CN106301242A - Current multiplexing type radio-frequency amplifier circuit - Google Patents
Current multiplexing type radio-frequency amplifier circuit Download PDFInfo
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- CN106301242A CN106301242A CN201610839311.6A CN201610839311A CN106301242A CN 106301242 A CN106301242 A CN 106301242A CN 201610839311 A CN201610839311 A CN 201610839311A CN 106301242 A CN106301242 A CN 106301242A
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- nmos pass
- pass transistor
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- amplifier
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Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
- H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
- H03F1/0211—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers with control of the supply voltage or current
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/26—Modifications of amplifiers to reduce influence of noise generated by amplifying elements
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/193—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/45—Differential amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/45—Differential amplifiers
- H03F3/45071—Differential amplifiers with semiconductor devices only
- H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
- H03F3/45179—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/45—Indexing scheme relating to differential amplifiers
- H03F2203/45031—Indexing scheme relating to differential amplifiers the differential amplifier amplifying transistors are compositions of multiple transistors
Abstract
The present invention relates to a kind of current multiplexing type radio-frequency amplifier circuit, it is characterized in that: include using the first order amplifier circuit of stacking form and second level amplifier circuit and respectively first order amplifier circuit and second level amplifier circuit to provide the biasing circuit of DC offset voltage；Described first order amplifying circuit uses identical common source pseudo-differential circuit structure with second level amplifying circuit, and output loading is resistance；The output end signal of described first order amplifying circuit is connected to the input of second level amplifying circuit by ac coupling capacitor, and the output end signal of second level amplifying circuit is as the output signal of radio-frequency amplifier circuit.The radio-frequency amplifier circuit of current multiplexing structure of the present invention, it is possible to realize the function that two-stage signal is amplified.The present invention uses the form that dual-stage amplifier stacks, common DC bias current, is rationally arranged the DC point of amplifier by biasing circuit, makes full use of less DC power and obtains bigger gain and less noise.
Description
Technical field
The present invention relates to a kind of current multiplexing type radio-frequency amplifier circuit, belong to IC design technical field.
Background technology
Low power design technique is the important technique direction of integrated circuit and development trend, realizes with lower power consumption
Desired properties index.High frequency amplifier occupies an important position in high frequency communication circuits, the noiseproof feature of high frequency front-end system
Depending primarily on the high frequency amplifier being positioned at signal chains foremost, the noise of late-class circuit is carried out by the gain of high frequency amplifier
Suppression, therefore high frequency amplifier needs relatively low noise coefficient and higher gain.Meanwhile, the noise of amplifier is generally with straight
Stream operating current is inversely proportional to, therefore to obtain less noise, amplifier needs bigger working direct current.Conventional highfrequency
Amplifier, in order to obtain larger gain, generally uses the structure (as shown in Figure 1) of multi-stage cascade, due in order to obtain less making an uproar
Sound, therefore every grade of DC power is the biggest, so overall power just occupies larger specific gravity in front-end circuit.
It is the design focal point of high frequency amplifier with the less power consumption bigger gain of acquisition and less noise.
Summary of the invention
It is an object of the invention to overcome the deficiencies in the prior art, it is provided that a kind of current multiplexing type high frequency amplifier electricity
Road, it is possible to make full use of less DC power and obtain bigger gain and less noise.
The technical scheme provided according to the present invention, described current multiplexing type radio-frequency amplifier circuit, it is characterized in that: include adopting
With the stacking first order amplifier circuit of form and second level amplifier circuit and respectively first order amplifier circuit and the
Two-stage amplifier circuit provides the biasing circuit of DC offset voltage；Described first order amplifying circuit and second level amplifying circuit are adopted
With identical common source pseudo-differential circuit structure, output loading is resistance；The output end signal of described first order amplifying circuit passes through
Ac coupling capacitor is connected to the input of second level amplifying circuit, and the output end signal of second level amplifying circuit is put as high frequency
The output signal of big device circuit.
Further, described biasing circuit is made up of two parts, and Part I includes operational amplifier, operational amplifier
Output is connected respectively to the grid of the differential pair of first order amplifier circuit by two biasing resistors, it is provided that direct current biasing electricity
Pressure；Part II includes nmos pass transistor, and the grid of nmos pass transistor and drain electrode connect, and are connected respectively by two biasing resistors
Receive the grid of the differential pair of second level amplifier circuit, it is provided that DC offset voltage.
