control unit controls femto-second laser
Stop injecting fault on this position of chip to be measured, control data acquisition equipment collection chip to be measured simultaneously and complete this
The operation result of function computing, the operation result of this this subfunction computing is for comparing point with default correct operation result
Analysis, to determine whether this position of chip to be measured breaks down.After femto-second laser suspends, synchronous control unit will control
Laser Scanning Confocal Microscope processed moves two dimension object stage with pre-designed step-length, and femtosecond laser focuses on chip surface to be measured
On next position, issue synchronous control unit next one enabling signal Start, chip the most to be measured when receiving chip to be measured
Starting logical operations work, femtosecond laser is focused on next of chip surface to be measured by synchronous control unit control femto-second laser
Carry out direct fault location on individual position, after chip to be measured completes a subfunction computing, next femtosecond laser fault will be sent
The halt signal stop injected, informs that synchronous control unit suspends the injection of fault, and chip the most to be measured carries out Self-resetting, eliminates
The impact of last soft error, is ready for the direct fault location test of next round, and synchronous control unit controls data acquisition equipment
Gather chip to be measured and complete the operation result of this subfunction computing.Circulate above-mentioned direct fault location process successively, when Synchronization Control list
When unit completes the traversal test on surface whole to chip to be measured, just sending one to chip to be measured and complete signal Done, fault is noted
Enter to terminate, all operation results gathered before are issued irradiation effect reliability/safety analyser, reliable in irradiation effect
Property/safety analysis instrument in, all operation results gathered default correct operation result with chip to be measured respectively is compared
Relatively analyze, determine whether the position that chip to be measured is crossed by Gold Films Irradiated by Femtosecond Laser occurs effective fault, determine the effective fault of generation
Position.
When being embodied as, in irradiation effect reliability/safety analyser, those sensitive logic circuits can be only focused on
Whether being injected into mistake, the circuit unrelated to safety can not be paid close attention to, so needing the direct fault location of combining cipher algorithm
Theory goes to judge whether scanning element is sensitive spot (the effective location of fault of the most above-mentioned generation).Owing to the two-photon of femtosecond laser is inhaled
Receive, the fault injection attacks in very low range can be realized, so we typically can be this most less according to 1 or 2
The theory of attacking of position fault goes to analyze whether this output result mates the fault type of these candidates, further determines that this scanning element
Whether it is sensitive spot.By the computing output result of each irradiation respectively compared with correct operation result, as differed, then show
During this chip computing to be measured, the logic circuit at irradiation is filled with a mistake, just by corresponding position mark
Go out for direct fault location sensitive spot.As identical with correct operation result in computing output result, then show that fault is not injected into spoke
Logic circuit according to place.Analyze the computing output result at all irradiation successively, it is possible to obtain fault note as shown in Figure 3
Entering sensitive spot location figure, in Fig. 3, black cross represents direct fault location sensitive spot.
Concrete, chip secure degree to be measured and the number of positions broken down are in the institute crossed by described Gold Films Irradiated by Femtosecond Laser
Ratio shared in number of positions is had to be inversely proportional to, such as, as it is shown on figure 3, direct fault location sensitive spot may be considered chip to be measured
The position of the effective direct fault location of middle generation, the position that effective direct fault location occurs is the most, and the position of effective direct fault location i.e. occurs
Ratio shared in all number of positions crossed by Gold Films Irradiated by Femtosecond Laser is the biggest, the safe coefficient of this chip to be measured is described more
Low.
When being embodied as, when building a femtosecond laser direct fault location test experiments platform, the U.S. can be used
The Mai Tai Deepsee femto-second laser of Spectra-Physics company and the A1MP+ series copolymerization of Nikon company are burnt
Microscope.The former can provide the irradiation of power-adjustable in the range of 680nm-1040nm, and it uses super steady regeneration institute Tool and Die Technology,
Wavelength regulation and stimulation arrangement are the most easily adjusted, and light beam points to stable, and power swing is little, eliminates wave length shift.The latter is directly interior
Put femto-second laser and carried out light path design, femtosecond laser can be focused in 1 μm spatial dimension, according to suitable thing
Mirror, can focus on femtosecond laser beam in less spatial dimension.Chip to be measured can use based on ALTERA DE2-115
The rsa encryption circuit of FPGA.Laser Scanning Confocal Microscope itself has two-dimentional motorized subject table, can realize the two-dimensional movement of sample, real
The fault injection attacks of the existing whole surface range of electronic chip.Experiment porch can obtain PRELIMINARY RESULTS, such as, with FPGA
As a example by chip, being 0.6um with the wavelength of 900nm from front irradiation circuit, focal beam spot size diameter, object stage is with 0.1um's
Step-length moves, and produces stable mistake during power 2.5W.Table 1 is the deciphering parameter of binary system RSA based on FPGA, table 2 be
Under the irradiation of femtosecond laser, the decrypted result of the mistake that rsa cryptosystem circuit produces in deciphering computing.
