CN106276773A - MEMS infrared light supply of suspension structure and preparation method thereof - Google Patents
MEMS infrared light supply of suspension structure and preparation method thereof Download PDFInfo
- Publication number
- CN106276773A CN106276773A CN201610797210.7A CN201610797210A CN106276773A CN 106276773 A CN106276773 A CN 106276773A CN 201610797210 A CN201610797210 A CN 201610797210A CN 106276773 A CN106276773 A CN 106276773A
- Authority
- CN
- China
- Prior art keywords
- layer
- heating
- zone
- suspension structure
- infrared light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/0009—Structural features, others than packages, for protecting a device against environmental influences
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00023—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems without movable or flexible elements
- B81C1/00039—Anchors
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Health & Medical Sciences (AREA)
- General Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Computer Hardware Design (AREA)
- Micromachines (AREA)
Abstract
Present invention MEMS infrared light supply disclosing a kind of suspension structure and preparation method thereof.The MEMS infrared light supply of described suspension structure includes the infrared light supply structure on membrane suspension structure and described suspension structure；Described membrane suspension structure is patterned supporting layer, and described supporting layer is the four beam fixed support structures being deposited on the concave arc shape on carrying substrate；Described infrared light supply structure includes: zone of heating, sealing coat, patterned metal electrode and radiating layer；Described zone of heating is deposited on above described supporting layer, and described patterned metal electrode deposition is connected on described supporting layer and with described zone of heating side；Described sealing coat is prepared on described zone of heating；Described radiating layer is prepared at described sealing coat upper surface；Described radiating layer, sealing coat, zone of heating and supporting layer are all suspended on the carrying substrate of back cavity and form described membrane suspension structure.The present invention can be greatly decreased heat conduction via, reduces thermal mass, improves the performance of infrared light supply.
Description
Technical field
The present invention relates to infrared light supply technical field, particularly relate to MEMS infrared light supply and the preparation thereof of a kind of suspension structure
Method.
Background technology
Along with developing rapidly of global economy, earth environment is continuous worsening, and various discharges poisonous, harmful gas cause
Air pollution problems inherent is increasingly serious, has had a strong impact on the survival and development of mankind itself.Enter 21st century, along with information skill
The maturation of art and people's concern to environmental problem, bring the huge market demand for gas sensor.
It is former that gas sensor based on non-dispersive infrared absorption spectrum (NDIR) overcomes traditional Catalysis Principles, electrochemistry
Process gases sensor is easily poisoned aging, the shortcoming such as the life-span is short, has that accuracy of detection is high, range is big, reliability is high, service life
The advantage that length etc. are generally acknowledged, thus become the focus of research and the developing direction that gas sensor is following.At NDIR gas sensor
In, infrared light supply launch infrared light, carbon dioxide, carbon monoxide, methane etc. can produce dipole moment change gas molecule due to
Resonance can be produced with infrared light and be absorbed, and specific gas molecule only can resonate with the infrared light of specific wavelength, no
Same gas concentration can cause infrared light absorbed energy different, thus detector can detect infrared energy at the other end
Change, and with this analyze gas componant and calculate gas concentration.Typically infrared photosensitive to change due to Infrared Detectors
Sense, traditional NDIR gas sensor needs to install a mechanical chopper at infrared light supply and produces transformable infrared
Light, this labyrinth can not meet gas sensor miniaturization, portability and the requirement of low power consumption.The development of MEMS technology
Achieve electric modulated infrared light supply, successfully solve this problem.
MEMS infrared light supply is as the core component of NDIR gas sensor, and its performance drastically influence gas sensor and visits
The accuracy surveyed and sensitivity, current small size, low-power consumption and high emissivity feature and preparation technology simply can electrical modulation
The development of MEMS infrared light supply becomes the study hotspot of current semiconductor gas sensor.
Chinese patent CN104591076A discloses a kind of infrared light supply chip based on nanostructured, uses close-packed arrays
Nanometer deep hole membrane structure improve radiation efficiency as radiating layer, chip is provided with substrate, supporting layer, electric heating layer, nano junction
Structure radiating layer, metal electrode；Supporting layer, electric heating layer, nanostructured radiating layer are all suspended in above substrate and form suspension bridge
Face structure, reduces heat conduction losses.This patent uses dry etching to form back cavity, it is easy to release occur not exclusively, greatly
Part is silica-based to be connected with structure, substantially reduces radiation efficiency.
Chinese patent CN103500788A discloses a kind of nanostructured infrared light supply that can be integrated, utilizes MEMS/CMOS work
Skill, carries out nano-modified processing to amorphous silicon surfaces, forms cone-shaped nano structure, then cone-shaped nano structure is carried out TiN coating
Processing；Finally use front XeF2Release tech, carries out deep silicon etching to silicon substrate, reduces heat in silicon silk ohm heating process
In loss, improve light source operating power.This patent uses last front dry etching to form release cavity, easily to knot
It is configured to damage, and technological operation is complex.
