CN106159036A - A kind of preparation method of silicon based opto-electronics subsystem - Google Patents
A kind of preparation method of silicon based opto-electronics subsystem Download PDFInfo
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- CN106159036A CN106159036A CN201510170914.7A CN201510170914A CN106159036A CN 106159036 A CN106159036 A CN 106159036A CN 201510170914 A CN201510170914 A CN 201510170914A CN 106159036 A CN106159036 A CN 106159036A
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 28
- 239000010703 silicon Substances 0.000 title claims abstract description 28
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 28
- 230000005693 optoelectronics Effects 0.000 title claims abstract description 27
- 238000002360 preparation method Methods 0.000 title claims abstract description 21
- 238000000034 method Methods 0.000 claims abstract description 72
- 239000000835 fiber Substances 0.000 claims abstract description 57
- 238000000137 annealing Methods 0.000 claims abstract description 49
- 239000000758 substrate Substances 0.000 claims abstract description 35
- 229910052751 metal Inorganic materials 0.000 claims description 55
- 239000002184 metal Substances 0.000 claims description 55
- 238000005516 engineering process Methods 0.000 claims description 12
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 6
- 230000015572 biosynthetic process Effects 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 6
- 229910052732 germanium Inorganic materials 0.000 claims description 6
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 229910017052 cobalt Inorganic materials 0.000 claims description 3
- 239000010941 cobalt Substances 0.000 claims description 3
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 238000005468 ion implantation Methods 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 3
- 239000007769 metal material Substances 0.000 claims description 3
- 229910052750 molybdenum Inorganic materials 0.000 claims description 3
- 239000011733 molybdenum Substances 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 238000005224 laser annealing Methods 0.000 description 8
- 238000010438 heat treatment Methods 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1864—Annealing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Electromagnetism (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
Abstract
The embodiment of the invention discloses the preparation method of a kind of silicon based opto-electronics subsystem, it is characterised in that described silicon based opto-electronics subsystem includes the first substrate；Described method includes: form fiber waveguide subregion and manipulator subregion on the first area of described first substrate；The second area of described first substrate is formed detector subregion；First substrate with described fiber waveguide subregion, described manipulator subregion and described detector subregion is formed dielectric layer；At least corresponding to having described dielectric layer, fiber waveguide subregion and manipulator subregion described first area, or at least to there is described dielectric layer and second area corresponding to described detector subregion carries out microwave annealing process.
Description
Technical field
The present invention relates to Si-based optoelectronics, particularly relate to the preparation method of a kind of silicon based opto-electronics subsystem.
Background technology
The photoelectron technology of silicon materials, namely Si-based optoelectronics is to realize optical interconnection, optic communication future
Important development direction.Here, Si-based optoelectronics is mainly concerned with silicon based opto-electronics subsystem, described silica-based
Photonics mainly includes fiber waveguide, light source, manipulator and detector.For current technology, waveguide,
Manipulator and detector the most all can be compatible in si-substrate integrated circuit (IC, Integrated Circuit) front road work
In skill, and light source to need to utilize mount technology to carry out integrated.
In the integrated technique of described silicon based opto-electronics subsystem, owing to detector needs special epitaxy technique,
Typically the preparation of detector is placed on final tache, i.e. at final tache, detector is carried out the high temperature anneal；
But, it is serious that high-temperature annealing process makes the ion in the fiber waveguide prepared before and manipulator spread, and causes
Part of devices lost efficacy, and then affected global reliability and the stability of described silicon based opto-electronics subsystem.
In order to solve the ion diffusion problem of high annealing, prior art generally uses laser annealing techniques generation
For high-temperature annealing process, but, owing to laser annealing is local heating, it is time-consumingly significantly asking of laser annealing
Topic, time-consuming increase means the increase of preparation cost.It addition, laser annealing apparatus is annealed compared to other
The cost of equipment also exceeds a lot；Therefore, a kind of novel processing step is needed badly to solve the problems referred to above.
Summary of the invention
For solving the technical problem of existing existence, embodiments provide a kind of silicon based opto-electronics subsystem
Preparation method, it is possible to avoid the problem that ion spreads, promotes the global reliability of described silicon based opto-electronics subsystem
And stability.