Further, the output load resistance of described first order amplifier circuit is connected to the difference of second level amplifier circuit
Point to the source electrode of two nmos pass transistors, be simultaneously connected to the positive pole input of operational amplifier in biasing circuit Part I
End.
Further, described first order amplifier circuit include the first nmos pass transistor NM1, the second nmos pass transistor NM2,
First electric capacity C1, the second electric capacity C2, the first resistance R1 and the second resistance R2；Amplifier positive input terminal VIP is connected to the first electric capacity
C1 one end, the other end of the first electric capacity C1 connects the grid of the first nmos pass transistor NM1, and amplifier negative input end VIN is connected to
Second electric capacity C2 one end, the other end of the second electric capacity C2 and the grid of the first nmos pass transistor NM2 connect, the first nmos pass transistor
NM1 and the source ground of the second nmos pass transistor NM2, one end of the first resistance R1 connects the drain electrode of the first nmos pass transistor NM1,
The junction point of the first resistance R1 and the first nmos pass transistor NM1 drain electrode is as the negative output terminal of first order amplifier, the second resistance
One end of R2 connects the drain electrode of the second nmos pass transistor NM2, the junction point of the second resistance R2 and the second nmos pass transistor NM2 drain electrode
Connect as the positive output end of first order amplifier, the other end of the first resistance R1 and the other end of the second resistance R2.
Further, described second level amplifier circuit include the 3rd nmos pass transistor NM3, the 4th nmos pass transistor NM4,
3rd electric capacity C3, the 4th electric capacity C4, the 3rd resistance R3 and the 4th resistance R4；The negative output terminal of first order amplifier is connected to the 3rd
Electric capacity C3 one end, the other end of the 3rd electric capacity C3 connects the grid of the 3rd nmos pass transistor NM3, the positive output of first order amplifier
End is connected to the 4th electric capacity C4 one end, and the other end of the 4th electric capacity C4 and the grid of the 4th nmos pass transistor NM4 connect, and the 3rd
The source electrode of nmos pass transistor NM3 and the 4th nmos pass transistor NM4 is connected, and is connected to the first resistance R1 of first order amplifier
With the junction point of the second resistance R2, one end of the 3rd resistance R3 connects the drain electrode of the 3rd nmos pass transistor NM3, the 3rd resistance R3 and
The junction point of the 3rd nmos pass transistor NM3 drain electrode is as the positive output end VON, the 4th resistance R4 of current multiplexing type high frequency amplifier
One end connect the 4th nmos pass transistor NM4 drain electrode, the 4th resistance R4 and the 4th nmos pass transistor NM4 drain electrode junction point make
Equal for the negative output terminal VOP of current multiplexing type high frequency amplifier, the other end of the 3rd resistance R3 and the other end of the 4th resistance R4
It is connected to power supply.
Further, described biasing circuit include bias current IB, the 5th nmos pass transistor NM0, operational amplifier OPA,
First biasing resistor RB1, the second biasing resistor RB2, the 3rd biasing resistor RB3 and the 4th biasing resistor RB4；Bias current IB mono-
End connects power supply, and the other end connects the grid of the 5th nmos pass transistor NM0 and drain electrode, and be connected to the 3rd biasing resistor RB3 and
One end of 4th biasing resistor RB4, the other end of the 3rd biasing resistor RB3 is connected to the grid of the 3rd nmos pass transistor NM3, the
The other end of four biasing resistor RB4 is connected to the grid of the 4th nmos pass transistor NM4；
The positive input terminal of operational amplifier OPA is connected to the first resistance R1 and the connection of the second resistance R4 of first order amplifier
Point, is connected with the source electrode of the 3rd nmos pass transistor NM3 and the 4th nmos pass transistor NM4 of second level amplifier simultaneously, and computing is put
The negative input end of big device OPA connects reference voltage VREF；The outfan of described operational amplifier OPA connects mends the first biasing resistor
RB1 and one end of the second biasing resistor RB2, the other end of the first biasing resistor RB1 is connected to the grid of the first nmos pass transistor NM1
Pole, the other end of the second biasing resistor RB2 is connected to the grid of the second nmos pass transistor NM2.
