CN106255244A - A kind of thin film heater improving temperature field uniformity - Google Patents
A kind of thin film heater improving temperature field uniformity Download PDFInfo
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- CN106255244A CN106255244A CN201610679943.0A CN201610679943A CN106255244A CN 106255244 A CN106255244 A CN 106255244A CN 201610679943 A CN201610679943 A CN 201610679943A CN 106255244 A CN106255244 A CN 106255244A
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- thin film
- heater
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- temperature
- temperature field
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/40—Heating elements having the shape of rods or tubes
- H05B3/54—Heating elements having the shape of rods or tubes flexible
- H05B3/56—Heating cables
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Abstract
The present invention relates to technical field of temperature control, disclose a kind of thin film heater improving temperature field uniformity, comprise a substrate and a deposition film heating line on the substrate, film heating line is coiled on substrate with double-helical form, the live width of film heating line is constant, and spacing is successively decreased to edge successively from center.The present invention is by changing the spacing between heater wire electrode, and then reduce the heating power in centre and the method that increases the power of marginal portion accordingly, to make up the central area heat radiation heat transfer difference of peripheral region rapid heat dissipation slowly, and then achieve the technique effect that can improve heter temperature uniformity.
Description
Technical field
The present invention relates to technical field of temperature control, be specifically related to a kind of thin film heater improving temperature field uniformity.
Background technology
Temperature controls to have a wide range of applications demand in all trades and professions.One typical temperature control system mainly includes two
Point, a part is heater or refrigerator, and another part is temperature control instrument or temperature control circuit.Along with the miniaturization of electronic device,
Occur in that the heater of the miniaturization more and more utilizing thin film or thick film technology to prepare.
These thickness/thin film heaters are when specifically applying, and its temperature field uniformity is required for meeting requirement to a certain degree.Example
As just required the temperature in whole chromatograph groove uniform as far as possible in miniature chromatograph, if different positions exists bigger temperature
Difference, will cause the serious broadening of chromatographic peak to be substantially reduced the separating property of chromatographic column.
The factor of impact temperature field uniformity mainly has following 2 points:
1) heat conductivity of baseplate material
Thickness/thin film heater is all by laying heater wire on baseplate material, after heater wire heating power, then by heat
It is delivered on the baseplate material of surrounding.Therefore, temperature homogeneity is had a major impact by the heat conductivity of baseplate material, commercialization
Flexible, thin film heater use the polyimides polymer such as (PI) to make substrate, the low heat conductivity of polymer inevitably leads to
The temperature homogeneity of this kind of heater is poor.And silicon has good heat conductivity, the most existing miniature chromatograph many employings silicon conduct
Substrate.
2) geometric layout of lines is heated
Existing thickness/thin film heater is the most all deposited in a flat substrate, uses photoetching or screen printing
Brush technology forms heating lines.The shape of heating lines mainly has: (1) is snakelike, sees document 1. Design and
fabrication of micro hydrogen gas sensors using palladium thin film.Mater
Chem Phys,2012,133:987;2. the space design of thin-film electro heater and thermal uniformity test, Spacecraft Environment Engineering,
2013,30:417;3. JP 2004-79492 etc..(2) annular, sees document 4. JP 2005-183272;5. JP
2000-150119 etc..(3) shape of any serpentine windings, sees document 6. JP 2009-176502.For realizing uniformly heating,
Current technology means are to be laid in equably by heater strip on whole pre-warmed area mostly.But above-mentioned being designed without is filled
Divide the boundary condition considering conduction of heat, i.e. heater center position heat radiation is slow, and edge rapid heat dissipation.Therefore, uniformly lay
It is high that the method for heater strip inevitably leads to heater center spot temperature, and edge temperature is low, as list of references
The most 2. test result.Such as document 1. in, the material system of heating is 2 μm silicon nitrides/30nm tantalum pentoxide/300nm
Platinum/500nm silicon oxide composite multilayer membrane, wherein platinum heating film be shaped as rule snakelike, when central temperature is heated to 154 DEG C
Time, the temperature at secondary edge only has about 140 DEG C, and the relative error of temperature is up to 10%.
Therefore, in prior art, when using thin film heater that substrate is heated, there is heating-up temperature uneven
Technical problem.
Summary of the invention
It is desirable to provide a kind of thin film heater improving temperature field uniformity, solve heater in prior art and deposit
The technical problem of non-uniform temperature, and then achieve the technique effect that can improve temperature field uniformity.