The technical scheme of the embodiment of the present invention is achieved in that
The invention provides the preparation method of a kind of silicon based opto-electronics subsystem, described silicon based opto-electronics subsystem includes
First substrate；Described method includes:
The first area of described first substrate is formed fiber waveguide subregion and manipulator subregion；
The second area of described first substrate is formed detector subregion；
There is the of described fiber waveguide subregion, described manipulator subregion and described detector subregion
Dielectric layer is formed in one substrate；
At least to having described dielectric layer, fiber waveguide subregion and manipulator subregion corresponding described first
Region, or at least to there is described dielectric layer and second area corresponding to described detector subregion is carried out
Microwave annealing processes.
It is preferred that it is described at least to having described dielectric layer, fiber waveguide subregion and manipulator subregion pair
The described first area answered, or at least to there is described dielectric layer and described detector subregion is corresponding
Second area carries out microwave annealing process, including:
To the described first area that there is described dielectric layer, fiber waveguide subregion is corresponding with manipulator subregion,
And all carry out at microwave annealing having the described dielectric layer second area corresponding with described detector subregion
Reason.
In the first area of described first substrate, fiber waveguide subregion and manipulator is formed it is preferred that described
Subregion, including:
Ion implantation technology and etching technics is used to form fiber waveguide on the first area of described first substrate
Subregion and manipulator subregion.
In the second area of described first substrate, detector subregion is formed it is preferred that described, including:
Boss subregion is formed in the second area of described first substrate；
Germanium layer and the first type ion implanting subregion is sequentially formed in described boss subregion；
Described first substrate is formed at least part of region in addition to described boss subregion Second-Type from
Son injects subregion, to form detector subregion.
It is preferred that described method also includes:
At least have that described dielectric layer, fiber waveguide subregion and manipulator subregion are corresponding described first
Metal level is formed on region；
Accordingly, described at least to having described dielectric layer, fiber waveguide subregion and manipulator subregion pair
The described first area answered carries out microwave annealing process, including:
At least corresponding to having described metal level, dielectric layer, fiber waveguide subregion and manipulator subregion
Described first area carries out microwave annealing process.
It is preferred that described method also includes:
At least form metal having on described dielectric layer and second area corresponding to described detector subregion
Layer；
Accordingly, described at least to having described dielectric layer and the secondth district corresponding to described detector subregion
Territory carries out microwave annealing process, including:
The secondth at least corresponding to having described metal level, described dielectric layer and described detector subregion district
Territory carries out microwave annealing process.
It is preferred that described method also includes:
Have on the described first area that described dielectric layer, fiber waveguide subregion are corresponding with manipulator subregion,
And there is formation metal level on the second area that described dielectric layer is corresponding with described detector subregion；
Accordingly, at least corresponding to having described dielectric layer, fiber waveguide subregion and manipulator subregion
Described first area, or at least to have described dielectric layer and described detector subregion corresponding second
Region carries out microwave annealing process, including:
At least to having described metal level, described dielectric layer, fiber waveguide subregion and manipulator subregion pair
The described first area answered, or at least to having described metal level, described dielectric layer and described detector
The second area that subregion is corresponding carries out microwave annealing process.
It is preferred that described metal level use metal material be one or more in following material: aluminum, nickel,
Cobalt, copper and molybdenum.
It is preferred that the thickness of described metal level is 1-100nm.
It is preferred that described method also includes:
Described metal level is corroded, to remove described metal level.
The preparation method of the silicon based opto-electronics subsystem described in the embodiment of the present invention, uses microwave in preparation process
Annealing technology substitutes high annealing of the prior art or laser annealing techniques, owing to microwave annealing is to defective bit
Put and there is selectivity add thermal property, therefore, compared with existing high annealing or laser annealing techniques, this
Bright embodiment use in preparation process microwave annealing technology be capable of the detector to ion implanting and/or
The local of manipulator carries out high-temperature heating, and make other regional temperatures keep relatively low purpose, it is to avoid ion
The problem of diffusion, improves global reliability and the stability of silicon based opto-electronics subsystem.
Accompanying drawing explanation
Fig. 1 be the preparation method of embodiment of the present invention silicon based opto-electronics subsystem realize schematic flow sheet；
Fig. 2 (a) to Fig. 2 (c) is that the structure in the preparation process that embodiment of the present invention first area is corresponding is shown
It is intended to；
Fig. 3 (a) shows to the structure in the preparation process that Fig. 3 (c) is that embodiment of the present invention second area is corresponding
It is intended to.
