CN106158671A - Wafer package method - Google Patents
Wafer package method Download PDFInfo
- Publication number
- CN106158671A CN106158671A CN201510135529.9A CN201510135529A CN106158671A CN 106158671 A CN106158671 A CN 106158671A CN 201510135529 A CN201510135529 A CN 201510135529A CN 106158671 A CN106158671 A CN 106158671A
- Authority
- CN
- China
- Prior art keywords
- stannum
- coated
- wafer
- molten
- conductive adhesive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/8134—Bonding interfaces of the bump connector
- H01L2224/81355—Bonding interfaces of the bump connector having an external coating, e.g. protective bond-through coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Wire Bonding (AREA)
Abstract
The invention discloses a kind of wafer package method, comprise the following steps: utilize dicing saws to be cut by wafer, utilize an equipment to draw wafer, the stannum salient point of wafer is stained with scaling powder；Then utilize glue material to be coated with printing apparatus utilizes steel plate printing and Rubber end transfer or air valve spray printing to be coated on substrate front side by non-conductive adhesive；After recycling stannum is molten, stannum salient point is directly welded in substrate copper packing with 290 to 300 degree Celsius by solder technology；Again by material baking after upper slice, plasma-based is cleaned and resin-molded encapsulation；Can complete to weld packaging body after stannum melts.Weld after the stannum of the present invention is molten after packaging body uses stannum molten and weld one processing procedure；Weld packaging body after stannum is molten and first substrate surface must be coated with one layer of non-conductive adhesive and because being coated with the built-in function that non-conductive adhesive is glue material painting print machine, therefore do not affect man-hour, compare with commonly using wafer encapsulation procedure, because reflow baking can be decreased, flux cleaning two road processing procedure, minimizing equipment, manpower and flux cleaning cost.
Description
Technical field
The present invention relates to a kind of wafer package method.
Background technology
As shown in Figures 1 and 2, existing wafer 1 packaged type is to use reflow (FC) packaging body to use soldering flux applying 2 on substrate 4, is provided with stannum ball 5 under substrate 4, and encapsulation process reflow is toasted, flux cleaning three road processing procedure, but shortcoming is cost height, time-consuming.
Reflow (FC) packaging body is only applicable to broad gap (Wide Pitch) bumps wafer package, (soldering flux applying stannum salient point is after reflow oven is toasted to be not suitable for areolar (Fine Pitch) bumps wafer package, stannum can be with scaling powder thermal diffusion, areolar ((Fine
Pitch), Cu trace to Cu trace < 60um copper cash and copper cash spacing are less than 60um).
Summary of the invention
Present invention aims to the defect of above-mentioned prior art, it is provided that one can reduce encapsulation flow process, reduce packaging cost and increase the wafer package method of envelope wafer package relevance factor.
In order to reach above-mentioned purpose, the solution of the present invention is:
A kind of wafer package method, comprises the following steps:
Step 1: utilize dicing saws to be cut by wafer, recycles an equipment and draws wafer, and the stannum salient point of wafer is stained with scaling powder；
Step 2: utilize glue material to be coated with print machine and non-conductive adhesive utilizes steel plate printing and Rubber end transfer or air valve spray printing are coated on substrate front side；
Step 3: after utilizing stannum molten, stannum salient point is directly welded in substrate copper packing with 290 to 300 degree Celsius by solder technology；
Step 4: by material baking after upper slice, plasma-based is cleaned and resin-molded encapsulation, i.e. complete stannum molten after weld packaging body.
Further, glue material described in step 2 is coated with print machine is, with steel plate printing and glue head transfer modes, non-conductive adhesive is coated on substrate front side.
Further, glue material described in step 2 is coated with print machine is, by air valve spray printing mode, non-conductive adhesive is coated on substrate front side.
Further, after stannum described in step 3 is molten, the heating-up temperature of welding is 295 degree.
Wafer package method of the present invention is coated with one layer of non-conductive adhesive (NCP) in electric substrate surface, the organic guarantor using elimination substrate surface welds film, and hinder scaling powder thermal diffusion (reducing retinal contaminated area in scaling powder), promote resin and copper packing binding ability.
Compared with prior art, the invention has the beneficial effects as follows that non-conductive adhesive (NCP) can eliminate substrate surface OSP (Organic Surface Protectant) organic guarantor and weld film, and stannum cold welding situation can be improved.And scaling powder thermal diffusion (reducing retinal contaminated area in scaling powder) can be hindered, promote resin and copper packing binding ability.
The present invention can be effectively reduced reflow baking, flux cleaning two road processing procedure, reduces equipment, manpower and flux cleaning cost.
The stannum of present invention application welds (FC) packaging body after melting and is applicable to broad gap (Wide Pitch) bumps wafer package and areolar (Fine Pitch) bumps wafer package (non-conductive adhesive can hinder scaling powder and stannum thermal diffusion).
Accompanying drawing explanation
Fig. 1 is the structural representation commonly using reflow (FC) base plate for packaging packaging body；
Fig. 2 is for commonly using reflow (FC) base plate for packaging (FC) packaging body flow chart of steps；
Fig. 3 is the structural representation that the embodiment of the present invention contains non-conductive adhesive (NCP)；
Fig. 4 is to weld (FC) packaging body flow chart of steps and STRUCTURE DECOMPOSITION figure after stannum of the present invention melts.
Detailed description of the invention
In order to technical scheme is explained further, below by specific embodiment, the present invention will be described in detail.