Table 1
Table 2
Based on same inventive concept, the embodiment of the present invention additionally provides the test of a kind of chip secure based on direct fault location
System, as described in the following examples.Owing to chip secure based on direct fault location test system solves principle and the base of problem
Similar in the chip secure method of testing of direct fault location, therefore the enforcement of chip secure based on direct fault location test system is permissible
See the enforcement of chip secure method of testing based on direct fault location, repeat no more in place of repetition.Used below, term
" unit " or " module " can realize the software of predetermined function and/or the combination of hardware.Although described by following example
Device preferably realizes with software, but hardware, or the realization of the combination of software and hardware also may and be contemplated.
Fig. 4 is a kind of structured flowchart of chip secure based on the direct fault location test system of the embodiment of the present invention, such as Fig. 4
Shown in, including:
Femto-second laser 401, is used for launching femtosecond laser, and chip to be measured is placed on copolymerization Jiao in described femto-second laser and shows
On object stage below micro mirror；
Synchronous control unit 402, is used for controlling described femto-second laser and successively described femtosecond laser is focused on core to be measured
On the diverse location on sheet surface, the diverse location of described chip to be measured being carried out direct fault location, wherein, described femtosecond laser is in institute
State generation two-photon absorption in chip to be measured so that the logical block upset in described chip to be measured；
Data acquisition equipment 403, is used in the case of described chip to be measured is by described Gold Films Irradiated by Femtosecond Laser diverse location,
Gather the operation result of described chip to be measured output respectively；
Data analysis facilities 404, for the operation result that will gather respectively with the default correct computing of described chip to be measured
Result compares analysis, determines whether the position that described chip to be measured is crossed by described Gold Films Irradiated by Femtosecond Laser occurs effective fault,
It is the foundation judging described chip secure degree to be measured that effective location of fault quantity occurs, and wherein, described effective fault refers to
The wrong operation result produced when there is this effective fault computing of making comparisons with default correct operation result can analyze key
A class mistake.
In one embodiment, described chip secure degree to be measured is being flown by described with there is effective location of fault quantity
In the second irradiated all number of positions of laser, shared ratio is inversely proportional to.
In one embodiment, the photon energy of described femtosecond laser is more than the energy gap bandwidth of described chip to be measured.
In one embodiment, the wavelength of described femtosecond laser meets described femtosecond laser and focuses in described chip to be measured
Logical block on penetration depth require and meet occur energy level transition energy requirement.
In one embodiment, described synchronous control unit, specifically for sending one receiving described chip to be measured
When enabling signal and described chip to be measured start function computing, control described femto-second laser femtosecond laser is focused on described in treat
Survey on a position of chip surface, send a halt signal and described chip to be measured completes receiving described chip to be measured
During one subfunction computing, control described femto-second laser and stop fault note on this position of described chip surface to be measured
Enter, control the described data acquisition equipment described chip to be measured of collection and complete the operation result of this subfunction computing；Receiving
State chip to be measured and send next enabling signal and time described chip to be measured starts function computing, control described Laser Scanning Confocal Microscope
With default step-length moving stage, femtosecond laser is focused on the next position of chip surface to be measured, described receiving
Chip to be measured sends next halt signal and time described chip to be measured completes a subfunction computing, controls described femto-second laser
Stop direct fault location on this next one position of described chip surface to be measured, control to treat described in described data acquisition equipment collection
Survey chip and complete the operation result of this subfunction computing；Circulate successively, until traveling through the whole surface of described chip to be measured, to institute
State chip to be measured and send signal ended direct fault location.