Summary of the invention
In view of this, present invention MEMS infrared light supply that a kind of suspension structure is provided and preparation method thereof, it is possible to significantly subtract
Few heat conduction loss, improves the radiation efficiency of light source, and simple to operate, power consumption is relatively low, and stability is high, and compatible with CMOS technology.
The present invention provides the MEMS infrared light supply of a kind of suspension structure, including in membrane suspension structure and described suspension structure
Infrared light supply structure；Described membrane suspension structure is patterned supporting layer, and described supporting layer is for being deposited on carrying substrate
Four beam fixed support structures of concave arc shape；Described infrared light supply structure includes: zone of heating, sealing coat, patterned metal electrode and
Radiating layer；Described zone of heating is deposited on above described supporting layer, and described patterned metal electrode deposition is on described supporting layer
And it is connected with described zone of heating side；Described sealing coat is prepared on described zone of heating；Described radiating layer is prepared described
Sealing coat upper surface；Described radiating layer, sealing coat, zone of heating and supporting layer are all suspended on the carrying substrate of back cavity formation
Described membrane suspension structure.
Optionally, described supporting layer is silicon oxide, silicon nitride or silicon oxide and silicon nitride multilayer complex films supporting layer, institute
State supporting layer and carrying substrate contact and middle four isolation moat structures for concave arc shape；Described carrying substrate is that silicon is square
The silicon-based substrate of framework.
Optionally, described sealing coat is silicon oxide sealing coat or nitride spacer, by described zone of heating and described radiation
Layer electric isolution.
Optionally, described zone of heating is semi-conducting material rectangle zone of heating, is deposited on described supporting layer.
Optionally, described metal electrode is single-layer metal electrode, or complex metal layer electrode, electrode under-layer use titanium or
Chromium metal is as adhesion layer, and on adhesion layer, deposition has gold, platinum or aluminum metal.
Optionally, described radiating layer uses reactive ion etching etches polycrystalline silicon, and the taper forming the most upright arrangement is gloomy
The nano silicon material of woods structure.
The present invention provides the preparation method of the MEMS infrared light supply of a kind of suspension structure, including:
Clean double throwing 100 monocrystalline silicon piece substrates are provided, grow supporting layer in described monocrystalline substrate front, then instead
Etching mask layer is grown on the thin layer of face；
Semi-conducting material zone of heating after utilizing LPCVD/PECVD equipment to adulterate successively on described supporting layer, sealing coat
And radiating layer；
To described zone of heating, sealing coat, radiating layer through Twi-lithography, figure dissolves zone of heating sensitizing range and radiating layer is quick
Sensillary area；
On growth supporting layer, zone of heating, sealing coat, radiating layer thin layer, MEMS technology figure is utilized to dissolve metal electricity
Pole pattern；
Utilize reactive ion etching or plasma immersion ion injection device etching top layer polycrystalline silicon material radiating layer, logical
Overregulate control etch period and obtain the nanoforest structure of different-shape and depth-width ratio, utilize vapour deposition or electric plating method
Summoning thin film is constituted at described nanoforest superstructure deposition metal level；
Prepare suspension structure.
Optionally, described on growth supporting layer, zone of heating, sealing coat, radiating layer thin layer, utilize MEMS technology figure
Dissolve metal electrode pattern to include:
Utilize magnetron sputtering or evaporation layer of metal electrode or complex metal layer electrode；
Wet etching equipment patterned electrodes pattern is utilized at described metal electrode layer.
Optionally, described suspension structure of preparing includes:
Four isolation moat structures of concave arc shape Film patterning to described supporting layer；
Described monocrystalline substrate backside mask is graphically carried on the back chamber release window；
Utilize wet etching that back of the body chamber is carried out wet method release to stop at described supporting layer thin film 50um～100um,
Then XeF2 dry release is utilized to go out suspension structure.
MEMS infrared light supply of suspension structure that the present invention provides and preparation method thereof, it is provided that the four of a kind of new concave arc shape
The structure of the clamped suspension of beam, it is possible to heat conduction loss is greatly decreased, improves the radiation efficiency of light source；Have employed wet etching and do
The process of method etching mixing release, first carries out back wet etching release, then carries out dry method XeF2 release process, it is possible to
Improve processing compatibility, it is to avoid it is the completeest to the release that back is silica-based that the common process later stage carries out deep reaction ion etching (DRIE)
Entirely, the drawback that also wet method cavity in back is excessive, add the stability that back of the body chamber discharges completely simultaneously, reduce technology difficulty.
