CN106324865A - Phase change material-based three-dimensional integrated optical switch - Google Patents
Phase change material-based three-dimensional integrated optical switch Download PDFInfo
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- CN106324865A CN106324865A CN201610694617.7A CN201610694617A CN106324865A CN 106324865 A CN106324865 A CN 106324865A CN 201610694617 A CN201610694617 A CN 201610694617A CN 106324865 A CN106324865 A CN 106324865A
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/0009—Materials therefor
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Abstract
The invention discloses a phase change material-based three-dimensional integrated optical switch, which comprises a lower waveguide layer, an upper waveguide layer and a middle mixed waveguide layer, wherein the upper and lower waveguide layers are distributed perpendicularly and crosswise; the middle mixed waveguide layer consists of a dielectric waveguide and a phase change material, and consists of three parts, i.e. an input tapered waveguide, a 90-degree bent waveguide and an output tapered waveguide; an electrode formed from doped silicon is manufactured on the inner side of the 90-degree bent waveguide; an electric pulse is externally applied to form a local hot spot by the middle mixed waveguide layer, thereby inducing the phase change material for phase change. Compared with a conventional 1*2 or 2*2 optical switch unit, the phase change material-based three-dimensional integrated optical switch has the advantages that the phase change material is combined with a conventional waveguide to form a composite waveguide to implement an ultra-compact optical switch with the characteristics of digital regulation, low power consumption, high integration level and the like. In addition, a preparation process is compatible with an existing CMOS (complementary metal oxide semiconductor) process, so that the technology has a large-scale low-cost production potential.
Description
Technical field
The present invention relates to a kind of based on the three-dimensionally integrated photoswitch of phase-change material, belong to integrated optoelectronics field.
Background technology
Optical signal is directly processed by All-optical switching in area of light, it is not necessary to change through optical-electrical-optical, thus not by " electricity
Sub-bottleneck " restriction, there is the plurality of advantages such as high speed, broadband, transparent, low-power consumption and potential low cost.Wherein, N × N is high
Speed optical switch chip and module are the parts that light exchange is most basic and most crucial, and its importance is equal to the process in electronic equipment
Device.Following All-optical switching high-speed high capacity to be met and low time delay exchange requirement, large port, the light exchange chip being switched fast and
Module is required, is mainly built by the light shutter device of 1 × 2 or 2 × 2, the light of 1 × 2 or 2 × 2 in experimental system
The switch performance of switch element, have impact on the performance of N × N photoswitch, so the optical switch element of development 1 × 2 and 2 × 2 is to closing
Important.
Integreted phontonics technology can significantly reduce equipment volume, reduce power consumption, cost-effective, therefore integreted phontonics technology
It is especially suitable for the extensive light exchange realizing using in all optical networks.Due to silicon based optoelectronic devices have size little,
Integrated level height, processing technology and the compatible advantage of conventional microelectronic CMOS technology, therefore Si-based optoelectronics can be significantly
Degree reduces optical switch chip cost.Silica-based photoswitch is the popular research field of recent domestic.The research worker of IBM Corporation
JOURNAL OF LIGHTWAVE TECHNOLOGY (VOL.32, NO.4) reports the photoswitch collection of 4 ports and 8 ports
Becoming chip, this chip utilizes IBM 90nm silicon light technique, includes cmos logic gate, switch drive, multi-stage light switch in chip
Array and thermo-optic phase adjusters etc., it is achieved that light path and the single-chip integration of circuit.In order to solve electric light regulation big the asking of crosstalk
Topic, they are again on JOURNAL OF LIGHTWAVE TECHNOLOGY (VOL.33, NO.20), use push-pull type to drive and realize
4 × 4 Mach of low crosstalk-increasing Dare interferometer (MZI) optical switch chip.AT&T Labs 2012 is at OPTICS EXPRESS
Reporting 8 × 8 optical switch chips based on silica-based MZI on (Vol.20, No.17), chip utilizes switch-and-select to open up
Flutterring scheme, be made up of 112 MZI, switch-mode regulation uses thermo-optic effect.The M.C.Wu group of University of California Berkeley exists
OPTICA (Vol.3, No.1) utilizes MEMS driving to control optical planar circuit, and chip uses Crossbar topological structure, it is achieved that
64 × 64 optical switch chips.Meanwhile, Zhejiang University reports a kind of base at OPTICS LETTERS (Vol.37, No.12)
Silica-based 3 × 3 photoswitches in multimode interference (MMI) structure.Shanghai Communications University OPTICS EXPRESS (VOL.24,
NO.9) 16 × 16 clog-free optical switch chips are achieved on.This chip, based on Benes topological structure, contains 56 friendships altogether
Change unit, each unit is all integrated with hot light and electric light regulation electrode, phase error compensation and ns magnitude high-speed light can be realized
Exchange, whole switch chip is integrated with hundreds of photoelectric cell altogether, presents the high density photoelectricity collection of silicon light technology well
One-tenth ability.