Detailed description of the invention
The basic thought of the embodiment of the present invention is:
In order to more fully hereinafter understand feature and the technology contents of the present invention, below in conjunction with the accompanying drawings to this
Bright realization is described in detail, appended accompanying drawing purposes of discussion only for reference, is not used for limiting the present invention.
Embodiment
Fig. 1 be the preparation method of embodiment of the present invention silicon based opto-electronics subsystem realize schematic flow sheet；Described
Silicon based opto-electronics subsystem includes the first substrate；As it is shown in figure 1, described method includes:
Step 101: form fiber waveguide subregion and manipulator on the first area of described first substrate
Region；
In the present embodiment, described silicon based opto-electronics subsystem includes: fiber waveguide, manipulator and detector etc.；This
It is right that the fiber waveguide subregion of embodiment the following stated is the fiber waveguide institute formed in described silicon based opto-electronics subsystem
The region answered；In like manner, described manipulator subregion is the manipulator formed in described silicon based opto-electronics subsystem
Involved region；Described detector subregion is the detector formed in described silicon based opto-electronics subsystem
Involved region.
In the present embodiment, described formation fiber waveguide subregion and tune in the first area of described first substrate
Device subregion processed, including:
Ion implantation technology and etching technics is used to form fiber waveguide on the first area of described first substrate
Subregion and manipulator subregion.
Step 102: form detector subregion on the second area of described first substrate；
In the present embodiment, described formation detector subregion in the second area of described first substrate, including:
Boss subregion is formed in the second area of described first substrate；
Germanium layer and the first type ion implanting subregion is sequentially formed in described boss subregion；
Described first substrate is formed at least part of region in addition to described boss subregion Second-Type from
Son injects subregion, to form detector subregion.
Step 103: there is described fiber waveguide subregion, described manipulator subregion and described detector
Dielectric layer is formed in first substrate of subregion；
Step 104: at least corresponding to having described dielectric layer, fiber waveguide subregion and manipulator subregion
Described first area, or at least to have described dielectric layer and described detector subregion corresponding
Two regions carry out microwave annealing process.
In such scheme, described at least to having described dielectric layer, fiber waveguide subregion and the sub-district of manipulator
The described first area that territory is corresponding, or at least to having described dielectric layer and described detector subregion pair
The second area answered carries out microwave annealing process, including:
To the described first area that there is described dielectric layer, fiber waveguide subregion is corresponding with manipulator subregion,
And all carry out microwave move back having the described dielectric layer described second area corresponding with described detector subregion
Fire processes.
In the present embodiment, can select having described dielectric layer, fiber waveguide subregion and the sub-district of manipulator
Described first area corresponding to territory carries out microwave annealing process, it is also possible to select to have described dielectric layer and
The second area that described detector subregion is corresponding carries out microwave annealing process, it is also possible to select having described
Described first area that dielectric layer, fiber waveguide subregion are corresponding with manipulator subregion and described to having
The second area that dielectric layer is corresponding with described detector subregion all carries out microwave annealing process.
In such scheme, described method also includes:
At least have that described dielectric layer, fiber waveguide subregion and manipulator subregion are corresponding described first
Metal level is formed on region；
Accordingly, described at least to having described dielectric layer, fiber waveguide subregion and manipulator subregion pair
The described first area answered carries out microwave annealing process, including:
At least corresponding to having described metal level, dielectric layer, fiber waveguide subregion and manipulator subregion
Described first area carries out microwave annealing process.
In such scheme, described method also includes:
At least form metal having on described dielectric layer and second area corresponding to described detector subregion
Layer；
Accordingly, described at least to having described dielectric layer and the secondth district corresponding to described detector subregion
Territory carries out microwave annealing process, including:
The secondth at least corresponding to having described metal level, described dielectric layer and described detector subregion district
Territory carries out microwave annealing process.
In such scheme, described method also includes:
Have on the described first area that described dielectric layer, fiber waveguide subregion are corresponding with manipulator subregion,
And there is formation metal level on the second area that described dielectric layer is corresponding with described detector subregion；
Accordingly, at least corresponding to having described dielectric layer, fiber waveguide subregion and manipulator subregion
Described first area, or at least to have described dielectric layer and described detector subregion corresponding second
Region carries out microwave annealing process, including:
At least to having described metal level, described dielectric layer, fiber waveguide subregion and manipulator subregion pair
The described first area answered, or at least to having described metal level, described dielectric layer and described detector
The second area that subregion is corresponding carries out microwave annealing process.