Accompanying drawing explanation
For the technical scheme being illustrated more clearly that in the embodiment of the present invention, in embodiment being described below required for make
Accompanying drawing be briefly described, it should be apparent that, below describe in accompanying drawing be only some embodiments of the present invention, for
From the point of view of those of ordinary skill in the art, on the premise of not paying creative work, it is also possible to obtain other according to these accompanying drawings
Accompanying drawing.
Fig. 1 is carrying substrate face thermal oxide silicon oxide, the sectional view of the most two-sided lpcvd silicon nitride thin film；
Fig. 2 is at front LPCVD two-layer polysilicon, respectively as zone of heating and radiating layer, the silicon oxide conduct of middle PE CVD
Sealing coat, and the sectional view of resistance value is changed at zone of heating polycrystalline silicon material heavy doping B；
Fig. 3 is two-layer polysilicon layer pattern, forms radiating layer and the sectional view of zone of heating；
Fig. 4 is graphical silicon nitride support layer, forms isolation channel and the sectional view of front gas phase HF etching window；
Fig. 5 is graphical silicon nitride support layer, forms the top view of isolation channel；
Fig. 6 is the graphical of back side silicon nitride silicon mask, forms the sectional view of back of the body chamber liberation port；
Fig. 7 is the graphical of back side silicon nitride silicon mask, forms the upward view of back of the body chamber liberation port；
Fig. 8 is the sectional view that graphical Al electrode and RIE radiating layer polysilicon form nano silicon material；
Fig. 9 is magnetron sputtering Al, the electrode patterning and top view of RIE polysilicon radiating layer；
Figure 10 is the sectional view of TMAH wet etching back of the body chamber liberation port；
Figure 11 is XeF2The sectional view of dry release back of the body chamber liberation port；
Figure 12 is the sectional view that the break-through of silicon oxide supporting layer is etched by front gas phase HF；
Figure 13 is that the preparation of suspension structure completes, the top view completed of final infrared light supply device.
In figure:
1: carrying substrate；2: silicon oxide supporting layer；3: silicon nitride support layer；
4: polysilicon zone of heating；5: silicon oxide sealing coat；6: polysilicon radiating layer；
7: silicon nitride mask layer；8: nano-silicon radiating layer；
101: irradiation structure；102: zone of heating structure；103: isolation moat structure；
104: back of the body chamber liberation port structure；105: metal electrode structure；106: back of the body chamber wet method release structure；
107: dry release structure；108: break-through etching structure.
Detailed description of the invention
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is carried out clear, complete
Describe, it is clear that described embodiment is only a part of embodiment of the present invention rather than whole embodiments wholely.Based on
Embodiment in the present invention, those of ordinary skill in the art obtained under not making creative work premise all other
Embodiment, broadly falls into the scope of protection of the invention.
The embodiment of the present invention provides the MEMS infrared light supply of a kind of suspension structure, as shown in Figure 12 and Figure 13, described suspension
The MEMS infrared light supply of structure includes the most successively: silicon nitride mask layer 7, carrying substrate 1, silicon oxide supporting layer 2,
Silicon nitride support layer 3, polysilicon zone of heating 4, silicon oxide sealing coat 5, polysilicon radiating layer 6；The MEMS of described suspension structure is red
Outer light source also includes patterned metal electrode structure 105, isolation moat structure 103, dry release structure 107 and break-through etching structure
108。
Wherein, described polysilicon radiating layer 6 uses reactive ion etching (RIE) etches polycrystalline silicon, forms forest nano-silicon
Radiating layer 8, for infrared radiation, and is covered on polysilicon zone of heating 4 by silicon oxide sealing coat 5；Polysilicon heats
Layer 4 is located on silicon oxide supporting layer 2 and silicon nitride support layer 3, for providing energy to polysilicon radiating layer 6；Described oxidation
Silicon supporting layer 2 and silicon nitride support layer 3, polysilicon zone of heating 4, silicon oxide sealing coat 5, polysilicon radiating layer 6 are all suspended in and hold
Carry above substrate 1 and form the four clamped suspension structures of beam.
Described carrying substrate is silicon-based substrate, and described silicon-based substrate can use silicon quadra substrate, available microelectronics
Body silicon processing technique prepares the quadra structure of hollow on silicon chip.
Described supporting layer is silicon oxide, silicon nitride or silicon oxide and silicon nitride multilayer complex films supporting layer, supporting layer with
Four isolation moat structures of concave arc shape are made in silicon substrate contact and centre；Described sealing coat uses silicon oxide or silicon nitride
Sealing coat, zone of heating is electrically insulated by this sealing coat with radiating layer.
Described zone of heating uses semi-conducting material zone of heating, uses method deposition layer of semiconductor physically or chemically thin
Film, and semi-conducting material is doped makes it have resistance heat characteristic；Zone of heating can use rectangle zone of heating, and is deposited on
On supporting layer；Described metal electrode can use single-layer metal electrode, such as copper, platinum, aluminum, titanium, tungsten, it would however also be possible to employ complex metal layer
Electrode, electrode under-layer can use titanium or chromium metal as adhesion layer, and redeposited metal on adhesion layer, such as gold, platinum, aluminum.