The technical scheme is that a kind of thin film heater improving temperature field uniformity, comprise a substrate and be deposited on
A film heating line on described substrate, described film heating line is coiled on substrate with double-helical form, described thin film
The live width of heater wire is constant, and spacing is successively decreased to edge successively from center.
Further, the mode that described film heating distance between centers of tracks successively decreases is linear decrease or non-linear successively decreases.
Further, described double-helical form is square Double helix or circular Double helix.
Further, the material of described film heating line includes platinum, gold, copper, tungsten elemental metals and alloy thereof, and nickel chromium triangle
Alloy, DOPOS doped polycrystalline silicon.
Further, described substrate is flat thin lamellar, and the material of described substrate includes semiconductor chip, sheet glass, pottery
Ceramics, piezoid, the sheet metal of surface passivation, single-layer medium thin film, dielectric multi-layer optical thin film, multilayer dielectricity/metal composite thin film,
Flexible polymer film.
Use one or more technical scheme in the present invention, have the advantages that
Owing to considering the boundary condition of heater heat radiation, therefore heater no longer uses the scheme that constant power designs, and
It is the method by adjusting multi-turn heater wire spacing each other so that heater center area power is slightly smaller, and edge merit
Rate increases, thus effectively improves the uniformity of the Temperature Distribution of heater, at heating spool rest in the case of area is constant,
Obtain the area of bigger temperature consistency.
Accompanying drawing explanation
Fig. 1 is the electrode pattern of the equidistant heater of Double helix;
Fig. 2 is the two-dimension temperature scattergram of the equidistant heater of Double helix;
Fig. 3 is the section temperature scattergram of the equidistant heater of Double helix;
Fig. 4 is the electrode pattern that the Double helix of the present invention linearly becomes spacing heater;
Fig. 5 is the two-dimension temperature scattergram that the Double helix of the present invention linearly becomes spacing heater;
Fig. 6 is the section temperature scattergram that the Double helix of the present invention linearly becomes spacing heater;
Fig. 7 is the electrode pattern of the Double helix non-linear change spacing heater of the present invention;
Fig. 8 is the two-dimension temperature scattergram of the Double helix non-linear change spacing heater of the present invention;
Fig. 9 is the section temperature scattergram of the Double helix non-linear change spacing heater of the present invention;
Figure 10 is the electrode pattern of the circular Double helix non-linear change spacing heater of the present invention.
Wherein: 1 is film heating line, 2 is substrate, and S1, S2, S3, S4 are respectively between film heating line from inside to outside
Spacing, L is coverage.
Detailed description of the invention
In order to make the purpose of the present invention, technical scheme and advantage clearer, below in conjunction with accompanying drawing, the present invention is entered
Row further describes.
In order to solve the technical problem of the non-uniform temperature that heater exists in prior art, attached below in conjunction with description
Technical scheme is described in detail by figure and specific embodiment.
In existing technology, the spacing of heater wire is changeless, such as shown in Fig. 1, and the chi of silicon nitride film substrate
Very little for 5000um × 5000um × 1um, on it, deposition has platinum film heater, and thickness is 200nm, and the live width of heater wire is 200um;
Platinum film heater is that double-helix is coiled on silicon nitride board, totally 4 circle, and the spacing between two adjacent rings heater wire is from inside to outside
Be expressed as S1, S2, S3, S4, and all equal to 200um, the substrate area that such film heating line covers be 4mm ×
3.4mm.Based on Joule heat and the basic theories of the transfer mode of heat, carry out heating-up temperature emulation by COMSOL software.
In simulation process use heat transfer in Joule heat module, in diabatic process, emphasis consider conduction with to spreading
Heat (radiant heat is ignored), when applying fixed value voltage to heater wire one end, after balance heat transfer the two of silicon nitride film substrate
Dimension Temperature Distribution is as shown in Figure 2.Visible, the medium temperature of heater is higher, and environment temperature ratio is relatively low.This is due in heater
The heat radiation of heart position is slow, and the reason of edge rapid heat dissipation, illustrate that the scheme equidistantly laying heater wire does not accounts for heat radiation
Boundary condition, there is the bigger temperature difference with edge in the center that therefore inevitably leads to.And owing to connecting up and the most right
Claim, cause thermograde in the X-axis direction less than Y direction.It is to intercept from the two-dimension temperature scattergram of Fig. 2 shown in Fig. 3
Substrate center is along the temperature profile of X-axis, and when the maximum temperature of heater is 625 DEG C, it is at effective coverage, center 3000um
The temperature difference of interior generation is 22K.