Under normal circumstances, Si-based OEIC device changes silicon material by thermo-optic effect or carrier dispersion effect
The characteristic of material, thus realize the regulation to silicon waveguide.But the response speed of thermo-optic effect is slow, generally at musec order；Carry
Although it is fast to flow sub-effect of dispersion response time, but the range of accommodation of its refractive index is limited, and usual refraction index changing is in 0.001 amount
Level, therefore to reach the change of 180 degree of phase places, needs the length of millimeter magnitude, cause that photoswitch is the longest, power consumption very
High.Although using high q-factor cavity resonator structure or photonic crystal slower rays structure can reduce device size, but its bandwidth of operation leading to
Often the least, loss is bigger, it is impossible to cascade on a large scale, and very sensitive to variation of ambient temperature.It is thus desirable to find a kind of permissible
Realize the material that refractive index significantly, quickly regulates, make up the deficiency of silicon materials with this, thus significantly reduce silicon light and open
The size closed and power consumption.
Summary of the invention
Present invention aims to above-mentioned the deficiencies in the prior art, in conjunction with the advantage of phase-change material, propose a kind of base
In the three-dimensionally integrated photoswitch of phase-change material, constitute composite waveguide realize surpassing with this by phase-change material is combined with conventional waveguide
Compact photoswitch.
For reaching above-mentioned purpose, the technical solution of the present invention is as follows:
A kind of three-dimensionally integrated photoswitch based on phase-change material, including: the upper ducting layer that is from top to bottom sequentially distributed, centre
Mixed recharge conducting shell and lower waveguide layer, described upper strata ducting layer and the perpendicular cross-distribution of lower floor's ducting layer, described centre is mixed
Close ducting layer to be made up of the input tapered transmission line being sequentially connected with, 90 degree of curved waveguides and output tapered transmission line, described input cone
Shape waveguide is positioned in described lower floor's waveguide, and described output tapered transmission line is positioned under described upper strata ducting layer, described
Being provided with electrode inside 90 degree of curved waveguides, this electrode is connected with external metallization pad by metal throuth hole.
Described lower waveguide layer is silicon ducting layer or silicon nitride waveguide layer.
Described upper ducting layer is silicon ducting layer or silicon nitride waveguide layer.
Described middle mixed recharge conducting shell is directly to sputter one layer of a little nanometer or the phase transformation material of tens nanometers in silicon waveguide
Material is constituted, and this phase-change material is by the elementary composition compound of Ge, Sb or Te, such as Ge2Sb2Te5, GeTe, GeSe etc..
The effective refractive index of described middle mixed recharge conducting shell to meet: when phase-change material amorphous state less than lower floor's waveguide
Effective refractive index, when phase-change material is crystalline state higher than the effective refractive index of lower floor's waveguide.
All there is gap between three described ducting layers, the packing material in this gap is silicon dioxide or silicon oxynitride etc.
Low-index material.
Described input tapered transmission line and output waveguide are positive taper (the most gradually broadening from edge), or inverted cone
(inwardly becoming narrow gradually from edge).
Described electrode is made up of doped silicon, is connected with external metallization pad by metal throuth hole, on metal pad outside
Adding electric pulse makes middle ducting layer form hot localised points, thus induced phase transition materials carries out phase transformation.