Wherein, described metal electrode layer gross thickness be the thickness of 0.8 μm～1.2 μm or connection electrode layer be 200～
400nm, the thickness of electrode layer is 600～800nm；Described semi-conducting material zone of heating thickness is 500nm～600nm.
The gross thickness of described supporting layer thin film is 0.6 μm～1 μm, and described separation layer thickness is 30nm～50nm.
The thickness of described monocrystal silicon carrying substrate is 500 μm.
The MEMS infrared light supply of suspension structure that the embodiment of the present invention provides has a following construction features:
Described supporting layer structure uses silicon oxide and silicon nitride two film construction to reduce the internal stress of thin film.First in cleaning
Double throw thermal oxide one layer of SiO in front on (100) silicon chips2, then deposit one two-sided use low-pressure chemical vapor deposition (LPCVD)
Layer Si3N4.The two film construction in front is as the supporting layer of whole suspension structure, the mask knot as subsequent wet release at the back side
Structure.Described zone of heating structure, use doping B after polysilicon as heating electric resistance structure, and by control doping content
With the resistance that dosage controls polysilicon；
Described radiating layer uses etches polycrystalline silicon materials to prepare.Grow between doped polysilicon layer and etches polycrystalline silicon layer
One layer of thin silicon oxide layer, plays the effect of isolation.Described electrode structure, uses the method for magnetron sputtering to prepare, uses pure
Metallic target as bombardment material, the crystal grain diameter of preparation is in 50 nanometers, and the thickness of film layer is in 800 nanometers.Afterwards in surface light
Carve, use the method for wet etching to carry out the graphical of electrode；
Described release structure uses the release process method of the mixing of innovation.After preparation completes Facad structure, at back
Under the effect of mask, carrying out wet etching release to back is silica-based, being discharged into, distance front self-stopping technology supporting layer 50～100 is micro-
The local of rice stops corrosion；Then XeF is used2Carry out dry etching to silica-based, form the structure of whole device release；
Described suspension structure uses the Novel suspending structure that concave arc shape four beam is clamped, and zone of heating, electricity isolated layer, radiating layer are all
Only be connected with silica-based by four concave arc shape cantilever beams, utilize arc form suspending film structure solve suspension closed film type with
The problem that cantilever film type infrared light supply thermal stress is big and structure is easily rupturable, and it is effectively improved radiation efficiency.Make this infrared
Light source has that volume is little, low in energy consumption, it is fast, modulated to respond and reliability high.
Described suspension structure uses the release process method of the mixing of innovation.After preparation completes Facad structure, at back
Under the effect of silicon nitride mask layer 7, carry out wet etching release 106 to back is silica-based, be discharged into distance front side supports layer
SiO2The local stopping of 50～100 microns is corroded；It is continuing with XeF2Carry out dry etching to silica-based, etch into front SiO2
Self-stopping technology during layer, forms the release structure 107 that the back side is silica-based；Then use gas phase HF to SiO in front2Layer carries out break-through etching
108, form the structure of whole device release.
The embodiment of the present invention provides the preparation method of the MEMS infrared light supply of a kind of suspension structure, comprises the steps:
Step S11, by p-type (100) double throwing silicon chip according to standard cleaning process；
Step S12 is as it is shown in figure 1, with cleaned silicon wafer to manufacture supporting layer: thermal oxide one layer on silicon chip
500nm～700nm thin layer of silicon oxide, then at mono-layer of silicon nitride of two-sided LPCVD again, its thickness, at 150nm～200nm, is formed
One layer of compound membrane structure；
Step S13 as in figure 2 it is shown, the most and then mono-layer of 600nm～800nm of front LPCVD many
Crystal silicon, then uses the method for diffusion to adulterate, and forms n-type doping, improves the electric conductivity of polysilicon.Many after doping the most again
Crystal silicon surface makes one layer of 50nm～100nm silicon oxide and isolates, and mono-layer of 500nm～800nm polysilicon of last LPCVD is used for
The preparation of nano silicon material；
Step S14 as it is shown on figure 3, in the structure shown in Fig. 2 Twi-lithography, be radiating layer 101 and zone of heating respectively
102 graphical, step is in electrical contact for zone of heating and electrode；
Step S15, as shown in Figure 4, continues photoetching in the structure shown in Fig. 3, graphical silicon nitride support layer formed every
From groove, for the release window of final front gas phase HF break-through etching, top view is shown in Fig. 5；
Step S16, as shown in Figure 6, on the basis of the Facad structure shown in Fig. 5, carries out carrying on the back the figure of chamber silicon nitride mask
Shape, for subsequent wet corrosion release, upward view is shown in Fig. 7；
Step S17, as shown in Figure 8, magnetron sputtering Pt electrode on the Facad structure shown in Fig. 6, and patterned electrodes, electricity
Pole shape is shown in Fig. 9；And then it is continuing with reactive ion etching (RIE) etching top layer polysilicon radiating layer in front, uses Cl2
And SF6Gas etching, He is used for cooling down, and forms the nano silicon material of forest structure, and radiance is close to black matrix；
Step S18, as shown in Figure 10～13, on the basis of the Facad structure shown in Fig. 8, first carry out carry on the back chamber release window
Wet etching, due to the anisotropy of monocrystal silicon, corrosion mouth presents 54.47 °, as shown in Figure 10；Eroding to distance oxidation
At silicon layer 50～70 microns, it is continuing with dry method XeF2 etching, etches into and stop, as shown in figure 11 at silicon oxide；Last just
Face uses gas phase HF to carry out break-through etching at isolation channel liberation port, and as shown in figure 12, final release structure completes, such as Figure 13 institute
Show.