Therefore, this patent by changing the spacing between heater wire electrode, and then reduce centre heating power and
The method of the corresponding power increasing marginal portion, to make up the central area heat radiation heat transfer difference of peripheral region rapid heat dissipation slowly.
Embodiment 1
In embodiments of the invention one, the spacing between heater wire is carried out from inside to outside linear decrease, use S1=
250um, S2=200um, S3=150um, S4=100um, as shown in Figure 4, the substrate area that film heating line covers slightly subtracts
Little, for 3.8mm × 3.2mm, and other parameters are completely the same with the situation of Fig. 1.When the maximum temperature of heater reaches 625 equally
Time about DEG C, the distribution of its two-dimension temperature is distributed the most as shown in figs. 5 and 6 along the section temperature of X-axis with substrate center.At center
The temperature difference produced in the 3000um of effective coverage is 15K, and the uniformity of temperature has had bigger improvement than equally spaced structure.But it is total
It is high that the warm field distribution of body remains center, and edge is low.
Embodiment 2
From the situation of embodiment 1, it is intended to improve further Temperature Distribution, needs to reduce further S4.But owing to using
The scheme that spaced linear successively decreases, implements the constraint being subject to bigger.Therefore in embodiments of the invention two, to spacing by
In carried out non-linear successively decreasing to outward.Use S1=300um, S2=250um, S3=200um, S4=100um, as shown in Figure 7.
The substrate area that film heating line covers slightly increases than equidistant scheme, and for 4.1mm × 3.5mm, and other parameters are with Fig. 1's
Situation is completely the same.When the maximum temperature of heater reaches about 625 DEG C equally, its two-dimension temperature is distributed as shown in Figure 8.Can
See that isothermal line that temperature is the highest is no longer confined in a little area at center, but the abnormity being scattered in center is big
Region and arround 4 zonules in so that the area of homogeneous temperature is significantly increased.Substrate center is along the section of X-axis
Temperature Distribution is as it is shown in figure 9, the temperature difference produced in the 3000um of effective coverage, center is 5.4K.As can be seen here, the present invention implements
Scheme is significantly improved compared to prior art temperature distribution evenness.
In order to contrast conveniently, the result that above three scheme emulates is summarized in table 1 below.
The temperature homogeneity contrast becoming line space design and existing equidistant design of table 1 present invention
Embodiment 3
In addition to square Double helix, it is possible to use circular Double helix, as shown in Figure 10.This Double helix heater wire totally 4
Circle, live width is 200um, and the spacing between heater wire is from inside to outside followed successively by S1=300um, S2=250um, S3=200um, S4
=100um.
Although preferred embodiments of the present invention have been described, but those skilled in the art once know basic creation
Property concept, then can make other change and amendment to these embodiments.So, claims are intended to be construed to include excellent
Select embodiment and fall into all changes and the amendment of the scope of the invention.
Certainly, the present invention also can have other various embodiments, in the case of without departing substantially from present invention spirit and essence thereof, ripe
Know those skilled in the art and can make various corresponding change and deformation according to the present invention, but these change and deformation accordingly
All should belong to the protection domain of appended claims of the invention.
Claims (5)
1. improve a thin film heater for temperature field uniformity, comprise a substrate and a deposition thin film on the substrate
Heater wire, it is characterised in that described film heating line is coiled on substrate with double-helical form, the line of described film heating line
Wide constant, spacing is successively decreased to edge successively from center.
The thin film heater improving temperature field uniformity the most according to claim 1, it is characterised in that described film heating line
The mode that spacing is successively decreased is linear decrease or non-linear successively decreases.
The thin film heater improving temperature field uniformity the most according to claim 1, it is characterised in that described double-helical shape
Formula is square Double helix or circular Double helix.
The thin film heater improving temperature field uniformity the most according to claim 1, it is characterised in that described film heating line
Material include platinum, gold, copper, tungsten elemental metals and alloy thereof, and nichrome, DOPOS doped polycrystalline silicon.
The thin film heater improving temperature field uniformity the most according to claim 1, it is characterised in that described substrate is flat board
Flake, the material of described substrate includes semiconductor chip, sheet glass, potsherd, piezoid, the sheet metal of surface passivation, list
Layer dielectric film, dielectric multi-layer optical thin film, multilayer dielectricity/metal composite thin film, flexible polymer film.