Further, the outfan of described operational amplifier OPA is also connected with compensating one end of electric capacity CL, compensates electric capacity CL's
The other end is connected to the first nmos pass transistor NM1 and the source electrode of the second nmos pass transistor NM2.
Further, the value of described reference voltage V REF is the half of supply voltage.
The radio-frequency amplifier circuit of current multiplexing structure of the present invention, it is possible to realize the function that two-stage signal is amplified.This
Invention uses the form of dual-stage amplifier stacking, common DC bias current, is rationally arranged the straight of amplifier by biasing circuit
Stream operating point, makes full use of less DC power and obtains bigger gain and less noise.
Accompanying drawing explanation
Fig. 1 is the structured flowchart of multistage amplifier.
Fig. 2 is the schematic diagram of current multiplexing type radio-frequency amplifier circuit of the present invention.
Detailed description of the invention
Below in conjunction with concrete accompanying drawing, the invention will be further described.
As shown in Figure 2: described current multiplexing type radio-frequency amplifier circuit includes that first order amplifier circuit 21, the second level are put
Big device circuit 22 and biasing circuit 23.
Described first order amplifier circuit 21 is identical with second level amplifier circuit 22 circuit structure, uses artifact fractal
Formula, first order amplifier circuit " power supply " end with second level amplifier circuit " " hold be connected, i.e. use stacked structure
Form.
Described biasing circuit 23, thus provides providing gate bias voltage for second level amplifier circuit 22 input difference
Bias current, first order amplifier and second level amplifier current multiplexing, answer so this bias voltage is electric current of the present invention
Bias current is provided with type high frequency amplifier；Described biasing circuit 23 is the first order by operational amplifier composition negative feedback loop
The i.e. second level amplifier of " power supply " of amplifier " " bias voltage fixed is provided.
As in figure 2 it is shown, described first order amplifier circuit 21 and second level amplifier circuit 22 use identical common source pseudo-
Difference channel structure realizes, and output loading is resistance；The output end signal of described first order amplifier circuit passes through AC coupled
Electric capacity is connected to the input of second level amplifier circuit, carries out second level amplification, the output letter of second level amplifier circuit
Number as the output signal of overall amplifier.Specifically:
Described first order amplifier circuit 21 include the first nmos pass transistor NM1, the second nmos pass transistor NM2, the first electric capacity C1,
Second electric capacity C2, the first resistance R1 and the second resistance R2；Amplifier positive input terminal VIP is connected to first electric capacity C1 one end, and first
The other end of electric capacity C1 connects the grid of the first nmos pass transistor NM1, and amplifier negative input end VIN is connected to the second electric capacity C2 mono-
End, the other end of the second electric capacity C2 and the grid of the first nmos pass transistor NM2 connect, the first nmos pass transistor NM1 and second
The source ground of nmos pass transistor NM2, one end of the first resistance R1 connects the drain electrode of the first nmos pass transistor NM1, and this point is made
For the negative output terminal of first order amplifier, one end of the second resistance R2 connects the drain electrode of the second nmos pass transistor NM2, and this point is made
Connect for the positive output end of first order amplifier, the other end of the first resistance R1 and the other end of the second resistance R2；
Described second level amplifier circuit 22 include the 3rd nmos pass transistor NM3, the 4th nmos pass transistor NM4, the 3rd electric capacity C3,
4th electric capacity C4, the 3rd resistance R3 and the 4th resistance R4；The negative output terminal of first order amplifier is connected to the 3rd electric capacity C3 one end,
The other end of the 3rd electric capacity C3 connects the grid of the 3rd nmos pass transistor NM3, and the positive output end of first order amplifier is connected to the
Four electric capacity C4 one end, the other end of the 4th electric capacity C4 and the grid of the 4th nmos pass transistor NM4 connect, the 3rd nmos pass transistor
The source electrode of NM3 and the 4th nmos pass transistor NM4 is connected, and is connected to the first resistance R1 and second resistance of first order amplifier
The junction point of R2, one end of the 3rd resistance R3 connects the drain electrode of the 3rd nmos pass transistor NM3, and this point is high as current multiplexing type
One end of the positive output end VON of audio amplifier, the 4th resistance R4 connects the drain electrode of the 4th nmos pass transistor NM4, this point conduct
The negative output terminal VOP of current multiplexing type high frequency amplifier, the other end of the 3rd resistance R3 and the other end of the 4th resistance R4 all connect
Receive power supply.