So far, prepared by the MEMS infrared light supply of suspension structure.
The embodiment of the present invention provides the preparation method of the MEMS infrared light supply of another suspension structure, including walking as follows
Rapid:
Step S21, by p-type (100) double throwing silicon chip according to standard cleaning process；
Step S22, with cleaned silicon wafer to manufacture supporting layer: one layer of 500nm～700nm oxygen of thermal oxide on silicon chip
SiClx thin layer, then at mono-layer of silicon nitride of two-sided LPCVD again, its thickness at 150nm～200nm, formed one layer compound thin
Membrane structure；
Step S23, and then mono-layer of 600nm polysilicon of front LPCVD, then use the method for diffusion to adulterate, and forms N-type
Doping, improves the electric conductivity of polysilicon.Polysilicon surface one layer of 50nm～100nm silicon oxide of making after doping enters the most again
Row isolation, mono-layer of 500nm～800nm polysilicon of last LPCVD is for the preparation of nano silicon material；
Step S24, on said structure Twi-lithography, be the graphical of radiating layer 101 and zone of heating 102 respectively, step
In electrical contact for zone of heating and electrode；
Step S25, continuation photoetching on said structure, graphical silicon nitride and silicon oxide supporting layer formation isolation channel, use
In front dry release window；
Step S26, on the basis of above-mentioned Facad structure, carry out carrying on the back the graphical, for follow-up wet of chamber silicon nitride mask
Method corrosion release；
Step S27, on Facad structure magnetron sputtering Pt electrode, and patterned electrodes；And then it is continuing with in front
Reactive ion etching (RIE) etching top layer polysilicon radiating layer, uses Cl2And SF6Gas etching, He is used for cooling down, and is formed gloomy
The nano silicon material of woods structure, radiance is close to black matrix；
Step S28, on the basis of above-mentioned Facad structure, first carry out carry on the back chamber release window wet etching, due to monocrystalline
The anisotropy of silicon, corrosion mouth presents 54.47 °；Eroding at silicon oxide layer 50～70 microns, using XeF in front2
Carrying out break-through etching by isolation channel release window, final release structure completes.
So far, prepared by the MEMS infrared light supply of suspension structure.
MEMS infrared light supply of suspension structure that the embodiment of the present invention provides and preparation method thereof, it is provided that a kind of new concave arc
The structure of the four clamped suspensions of beam of shape, it is possible to heat conduction loss is greatly decreased, improves the radiation efficiency of light source；Have employed wet method rotten
Erosion and the process of dry etching mixing release, first carry out back wet etching release, then carries out dry method XeF2 release work
Skill, it is possible to increase processing compatibility, it is to avoid it is silica-based to back that the common process later stage carries out deep reaction ion etching (DRIE)
Release is incomplete, the drawback that also wet method cavity in back is excessive, adds the stability that back of the body chamber discharges completely simultaneously, reduces work
Skill difficulty.
The above, the only detailed description of the invention of the present invention, but protection scope of the present invention is not limited thereto, and any
Those familiar with the art in the technical scope that the invention discloses, the change that can readily occur in or replacement, all answer
Contain within protection scope of the present invention.Therefore, protection scope of the present invention should be as the criterion with scope of the claims.
Claims (9)
1. the MEMS infrared light supply of a suspension structure, it is characterised in that include on membrane suspension structure and described suspension structure
Infrared light supply structure；Described membrane suspension structure is patterned supporting layer, and described supporting layer is for being deposited on carrying substrate
Four beam fixed support structures of concave arc shape；Described infrared light supply structure includes: zone of heating, sealing coat, patterned metal electrode and
Radiating layer；Described zone of heating is deposited on above described supporting layer, and described patterned metal electrode deposition is on described supporting layer
And it is connected with described zone of heating side；Described sealing coat is prepared on described zone of heating；Described radiating layer is prepared described
Sealing coat upper surface；Described radiating layer, sealing coat, zone of heating and supporting layer are all suspended on the carrying substrate of back cavity formation
Described membrane suspension structure.