Make middle ducting layer form hot localised points by applied electronic signal excitation, so that phase-change material undergoes phase transition, lead
The effective refractive index causing composite waveguide changes, to realize optical signal from different port output.
As switch element, by different switch topology, it is possible to achieve the light that multiport enters, multiport goes out
Switch arrays chip, the field such as optical-fiber network on optic communication, sheet.
The ultimate principle of photoswitch of the present invention is: changed effective folding of composite waveguide by the state changing phase-change material
Penetrate rate, thus realize optical signal and export from different output ports, thus realize light switch function.
Compared with prior art, the solution have the advantages that: phase-change material is applied in optical switch chip, there is speed
Degree original text, low in energy consumption, the feature that cycle-index is high.Phase change film material is realized data storage as storage medium, except having
High (> 10 of read or write speed fast (ns magnitude), cycle-index12), outside the feature such as low in energy consumption, also compatible with existing CMOS technology,
Technology realizes difficulty and industry cost is relatively low.
Accompanying drawing explanation
Fig. 1 is present invention schematic diagram based on the three-dimensionally integrated photoswitch of phase-change material, and wherein middle ducting layer input is with defeated
Going out tapered transmission line is positive taper.
Fig. 2 is present invention schematic diagram based on the three-dimensionally integrated photoswitch of phase-change material, and wherein middle ducting layer input is with defeated
Going out tapered transmission line is inverted cone.
Fig. 3 is the present invention based on phase-change material three-dimensionally integrated photoswitch waveguide effective index with middle ducting layer width
(W2) change curve.
Fig. 4 is that the present invention changes along the direction of propagation based on phase-change material three-dimensionally integrated photoswitch composite waveguide mode distributions.
Fig. 5 is the present invention based on the phase transformation under current impulse of the phase-change material three-dimensionally integrated photoswitch GST material.
Detailed description of the invention
With embodiment, the present invention is further elaborated below in conjunction with the accompanying drawings, but the protection model of the present invention should not limited with this
Enclose.
Fig. 1 is present invention schematic diagram based on the three-dimensionally integrated photoswitch of phase-change material, wherein the input cone of middle ducting layer
Shape waveguide 7 and output tapered transmission line 3 are positive taper.As it is shown in figure 1, the present invention includes:
Ducting layer 2 on one；
One lower waveguide layer 8, this upper strata waveguide 2 and the perpendicular cross-distribution of lower floor's waveguide 8；
One middle mixed recharge conducting shell, is made up of three parts: input 7,90 degree of curved waveguides 6 of positive tapered transmission line and output positive cone
Shape waveguide 3, wherein makes, inside 90 degree of curved waveguides 6, the electrode 5 being made up of doped silicon, via metal throuth hole 4 and metal pad 1
It is connected, additional electric pulse on metal pad 1, just can form hot localised points at middle ducting layer, thus induced phase transition materials enters
Row phase transformation.
The photoswitch of the present invention can be realized by silica-based or silicon nitride-based material.The structure of hybrid waveguide in the middle of design
And size so that its effective refractive index is less than the effective refractive index of lower floor's waveguide when phase-change material amorphous state, and at phase transformation material
Expect for being higher than lower floor's waveguide effective index during crystalline state.The phase-change material refractive index difference when amorphous state and crystalline state is huge, because of
And above-mentioned condition can be met by designing the size of intermediate layer waveguide.According to coupled mode theory, can see after two waveguide couplings
One-tenth is composite waveguide structure, and (TE0 has even symmetry, and TE1 has odd symmetry, and TE0 is effective to there are two super model: TE0 and TE1
Refractive index is higher than TE1).TE0 is near high index waveguide, and TE1 is near low-index waveguide；When two waveguide effective index connect
Closely time (i.e. phase matched), between them, coupling becomes strong, and super model energy is more evenly distributed in two waveguides.According to such spy
Point, we can design a kind of coupled structure, and wherein lower floor's waveguide is smooth waveguide, and middle waveguide is tapered transmission line, width by
Narrow broaden.From lower floor, silicon waveguide input light can excite TE0 super model, and in middle hybrid waveguide, pattern gradually develops.At middle end
End, mode of energy distribution in two waveguides is relevant to phase-change material state: when phase-change material is amorphous state, energy mainly collects
In in lower floor's waveguide；And when phase-change material is crystalline state, in energy mainly centre to intermediate layer waveguide.Similarly, conical wave
Lead may be designed in and narrow from the width, after so input excites TE1 super model, through schema evolution, also light energy can be retained in
Lower floor's silicon waveguide or centre are in middle waveguide.