Described biasing circuit 23 is made up of two parts, and respectively dual-stage amplifier provides DC offset voltage.Part I
Being formed feedback loop by operational amplifier OPA, the output of operational amplifier OPA is coupled with first by two biasing resistors
The grid of level amplifier input difference pair, it is provided that DC offset voltage；Part II uses the metal-oxide-semiconductor shape of diode type of attachment
Formula, its grid and drain electrode connect, and are connected respectively to the grid of second level amplifier differential pair by two biasing resistors, it is provided that
DC offset voltage.Specifically:
Described biasing circuit 23 includes bias current IB, the 5th nmos pass transistor NM0, operational amplifier OPA, the first biasing resistor
RB1, the second biasing resistor RB2, the 3rd biasing resistor RB3 and the 4th biasing resistor RB4；Bias current IB one end connects power supply,
The other end connects grid and the drain electrode of the 5th nmos pass transistor NM0, and is connected to the 3rd biasing resistor RB3 and the 4th biasing resistor
One end of RB4, the other end of the 3rd biasing resistor RB3 is connected to the grid of the 3rd nmos pass transistor NM3, the 4th biasing resistor
The other end of RB4 is connected to the grid of the 4th nmos pass transistor NM4；
The positive input terminal of operational amplifier OPA is connected to the first resistance R1 and the connection of the second resistance R4 of first order amplifier
Point, is connected with the source electrode of the 3rd nmos pass transistor NM3 and the 4th nmos pass transistor NM4 of second level amplifier simultaneously, and computing is put
The negative input end of big device OPA connects reference voltage VREF, and the value of reference voltage V REF is generally chosen for the half of supply voltage, i.e.
VDD/2.The outfan of operational amplifier OPA connects compensation one end of electric capacity CL, the first biasing resistor RB1 and the second biasing resistor
One end of RB2, the other end of the first biasing resistor RB1 is connected to the grid of the first nmos pass transistor NM1, the second biasing resistor
The other end of RB2 is connected to the grid of the second nmos pass transistor NM2.
The operation principle of the present invention: current multiplexing type high frequency amplifier of the present invention, the two-stage including stacking form is put
Big device circuit and biasing circuit；Dual-stage amplifier circuit is core cell, for the amplification of high-frequency signal；Biasing circuit is two-stage
Amplifier circuit provides direct current biasing.The type of attachment focusing on dual-stage amplifier of this invention is to stack and the level of non-generic
Connection mode.Use stacking form to carry out working direct current multiplexing, thus reduce amplifier overall power.
Differential pair (NM1, NM2) forms the amplifier architecture of pseudo-differential form with load resistance (R1, R2), to through overcoupling
The input signal of electric capacity C1, C2 AC coupled is amplified；Signal after amplification carries out exchanging coupling by coupling electric capacity C3, C4 again
Conjunction is input to second level amplifier, and its structure is identical with the first order, and same employing pseudo differential architectures realizes, and output is described electricity
The output of stream composite high frequency amplifier.
In biasing circuit, IB provides bias current, is second level amplifier by transistor NM0, biasing resistor RB3 and RB4
Differential pair (NM3, NM4) provides bias, thus provides the bias current of equal proportion；The first order amplifier of described high frequency amplifier
The i.e. second level amplifier 22 of " power supply " end of 21 " " hold as the positive input terminal of operational amplifier OPA, base in biasing circuit
Quasi-voltage VREF is as negative input end, and the outfan of operational amplifier OPA is that the first order is amplified through biasing resistor RB1 and RB2
The differential pair of device 21 provides grid bias, and the output capacitor CL of operational amplifier OPA is used for the frequency compensation of feedback control loop, with
The frequency stability of regulation feedback loop.