In the present embodiment, can select that there is described dielectric layer, fiber waveguide subregion and manipulator subregion
Metal level is formed on corresponding described first area；Can also select that there is described dielectric layer and described detection
Metal level is formed on the second area that device subregion is corresponding；Can also select that there is described dielectric layer, light wave
On the described first area that guide region is corresponding with manipulator subregion, and there is described dielectric layer and institute
The second area stating detector subregion corresponding is respectively formed on metal level.
In such scheme, the metal material that described metal level uses is one or more in following material: aluminum,
Nickel, cobalt, copper and molybdenum.
In such scheme, the thickness of described metal level is 1-100nm.
In such scheme, described method also includes:
Described metal level is corroded, to remove described metal level.
In the present embodiment, when to have described dielectric layer, fiber waveguide subregion corresponding with manipulator subregion
Metal level is formed, and after microwave annealing process terminates on described first area, or, when being given an account of having
Form metal level on the second area that matter layer is corresponding with described detector subregion, and microwave annealing process terminates
After, or, when have that described dielectric layer, fiber waveguide subregion are corresponding with manipulator subregion described
On one region, and formed having on the second area that described dielectric layer is corresponding with described detector subregion
Metal level, and after microwave annealing process terminates, be required under the conditions of three kinds described metal level is corroded,
So, to remove described metal level.
Below in conjunction with concrete accompanying drawing, the embodiment of the present invention is described in detail；
Fig. 2 (a) to Fig. 2 (c) is that the structure in the preparation process that embodiment of the present invention first area is corresponding is shown
It is intended to；Fig. 3 (a) is to the structure in the preparation process that Fig. 3 (c) is that embodiment of the present invention second area is corresponding
Schematic diagram；
As shown in Fig. 2 (a) to Fig. 2 (c), the first area 21 of described first substrate include ground floor 211,
The second layer 212 and third layer 213；Wherein, described ground floor 211 and third layer 213 are the first type silicon
Region；The described second layer 212 is dielectric layer；Photoetching and etching technics is utilized to be formed in described first area
Boss subregion 214, i.e. forms boss subregion 214, such as Fig. 2 (b) institute in described third layer 213
Showing, dotted line is the region, position of PN junction；The first sub-partial areas 2311 in described third layer 213
In carry out ion implanting process, make described first sub-partial areas 2311 become Second-Type silicon area；Now,
Described second sub-partial areas 2312 is constant, is still the first type silicon area；So, light wave guide district is formed
Territory, in Fig. 2 (b) shown in dotted line；The 4th layer 216 it is sequentially depositing on the basis of structure shown in Fig. 2 (b)
With metal level 217, described 4th layer 216 is also dielectric layer；So, fiber waveguide and manipulator are formed.
The second area of described first substrate includes ground floor 211, the second layer 212 and third layer 213 equally,
Identical with Fig. 2 (a) structure, wherein, described ground floor 211 and third layer 213 are the first type silicon area；
The described second layer 212 is dielectric layer；As shown in Fig. 3 (a), on the second area of described first substrate,
Form boss subregion 214 by photoetching and lithographic technique, in described third layer 213, i.e. form boss
Region 214；Further, described boss subregion 214 forms the first type germanium (Ge) layer 218,
And on the first type germanium layer 218 shown in Fig. 3 (b), form the first type ion implanting subregion 219；And
Second-Type ion implanted regions 210 is formed at least part of region in addition to described boss subregion 214,
And then form detector subregion；Further, in there is the structure shown in Fig. 3 (b), sequentially form
Four layer 216 and metal level 217, so, form detector.
In the present embodiment, described medium can be specially the mixed of one or both in silicon dioxide, silicon nitride
Close.