The MEMS infrared light supply of suspension structure the most according to claim 1, it is characterised in that described supporting layer is oxidation
Silicon, silicon nitride or silicon oxide and silicon nitride multilayer complex films supporting layer, described supporting layer and carrying substrate contact and centre
Four isolation moat structures for concave arc shape.Described carrying substrate is the silicon-based substrate of silicon quadra.
The MEMS infrared light supply of suspension structure the most according to claim 1, it is characterised in that described sealing coat is silicon oxide
Sealing coat or nitride spacer, electrically insulate described zone of heating with described radiating layer.
The MEMS infrared light supply of suspension structure the most according to claim 1, it is characterised in that described zone of heating is quasiconductor
Material rectangular zone of heating, is deposited on described supporting layer.
The MEMS infrared light supply of suspension structure the most according to claim 1, it is characterised in that described metal electrode is monolayer
Metal electrode, or complex metal layer electrode, electrode under-layer uses titanium or chromium metal as adhesion layer, and on adhesion layer, deposition has
Gold, platinum or aluminum metal.
The MEMS infrared light supply of suspension structure the most according to claim 1, it is characterised in that described radiating layer uses reaction
Ion etching etches polycrystalline silicon, forms the nano silicon material of the taper forest structure of the most upright arrangement.
7. the preparation method of the MEMS infrared light supply of a suspension structure, it is characterised in that including:
Clean double throwing 100 monocrystalline silicon piece substrates are provided, grow supporting layer in described monocrystalline substrate front, then thin at reverse side
Etching mask layer is grown on film layer；
Semi-conducting material zone of heating, sealing coat and spoke after utilizing LPCVD/PECVD equipment to adulterate successively on described supporting layer
Penetrate layer；
To described zone of heating, sealing coat, radiating layer through Twi-lithography, figure dissolves zone of heating sensitizing range and radiating layer is sensitive
District；
On growth supporting layer, zone of heating, sealing coat, radiating layer thin layer, MEMS technology figure is utilized to dissolve metal electrode figure
Case；
Utilize reactive ion etching or plasma immersion ion injection device etching top layer polycrystalline silicon material radiating layer, by adjusting
Joint controls etch period and obtains the nanoforest structure of different-shape and depth-width ratio, utilizes vapour deposition or electric plating method in institute
State nanoforest superstructure deposition metal level and constitute Summoning thin film；
Prepare suspension structure.
Method the most according to claim 7, it is characterised in that described in growth supporting layer, zone of heating, sealing coat, radiation
On layer film layer, utilize MEMS technology figure to dissolve metal electrode pattern and include:
Utilize magnetron sputtering or evaporation layer of metal electrode or complex metal layer electrode；
Wet etching equipment patterned electrodes pattern is utilized at described metal electrode layer.
Method the most according to claim 7, it is characterised in that described suspension structure of preparing includes:
Four isolation moat structures of concave arc shape Film patterning to described supporting layer；
Described monocrystalline substrate backside mask is graphically carried on the back chamber release window；
Utilize wet etching that back of the body chamber is carried out wet method release to stop at described supporting layer thin film 50um～100um, then
XeF2 dry release is utilized to go out suspension structure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610797210.7A CN106276773B (en) | 2016-08-31 | 2016-08-31 | MEMS infrared light supplies of suspension structure and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610797210.7A CN106276773B (en) | 2016-08-31 | 2016-08-31 | MEMS infrared light supplies of suspension structure and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106276773A true CN106276773A (en) | 2017-01-04 |
| CN106276773B CN106276773B (en) | 2018-06-29 |
Family
ID=57709445
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610797210.7A Active CN106276773B (en) | 2016-08-31 | 2016-08-31 | MEMS infrared light supplies of suspension structure and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106276773B (en) |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106698331A (en) * | 2017-01-17 | 2017-05-24 | 中国科学院上海微系统与信息技术研究所 | monocrystalline silicon infrared thermopile structure with beam film structure and production method thereof |