Technical scheme, by using stacked structure to design dual-stage amplifier so that can be inclined with multiplexing direct current
Put electric current, thus rationally limit power consumption on the basis of ensureing gain.
Claims (8)
1. a current multiplexing type radio-frequency amplifier circuit, is characterized in that: include the first order amplifier electricity using stacking form
Road (21) and second level amplifier circuit (22) and respectively first order amplifier circuit (21) and second level amplifier circuit
(22) biasing circuit (23) of DC offset voltage is provided；Described first order amplifying circuit (21) and second level amplifying circuit (22)
Using identical common source pseudo-differential circuit structure, output loading is resistance；The outfan letter of described first order amplifying circuit (21)
The input of second level amplifying circuit (22), the outfan of second level amplifying circuit (22) number it is connected to by ac coupling capacitor
Signal is as the output signal of radio-frequency amplifier circuit.
2. current multiplexing type radio-frequency amplifier circuit as claimed in claim 1, is characterized in that: described biasing circuit is by two parts
Constituting, Part I includes operational amplifier, and the output of operational amplifier is connected respectively to the first order by two biasing resistors
The grid of the differential pair (NM1, NM2) of amplifier circuit (21), it is provided that DC offset voltage；Part II includes NMOS crystal
Pipe, the grid of nmos pass transistor and drain electrode connect, and are connected respectively to second level amplifier circuit by two biasing resistors
(22) grid of differential pair (NM3, NM4), it is provided that DC offset voltage.
3. current multiplexing type radio-frequency amplifier circuit as claimed in claim 2, is characterized in that: described first order amplifier circuit
(21) output load resistance is connected to two nmos pass transistors of the differential pair (NM3, NM4) of second level amplifier circuit (22)
Source electrode, be simultaneously connected to the electrode input end of operational amplifier in biasing circuit Part I.
4. the current multiplexing type radio-frequency amplifier circuit as described in claim 1,2 or 3, is characterized in that: the described first order is amplified
Device circuit (21) include the first nmos pass transistor NM1, the second nmos pass transistor NM2, the first electric capacity C1, the second electric capacity C2, first
Resistance R1 and the second resistance R2；Amplifier positive input terminal VIP is connected to first electric capacity C1 one end, and the other end of the first electric capacity C1 is even
Connecing the grid of the first nmos pass transistor NM1, amplifier negative input end VIN is connected to second electric capacity C2 one end, the second electric capacity C2's
The grid of the other end and the first nmos pass transistor NM2 connects, the first nmos pass transistor NM1 and the source of the second nmos pass transistor NM2
Pole ground connection, one end of the first resistance R1 connects the drain electrode of the first nmos pass transistor NM1, the first resistance R1 and the first nmos pass transistor
The junction point of NM1 drain electrode is as the negative output terminal of first order amplifier, and one end of the second resistance R2 connects the second nmos pass transistor
The drain electrode of NM2, the junction point of the second resistance R2 and the second nmos pass transistor NM2 drain electrode is as the positive output of first order amplifier
End, the other end of the first resistance R1 and the other end of the second resistance R2 connect.
5. the current multiplexing type radio-frequency amplifier circuit as described in claim 1,2 or 3, is characterized in that: the described second level is amplified
Device circuit (22) include the 3rd nmos pass transistor NM3, the 4th nmos pass transistor NM4, the 3rd electric capacity C3, the 4th electric capacity C4, the 3rd
Resistance R3 and the 4th resistance R4；The negative output terminal of first order amplifier is connected to the 3rd electric capacity C3 one end, and the 3rd electric capacity C3's is another
One end connects the grid of the 3rd nmos pass transistor NM3, and the positive output end of first order amplifier is connected to the 4th electric capacity C4 one end, the
The other end of four electric capacity C4 and the grid of the 4th nmos pass transistor NM4 connect, the 3rd nmos pass transistor NM3 and the 4th NMOS crystal
The source electrode of pipe NM4 is connected, and is connected to the first resistance R1 and the junction point of the second resistance R2 of first order amplifier, the 3rd electricity
One end of resistance R3 connects the drain electrode of the 3rd nmos pass transistor NM3, the connection of the 3rd resistance R3 and the 3rd nmos pass transistor NM3 drain electrode
Point connects the 4th nmos pass transistor NM4 as one end of the positive output end VON, the 4th resistance R4 of current multiplexing type high frequency amplifier
Drain electrode, negative as current multiplexing type high frequency amplifier of the junction point of the 4th resistance R4 and the 4th nmos pass transistor NM4 drain electrode
Outfan VOP, the other end of the 3rd resistance R3 and the other end of the 4th resistance R4 are all connected to power supply.