Such as Fig. 3, the structure that the present invention contains non-conductive adhesive (NCP) is to impose on copper post with scaling powder 2 between integrated circuit 1 and substrate 4, and both are weldingly connected and above substrate 4, scribble non-conductive adhesive (NCP) 3, it is provided with stannum ball 5 below substrate, to constitute a packaging body integrated circuit structure.
As shown in Figure 4, one wafer package method of the present invention, comprise the following steps:
Utilizing dicing saws to be cut by wafer, recycle an equipment and draw wafer, the stannum salient point of wafer is stained with scaling powder.
Then utilize glue material to be coated with printing apparatus utilizes steel plate printing and Rubber end transfer or air valve spray printing to be coated on substrate front side by non-conductive adhesive (NCP).
Weld (MTD) technology after recycling stannum is molten and directly stannum salient point is welded in substrate copper packing with 295 degree Celsius (positive and negative 5 degree).
Again by material baking after upper slice, plasma-based is cleaned and resin-molded encapsulation.
Can complete to weld (FC) packaging body after stannum melts.
Compared with prior art, the enhancement of the present invention provides the benefit that non-conductive adhesive (NCP) can eliminate substrate surface OSP (Organic Surface Protectant) organic guarantor and weld film.
And stannum cold welding situation can be improved.
And scaling powder thermal diffusion (reducing retinal contaminated area in scaling powder) can be hindered, promote resin and copper packing binding ability.
The present invention can be effectively reduced reflow baking, flux cleaning two road processing procedure, reduces equipment, manpower and flux cleaning cost.
The stannum of present invention application welds (FC) packaging body after melting and is applicable to broad gap (Wide Pitch) bumps wafer package and areolar (Fine Pitch) bumps wafer package (non-conductive adhesive can hinder scaling powder and stannum thermal diffusion).
Above-described embodiment and the product form of the graphic and non-limiting present invention and style, suitably change that it is done by any person of an ordinary skill in the technical field or modify, all should be regarded as the patent category without departing from the present invention.
Claims (4)
1. a wafer package method, comprises the following steps:
Step 1: cut by wafer with dicing saws, utilizes an equipment to draw wafer, utilizes oven device to make wafer produce salient point and be stained with scaling powder；
Step 2: utilize glue material to be coated with print machine and non-conductive adhesive is coated on substrate front side；
Step 3: weld after utilizing stannum molten and temperature is heated to 290-300 degree Celsius, then directly stannum salient point is welded in substrate copper packing；
Step 4: material baking, plasma-based after upper slice are cleaned and resin-molded encapsulation, i.e. complete stannum molten after weld packaging body.
2. according to a kind of wafer package method described in claim 1, it is characterised in that: it is, with steel plate printing and glue head transfer modes, non-conductive adhesive is coated on substrate front side that glue material described in step 2 is coated with print machine.
3. according to a kind of wafer package method described in claim 1, it is characterised in that: glue material described in step 2 is coated with print machine air valve spray printing mode and non-conductive adhesive is coated on substrate front side.
4. according to a kind of wafer package method described in claim 1, it is characterised in that: after stannum described in step 3 is molten, the heating-up temperature of welding is 295 degree.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510135529.9A CN106158671A (en) | 2015-03-26 | 2015-03-26 | Wafer package method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510135529.9A CN106158671A (en) | 2015-03-26 | 2015-03-26 | Wafer package method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106158671A true CN106158671A (en) | 2016-11-23 |
Family
ID=57339429
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510135529.9A Pending CN106158671A (en) | 2015-03-26 | 2015-03-26 | Wafer package method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106158671A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114472068A (en) * | 2021-12-20 | 2022-05-13 | 大连龙飞科技有限公司 | Automatic tin soldering machine separation blade feeding and gluing device for galvanized iron sheet box and working method of automatic tin soldering machine separation blade feeding and gluing device |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1498520A (en) * | 2001-03-19 | 2004-05-19 | 住友电木株式会社 | Method of manufacturing electronic part and electronic part obtained by the method |
| CN102668051A (en) * | 2009-10-19 | 2012-09-12 | 住友电木株式会社 | Process for production of electronic device, electronic device, and device for production of electronic device |
| US20140134796A1 (en) * | 2012-11-15 | 2014-05-15 | Michael G. Kelly | Method And System For A Semiconductor Device Package With A Die To Interposer Wafer First Bond |
| CN104409370A (en) * | 2014-11-18 | 2015-03-11 | 南通富士通微电子股份有限公司 | Flipping mounting method of stud bump chip and method for applying mounting pressure |
-
2015
- 2015-03-26 CN CN201510135529.9A patent/CN106158671A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1498520A (en) * | 2001-03-19 | 2004-05-19 | 住友电木株式会社 | Method of manufacturing electronic part and electronic part obtained by the method |
| CN102668051A (en) * | 2009-10-19 | 2012-09-12 | 住友电木株式会社 | Process for production of electronic device, electronic device, and device for production of electronic device |
| US20140134796A1 (en) * | 2012-11-15 | 2014-05-15 | Michael G. Kelly | Method And System For A Semiconductor Device Package With A Die To Interposer Wafer First Bond |
| CN104409370A (en) * | 2014-11-18 | 2015-03-11 | 南通富士通微电子股份有限公司 | Flipping mounting method of stud bump chip and method for applying mounting pressure |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114472068A (en) * | 2021-12-20 | 2022-05-13 | 大连龙飞科技有限公司 | Automatic tin soldering machine separation blade feeding and gluing device for galvanized iron sheet box and working method of automatic tin soldering machine separation blade feeding and gluing device |
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| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20161123 |
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| WD01 | Invention patent application deemed withdrawn after publication |