Embodiment
Just it is based on the three-dimensionally integrated photoswitch of phase-change material, input and the output waveguide of middle mixed recharge conducting shell with Fig. 1
Taper is embodiment, and waveguide uses silicon materials, and phase-change material is Ge2Sb2Te5(GST), Fig. 3 is effective refraction of the two super model
Rate is with the change curve of Si-GST duct width (W2), and during calculating, other parameters are taken as: lower waveguide layer width 0.5 μm, lower waveguide
Layer height 0.22 μm, middle ducting layer total height 0.21 μm, the GST wherein sputtered height 10nm, middle ducting layer and lower waveguide
Spacing 0.2 μm between Ceng.When middle ducting layer width less or bigger time, the effective refractive index difference between two waveguides compares
Greatly, the coupling ratio between them is more weak, thus the effective refractive index of super model is closer to the effective refractive index of single waveguide.Fig. 4
Show the light mode distributions of middle waveguide various location, here it is apparent that GST has difference under amorphous state and crystalline state
Coupling effect.Light shutter device connects after coupled waveguide 90 degree of curved waveguides of Si-GST, optical mode can be allowed from centre
Waveguide super model is gradually converted into unicast waveguide mode.At outfan, Si-GST duct width becomes narrow gradually, and makes its effective refractive index little
In the superiors' waveguide effective index, such light just can be coupled to output waveguide from Si-GST waveguide.Adopt in photoswitch designs
By tapered transmission line, compared to smooth waveguide, there is higher bandwidth, and process allowance is more preferable.Owing to GST material is at amorphous
High index of refraction change when state and crystalline state, switch element can be accomplished several micron-scale size, and use three-dimensional waveguide junction
Structure avoids waveguide cross knot, makes device architecture compacter, is suitable for the High Density Integration of switch arrays.
Realize the upset of optical switch status, need to utilize electric pulse heating induction to make GST phase-change material at amorphous state and crystalline substance
Reversible transition is there is between state.In GST crystallisation procedure from low-refraction to high index of refraction, need to apply one weak and wide
Electric pulse to its carry out local heat, when the temperature of material is between crystallization temperature and fusing point, and phase-change material will crystallize,
Thus form the crystalline state with high index, as shown in Figure 5.At GST amorphization from high index of refraction to low-refraction
In, apply a strong and narrow electric pulse and heat, make the temperature of phase-change material exceed the fusing point of material, reach to interrupt crystalline state
The purpose of chemical bond in material.Afterwards through the quenching process of a quick cooling, make in the phase-change material of molten state is former
Son has little time again bonding arrangement, forms shortrange order, the amorphous state of longrange disorder.When optical signal transmits through photoswitch,
GST material is the most weak to the absorption of light, and the faint Joule heat of generation is not enough to cause the phase transformation of GST, will not change the shape of switch
State.
The above, the only detailed description of the invention in the present invention and embodiment, but protection scope of the present invention not office
It is limited to this, any is familiar with the people of this technology in the technical scope that disclosed herein, the conversion that can readily occur in or replacement, all
Should contain within the scope of the comprising of the present invention.Therefore, protection scope of the present invention should be with the protection domain of claims
It is as the criterion.
Claims (8)
1. a three-dimensionally integrated photoswitch based on phase-change material, it is characterised in that including: the upper ripple being from top to bottom sequentially distributed
Conducting shell, middle mixed recharge conducting shell and lower waveguide layer, described upper strata ducting layer and the perpendicular cross-distribution of lower floor's ducting layer, described
Middle mixed recharge conducting shell by the input tapered transmission line being sequentially connected with, 90 degree of curved waveguides and output tapered transmission line constitute, described
Input tapered transmission line be positioned in described lower floor's waveguide, described output tapered transmission line is positioned under described upper strata ducting layer,
Being provided with electrode inside 90 degree of described curved waveguides, this electrode is connected with external metallization pad by metal throuth hole.