6. the current multiplexing type radio-frequency amplifier circuit as described in claim 1,2 or 3, is characterized in that: described biasing circuit
(23) bias current IB, the 5th nmos pass transistor NM0, operational amplifier OPA, the first biasing resistor RB1, the second biased electrical are included
Resistance RB2, the 3rd biasing resistor RB3 and the 4th biasing resistor RB4；Bias current IB one end connects power supply, and the other end connects the 5th
The grid of nmos pass transistor NM0 and drain electrode, and it is connected to the 3rd biasing resistor RB3 and one end of the 4th biasing resistor RB4, the 3rd
The other end of biasing resistor RB3 is connected to the grid of the 3rd nmos pass transistor NM3, and the other end of the 4th biasing resistor RB4 connects
Grid to the 4th nmos pass transistor NM4；
The positive input terminal of operational amplifier OPA is connected to the first resistance R1 and the connection of the second resistance R4 of first order amplifier
Point, is connected with the source electrode of the 3rd nmos pass transistor NM3 and the 4th nmos pass transistor NM4 of second level amplifier simultaneously, and computing is put
The negative input end of big device OPA connects reference voltage VREF；The outfan of described operational amplifier OPA connects mends the first biasing resistor
RB1 and one end of the second biasing resistor RB2, the other end of the first biasing resistor RB1 is connected to the grid of the first nmos pass transistor NM1
Pole, the other end of the second biasing resistor RB2 is connected to the grid of the second nmos pass transistor NM2.
7. current multiplexing type radio-frequency amplifier circuit as claimed in claim 5, is characterized in that: described operational amplifier OPA's
Outfan is also connected with compensating one end of electric capacity CL, and the other end compensating electric capacity CL is connected to the first nmos pass transistor NM1 and second
The source electrode of nmos pass transistor NM2.
8. current multiplexing type radio-frequency amplifier circuit as claimed in claim 5, is characterized in that: the value of described reference voltage V REF
Half for supply voltage.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610839311.6A CN106301242A (en) | 2016-09-21 | 2016-09-21 | Current multiplexing type radio-frequency amplifier circuit |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201610839311.6A CN106301242A (en) | 2016-09-21 | 2016-09-21 | Current multiplexing type radio-frequency amplifier circuit |
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| CN201610839311.6A Withdrawn CN106301242A (en) | 2016-09-21 | 2016-09-21 | Current multiplexing type radio-frequency amplifier circuit |
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| CN107911085A (en) * | 2017-12-21 | 2018-04-13 | 北京遥感设备研究所 | A kind of Ku Band LNAs |
| CN107911085B (en) * | 2017-12-21 | 2019-02-19 | 北京遥感设备研究所 | A kind of Ku Band LNA |
| CN108649973A (en) * | 2018-03-14 | 2018-10-12 | 湖北楚航电子科技有限公司 | A kind of multichannel number transmission transmitter and combined type number pass emitter |
| CN108649973B (en) * | 2018-03-14 | 2020-01-14 | 湖北楚航电子科技有限公司 | Multi-channel data transmission transmitter and combined data transmission transmitting device |
| CN111162780A (en) * | 2019-12-31 | 2020-05-15 | 中电国基南方集团有限公司 | Low-current high-voltage amplitude-phase control system |
| CN111162780B (en) * | 2019-12-31 | 2023-10-27 | 中电国基南方集团有限公司 | Low-current high-voltage amplitude-phase control system |
| CN112690799A (en) * | 2020-12-25 | 2021-04-23 | 南京邮电大学 | Low-power consumption chopper amplifier circuit |
| CN113114145A (en) * | 2021-05-20 | 2021-07-13 | 宜矽源半导体南京有限公司 | Low-offset differential output circuit structure |
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