| CN110143567A (en) * | 2019-05-17 | 2019-08-20 | 中国科学院上海微系统与信息技术研究所 | A kind of hanging black dielectric film and preparation method thereof and application |
| CN110289337A (en) * | 2019-06-25 | 2019-09-27 | 信利半导体有限公司 | A kind of lithographic method of photovoltaic cell |
| CN110520392A (en) * | 2017-03-09 | 2019-11-29 | 康宁股份有限公司 | The method for manufacturing the metallic film supported by glass support part |
| CN111106205A (en) * | 2019-11-29 | 2020-05-05 | 中国科学院微电子研究所 | Silicon-based photonic devices and methods of fabricating the same |
| CN113120847A (en) * | 2019-12-31 | 2021-07-16 | 无锡微奥科技有限公司 | Method for manufacturing MEMS driving arm by using SOI wafer |
| CN113336184A (en) * | 2021-06-04 | 2021-09-03 | 微集电科技(苏州)有限公司 | MEMS infrared light source with closed membrane structure and preparation method thereof |
| CN114604818A (en) * | 2022-05-11 | 2022-06-10 | 山东大学 | MEMS infrared light source based on porous silicon and preparation method thereof |
| CN114890373A (en) * | 2022-05-11 | 2022-08-12 | 山东大学 | Self-supporting MEMS infrared light source and preparation method thereof |
| CN115818556A (en) * | 2022-10-25 | 2023-03-21 | 微集电科技(苏州)有限公司 | MEMS infrared light source with improved photoelectric conversion efficiency |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1342887A (en) * | 2001-10-22 | 2002-04-03 | 中国科学院上海冶金研究所 | Structure self-aligning method for making infrared absorption layer of infrared snesor for micromechanical heat stack |
| CN1743959A (en) * | 2004-09-01 | 2006-03-08 | 中国科学院电子学研究所 | Infrared light supply and preparation method based on micro-electronic mechanical system technique |
| CN101665231A (en) * | 2009-09-18 | 2010-03-10 | 上海芯敏微系统技术有限公司 | Structure of thin film device manufactured by means of double-faced opposite-penetrated corrosion based on (100) silicon chip and method thereof |
| CN104291263A (en) * | 2014-08-25 | 2015-01-21 | 厦门脉科优芯电子科技有限公司 | Micro infrared light source chip of diamond bridge film structure and manufacturing method |
| CN104555903A (en) * | 2015-01-21 | 2015-04-29 | 江苏物联网研究发展中心 | Preparation method of black metal material based on self-alignment plasma etching process |
| JP2015173028A (en) * | 2014-03-11 | 2015-10-01 | パナソニックＩｐマネジメント株式会社 | infrared radiation element |
| CN206014405U (en) * | 2016-08-31 | 2017-03-15 | 中国科学院微电子研究所 | The MEMS infrared light supplies of suspension structure |
-
2016
- 2016-08-31 CN CN201610797210.7A patent/CN106276773B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1342887A (en) * | 2001-10-22 | 2002-04-03 | 中国科学院上海冶金研究所 | Structure self-aligning method for making infrared absorption layer of infrared snesor for micromechanical heat stack |
| CN1743959A (en) * | 2004-09-01 | 2006-03-08 | 中国科学院电子学研究所 | Infrared light supply and preparation method based on micro-electronic mechanical system technique |
| CN101665231A (en) * | 2009-09-18 | 2010-03-10 | 上海芯敏微系统技术有限公司 | Structure of thin film device manufactured by means of double-faced opposite-penetrated corrosion based on (100) silicon chip and method thereof |
| JP2015173028A (en) * | 2014-03-11 | 2015-10-01 | パナソニックＩｐマネジメント株式会社 | infrared radiation element |
| CN104291263A (en) * | 2014-08-25 | 2015-01-21 | 厦门脉科优芯电子科技有限公司 | Micro infrared light source chip of diamond bridge film structure and manufacturing method |
| CN104555903A (en) * | 2015-01-21 | 2015-04-29 | 江苏物联网研究发展中心 | Preparation method of black metal material based on self-alignment plasma etching process |
| CN206014405U (en) * | 2016-08-31 | 2017-03-15 | 中国科学院微电子研究所 | The MEMS infrared light supplies of suspension structure |
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106698331B (en) * | 2017-01-17 | 2018-11-02 | 中国科学院上海微系统与信息技术研究所 | A kind of infrared thermal reactor structure of the monocrystalline silicon comprising beam diaphragm structure and preparation method thereof |
| CN106698331A (en) * | 2017-01-17 | 2017-05-24 | 中国科学院上海微系统与信息技术研究所 | monocrystalline silicon infrared thermopile structure with beam film structure and production method thereof |
| CN110520392B (en) * | 2017-03-09 | 2023-04-04 | 康宁股份有限公司 | Method for producing a metal film supported by a glass support |
| CN110520392A (en) * | 2017-03-09 | 2019-11-29 | 康宁股份有限公司 | The method for manufacturing the metallic film supported by glass support part |
| CN110143567A (en) * | 2019-05-17 | 2019-08-20 | 中国科学院上海微系统与信息技术研究所 | A kind of hanging black dielectric film and preparation method thereof and application |
| CN110289337A (en) * | 2019-06-25 | 2019-09-27 | 信利半导体有限公司 | A kind of lithographic method of photovoltaic cell |
| CN111106205A (en) * | 2019-11-29 | 2020-05-05 | 中国科学院微电子研究所 | Silicon-based photonic devices and methods of fabricating the same |