Three-dimensionally integrated photoswitch based on phase-change material the most according to claim 1, it is characterised in that described lower waveguide
Layer is silicon ducting layer or silicon nitride waveguide layer.
Three-dimensionally integrated photoswitch based on phase-change material the most according to claim 1, it is characterised in that described upper waveguide
Layer is silicon ducting layer or silicon nitride waveguide layer.
Three-dimensionally integrated photoswitch based on phase-change material the most according to claim 1, it is characterised in that described centre is mixed
Close the phase-change material that ducting layer is directly one layer of a little nanometer of sputtering or tens nanometers in silicon waveguide to constitute, this phase-change material be by
The elementary composition compound of Ge, Sb or Te.
Three-dimensionally integrated photoswitch based on phase-change material the most according to claim 2, it is characterised in that described centre is mixed
The effective refractive index closing ducting layer to meet: when phase-change material amorphous state less than the effective refractive index of lower floor's waveguide, in phase transformation
Higher than the effective refractive index of lower floor's waveguide when material is crystalline state.
Three-dimensionally integrated photoswitch based on phase-change material the most according to claim 1, it is characterised in that three described ripples
All there is gap between conducting shell, the packing material in this gap is the low-index material such as silicon dioxide or silicon oxynitride.
Three-dimensionally integrated photoswitch based on phase-change material the most according to claim 1, it is characterised in that described input cone
Shape waveguide and output waveguide are positive tapers, i.e. the most gradually broaden from edge, or inverted cone, i.e. the most gradually become from edge
Narrow.
Three-dimensionally integrated photoswitch based on phase-change material the most according to claim 1, it is characterised in that described electrode by
Doped silicon is constituted, and is connected with external metallization pad by metal throuth hole, and on metal pad, additional electric pulse makes middle ducting layer
Form hot localised points, thus induced phase transition materials carries out phase transformation.
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Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108279511A (en) * | 2017-12-28 | 2018-07-13 | 宁波大学 | A kind of electrooptic modulator based on phase-change material |
| CN109283768A (en) * | 2018-09-26 | 2019-01-29 | 京东方科技集团股份有限公司 | Optical communication switch, light control method, array substrate and display device |
| CN109655975A (en) * | 2019-01-16 | 2019-04-19 | 浙江大学 | A kind of erasable integrated light guide monitoring devices based on phase-change material |
| CN109917565A (en) * | 2019-02-18 | 2019-06-21 | 上海交通大学 | Based on the multistage optical attenuator of silicon-phase-change material hybrid integrated |
| CN110286444A (en) * | 2019-06-14 | 2019-09-27 | 浙江大学 | A kind of restructural micro-loop photoswitch based on phase-change material |
| CN111061069A (en) * | 2020-01-03 | 2020-04-24 | 宁波大学 | Electro-optical modulator of groove type composite waveguide based on silicon and phase change material |
| CN111399117A (en) * | 2020-04-30 | 2020-07-10 | 中国科学院半导体研究所 | Hybrid integrated silicon nitride micro-ring resonant cavity and preparation method thereof |
| CN111999957A (en) * | 2020-07-17 | 2020-11-27 | 宁波大学 | Polarization insensitive photosensitive switch based on assistance of germanium antimony tellurium compound phase change material |
| CN112099140A (en) * | 2020-10-29 | 2020-12-18 | 歌尔股份有限公司 | Diffraction optical waveguide with uniform emergent brightness, manufacturing method and head-mounted display device |
| CN112987175A (en) * | 2021-03-03 | 2021-06-18 | 南京理工大学 | Mode selection vertical coupler applied to multilayer photonic platform |