Here it is worth noting that the described first area metal level corresponding with described second area is optional
Layer, say, that can select during forming fiber waveguide and manipulator on described first area
In Fig. 2 (c) on the 4th layer 216 formed metal level 217, it is also possible to select on described 4th layer 216 not
Form metal level 217；In like manner, can select at Fig. 3 during described second area being formed manipulator
C () forms metal level 217, it is also possible to select to be formed without on described 4th layer 216 on the 4th layer 216
Metal level 217, can be arranged in actual applications according to the actual requirements and arbitrarily.Further, when in institute
State after forming metal level on the 4th shown in Fig. 2 (c) and/or Fig. 3 (c) layer 216, in subsequent technique
Can more effectively improve the efficiency of heating surface.
In the present embodiment, when forming fiber waveguide and manipulator on the first region and at described second area
After upper formation detector, need the structure described in Fig. 2 (c) and Fig. 3 (c) is carried out microwave annealing process,
And after described microwave annealing process terminates, the metal level 217 formed is corroded, to remove affiliated gold
Belong to layer.
The preparation method of the silicon based opto-electronics subsystem described in the embodiment of the present invention, uses microwave in preparation process
Annealing technology substitutes high annealing of the prior art or laser annealing techniques, owing to microwave annealing is to defective bit
Put and there is selectivity add thermal property, therefore, compared with existing high annealing or laser annealing techniques, this
Bright embodiment use in preparation process microwave annealing technology be capable of the detector to ion implanting and/or
The local of manipulator carries out high-temperature heating, and make other regional temperatures keep relatively low purpose, it is to avoid ion
The problem of diffusion.
Specifically, the boss subregion corresponding due to manipulator subregion is formed by etching technics, and
The defect formed after surface defect that etching technics causes and ion implanting is higher to the absorption of microwave, so,
Compared with other regions, the efficiency of heating surface of manipulator subregion is high；In like manner, due to the defect of germanium inside self
Higher to the absorption of microwave with the defect formed after ion implanting, so, compared with other regions, detector
The efficiency of heating surface of subregion is higher；
It addition, when have described dielectric layer, fiber waveguide subregion and manipulator subregion corresponding described in
Form metal level on first area, or there is described dielectric layer and described detector subregion is corresponding
Form metal level on second area, or there is described dielectric layer, fiber waveguide subregion and the sub-district of manipulator
On the described first area that territory is corresponding and corresponding with described detector subregion having described dielectric layer
After forming metal level on second area, when carrying out microwave annealing process, owing to described metal level can be effectively
Absorb microwave, it is possible to make manipulator subregion, detector subregion or tune that metal level is covered
The temperature of device subregion processed and detector subregion significantly increases, and then can be relatively low at other regional temperatures
In the case of, improve manipulator subregion, detector subregion or manipulator subregion and the sub-district of detector
The temperature in territory, and then avoid ion diffusion problem.
The above, the only detailed description of the invention of the present invention, but protection scope of the present invention is not limited to
This, any those familiar with the art, in the technical scope that the invention discloses, can readily occur in
Change or replacement, all should contain within protection scope of the present invention.Therefore, protection scope of the present invention should
It is as the criterion with described scope of the claims.
Claims (10)
1. the preparation method of a silicon based opto-electronics subsystem, it is characterised in that described silicon based opto-electronics subsystem bag
Include the first substrate；Described method includes:
The first area of described first substrate is formed fiber waveguide subregion and manipulator subregion；
The second area of described first substrate is formed detector subregion；
There is the of described fiber waveguide subregion, described manipulator subregion and described detector subregion
Dielectric layer is formed in one substrate；
At least to having described dielectric layer, fiber waveguide subregion and manipulator subregion corresponding described first
Region, or at least to there is described dielectric layer and second area corresponding to described detector subregion is carried out
Microwave annealing processes.
Method the most according to claim 1, it is characterised in that described at least to have described dielectric layer,
Fiber waveguide subregion and described first area corresponding to manipulator subregion, or at least given an account of having
Matter layer and second area corresponding to described detector subregion carry out microwave annealing process, including:
To the described first area that there is described dielectric layer, fiber waveguide subregion is corresponding with manipulator subregion,
And all carry out at microwave annealing having the described dielectric layer second area corresponding with described detector subregion
Reason.
Method the most according to claim 1, it is characterised in that described in the first of described first substrate
Region is formed fiber waveguide subregion and manipulator subregion, including:
Ion implantation technology and etching technics is used to form fiber waveguide on the first area of described first substrate
Subregion and manipulator subregion.