| CN113120847A (en) * | 2019-12-31 | 2021-07-16 | 无锡微奥科技有限公司 | Method for manufacturing MEMS driving arm by using SOI wafer |
| CN113336184A (en) * | 2021-06-04 | 2021-09-03 | 微集电科技(苏州)有限公司 | MEMS infrared light source with closed membrane structure and preparation method thereof |
| CN113336184B (en) * | 2021-06-04 | 2023-12-19 | 微集电科技(苏州)有限公司 | MEMS infrared light source with closed membrane structure and preparation method thereof |
| CN114604818A (en) * | 2022-05-11 | 2022-06-10 | 山东大学 | MEMS infrared light source based on porous silicon and preparation method thereof |
| CN114890373A (en) * | 2022-05-11 | 2022-08-12 | 山东大学 | Self-supporting MEMS infrared light source and preparation method thereof |
| CN115818556A (en) * | 2022-10-25 | 2023-03-21 | 微集电科技(苏州)有限公司 | MEMS infrared light source with improved photoelectric conversion efficiency |
Also Published As
| Publication number | Publication date |
|---|---|
| CN106276773B (en) | 2018-06-29 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN106276773B (en) | MEMS infrared light supplies of suspension structure and preparation method thereof | |
| US9117949B2 (en) | Structure and fabrication method of a high performance MEMS thermopile IR detector | |
| US9222837B2 (en) | Black silicon-based high-performance MEMS thermopile IR detector and fabrication method | |
| CN106352989A (en) | Method for manufacturing microbridge of uncooled infrared focal plane detector and structure thereof | |
| CN206014405U (en) | The MEMS infrared light supplies of suspension structure | |
| CN101665231B (en) | Structure of thin film device manufactured by means of double-faced opposite-penetrated corrosion based on (100) silicon chip and method thereof | |
| CN103163115B (en) | The multi-layer variable micro structure of induction substance | |
| CN103207021B (en) | High-performance micro-electromechanical system (MEMS) thermopile infrared detector structure and manufacturing method thereof | |
| CN106124066B (en) | A kind of microbolometer and preparation method of high fill factor | |
| CN106374019A (en) | MEMS (Micro Electro Mechanical System) infrared light source integrated with nanometer structure and fabrication method of MEMS infrared light source | |
| CN108565301A (en) | Photodetector and preparation method based on metal surface plasma induction two waveband response | |
| CN109659387A (en) | Infrared detector based on the enhancing of hydridization type plasma resonance | |
| EP3522217B1 (en) | Method to prepare pixel for uncooled infrared focal plane detector | |
| CN103702930B (en) | For the method and apparatus that photon energy is converted to electric energy | |
| US10914700B2 (en) | Single cantilever gas sensor, sensor array, and manufacturing method thereof | |
| CN104291263B (en) | Micro infrared light source chip of diamond bridge film structure and manufacturing method | |
| WO2016066106A1 (en) | All-silicon mems methane sensor, fuel gas detection application, and manufacturing method | |
| CN110329984A (en) | A kind of method and device preparing solid nano hole based on dry etching | |
| US11440793B2 (en) | Hydrogen sensor on medium or low temperature solid micro heating platform | |
| US20140290338A1 (en) | Hydrogen gas sensor and method for manufacturing the same | |
| CN106185784B (en) | MEMS infrared light supplies based on wet method pre-release structure and preparation method thereof | |
| CN105576070B (en) | Cavity forming method, thermopile IR detector and preparation method thereof | |
| CN111115565B (en) | Preparation method and application of MEMS infrared light source | |
| CN102194915B (en) | Self-assembly nano TiO2 film ultraviolet detector and preparation method thereof | |
| Mao et al. | Fabrication of nanopillar forests with high infrared absorptance based on rough poly-Si and spacer technology |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20201217 Address after: 510000 601, building a, 136 Kaiyuan Avenue, Huangpu District, Guangzhou City, Guangdong Province Patentee after: AoXin integrated circuit technology (Guangdong) Co.,Ltd. Address before: 100029 Beijing city Chaoyang District Beitucheng West Road No. 3 Patentee before: Institute of Microelectronics, Chinese Academy of Sciences |
|
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20220425 Address after: 510000 room 710, Jianshe building, No. 348, Kaifa Avenue, Huangpu District, Guangzhou, Guangdong Patentee after: Ruili flat core Microelectronics (Guangzhou) Co.,Ltd. Address before: 510000 601, building a, 136 Kaiyuan Avenue, Huangpu District, Guangzhou City, Guangdong Province Patentee before: AoXin integrated circuit technology (Guangdong) Co.,Ltd. |
|
| TR01 | Transfer of patent right |