| US11226451B2 (en) * | 2019-01-24 | 2022-01-18 | Electronics And Telecommunications Research Institute | Three-dimensional optical switch |
| US11231635B2 (en) * | 2019-11-19 | 2022-01-25 | Hrl Laboratories, Llc | Electrically-controllable 3D optical waveguide switch with phase change materials |
| US11294119B1 (en) | 2020-11-19 | 2022-04-05 | Cisco Technology, Inc. | Multimode-interference waveguide crossings |
| CN114296182A (en) * | 2022-01-07 | 2022-04-08 | 吉林大学 | Three-dimensional optical interleaver based on silicon-based optical waveguide and preparation method thereof |
| CN114721089A (en) * | 2022-06-08 | 2022-07-08 | 深圳大学 | Phased array radar system based on phase change material photoswitch |
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Cited By (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108279511A (en) * | 2017-12-28 | 2018-07-13 | 宁波大学 | A kind of electrooptic modulator based on phase-change material |
| CN109283768A (en) * | 2018-09-26 | 2019-01-29 | 京东方科技集团股份有限公司 | Optical communication switch, light control method, array substrate and display device |
| CN109655975A (en) * | 2019-01-16 | 2019-04-19 | 浙江大学 | A kind of erasable integrated light guide monitoring devices based on phase-change material |
| US11226451B2 (en) * | 2019-01-24 | 2022-01-18 | Electronics And Telecommunications Research Institute | Three-dimensional optical switch |
| CN109917565A (en) * | 2019-02-18 | 2019-06-21 | 上海交通大学 | Based on the multistage optical attenuator of silicon-phase-change material hybrid integrated |
| CN110286444B (en) * | 2019-06-14 | 2020-07-14 | 浙江大学 | Reconfigurable micro-ring optical switch based on phase change material |
| CN110286444A (en) * | 2019-06-14 | 2019-09-27 | 浙江大学 | A kind of restructural micro-loop photoswitch based on phase-change material |
| US11231635B2 (en) * | 2019-11-19 | 2022-01-25 | Hrl Laboratories, Llc | Electrically-controllable 3D optical waveguide switch with phase change materials |
| EP4062213A4 (en) * | 2019-11-19 | 2023-11-22 | HRL Laboratories LLC | Electrically-controllable 3d optical waveguide switch with phase change materials |
| CN114868054A (en) * | 2019-11-19 | 2022-08-05 | Hrl实验室有限责任公司 | Electrically controlled 3D optical waveguide switch using phase change materials |
| CN111061069A (en) * | 2020-01-03 | 2020-04-24 | 宁波大学 | Electro-optical modulator of groove type composite waveguide based on silicon and phase change material |
| CN111061069B (en) * | 2020-01-03 | 2023-05-12 | 宁波大学 | Electro-optic modulator of groove type composite waveguide based on silicon and phase change material |
| CN111399117A (en) * | 2020-04-30 | 2020-07-10 | 中国科学院半导体研究所 | Hybrid integrated silicon nitride micro-ring resonant cavity and preparation method thereof |
| CN111999957A (en) * | 2020-07-17 | 2020-11-27 | 宁波大学 | Polarization insensitive photosensitive switch based on assistance of germanium antimony tellurium compound phase change material |
| CN111999957B (en) * | 2020-07-17 | 2022-08-05 | 宁波大学 | Polarization insensitive photosensitive switch based on assistance of germanium antimony tellurium compound phase change material |
| CN112099140A (en) * | 2020-10-29 | 2020-12-18 | 歌尔股份有限公司 | Diffraction optical waveguide with uniform emergent brightness, manufacturing method and head-mounted display device |
| US11294119B1 (en) | 2020-11-19 | 2022-04-05 | Cisco Technology, Inc. | Multimode-interference waveguide crossings |
| CN112987175A (en) * | 2021-03-03 | 2021-06-18 | 南京理工大学 | Mode selection vertical coupler applied to multilayer photonic platform |
| CN114296182A (en) * | 2022-01-07 | 2022-04-08 | 吉林大学 | Three-dimensional optical interleaver based on silicon-based optical waveguide and preparation method thereof |
| CN114296182B (en) * | 2022-01-07 | 2024-04-12 | 吉林大学 | Three-dimensional optical interleaver based on silicon-based optical waveguide and preparation method thereof |
| CN114721089A (en) * | 2022-06-08 | 2022-07-08 | 深圳大学 | Phased array radar system based on phase change material photoswitch |
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