In embodiments of the present invention, by synchronous control unit, femtosecond laser is focused on the not coordination of chip surface to be measured
Put, the diverse location of chip to be measured is carried out direct fault location, and at chip to be measured by Gold Films Irradiated by Femtosecond Laser diverse location
In the case of, gather the operation result of chip to be measured output respectively, finally by the operation result of collection and just presetting of chip to be measured
Really operation result compares analysis, i.e. can determine that whether the position that chip to be measured is crossed by Gold Films Irradiated by Femtosecond Laser occurs effective event
Barrier, and then according to the safe coefficient occurring effective location of fault quantity i.e. to can determine whether chip to be measured.Owing to femtosecond laser is being treated
Survey and chip occurs two-photon absorption, mistake (i.e. fault) injection attacks in very low range can be realized, it is possible to resolve prior art
In due to integrated circuit fabrication process enter conventional laser after nanometer nodes focus on beam diameter excessive cause cannot accurately control
The problem in direct fault location region processed, and then the accuracy of direct fault location can be promoted, be conducive to improving core based on direct fault location
The precision of sheet safety test result.
Obviously, those skilled in the art should be understood that each module of the above-mentioned embodiment of the present invention or each step are permissible
Realizing with general calculating device, they can concentrate on single calculating device, or is distributed in multiple calculating device
On the network formed, alternatively, they can realize with calculating the executable program code of device, it is thus possible to by it
Store and perform by calculating device in the storage device, and in some cases, can hold with the order being different from herein
Step shown or described by row, or they are fabricated to respectively each integrated circuit modules, or multiple by them
Module or step are fabricated to single integrated circuit module and realize.So, the embodiment of the present invention is not restricted to any specific hard
Part and software combine.
The foregoing is only the preferred embodiments of the present invention, be not limited to the present invention, for the skill of this area
For art personnel, the embodiment of the present invention can have various modifications and variations.All within the spirit and principles in the present invention, made
Any modification, equivalent substitution and improvement etc., should be included within the scope of the present invention.
Claims (10)
1. a chip secure method of testing based on direct fault location, it is characterised in that including:
Successively femtosecond laser is focused on the diverse location of chip surface to be measured by synchronous control unit, to described core to be measured
The diverse location of sheet carries out direct fault location, and wherein, described femtosecond laser occurs two-photon absorption in described chip to be measured so that
Logical block upset in described chip to be measured；
In the case of described chip to be measured is by described Gold Films Irradiated by Femtosecond Laser diverse location, gather the output of described chip to be measured respectively
Operation result；
By the operation result of collection, default correct operation result with described chip to be measured compares analysis respectively, determines described
Whether the position that chip to be measured is crossed by described Gold Films Irradiated by Femtosecond Laser there is effective fault, and it is to sentence that effective location of fault quantity occurs
The foundation of disconnected described chip secure degree to be measured, wherein, described effective fault refers to occur the mistake produced during this effective fault
Operation result can analyze a class mistake of key with presetting the computing of making comparisons of correct operation result.
2. chip secure method of testing based on direct fault location as claimed in claim 1, it is characterised in that described chip to be measured
Safe coefficient and occur effective location of fault quantity shared in all number of positions crossed by described Gold Films Irradiated by Femtosecond Laser
Ratio is inversely proportional to.
3. chip secure method of testing based on direct fault location as claimed in claim 1, it is characterised in that described femtosecond laser
Photon energy more than the energy gap bandwidth of described chip to be measured.
4. chip secure method of testing based on direct fault location as claimed in claim 1, it is characterised in that described femtosecond laser
Wavelength meet the penetration depth that described femtosecond laser focuses in the logical block in described chip to be measured and require and meet to send out
The energy requirement of raw energy level transition.