Method the most according to claim 1, it is characterised in that described in the second of described first substrate
Region is formed detector subregion, including:
Boss subregion is formed in the second area of described first substrate；
Germanium layer and the first type ion implanting subregion is sequentially formed in described boss subregion；
Described first substrate is formed at least part of region in addition to described boss subregion Second-Type from
Son injects subregion, to form detector subregion.
Method the most according to claim 1, it is characterised in that described method also includes:
At least have that described dielectric layer, fiber waveguide subregion and manipulator subregion are corresponding described first
Metal level is formed on region；
Accordingly, described at least to having described dielectric layer, fiber waveguide subregion and manipulator subregion pair
The described first area answered carries out microwave annealing process, including:
At least corresponding to having described metal level, dielectric layer, fiber waveguide subregion and manipulator subregion
Described first area carries out microwave annealing process.
Method the most according to claim 1, it is characterised in that described method also includes:
At least form metal having on described dielectric layer and second area corresponding to described detector subregion
Layer；
Accordingly, described at least to having described dielectric layer and the secondth district corresponding to described detector subregion
Territory carries out microwave annealing process, including:
The secondth at least corresponding to having described metal level, described dielectric layer and described detector subregion district
Territory carries out microwave annealing process.
Method the most according to claim 1, it is characterised in that described method also includes:
Have on the described first area that described dielectric layer, fiber waveguide subregion are corresponding with manipulator subregion,
And there is formation metal level on the second area that described dielectric layer is corresponding with described detector subregion；
Accordingly, at least corresponding to having described dielectric layer, fiber waveguide subregion and manipulator subregion
Described first area, or at least to have described dielectric layer and described detector subregion corresponding second
Region carries out microwave annealing process, including:
At least to having described metal level, described dielectric layer, fiber waveguide subregion and manipulator subregion pair
The described first area answered, or at least to having described metal level, described dielectric layer and described detector
The second area that subregion is corresponding carries out microwave annealing process.
8. according to the method described in any one of claim 5 to 7, it is characterised in that described metal level uses
Metal material be one or more in following material: aluminum, nickel, cobalt, copper and molybdenum.
Method the most according to claim 8, it is characterised in that the thickness of described metal level is 1-100nm.
Method the most according to claim 7, it is characterised in that described method also includes:
Described metal level is corroded, to remove described metal level.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510170914.7A CN106159036A (en) | 2015-04-13 | 2015-04-13 | A kind of preparation method of silicon based opto-electronics subsystem |
| PCT/CN2016/076812 WO2016165526A1 (en) | 2015-04-13 | 2016-03-18 | Manufacturing method for silicon-based optoelectronic system |
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| CN201510170914.7A CN106159036A (en) | 2015-04-13 | 2015-04-13 | A kind of preparation method of silicon based opto-electronics subsystem |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1502051A (en) * | 2001-02-02 | 2004-06-02 | 英特尔公司 | Method for providing optical quality silicon surface |
| US20070059944A1 (en) * | 2004-03-03 | 2007-03-15 | Tokyo Electron Limited | Plasma processing method and computer storage medium |
| JP2013531371A (en) * | 2010-06-03 | 2013-08-01 | サニーバ，インコーポレイテッド | Selective emitter solar cells formed by a hybrid process of diffusion and ion implantation. |
| WO2014035679A1 (en) * | 2012-08-31 | 2014-03-06 | Micron Technology, Inc. | Method of forming photonics structures |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2012148621A2 (en) * | 2011-04-25 | 2012-11-01 | Applied Materials, Inc. | Apparatus and methods for microwave processing of semiconductor substrates |
| CN103474386B (en) * | 2013-09-26 | 2016-02-03 | 中国科学院上海微系统与信息技术研究所 | A kind of C of utilization doping SiGe modulating layer prepares the method for SGOI or GOI |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1502051A (en) * | 2001-02-02 | 2004-06-02 | 英特尔公司 | Method for providing optical quality silicon surface |
| US20070059944A1 (en) * | 2004-03-03 | 2007-03-15 | Tokyo Electron Limited | Plasma processing method and computer storage medium |
| JP2013531371A (en) * | 2010-06-03 | 2013-08-01 | サニーバ，インコーポレイテッド | Selective emitter solar cells formed by a hybrid process of diffusion and ion implantation. |
| WO2014035679A1 (en) * | 2012-08-31 | 2014-03-06 | Micron Technology, Inc. | Method of forming photonics structures |
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