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Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107589155A (en) * | 2017-09-12 | 2018-01-16 | 华南师范大学 | A kind of capacitance type sensor and preparation method thereof |
CN109827674A (en) * | 2019-03-27 | 2019-05-31 | 电子科技大学 | A kind of flexibility temperature sensor of integrated high-accuracy and preparation method thereof |
CN110006549A (en) * | 2019-03-27 | 2019-07-12 | 电子科技大学 | A kind of flexible Temperature Humidity Sensor of integral structure and preparation method thereof |
CN110241403A (en) * | 2019-07-23 | 2019-09-17 | 芜湖通潮精密机械股份有限公司 | A kind of heater and preparation method thereof reducing the temperature difference and application |
CN110285891A (en) * | 2019-07-29 | 2019-09-27 | 丹东鸭绿江敏感元件有限公司 | Thermal resistance temperature-sensing element and its manufacturing method and equipment |
CN111045239A (en) * | 2019-12-24 | 2020-04-21 | 太原航空仪表有限公司 | Heating film of small-size side backlight liquid crystal display module |
CN111694181A (en) * | 2020-07-07 | 2020-09-22 | 中航华东光电有限公司 | Method for uniformly heating liquid crystal screen assembly at low temperature |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20020040901A1 (en) * | 2000-08-18 | 2002-04-11 | Keith Laken | Heated food service shelf for warming cookies and the like |
CN1767149A (en) * | 2004-10-28 | 2006-05-03 | 京瓷株式会社 | Heater, wafer heating apparatus and method for manufacturing heater |
JP2010073659A (en) * | 2008-09-22 | 2010-04-02 | Alps Electric Co Ltd | Heating element |
CN104010529A (en) * | 2011-09-28 | 2014-08-27 | 菲利普莫里斯生产公司 | Permeable electrical heat-resistant film for vaporisation of liquids from disposable mouthpieces comprising vaporisation membranes |
CN105594301A (en) * | 2013-08-22 | 2016-05-18 | Iee国际电子工程股份公司 | Foil heater e.g. for a heating panel |
-
2016
- 2016-08-17 CN CN201610679943.0A patent/CN106255244A/en active Pending
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20020040901A1 (en) * | 2000-08-18 | 2002-04-11 | Keith Laken | Heated food service shelf for warming cookies and the like |
CN1767149A (en) * | 2004-10-28 | 2006-05-03 | 京瓷株式会社 | Heater, wafer heating apparatus and method for manufacturing heater |
JP2010073659A (en) * | 2008-09-22 | 2010-04-02 | Alps Electric Co Ltd | Heating element |
CN104010529A (en) * | 2011-09-28 | 2014-08-27 | 菲利普莫里斯生产公司 | Permeable electrical heat-resistant film for vaporisation of liquids from disposable mouthpieces comprising vaporisation membranes |
CN105594301A (en) * | 2013-08-22 | 2016-05-18 | Iee国际电子工程股份公司 | Foil heater e.g. for a heating panel |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107589155A (en) * | 2017-09-12 | 2018-01-16 | 华南师范大学 | A kind of capacitance type sensor and preparation method thereof |
CN109827674A (en) * | 2019-03-27 | 2019-05-31 | 电子科技大学 | A kind of flexibility temperature sensor of integrated high-accuracy and preparation method thereof |
CN110006549A (en) * | 2019-03-27 | 2019-07-12 | 电子科技大学 | A kind of flexible Temperature Humidity Sensor of integral structure and preparation method thereof |
CN109827674B (en) * | 2019-03-27 | 2021-07-06 | 电子科技大学 | Integrated high-precision flexible temperature sensor and preparation method thereof |
CN110241403A (en) * | 2019-07-23 | 2019-09-17 | 芜湖通潮精密机械股份有限公司 | A kind of heater and preparation method thereof reducing the temperature difference and application |
CN110285891A (en) * | 2019-07-29 | 2019-09-27 | 丹东鸭绿江敏感元件有限公司 | Thermal resistance temperature-sensing element and its manufacturing method and equipment |
CN111045239A (en) * | 2019-12-24 | 2020-04-21 | 太原航空仪表有限公司 | Heating film of small-size side backlight liquid crystal display module |
CN111694181A (en) * | 2020-07-07 | 2020-09-22 | 中航华东光电有限公司 | Method for uniformly heating liquid crystal screen assembly at low temperature |
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Application publication date: 20161221 |