5. the chip secure method of testing based on direct fault location as according to any one of Claims 1-4, chip to be measured is placed
In femto-second laser on object stage below Laser Scanning Confocal Microscope, it is characterised in that will be flown successively by synchronous control unit
Second, laser focusing was on the diverse location of chip surface to be measured, including:
Send an enabling signal at described chip to be measured and start function fortune to described synchronous control unit and described chip to be measured
During calculation, control femto-second laser by described synchronous control unit and described femtosecond laser is focused on described chip surface to be measured
On one position, send a halt signal at described chip to be measured and complete to described synchronous control unit and described chip to be measured
During one subfunction computing, control described femto-second laser by described synchronous control unit and stop to described chip surface to be measured
Direct fault location on this position, gathers described chip to be measured and completes the operation result of this subfunction computing；At described core to be measured
Sheet sends next enabling signal when starting function computing to described synchronous control unit and described chip to be measured, by described with
Described femtosecond laser, with default step-length moving stage, is focused on core to be measured by the step control unit described Laser Scanning Confocal Microscope of control
On the next position on sheet surface, send next halt signal to described synchronous control unit and described at described chip to be measured
When chip to be measured completes a subfunction computing, control described femto-second laser by described synchronous control unit and stop treating to described
Survey direct fault location on this next one position of chip surface, gather described chip to be measured and complete the computing knot of this subfunction computing
Really；Circulate successively, until traveling through the whole surface of described chip to be measured, by described synchronous control unit to described chip to be measured
Send signal ended direct fault location.
6. chip secure based on a direct fault location test system, it is characterised in that including:
Femto-second laser, is used for launching femtosecond laser, and chip to be measured is placed in described femto-second laser under Laser Scanning Confocal Microscope
On the object stage of side；
Synchronous control unit, focuses on chip surface to be measured by described femtosecond laser successively for controlling described femto-second laser
On diverse location, the diverse location of described chip to be measured being carried out direct fault location, wherein, described femtosecond laser is at described core to be measured
Sheet there is two-photon absorption so that the logical block upset in described chip to be measured；
Data acquisition equipment, in the case of described chip to be measured is by described Gold Films Irradiated by Femtosecond Laser diverse location, adopts respectively
Collect the operation result of described chip to be measured output；
Data analysis facilities, for by the operation result of collection respectively default correct operation result with described chip to be measured carry out
Comparative analysis, determines whether the position that described chip to be measured is crossed by described Gold Films Irradiated by Femtosecond Laser occurs effective fault, occurs effectively
Location of fault quantity is the foundation judging described chip secure degree to be measured, and wherein, described effective fault refers to occur this to have
Effect fault time produce wrong operation result with preset correct operation result make comparisons computing can analyze key one class mistake
By mistake.
7. chip secure based on direct fault location test system as claimed in claim 6, it is characterised in that described chip to be measured
Safe coefficient and occur effective location of fault quantity shared in all number of positions crossed by described Gold Films Irradiated by Femtosecond Laser
Ratio is inversely proportional to.
8. chip secure based on direct fault location test system as claimed in claim 6, it is characterised in that described femtosecond laser
Photon energy more than the energy gap bandwidth of described chip to be measured.
9. chip secure based on direct fault location test system as claimed in claim 6, it is characterised in that described femtosecond laser
Wavelength meet the penetration depth that described femtosecond laser focuses in the logical block in described chip to be measured and require and meet to send out
The energy requirement of raw energy level transition.
10. chip secure based on the direct fault location test system as according to any one of claim 6 to 9, it is characterised in that
Described synchronous control unit, specifically for sending an enabling signal and described chip to be measured is opened receiving described chip to be measured
During beginning function computing, control described femto-second laser and described femtosecond laser is focused on a position of described chip surface to be measured
On, send a halt signal and time described chip to be measured completes a subfunction computing receiving described chip to be measured, control
Described femto-second laser stops direct fault location on this position of described chip surface to be measured, controls described data acquisition and sets
The described chip to be measured of standby collection completes the operation result of this subfunction computing；Send the next one open receiving described chip to be measured
When dynamic signal and described chip to be measured start function computing, control described Laser Scanning Confocal Microscope with default step-length moving stage,
Described femtosecond laser is focused on the next position of chip surface to be measured, send the next one receiving described chip to be measured
When halt signal and described chip to be measured complete a subfunction computing, control described femto-second laser and stop to described chip to be measured
Direct fault location on this next one position on surface, controls the described data acquisition equipment described chip to be measured of collection and completes this subfunction
The operation result of computing；Circulating successively, until traveling through the whole surface of described chip to be measured, having sent to described chip to be measured
Signal ended direct fault location.
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